KR101576471B1 - manufacturing method of high power Red Light-Emitting Diodes - Google Patents

Abstract

The present invention relates to a method of manufacturing a high-output red light emitting diode, and more particularly, to a method of manufacturing a red light emitting diode that increases the light extraction efficiency by forming surface irregularities on a nanoscale, comprising: forming a dielectric mask layer on a thin film; A step of forming a polymer layer on an upper layer of the dielectric mask layer, a step of forming a photosensitive metal organic precursor layer on the polymer layer, a step of preparing a stamp for a nanoimprint in which a pillar-type pattern is formed, Forming a metal oxide thin film pattern layer by pressing the photosensitive metal organic precursor layer with a stamp for a nanoimprint having the pillar-type pattern formed thereon, and curing the photosensitive metal organic precursor layer by any one of a light irradiation method and a heating method, The stamp for a nanoimprint, in which the pillar-type pattern is formed, Etching the thin film using the metal oxide thin film pattern layer, the polymer layer, and the dielectric mask layer as a dry etching mask; removing the remaining dielectric mask layer; and removing the removed dielectric layer And forming an electrode pattern on a part of the mask layer region by a lift-off process. The present invention is directed to a method of manufacturing a high-output red light emitting diode. Accordingly, when a red light emitting diode is manufactured, uniform surface irregularities are formed on the surface of a thin film by using a nanoimprinting process and dry etching to induce nano-roughening, There is an advantage of providing a diode.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a manufacturing method of high power red light emitting diodes,

The present invention relates to a method of manufacturing a high-output red light emitting diode. More particularly, the present invention relates to a method of manufacturing a red light emitting diode using nanoimprinting and dry etching to form a uniform surface irregularity on the surface of a thin film, The present invention relates to a method of manufacturing a high-output red light-emitting diode for improving the light extraction efficiency of a red light-emitting diode.

In recent years, there has been an increasing interest in light emitting diodes (LEDs) having good luminous efficiency, low power consumption, and long lamp life.

In general, light emitting diodes are required to improve the light extraction efficiency by using PSS (Patterned Sapphire Substrate) surface processing technology, p-GaN roughness growth technology, PBG (Photonic Band Gap) A technique of inserting a reflective film on the surface of the light emitting diode,

The present invention relates to a method of forming a concavo-convex pattern on the uppermost layer of a light emitting diode element through wet etching, photoresist or dry etching to improve the light extraction efficiency.

Korean Patent No. 10-0735488 relates to a method of manufacturing a gallium nitride-based LED device, in particular, a method of forming an n-type gallium nitride layer, an active layer, a p-type gallium nitride layer and a roughening layer on a substrate in this order, A method of manufacturing a gallium nitride-based LED element in which surface irregularities are formed on a p-type gallium nitride layer by selectively wet-etching the recess-and-groove forming layer with an etching mask, The concave-convex structure is formed by inclination due to the etch-rate difference, and the light extraction efficiency is not improved so much.

In addition, the AlGaInP layer is roughened by mixing at least one of HCl, H ₃ PO ₄ , H ₂ O ₂ , NH ₄ OH and H ₂ O with a wet etching solution, random, and the thin film is not uniformly roughened, resulting in poor light extraction efficiency and low reproducibility.

In order to solve such a problem, the inventor of the present invention has filed a patent application for a method of manufacturing a light emitting diode device using imprint stamp (Registration No. 10-1294000).

This is accomplished by forming an imprint resin on the substrate or thin film and pressing and dry etching the imprint resin layer with an imprint stem comprising a nano irregular pattern formed in either polygonal horn or conical shape, a nano-irregular pattern including a polygonal pyramid or a cone is formed on the n-type semiconductor layer or the p-type semiconductor layer to increase light extraction efficiency.

However, since the prior art uses the imprint resin layer as the dry etching mask layer, the etch selectivity is low and the uniform lubrication can not be achieved, which is insufficient to improve the light extraction efficiency.

The present invention has been made in view of the above-mentioned need, and it is an object of the present invention to provide a method of manufacturing a red light emitting diode, which uses a nanoimprint process and dry etching to form a uniform surface irregularity on the surface of a thin film to induce nano-roughening To thereby improve the light extraction efficiency of the red light emitting diode.

According to an aspect of the present invention, there is provided a method of manufacturing a red light emitting diode, the method comprising: forming a dielectric mask layer on a thin film; forming a dielectric mask layer on the dielectric mask layer; Forming a photosensitive metal organic precursor layer on the polymer layer, preparing a stamp for a nano imprint having a pillar-type pattern formed thereon, forming a photosensitive metal organic precursor layer on the pillar forming a metal oxide thin film pattern layer by pressing the photosensitive metal organic precursor layer with a stamp for a nanoimprint in which a -type pattern is formed, and curing the photosensitive metal organic precursor layer by any one of the light irradiation method and the heating method, A step of removing a stamp for a nanoimprint in which a pattern is formed from the metal oxide thin film pattern layer Etching the thin film using the metal oxide thin film pattern layer, the polymer layer, and the dielectric mask layer as a dry etch mask; removing the remaining dielectric mask layer; And forming an electrode pattern by a lift-off process. The present invention also provides a method of manufacturing a high-output red LED.

Here, in the step of forming the dielectric mask layer, it is preferable that a micropattern is formed in the dielectric mask layer through a photolithography and a dry etching process on the dielectric mask layer, and the step of forming the dielectric mask layer It is preferable to form a photoresist pattern by photolithography on the thin film, deposit a dielectric mask layer thereon, form a micropattern on the dielectric mask layer through a lift-off process by removing the photoresist pattern Do.

It is preferable that the thin film is any one of n-AlGaInP, p-AlGaInP, n-AlInP, p-AlInP, n-GaInP, p-GaInP, n- It is preferable to use any one of SiN _x , SiO ₂ and Si ₃ N ₄ .

The polymer layer may be formed of a material selected from the group consisting of polyvinyl chloride (PVC), neoprene, polyvinyl alcohol (PVA), poly methyl methacrylate (PMMA), polybenzyl methacrylate (PBMA), polystyrene, spin on glass (SOG), polydimethylsiloxane , Polyvinyl formal (PVFM), parylene, polyester, epoxy, polyether, polyimide, and lift-off resist (LOR).

The metal element constituting the metal organic precursor may be at least one selected from the group consisting of Li, Ber, B, Na, Mg, Al, Si, In, S, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Sb, Rb, Sr, (Y), zirconium (Zr), niobium (Nb), molybdenum (Mo), ruthenium (Ru), rhodium (Rh), indium (In), tin (Sn), tellurium (Te) Ba, La, Ce, Pr, Ne, Prommium, Gd, Hafnium, Ta, W, , At least one selected from the group consisting of iridium (Ir), lead (Pb), bismuth (Bi), polonium (Po) and uranium (U)

In addition, the organic ligand constituting the metal organic precursor may be at least one selected from the group consisting of ethylhexanoate, acetylacetonate, dialkyldithiocarbamates, carboxylic acids, carboxylates but are not limited to, carboxylates, pyridines, diamines, arsines, diarsines, phosphines, diphosphines, butoxide, isopropoxide, , Ethoxide, chloride, acetate, carbonyl, carbonate, hydroxide, arenas, beta-diketonate (beta (2-nitrobenzaldehyde), acetate dihydrate, monoethanolamine, and mixtures thereof. The term " monoethanolamine "

The metal organic precursor composition may further contain, as a solvent, hexane, 4-methyl-2-pentanone, ketone, methyl isobutyl ketone, methyl ethyl ketone, water, methanol, ethanol, propanol, isopropanol Such as butanol, pentanol, hexanol, dimethyl sulfoxide (DMSO), dimethylformamide (DMF), N-methylpyrrolidone, acetone, acetonitrile, tetrahydrofuran , Nonane, octane, heptane, pentane, and e-methoxyethanol.

The metal organic precursor layer may be irradiated with light for 1 second to 5 hours, and the metal organic precursor layer may be heated at a temperature of 30 to 300 ° C for 1 to 5 hours .

Further, the dry etching is made of a _{BCl 3, SiCl 4, Cl 2} , HBr, SF 6, CF 4, C 4 F 8, CH 4, CHF 3, NF 3, CFCs (chlorofluorocarbons), H 2 and O ₂ And at least one inert gas selected from the group consisting of N ₂ , Ar, and He is further included in the gas.

According to the present invention, by using a nanoimprinting process and a dry etching process in manufacturing a red light emitting diode, uniform surface irregularities are formed on the surface of a thin film to induce nano-roughening It is possible to provide a red light emitting diode with improved light extraction efficiency.

1 is a schematic diagram of a method of manufacturing a red light emitting diode according to an embodiment of the present invention;
2 is a schematic and SEM photograph of a red-LED structure in which n-AlGaInP layers are nano-roughened according to one embodiment of the present invention.
3 is a SEM photograph of a nanoimprint pattern using a photosensitive metal organic precursor layer according to an embodiment of the present invention.
4 is a structural schematic diagram (WET-LED) of a red light emitting diode in which an n-AlGaInP layer is rubbed by conventional wet etching.
FIG. 5 is a cross-sectional view showing a conventional technique (a FLAT-LED (a red light emitting diode not having a n-AlGaInP layer rubbed), a WET-LED (a red light emitting diode having an n-AlGaInP layer rubbed by wet etching shown in FIG. Figure 2 is a diagram illustrating the optical output mapping results and histogram graphs of a 2 inch wafer scale for an embodiment of the invention (DRY3-LED).

The present invention relates to a method for manufacturing a red light emitting diode, which comprises forming a uniform surface irregularity on a surface of a thin film by using a nanoimprinting process and dry etching to induce nanoscale roughening, .

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

1 is a schematic view illustrating a method of manufacturing a red light emitting diode according to an embodiment of the present invention.

As shown in the figure, the method of manufacturing a high-power red LED according to the present invention is a method of manufacturing a red light emitting diode that increases the light extraction efficiency by forming surface irregularities on a nanoscale, wherein a dielectric mask layer 100, a polymer layer 200 is formed on the dielectric mask layer 100, a photosensitive metal organic precursor layer 300 is formed on the polymer layer 200, and a pillar-type pattern is formed After the nano imprint stamp 400 is prepared, the photosensitive metal organic precursor layer 300 is pressed with the nanoimprint stamp 400 having the pillar-type pattern formed thereon, The photosensitive metal organic precursor layer 300 is cured to form a metal oxide thin film pattern layer 500. The nanoimprint stamp 400 having the pillar- The thin film 10 is dry-etched using the metal oxide thin film pattern layer 500, the polymer layer 200, and the dielectric mask layer 100 as a dry etching mask, Removing the remaining dielectric mask layer 100 and forming a pattern of the electrodes 600 in a part of the removed dielectric mask layer 100 by a lift-off process.

The thin film 10 uses any one of n-AlGaInP, p-AlGaInP, n-AlInP, p-AlInP, n-GaInP, p-GaInP, n- .

The dielectric mask layer 100 is formed by forming a dielectric mask layer 100 between the thin film 10 and the polymer layer 200 to form a concave-convex pattern on the top surface of the thin film 10 by dry etching , It is possible to control the shape of the unevenness by controlling the etch-rate, and one of SiN _x , SiO _2, and Si ₃ N ₄ is used.

A micropattern 110 may be formed on the dielectric mask layer 100. The dielectric layer 100 is formed on the dielectric mask layer 100 by a photolithography process and a dry etching process, ), Or a photoresist pattern is formed by photolithography. After deposition of the dielectric mask layer 100 on the upper layer, a micro pattern (not shown) is formed on the dielectric mask layer 100 through a lift- The polymer layer 200 may be formed next.

The formation of the micropattern 110 in the dielectric mask layer 100 is for forming n-metal passivation during the dry etching process of the thin film 10, and the electrode 600 is formed.

The polymer layer 200 is formed between the dielectric mask layer 100 and the photosensitive metal organic precursor layer 300 to improve the coating property and the film formability of the photosensitive metal organic precursor layer 300, There is an etching resistance to a dry etching to be described later, and the precision of the nanoimprint pattern is formed.

The polymer layer 200 may be formed of a material selected from the group consisting of polyvinyl chloride (PVC), neoprene, polyvinyl alcohol (PVA), poly methyl methacrylate (PMMA), polybenzyl meta acrylate (BMA), polystyrene, spin on glass ), PVFM (Poly Vinyl formal), Parylene, Polyester, Epoxy, Polyether, Polyimide and LOR (Lift-Off Resist).

The photosensitive metal organic precursor layer 300 is formed on the polymer layer 200. That is, the photosensitive metal organic precursor layer 300 has excellent etching resistance in dry etching with respect to the dry etching gas, Thereby facilitating etching according to the pattern.

The metal element constituting the metal organic precursor may be at least one selected from the group consisting of lithium, beryllium, boron, sodium, magnesium, aluminum, silicon, indium, (S), potassium (K), calcium (Ca), scandium (Sc), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe) , Nickel (Ni), copper (Cu), zinc (Zn), gallium (Ga), germanium (Ge), arsenic (As), selenium (Se), rubidium (Rb), strontium ), Zirconium (Zr), niobium (Nb), molybdenum (Mo), ruthenium (Ru), rhodium (Rh), indium (In), tin (Sn), tellurium (Te), antimony (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), gadolinium (Gd), hafnium (Hf), tantalum (Ta), tungsten (Ir), lead (Pb), bismuth (Bi), polonium (Po) and uranium (U).

In addition, the organic ligand constituting the metal organic precursor may be at least one selected from the group consisting of ethylhexanoate, acetylacetonate, dialkyldithiocarbamates, carboxylic acids, carboxylates but are not limited to, carboxylates, pyridines, diamines, arsines, diarsines, phosphines, diphosphines, butoxide, isopropoxide, , Ethoxide, chloride, acetate, carbonyl, carbonate, hydroxide, arenas, beta-diketonate (beta (2-nitrobenzaldehyde), acetate dihydrate, monoethanolamine, and mixtures thereof. It is preferred that the solvent is selected from the group consisting of 2-nitrobenzaldehyde, 2-nitrobenzaldehyde, acetate dihydrate, monoethanolamine and mixtures thereof.

The metal organic precursor composition may further contain, as a solvent, hexane, 4-methyl-2-pentanone, ketone, methyl isobutyl ketone, methyl ethyl ketone, water, methanol, ethanol, propanol, isopropanol Such as butanol, pentanol, hexanol, dimethyl sulfoxide (DMSO), dimethylformamide (DMF), N-methylpyrrolidone, acetone, acetonitrile, tetrahydrofuran , Nonane, octane, heptane, pentane, and e-methoxyethanol.

The photosensitive metal organic precursor layer 300 is prepared by preparing a nanoimprint stamp 400 having a pillar-type pattern formed thereon, and the photosensitive metal organic precursor layer 300 is formed by a method in which the photosensitive metal organic precursor layer 300 is pressed, Layer 300 is cured to form a metal oxide thin film pattern layer.

The irradiation time of the photosensitive metal organic precursor layer 300 during light (ultraviolet) irradiation is preferably 1 second to 5 hours, the heating temperature in heating the photosensitive metal organic precursor layer is 30 ° C. to 300 ° C., Preferably from 1 second to 5 hours.

At lower values, hardening does not work properly, and at higher values hardening is already done and meaningless.

Next, the stamp 400 for a nanoimprint in which the pillar-type pattern is formed is removed from the metal oxide thin film pattern, and the metal oxide thin film pattern layer 500, the polymer layer 200 and the dielectric mask layer 100 are dry- And the thin film 10 is dry-etched using an etch mask.

The dry etching is performed in a group consisting of BCl ₃ , SiCl ₄ , Cl ₂ , HBr, SF ₆ , CF ₄ , C ₄ F ₈ , CH ₄ , CHF ₃ , NF ₃ , chlorofluorocarbons, H ₂ and O ₂ It is preferable to perform dry etching using at least one selected gas and further include at least one inert gas selected from N ₂ , Ar, and He.

Thereafter, the remaining dielectric mask layer 100 is removed, and a portion of the removed dielectric mask layer 100 is subjected to a lift-off process to form an electrode 600 pattern. Here, when the micropattern is formed in advance in the dielectric mask layer 100, the electrode 600 is formed in this region.

Hereinafter, an embodiment of the present invention will be described in detail. FIG. 1 is a schematic view illustrating a method of manufacturing a red light emitting diode according to an embodiment of the present invention. FIG. 2 is a cross-sectional view of a nano-roughened red FIG. 3 is a SEM photograph of a nanoimprint pattern using a photosensitive metal organic precursor layer 300 according to an embodiment of the present invention, and FIG. 3 4 is a structural schematic diagram (WET-LED) of a red light emitting diode in which an n-AlGaInP layer is rubbed by a conventional wet etching, and FIG. 5 is a cross- (A red light emitting diode with a wet-etched n-AlGaInP layer) and a WET-LED (a red light emitting diode with a wet etch of the n-AlGaInP layer of FIG. 4) Mapping results and histogram graphs (histogram grap hs).

In one embodiment of the present invention, the thin film 10 is for producing a red light emitting diode. The thin film 10 may be 80 nm thick n + GaAs / 300 nm thick n-AlGaInP / 500 nm thick n-AlInP / 700 nm thick multiquantum well / 200 nm thick p-AlInP / 100nm thick p-AlGaInP / 10nm thick p-GaInP / 5000nm thick p-GaP / 100nm thick p ++ GaP / 500nm thick thick Au-In bonding layer / Si substrate was used.

Specifically, a micropatterned photoresist is formed on the thin film 10 by photolithography, 300 nm-thick SiO ₂ is deposited by a PECVD method, and then the patterned photoresist is removed to remove the lift- off process to form the SiO ₂ layer on which the micro pattern 110 is formed. The micropatterned SiO ₂ layer is for n-metal passivation formation in the n-AlGaInP dry etch process as described above.

Then, a SiO ₂ layer is deposited to a thickness of 200 nm and a PMMA is deposited to a thickness of 200 nm on the top of the SiO ₂ layer formed by the micro pattern 110 by PECVD. Then, a nanoimprint pattern is formed using the photosensitive metal organic precursor layer 300 on the upper layer of the PMMA by the nanoimprint process, and the PMMA layer, the SiO ₂ layer, the n + -GaAs layer, and the n-AlGaInP layer are etched through the dry etching process Go ahead.

Thereafter, the remaining SiO ₂ layer is removed, and an AuGe / Au pattern, which is an n-metal electrode 600, is formed in a part of the removed SiO ₂ layer region through a lift-off process. That is, an AuGe / Au pattern, which is the n-metal electrode 600, is formed on the n + -GaAs layer.

Here, when the micro pattern 110 is formed in advance in the dielectric mask layer (SiO ₂ layer), an AuGe / Au pattern, which is an n-metal electrode 600, is formed in the micro pattern 110 region.

FIG. 2 is a schematic and SEM image of a red-LED structure in which n-AlGaInP layers are nano-roughened according to an embodiment of the present invention. As shown in the drawing, a dry etching pattern of nano scales is formed, and an angle between adjacent nano patterns (concave-convex patterns) is 60 °. The shape of a nano pattern is formed perpendicular to the thin film 10, Were not affected.

This is because the angle at which the photon is incident on the thin film 10 and the angle at which the incident light is reflected after the incident angle are increased more than the critical angle to increase the photon emission to the air layer through the nano pattern, .

On the other hand, a stamp 400 for a nanoimprint in which a pillar-type pattern is formed is obtained by dropping a PFPE resin on a silicon master stamp (a hole-type Si stamp having a hole line width of 0.3 m and a hole depth of 200 nm) And then irradiated with ultraviolet rays for 3 minutes to produce a stamp 400 for a PFPE nanoimprint in which a pillar-type pattern was formed.

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In the case of Example 3 (b) using the photosensitive metal organic precursor layer, titanium (VI) (n-butoxide) ₂ (2-ethylhexanoate) ₂ 1.0000 g of [Ti (VI) (n-butoxide) ₂ (2-ethylhexanoate) ₂ , synthesis] and 5.000 g of hexane (Hexane, Aldrich Co., USA) were added and stirred for 24 hours, ₂ < / RTI > Here, titanium (VI) (n-butoxide) ₂ (2-ethylhexanoate) ₂ [Ti (VI), (n-butoxide) ₂ (2-ethylhexanoate) _2] in order to synthesize a titanium (VI) (n 10.5266g of [Ti (VI) (n-butoxide) ₄ , Aldrich Co., USA], 8.7400g of 2-ethylhexanoic acid, Aldrich Co., USA, 15.000g Titanium (VI) (normal-butoxide) ₂ (2-ethylhexanoate) ₂ was synthesized by evaporating and condensing the mixture for 72 hours using a rotary evaporator in a round flask. The resultant photosensitive Ti-organic precursor solution was spin-coated on the top of the micro-patterned SiO ₂ layer (FIG. 1 (b)) under the condition of 3,000 rpm, and the PFPE nanoimprint stamp (B) of the micropatterned SiO ₂ layer (FIG. 1 (b)) by removing the pillar-type patterned PFPE nanoimprint stamp 400 after irradiating ultraviolet rays for 20 minutes after pressing the titanium oxide thin film pattern Thereby forming a layer 500 (Fig. 3 (b)).

Example 3 Using Various Ultraviolet Photosensitive Metal Organic Precursors In the case of FIG. 3 (c), tin (VI) 2-ethylhexanoate [Sn (II) 2-ethylhexanoate, Alfa Aesar Co (USA) and 6.000 g of hexane (Hexanes, Aldrich Co., USA) were mixed and stirred for 24 hours to prepare a 0.21 molar SnO ₂ sol. The photosensitive Sn- After spin coating the upper layer of the SiO ₂ layer (FIG. 1 (b)) with a micro pattern 110 at a speed of 3,000 rpm, the PFPE nanoimprint stamp 400 with the pillar-type pattern formed thereon was pressed, The tin oxide thin film pattern layer 500 was formed on the SiO ₂ layer (FIG. 1 (b)) micropattern 110 by removing the PFPE nanoimprint stamp 400 having the pillar-type pattern after irradiating ultraviolet rays (Fig. 3 (c)).

3 (d), zirconium (VI) 2-ethylhexanoate [Zr (VI) 2-ethylhexanoate, Strem Co.) was used to synthesize a photosensitive Zr-organic precursor solution. , USA) and 10.6749 g of hexane (Hexanes, Aldrich Co., USA) were charged and mixed for 24 hours to prepare a 0.063 molar ZrO ₂ sol. The resulting photosensitive Zr-organic precursor solution was added to the micro Coating the upper layer of the patterned SiO ₂ layer (FIG. 1 (b)) under the condition of 3,000 rpm, pressing the stamp 400 for the PFPE nanoimprint with the illar-type pattern formed thereon, And the stamp 400 for the PFPE nanoimprint with the pillar-type pattern formed thereon was removed to form the zirconium oxide thin film pattern layer 500 on the SiO ₂ (FIG. 1 (b)) micropattern 110 3 (d)).

FIG. 4 is a structural schematic diagram (WET-LED) of a red light emitting diode in which an n-AlGaInP layer is rubbed by a conventional wet etching, and FIG. 5 is a cross- (A red light emitting diode with an n-AlGaInP layer wet-etched in FIG. 4) and an embodiment (DRY3-LED) of the present invention), 2 inch wafer scale light Output mapping results, and histogram graphs.

FIG. 4 is a schematic diagram of a p-AlGaInP / 100nm-thick AlGaInP / 500nm-thick n-AlInP / 700nm-thick multiquantum well / 200nm- thick un- AlInP / 550nm- thick p- / 10 nm thick p-GaInP / 5000 nm-thick p-GaP / 100 nm thick p ++ GaP / 500 nm thick thick Au-In bonding layer / Si substrate using photolithography, After depositing 300 nm-thick SiO ₂ by PECVD, the patterned SiO ₂ layer is formed by a lift-off process by removing the patterned photoresist. For the wet etching, the n + -GaAs layer is removed and the n-AlGaInP layer is wet-roughened by immersing in a solution of H ₃ PO ₄ : HCl: H ₂ O = 5: 1: 2 for 5 minutes. Thereafter, the remaining SiO ₂ layer is removed, and an AuGe / Au pattern as an n-metal electrode 600 is formed through a lift-off process (FIG. 4).

As shown in FIG. 5C, in the case of the present invention (DRY-LED) in which the nanoimprinting process and the dry etching process are performed, it can be seen that uniform high-power LEDs can be manufactured on a 2-inch wafer as a whole. 5 b), it can be seen that the n-AlGaInP exhibits low light output due to non-uniform characteristics during wet etching. The average light output value for all the chips on a 2-inch wafer scale is shown in FIG. 5 d, for a FLAT-LED of 102 mW, for a WET-LED of 140 mW and for a DRY-LED of 172 mW.

In addition, in the case of the average light output for all chips on a 2-inch wafer, the DRY-LED is increased by 22.8% compared to the WET-LED and 68.6% by the FLAT-LED, It was confirmed that the DRY-LED having the etching process can manufacture a high output red LED.

10: thin film 100: dielectric mask layer
110: Micro pattern 200: Polymer layer
300: photosensitive metal organic precursor layer
400: stamp for nanoimprint with pillar-type pattern
500: metal oxide thin film pattern layer
600: electrode

Claims (13)

A method of manufacturing a red light emitting diode, the method comprising: forming a surface irregularity on a nano scale to increase light extraction efficiency,
Forming a dielectric mask layer over the thin film;
Forming a polymer layer on the dielectric mask layer;
Forming a photosensitive metal organic precursor layer on the polymer layer;
Preparing a stamp for a nanoimprint in which a pillar-type pattern is formed;
The photosensitive metal organic precursor layer is pressed with a stamp for nano imprint in which the pillar-type pattern is formed, and the photosensitive metal organic precursor layer is cured by any one of or a combination of light irradiation and heating methods to form a metal oxide thin film pattern layer ;
Removing a stamp for a nanoimprint having the pillar-type pattern formed thereon from the metal oxide thin film pattern layer;
The thin film is dry-etched using the metal oxide thin film pattern layer, the polymer layer, and the dielectric mask layer as a dry etch mask to form a dry etch pattern perpendicular to the substrate and having an angle of 60 degrees between adjacent patterns on the thin film ;
Removing the remaining dielectric mask layer,
Wherein forming the dielectric mask layer comprises:
Forming a micropattern on the dielectric mask layer through a photolithography and a dry etching process on the dielectric mask layer; forming a photoresist pattern by photolithography on the thin film; depositing a dielectric mask layer on the upper layer; Forming a micropattern in the dielectric mask layer through a lift-off process by removing a resist pattern,
And an electrode pattern is formed on the micro pattern by a lift-off process. delete delete The method according to claim 1,
Wherein the thin film is any one of n-AlGaInP, p-AlGaInP, n-AlInP, p-AlInP, n-GaInP, p-GaInP, n-GaP and p-GaP. 2. The semiconductor device according to claim 1,
SiN _x , SiO _2, and Si ₃ N ₄ . The polymer electrolyte fuel cell according to claim 1,
Polyvinyl Chloride (PVC), Neoprene, PVA (Polyvinyl Alcohol), PMMA (Poly Methyl Meta Acrylate), PBMA (Poly Benzyl Meta Acrylate), PolyStylene, SOG (Spin On Glass), PDMS (Polydimethylsiloxane) , Parylene, Polyester, Epoxy, Polyether, Polyimide, and Lift-Off Resist (LOR). The metal organic precursor according to claim 1,
(Li), beryllium (Be), boron (B), sodium (Na), magnesium (Mg), aluminum (Al), silicon (Si), indium (In), sulfur (S) (Ca), Sc, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, (Zn), gallium (Ga), germanium (Ge), arsenic (As), selenium (Se), rubidium (Rb), strontium (Sr), yttrium (Y), zirconium ), Molybdenum (Mo), ruthenium (Ru), rhodium (Rh), indium (In), tin (Sn), tellurium (Te), antimony (Sb), barium (Pr), neodymium (Nd), promethium (Pm), gadolinium (Gd), hafnium (Hf), tantalum (Ta), tungsten (W), iridium (Ir), lead (Pb), bismuth Bi, Po, and U. The method of manufacturing a high-power red LED according to claim 1, The organic electroluminescent device according to claim 1, wherein the organic ligand, which constitutes the metal organic precursor,
But are not limited to, ethylhexanoate, acetylacetonate, dialkyldithiocarbamates, carboxylic acids, carboxylates, pyridine, diamines, But are not limited to, arsines, diarsines, phosphines, diphosphines, butoxide, isopropoxide, ethoxide, chloride, acetate (2-nitrobenzenesulphonyl) acetate, carbonyl, carbonate, hydroxide, arenas, beta-diketonate, 2- nitrobenzaldehyde, acetate dihydrate, monoethanolamine, and mixtures thereof. 2. The method of claim 1, wherein the organic light emitting diode is selected from the group consisting of nitrobenzaldehyde, acetate dihydrate, monoethanolamine, and mixtures thereof. The method according to claim 1,
The metal organic precursor composition may contain, as a solvent, hexane, 4-methyl-2-pentanone, ketone, methyl isobutyl ketone, methyl ethyl ketone, water, methanol, ethanol, propanol, isopropanol, , Dimethyl sulfoxide (DMSO), dimethylformamide (DMF), N-methylpyrrolidone, acetone, acetonitrile, tetrahydrofuran (THF) , Octane, heptane, pentane, and e-methoxyethanol. 2. The method of manufacturing a high-output red light emitting diode according to claim 1, The method according to claim 1,
Wherein the metal organic precursor layer is irradiated with light for 1 second to 5 hours. 2. The method of claim < RTI ID = 0.0 > 1, < / RTI > The method according to claim 1,
Wherein the heating temperature for heating the metal organic precursor layer is from 30 to 300 캜, and the heating time is from 1 second to 5 hours. The dry etching method according to claim 1,
_{BCl 3, SiCl 4, Cl 2} , HBr, SF 6, CF 4, C 4 F 8, CH 4, CHF 3, NF 3, CFCs (chlorofluorocarbons), at least one selected from the group consisting of H ₂ and O ₂ Wherein the dry etching is performed using a gas. 13. The method of claim 12,
Wherein at least one inert gas selected from the group consisting of N ₂ , Ar, and He is further added to the gas for use in the method of manufacturing the high power red light emitting diode.

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