KR20120136209A - Optical device and method of fabricating liquid crystal display device using thereof - Google Patents

Abstract

PURPOSE: An optical device and a fabricating method for a liquid crystal display device using the same are provided to form a pixel electrode by irradiating a conductive layer with beams emitted from a laser. CONSTITUTION: An attenuator(163) controls light intensity which is inputted from a DUV(deep ultraviolet) laser(161) outputting ultraviolet rays. A homogenizer(165), which is controlled by the attenuator, forms uniform light intensity for an entire beam spot. A blade part(167) controls the area of the beam spot of the light which is outputted from the homogenizer. A projection lens(169) enlarges an optical spot which is outputted from the blade part. The DUV laser comprises an ultraviolet laser having an amplitude of about 248 nm.

Description

 Optical device and manufacturing method of liquid crystal display device using the same {OPTICAL DEVICE AND METHOD OF FABRICATING LIQUID CRYSTAL DISPLAY DEVICE USING THEREOF}

The present invention relates to a method for manufacturing a liquid crystal display device, particularly a method for manufacturing a liquid crystal display device using an optical device.

In a flat panel display such as a display device, particularly a liquid crystal display device, each pixel is provided with an active device such as a thin film transistor to drive the display device. The driving method is often referred to as an active matrix driving method. In such an active matrix system, the active elements are arranged in respective pixels arranged in a matrix form to drive the corresponding pixels.

1 is a view showing an active matrix type liquid crystal display element. The liquid crystal display device having the structure shown in the drawing is a thin film transistor liquid crystal display device using a thin film transistor 10 as an active device. As shown in the figure, each pixel of a thin film transistor liquid crystal display device in which N × M pixels are arranged horizontally and horizontally includes a gate line 3 to which a scan signal is applied from an external driving circuit and a data line to which an image signal is applied ( And a thin film transistor 10 formed at the intersection region of 5). The thin film transistor includes a gate electrode 11 connected to the gate line 3, a semiconductor layer 12 formed on the gate electrode 11 and activated when a scan signal is applied to the gate electrode 11, and the semiconductor. It consists of a source electrode 13 and a drain electrode 14 formed on the layer 12. As the semiconductor layer 12 is activated by being connected to the source electrode 13 and the drain electrode 14 in the display area of the pixel, an image signal is applied through the source electrode 13 and the drain electrode 14 so that the liquid crystal is applied. A pixel electrode 16 for operating (not shown) is formed.

FIG. 2 is a cross-sectional view taken along line II ′ of FIG. 1, and the structure of the liquid crystal display device will be described in more detail with reference to the drawing.

As shown in the figure, the thin film transistor 10 is formed on the first substrate 20 made of a transparent material such as glass. The thin film transistor 10 includes a gate electrode 11 formed on the first substrate 20, a gate insulating layer 22 stacked over the entire first substrate 20 on which the gate electrode 11 is formed, and A semiconductor layer 12 formed on the insulating layer 22, a source electrode 13 and a drain electrode 14 formed on the semiconductor layer 12, and a protective layer stacked over the entire first substrate 20 ( passivation layer; The passivation layer 24 includes a pixel electrode 16 connected to the drain electrode 14 of the thin film transistor 10 through a contact hole 26 formed in the passivation layer 24.

On the other hand, the second substrate 30 made of a transparent material such as glass is formed in the region where the thin film transistor 10 is formed or in an image non-display area such as between the pixel and the pixel to prevent light from being transmitted to the image non-display area. A black matrix 32 and a color filter layer 34 formed of red, green, and blue to form actual colors are formed, and the first substrate 20 and the second substrate 30 are bonded to each other, and the liquid crystal is interposed therebetween. The layer 40 is formed to complete the liquid crystal display device.

The liquid crystal display device is mainly manufactured by a complicated process such as a photolithography process using a mask, and a method of manufacturing the liquid crystal display device is illustrated in FIG. 3.

First, as shown in FIG. 3A, a metal layer 11a is formed by stacking metal on the first substrate 20, and then a photosensitive photoresist layer 60a is formed thereon. Although not shown in the figure, the laminated photoresist layer 60a is baked at a constant temperature. Thereafter, when the mask 70 is placed on the photoresist layer 60a, light such as ultraviolet light is irradiated and a developer is applied to the photoresist pattern on the metal layer 11a, as shown in FIG. 3B. 60 is formed. In this case, the photoresist is a negative photoresist, and the region not irradiated with ultraviolet rays is removed by the developer.

Subsequently, when an etchant is applied to the metal layer 11a while a part of the metal layer 11a is blocked by the photoresist pattern 60, as shown in FIG. 3C, the gate electrode 11 is formed on the first substrate 20. ) Is formed.

Thereafter, as shown in FIG. 3D, the gate insulating layer 22 is formed over the entire first substrate 20, and then the semiconductor layer 12a is formed thereon. A photoresist layer 62 is formed on the semiconductor layer 12a by stacking a photoresist layer on the stacked semiconductor layer 12a, placing a mask, irradiating ultraviolet rays, and applying a developer. When the etching solution is applied while the part of the semiconductor layer 12a is blocked by the photoresist pattern 62, the semiconductor layer 12 is formed on the gate electrode 11, as shown in FIG. 3E.

Subsequently, as shown in FIG. 3F, a metal is stacked over the entire first substrate 20, and then a photoresist pattern is formed using a mask, and the metal is etched using the photoresist pattern to form the semiconductor layer 12. The thin film transistor is completed on the first substrate 20 by forming the source electrode 13 and the drain electrode 14.

Meanwhile, as shown in FIG. 3G, a protective layer 24 is stacked on the first substrate 20 on which the source electrode 13 and the drain electrode 14 are formed to protect the thin film transistor. Thereafter, the protective layer 24 on the drain electrode 14 of the thin film transistor is etched by the above photo process (ie, a photoresist process using a mask) to form a contact hole 26.

Subsequently, as shown in FIG. 3H, a transparent material such as indium tin oxide (ITO) is stacked on the protective layer 24 and then etched by a photo process to form the pixel electrode 16 on the protective layer 24. Form. In this case, the pixel electrode 16 is electrically connected to the drain electrode 14 of the thin film transistor through the contact hole 26 formed in the protective layer 24.

In particular, the ITO film used as the pixel electrode is a transparent conductive film and is formed by a sputtering method and is formed through a photolithography process.

3I, after forming the black matrix 32 and the color filter layer 34 on the second substrate 30, the first substrate 20 and the second substrate 30 are bonded to each other. After that, the liquid crystal layer 40 is formed therebetween to complete the liquid crystal display device.

As described above, in the conventional method for manufacturing a liquid crystal display device, an electrode or a semiconductor layer is formed by a photo process using a photoresist. However, the photo process using the photoresist has the following disadvantages.

First, the manufacturing process becomes complicated. As described above, the photoresist pattern is formed through photoresist coating, baking, exposure and development. Therefore, the manufacturing process is complicated. Furthermore, the process becomes more complicated because baking the photoresist requires a soft baking process performed at a specific temperature and a hard baking process performed at a temperature higher than the soft baking temperature.

Second, manufacturing costs will rise. In general, in an electric device process including a plurality of patterns (or electrodes), such as a transistor, a photoresist process is performed to form one pattern, and another photoresist process must be performed to form another pattern. This means that an expensive photoresist process line is required between each pattern line in the manufacturing line. Therefore, the manufacturing cost increases during the manufacture of the electric device. For example, in manufacturing a thin film transistor of a liquid crystal display device, the cost of the photoresist process accounts for about 40 to 45% of the total cost.

Third, it pollutes the environment. In general, since the application of the photoresist is performed by spin coating, many photoresists are discarded during application. The disposal of the photoresist not only increases the manufacturing cost of the electric device but also causes the environment to be contaminated by the discarded photoresist.

Fourth, the failure of electrical appliances. In general, the photoresist layer is applied by spin coating, and it is difficult to control the thickness of the photoresist layer by the spin coating. Therefore, the photoresist layer is formed unevenly, so that non-stripped photoresist remains on the surface of the pattern when the pattern is formed, which causes a defect in the electric device.

Currently, a method for overcoming the above drawbacks by reducing the number of photo processes has been studied. However, there are limitations to substantially reducing the photo process, and in the case of decreasing process, the characteristics of the fabricated liquid crystal display device There was a problem of deterioration.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide an optical device capable of quickly patterning conductive layers by adjusting the spot area of light irradiated to the conductive layers by the blade unit and then ablating the conductive layers. .

Another object of the present invention is to provide a conductive layer patterning method and a liquid crystal display device manufacturing method using the optical device as described above.

In order to achieve the above object, the optical device according to the present invention comprises a laser for emitting light; An attenuator for adjusting the intensity of light emitted from the laser; A spreader which makes the intensity of the light whose intensity is adjusted in the attenuator uniform throughout the spot; And a blade unit that adjusts an area of a beam spot of light input through the spreader.

The blade unit has a window formed in the center; A blade disposed below the main body to block light transmitted through the window; And a motor disposed under the main body to adjust the width of the transmitted light by moving the blade.

In addition, the conductive layer patterning method according to the invention comprises the steps of forming a conductive layer on the substrate; A laser for emitting light on the conductive layer, an attenuator for adjusting the intensity of the light emitted from the laser, a spreader for uniformizing the intensity of the light whose intensity is adjusted by the attenuator throughout the entire spot, and a light input through the Positioning at least one optical device comprising a blade portion for adjusting the beam spot area; Irradiating light to the conductive layer by the optical device.

In addition, the liquid crystal display device manufacturing method according to the present invention comprises the steps of forming a thin film transistor on the first substrate; Forming a protective layer on the first substrate on which the thin film transistor is formed; Forming a conductive layer on the protective layer; A laser for emitting light on the conductive layer on the conductive layer, an attenuator for adjusting the intensity of the light emitted from the laser, a diffuser for uniformizing the intensity of the light whose intensity is adjusted in the attenuator throughout the spot, and the Positioning an optical device including a blade unit for adjusting a beam spot area of light input through the blade unit; And forming a pixel electrode by patterning the conductive layer by irradiating light to the conductive layer by the optical device.

In the present invention, since the pixel electrode is formed by irradiating a beam irradiated from the laser onto the conductive layer, the manufacturing process is simplified and the manufacturing cost can be greatly reduced as compared with the photo process.

In addition, in the present invention, since the spot area of the beam is adjusted by a motor as necessary, patterning of conductive layers having various shapes is possible by one optical device.

1 is a plan view of a conventional liquid crystal display device.
2 is a cross-sectional view of a conventional liquid crystal display device.
3A to 3I illustrate a method of manufacturing a conventional liquid crystal display device.
4 shows an optical device according to the invention.
5 is a view showing a structure of a blade portion of the optical device.
Figures 6a and 6b is a view showing adjusting the spot area of the blade portion by adjusting the spacing between the blades of the blade portion.
7 is a block diagram showing a control unit structure of an optical apparatus according to the present invention.
8 illustrates patterning a conductive layer using a plurality of optics.
9A to 9D are views illustrating a method of manufacturing a liquid crystal display device according to the present invention.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

In the present invention, the pixel electrode of the liquid crystal display device is formed by using a laser ablation technique. As such, the laser ablation technology eliminates the need for a photolithography process using a photomask and photoresist, greatly simplifying the manufacturing process, and enabling relatively fine pixel electrode patterning.

In addition, in the present invention, when the laser ablation is used, the pixel electrode is ablated using the blade unit without using a separate ablation mask. The reason for this is as follows.

Typically, the liquid crystal display device is manufactured in various models. Liquid crystal display devices of various models have different sizes and resolutions. Therefore, since various types of pixel electrodes are formed according to the model, when the ablation mask is used, the ablation mask must be replaced according to each model. Typically, the ablation mask is expensive, so it is manufactured. There was a problem that the process was delayed due to the increase in cost and the time required for model-specific replacement.

However, in the present invention, by using the blade portion for adjusting the spot area of the laser without using the mask for ablation, it is not necessary to replace the mask for ablation according to the model, thereby reducing the manufacturing cost and the process. The delay can be prevented.

4 is an optical device 160 according to the present invention. As shown in FIG. 4, the optical device 160 according to the present invention includes an attenuator 163 for adjusting the intensity of light input from a deep ultraviolet laser (DUV) laser 161 for outputting ultraviolet rays, and the attenuator ( A homogenizer 165 for uniformizing the intensity of the light adjusted by 163 over the entire spot of the beam, a blade portion 167 for adjusting the beam spot area of the light output from the splitter 165; And a projection lens 169 which enlarges and irradiates a spot of light output from the blade unit 167.

The DUV laser 161 is an ultraviolet laser having an amplitude of about 248 nm, and mainly uses an excimer laser, a molecular fluorine gas discharge laser, or the like. The attenuator 163 reduces the intensity of the input light and adjusts the light intensity to an intensity corresponding to the material of the object to be ablation.

The spreader 165 makes the intensity of the light input from the attenuator 163 uniform throughout the beam spot area of the light. Typically, the light emitted from the DUV laser 161 has a greater intensity of the center region of the beam than an intensity of the outer region. The difference in intensity according to the area of the beam is maintained even if it passes through the attenuator 163. The difference in intensity in the beam is maintained when the object corresponding to the center region of the beam is completely melted to absolve the ablation object. On the other hand, the target material in the region corresponding to the outer region of the beam is not completely melted and is not ablated, thus causing a problem that the target material is not ablated to a desired shape.

In order to solve this problem, it is possible to increase the intensity of the beam outer region so that the object of the region is completely melted, but in this case, the intensity of the beam center region is increased so that the object of the region is not only completely melted, Melt to the material of the bad will occur.

However, in the present invention, the uniformity of the light is uniformly spread over the entire beam by the diffuser 165, thereby not only accurately abrogating the object but also preventing damage to the material underneath it.

The functor 165 may be formed in various forms. For example, a plurality of lenses may be formed by gathering a plurality of lenses in a rectangular or circular shape. However, the sterilizer 165 used in the present invention is not limited to the sterilizer having a specific structure. The present invention may be applied to all kinds of currently known types of diffusers as long as the intensity of light can be made uniform.

The blade unit 167 adjusts the beam spot area of the light incident through the splitter 165. As mentioned above, since various types of electrodes such as pixel electrodes are different according to models in liquid crystal display devices of various models, light having beam spot areas of different sizes depending on the model when the electrodes are ablated by a laser. In the present invention, it is possible to abbreviate the electrodes of various models by variously adjusting the beam spot area by the blade unit 167.

The projection lens 169 enlarges the beam spot area of the light having the beam spot area adjusted by the blade unit 167 to an area corresponding to the melting area of the actual object. Since the light emitted from the DUV laser 161 and the beam spot area is adjusted in the blade unit 167 has a smaller beam spot area than the ablation object, the object cannot be ablated at one time. Therefore, the beam spot area of the light input by the projection lens 169 must be increased by the ablation area of the object. In this case, the enlargement ratio of the projection lens 169 may be adjusted according to the beam spot area controlled by the blade unit 167 and the width of the ablation area of the object.

The projection lens 169 may be formed in various forms. For example, the projection lens 169 may be formed in various forms such as by combining a plurality of convex lenses and a concave lens.

5 is a view schematically showing the configuration of the blade unit shown in FIG.

As shown in FIG. 5, the blade unit 167 according to the present invention includes a main body 182 made of metal such as aluminum, a window 183 formed in a central region of the main body 182, and the main body 182. A blade 184 formed at a lower portion of the main body 182 to block a part of the light passing through the window 183 and a motor 186 disposed below the main body 182 to move the blade 184 in a horizontal direction. do.

Since the window 183 is formed at the center of the main body 182, the main body 182 is formed to have a predetermined width on the outer side of the window 183, and a blade 184 is formed at the lower part of the main body 182. The blade 184 is to adjust a beam spot area of the light by blocking a part of the light passing through the window 183, and may be formed of any material as long as the material can block the light, such as a metal.

Although not shown in the drawing, the lower surface of the main body 182 is provided with a guide means such as a guide rail and the blade 184 moves along the guide rail.

Although the blades 184 are arranged along the y-direction of the body 182 in the drawing, the blades 184 may be arranged along the x-direction of the body 182 and along the x- and y-directions. It may be arranged. That is, the blade 184 blocks both or four sides of the light passing through the blade unit 167 so that the light can adjust the beam spot area.

The motor 186 moves the blade 184 along the guide rail. In this case, the motor 186 uses a stepping motor or a servo motor, and moves the blade 184 according to a signal input from the outside to transmit light having a desired beam spot area to the blade unit. It is possible to transmit through 167.

6A and 6B are diagrams illustrating that after the beam spot area of the incident light is adjusted using the blade unit 167, the beam is emitted.

As shown in FIG. 6A, a laser beam having a beam spot area of x1 is operated when the blade 184 of the blade unit 167 is operated to set the distance between the blades 184 on the lower surface of the main body 182 to x2. When transmitted through the transmission portion 183 of the blade portion 167, the light corresponding to (x1-x2) is blocked by the blade portion 167, the beam spot area of the light transmitted through the blade portion 167 is x1 Decreases to x2.

As shown in FIG. 6B, when the blade 184 of the blade unit 167 is operated to move the gap between the blades 184 more narrowly from x2 to x3, light having a beam spot area of x1 is generated. When transmitted, the light corresponding to (x1-x3) is blocked by the blade portion 167 so that the beam spot area of the light passing through the blade portion 167 decreases from x1 to x3. At this time, since the beam spot area x3 is smaller than x2, the beam spot area of the light transmitted through the blade portion 167 is smaller than the beam spot area of the light transmitted through the blade portion in Fig. 6A.

As described above, light whose beam spot area is adjusted by passing through the blade unit 167 is emitted after the beam spot area is enlarged by the projection lens 169. At this time, since the increase in the spot area of the light by the projection lens 169 is the same for all the light according to the ratio of the projection lens 169, the x2 beam passing through the blade portion 167 shown in Figure 6a The light having a spot area or the light having a beam spot area of x3 passing through the blade portion 167 shown in FIG. 6B or the beam spot area is increased at the same ratio so that the light having the desired beam spot area is irradiated onto the object, respectively. will be.

As described above, in the present invention, by adjusting the spacing of the blades 184 of the blade unit 167, it is possible to irradiate an object with light having a desired beam spot area, and the spacing of the blades 184 is controlled by the controller. The structure of such a control is shown in FIG. A method of adjusting the interval of the blades 184 of the blade unit 167 by the controller 190 will be described below.

Although not shown in the drawing, the controller 190 is connected to the motor 186 of the blade unit 167 and outputs a signal to the motor 186 by controlling the operation of the blade 184 of the blade unit 167 blades The spacing of the blades 184 of the section 167 is adjusted.

As illustrated in FIG. 7, the controller 190 may include information on a model of the liquid crystal panel manufactured from the outside, for example, the size of the liquid crystal panel, the size of the pixel, the size of the pixel electrode, the distance between the pixel electrode and the pixel electrode. An input unit 192 for inputting various pieces of information such as an input unit, a beam spot area calculator 194 for determining a beam spot area of a laser beam incident on the transparent conductive layer based on various pieces of information inputted through the input unit 192; And a motor driver 196 for driving the motor 186 to move the blade 184 according to the spot area of the laser beam calculated by the beam spot area calculator 194.

8 illustrates a method of patterning a real metal using the optical device configured as described above.

As shown in FIG. 8, after loading the substrate 174 on which the transparent conductive layer 176 is formed on the table 170, a plurality of optical devices 160a, 160b, and 160c are disposed thereon. Typically, since a plurality of liquid crystal panels are formed on a mother substrate, the plurality of optical devices 160a, 160b, and 160c are disposed to enable the conductive layer 176 of each liquid crystal panel by the corresponding optical devices 160a, 160b, and 160c. To do this. In addition, even when only one liquid crystal panel is formed on the substrate, a plurality of optical devices 160a, 160b, and 160c may be used for the efficiency of ablation.

In addition, although only three optical apparatuses are arrange | positioned in drawing, this is only showing one example. One or two optical devices used in the present invention may be arranged or four or more may be arranged.

The laser 161 is disposed separately from the optical devices 160a, 160b, and 160c. In this case, beam splitters 164a and 164b are disposed on the second optical device 160b and the third optical device 160c disposed at a position proximate to the laser 161 and are farthest from the laser 161. The reflecting mirror 166 is disposed in the first optical device 160a disposed at a distant position. As described above, in the present invention, the reflector 166 and the beam splitters 164a and 164b are disposed to separate and input the beam output from one laser 161 to the plurality of optical devices 160a, 160b and 160c. This will reduce costs and simplify the optical array.

As described above, the light incident on the optical devices 160a, 160b, and 160c is attenuated by the attenuator 163, the diffuser 165, the blade unit 167, and the projection lens 169 inside the optical devices 160a, 160b, and 160c. The transparent conductive layer 176 is irradiated to the transparent conductive layer 176, and the transparent conductive layer 176 in the corresponding region is melted by the light (that is, the laser beam) to pattern the transparent conductive layer 176. At this time, the blade unit 167 disposed in each optical device (160a, 160b, 160c) may be simultaneously controlled by the control unit 190 to irradiate the transparent conductive layer 176 to the beam spot of the same width, respectively, separately It may be controlled to irradiate the transparent conductive layer 176 with beam spots of different widths.

In addition, in the drawing, one laser 161 is installed outside the optical devices 160a, 160b, and 160c, and is applied to the plurality of optical devices 160a, 160b, and 160c by the reflector 166 and the beam splitters 164a and 164b. Although light is supplied, a plurality of lasers may be provided to supply light to each of the optical devices 160a, 160b, and 160c. In addition, it may be provided with its own laser inside the optical device (160a, 160b, 160c).

In the above description, the ablation by the laser 161 is described as a transparent conductive layer such as ITO or IZO. However, the present invention is not limited to this transparent conductive layer but may be applied to an opaque metal layer. In this regard, the liquid crystal display device patterned by the optical device of the present invention is not limited to the pixel electrode but may be applied to various electrodes made of an opaque metal.

Hereinafter, a method of manufacturing an actual liquid crystal display device using the optical device as described above will be described in detail.

9A to 9D illustrate a method of manufacturing a liquid crystal display device according to the present invention.

First, as illustrated in FIG. 9A, a metal layer is laminated and etched on a first substrate 220 made of a transparent material such as glass to form a gate electrode 211, and then the first substrate 220 is formed. The gate insulating layer 222 is formed throughout. Subsequently, a semiconductor layer 212 is formed on the gate insulating layer 222, and then a source electrode 213 and a drain electrode 214 are formed thereon.

Thereafter, the protective layer 224 is formed over the entire first substrate 220 on which the source electrode 213 and the drain electrode 214 are formed, and then a portion of the region is removed to expose the drain electrode 214 to the outside. The contact hole 226 is formed.

Subsequently, as illustrated in FIG. 9B, a transparent conductive layer 216a such as ITO or IZO is formed over the protective layer 224.

Thereafter, as shown in FIG. 9C, the laser 161 and the optical device 160 having the structure shown in FIG. 4 are disposed on the transparent conductive layer 216a, and then a laser beam is applied to the transparent conductive layer 216a. Fire. As the laser beam is irradiated, the transparent conductive layer 216a is melted to form a pixel electrode 216. Since the melting range of the transparent conductive layer 216a varies according to the beam spot area of the laser beam, the area of the beam spot is The pixel electrode 216 is formed at predetermined intervals from the adjacent pixels by adjusting.

Subsequently, as shown in FIG. 9D, after forming the black matrix 232 and the color filter layer 234 on the second substrate 230, the first substrate 220 and the second substrate 230 are bonded together. After that, the liquid crystal layer 240 is formed therebetween to complete the liquid crystal display device.

As described above, in the present invention, since the pixel electrode is formed by ablating the transparent conductive layer with a laser beam, the photo process such as application, exposure, development, etc. of the photoresist is not necessary, thereby simplifying the manufacturing process and reducing the manufacturing cost. In this way, it is not necessary to discharge the chemicals such as the developer, so that environmental pollution can be prevented.

Meanwhile, although only a specific structure, that is, a twisted nematic (TN) mode liquid crystal display device is shown as a liquid crystal display device in the drawings and the above description, the present invention is not limited to the liquid crystal display device in this specific mode, but the common electrode and the pixel. The electrode may be applied to an IPS (In Plane Switching) mode liquid crystal display device or a VA (Vertical Alignment) mode liquid crystal display device in which electrodes are arranged in parallel with each other on the first substrate.

In addition, in the above description, the electrode melted and patterned by a laser is a pixel electrode, but may be used to pattern various metal layers such as a gate line or a data line. In addition, in the case of the IPS mode, it may be used for the patterning of the transparent electrode for removing static electricity formed on the outer surface of the second substrate to remove the static electricity formed in the IPS mode liquid crystal panel.

In addition, although the optical device of a specific structure is used in this invention, the optical device of this invention is not limited only to the optical device of a specific structure. In the present invention, the blade area is provided to adjust the spot area of the laser beam by adjusting the distance between the blades. Therefore, any kind of optical device may be used if such a blade part is provided.

161: laser 163: attenuator
165: a functor 167: blade portion
169: projection lens 182: main body
183: penetrating portion 184: blade
186: motor

Claims (13)

Laser for emitting light;
An attenuator for adjusting the intensity of light emitted from the laser;
A spreader which makes the intensity of the light whose intensity is adjusted in the attenuator uniform throughout the spot; And
And a blade unit configured to adjust an area of a beam spot of light input through the splitter. The method of claim 1, wherein the blade portion,
A main body with a window formed in the center;
A blade disposed below the main body to block light transmitted through the window; And
The optical device, characterized in that formed in the lower portion of the main body to move the blade to adjust the width of the transmitted light. The optical device according to claim 2, further comprising a guide rail on which a blade moves by driving of the motor. The optical device of claim 2, wherein the motor is a stepping motor or a servo motor. The optical device according to claim 1, further comprising a projection lens for increasing the spot area of the light output from the blade portion. Forming a conductive layer on the substrate;
A laser for emitting light on the conductive layer, an attenuator for adjusting the intensity of the light emitted from the laser, a spreader for uniformizing the intensity of the light whose intensity is adjusted by the attenuator throughout the entire spot, and a light input through the Positioning at least one optical device comprising a blade portion for adjusting the beam spot area;
And irradiating light onto the conductive layer by the optical device. The method of claim 6, wherein the blade portion,
A main body with a window formed in the center;
A blade disposed below the main body to block light transmitted through the window; And
The conductive layer patterning method, characterized in that made of a motor disposed on the lower portion of the main body to adjust the width of the transmitted light by moving the blade. 7. The method of claim 6, wherein the optical device comprises a plurality of optical devices disposed on a conductive layer. The conductive layer patterning method of claim 8, wherein the blades of the plurality of optical devices are driven simultaneously so that light having the same beam spot area is irradiated onto the conductive layers in the plurality of optical devices. The conductive layer patterning method of claim 8, wherein the blades of the plurality of optical devices are driven independently so that light having different beam spot areas is irradiated onto the conductive layers in the plurality of optical devices. Forming a thin film transistor on the first substrate;
Forming a protective layer on the first substrate on which the thin film transistor is formed;
Forming a conductive layer on the protective layer;
A laser for emitting light on the conductive layer on the conductive layer, an attenuator for adjusting the intensity of the light emitted from the laser, a diffuser for uniformizing the intensity of the light whose intensity is adjusted in the attenuator throughout the spot, and the Positioning an optical device including a blade unit for adjusting a beam spot area of light input through the blade unit; And
And forming a pixel electrode by irradiating light to the conductive layer by the optical device to pattern the conductive layer. The method of claim 11, wherein the blade portion,
A main body with a window formed in the center;
A blade disposed below the main body to block light transmitted through the window; And
And a motor disposed under the main body to adjust a width of light transmitted by moving the blades. The method of claim 11,
Forming a black matrix and a pixel electrode on the second substrate; And
And forming a liquid crystal layer between the first substrate and the second substrate by bonding the first substrate and the second substrate to each other.

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