KR20130073890A - 나노임프린트 리소그래피를 위한 기판/주형의 분리 제어 - Google Patents

나노임프린트 리소그래피를 위한 기판/주형의 분리 제어 Download PDF

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Publication number
KR20130073890A
KR20130073890A KR1020127029597A KR20127029597A KR20130073890A KR 20130073890 A KR20130073890 A KR 20130073890A KR 1020127029597 A KR1020127029597 A KR 1020127029597A KR 20127029597 A KR20127029597 A KR 20127029597A KR 20130073890 A KR20130073890 A KR 20130073890A
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KR
South Korea
Prior art keywords
substrate
mold
back pressure
transverse
thickness
Prior art date
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Ceased
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KR1020127029597A
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English (en)
Korean (ko)
Inventor
세혁 임
마하데반 가나파티서브라마니안
에드워드 비. 플레쳐
니야즈 쿠스낫디노브
제라드 엠. 슈미드
마리오 조한네스 메이슬
앤슈맨 쉐랄라
프랭크 와이. 쑤
병진 최
시들가타 브이. 스리니바산
Original Assignee
몰레큘러 임프린츠 인코퍼레이티드
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Publication of KR20130073890A publication Critical patent/KR20130073890A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/17—Component parts, details or accessories; Auxiliary operations
    • B29C45/76—Measuring, controlling or regulating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
    • B29L2007/00—Flat articles, e.g. films or sheets
    • B29L2007/001—Flat articles, e.g. films or sheets having irregular or rough surfaces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y10S977/875—Scanning probe structure with tip detail
    • Y10S977/877—Chemically functionalized

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
KR1020127029597A 2010-04-27 2011-04-27 나노임프린트 리소그래피를 위한 기판/주형의 분리 제어 Ceased KR20130073890A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US32835310P 2010-04-27 2010-04-27
US61/328,353 2010-04-27
PCT/US2011/034159 WO2011139782A1 (en) 2010-04-27 2011-04-27 Separation control substrate/template for nanoimprint lithography

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020187004050A Division KR101960362B1 (ko) 2010-04-27 2011-04-27 나노임프린트 리소그래피를 위한 기판/주형의 분리 제어

Publications (1)

Publication Number Publication Date
KR20130073890A true KR20130073890A (ko) 2013-07-03

Family

ID=44461800

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020187004050A Active KR101960362B1 (ko) 2010-04-27 2011-04-27 나노임프린트 리소그래피를 위한 기판/주형의 분리 제어
KR1020127029597A Ceased KR20130073890A (ko) 2010-04-27 2011-04-27 나노임프린트 리소그래피를 위한 기판/주형의 분리 제어

Family Applications Before (1)

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KR1020187004050A Active KR101960362B1 (ko) 2010-04-27 2011-04-27 나노임프린트 리소그래피를 위한 기판/주형의 분리 제어

Country Status (6)

Country Link
US (3) US8968620B2 (enExample)
EP (1) EP2564271B1 (enExample)
JP (2) JP5833636B2 (enExample)
KR (2) KR101960362B1 (enExample)
TW (1) TWI576229B (enExample)
WO (1) WO2011139782A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160045818A (ko) * 2013-08-19 2016-04-27 보드 오브 레젼츠, 더 유니버시티 오브 텍사스 시스템 나노미터 규격 정확도를 갖는 사용자 정의 프로파일의 박막들의 프로그램 작동 가능한 적층 방법
KR20190059275A (ko) * 2016-08-26 2019-05-30 몰레큘러 임프린츠 인코퍼레이티드 모놀리식 고굴절률 광자 디바이스들

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JP5833636B2 (ja) 2010-04-27 2015-12-16 モレキュラー・インプリンツ・インコーポレーテッド ナノインプリント・リソグラフィのテンプレート製作方法およびそのシステム
JP5875250B2 (ja) * 2011-04-28 2016-03-02 キヤノン株式会社 インプリント装置、インプリント方法及びデバイス製造方法
US9616614B2 (en) 2012-02-22 2017-04-11 Canon Nanotechnologies, Inc. Large area imprint lithography
JP6021365B2 (ja) * 2012-03-12 2016-11-09 キヤノン株式会社 インプリント装置、それを用いた物品の製造方法
JP6315963B2 (ja) 2013-12-09 2018-04-25 キヤノン株式会社 インプリント装置、及び物品の製造方法
US10627715B2 (en) * 2016-10-31 2020-04-21 Canon Kabushiki Kaisha Method for separating a nanoimprint template from a substrate
CA3081262A1 (en) 2017-11-02 2019-05-09 Magic Leap, Inc. Preparing and dispensing polymer materials and producing polymer articles therefrom
JP7033994B2 (ja) * 2018-04-11 2022-03-11 キヤノン株式会社 成形装置及び物品の製造方法
JP7100485B2 (ja) 2018-04-26 2022-07-13 キヤノン株式会社 インプリント装置およびデバイス製造方法
US11249405B2 (en) 2018-04-30 2022-02-15 Canon Kabushiki Kaisha System and method for improving the performance of a nanoimprint system
US11034057B2 (en) * 2019-08-15 2021-06-15 Canon Kabushiki Kaisha Planarization process, apparatus and method of manufacturing an article
JP2023156163A (ja) * 2022-04-12 2023-10-24 キヤノン株式会社 インプリント装置、インプリント方法及び物品の製造方法
CN119589893B (zh) * 2024-12-06 2025-09-26 安徽芯核防务装备技术股份有限公司 一种复合材料强约束注胶模压装置

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US6482742B1 (en) * 2000-07-18 2002-11-19 Stephen Y. Chou Fluid pressure imprint lithography
US6873087B1 (en) 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
US7432634B2 (en) 2000-10-27 2008-10-07 Board Of Regents, University Of Texas System Remote center compliant flexure device
US7322287B2 (en) * 2000-07-18 2008-01-29 Nanonex Corporation Apparatus for fluid pressure imprint lithography
US6932934B2 (en) 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US7077992B2 (en) 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US7019819B2 (en) 2002-11-13 2006-03-28 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US6936194B2 (en) 2002-09-05 2005-08-30 Molecular Imprints, Inc. Functional patterning material for imprint lithography processes
US8349241B2 (en) 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US20040065252A1 (en) 2002-10-04 2004-04-08 Sreenivasan Sidlgata V. Method of forming a layer on a substrate to facilitate fabrication of metrology standards
EP2261966B1 (en) * 2002-11-13 2012-03-14 Molecular Imprints, Inc. A lithographic system including a chucking system
US7179396B2 (en) 2003-03-25 2007-02-20 Molecular Imprints, Inc. Positive tone bi-layer imprint lithography method
US7396475B2 (en) 2003-04-25 2008-07-08 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
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US7157036B2 (en) 2003-06-17 2007-01-02 Molecular Imprints, Inc Method to reduce adhesion between a conformable region and a pattern of a mold
EP1538482B1 (en) * 2003-12-05 2016-02-17 Obducat AB Device and method for large area lithography
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US7798801B2 (en) 2005-01-31 2010-09-21 Molecular Imprints, Inc. Chucking system for nano-manufacturing
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JP4773729B2 (ja) * 2005-02-28 2011-09-14 キヤノン株式会社 転写装置およびデバイス製造方法
JP2007083626A (ja) * 2005-09-22 2007-04-05 Ricoh Co Ltd 微細構造転写装置
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US7803308B2 (en) 2005-12-01 2010-09-28 Molecular Imprints, Inc. Technique for separating a mold from solidified imprinting material
US7517211B2 (en) * 2005-12-21 2009-04-14 Asml Netherlands B.V. Imprint lithography
US8377361B2 (en) * 2006-11-28 2013-02-19 Wei Zhang Imprint lithography with improved substrate/mold separation
JP2009214485A (ja) * 2008-03-12 2009-09-24 Fujifilm Corp 基板剥離装置及び基板剥離方法
JP5117318B2 (ja) * 2008-08-07 2013-01-16 株式会社日立ハイテクノロジーズ ナノインプリント用スタンパ及び該スタンパを使用する微細構造転写装置
US8075299B2 (en) 2008-10-21 2011-12-13 Molecular Imprints, Inc. Reduction of stress during template separation
US8652393B2 (en) * 2008-10-24 2014-02-18 Molecular Imprints, Inc. Strain and kinetics control during separation phase of imprint process
US8309008B2 (en) 2008-10-30 2012-11-13 Molecular Imprints, Inc. Separation in an imprint lithography process
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JP5833636B2 (ja) 2010-04-27 2015-12-16 モレキュラー・インプリンツ・インコーポレーテッド ナノインプリント・リソグラフィのテンプレート製作方法およびそのシステム

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160045818A (ko) * 2013-08-19 2016-04-27 보드 오브 레젼츠, 더 유니버시티 오브 텍사스 시스템 나노미터 규격 정확도를 갖는 사용자 정의 프로파일의 박막들의 프로그램 작동 가능한 적층 방법
KR20190059275A (ko) * 2016-08-26 2019-05-30 몰레큘러 임프린츠 인코퍼레이티드 모놀리식 고굴절률 광자 디바이스들

Also Published As

Publication number Publication date
JP2013532369A (ja) 2013-08-15
US8968620B2 (en) 2015-03-03
KR101960362B1 (ko) 2019-03-20
KR20180018848A (ko) 2018-02-21
JP5833636B2 (ja) 2015-12-16
US20150165671A1 (en) 2015-06-18
US20190061228A1 (en) 2019-02-28
JP2015195409A (ja) 2015-11-05
TWI576229B (zh) 2017-04-01
TW201144045A (en) 2011-12-16
WO2011139782A1 (en) 2011-11-10
US11020894B2 (en) 2021-06-01
JP6018268B2 (ja) 2016-11-02
US20110260361A1 (en) 2011-10-27
EP2564271A1 (en) 2013-03-06
EP2564271B1 (en) 2015-12-16

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