KR20130059181A - Liquid crystal display device for in-plane switching mode and method for fabricating the same - Google Patents

Liquid crystal display device for in-plane switching mode and method for fabricating the same Download PDF

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Publication number
KR20130059181A
KR20130059181A KR1020110125361A KR20110125361A KR20130059181A KR 20130059181 A KR20130059181 A KR 20130059181A KR 1020110125361 A KR1020110125361 A KR 1020110125361A KR 20110125361 A KR20110125361 A KR 20110125361A KR 20130059181 A KR20130059181 A KR 20130059181A
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pixel
electrodes
electrode
substrate
liquid crystal
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KR1020110125361A
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Korean (ko)
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장훈
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엘지디스플레이 주식회사
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Publication of KR20130059181A publication Critical patent/KR20130059181A/en

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Geometry (AREA)

Abstract

PURPOSE: An in-plane switching mode liquid crystal display device and a manufacturing method thereof are provided to improve a transmittance of a pixel domain by forming a gate line and a thin film transistor in the center of the pixel domain in which a disclination is generated. CONSTITUTION: First and second pixel electrodes(109a,109b) are divided into an upper pixel domain and a lower pixel domain from a gate line(111). The first and second pixel electrodes are arranged in the upper and lower pixel domains so that the first and second pixel electrodes are parallel to a data line(103). Common electrodes(131) are arranged on the first and second electrodes at a fixed interval. A common line(130) is overlapped with the data line while the common line is formed with the common electrodes in one united body.

Description

Transverse electric field type liquid crystal display device and manufacturing method therefor {Liquid Crystal Display Device for In-Plane Switching Mode and Method for fabricating the same}

The present invention relates to a transverse electric field type liquid crystal display device and a manufacturing method thereof.

In general, a liquid crystal display (LCD) displays an image by adjusting a light transmittance of a liquid crystal having dielectric anisotropy using an electric field. In the liquid crystal display, a color filter substrate on which a color filter array is formed and a thin film transistor array substrate on which a thin film transistor (TFT) array is formed are bonded to each other with a liquid crystal interposed therebetween.

Recently, in order to solve the narrow viewing angle problem of the liquid crystal display, a liquid crystal display adopting various new methods has been developed. Liquid crystal displays having a wide viewing angle include an in-plane switching mode (IPS), an optically compensated birefrigence mode (OCB), and a fringe field spooling (FFS).

The horizontal electric field type liquid crystal display device arranges the pixel electrode and the common electrode on the same substrate to generate a horizontal electric field between the electrodes. As a result, the long axes of the liquid crystal molecules are arranged in a horizontal direction with respect to the substrate, and thus have a wide viewing angle characteristic as compared with the conventional twisted nematic (TN) type liquid crystal display.

1 illustrates a pixel structure of a transverse electric field type liquid crystal display device according to the related art.

Referring to FIG. 1, a conventional transverse electric field type liquid crystal display device is divided into a display area in which a plurality of pixel areas are formed and a non-display area in which a pad area is formed, and the gate lines 1 and the data lines 3 intersect with each other. To define a sub-pixel region.

The thin film transistor TFT, which is a switching element, is disposed in an area where the gate line 1 and the data line 3 cross each other. The thin film transistor includes a gate electrode, a source / drain electrode, and a channel layer drawn out to the pixel area wider than the gate line 1.

In addition, a gate pad 11 extending from the gate line 1 is formed in the pad region, and the gate pad contact electrode 30 electrically contacted with each other through the first contact hole 31 on the gate pad 11. ) Is formed.

In addition, a data pad 12 extending from the data line 3 is formed in the data pad area, and a data pad contact electrode (eg, electrically contacted with each other through a second contact hole 33 on the data pad 12). 32) is formed.

In the pixel region, a pixel electrode 19 having a plate structure is disposed in a direction parallel to the data line 3. In addition, the common electrodes 16 having a plurality of slit bar structures are disposed on the pixel electrode 19 at predetermined intervals. In addition, a common line 15 integrally formed with the common electrodes 16 is disposed around the pixel area. The common line 15 overlaps the gate line 1 and the data line 3 along the circumference of the pixel area.

In addition, the pixel electrode 19 and the common electrode 16 of the present invention are vertically symmetrical along the data line 3 with respect to the pixel center line (pixel center region B) parallel to the gate line 1. It is bent. Therefore, the pixel electrode 19 and the common electrode 16 are bent at the center of the pixel region.

However, in the conventional transverse electric field type liquid crystal display device as described above, the transmittance is sharply reduced in the center region B where the common electrode 16 and the pixel electrode 19 are bent and the edge region A of the common electrodes 16. A disclination area occurs.

FIG. 2 is a diagram illustrating a discretization failure generated in a bent region and an edge region of a pixel electrode in the prior art. As shown in FIG. 2, both edge regions of a pixel region where a gate line and a thin film transistor (TFT) are formed ( It can be seen that a discretization region having a sharply lower luminance occurs in the pixel center region B in which the pixel electrode and the common electrodes are bent to form A) and two domains.

This is because the pixel electrode and the common electrode are bent to form two domains, because the electric field generated in the upper and lower domain regions with respect to the pixel center at the boundary affects the liquid crystals disposed in the center, so that the liquid crystals do not rotate. to be.

In addition, the edge of the pixel region may be a region in which the liquid crystals do not rotate under the influence of the adjacent gate line or the thin film transistor.

Such a failure in discration causes consequently deterioration of screen quality.

SUMMARY OF THE INVENTION An object of the present invention is to provide a transverse electric field type liquid crystal display device having improved transmittance of a pixel region and a method of manufacturing the same by forming a gate line and a thin film transistor in the center of a pixel region where discrimination occurs.

In addition, the present invention provides a transverse electric field type liquid crystal display device and a method of manufacturing the same in which common electrodes are formed to seamlessly traverse pixel regions formed along a data line, thereby minimizing a decrease in transmittance (luminance) generated at the edge of the pixel region. There is another purpose to provide.

A transverse electric field type liquid crystal display device of the present invention for solving the above problems of the prior art, the substrate; Gate lines and data lines cross-aligned to define a unit pixel area on the substrate; A switching element disposed in an intersection region of the gate line and the data line; First and second pixel electrodes which are divided into an upper pixel area and a lower pixel area around the gate line and disposed in the upper and lower pixel areas so as to be parallel to the data line and symmetric with each other; Common electrodes disposed on the first pixel electrode and the second pixel electrode at predetermined intervals; And a common line formed integrally with the common electrodes and overlapping the data line.

In addition, a method for manufacturing a transverse electric field type liquid crystal display device according to another embodiment of the present invention, providing a substrate; Forming a metal film on the substrate, and then forming a gate electrode and a gate line in the display area according to a mask process; Forming a gate insulating film on the substrate on which the gate electrode is formed, and then forming a transparent conductive material on the entire surface of the substrate, and forming first and second pixel electrodes separated vertically around the gate line according to a mask process; step; Forming a channel layer on the substrate on which the first and second pixel electrodes are formed, forming a source / drain metal film on the entire surface of the substrate, and forming a source / drain electrode and a data line according to a mask process; And forming a passivation layer on the substrate on which the source / drain electrodes and the like are formed, and then forming a transparent conductive material on the entire surface of the substrate, and common electrodes on the first pixel electrode and the second pixel electrode according to a mask process; Forming a common line overlapping the data line.

The transverse electric field type liquid crystal display device and the manufacturing method thereof according to the present invention have the effect of improving the transmittance of the pixel region by forming the gate line and the thin film transistor in the center of the pixel region where the discrimination occurs.

In addition, the transverse electric field type liquid crystal display device and a method of manufacturing the same according to the present invention form common electrodes to seamlessly traverse the pixel areas formed along the data line, thereby minimizing a decrease in transmittance (luminance) generated at the edge of the pixel area. There is one effect.

1 illustrates a pixel structure of a transverse electric field type liquid crystal display device according to the related art.
FIG. 2 is a diagram illustrating a discretization failure generated in a bent region and an edge region of a pixel electrode in the prior art.
3 is a diagram illustrating a pixel structure of a transverse electric field type liquid crystal display device according to an exemplary embodiment of the present invention.
4A to 4C are views illustrating a manufacturing process of the present invention along the line II ′ of FIG. 3.
5A and 5B are diagrams illustrating a state in which a discretization defect is removed in a pixel area of a transverse electric field type liquid crystal display device according to the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The following embodiments are provided as examples to sufficiently convey the spirit of the present invention to those skilled in the art. Therefore, the present invention is not limited to the embodiments described below, but may be embodied in other forms. In the drawings, the size and thickness of the device may be exaggerated for convenience. Like numbers refer to like elements throughout.

In addition, in the description of the embodiments, each pattern, layer, film, region, or substrate is formed on or under the pattern of each pattern, layer, film, region, or substrate. In the case described, "on" and "under" include both those that are formed "directly" or "indirectly" through other components.

In addition, the criteria for the top, side or bottom of each component will be described with reference to the drawings. The size of each component in the drawings may be exaggerated for the sake of explanation and does not mean the size actually applied.

3 is a diagram showing a pixel structure of a transverse electric field type liquid crystal display device according to the present invention.

Referring to FIG. 3, the transverse electric field type liquid crystal display device of the present invention is divided into a display area in which a plurality of pixel areas are formed and a non-display area in which a pad area is formed, and the gate line 111 and the data line 103 are divided into two parts. Cross-aligned to define a sub-pixel region.

In particular, in the present invention, the gate line 111 is disposed in the center region of the pixel region, and the thin film transistor TFT which is a switching element is disposed in the region where the gate line 111 and the data line 103 cross each other. That is, unlike the pixel structure of the conventional transverse electric field type liquid crystal display device, an arbitrary first unit pixel area P1 is divided into an upper pixel area m1 and a lower pixel area m2 based on the pixel center.

Therefore, the second unit pixel area P2 adjacent to the arbitrary first unit pixel area P1 is also divided into an upper pixel area n1 and a lower pixel area n2.

Hereinafter, the first unit pixel region P1 will be described, but another adjacent pixel region has the same structure as the first unit pixel region P1.

The thin film transistor disposed at the center of the first unit pixel region P1 has a width wider than that of the gate line 111 and is integrally formed with the gate line 111, the channel layer, and the source / And a drain electrode. (See Figure 4c)

In addition, in the present invention, the first pixel electrode 109a and the second pixel electrode (parallel to the data line 103 and separated from each other based on the gate line 111 formed in the center of the first unit pixel region P1) 109b) is formed. The first pixel electrode 109a is formed in a plate structure in the upper pixel region m1 of the first unit pixel region P1, and the second pixel electrode 109b is formed in the first unit pixel region P1. Is formed in a plate structure in the lower pixel region m2.

 Further, in the first unit pixel region P1, the unit pixel regions P1, P2, and P1 may be disposed on the first pixel electrode 109a and the second pixel electrode 109b in a direction parallel to the data line 103. ... common electrodes 131 crossing ... are arranged at predetermined intervals. The common electrodes 131 are disposed on the first pixel electrode 109a and the second pixel electrode 109b at predetermined intervals.

In addition, the common electrodes 131 are integrally formed with the common wire 130 overlapping the data lines 103.

In addition, the first pixel electrode 109a and the second pixel electrode 109b formed in the unit pixel region P1 of the present invention may each have an upper pixel region (centered around the gate line 111 of the unit pixel region P1). It is formed to be symmetrical with a predetermined angle in the direction of m1) and the lower pixel region m2.

The common electrodes 131 are also bent to be symmetrical with respect to the gate line 111 in the upper pixel region m1 and the lower pixel region m2.

That is, in the unit pixel area P1 of the present invention, the data line 103, the common electrodes 131, and the first and second pixel electrodes 109a and 109b are formed around the gate line 111. It is a structure bent so as to be symmetrical with each other in the (X region). However, the data line 103, the common electrodes 131, and the first and second pixel electrodes 109a and 109b are disposed in parallel to each other in the left and right directions.

In the present invention, the pixel electrode disposed in the second pixel electrode 109a of the first unit pixel region P1 and the upper pixel region n1 of the second unit pixel region P2 is spaced apart from the pixel electrode by a predetermined distance. The common electrodes 131 disposed on the electrodes are seamlessly connected to minimize the decrease in transmittance (luminance) in the edge region Y of the unit pixel region P1.

In addition, since the thin film transistor and the gate line 111 are formed in the center of the first unit pixel region P1 of the present invention, the disclination generation region in the center does not act as a cause of lowering the pixel transmittance. That is, the pixel transmittance was improved by arranging the thin film transistor and the gate line, which were originally used as non-transmissive regions, in the disc generation region.

4A to 4C are views illustrating a manufacturing process of the present invention along the line II ′ of FIG. 3.

4A to 4C, a metal film is deposited on a substrate 100 made of a transparent insulating material by sputtering, and then a gate electrode 101 is formed in a pixel area, which is a display area, according to a first mask process. A gate line 111 formed integrally with the gate electrode 101 is formed.

In the first mask process, a photoresist, which is a photosensitive material, is formed on the deposited metal film, and then a photoresist pattern is formed by an exposure and development process using a mask, and an etching process is performed using the photoresist pattern as a mask. .

The metal film formed in the first mask process is formed from molybdenum (Mo), titanium (Ti), tantalum (Ta), tungsten (W), copper (Cu), chromium (Cr), aluminum (Al), or a combination thereof. Indium tin oxide (ITO), indium zinc oxide (IZO), and indium tin zinc oxide (ITZO) may be formed by stacking an alloy or a transparent conductive material.

In the drawing, the gate electrode 101 and the gate line 111 are formed as a single layer, but since they are not fixed, they may be formed by stacking two or more metal layers.

As described above, when the gate electrode 101 or the like is formed on the substrate 100, the gate insulating layer 112 is formed, and then one of ITO, IZO, or ITZO, which is a transparent conductive material, is formed on the substrate 100. Next, as described with reference to FIG. 3, the first pixel electrode 109a and the second pixel electrode 109b are respectively formed in the upper pixel area and the lower pixel area around the gate line 111 according to the second mask process. Form.

As described above, when the first and second pixel electrodes 109a and 109b are formed on the substrate 100, an amorphous silicon film and a doped amorphous silicon film (n + or p +) are sequentially formed, and then a third The channel layer 114 is formed on the gate insulating layer 112 on the gate electrode 101 by a mask process.

As described above, when the channel layer 114 is formed on the substrate 100, a source / drain metal film is formed on the entire surface of the substrate 100, and then the source / drain electrodes 117a and 117b are processed according to a fourth mask process. And a data line 103.

In this case, the drain electrode 117b is directly contacted with the first pixel electrode 109a and the second pixel electrode 109b without a separate contact process.

The source / drain metal film may include any one of an alloy formed from molybdenum (Mo), titanium (Ti), tantalum (Ta), tungsten (W), copper (Cu), chromium (Cr), aluminum (Al), or a combination thereof. You can use one. In addition, a transparent conductive material such as indium tin oxide (ITO) may be used. In addition, although the figure is formed of a single metal film, at least two or more metal films may be stacked in some cases.

As described above, when the source / drain electrodes 117a and 117b are completed to form the thin film transistor TFT on the substrate 100, the protective layer 108 is formed on the entire surface of the substrate 100 to protect the device.

As described above, when the protective film 108 is formed on the substrate 100, any one of ITO, ITZO, or IZO, which is a transparent conductive material, is formed on the entire surface of the substrate 100, and then the first mask is processed according to a fifth mask process. And the common electrodes 131 are formed on the second pixel electrodes 109a and 109b, and the common line 130 is integrally formed to overlap the data line 103.

In the present invention, as shown in FIG. 4C, the common line 130 is formed along the gate line 111 and the first open region OP1 in which the common line 130 is removed on the source / drain electrodes 117a and 117b. The removed second open area OP2 is formed.

In addition, in the present invention, the common electrodes 131 formed on the first and second pixel electrodes 109a and 109b are cut along unit pixel regions formed along the data line 103 as described with reference to FIG. 3. It is formed into a connected structure without.

5A and 5B illustrate a state in which a discretization defect is removed in a pixel area of a transverse electric field type liquid crystal display device according to the present invention.

Referring to FIGS. 5A and 5B together with FIG. 3, in the boundary region Y of the first unit pixel region P1 and the second unit pixel region P2 formed along the data line 103 of the present invention. It can be seen that no decrease in transmittance (luminance) occurs.

More specifically, when the pixel data 6V is applied to both the first unit pixel region P1 and the second unit pixel region P2 (FIG. 5A), no decrease in transmittance occurs at the boundary between the two unit pixel regions. . This is an improvement over 22.7% of the transmittance (luminance) of the pixel electrode edge region of the conventional transverse electric field type liquid crystal display.

 In addition, when the pixel data 6V is applied to the first unit pixel region P1 and the pixel data is not supplied to the second unit pixel region P2 (OV), the transmittance decreases at the edge of the first unit pixel region. It can be seen that is significantly reduced (22.0% transmittance increase compared to the past)

As described above, in the present invention, the pixel electrode and the common electrode are bent at the center of the pixel for the conventional two-domain structure, and thus, the gate line and the thin film transistor are disposed in the region where the discrimination failure occurs, thereby reducing the transmittance of the pixel region. Prevented.

Further, in the present invention, the gate line is formed in the center of the unit pixel region, and the pixel electrodes are divided up and down around the gate line, and the common electrodes are seamlessly connected to adjacent pixel regions so that they are generated at the edge of the pixel region. Eliminate discretization failure.

Although the above description has been made with reference to the embodiments, these are merely examples and are not intended to limit the present invention. Those skilled in the art to which the present invention pertains should not be exemplified above without departing from the essential characteristics of the present embodiments. It will be appreciated that many variations and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

101: gate electrode 103: data line
109a: first pixel electrode 109b: second pixel electrode
111: gate line 108: protective film
130: common line 131: common electrode
P1: first unit pixel region P2: second unit pixel region

Claims (9)

Board;
Gate lines and data lines cross-aligned to define a unit pixel area on the substrate;
A switching element disposed in an intersection region of the gate line and the data line;
First and second pixel electrodes which are divided into an upper pixel area and a lower pixel area around the gate line and disposed in the upper and lower pixel areas so as to be parallel to the data line and symmetric with each other;
Common electrodes disposed on the first pixel electrode and the second pixel electrode at predetermined intervals; And
And a common line formed integrally with the common electrodes and overlapping the data line.
The transverse electric field liquid crystal display device according to claim 1, wherein the common electrodes are formed in a seamless structure along adjacent unit pixel areas formed along the data line.
The transverse electric field liquid crystal display device according to claim 2, wherein the common electrodes are connected to each other at a boundary of a unit pixel area formed along the data line.
The transverse electric field liquid crystal display device according to claim 1, wherein the data line, the common electrodes, the first pixel electrode, and the second pixel electrode are formed in a fold structure around a gate line formed in the center of a unit pixel area. .
The transverse electric field liquid crystal display device according to claim 1, wherein the drain electrode of the switching element is in direct contact with each of the first and second pixel electrodes disposed in the unit pixel region.
Providing a substrate;
Forming a metal film on the substrate, and then forming a gate electrode and a gate line in the display area according to a mask process;
Forming a gate insulating film on the substrate on which the gate electrode is formed, and then forming a transparent conductive material on the entire surface of the substrate, and forming first and second pixel electrodes separated vertically around the gate line according to a mask process; step;
Forming a channel layer on the substrate on which the first and second pixel electrodes are formed, forming a source / drain metal film on the entire surface of the substrate, and forming a source / drain electrode and a data line according to a mask process; And
After the passivation layer is formed on the substrate on which the source / drain electrodes and the like are formed, a transparent conductive material is formed on the entire surface of the substrate, and the common electrodes and the common electrode on the first pixel electrode and the second pixel electrode according to a mask process. A method of manufacturing a transverse electric field type liquid crystal display device comprising forming a common line overlapping a data line.
7. The method of claim 6, wherein the drain electrode is in direct contact with the first and second pixel electrodes, respectively.
The transverse electric field of claim 6, wherein a region in which the first pixel electrode and the second pixel electrode are formed is a unit pixel region, and common electrodes formed on the first and second pixel electrodes are connected to each other. Method of manufacturing a liquid crystal display device.
The method of claim 6, wherein the common electrodes are formed to be connected to each other in a plurality of unit pixel areas formed along the data line.
KR1020110125361A 2011-11-28 2011-11-28 Liquid crystal display device for in-plane switching mode and method for fabricating the same KR20130059181A (en)

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CN105938282A (en) * 2016-06-22 2016-09-14 深圳市华星光电技术有限公司 Liquid crystal display pixel structure and liquid crystal display device
US9500924B2 (en) 2014-06-30 2016-11-22 Shanghai Avic Optoelectronics Co., Ltd. Array substrate and liquid crystal display device
US9519197B1 (en) 2015-06-23 2016-12-13 Samsung Display Co., Ltd. Liquid crystal display substrate and liquid crystal display panel having the same
CN106909007A (en) * 2015-12-22 2017-06-30 三星显示有限公司 Liquid crystal display device
CN107561800A (en) * 2017-09-19 2018-01-09 武汉天马微电子有限公司 A kind of array base palte, display panel and display device
US10185193B2 (en) 2016-06-22 2019-01-22 Shenzhen China Star Optoelectronics Technology Co., Ltd Liquid crystal pixel structure and liquid crystal display

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US9519197B1 (en) 2015-06-23 2016-12-13 Samsung Display Co., Ltd. Liquid crystal display substrate and liquid crystal display panel having the same
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CN105938282A (en) * 2016-06-22 2016-09-14 深圳市华星光电技术有限公司 Liquid crystal display pixel structure and liquid crystal display device
WO2017219398A1 (en) * 2016-06-22 2017-12-28 深圳市华星光电技术有限公司 Liquid crystal display pixel structure and liquid crystal display device
US10185193B2 (en) 2016-06-22 2019-01-22 Shenzhen China Star Optoelectronics Technology Co., Ltd Liquid crystal pixel structure and liquid crystal display
JP2019517683A (en) * 2016-06-22 2019-06-24 深▲せん▼市華星光電技術有限公司Ｓｈｅｎｚｈｅｎ Ｃｈｉｎａ Ｓｔａｒ Ｏｐｔｏｅｌｅｃｔｒｏｎｉｃｓ Ｔｅｃｈｎｏｌｏｇｙ Ｃｏ．， Ｌｔｄ． Liquid crystal display pixel configuration and liquid crystal display device
CN107561800A (en) * 2017-09-19 2018-01-09 武汉天马微电子有限公司 A kind of array base palte, display panel and display device
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