KR20130019277A - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
KR20130019277A
KR20130019277A KR1020110081344A KR20110081344A KR20130019277A KR 20130019277 A KR20130019277 A KR 20130019277A KR 1020110081344 A KR1020110081344 A KR 1020110081344A KR 20110081344 A KR20110081344 A KR 20110081344A KR 20130019277 A KR20130019277 A KR 20130019277A
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South Korea
Prior art keywords
layer
light emitting
emitting device
semiconductor layer
dielectric
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KR1020110081344A
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Korean (ko)
Inventor
조현경
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엘지이노텍 주식회사
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Priority to KR1020110081344A priority Critical patent/KR20130019277A/en
Publication of KR20130019277A publication Critical patent/KR20130019277A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

Abstract

Embodiments relate to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system.
A light emitting device according to an embodiment includes a first conductive semiconductor layer; An active layer on the first conductivity type semiconductor layer; A second conductive semiconductor layer on the active layer; And a reflective layer on the second conductive semiconductor layer, wherein the reflective layer includes a first dielectric layer and a first ohmic contact portion formed on a portion of the second conductive semiconductor layer to contact the second conductive semiconductor layer. And a first metal reflective layer formed on the first dielectric layer.

Description

[0001] LIGHT EMITTING DEVICE [0002]

Embodiments relate to a light emitting device, a method of manufacturing the light emitting device, a light emitting device package and an illumination system.

A light emitting device is a device in which electrical energy is converted into light energy. For example, a light emitting device may implement various colors by adjusting a composition ratio of a compound semiconductor.

The light emitting device is being applied as an LED BLU (Back Light Unit), a lighting device, etc., and technology development for providing a high power, high efficiency light emitting device is in progress.

For example, according to the prior art, a reflective layer is employed to increase the light extraction efficiency of the light emitting device.

For example, according to the prior art, a reflective metal is used as the reflective layer, or a distributed bragg reflector (DBR) in which two transparent materials having different refractive indices are alternately stacked in multiple layers, but a more improved reflective layer is required. .

In addition, according to the prior art, it is required to develop a light emitting device having high efficiency by increasing the internal light emitting efficiency in addition to the external light extraction efficiency.

Embodiments provide a light emitting device having improved light extraction efficiency, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system.

In addition, embodiments provide a high efficiency light emitting device, a manufacturing method of the light emitting device, a light emitting device package and an illumination system.

The light emitting device according to the embodiment includes a first conductivity type semiconductor layer; An active layer on the first conductivity type semiconductor layer; A second conductivity type semiconductor layer on the active layer; And a reflective layer on the second conductive semiconductor layer, wherein the reflective layer includes a first dielectric layer and a first ohmic contact portion formed on a portion of the second conductive semiconductor layer to contact the second conductive semiconductor layer. And a first metal reflective layer formed on the first dielectric layer.

The embodiment can provide a light emitting device having improved light extraction efficiency, a manufacturing method of a light emitting device, a light emitting device package, and an illumination system.

In addition, according to the embodiment can provide a high efficiency light emitting device, a manufacturing method of the light emitting device, a light emitting device package and an illumination system.

1 is a sectional view of a light emitting device according to a first embodiment;
2 is a cross-sectional view of a light emitting device according to a second embodiment;
3 is a sectional view of a light emitting device according to a third embodiment;
4 to 6 are cross-sectional views of a method of manufacturing a light emitting device according to the embodiment;
7 is a cross-sectional view of a light emitting device package according to the embodiment.
8 is a perspective view of a lighting unit according to an embodiment;
9 is a perspective view of a backlight unit according to the embodiment;

In the description of the embodiments, it is to be understood that each layer (film), area, pattern or structure may be referred to as being "on" or "under" the substrate, each layer Quot; on "and" under "are intended to include both" directly "or" indirectly " do. Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.

(Example)

1 is a cross-sectional view of a light emitting device 100 according to a first embodiment.

The light emitting device 100 according to the first embodiment includes a first conductive semiconductor layer 112, an active layer 114 on the first conductive semiconductor layer 112, and a second layer on the active layer 114. And a reflective layer 120 on the conductive semiconductor layer 116 and the second conductive semiconductor layer 116.

The first conductivity type semiconductor layer 112, the active layer 114, and the second conductivity type semiconductor layer 116 may form a light emitting structure 110.

The light emitting structure 110 may be formed on the substrate 105, and the substrate 105 may include a conductive substrate or a non-conductive substrate 105.

Embodiments provide a high efficiency light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system.

To this end, the embodiment forms a current spreading layer (not shown), an electron injection layer (not shown) and a strain control layer (not shown) on the first conductivity-type semiconductor layer 112 to form an active layer 114 As a result, the reliability of the light emitting device can be improved to provide a high efficiency light emitting device. Description of each configuration will be described in detail in the description of the manufacturing method.

In addition, in the embodiment, an electron blocking layer (not shown) is formed between the active layer 114 and the second conductive semiconductor layer 116 to serve as electron blocking and cladding of the active layer. As a result, the luminous efficiency can be improved.

According to the embodiment, it is possible to provide a high efficiency light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system, including a current diffusion layer, an electron injection layer, a strain control layer, or an electron blocking layer.

In addition, the embodiment is to provide a light emitting device, a method of manufacturing a light emitting device, a light emitting device package and an illumination system with improved light extraction efficiency.

To this end, the embodiment may include a reflective layer 120 on the second conductive semiconductor layer 116, the reflective layer 120 is a first dielectric layer formed on a portion of the second conductive semiconductor layer 116. And a first metal reflective layer 123 formed on the first dielectric layer 121 while having a 121 and a first ohmic contact portion 123a in contact with the second conductive semiconductor layer 116.

The material of the first dielectric layer 121 may include, but is not limited to, SiO 2 , Al 2 O 3 , SiN x , TiO 2 , and the like, and the thickness of the first dielectric layer 121 is light emitted from the active layer. The wavelength λ may be λ / 4n, but is not limited thereto.

The first dielectric layer 121 is formed on a portion of the second conductive semiconductor layer 116, and the first ohmic contact portion is formed on the region of the second conductive semiconductor layer 116 where the first dielectric layer 121 is not formed. The first metal reflective layer 123 having the 123a may be formed.

The first metal reflective layer 123 may be formed of a metal layer including Al, Ag, or an alloy containing Al or Ag, but is not limited thereto.

The first ohmic contact portion 123a includes indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), and indium IGTO (IGTO). gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, Ni / IrOx / Au / ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, It may be formed including at least one of Hf, but is not limited to such materials.

In an embodiment, the area of the first ohmic contact 123a may be minimized to a level that does not interfere with the current flow. As a result, the region in which the first dielectric layer 121 is in contact with the second conductivity type semiconductor layer 116 secures about 90 to 95% of the upper surface of the second conductivity type semiconductor layer 116, thereby providing light through reflection. Extraction efficiency can be improved.

According to the embodiment, the ohmic contact portion through which the light emitting structure and the metal reflective layer are electrically connected to the dielectric layer may be provided to improve external light extraction efficiency and to effectively form an ohmic electrode between the semiconductor light emitting structure and the reflector.

In example embodiments, the reflective layer including the first dielectric layer 121 and the first metal reflective layer 123 may be formed in a plurality of cycles.

As a result, when a plurality of dielectric layers are disposed, a path of light that may be absorbed by the metal reflective layer may be changed to be extracted through reflection to the outside.

For example, the embodiment includes a second dielectric layer 122 and a second ohmic contact portion 124a formed on the first metal reflective layer 123 to contact the first metal reflective layer 123 while being in contact with the second dielectric layer. A second metal reflective layer 124 formed on the 122 may be further included.

The second dielectric layer 122 and the second metal reflective layer 124 may employ technical features of the first dielectric layer 121 and the first metal reflective layer 123.

For example, the material of the second dielectric layer 122 may include SiO 2 , Al 2 O 3 , SiN x , TiO 2 , and the like, and the thickness of the second dielectric layer 122 may include light emitted from the active layer. It may be λ / 4n with respect to the wavelength λ, but is not limited thereto.

In addition, the second metal reflective layer 124 may be formed of a metal layer including Al, Ag, or an alloy containing Al or Ag, but is not limited thereto.

The second ohmic contact portion 124a may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), and indium IGTO (IGTO). gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, Ni / IrOx / Au / ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, It may be formed including at least one of Hf, but is not limited to such materials.

The embodiment may include a first electrode 140 on the first conductivity-type semiconductor layer 112 exposed by mesa etching and a second electrode 130 on the reflective layer 120. The first electrode 140 and the second electrode 130 are titanium (Ti), chromium (Cr), nickel (Ni), aluminum (Al), platinum (Pt), gold (Au), tungsten (W), It may be formed of at least one of molybdenum (Mo), but is not limited thereto.

According to the embodiment, the ohmic contact portion through which the light emitting structure and the metal reflective layer are electrically connected to the dielectric layer may be provided to improve external light extraction efficiency and to effectively form an ohmic electrode between the semiconductor light emitting structure and the reflector.

Further, according to the embodiment, by employing a current diffusion layer, an electron injection layer, a strain control layer, an electron blocking layer, etc., the reliability of the light emitting device can be improved to provide a light emitting device with high efficiency. Description of each configuration will be described in detail in the description of the manufacturing method.

2 is a sectional view of the light emitting device 102 according to the second embodiment.

The light emitting device 102 according to the second embodiment may employ the technical features of the light emitting device 100 according to the first embodiment.

In the light emitting device 102 according to the second embodiment, the first dielectric layer 121a may include a plurality of first dielectric patterns P1 spaced apart from each other.

The first metal reflective layer 123 may be in contact with the second conductivity type semiconductor layer 116 exposed between the first dielectric patterns P1.

Since the first dielectric layer 121a includes a plurality of first dielectric patterns P1 spaced apart from each other, a ratio of light reflected by diffraction occurs as light emitted from the active layer passes between the first dielectric patterns P1. As the light reflected from the first metal reflective layer 123 passes between the first dielectric patterns P1, diffraction occurs to significantly increase the ratio of light extracted to the outside.

In an embodiment, the region in which the first dielectric layer 121a is in contact with the second conductivity-type semiconductor layer 116 secures about 90 to 95% of the upper surface of the second conductivity-type semiconductor layer 116, thereby providing light through reflection. Extraction efficiency can be improved.

6 is a cross-sectional view of the light emitting element 103 according to the third embodiment.

The light emitting device 103 according to the third embodiment may employ technical features of the light emitting devices according to the first and second embodiments.

In the light emitting device 103 according to the third exemplary embodiment, the first dielectric layer 121a may include a plurality of first dielectric patterns P1 spaced apart from each other.

In the light emitting device 103 according to the third embodiment, the second dielectric layer 122 may include a plurality of second dielectric patterns P2 spaced apart from each other.

As shown in the third embodiment, when a plurality of dielectric layers are disposed, there is an effect of changing the path of light that can be absorbed by the metal reflective layer so that it can be extracted through reflection to the outside.

In addition, according to the third embodiment, since the second dielectric layer 122a includes a plurality of second dielectric patterns P2 spaced apart from each other, the ratio of light extracted to the outside through diffraction with respect to the light emitted from the active layer is significantly increased. It can increase.

In an embodiment, the region where the second dielectric layer 122a is in contact with the second metal reflective layer 124 may secure about 90 to 95% of the upper surface of the second metal reflective layer 123 to increase light extraction efficiency through reflection. have.

The embodiment can provide a light emitting device having improved light extraction efficiency, and according to the embodiment, can provide a high efficiency light emitting device.

Hereinafter, the features of the embodiment will be described in more detail with reference to FIGS. 4 to 6, describing a method of manufacturing a light emitting device according to the embodiment. In the description of the manufacturing method, description will be made based on the first embodiment, and the features of the second and third embodiments will be described together.

First, the substrate 105 is prepared as shown in FIG. The substrate 105 may include a conductive substrate or an insulating substrate. For example, the substrate 105 may include sapphire (Al 2 O 3 ), SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge, and Ga 2 0. 3 May be used. A concavo-convex structure may be formed on the substrate 105, but the present invention is not limited thereto. Impurities on the surface may be removed by wet cleaning the substrate 105.

Thereafter, the light emitting structure 110 including the first conductive semiconductor layer 112, the active layer 114, and the second conductive semiconductor layer 116 may be formed on the substrate 105.

A buffer layer (not shown) may be formed on the substrate 105. The buffer layer (not shown) may mitigate lattice mismatch between the material of the light emitting structure 110 and the substrate 105, and the material of the buffer layer may be a Group III-V compound semiconductor such as GaN, InN, AlN, InGaN. It may be formed of at least one of, AlGaN, InAlGaN, AlInN.

An undoped semiconductor layer (not shown) may be formed on the buffer layer, but is not limited thereto.

The first conductivity type semiconductor layer 112 may be implemented as a group III-V compound semiconductor doped with a first conductivity type dopant, and when the first conductivity type semiconductor layer 112 is an N-type semiconductor layer, The first conductive dopant may be an N-type dopant and may include Si, Ge, Sn, Se, or Te, but is not limited thereto.

The first conductive semiconductor layer 112 may include a semiconductor material having a composition formula of In x Al y Ga 1 -x- y N (0? X? 1, 0? Y? 1, 0? X + . For example, the first conductive semiconductor layer 112 may be formed of one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, .

The first conductive semiconductor layer 112 may form an N-type GaN layer using a chemical vapor deposition method (CVD), molecular beam epitaxy (MBE), or sputtering or hydroxide vapor phase epitaxy (HVPE). . In addition, the first conductive semiconductor layer 112 may include a silane containing n-type impurities such as trimethyl gallium gas (TMGa), ammonia gas (NH 3 ), nitrogen gas (N 2 ), and silicon (Si). The gas SiH 4 may be injected and formed.

Thereafter, a current spreading layer (not shown) is formed on the first conductivity type semiconductor layer 112. The current diffusion layer (not shown) may be an undoped gallium nitride layer, but is not limited thereto. The current spreading layer may have a thickness of 50 nm to 200 nm, but is not limited thereto.

Subsequently, an embodiment may form an electron injection layer (not shown) on the current spreading layer. The electron injection layer (not shown) may be a first conductivity type gallium nitride layer. For example, the electron injection layer may be the electron injection efficiently by being doped at a concentration of the n-type doping element 6.0x10 18 atoms / cm 3 ~ 8.0x10 18 atoms / cm 3.

In addition, the embodiment can form a strain control layer (not shown) on the electron injection layer. For example, a strain control layer formed of In y Al x Ga (1-xy) N (0? X? 1, 0? Y? 1) / GaN or the like can be formed on the electron injection layer.

The strain control layer can effectively alleviate the stress that is caused by the lattice mismatch between the first conductive semiconductor layer 112 and the active layer 114.

Further, as the strain control layer is repeatedly laminated in at least six cycles having compositions such as first In x1 GaN and second In x2 GaN, more electrons are collected at a low energy level of the active layer 114, The probability of recombination of holes is increased and the luminous efficiency can be improved.

Thereafter, an active layer 114 is formed on the strain control layer.

The active layer 114 has an energy band inherent in the active layer (light emitting layer) material because electrons injected through the first conductive semiconductor layer 112 and holes injected through the second conductive semiconductor layer 116 formed thereafter meet each other. It is a layer that emits light with energy determined by.

The active layer 114 may be formed of at least one of a single quantum well structure, a multi quantum well structure (MQW), a quantum-wire structure, or a quantum dot structure. For example, the active layer 114 may be formed with a multiple quantum well structure by injecting trimethyl gallium gas (TMGa), ammonia gas (NH 3 ), nitrogen gas (N 2 ), and trimethyl indium gas (TMIn) But is not limited thereto.

The well layer / barrier layer of the active layer 114 is formed of one or more pair structures of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, GaP (InGaP) / AlGaP. But it is not limited thereto. The well layer may be formed of a material having a lower band gap than the band gap of the barrier layer.

In the embodiment, an electron blocking layer (not shown) is formed on the active layer 114 to serve as electron blocking and cladding of the active layer, thereby improving the luminous efficiency. For example, the electron blocking layer (not shown) may be formed of Al x In y Ga (1-xy) N (0 ≦ x ≦ 1,0 ≦ y ≦ 1) based semiconductor, and the active layer 114 It may have a higher energy band gap than the energy band gap of, and may be formed to a thickness of about 100 kHz to about 600 kHz, but is not limited thereto.

The electron blocking layer may be formed of a superlattice of Al z Ga (1-z) N / GaN (0? Z ? 1), but is not limited thereto.

The electron blocking layer can efficiently block the electrons that are ion-implanted into the p-type and overflow, and increase the hole injection efficiency. For example, the electron blocking layer can effectively prevent electrons that are overflowed by ion implantation of Mg in a concentration range of about 10 18 to 10 20 / cm 3 , and increase the hole injection efficiency.

The second conductive type semiconductor layer 116 is a second conductive type dopant is doped -5-group three-V compound semiconductor, for example, In x Al y Ga 1 -x- y N (0≤x≤1, 0≤y And a semiconductor material having a composition formula of ≦ 1, 0 ≦ x + y ≦ 1). When the second conductive semiconductor layer 116 is a P-type semiconductor layer, the second conductive dopant may include Mg, Zn, Ca, Sr, Ba, or the like as a P-type dopant.

The second conductivity type semiconductor layer 116 is a bicetyl cyclone containing p-type impurities such as trimethyl gallium gas (TMGa), ammonia gas (NH 3 ), nitrogen gas (N 2 ), and magnesium (Mg) in the chamber. Pentadienyl magnesium (EtCp 2 Mg) {Mg (C 2 H 5 C 5 H 4 ) 2 } may be injected to form a p-type GaN layer, but is not limited thereto.

In an exemplary embodiment, the first conductive semiconductor layer 112 may be an N-type semiconductor layer, and the second conductive semiconductor layer 116 may be a P-type semiconductor layer, but is not limited thereto. In addition, a semiconductor, for example, an N-type semiconductor layer (not shown) having a polarity opposite to that of the second conductive type may be formed on the second conductive type semiconductor layer 116. Accordingly, the light emitting structure 110 may be implemented as any one of an N-P junction structure, a P-N junction structure, an N-P-N junction structure, and a P-N-P junction structure.

Next, as shown in FIG. 5, a portion of the second conductivity type semiconductor layer 116 and the active layer 114 may be removed to expose the first conductivity type semiconductor layer 112. In this case, a portion of the first conductive semiconductor layer 112 may also be removed, but is not limited thereto.

Thereafter, the reflective layer 120 is formed on the second conductive semiconductor layer 116. The reflective layer 120 includes a first dielectric layer 121 and a first ohmic contact portion 123a formed on a portion of the second conductive semiconductor layer 116 to contact the second conductive semiconductor layer 116. It may include a first metal reflective layer 123 formed on the first dielectric layer 121.

As illustrated in FIG. 5, the first dielectric layer 121 may be formed in a layer form in a region other than the region of the first ohmic contact portion 123a.

In addition, in the second embodiment, the first dielectric layer 121a may include a plurality of first dielectric patterns P1 spaced apart from each other (see FIG. 2). The method of forming the first dielectric pattern P1 may be formed by an etching method, but is not limited thereto. Since the first dielectric layer 121a includes a plurality of first dielectric patterns P1 spaced apart from each other, a ratio of light reflected by diffraction occurs as light emitted from the active layer passes between the first dielectric patterns P1. As the light reflected from the first metal reflective layer 123 passes between the first dielectric patterns P1, diffraction occurs to significantly increase the ratio of light extracted to the outside.

Subsequently, in the embodiment, the region in which the first dielectric layer 121 is in contact with the second conductivity type semiconductor layer 116 secures about 90 to 95% of the upper surface of the second conductivity type semiconductor layer 116 to provide reflection. The light extraction efficiency can be increased.

The material of the first dielectric layer 121 may include, but is not limited to, SiO 2 , Al 2 O 3 , SiN x , TiO 2 , and the like, and the thickness of the first dielectric layer 121 is light emitted from the active layer. The wavelength λ may be λ / 4n, but is not limited thereto.

The first dielectric layer 121 is formed on a portion of the second conductive semiconductor layer 116, and the first ohmic contact portion is formed on the region of the second conductive semiconductor layer 116 where the first dielectric layer 121 is not formed. The first metal reflective layer 123 having the 123a may be formed.

The first metal reflective layer 123 may be formed of a metal layer including Al, Ag, or an alloy containing Al or Ag, but is not limited thereto.

The first ohmic contact portion 123a includes indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), and indium IGTO (IGTO). gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, Ni / IrOx / Au / ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, It may be formed including at least one of Hf, but is not limited to such materials.

According to the embodiment, the ohmic contact portion through which the light emitting structure and the metal reflective layer are electrically connected to the dielectric layer may be provided to improve external light extraction efficiency and to effectively form an ohmic electrode between the semiconductor light emitting structure and the reflector.

Next, as shown in FIG. 6, the reflective layer including the first dielectric layer 121 and the first metal reflective layer 123 may be formed in a plurality of cycles.

As a result, when a plurality of dielectric layers are disposed, a path of light that may be absorbed by the metal reflective layer may be changed to be extracted through reflection to the outside.

For example, the embodiment includes a second dielectric layer 122 and a second ohmic contact portion 124a formed on the first metal reflective layer 123 to contact the first metal reflective layer 123 while being in contact with the second dielectric layer. A second metal reflective layer 124 formed on the 122 may be further included.

The second dielectric layer 122 and the second metal reflective layer 124 may employ technical features of the first dielectric layer 121 and the first metal reflective layer 123.

For example, the material of the second dielectric layer 122 may include SiO 2 , Al 2 O 3 , SiN x , TiO 2 , and the like, and the thickness of the second dielectric layer 122 may include light emitted from the active layer. It may be λ / 4n with respect to the wavelength λ, but is not limited thereto.

Meanwhile, as shown in FIG. 3, in the light emitting device 103 according to the third embodiment, the second dielectric layer 122a may include a plurality of second dielectric patterns P2 spaced apart from each other.

As shown in the third embodiment, when a plurality of dielectric layers are disposed, there is an effect of changing the path of light that can be absorbed by the metal reflective layer so that it can be extracted through reflection to the outside.

In addition, according to the third embodiment, since the second dielectric layer 122a includes a plurality of second dielectric patterns P2 spaced apart from each other, the ratio of light extracted to the outside through diffraction with respect to the light emitted from the active layer is significantly increased. It can increase.

The second metal reflective layer 124 may be formed of a metal layer including Al, Ag, or an alloy containing Al or Ag, but is not limited thereto.

The second ohmic contact portion 124a may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), and indium IGTO (IGTO). gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, Ni / IrOx / Au / ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, It may be formed including at least one of Hf, but is not limited to such materials.

The embodiment may include a first electrode 140 on the first conductivity-type semiconductor layer 112 exposed by mesa etching and a second electrode 130 on the reflective layer 120.

According to the embodiment, the ohmic contact portion through which the light emitting structure and the metal reflective layer are electrically connected to the dielectric layer may be provided to improve external light extraction efficiency and to effectively form an ohmic electrode between the semiconductor light emitting structure and the reflector.

Further, according to the embodiment, by employing a current diffusion layer, an electron injection layer, a strain control layer, an electron blocking layer, etc., the reliability of the light emitting device can be improved to provide a light emitting device with high efficiency. Description of each configuration will be described in detail in the description of the manufacturing method.

7 is a view illustrating a light emitting device package 200 having a light emitting device according to embodiments.

The light emitting device package 200 according to the embodiment may include a package body 205, a third electrode layer 213 and a fourth electrode layer 214 installed on the package body 205, and the package body 205. The light emitting device 100 is installed at and electrically connected to the third electrode layer 213 and the fourth electrode layer 214, and a molding member 230 surrounding the light emitting device 100 is included.

The package body 205 may include a silicon material, a synthetic resin material, or a metal material, and an inclined surface may be formed around the light emitting device 100.

The third electrode layer 213 and the fourth electrode layer 214 are electrically isolated from each other and provide power to the light emitting device 100. The third electrode layer 213 and the fourth electrode layer 214 may function to increase light efficiency by reflecting the light generated from the light emitting device 100, And may serve to discharge heat to the outside.

The light emitting device 100 may be a horizontal type light emitting device illustrated in FIG. 1, but is not limited thereto. A horizontal light emitting device may also be applied.

The light emitting device 100 may be installed on the package body 205 or on the third electrode layer 213 or the fourth electrode layer 214.

The light emitting device 100 may be electrically connected to the third electrode layer 213 and / or the fourth electrode layer 214 by a wire, flip chip, or die bonding method. In the exemplary embodiment, the light emitting device 100 is electrically connected to the third electrode layer 213 and the fourth electrode layer 214 through a wire, but is not limited thereto.

The molding member 230 may surround the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 230 may include a phosphor 232 to change the wavelength of the light emitted from the light emitting device 100.

A plurality of light emitting device packages according to the embodiment may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, a fluorescent sheet, or the like, which is an optical member, may be disposed on a path of light emitted from the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a backlight unit or function as a lighting unit. For example, the lighting system may include a backlight unit, a lighting unit, a pointing device, a lamp, and a streetlight.

8 is a perspective view 1100 of a lighting unit according to an embodiment. However, the lighting unit 1100 of FIG. 8 is an example of a lighting system, but is not limited thereto.

In the embodiment, the lighting unit 1100 is connected to the case body 1110, the light emitting module unit 1130 installed on the case body 1110, and the case body 1110 and receive power from an external power source. It may include a terminal 1120.

The case body 1110 may be formed of a material having good heat dissipation characteristics. For example, the case body 1110 may be formed of a metal material or a resin material.

The light emitting module unit 1130 may include a substrate 1132 and at least one light emitting device package 200 mounted on the substrate 1132.

The substrate 1132 may be a circuit pattern printed on an insulator, and for example, a general printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, and the like. It may include.

In addition, the substrate 1132 may be formed of a material that reflects light efficiently, or the surface may be formed of a color that reflects light efficiently, for example, white, silver, or the like.

The at least one light emitting device package 200 may be mounted on the substrate 1132. Each of the light emitting device packages 200 may include at least one light emitting diode (LED) 100. The light emitting diodes 100 may include colored light emitting diodes emitting red, green, blue, or white colored light, and UV light emitting diodes emitting ultraviolet (UV) light.

The light emitting module unit 1130 may be disposed to have a combination of various light emitting device packages 200 to obtain color and luminance. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be combined to secure high color rendering (CRI).

The connection terminal 1120 may be electrically connected to the light emitting module unit 1130 to supply power. In an embodiment, the connection terminal 1120 is coupled to the external power source by a socket, but is not limited thereto. For example, the connection terminal 1120 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by a wire.

9 is an exploded perspective view 1200 of a backlight unit according to an embodiment. However, the backlight unit 1200 of FIG. 9 is an example of an illumination system, but is not limited thereto.

The backlight unit 1200 according to the embodiment includes a light guide plate 1210, a light emitting module unit 1240 that provides light to the light guide plate 1210, a reflective member 1220 under the light guide plate 1210, and the light guide plate. 1210, a bottom cover 1230 for accommodating the light emitting module unit 1240 and the reflective member 1220, but is not limited thereto.

The light guide plate 1210 serves to surface light by diffusing light. The light guide plate 1210 is made of a transparent material, for example, an acrylic resin series such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN). It may include one of the resins.

The light emitting module unit 1240 provides light to at least one side of the light guide plate 1210 and ultimately serves as a light source of a display device in which the backlight unit is installed.

The light emitting module unit 1240 may be in contact with the light guide plate 1210, but is not limited thereto. Specifically, the light emitting module 1240 includes a substrate 1242 and a plurality of light emitting device packages 200 mounted on the substrate 1242. The substrate 1242 is mounted on the light guide plate 1210, But is not limited to.

The substrate 1242 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the substrate 1242 may include not only a general PCB, but also a metal core PCB (MCPCB), a flexible PCB (FPCB), and the like.

The plurality of light emitting device packages 200 may be mounted on the substrate 1242 such that a light emitting surface on which light is emitted is spaced apart from the light guide plate 1210 by a predetermined distance.

The reflective member 1220 may be formed under the light guide plate 1210. The reflection member 1220 reflects the light incident on the lower surface of the light guide plate 1210 so as to face upward, thereby improving the brightness of the backlight unit. The reflective member 1220 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto.

The bottom cover 1230 may accommodate the light guide plate 1210, the light emitting module unit 1240, the reflective member 1220, and the like. For this purpose, the bottom cover 1230 may be formed in a box shape having an opened upper surface, but the present invention is not limited thereto.

The bottom cover 1230 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding.

The embodiment can provide a light emitting device having improved light extraction efficiency, a manufacturing method of a light emitting device, a light emitting device package, and an illumination system.

In addition, according to the embodiment can provide a high efficiency light emitting device, a manufacturing method of the light emitting device, a light emitting device package and an illumination system.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in each embodiment may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Accordingly, the contents of such combinations and modifications should be construed as being included in the scope of the embodiments.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. It can be seen that the modification and application of branches are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

Claims (6)

A first conductive semiconductor layer;
An active layer on the first conductivity type semiconductor layer;
A second conductive semiconductor layer on the active layer;
A first dielectric layer formed on a portion of the second conductive semiconductor layer;
And a first metal reflective layer formed on the first dielectric layer while having a first ohmic contact portion and in contact with the second conductive semiconductor layer. The method according to claim 1,
A second dielectric layer formed on the first metal reflective layer; And
And a second metal reflecting layer provided on the second dielectric layer while having a second ohmic contact portion in contact with the first metal reflecting layer. 3. The method according to claim 1 or 2,
Wherein the first dielectric layer comprises:
A light emitting device comprising a plurality of first dielectric patterns spaced apart. 3. The method according to claim 1 or 2,
The first metal reflective layer
A light emitting device in contact with the second conductive semiconductor layer exposed between the first dielectric pattern. The method of claim 2,
The second dielectric layer is,
A light emitting device comprising a plurality of second dielectric patterns spaced apart. The method according to claim 1,
The region in which the first dielectric layer is in contact with the second conductive semiconductor layer occupies 90% to 95% of the upper surface of the second conductive semiconductor layer.
KR1020110081344A 2011-08-16 2011-08-16 Light emitting device KR20130019277A (en)

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