KR20130072698A - Light emitting device package and lighting system including the same - Google Patents

Abstract

PURPOSE: A light emitting device package and a lighting system including the same are provided to improve light extraction efficiency by using an electrode made of gold. CONSTITUTION: At least one first electrode pattern (130) is arranged on a package body (110). At least one second electrode pattern (140) is arranged on the package body. A light emitting device is electrically connected to the first electrode pattern and the second electrode pattern respectively. One of the first and the second electrode pattern has a maximum and a minimum pattern width. The package body is made of ceramic.

Description

LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM INCLUDING THE SAME}

Embodiments relate to a light emitting device package and an illumination system including the same.

BACKGROUND ART Light emitting devices such as a light emitting diode (LD) or a laser diode using semiconductor materials of Group 3-5 or 2-6 group semiconductors are widely used for various colors such as red, green, blue, and ultraviolet And it is possible to realize white light rays with high efficiency by using fluorescent materials or colors, and it is possible to realize low energy consumption, semi-permanent life time, quick response speed, safety and environment friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps .

Therefore, a transmission module of the optical communication means, a light emitting diode backlight replacing a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device, a white light emitting element capable of replacing a fluorescent lamp or an incandescent lamp Diode lighting, automotive headlights, and traffic lights.

The light emitting device package includes a first electrode pattern and a second electrode pattern disposed on the package body, a light emitting device disposed on the bottom surface of the package body, and is electrically connected to the first electrode pattern and the second electrode pattern.

In the case of a light emitting device package mounted with a light emitting diode emitting UV light, there is a problem in that the reliability of the package is deteriorated because the organic material included in the body is discolored or deteriorated when the ultraviolet light reflects the package body. Therefore, it is necessary to improve the reliability of the light emitting device package while maintaining excellent heat radiation characteristics.

1 is a view showing an arrangement of electrode patterns of a conventional light emitting device package.

Conventional UV light emitting diodes emitting ultraviolet light have a package body composed of a plurality of ceramic layers (110a, 110b, 110c, 110d), and the first electrode patterns (131, 132, 133, 134) on the bottom surface of the package body. Second electrode patterns 141, 142, 143, and 144 are disposed. Since a plurality of light emitting diodes may be disposed in the light emitting device package, a plurality of first electrode patterns 131, 132, 133, and 134 and a plurality of second electrode patterns 141, 142, 143, and 144 may be disposed, and a third may be disposed. Zener diodes may be disposed on the electrode patterns 151 and 152.

However, the conventional light emitting device package has the following problems.

When AgCu is applied at the contact area between silver (Ag), copper (Cu), etc., as a material of the electrode pattern, and the AgCu is not strong, peeling may occur between the package body and the electrode pattern. The material may be oxidized to cause an insulation phenomenon between the electrodes, and the light emitted from the light emitting diode may be partially absorbed from the surface of the electrode pattern, thereby reducing the light efficiency of the light emitting device package.

The embodiment improves the light extraction efficiency of the light emitting device package, prevents short circuit between the electrode patterns, and secures the stability of the electrode pattern structure.

Embodiments include a package body; At least one first electrode pattern and a second electrode pattern disposed on the package body; And a light emitting device electrically connected to the first electrode pattern and the second electrode pattern, wherein at least one of the first electrode pattern and the second electrode pattern has a width of a maximum pattern and a width of a minimum pattern different from each other. Provide the package.

The package body may be made of ceramic, and the package body may be exposed on the surface where the first electrode pattern and the second electrode pattern are located.

The light emitting device package may further include a light transmitting layer on the exposed package body.

The light transmitting layer may include a silicone resin.

The package body may consist of a plurality of layers.

The package body may have a cavity including a bottom surface and sidewalls, and the first electrode pattern and the second electrode pattern may be disposed on the bottom surface of the cavity.

A light transmitting layer is located inside or on the cavity, and the light transmitting layer may include at least one of silicone resin or glass.

The light emitting device may be disposed on a first electrode pattern.

A plurality of first electrode patterns and a plurality of second electrode patterns may be disposed, and light emitting devices may be disposed for each of the first electrode patterns.

Each light emitting device may be wire bonded to the second electrode.

The second electrode pattern may include an extension pattern.

The package body may have a through hole, and the expansion pattern may be electrically connected to the through hole.

Another embodiment includes the above-described light emitting device package; A circuit board electrically connected to the first electrode pattern and the second electrode pattern of the light emitting device package; And an optical member for diffusing light transmitted from the light emitting device package.

The light emitting device package according to the embodiment is composed of gold electrode, the oxidation resistance is strong, so that the durability of the electrode can be reduced, the possibility of short circuit between the electrodes can be reduced, and the total light reflectance in the short wavelength band such as UV is relatively low gold plating The reduced area of the electrode increases the exposure area of the ceramic layer, which has a relatively high total UV light reflectance, thereby improving light extraction efficiency, and the bonding strength between the exposed ceramic substrate and the silicone resin in the molding part is greater, resulting in higher stability of the structure. Is improved.

1 is a view showing the arrangement of the electrode pattern of a conventional light emitting device package,
2 is a view showing an embodiment of a light emitting device package,
3A to 3C are views illustrating an arrangement of electrode patterns of the light emitting device package of FIG.
4 is a detailed view of a portion of FIG. 3A;
5 is a view showing a light emitting device disposed in the light emitting device package of FIG.
6 is a view showing an embodiment of a head lamp including a light emitting device package,
7 is a diagram illustrating an embodiment of an image display device including a light emitting device package.

Embodiments will now be described with reference to the accompanying drawings.

In the description of embodiments according to the present invention, in the case of being described as being formed "on or under" of each element, the upper (upper) or lower (lower) or under are all such that two elements are in direct contact with each other or one or more other elements are indirectly formed between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.

2 is a view showing an embodiment of a light emitting device package.

In the light emitting device package 100 according to the embodiment, the package body 110 includes a plurality of ceramic layers 110a, 110b, 110c and 110d. The package body 110 may be implemented using high temperature cofired ceramics (HTCC) or low temperature cofired ceramics (LTCC) technology.

When the package body 110 is a multilayer ceramic substrate, the thickness of each layer may be the same or may be different. The package body 110 may be formed of an insulating material of nitride or oxide, and may include, for example, SiO ₂ , Si _x O _y , Si ₃ N _y , SiO _x N _y , Al ₂ O _3, or AlN. .

Widths of the plurality of ceramic layers 110a, 110b, 110c, and 110d may be different from each other, and portions 110a and 110b may form the bottom surface of the light emitting device package 100 or the cavity, and other portions 110c and 110d. ) May form the sidewall of the cavity.

The light emitting device 200 is disposed on the bottom surface of the cavity including the plurality of ceramic layers 110a, 110b, 110c, and 110d described above. In the present embodiment, four light emitting devices 200 may be disposed, but at least one light emitting device 200 may be disposed.

The light emitting device includes a plurality of compound semiconductor layers, for example, a light emitting diode (LED) using a semiconductor layer of a group III-V element, and the light emitting device includes a colored light emitting device emitting light such as blue, green, Or may be a UV light emitting element that emits UV light.

Since the package body 110 is formed of a ceramic substrate such as inorganic LTCC and HTCC, a deep UV LED having a wavelength of about 280 nm or a near UV LED having a wavelength of about 365 to 395 nm is used. Even when the light emitting device 200 is used, the body 110 may be discolored or deteriorated by ultraviolet light emitted from the light emitting device 200, thereby maintaining the reliability of the light emitting module.

5 is a view showing a light emitting device disposed in the light emitting device package of FIG.

The light emitting device 200 may include a conductive support substrate 265, a reflective layer 255 and an ohmic layer 250 disposed on the support substrate 265, and a light emitting structure 230 on the ohmic layer 250. Can be.

The first conductivity-type semiconductor layer 232 may be formed of a semiconductor compound, and for example, may be formed of a compound semiconductor such as Group 3-5 or Group 2-6. In addition, the first conductivity type dopant may be doped. When the first conductivity type semiconductor layer 232 is an n type semiconductor layer, the first conductivity type dopant may include Si, Ge, Sn, Se, Te as an n type dopant, but is not limited thereto. Alternatively, when the first conductive semiconductor layer 232 is a p-type semiconductor layer, the second conductive dopant may be a p-type dopant, and may include Mg, Zn, Ca, Sr, and Ba, but is not limited thereto. .

The first conductive semiconductor layer 232 may be formed of only the first conductive semiconductor layer, or may further include an undoped semiconductor layer under the first conductive semiconductor layer, but is not limited thereto.

The non-conductive semiconductor layer is formed to improve the crystallinity of the first conductive type semiconductor layer, and the non-conductive semiconductor layer has a lower electrical conductivity than the first conductive type semiconductor layer without doping the n-type dopant. And may be the same as the first conductive type semiconductor layer.

In the active layer 234, electrons injected through the first conductive semiconductor layer 232 and holes injected through the second conductive semiconductor layer 236 formed thereafter meet each other to form an energy band unique to the active layer (light emitting layer) material. It is a layer that emits light with energy determined by it.

The active layer 234 may be formed of at least one of a single well structure, a multi well structure, a quantum-wire structure, and a quantum dot structure. For example, the active layer 224 may be injected with trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and trimethyl indium gas (TMIn) to form a multi-quantum well structure. It is not limited to this.

The well layer / barrier layer of the active layer 234 may be formed of any one or more pairs of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, GaP (InGaP) But are not limited thereto. The well layer may be formed of a material having a lower band gap than the band gap of the barrier layer.

A conductive clad layer (not shown) may be formed on or under the active layer 234. The conductive clad layer may be formed of a semiconductor having a band gap wider than the band gap of the barrier layer of the active layer. For example, the conductive clad layer may comprise GaN, AlGaN, InAlGaN or a superlattice structure. In addition, the conductive clad layer may be doped with n-type or p-type.

In addition, a second conductivity type semiconductor layer 236 may be formed on the active layer 234.

The second conductivity type semiconductor layer 236 may be formed of a semiconductor compound, for example, a group III-V compound semiconductor doped with a second conductivity type dopant. A second conductive semiconductor layer 236, for example, having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) It may include a semiconductor material. When the second conductive semiconductor layer 236 is a p-type semiconductor layer, the second conductive dopant may be a p-type dopant and may include Mg, Zn, Ca, Sr, and Ba. In addition, when the second conductive semiconductor layer 236 is an n-type semiconductor layer, the first conductive dopant may include Si, Ge, Sn, Se, Te as an n-type dopant, but is not limited thereto.

Here, unlike the above, the first conductivity type semiconductor layer 232 may include a p-type semiconductor layer, and the second conductivity type semiconductor layer 236 may include an n-type semiconductor layer. In addition, a third conductive semiconductor layer (not shown) including an n-type or p-type semiconductor layer may be formed on the first conductive semiconductor layer 232. Accordingly, the light emitting device according to the present embodiment It may include at least one of np, pn, npn, pnp junction structure.

In addition, the doping concentrations of the conductive dopants in the first conductive semiconductor layer 232 and the second conductive semiconductor layer 236 may be uniformly or non-uniformly formed. That is, the structure of the plurality of semiconductor layers may be formed in various ways, but is not limited thereto.

The conductive support substrate 265 supports the light emitting structure 230 and may be a conductive substrate. In addition, it may be formed of a material having high electrical conductivity and thermal conductivity. For example, the conductive support substrate 265 is a base substrate having a predetermined thickness, and is formed of molybdenum (Mo), silicon (Si), tungsten (W), copper (Cu), and aluminum (Al). It may be made of a material selected from the group or alloys thereof, and also, gold (Au), copper alloy (Cu Alloy), nickel (Ni), copper-tungsten (Cu-W), carrier wafers (eg GaN, Si , Ge, GaAs, ZnO, SiGe, SiC, SiGe, Ga ₂ O _3, etc.) or a conductive sheet may be optionally included.

An ohmic layer 250 may be formed in contact with the second conductivity-type semiconductor layer 236 of the light emitting structure 230. Since the second conductivity-type semiconductor layer 236 has a low impurity doping concentration and high contact resistance, and thus, ohmic characteristics with a metal may not be good, the ohmic layer 250 may be formed to improve such ohmic characteristics. It is not.

The ohmic layer 250 may be a light transmissive conductive layer and a metal may be selectively used. For example, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), and indium aluminum zinc (AZO) oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON (IZO Nitride), AGZO (Al- Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, or Ni / IrOx / Au / ITO, Ag, Ni, Cr, Ti, Al, Rh , Pd, Ir, Sn, In, Ru, Mg, Zn, Pt, Au, can be formed including at least one of Hf, and is not limited to these materials.

The reflective layer 255 may be disposed under the ohmic layer 250. The reflective layer 255 is formed of, for example, a material consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, and optional combinations thereof, or It may be formed in multiple layers using a light transmissive conductive material such as IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO. In addition, the reflective layer 260 may be laminated with IZO / Ni, AZO / Ag, IZO / Ag / Ni, AZO / Ag / Ni, or the like. In addition, when the reflective layer 255 is formed of a material in ohmic contact with the light emitting structure (eg, the second conductivity type semiconductor layer 236), the ohmic layer 250 may not be separately formed, but is not limited thereto.

The reflective layer 255 may effectively reflect the light generated from the active layer 234 to greatly improve the light extraction to total reflection efficiency of the light emitting device.

A coupling layer 260 may be formed between the reflective layer 255 and the support substrate 265. The bonding layer 260 may include a barrier metal or a bonding metal, and may include, for example, at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, or Ta. It does not limit to this.

In addition, a passivation layer 290 may be formed on at least a portion of the side surface of the light emitting structure 230 and the first conductivity-type semiconductor layer 232.

The passivation layer 290 may be made of an insulating material, and the insulating material may be made of non-conductive oxide or nitride to protect the light emitting structure. As an example, the passivation layer may be formed of a silicon oxide (SiO ₂ ) layer, an oxynitride layer, or an aluminum oxide layer.

The first electrode pad 280 may be disposed on the first conductive semiconductor layer 232, and may include aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu), and gold. It may be formed in a single layer or a multilayer structure including at least one of (Au).

Each light emitting device 200 may be directly connected to the first electrode pattern 130 and may be connected to the second electrode pattern 140 by a wire 160.

The light transmitting layer 160 may be formed to surround the light emitting device 200 to protect the light emitting device 200 from foreign matter or moisture introduced from the outside.

The light transmitting layer 160 may be formed inside or above the cavity to fill the cavity formed in the package body 110, and the light transmitting layer 160 having the flat upper surface is shown, but the upper surface is convex and the lens It can also play a role.

When the light emitting device 200 is a UV LED, the light-transmitting layer 160 may be made of a material that does not change color or change due to ultraviolet light. The light transmissive layer 160 may include a silicone resin and glass or phosphor 170 to change the wavelength of light emitted from the light emitting device 200.

The light of the first wavelength region emitted from the light emitting device 200 is excited by the phosphor 170 and converted into light of the second wavelength region having a longer wavelength, and the light of the second wavelength region causes the lens (not shown). As it passes, the light path may change.

The first electrode 130 and the second electrode 140 are first leads disposed on the bottom surface of the package body 110 through via-hole connecting electrodes 121a and 122a formed in the package body 110. It is electrically connected to the frame 105a and the second lead frame 105b, respectively.

The first electrode pattern 130 or the second electrode pattern 140 may be made of gold (Au), silver (Ag), or aluminum (Al). When the electrode pattern is made of gold, the oxidation resistance is strong, so the durability of the electrode pattern may be improved. This is strong and the possibility of a short circuit between the electrode patterns can be reduced.

3A to 3C are views illustrating an electrode pattern arrangement of the light emitting device package of FIG. 2, and FIG. 4 is a detailed view of a portion of FIG. 3A.

Since four light emitting devices 200 are disposed in the light emitting device package 100 of FIG. 2, the four first electrode patterns 131, 132, 133, and 134 and the second electrode patterns 141, 142, and 143 are illustrated in FIG. 3A. , 144 may be disposed respectively. Since the four first electrode patterns 131, 132, 133, and 134 described above may have the same polarity, the four first electrode patterns 131, 132, 133, and 134 may be connected to one lead frame. Since they may have the same polarity to each other, they may be connected to another lead frame.

In the top view of FIG. 3A, the ceramic layers 110c and 110d constituting the sidewalls of the cavity are shown at the outside, and the ceramic layer 110b constituting the bottom surface of the cavity is exposed at the center. In the top view of FIG. 3, the width c of the ceramic layer 110d disposed at the top in FIG. 2 is shown to be the widest, and the width b of the ceramic layer 110c disposed at the top is shown to be narrower. Only the narrowest width a of the ceramic layer 110b constituting the bottom surface of the cavity is shown.

The arrangement of the first electrode patterns 131, 132, 133, and 134 and the second electrode patterns 141, 142, 143, and 144 described above are symmetrical with respect to the exact center of the ceramic layer 110b forming the bottom surface of the cavity. Can be achieved. Hereinafter, a part of the electrode pattern structure will be described in detail with reference to FIG. 4.

The first electrode pattern 131 is disposed at the center region of the bottom surface of the cavity, and the second electrode pattern 132 is disposed at the edge region of the bottom surface of the cavity. The arrangement of the first electrode pattern 131 and the second electrode pattern 132 may be changed.

In the second electrode pattern 141, the width f of the side is disposed to be narrower than the width e of the edge. The ceramic layer 110b is exposed in the region d in which the width of the side of the second electrode pattern 141 is narrowly disposed. That is, the width of the maximum pattern and the width of the minimum pattern may be different from each other in the second electrode pattern 141. This arrangement increases the area where the light emitted from the light emitting element is reflected by the ceramic layer 110b. The light efficiency of the package can be improved.

In addition, the area in which the exposed ceramic layer 110b is in contact with the light transmitting layer is also increased, and the bonding force between the ceramic layer 110b and the silicone resin in the light transmitting layer is greater than that of the metal and the second electrode pattern 141. This is larger and the stability in the structure of the light emitting device package can be increased.

The protrusion p may be formed at the edge of the second electrode pattern 141. The above-described via hole type connection electrode may be disposed on the ceramic layer 110b forming the package body corresponding to the protrusion p to connect the first electrode pattern 141 with the lead frame. ) May be an extension pattern. The above-described protrusions p to the expansion pattern may be electrically connected to the through holes formed in the package body, and may be electrically connected to the lead frame and the like below the package body.

In FIG. 3B, a region d in which the electrode patterns are narrowly formed by patterning the first electrode patterns 131 to 134 is formed, and the region in which the widths of the sides of the first electrode patterns 131 to 134 are narrowly formed ( d) the ceramic layer 110b is exposed. That is, in the region where the first electrode patterns 131 to 134 are narrowly disposed, the area reflected by the ceramic layer 110b may be increased, thereby improving light efficiency of the light emitting device package.

In FIG. 3C, the first electrode patterns 131 to 134 are patterned to form a region d in which the electrode patterns are narrowly disposed in the edge region, and the effect thereof is the same as described with reference to FIG. 3B.

3A to 3C, the configuration in which the electrode patterns are narrowly formed to expose the ceramic layer may be implemented in at least one of four first electrode patterns 131 to 134 or second electrode patterns 141 to 144, respectively. have.

In FIG. 4, when the width f of the side of the second electrode pattern 141 is 0.35 mm, the width e of the edge may be 0.45 mm. The width between the second electrode pattern 141 and the first electrode pattern 131 may be 0.1 millimeter, and the width g of the wider area at the edge of the second electrode pattern 141 is 0.45. It can be millimeters.

A plurality of light emitting device packages according to the embodiment may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, or the like, which is an optical member, may be disposed on an optical path of the light emitting device package. Such a light emitting device package, a substrate, and an optical member can function as a light unit. Yet another embodiment may be implemented as a display device, an indicator device, or a lighting system including the semiconductor light emitting device or the light emitting device package described in the above embodiments, for example, the lighting system may include a lamp, a street lamp. . Hereinafter, a head lamp and a backlight unit will be described as an embodiment of an illumination system in which the above-described light emitting device package is disposed.

6 is a view illustrating an embodiment of a head lamp including a light emitting device package.

The light generated by the light source module 401 is reflected by the reflector 420 and the shade 430, and the light generated by the light source module 401 and the light reflected by the reflector 420 are refracted by the lens 440. May face forward of the bodywork.

The light source module 401 may be a light source module according to the above embodiments, and includes a light emitting device package on a circuit board.

In the light emitting device package in the light source module disposed in the head lamp, the electrode pattern is made of gold, so that the durability of the electrode pattern is strong, and the area of the electrode pattern is reduced, thereby increasing the exposed area of the ceramic layer, thereby improving light efficiency and exposing the ceramic substrate. And the bonding strength with the silicone resin and the like in the light transmitting layer is greater, the stability of the structure is improved.

7 is a diagram illustrating an embodiment of an image display device including a light emitting device package.

The image display device 800 according to the exemplary embodiment may include light source modules 830 and 835, a reflector 820 on the bottom cover 810, and light emitted from the light source module in front of the reflector 820. A light guide plate 840 guiding in front of the image display device, a first prism sheet 850 and a second prism sheet 860 disposed in front of the light guide plate 840, and a front of the second prism sheet 860. It includes a panel 870 disposed in the color filter 880 disposed in the first half of the panel 870.

The light source module includes the above-described light emitting device package 835 on the circuit board 830. Here, the circuit board 830 may be a PCB and the like, and the light emitting device package 835 is as described in the above embodiments.

The bottom cover 810 may receive components in the display device 800. The reflective plate 820 may be provided as a separate component as shown in the figure, or may be provided in the form of a high reflective material on the rear surface of the light guide plate 840 or the front surface of the bottom cover 810. Do.

Here, the reflection plate 820 can be made of a material having a high reflectance and can be used in an ultra-thin shape, and polyethylene terephthalate (PET) can be used.

The light guide plate 840 scatters light emitted from the light emitting device package module so that the light is uniformly distributed over the entire screen area of the LCD. Accordingly, the light guide plate 830 is made of a material having a good refractive index and transmittance. The light guide plate 830 may be formed of polymethyl methacrylate (PMMA), polycarbonate (PC), or polyethylene (PE). In addition, the light guide plate may be omitted, and thus an air guide method in which light is transmitted in the space on the reflective sheet 820 may be possible.

The first prism sheet 850 is formed of a translucent and elastic polymer material on one surface of the support film, and the polymer may have a prism layer in which a plurality of three-dimensional structures are repeatedly formed. Here, the plurality of patterns may be provided in the stripe type and the valley repeatedly as shown.

In the second prism sheet 860, the direction of the floor and the valley of one surface of the support film may be perpendicular to the direction of the floor and the valley of one surface of the support film in the first prism sheet 850. This is to evenly distribute the light transmitted from the light source module and the reflective sheet in all directions of the panel 870.

In the present embodiment, the first prism sheet 850 and the second prism sheet 860 form an optical sheet, which is composed of another combination, for example, a micro lens array or a diffusion sheet and a micro lens array. Or a combination of one prism sheet and a micro lens array.

The liquid crystal display panel (Liquid Crystal Display) may be disposed on the panel 870, in addition to the liquid crystal display panel 860 may be provided with other types of display devices that require a light source.

The panel 870 is a state in which the liquid crystal is located between the glass body and the polarizing plate is placed on both glass bodies in order to use the polarization of light. Here, the liquid crystal has an intermediate property between a liquid and a solid, and liquid crystals, which are organic molecules having fluidity like a liquid, are regularly arranged like crystals. The liquid crystal has a structure in which the molecular arrangement is changed by an external electric field And displays an image.

The liquid crystal display panel used in the image display apparatus uses a transistor as an active matrix method as a switch for adjusting the voltage supplied to each pixel.

The front surface of the panel 870 is provided with a color filter 880 to transmit the light projected from the panel 870, only the red, green and blue light for each pixel can represent an image.

In the light emitting device package disposed in the image display device, the electrode pattern is made of gold, so that the durability of the electrode pattern is increased, the area of the electrode pattern is reduced, and the exposed area of the ceramic layer is increased, thereby improving light efficiency. The bonding force with the silicone resin and the like in the layer is greater, so that the stability of the structure is improved.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, This is possible.

Therefore, the scope of the present invention should not be limited to the described embodiments, but should be determined not only by the claims below but also by the equivalents of the claims.

100: light emitting device package 105a, 105b: lead frame
110: ceramic substrate 110a, 110b, 110c, 110d: ceramic layer
121a, 122a: connection electrode
130, 131, 132, 133, and 134: first electrode pattern
140, 141, 142, 143, 144: second electrode pattern
160: light transmitting layer 170: phosphor
200: light emitting device 400: head lamp
410: light emitting device module 420: reflector
430: Shade 440: Lens
800: display device 810: bottom cover
820: reflector 830: circuit board module
840: Light guide plate 850, 860: First and second prism sheet
870 panel 880 color filter

Claims (13)

A package body;
At least one first electrode pattern and a second electrode pattern disposed on the package body;
A light emitting device electrically connected to the first electrode pattern and the second electrode pattern, respectively;
At least one of the first electrode pattern and the second electrode pattern has a width of the maximum pattern and the width of the minimum pattern different from each other. The method according to claim 1,
The package body is made of ceramic, the light emitting device package is exposed to the package body on the surface where the first electrode pattern and the second electrode pattern is located. The method of claim 2,
The light emitting device package further comprises a light transmitting layer on the exposed package body. The method of claim 3,
The light emitting layer is a light emitting device package containing a silicone resin. The method according to claim 1,
The package body is a light emitting device package consisting of a plurality of layers. The method according to claim 1,
The package body has a cavity consisting of a bottom surface and side walls, the first electrode pattern and the second electrode pattern is disposed on the bottom surface of the cavity. The method of claim 6,
A light emitting layer is disposed in the cavity or on the cavity, wherein the light transmitting layer comprises at least one of a silicone resin or glass. The method of claim 6,
The light emitting device package in which the light emitting device is disposed on the first electrode pattern. The method of claim 7, wherein
The plurality of first electrode patterns and the second electrode pattern is disposed, each light emitting device package is disposed for each of the first electrode pattern. The method of claim 8,
Each of the light emitting devices is wire-bonded with the second electrode pattern. The method of claim 8,
The second electrode pattern is a light emitting device package including an expansion pattern. 12. The method of claim 11,
The package body has a through hole, the expansion pattern is a light emitting device package electrically connected to the through hole. The light emitting device package of any one of claims 1 to 12;
A circuit board electrically connected to the first electrode pattern and the second electrode pattern of the light emitting device package; And
An illumination system comprising an optical member for diffusing light transmitted from the light emitting device package.

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