KR20130047661A - 전자 어셈블리들을 제조하는 방법들 - Google Patents

전자 어셈블리들을 제조하는 방법들 Download PDF

Info

Publication number
KR20130047661A
KR20130047661A KR20120121054A KR20120121054A KR20130047661A KR 20130047661 A KR20130047661 A KR 20130047661A KR 20120121054 A KR20120121054 A KR 20120121054A KR 20120121054 A KR20120121054 A KR 20120121054A KR 20130047661 A KR20130047661 A KR 20130047661A
Authority
KR
South Korea
Prior art keywords
die
circuit element
substrate
liquid
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR20120121054A
Other languages
English (en)
Korean (ko)
Inventor
데이비드 케이. 푸트
제임스 디. 게티
쟌강 자오
Original Assignee
노드슨 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 노드슨 코포레이션 filed Critical 노드슨 코포레이션
Publication of KR20130047661A publication Critical patent/KR20130047661A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/012—Manufacture or treatment of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistors
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits by soldering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07232—Compression bonding, e.g. thermocompression bonding
    • H10W72/07233—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H10W72/07338—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy hardening the adhesive by curing, e.g. thermosetting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H10W72/325—Die-attach connectors having a filler embedded in a matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/381—Auxiliary members
    • H10W72/387—Flow barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/726—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Wire Bonding (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Die Bonding (AREA)
KR20120121054A 2011-10-31 2012-10-30 전자 어셈블리들을 제조하는 방법들 Ceased KR20130047661A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/285,547 US8597982B2 (en) 2011-10-31 2011-10-31 Methods of fabricating electronics assemblies
US13/285,547 2011-10-31

Publications (1)

Publication Number Publication Date
KR20130047661A true KR20130047661A (ko) 2013-05-08

Family

ID=48172824

Family Applications (1)

Application Number Title Priority Date Filing Date
KR20120121054A Ceased KR20130047661A (ko) 2011-10-31 2012-10-30 전자 어셈블리들을 제조하는 방법들

Country Status (5)

Country Link
US (1) US8597982B2 (https=)
JP (2) JP2013098566A (https=)
KR (1) KR20130047661A (https=)
CN (1) CN103117229B (https=)
TW (1) TWI532108B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200053658A (ko) * 2017-03-17 2020-05-18 어플라이드 머티어리얼스, 인코포레이티드 기판의 진공 프로세싱을 위한 장치, 기판의 진공 프로세싱을 위한 시스템, 및 진공 챔버 내에서의 기판 캐리어 및 마스크 캐리어의 이송을 위한 방법

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11181688B2 (en) 2009-10-13 2021-11-23 Skorpios Technologies, Inc. Integration of an unprocessed, direct-bandgap chip into a silicon photonic device
US8796075B2 (en) 2011-01-11 2014-08-05 Nordson Corporation Methods for vacuum assisted underfilling
US8816507B2 (en) 2012-07-26 2014-08-26 Taiwan Semiconductor Manufacturing Company, Ltd. Package-on-Package structures having buffer dams and method for forming the same
US8994155B2 (en) * 2012-07-26 2015-03-31 Taiwan Semiconductor Manufacturing Company, Ltd. Packaging devices, methods of manufacture thereof, and packaging methods
US10192810B2 (en) 2013-06-28 2019-01-29 Intel Corporation Underfill material flow control for reduced die-to-die spacing in semiconductor packages
US10204887B2 (en) * 2013-12-18 2019-02-12 Lumileds Llc Reflective solder mask layer for LED phosphor package
TWI544584B (zh) * 2014-01-17 2016-08-01 菱生精密工業股份有限公司 Copper substrate with barrier structure and manufacturing method thereof
US9805997B2 (en) * 2014-01-27 2017-10-31 Taiwan Semiconductor Manufacturing Company, Ltd. Packaging methods for semiconductor devices with encapsulant ring
US9798088B2 (en) * 2015-11-05 2017-10-24 Globalfoundries Inc. Barrier structures for underfill blockout regions
US9978674B2 (en) * 2016-04-05 2018-05-22 Samsung Electronics Co., Ltd. Chip-on-film semiconductor packages and display apparatus including the same
US10879195B2 (en) * 2018-02-15 2020-12-29 Micron Technology, Inc. Method for substrate moisture NCF voiding elimination
US12575415B2 (en) * 2020-01-24 2026-03-10 Sk Hynix Nand Product Solutions Corp. Keep out zone with hydrophobic surface for integrated circuit (IC) package
US11476707B2 (en) * 2020-10-06 2022-10-18 Apple Inc. Wireless power system housing
US12159817B2 (en) * 2021-07-09 2024-12-03 Macom Technology Solutions Holdings, Inc. High performance semiconductor device

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2700316B2 (ja) * 1987-06-10 1998-01-21 三菱電機株式会社 有機物質表面の改質方法
US5910341A (en) * 1996-10-31 1999-06-08 International Business Machines Corporation Method of controlling the spread of an adhesive on a circuitized organic substrate
US6103457A (en) * 1998-05-28 2000-08-15 Philips Electronics North America Corp. Method for reducing faceting on a photoresist layer during an etch process
EP1129480A1 (en) 1998-10-05 2001-09-05 Kulicke & Soffa Investments, Inc Semiconductor copper bond pad surface protection
US6692834B1 (en) 1999-06-28 2004-02-17 Medtronic, Inc. Method for coating implantable devices
US6794225B2 (en) * 2002-12-20 2004-09-21 Intel Corporation Surface treatment for microelectronic device substrate
MY134318A (en) 2003-04-02 2007-12-31 Freescale Semiconductor Inc Integrated circuit die having a copper contact and method therefor
US20050121310A1 (en) * 2003-12-03 2005-06-09 Intel Corporation Method and substrate to control flow of underfill
JP4823656B2 (ja) * 2005-11-22 2011-11-24 パナソニック株式会社 パッケージ部品の製造方法
US20080142996A1 (en) * 2006-12-19 2008-06-19 Gopalakrishnan Subramanian Controlling flow of underfill using polymer coating and resulting devices
US8262920B2 (en) * 2007-06-18 2012-09-11 Lam Research Corporation Minimization of mask undercut on deep silicon etch
JP2009099597A (ja) * 2007-10-12 2009-05-07 Nec Electronics Corp 半導体装置およびその製造方法
US8231568B2 (en) 2007-10-16 2012-07-31 Nordson Corporation Syringes with a reduced susceptibility to freeze-thaw void formation and methods of manufacturing such syringes
US8217514B2 (en) * 2008-04-07 2012-07-10 Stats Chippac Ltd. Integrated circuit packaging system with warpage control system and method of manufacture thereof
US8372238B2 (en) 2008-05-20 2013-02-12 Nordson Corporation Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes
KR101481577B1 (ko) * 2008-09-29 2015-01-13 삼성전자주식회사 잉크 젯 방식의 댐을 구비하는 반도체 패키지 및 그 제조방법
US7994629B2 (en) * 2008-12-05 2011-08-09 Stats Chippac Ltd. Leadless integrated circuit packaging system and method of manufacture thereof
US8226795B2 (en) 2009-02-03 2012-07-24 Nordson Corporation Magnetic clips and substrate holders for use in a plasma processing system
US8399305B2 (en) * 2010-09-20 2013-03-19 Stats Chippac, Ltd. Semiconductor device and method of forming dam material with openings around semiconductor die for mold underfill using dispenser and vacuum assist

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200053658A (ko) * 2017-03-17 2020-05-18 어플라이드 머티어리얼스, 인코포레이티드 기판의 진공 프로세싱을 위한 장치, 기판의 진공 프로세싱을 위한 시스템, 및 진공 챔버 내에서의 기판 캐리어 및 마스크 캐리어의 이송을 위한 방법

Also Published As

Publication number Publication date
TW201335999A (zh) 2013-09-01
TWI532108B (zh) 2016-05-01
CN103117229B (zh) 2018-02-09
US20130109136A1 (en) 2013-05-02
JP6290357B2 (ja) 2018-03-07
US8597982B2 (en) 2013-12-03
JP2017022421A (ja) 2017-01-26
CN103117229A (zh) 2013-05-22
JP2013098566A (ja) 2013-05-20

Similar Documents

Publication Publication Date Title
US8597982B2 (en) Methods of fabricating electronics assemblies
US9314882B2 (en) Methods for vacuum assisted underfilling
US5998242A (en) Vacuum assisted underfill process and apparatus for semiconductor package fabrication
US8377745B2 (en) Method of forming a semiconductor device
TWI556310B (zh) 用於半導體裝置封裝之鈍化層
US7442578B2 (en) Underfill compounds including electrically charged filler elements, microelectronic devices having underfill compounds including electrically charged filler elements, and methods of underfilling micoelectronic devices
US10373931B2 (en) Semiconductor package structure and method of manufacturing the same
WO2007137073A2 (en) Semiconductor device assembly with gap underfill
TW201407700A (zh) 半導體裝置的封裝方法及半導體裝置組件
US7550314B2 (en) Patterned plasma treatment to improve distribution of underfill material
JP5971868B2 (ja) 真空補助によるアンダーフィル形成方法
JP6142276B2 (ja) 電子部品実装装置および電子部品の製造方法
US7306976B2 (en) Technique for enhancing thermal and mechanical characteristics of an underfill material of a substrate/die assembly
EP2873092A1 (en) Method for vacuum assisted underfilling of an electronic device
JP7569247B2 (ja) 半導体製造装置
TWI897673B (zh) 用於封裝電子元件的底部填充方法
US7022554B2 (en) Method for fabricating circuit module
JPH11274189A (ja) 電子部品実装体の封止方法および封止装置

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000