KR20130012291A - 3-dimensional aligned nanostructure prepared by both imprint lithography and lift-off processes, and method of manufacturing for the same - Google Patents

Abstract

PURPOSE: A 3-dimensional aligned nanostructure prepared by both imprint lithography and lift-off processes is provided to have a uniform size, various shape and constant arrangement by controlling the ratio of dry etching. CONSTITUTION: A manufacturing method a 3-dimensional aligned nanostructure comprises: a step of forming a polymer layer(102) on a substrate(101); a step of forming a photosensitive metal-organic material precursor layer on the upper part of the polymer layer; a step of preparing an imprint stamp; a step of pressurizing the photosensitive metal-organic precursor layer by the imprint stamp; and a step of forming a metal oxide thin-film pattern(105)by hardening the metal-organic precursor layer; a step of removing the imprint stamp from the metal oxide thin film pattern; a step of forming an undercut(106) by etching the polymer layer; a step of forming a metal oxide film(107); and a step of lift-offing the metal oxide thin film pattern and etching the polymer layer with an under cut.

Description

3-Dimensional Aligned Nanostructure Prepared by Both Imprint Lithography and Lift-Off Processes, and Method of Manufacturing for the Same}

The present invention relates to a nanostructure having a three-dimensional structure and a method for manufacturing the same, and more particularly, by forming a polymer layer and a patterned photosensitive metal-organic precursor layer on a substrate or a thin film, the undercut may be etched according to the etching selectivity of the thin film. 3D structure alignment using an imprint lithography and a lift-off process to form a 3D structure nanostructure by forming an undercut and controlling the rotation of a substrate during deposition of a metal or metal oxide film for manufacturing a 3D structure nanostructure It relates to a nanostructure and a method of manufacturing the same.

Recently, according to the trend of high integration and miniaturization of electronic devices, researches on nanostructures and manufacturing methods thereof are being actively conducted. In general, nanostructures consist of particles of several nm size, have optical, magnetic, and electrical properties, and exhibit different properties depending on the size of the particles. Thus, a single electron device, a photonic crystal, a patterned magnetic storage device, an electrochemical sensor, a biological sensor Application to back is possible. In general, nanostructures are manufactured by deposition, patterning and etching processes of thin films.

Korean Patent Laid-Open Publication No. 10-2009-0039278 relates to a semiconductor device using a nano dot and a method of manufacturing the same. The nano dot layer is formed using a material such as germanium to form a floating gate, thereby improving the characteristics of the device. The present invention relates to a semiconductor device and a manufacturing method using nano dots. However, this technique is difficult to control the etching selectivity because it forms a thin film in the same series. In addition, in order to form a nanostructure having a three-dimensional structure, a plurality of oxide thin films and nano-dot layers must be deposited, and because the deposition and etching processes are repeatedly performed, the process time is long and the productivity is low.

Korean Patent No. 10-0907473 is a technique for forming a silicide nanodot and a laminate structure for forming a silicide nano dot. This technique is to prepare a laminate structure having at least one interface composed of a metal layer and a silicon layer containing oxygen on a substrate, and irradiate an electron beam on the laminate to form silicide nanodots on the interface. However, this technique does not control the etch selectivity of the stacked structures for forming nanostructures by forming one stacked structure on the substrate. In addition, by forming the nanostructures on the interface of the laminated structure, it is difficult to produce nanostructures of uniform size and various shapes, it is impossible to uniform arrangement of the nanostructures.

The present invention is to solve the above-described problems, it is possible to control the selection ratio of the multi-layer structure for forming the nanostructure of the three-dimensional structure, three-dimensional using imprint lithography and lift-off process capable of various shapes, sizes and patterns An object of the present invention is to provide an ordered nanostructure of the structure and a method of manufacturing the same.

Furthermore, an aligned nanostructure of a three-dimensional structure using imprint lithography and a lift-off process, which can prevent adhesion or deformation when forming the three-dimensional nanostructure on a substrate, and form and arrange uniform nanostructures, and a method of manufacturing the same For the purpose of providing it.

In order to achieve the above object, a method of manufacturing an aligned nanostructure having a three-dimensional structure using an imprint lithography and a lift-off process according to the present invention uses an imprint lithography process and a lift-off process. In the method of manufacturing a metal or metal oxide nanostructure of the three-dimensional form, the step of forming a polymer layer on the substrate, a step of forming a photosensitive metal-organic precursor layer on the polymer layer, the multi-level pattern Preparing the formed imprint stamp, pressurizing the photosensitive metal-organic precursor layer with an imprint stamp, and using the photosensitive metal-organic precursor layer by any one of a heating or light irradiation method or a mixed method. Hardening to form a metal oxide thin film pattern, and the imprint stamp is cracked. Removing from the thin oxide thin film pattern, etching the polymer layer under the metal oxide thin film pattern by dry etching to form an undercut to expose the substrate, and forming an undercut on the metal oxide thin film pattern or on the exposed substrate. Forming a metal or metal oxide film using a beam evaporator; and lifting a metal oxide thin film pattern using a solvent, and obtaining a nanostructure by etching the polymer layer on which the undercut is formed.

Furthermore, the aligned nanostructure of the three-dimensional structure using the imprint lithography and the lift-off process according to the present invention is formed of a substrate made of an insulating material or a polymer and a concave-convex structure made of a metal or a metal oxide film on a portion of the substrate. Nanostructures.

As described above, the present invention provides a three-dimensional structure for forming nanostructures. By forming a polymer layer on the substrate as a laminate structure and forming a patterned photosensitive metal-organic precursor layer on the polymer layer, the etching selectivity for dry etching can be controlled. Therefore, it is possible to form an undercut in which a lift-off process is easy.

By forming an undercut in the polymer layer under the patterned metal oxide thin film pattern, using the metal oxide thin film as a mask, and controlling the rotational force of the electron beam evaporator, nanostructures of uniform size and various shapes can be manufactured. And a uniform arrangement of nanostructures is possible.

1A to 1H illustrate a method of manufacturing an aligned nanostructure having a three-dimensional structure using imprint lithography and a lift-off process according to an embodiment of the present invention.
FIG. 2 is an SEM image illustrating a fabrication process of an aligned nanostructure having a three-dimensional structure using imprint lithography and a lift-off process according to an embodiment of the present invention.
FIG. 3 is an SEM image illustrating a fabrication process of an aligned nanostructure having a three-dimensional structure using imprint lithography and a lift-off process according to another exemplary embodiment of the present invention.
FIG. 4 is an SEM image showing aligned nanostructures of three-dimensional structure using imprint lithography and a lift-off process according to an embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Prior to this, terms or words used in the specification and claims should not be construed as having a conventional or dictionary meaning, and the inventors should properly explain the concept of terms in order to best explain their own invention. It should be interpreted as meanings and concepts corresponding to the technical idea of the present invention based on the principle of definition.

Therefore, the embodiments described in this specification and the configurations shown in the drawings are merely the most preferred embodiments of the present invention and do not represent all the technical ideas of the present invention. Therefore, It is to be understood that equivalents and modifications are possible.

1A to 1H illustrate a method of manufacturing an aligned nanostructure having a three-dimensional structure using imprint lithography and a lift-off process according to an embodiment of the present invention. As shown in the drawing, a method of manufacturing an aligned nanostructure having a three-dimensional structure by using an imprint lithography and a lift-off process is a three-dimensional form using an imprint lithography process and a lift-off process. In the method of manufacturing a metal or metal oxide nanostructure of the step, forming a polymer layer on the substrate (s101), forming a photosensitive metal-organic precursor layer on the polymer layer (s102), multi-level pattern (Multi-Level Preparing an imprint stamp having a pattern formed thereon (s103), pressing the photosensitive metal-organic precursor layer with an imprint stamp, and using either a heating or light irradiation method or a mixed method. Curing the photosensitive metal-organic precursor layer to form a metal oxide thin film pattern (s104), and using an imprint stamp Removing from the thin oxide thin film pattern (s105), etching the polymer layer under the metal oxide thin film pattern by dry etching, and forming an undercut to expose the substrate (s106), on top of the metal oxide thin film pattern, or Forming a metal or metal oxide film on the exposed substrate using an electron beam evaporator (s107), the metal oxide thin film pattern is lifted off (Lift-Off) using a solvent, and the undercut is formed to etch the polymer layer Obtaining the nanostructures (s108).

As shown in Figure 1a, the step of forming a polymer layer on the substrate (s101) is silicon (Si), gallium arsenide (GaAs), gallium phosphide (GaP), gallium arsenide (GaAsP), SiC, GaN, silica, Coating or depositing the polymer layer 102 on any one of the sapphire, quartz, and glass substrates 101. In addition, the substrate 101 may be made of one or more materials of Al, TiN, Cu, Ni, Au, W, or Ti. The polymer layer 102 may be formed of polyvinyl chloride (PVC), neoprene, polyvinyl alcohol (PVA), polymethyl meta acrylate (PMMA), polybenzyl meta acrylate (PBMA), polystylene, spin on glass (SOG), polydimethylsiloxane (PDMS), Polyvinyl formal (PVFM), Parylene, Polyester, Epoxy, Polyether, Polyimide or LOR.

In addition, the polymer layer 102 is formed to have a thickness of 50nm to 1000nm, after spin coating the polymer material on the substrate 101 (Spin Coating), 30 seconds ~ at a temperature of 100 ℃ ~ 200 ℃ It is formed by heat treatment for 500 seconds. The present invention is not limited thereto, and conditions for deposition or coating may be differently set according to the type and thickness of the substrate 101 or the polymer material. In addition, the deposition or coating of the polymer layer 102 may be performed by thermal vapor deposition, chemical vapor deposition (CVD), sputtering, plasma-enhanced chemical vapor deposition (PECVD), or spin coating. ) Or by E-beam Evaportor.

As shown in FIG. 1B, forming the photosensitive metal-organic precursor layer on the polymer layer (S102) may be performed by using the photosensitive metal-organic precursor layer 103 on the polymer layer 102 described in step S101 of FIG. 1A. Form. Deposition or coating of the photosensitive metal-organic precursor layer 103 is possible by various methods used for the deposition or coating of the polymer layer 102.

The photosensitive metal-organic precursor layer 103 is formed of lithium (Li), beryllium (Be), boron (B), sodium (Na), magnesium (Mg), aluminum (Al), silicon (Si), indium (In), Sulfur (S), potassium (K), calcium (Ca), scandium (Sc), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), Nickel (Ni), Copper (Cu), Zinc (Zn), Gallium (Ga), Germanium (Ge), Arsenic (As), Selenium (Se), Rubidium (Rb), Strontium (Sr), Yttrium (Y) , Zirconium (Zr), niobium (Nb), molybdenum (Mo), ruthenium (Ru), rhodium (Rh), indium (In), tin (Sn), tellurium (Te), antimony (Sb), barium ( Ba), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), gadolinium (Gd), hafnium (Hf), tantalum (Ta), tungsten (W), iridium ( It includes any one metal element selected from the group consisting of Ir), lead (Pb), bismuth (Bi), polonium (Po) or uranium (U).

Ethylhexanoate, Acetylacetonate, Dialkyldithiocarbamates, Carboxylic acids, Carboxylates, Pyridine, Diamines ), Arsines, Diarsines, Phosphines, Diphosphines, Butoxide, Butopropoxide, Isopropoxide, Ethoxide, Chloride Acetate, Carbonyl, Carbonate, Hydroxide, Arenas, Beta-Diketonate, 2-Nitrobenzaldihydrate (Acetate) It consists of an organic ligand of any one or more of 2-Nitrobenzaldehyde) or Acetate Dihydrate.

In addition, the photosensitive metal-organic precursor layer 103 may include hexane, 4-methyl-2-pentanone, ketone, methyl isobutyl ketone, methyl ethyl ketone, water, methanol, ethanol, propanol. , Isopropanol, butanol, pentanol, hexanol, dimethyl sulfoxide (Dimethyl Sulfoxide (DMSO), dimethylformamide (DMF), N-methylpyrrolidone, acetone, acetonitrile, tetrahydrofuran (THF) It is produced using at least one solvent selected from the group consisting of, Tecan, nonane, octane, heptane, pentane or 2-methoxyethanol (E-Methoxyethanol).

Photosensitive ZrO ₂ resins may be synthesized for the formation of the photosensitive metal-organic precursor layer 103 according to the present invention. For the synthesis of photosensitive ZrO ₂ resin, Zirconyl 2-ethylhexanoate and hexane are mixed in a predetermined amount. The ZrO ₂ resin is spin coated on the polymer layer 102 formed in step S101 of FIG. 1A, and then heat-treated at a temperature of 50 ° C. to 100 ° C. for 30 seconds to 500 seconds to form a photosensitive metal-organic precursor. Layer 103 may be formed. The present invention is not limited thereto, and SnO ₂ may be synthesized to form the photosensitive metal-organic precursor layer 103, and temperature and heat treatment conditions may be set differently depending on the material to be synthesized.

As illustrated in FIG. 1C, preparing an imprint stamp having a multi-level pattern formed therein (s103) may be performed on the upper surface of the photosensitive metal-organic precursor layer 103 of step s102 of FIG. This step is for forming a pattern (multi-level pattern). Imprint stamp 104 is made of a variety of polymers described in step s101. Imprint Stamp (104) for pattern formation according to the present invention is Pill-Patterned PTFE (PolyTetraFluoroEthylene) Imprint Stamp (104), a silicon master stamp (Hole-Patterned Si Stamp) on top PTFE (PolyTetraFluoroEthylene) resin may be added dropwise, and the PET (PolyEthylene-Terephthalate) substrate may be pressed and then irradiated with ultraviolet rays for 3 minutes.

As shown in FIG. 1D, the photosensitive metal-organic precursor layer is pressed with an imprint stamp, and the photosensitive metal-organic precursor layer is cured by any one of a heating or light irradiation method or a mixed method to oxidize the metal. Forming a thin film pattern (s104) is a multi-stage pattern (I) in the photosensitive metal-organic precursor layer 103 formed in step s102 of Figure 1b using an imprint stamp 104 prepared in step s103 of Figure 1c Form a multi-level pattern). In addition, in step s104, an imprint stamp 104 may be pressed onto the photosensitive metal-organic precursor layer 103, and the photosensitive metal-organic precursor layer may be pressed at a temperature of 30 ° C. to 300 ° C. for 1 second to 5 hours. Heat to cure. The metal oxide thin film pattern 105 is obtained from the cured photosensitive metal-organic precursor layer 103.

In addition, in step s104, the imprint stamp 104 is pressed onto the photosensitive metal-organic precursor layer 103, and any one of microwave, X-ray, gamma-ray, or ultraviolet light is applied for 1 second to 5 hours. May be irradiated to cure the photosensitive metal-organic precursor layer 103.

As described above with reference to FIG. 1B, when ZrO ₂ or SnO ₂ is synthesized to form the photosensitive metal-organic precursor layer 103, the photosensitive metal-organic precursor layer 103 is irradiated with ultraviolet light for 1 to 50 minutes. To cure.

As shown in FIG. 1E, the step S105 of removing the imprint stamp from the metal oxide thin film pattern may include an imprint stamp from the metal oxide thin film pattern 105 formed in step S104 of FIG. 1D. Relief 104. By separating the imprint stamp 104, the depth, shape, or line width of the finally obtained metal oxide thin film pattern 105 is not particularly limited, and may be implemented in various depths, shapes, or line widths. . When ZrO ₂ or SnO ₂ is synthesized to form the photosensitive metal-organic precursor layer 103 as described in FIG. 1B, the thickness of the metal oxide thin film pattern 105 is in a range of 50 nm to 500 nm.

According to an embodiment of the present invention, through the steps s101 to s105 of FIGS. 1A to 1G, a polymer layer is formed on a substrate, and a patterned photosensitive metal-organic precursor layer is formed on the polymer layer to form a metal oxide thin film. By acquiring the pattern, the etching selectivity to dry etching can be adjusted. Therefore, it is possible to form an undercut in which a lift-off process is easy. In addition, it is not necessary to repeatedly deposit or etch for undercut formation or pattern formation, thereby simplifying the production process and reducing production costs.

As shown in Figure 1f, by etching the polymer layer under the metal oxide thin film pattern by dry etching, forming an undercut to expose the substrate (s106) Cl ₂ , HBr, HCl, SF ₆ , CF At least one gas selected from the group consisting of ₄ , CHF ₃ , NF ₃ , O _2, or CFCs (ChloroFluoroCarbons) is used, and at least one inert gas of N ₂ , Ar, or He is further used for etching. During the etching process, the metal oxide thin film pattern 105 serves as a mask, and the polymer layer 102 under the metal oxide thin film pattern 105 is etched to form an undercut. Undercuts formed in step s106 form aligned nanostructures of three-dimensional structure.

As shown in FIG. 1G, the forming of the metal or the metal oxide layer using the electron beam evaporator on the metal oxide thin film pattern or the exposed substrate (s107) may be performed by using an E-Beam Evaporator. A metal or metal oxide film 107 is formed to a thickness of 50 nm to 1000 nm. The present invention is not limited to this, and various examples such as thermal vapor deposition, chemical vapor deposition (CVD), sputtering, plasma-enhanced chemical vapor deposition (PECVD) or spin coating (Spin Coating) The metal oxide film 107 can be formed by the method.

In this case, the metal or metal oxide layer 107 serves as a mask for forming the nanostructure on the substrate 101. When the E-Beam Evaporator is used to deposit the metal or the metal oxide layer 107, the shape or height of the nanostructure 108 formed in the undercut may be adjusted by adjusting the speed or the absence of rotation. .

Accordingly, the present invention forms an undercut 106 in the polymer layer 102 under the patterned metal oxide thin film pattern 105, and uses the metal oxide thin film pattern 105 and the metal oxide film 107 as a mask. By adjusting the rotational force of the electron beam evaporator, nanostructures 108 of uniform size and various shapes can be manufactured, and the arrangement of the nanostructures 108 is possible.

As shown in FIG. 1H, the step of lifting-off the metal oxide thin film pattern using a solvent and etching the polymer layer in which the undercut is formed to acquire nanostructures (s108) is aligned in a three-dimensional structure. In order to obtain the nanostructures, the polymer layer 102 formed in step S101 of FIG. 1A also separates the metal oxide thin film pattern 105 formed in step S107 of FIG. 1G. In this case, the solvent used means various solvents for separating or removing the thin film.

The aligned nanostructures of the three-dimensional structure using the imprint lithography and the lift-off process according to the present invention can be implemented by the manufacturing method described with reference to FIGS. 1A to 1H. In step S101 of FIG. The present invention can be implemented by forming in.

The present invention can synthesize ZrO ₂ or SnO ₂ to form a photosensitive metal-organic precursor layer, as described in step s102 of FIG. 1B. In addition, ZrO ₂ or SnO ₂ Fabrication of the aligned nanostructures 100 of three-dimensional structure using imprint lithography and lift off processes using the synthesized photosensitive-organic precursor layer can be described with reference to the SEM images of FIGS. 2 and 3.

FIG. 2 is an SEM image illustrating a fabrication process of an aligned nanostructure having a three-dimensional structure using imprint lithography and a lift-off process according to an embodiment of the present invention. FIG. 2A is an image in which a pattern is formed on the photosensitive metal-organic precursor layer 103 to which ZrO ₂ is synthesized. In (a), the polymer layer 102 formed on the upper portion of the substrate 101 is spin-coated on the upper portion of the substrate 101, as described in step s101 of FIG. It is formed by baking for a second. In addition, as described in step s102 of FIG. 1B, the photosensitive ZrO ₂ resin is spin coated on the formed polymer layer 102, and then heat-treated at 120 ° C. for 120 seconds to bake the photosensitive metal-organic precursor layer. 103 is formed.

As described in the SEM image of (a), by forming a polymer layer on the substrate and forming a patterned photosensitive metal-organic precursor layer on the polymer layer, it is possible to control the etching selectivity for dry etching. Therefore, it is possible to form an undercut in which a lift-off process is easy.

1C to 1E, the imprint stamp 104 is pressed onto the photosensitive metal-organic precursor layer 103, irradiated with ultraviolet rays for 30 minutes, and then the imprint stamp 104 is separated. Accordingly, a ZrO ₂ thin film having a depth of 253 nm, an upper pattern line width of 273 nm, and a lower pattern line width of 248 nm may be formed on the upper surface of the polymer layer 102 having a thickness of 213 nm.

(b) is an SEM image of the metal oxide thin film pattern 105 etched using O ₂ gas. Etching using O ₂ gas is 20 mTorr, O ₂ 45SCCM flow volume and RF Power 100W. In this condition, the O ₂ gas etching selectivity is 1:20. As a result of etching, the ZrO ₂ thin film is etched by 10 nm, and the polymer layer 102 made of PMMA is etched by all of 213 nm to form an undercut 106.

(c) is an SEM image in which 200 nm of Ni was deposited at 2 Å / s using an E-Beam Evaporator. At this time, 10 nm of Ti is used as an adhesion layer. Deposit.

(d) is an SEM image showing a Ni film patterned by depositing an adhesion layer Ti and Ni, immersing in acetone for 60 seconds, and blowing with nitrogen gas.

As can be seen by referring to the SEM images from (a) to (d), the polymer layer 102 made of PMMA and the photosensitive metal-organic precursor layer 103 made of ZrO ₂ have a high ratio of 1:20 for O ₂ gas. By inducing the etching selectivity, the formation of the undercut 106 and the formation of the nanopatterned Ni thin film are easy.

FIG. 3 is an SEM image illustrating a fabrication process of an aligned nanostructure having a three-dimensional structure using imprint lithography and a lift-off process according to another exemplary embodiment of the present invention. 3A is an image in which a pattern is formed on the photosensitive metal-organic precursor layer 103 to which SnO ₂ is synthesized. In (a ′), the polymer layer 102 formed on the substrate 101 is spin coated on the substrate 101 with PMMA, as described in step S101 of FIG. 1A, and the temperature is 170 ° C. It is formed by baking for 300 seconds. In addition, as described in step s102 of FIG. 1B, after spin-coating the photosensitive SnO ₂ resin on the formed polymer layer 102, the photosensitive metal-organic precursor is heat-treated at a temperature of 80 ° C. for 120 seconds. Form layer 103.

As described in the SEM image of (a ′), the etching selectivity for dry etching can be controlled by forming a polymer layer on the substrate and forming a patterned photosensitive metal-organic precursor layer on the polymer layer. Therefore, it is possible to form an undercut in which a lift-off process is easy.

1A to 1E, the imprint stamp 104 is pressed onto the photosensitive metal-organic precursor layer 103, irradiated with ultraviolet rays for 20 minutes, and then the imprint stamp 104 is applied to the photosensitive metal-organic precursor layer 103. Separate. Thus, the 200 nm thick polymer layer 102 can be formed.

(b ′) is an SEM image of the metal oxide thin film pattern 105 etched using O ₂ gas. Etching using O ₂ gas is 20mTorr pressure, O ₂ 45SCCM flow volume and RF Power 100W. In this condition, the O ₂ gas etching selectivity is 1: 5. As a result of etching, the SnO ₂ thin film is etched at 40 nm, and the polymer layer 102 made of PMMA is etched at all of 200 nm to form an undercut 106.

(c ′) is an SEM image in which 200 nm of Au was deposited at 2 Å / s using an E-Beam Evaporator. At this time, 10 nm of Ti is deposited as an adhesion layer.

(d ′) is an SEM image showing an Au film patterned by depositing an adhesion layer Ti and Au, immersing in acetone for 60 seconds, and blowing with nitrogen gas.

As can be seen by referring to SEM images from (a ′) to (d ′), high O for dry etching with a polymer layer 102 such as PMMA, using metal oxide thin films such as ZrO ₂ and SnO _{2. The} undercut 106 was formed by inducing the etching selectivity, and in the electron beam evaporator, the metal nanostructures patterned in three dimensions by controlling the position and rotation of the sample on which the metal source and the Ni or Au are deposited are present. It can be confirmed that the formation is possible.

FIG. 4 is an SEM image showing aligned nanostructures of three-dimensional structure using imprint lithography and a lift-off process according to an embodiment of the present invention. As shown, the aligned nanostructure 100 of the three-dimensional structure using the imprint lithography and the lift-off process according to the present invention is a substrate 101 made of an insulating material or a polymer and a part of the upper portion of the substrate 101. It includes a nanostructure 108 formed of a concave-convex structure made of a metal or metal oxide film in the region.

As shown in the SEM image of FIG. 4, the nanostructure 108 according to the present invention is controlled by using an electron beam evaporator to adjust the presence or absence of rotation, or a sphere, a point, a tube, a cone, a hemisphere, a polygonal pyramid, a polygonal cylinder, or a cylinder. It can be made in the above shape. In addition, the width of the lower portion contacting the substrate 101 may be wider than the width of the upper portion by the rotational force of the electron beam evaporator, and may be formed in a left-right asymmetrical structure based on the vertical direction. Furthermore, there is no polymer adhesion phenomenon occurring during the etching process, and no polymer remains on one side of the nanostructure.

The terms used throughout the present specification are terms defined in consideration of functions in the embodiments of the present invention, and may be sufficiently modified according to the intention, custom, etc. of the user or the operator, and thus, the definitions of the terms are used throughout the present specification. It should be made based on the contents.

While the invention has been described with reference to the preferred embodiments, which are referred to by the accompanying drawings, it will be apparent that various modifications are possible without departing from the scope of the invention within the scope covered by the claims set forth below from this description. .

100: aligned nanostructures of three-dimensional structure using imprint lithography and lift-off processes
101: substrate
102: polymer layer
103: photosensitive metal-organic precursor layer
104: Imprint Stamp
105: metal oxide thin film pattern
106: Undercut
107: metal oxide film
108: nanostructures

Claims (17)

In the method of manufacturing a metal or metal oxide nanostructure of the three-dimensional form using an imprint lithography process and a lift-off process,
Forming a polymer layer on the substrate;
Forming a photosensitive metal-organic precursor layer on the polymer layer;
Preparing an imprint stamp having a multi-level pattern formed thereon;
Pressing the photosensitive metal-organic precursor layer with the imprint stamp, and curing the photosensitive metal-organic precursor layer by any one of a heating or light irradiation method or a mixed method to form a metal oxide thin film pattern step;
Removing the imprint stamp from the metal oxide thin film pattern;
Etching the polymer layer under the metal oxide thin film pattern by dry etching to form an undercut to expose the substrate;
Forming a metal or metal oxide film on the metal oxide thin film pattern or on the exposed substrate using an electron beam evaporator; and
Lifting off the metal oxide thin film pattern using a solvent and etching the polymer layer in which the undercut is formed to obtain a nanostructure.
Method for producing an aligned nanostructure of the three-dimensional structure using an imprint lithography and lift-off process comprising a. In the method of manufacturing a metal or metal oxide nanostructure of the three-dimensional form using an imprint lithography process and a lift-off process,
Forming a polymer layer on the thin film;
Forming a photosensitive metal-organic precursor layer on the polymer layer;
Preparing an imprint stamp having a multi-level pattern formed thereon;
Pressing the photosensitive metal-organic precursor layer with the imprint stamp, and curing the photosensitive metal-organic precursor layer by any one of a heating or light irradiation method or a mixed method to form a metal oxide thin film pattern step;
Removing the imprint stamp from the metal oxide thin film pattern;
Etching the polymer layer under the metal oxide thin film pattern by dry etching to form an undercut to expose the thin film;
Forming a metal or metal oxide film on the metal oxide thin film pattern or on the exposed thin film by using an electron beam evaporator; and
Lifting off the metal oxide thin film pattern using a solvent and etching the polymer layer in which the undercut is formed to obtain a nanostructure.
Method for producing an aligned nanostructure of the three-dimensional structure using an imprint lithography and lift-off process comprising a. The method according to any one of claims 1 to 2, wherein the polymer layer,
Polyvinyl Chloride (PVC), Neoprene, Polyvinyl Alcohol (PVA), Poly Methyl Meta Acrylate (PMMA), Poly Benzyl Meta Acrylate (PBMA), PolyStylene, Spin On Glass (SOG), Polydimethylsiloxane (PDMS), Poly Vinyl formal (PVFM) , Parylene, Polyester, Epoxy, Polyether, Polyimide, or LOR, characterized in that the three-dimensional structured nanostructure manufacturing method using a lithography and lift-off process, characterized in that consisting of. The method of claim 3, wherein the polymer layer,
Method for producing an aligned nanostructure of a three-dimensional structure using an imprint lithography and a lift-off process, characterized in that formed 50nm ~ 1000nm thickness. The photosensitive metal according to any one of claims 1 to 2, wherein the photosensitive metal-organic precursor layer is pressed with the Imprint Stamp, and the photosensitive metal is used by any one of a heating or light irradiation method or a mixed method. Curing the organic precursor layer to form a metal oxide thin film pattern,
Method for producing an aligned nanostructure of a three-dimensional structure using an imprint lithography and a lift-off process characterized in that for heating the photosensitive metal-organic precursor layer for 1 second to 5 hours at a temperature of 30 ℃ ~ 300 ℃. The photosensitive metal according to any one of claims 1 to 2, wherein the photosensitive metal-organic precursor layer is pressed with the Imprint Stamp, and the photosensitive metal is used by any one of a heating or light irradiation method or a mixed method. Curing the organic precursor layer to form a metal oxide thin film pattern,
Imprint lithography and lift-off process wherein any one of microwave, X-ray, gamma rays or ultraviolet rays is irradiated to the photosensitive metal-organic precursor layer, and the irradiation time is 1 second to 5 hours during the ultraviolet irradiation. Method for producing an aligned nanostructure of the three-dimensional structure using. The photosensitive metal-organic precursor layer according to any one of claims 1 to 2, wherein
Lithium (Li), beryllium (Be), boron (B), sodium (Na), magnesium (Mg), aluminum (Al), silicon (Si), indium (In), sulfur (S), potassium (K), Calcium (Ca), Scandium (Sc), Titanium (Ti), Vanadium (V), Chromium (Cr), Manganese (Mn), Iron (Fe), Cobalt (Co), Nickel (Ni), Copper (Cu), Zinc (Zn), Gallium (Ga), Germanium (Ge), Arsenic (As), Selenium (Se), Rubidium (Rb), Strontium (Sr), Yttrium (Y), Zirconium (Zr), Niobium (Nb) ), Molybdenum (Mo), ruthenium (Ru), rhodium (Rh), indium (In), tin (Sn), tellurium (Te), antimony (Sb), barium (Ba), lanthanum (La), cerium ( Ce), Praseodymium (Pr), Neodymium (Nd), Promethium (Pm), Gadolinium (Gd), Hafnium (Hf), Tantalum (Ta), Tungsten (W), Iridium (Ir), Lead (Pb), Bismuth ( Bi), polonium (Po) or uranium (U) comprising a three-dimensional structure of nanostructures using an imprint lithography and a lift-off process comprising any one of the metal elements selected from the group consisting of. The photosensitive metal-organic precursor layer according to any one of claims 1 to 2, wherein
Ethylhexanoate, Acetylacetonate, Dialkyldithiocarbamates, Carboxylic acids, Carboxylates, Pyridine, Diamines, Arsines, Diarsines, Phosphines, Diphosphines, Butoxide, Isopropoxide, Ethoxide, Chloride, Acetate (Acetate), Carbonyl, Carbonate, Hydroxide, Arenas, Beta-Diketonate, 2-Nitrobenzaldihydr (2- Nitrobenzaldehyde) or acetate dihydrate (Acetate Dihydrate) is a method for producing an aligned nanostructure of three-dimensional structure using an imprint lithography and a lift off process characterized in that the organic ligand. The photosensitive metal-organic precursor layer according to any one of claims 1 to 2, wherein
Hexane, 4-Methyl-2-Pentanone, ketone, methyl isobutyl ketone, methyl ethyl ketone, water, methanol, ethanol, propanol, isopropanol, butanol, pentanol, hexanol, dimethyl Dimethyl Sulfoxide (DMSO), Dimethylformamide (DMF), N-methylpyrrolidone, Acetone, Acetonitrile, Tetrahydrofuran (THF), Tecan, Nonan, Octane, Heptane, Pentane or 2 Method for producing an ordered nanostructure of three-dimensional structure using imprint lithography and lift-off process, characterized in that it is produced using at least one solvent selected from the group consisting of methoxyethanol (E-Methoxyethanol). The dry etching method of claim 1, wherein the dry etching is performed.
Three-dimensional imprint lithography and lift-off process using at least one gas selected from the group consisting of Cl ₂ , HBr, HCl, SF ₆ , CF ₄ , CHF ₃ , NF ₃ , O ₂ or CFCs (ChloroFluoroCarbons) Method for producing an ordered nanostructure of the structure. The method of claim 10, wherein the dry etching,
Method for producing an aligned nanostructure of three-dimensional structure using an imprint lithography and a lift off process, characterized in that it further comprises at least one inert gas of N ₂ , Ar or He. The metal according to any one of claims 1 to 2, wherein the metal or the metal oxide film,
Formed in a thickness of 50nm ~ 1000nm, manufacturing the aligned nanostructure of the three-dimensional structure using the imprint lithography and lift-off process, characterized in that used as a mask of the substrate or thin film when deposited using the electron beam evaporator Way. A substrate made of an inorganic material, a metal oxide, an insulating material or a polymer, and
Nanostructure formed of a concave-convex structure made of a metal or a metal oxide film in a portion of the upper portion of the substrate
Aligned nanostructures of three-dimensional structure using an imprint lithography and lift off process comprising a. The method of claim 13, wherein the nanostructures,
A three-dimensional aligned nanostructure using imprint lithography and a lift-off process comprising a shape of at least one of spheres, points, tubes, cones, hemispheres, polygonal pyramids, polygonal columns or cylinders. The method of claim 13, wherein the nanostructures,
And a three-dimensional structured nanostructure using imprint lithography and a lift-off process, wherein the lower width of the lower surface in contact with the substrate is wider than the upper width. The method of claim 13, wherein the nanostructures,
An aligned nanostructure of three-dimensional structure using imprint lithography and a lift-off process, characterized in that the left and right asymmetric structure with respect to the vertical direction. The method according to any one of claims 13 to 16, wherein the nanostructures,
3. The aligned nanostructure of the three-dimensional structure using imprint lithography and a lift-off process, wherein there is no polymer adhesion phenomenon occurring during an etching process and no polymer remains on one side of the nanostructure.

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