KR20120078835A - Apparatus and method for manufacturing of thin film pattern - Google Patents

Abstract

PURPOSE: An apparatus and a method for manufacturing a thin film pattern are provided to simplify a manufacturing process of a thin film pattern by forming a thin film pattern on a substrate through two times of a vapor deposition process. CONSTITUTION: A loadlock chamber(LL) includes at least one of a substrate storage slot and a door for entering. A transfer chamber(TC) sends a kept substrate in the loadlock to each processing chamber(PC). The processing chamber supports the sent substrate from the transfer chamber. The processing chamber forms a thin film pattern on the substrate through a vapor deposition process with a mask. A plurality of mask changing units(MCU) alternately loads a first mask and a second mask to the processing chamber.

Description

Manufacturing apparatus and manufacturing method of a thin film pattern {APPARATUS AND METHOD FOR MANUFACTURING OF THIN FILM PATTERN}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a display device, and more particularly, to a manufacturing apparatus and a manufacturing method of a thin film pattern which can simplify a manufacturing process of a thin film pattern or a thin film transistor and form a fine thin film pattern.

In general, a flat panel display device such as a semiconductor device, a liquid crystal display device, a light emitting display device, or the like includes a thin film pattern to which a signal is supplied and a thin film transistor that is switched in accordance with a switching signal.

The thin film pattern or thin film transistor is formed through a thin film deposition process, a photolithography process and an etching process.

1 is a diagram schematically illustrating a method of manufacturing a general thin film pattern.

Referring to Figure 1 describes a general method of manufacturing a thin film pattern as follows.

First, as shown in FIG. 1A, a thin film layer 20a is deposited on the substrate 10. Here, the thin film layer 20a may be made of metal, organic, or inorganic material.

Then, as shown in FIG. 1B, a photosensitive layer is formed on the entire surface of the thin film layer 20a. Subsequently, the photosensitive layer is selectively removed through a photolithography process to form a mask pattern 30 on a predetermined portion on the thin film layer 20a.

Then, as illustrated in FIG. 1C, the thin film layer 20a is etched through an etching process using the mask pattern 30 as a mask to form the thin film pattern 20 on the substrate 10.

Then, the thin film pattern 20 is finally formed on the substrate 10 by removing the mask pattern 30 formed on the thin film pattern 20.

Such a method of manufacturing a general thin film pattern, and a method of manufacturing a thin film transistor using the same has a problem that a process is complicated due to a thin film deposition process, a photolithography process, and an etching process.

In addition, since a method of manufacturing a general thin film pattern and a method of manufacturing a thin film transistor using the same, a thin film pattern is formed using a mask 40 having a plurality of opening patterns 42 as shown in FIG. 2. When the pattern is miniaturized, there is a limit in forming a fine opening pattern 42 in the mask 40 due to problems such as processing and stretching of the mask 40.

Therefore, a general thin film pattern or a method of manufacturing a thin film transistor has a problem in that a process is complicated and a fine thin film pattern cannot be formed due to a thin film deposition process, a photolithography process, and an etching process.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-described problems, and a technical object of the present invention is to provide a thin film pattern manufacturing apparatus and a method for manufacturing a thin film pattern while simplifying the manufacturing process of the thin film pattern or the thin film transistor. .

According to an aspect of the present invention, there is provided a method of manufacturing a thin film pattern, the method comprising: seating a substrate on a substrate support member installed in a process chamber; And forming a thin film pattern on the substrate through a vapor deposition process of M (where N is a natural number of N or N + 1) using N (where N is a natural number) masks having opening patterns formed to be arranged in a predetermined shape. The thin film pattern is formed by M deposition patterns deposited on the substrate to be connected to each other through the opening patterns of the masks.

The opening patterns may be arranged in a staggered manner so as to be spaced apart by a distance set in a vertical direction and a horizontal direction of the mask.

The opening patterns may include opening patterns of a plurality of first rows formed in the first row of the mask to be spaced apart by a predetermined distance; And an opening pattern of a plurality of second rows formed in a second column of the mask between the first rows of the mask so as to correspond to the opening patterns of the plurality of first rows formed in the first row. .

The M deposition patterns are formed to overlap each other.

The thin film pattern is formed on the substrate by two vapor deposition processes using different first and second masks.

The process of forming a thin film pattern on the substrate may include loading the first mask into the process chamber to align the position of the first mask and the substrate; Forming a first deposition pattern on the substrate corresponding to the opening pattern of the first mask through a vapor deposition process using the first mask; Unloading the first mask in the process chamber; Loading the second mask into the process chamber to align the position of the second mask with the substrate; And forming a second deposition pattern on the substrate corresponding to the opening pattern of the second mask through a vapor deposition process using the second mask, wherein the thin film patterns are overlapped to be connected to each other. It is formed by the first deposition pattern and the second deposition pattern.

The thin film pattern is formed on the substrate by two vapor deposition processes using one mask.

The process of forming a thin film pattern on the substrate may include: aligning positions of the mask and the substrate; Forming a first deposition pattern on the substrate corresponding to the opening pattern of the mask through a vapor deposition process using the mask; Shifting the mask by a predetermined distance to align the position of the second mask with the substrate; And forming a second deposition pattern on the substrate corresponding to the opening pattern of the mask through a vapor deposition process using the shifted mask, wherein the thin film patterns are overlapped to be connected to each other. And a deposition pattern and the second deposition pattern.

The overlapping portion of the first deposition pattern and the second deposition pattern may have a relatively large area.

According to an aspect of the present invention, there is provided an apparatus for manufacturing a thin film pattern, comprising: a substrate support member installed in a process chamber providing a reaction space for performing a vapor deposition process to support a substrate; A mask support member in which N masks having an opening pattern formed to be arranged in a predetermined form, where N is a natural number, are sequentially loaded / unloaded; And a shower head installed on the mask support member and spraying a process gas for forming a thin film pattern on the substrate to the reaction space, wherein the thin film pattern is formed by using M masks. M is formed by M deposition patterns deposited on the substrate to be connected to each other through the opening pattern of each mask according to a vapor deposition process of N + 1 or N).

According to an aspect of the present invention, there is provided a device for manufacturing a thin film pattern, including: a load lock chamber for temporarily storing a substrate; A transfer chamber for transporting the substrate stored in the load lock chamber; On the substrate supplied from the transfer chamber through a vapor deposition process of M (where N is a natural number of N or N + 1) using N (where N is a natural number) masks having an opening pattern formed to be arranged in a predetermined shape. A plurality of process chambers forming a thin film pattern on the substrate; And a mask replacement unit for sequentially loading / unloading the N masks into each of the plurality of process chambers, wherein the thin film pattern is deposited on the substrate to be connected to each other through the opening patterns of the respective masks. It is characterized by being formed by the M deposition patterns.

The M deposition patterns are formed to overlap each other.

Each process chamber may include a substrate support member supporting the substrate; A mask support member for supporting the mask sequentially loaded / unloaded by the mask replacement unit; And a shower head installed on the mask support member and spraying a process gas for forming a thin film pattern on the substrate to the reaction space.

The thin film pattern is formed on the substrate by two vapor deposition processes using different first and second masks.

The mask support member may include a mask support frame supporting the mask; And mask alignment means installed on the mask support frame and aligning the position of the first mask and the substrate or aligning the position of the second mask and the substrate.

According to an aspect of the present invention, there is provided an apparatus for manufacturing a thin film pattern, comprising: a substrate support member installed in a process chamber providing a reaction space for performing a vapor deposition process to support a substrate; A mask having an opening pattern formed to be arranged in a predetermined form; A mask support member which supports the mask and selectively shifts the mask by a predetermined distance; And a shower head installed on the mask support member to inject a process gas for forming a thin film pattern on the substrate into the reaction space, wherein the thin film pattern is i (where i≥ And i deposition patterns deposited on the substrate so as to be connected to each other through the opening pattern of the mask by two vapor deposition processes.

According to an aspect of the present invention, there is provided a device for manufacturing a thin film pattern, including: a load lock chamber for temporarily storing a substrate; A transfer chamber for transporting the substrate stored in the load lock chamber; And a plurality of process chambers for forming a thin film pattern on a substrate supplied from the transfer chamber through i (but a natural number of i≥2) vapor deposition processes using a mask having an opening pattern formed to be arranged in a predetermined shape. The thin film pattern is formed by i deposition patterns deposited on the substrate to be connected to each other through the opening pattern of the mask.

The opening patterns may be arranged in a staggered manner so as to be spaced apart by a distance set in a vertical direction and a horizontal direction of the mask.

The opening patterns may include opening patterns of a plurality of first rows formed in the first row of the mask to be spaced apart by a predetermined distance; And an opening pattern of a plurality of second rows formed in a second column of the mask between the first rows of the mask so as to correspond to the opening patterns of the plurality of first rows formed in the first row. .

The i deposition patterns are formed to overlap each other.

Each process chamber may include a substrate support member supporting the substrate; A mask support member which supports the mask and selectively shifts the mask by a predetermined distance; And a shower head installed on the mask support member and spraying a process gas for forming a thin film pattern on the substrate to the reaction space.

The thin film pattern is formed on the substrate through two vapor deposition processes using one mask.

The mask may include a plurality of first mask alignment units; And a plurality of second mask alignment units spaced apart from each of the plurality of first mask alignment units by the shift distance of the mask.

The mask support member may include a mask support frame supporting the mask; And a position of the mask and the substrate based on the first mask alignment unit, or shifting the mask by a predetermined distance so as to reference the mask and the substrate based on the second mask alignment unit. And mask alignment means for aligning the position.

The apparatus for manufacturing a thin film pattern may further include a plurality of alignment visions installed in the process chamber to capture positions of the mask and the substrate.

As described above, the apparatus and method for manufacturing a thin film pattern according to the present invention have the following effects.

First, by forming a thin film pattern on a substrate through two vapor deposition processes using different first and second masks having staggered opening patterns, the manufacturing process of the thin film pattern can be simplified and the manufacturing of the mask can be easily performed. It is possible to form a complex and fine thin film pattern.

Second, by forming a thin film pattern on the substrate through two vapor deposition processes using one shifted mask, the manufacturing process of the thin film pattern can be simplified, and the fabrication of the mask can be simplified. Can be formed.

1 is a diagram schematically illustrating a method of manufacturing a general thin film pattern.
2 is a view schematically showing a conventional mask.
3 is a perspective view schematically illustrating an apparatus for manufacturing a thin film pattern according to a first embodiment of the present invention.
4A and 4B schematically illustrate the first and second masks that are optionally loaded / unloaded into the process chamber by the mask replacement unit shown in FIG. 3.
FIG. 5 is a view schematically illustrating one process chamber of the plurality of process chambers shown in FIG. 3.
6 is a perspective view schematically illustrating an apparatus for manufacturing a thin film pattern according to a second exemplary embodiment of the present invention.
FIG. 7 is a diagram schematically illustrating any one of the plurality of process chambers illustrated in FIG. 6.
FIG. 8 is a diagram schematically illustrating the mask illustrated in FIG. 7.
9 is a view for explaining a shift of a mask in the apparatus for manufacturing a thin film pattern according to the second embodiment of the present invention.
10A to 10D are diagrams for explaining a method of manufacturing a thin film pattern using a manufacturing apparatus of a thin film pattern according to a first embodiment of the present invention step by step.
11A to 11D are diagrams for explaining a method of manufacturing a thin film pattern using a manufacturing apparatus of a thin film pattern according to a second embodiment of the present invention step by step.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

3 is a perspective view schematically illustrating an apparatus for manufacturing a thin film pattern according to a first embodiment of the present invention.

Referring to FIG. 3, the apparatus for manufacturing a thin film pattern according to the first exemplary embodiment may include a load lock chamber LL, a transfer chamber TC, a plurality of process chambers PC, and a plurality of mask replacement units MCU. It is configured to include).

The load lock chamber LL includes at least one substrate storage slot (not shown) for temporarily storing a substrate supplied from the outside, and a door for entering and exiting the substrate.

The transfer chamber TC is connected to the load lock chamber LL. The transfer chamber TC conveys the substrate stored in the load lock chamber LL to each process chamber PC, or transfers the substrate of each process chamber PC to the load lock chamber LL. It is configured to include (not shown).

Each of the plurality of process chambers PC is installed to be connected to the transfer chamber TC. These process chambers PC support the board | substrate conveyed from the transfer chamber TC, and form a thin film pattern on a board | substrate through the some vapor deposition process using a some mask. Here, the vapor deposition process may be a chemical vapor deposition process (CVD) or a sputtering deposition process, hereinafter, it is assumed that the vapor deposition process is a chemical vapor deposition process (CVD). Such a description of each of the plurality of process chambers PC will be described later.

Each of the plurality of mask replacement units MCU alternately loads the first and second masks 100 and 200 shown in FIGS. 4A and 4B into the process chamber PC. That is, each of the plurality of mask replacement units MCU loads the first mask 100 in the process chamber PC, and then, when the vapor deposition process using the first mask 100 is completed in the process chamber PC, The first mask 100 is unloaded from the process chamber PC, and the second mask 200 is loaded into the process chamber PC.

The first mask 100 is formed of a material such as metal, ceramic, or polymer, and includes a plurality of first opening patterns 110 and a plurality of first mask alignment units 120 formed to be arranged in a predetermined shape. It is composed.

The plurality of first opening patterns 110 are formed through the first mask 100 to have a shape corresponding to the thin film pattern to be formed on the substrate. In this case, each of the plurality of first opening patterns 110 may be spaced apart by a distance set in the vertical direction and the horizontal direction of the first mask 100 (which may or may not be the same according to the separation distance of the thin film patterns to be formed on the substrate). It is arranged in a staggered form. That is, each of the plurality of first opening patterns 110 may include the opening patterns 110a of the plurality of first rows formed in the first row of the first mask 100 to be spaced apart by a predetermined distance, and the plurality of first rows of the first row formed in the first column. A plurality of second rows of opening patterns 110b are formed in a second row between the first rows of the first mask 100 so as to correspond between the opening patterns 110a. In this case, each of the distance A between the adjacent first and second columns and the distance B between the adjacent second and first columns may or may not be the same according to the separation distance of the thin film patterns to be formed on the substrate. .

Meanwhile, both ends of each of the first opening patterns 110 formed in the vertical direction or the column direction are formed to have a relatively large area.

The plurality of first mask alignment units 120 are formed to have shapes such as "+" or "*" at each corner of the first mask 100.

The second mask 200 is formed of a material such as metal, ceramic, or polymer, and includes a plurality of second opening patterns 210 and a plurality of second mask alignment units 220 formed to be arranged in a predetermined shape. It is composed.

The plurality of second opening patterns 210 may have a shape corresponding to the thin film pattern to be formed on the substrate, and may be formed through the second mask 200 so as to correspond between the plurality of first opening patterns 110. . Each of the plurality of second opening patterns 210 is arranged in a staggered manner so as to be spaced apart by a distance set in the vertical direction and the horizontal direction of the second mask 200. That is, each of the plurality of second opening patterns 210 may include the opening patterns 210a of the plurality of first rows formed in the first row of the second mask 200 to be spaced apart by a predetermined distance, and the plurality of first rows of the first row formed in the first column. A plurality of second rows of opening patterns 210b are formed in a second row between the first rows of the second mask 200 so as to correspond between the opening patterns 210a. In this case, each of the distance A between the adjacent first and second columns and the distance B between the adjacent second and first columns may or may not be the same according to the separation distance of the thin film patterns to be formed on the substrate. .

Meanwhile, both ends of each of the second opening patterns 210 formed in the vertical direction or the column direction are formed to have a relatively large area.

The plurality of first and second opening patterns 110 and 210 described above are formed to cross each other in a diagonal direction. That is, each of the plurality of second opening patterns 210 is formed between each of the plurality of first opening patterns 110. Accordingly, when the first and second masks 100 and 200 overlap each other, each of the opening patterns 110a, 210a, 110b, and 210b formed in the first and second columns of the masks 100 and 200 may be formed as one. It becomes an opening pattern for forming a thin film pattern.

The plurality of second mask alignment units 220 are formed to have a shape such as "+" or "*" in each corner portion of the second mask 200.

Meanwhile, when the first and second masks 100 and 200 are overlapped to face each other, the ends of each of the first and second opening patterns 110 and 210 may overlap each other. That is, by the first deposition pattern and the second mask 200 formed by the first mask 100 according to the degree of alignment between the first mask 100 and the substrate and the degree of alignment between the second mask 200 and the substrate. The formed second deposition pattern may be electrically disconnected or the resistance value of the thin film pattern may vary. In order to prevent this problem, ends of each of the first deposition pattern and the second deposition pattern are formed to overlap a predetermined area.

FIG. 5 is a view schematically illustrating one process chamber of the plurality of process chambers shown in FIG. 3.

5 to 3B, the process chamber PC provides a reaction space for the plasma deposition process. The substrate supporting member 310, the shower head 320, the mask supporting member 330, and the plurality of alignment visions 340 are installed in the process chamber PC.

The substrate support member 310 supports the substrate 300 loaded from the transfer chamber TC.

The shower head 320 is installed on the upper part of the process chamber TC so as to communicate with the gas supply pipe 322 penetrating the upper part of the process chamber TC, and the process gas supplied from the gas supply pipe 322 is disposed on the substrate 300. Spray into the reaction space. In addition, the shower head 320 is supplied with high frequency power to form a plasma in the reaction space.

The mask support member 330 is comprised including the mask support frame 332 and the mask aligning means 334 like the enlarged view of FIG.

The mask support frame 332 supports the first mask 100 or the second mask 200 loaded by the mask replacement unit MCU.

The mask aligning means 334 is installed on the mask support frame 332 to align the positions of the masks 100 and 200 supported on the mask support frame 332 and the substrate 300 seated on the substrate support member 310. The positions of the masks 100 and 200 are aligned.

Each of the plurality of alignment visions 340 is installed on the upper outer wall of the process chamber PC so as to correspond to each of the mask alignment units 120 and 220 formed in the first mask 100 or the second mask 200. Each of the plurality of alignment visions 340 is formed on the mask alignment units 120 and 220 and the substrate 300 formed on the first mask 100 or the second mask 200 supported by the mask support member 330. The substrate 300 and the masks 100 and 200 are aligned by imaging the substrate alignment unit (not shown). That is, the mask alignment means 334 aligns the positions of the masks 100 and 200 according to the imaging information picked up by each of the plurality of alignment visions 340 to match the mask alignment units 120 and 220 to the substrate alignment unit. This aligns the substrate 300 and the masks 100 and 200.

As described above, the apparatus for manufacturing a thin film pattern according to the first exemplary embodiment of the present invention mounts the substrate 300 on the substrate support member 310, and then loads the first mask 100 in the process chamber PC. After the first mask 100 and the substrate 300 are aligned, a plasma is formed in the reaction space, and the thin film material passing through the plurality of first opening patterns 110 formed in the first mask 100 is formed on the substrate 300. To form a first deposition pattern of a predetermined type on the substrate 300.

Then, in the apparatus for manufacturing a thin film pattern according to the first embodiment of the present invention, after unloading the first mask 100 in the process chamber PC, the second mask 200 is loaded in the process chamber PC. To align the second mask 200 and the substrate 300, and then form a plasma in the reaction space to pass the thin film material passing through the plurality of second opening patterns 210 formed in the second mask 200. To form a second deposition pattern on the substrate 300. At this time, both ends of each of the second deposition patterns are formed to overlap the ends of the first deposition pattern adjacent up and down.

Accordingly, a plurality of thin film patterns in which each of the plurality of first deposition patterns and the plurality of second deposition patterns are connected to each other are formed on the substrate 300.

The apparatus for manufacturing a thin film pattern according to the first embodiment of the present invention described above is subjected to two vapor deposition processes using different first and second masks 100 and 200 having staggered opening patterns 110 and 210. By forming the thin film pattern TP on the substrate 300, the manufacturing process of the thin film pattern may be simplified.

In addition, the apparatus for manufacturing a thin film pattern according to the first exemplary embodiment of the present invention uses various first and second masks 100 and 200 having an opening pattern for dividing a plurality of thin film patterns to be formed on the substrate 300. By forming the thin film pattern through the vapor deposition process, it is possible to facilitate the fabrication of the mask, and to form a complex and fine thin film pattern.

Meanwhile, in the apparatus for manufacturing a thin film pattern according to the first embodiment of the present invention, the thin film pattern TP is formed on the substrate 300 through two vapor deposition processes using two masks 100 and 200. Although not limited thereto, the vapor deposition process of M times (where N is a natural number of N) using N masks (where N is a natural number of two or more) in which a plurality of opening patterns are arranged in a diagonal direction is provided. The thin film pattern TP may be formed on the substrate 300.

6 is a perspective view schematically illustrating an apparatus for manufacturing a thin film pattern according to a second exemplary embodiment of the present invention.

Referring to FIG. 6, the apparatus for manufacturing a thin film pattern according to the second exemplary embodiment includes a load lock chamber LL, a transfer chamber TC, and a plurality of process chambers PC.

The load lock chamber LL includes at least one substrate storage slot (not shown) for temporarily storing a substrate supplied from the outside, and a door for entering and exiting the substrate.

The transfer chamber TC is connected to the load lock chamber LL. The transfer chamber TC conveys the substrate stored in the load lock chamber LL to each process chamber PC, or transfers the substrate of each process chamber PC to the load lock chamber LL. It is configured to include (not shown).

Each of the plurality of process chambers PC is installed to be connected to the transfer chamber TC to provide a reaction space for the vapor deposition process. These process chambers PC support the board | substrate conveyed from the transfer chamber TC, and form a thin film pattern on a board | substrate through the some vapor deposition process using a mask. To this end, each of the plurality of process chambers PC, as shown in FIG. 7, the substrate support member 410, the shower head 420, the mask 500, the mask support member 430, and the plurality of alignments. Vision 440.

The substrate support member 410 supports the substrate 300 loaded from the transfer chamber TC.

The shower head 420 is installed on the upper part of the process chamber TC so as to communicate with the gas supply pipe 422 penetrating the upper part of the process chamber TC, and supplies the process gas supplied from the gas supply pipe 422 onto the substrate 300. Spray into the reaction space. In addition, the shower head 420 is supplied with high frequency power to form a plasma in the reaction space.

The mask 500 is formed of a material such as a metal, a ceramic, or a polymer so that a thin film material is deposited on the substrate 300 in a predetermined form by a vapor deposition process. To this end, as shown in FIG. 8, the mask 500 includes a plurality of opening patterns 510 and a plurality of first and second mask alignment units 520 and 530 formed at predetermined intervals.

The plurality of opening patterns 510 are formed through the mask 500 to have a shape corresponding to the thin film pattern to be formed on the substrate. In this case, each of the plurality of opening patterns 510 is arranged in a staggered manner so as to be spaced apart by a distance set in the vertical and horizontal directions of the mask 500 (which may or may not be the same according to the separation distance of the thin film patterns to be formed on the substrate). do. That is, each of the plurality of opening patterns 510 may be formed by opening patterns 510a of a plurality of first rows formed in a first row of the mask 500, and opening patterns of a plurality of first rows formed in the first row so as to be spaced apart by a set distance. A plurality of second row opening patterns 510b are formed in a second row between the first row of the mask 500 so as to correspond to the gaps 510a. In this case, each of the distance A between the adjacent first and second columns and the distance B between the adjacent second and first columns may or may not be the same according to the separation distance of the thin film patterns to be formed on the substrate. .

Meanwhile, both ends of each of the opening patterns 510 formed in the vertical direction or the column direction are formed to have a relatively large area.

The plurality of first mask alignment units 520 is formed to have a shape such as "+" or "*" in each corner portion of the mask 500.

The plurality of second mask alignment units 530 may be formed in the form of "+" or "*" so as to be spaced apart from each of the plurality of first mask alignment units 520 at predetermined intervals. In this case, the first mask alignment unit 520 and the second mask alignment unit 530 are spaced apart from each other to correspond to the distance between the opening patterns 510 adjacent in the horizontal direction.

The mask support member 430 is comprised including the mask support frame 432 and the mask alignment means 434 like the enlarged view of FIG.

Mask support frame 432 supports mask 500.

The mask alignment means 434 is installed on the mask support frame 432 to align the mask 500 supported on the mask support frame 432 to the first vapor deposition process position or the second vapor deposition process position. That is, the mask aligning means 434 aligns the positions of the mask 500 based on the plurality of first mask aligning portions 520 formed in the mask 500 during the first vapor deposition process, and thus, the substrate support member 410. The positions of the seated substrate 300 and the mask 500 are aligned. In addition, as shown in FIG. 9, the mask aligning means 434 separates the mask 500 based on the plurality of second mask aligning portions 530 formed in the mask 500 during the second vapor deposition process. In addition, the position of the mask 500 is aligned and the positions of the substrate 300 and the mask 500 are aligned.

Each of the plurality of alignment visions 440 is installed on the upper outer wall of the process chamber PC so as to correspond to each of the plurality of first mask alignment units 520 formed in the mask 500.

Each of the plurality of alignment visions 440 photographs the first mask alignment unit 520 formed on the mask 500 and the substrate alignment unit (not shown) formed on the substrate 300 during the first vapor deposition process. And mask 500 are aligned. Accordingly, the mask alignment means 434 aligns the position of the mask 500 according to the imaging information picked up by each of the plurality of alignment visions 440 to match the first mask alignment portion 520 to the substrate alignment portion. The substrate 300 and the mask 500 are aligned.

In addition, each of the plurality of alignment visions 440 may be formed by photographing the substrate 300 and the mask by imaging the second mask alignment unit 530 formed on the mask 500 and the substrate alignment unit formed on the substrate 300 during the second vapor deposition process. 500) is aligned. Accordingly, the mask alignment means 434 aligns the position of the mask 500 according to the imaging information picked up by each of the plurality of alignment visions 440 to match the second mask alignment portion 530 with the substrate alignment portion. The substrate 300 and the mask 500 are aligned.

As described above, the apparatus for manufacturing a thin film pattern according to the second exemplary embodiment of the present invention mounts the substrate 300 on the substrate support member 410, and then uses the first mask alignment unit 520 of the mask 500 to mask the mask. Aligning the 500 and the substrate 300, and then forming a plasma in the reaction space to deposit a thin film material passing through the plurality of opening patterns 510 formed in the mask 500 on the substrate 300 to deposit the substrate 300. ) Forms a first deposition pattern of a predetermined shape.

Then, the apparatus for manufacturing a thin film pattern according to the second exemplary embodiment of the present invention shifts the mask 500 by a predetermined distance through the mask alignment means 430, and the second mask alignment unit 530 of the mask 500. Align the mask 500 and the substrate 300, and then form a plasma in the reaction space to deposit a thin film material passing through the plurality of opening patterns 510 formed in the mask 500 on the substrate 300. To form a second deposition pattern having a predetermined shape on the substrate 300. At this time, both ends of each of the second deposition patterns are formed to overlap the ends of the first deposition pattern adjacent up and down.

Accordingly, a plurality of thin film patterns in which each of the plurality of first deposition patterns and the plurality of second deposition patterns are connected to each other are formed on the substrate 300.

In the apparatus for manufacturing a thin film pattern according to the second embodiment of the present invention described above, the thin film pattern is formed by forming the thin film pattern TP on the substrate 300 through two vapor deposition processes using one shifted mask 500. The manufacturing process of (TP) can be simplified.

In addition, the thin film pattern manufacturing apparatus according to the second embodiment of the present invention is a thin film through a plurality of vapor deposition process using a mask 500 having an opening pattern for dividing a plurality of thin film patterns to be formed on the substrate 300 By forming the pattern, it is possible to easily manufacture the mask, and to form a complex and fine thin film pattern.

In the meantime, in the apparatus for manufacturing a thin film pattern according to the second embodiment of the present invention, the thin film pattern TP is formed on the substrate 300 through two vapor deposition processes using one mask 500. However, the present invention is not limited thereto, and the thin film pattern TP may be formed on the substrate 300 through i vapor deposition processes (i.e., a natural number of i≥2) using one mask having a plurality of diagonally divided opening patterns. May be formed.

10A to 10D are diagrams for explaining a method of manufacturing a thin film pattern using a manufacturing apparatus of a thin film pattern according to a first embodiment of the present invention step by step.

10A to 10D will be described step by step the manufacturing method of a thin film pattern according to a first embodiment of the present invention with reference to FIG.

First, as shown in FIG. 10A, the substrate 300 is seated on the substrate support member 310 of the process chamber PC, and then the mask support member of the process chamber PC is disposed through the mask replacement unit MCU. After loading the first mask 100 in the 330, a plurality of first mask alignment portions formed in the first mask 100 using the mask alignment means 334 and the alignment vision 340 of the mask support member 330. The first mask 100 and the substrate 300 are aligned by aligning the positions of the substrate alignment unit 302 formed on the 120 and the substrate 300.

Subsequently, as illustrated in FIG. 10B, a thin film material passing through the plurality of first opening patterns 110 formed in the first mask 100 by forming plasma in the reaction space of the process chamber PC may be formed of a substrate 300. ) To form a first deposition pattern DP1 of a predetermined shape on the substrate 300.

Then, as shown in FIG. 10C, after the first mask 100 is unloaded from the process chamber PC through the mask replacement unit MCU, the mask support member 330 of the process chamber PC is unloaded. After loading the second mask 200, the plurality of second mask alignment units 220 and the substrate 300 formed on the second mask 200 using the mask alignment unit 334 and the alignment vision 340 are formed. The second mask 200 and the substrate 300 are aligned by aligning the position of the substrate alignment unit 302.

Subsequently, as shown in FIG. 10D, the thin film material passing through the plurality of second opening patterns 210 formed in the second mask 200 is formed by forming plasma in the reaction space of the process chamber PC. To form a second deposition pattern DP2 of a predetermined shape on the substrate 300. In this case, both ends of each of the second deposition patterns DP2 overlap the ends of the first deposition pattern DP1 adjacent to each other.

Therefore, a plurality of thin film patterns TP are formed on the substrate 300 to which each of the plurality of first deposition patterns DP1 and each of the plurality of second deposition patterns DP2 are connected to each other.

The method of manufacturing the thin film pattern according to the first embodiment of the present invention described above is performed through two vapor deposition processes using different first and second masks 100 and 200 having staggered opening patterns 110 and 210. By forming the thin film pattern TP on the substrate 300, the manufacturing process of the thin film pattern may be simplified.

In the method of manufacturing the thin film pattern according to the first embodiment of the present invention, the thin film pattern TP is formed on the substrate 300 through two vapor deposition processes using two masks 100 and 200. Although not limited thereto, the vapor deposition process of M times (where N is a natural number of N) using N masks (where N is a natural number of two or more) in which a plurality of opening patterns are arranged in a diagonal direction is provided. The thin film pattern TP may be formed on the substrate 300.

11A to 11D are diagrams for explaining a method of manufacturing a thin film pattern using a manufacturing apparatus of a thin film pattern according to a second embodiment of the present invention step by step.

A method of manufacturing a thin film pattern according to a second exemplary embodiment of the present invention will be described with reference to FIGS. 11A through 11D in conjunction with FIGS. 7 and 9 as follows.

First, as shown in (a) and (b) of FIG. 11A, the substrate 300 is seated on the substrate support member 410 of the process chamber PC, and then the mask alignment means of the mask support member 430. The mask 500 may be aligned by aligning the positions of the plurality of first mask alignment units 520 formed on the mask 500 and the substrate alignment units 302 formed on the substrate 300 using the alignment vision 440 and 434. Align the substrate 300.

Then, as shown in (a) and (b) of FIG. 11B, a thin film material passing through the plurality of opening patterns 510 formed in the mask 500 by forming a plasma in the reaction space of the process chamber PC. Is deposited on the substrate 300 to form a first deposition pattern DP1 of a predetermined shape on the substrate 300.

Then, as shown in (a) and (b) of FIG. 11C, the mask 500 supported by the mask support frame 432 by the mask alignment means 434 is horizontally moved by a predetermined distance D. Shift to In this case, the predetermined distance D of the shifted mask 500 corresponds to a distance between two opening patterns 510 adjacent in a diagonal direction or a distance between a first row and a second row of the mask 500.

Subsequently, the positions of the plurality of second mask alignment units 530 formed on the mask 500 and the substrate alignment units 302 formed on the substrate 300 are aligned using the mask alignment unit 434 and the alignment vision 340. The mask 500 and the substrate 300 are aligned. In this case, both edge portions of each of the opening patterns 510 of the shifted mask 500 overlap the first deposition pattern DP1 formed on the substrate 300.

Then, as shown in (a) and (b) of FIG. 11D, a thin film material passing through the plurality of opening patterns 510 formed in the mask 500 by forming a plasma in the reaction space of the process chamber PC. Is deposited on the substrate 300 to form a second deposition pattern DP2 of a predetermined shape on the substrate 300. In this case, the second deposition pattern DP2 is formed to overlap the ends of the first deposition pattern DP1 that are adjacent to each other.

Therefore, a plurality of thin film patterns TP are formed on the substrate 300 to which each of the plurality of first deposition patterns DP1 and each of the plurality of second deposition patterns DP2 are connected to each other. In this case, each of the thin film patterns TP formed in the first column on the substrate 300 is formed of the plurality of first deposition patterns DP1 and the mask 500 formed by the opening pattern 510a of the first column of the mask 500. Each of the thin film patterns TP formed by the plurality of second deposition patterns DP2 formed by the two rows of opening patterns 510b, and formed in the second row on the substrate 300, has the opening patterns in the second row of the mask 500. A plurality of first deposition patterns DP1 formed by 510b and a plurality of second deposition patterns DP2 formed by the opening patterns 510a of the first row of the mask 500 are formed.

In the method of manufacturing the thin film pattern according to the second embodiment of the present invention described above, the thin film pattern is formed by forming the thin film pattern TP on the substrate 300 through two vapor deposition processes using the shifted mask 500. The manufacturing process of (TP) can be simplified.

Meanwhile, in the method of manufacturing the thin film pattern according to the second embodiment of the present invention described above, the thin film pattern TP is formed on the substrate 300 through two vapor deposition processes using one mask 500. However, the present invention is not limited thereto, and the thin film pattern TP may be formed on the substrate 300 through i vapor deposition processes (i.e., a natural number of i≥2) using one mask having a plurality of diagonally divided opening patterns. May be formed.

On the other hand, in the apparatus and method for manufacturing a thin film pattern according to the embodiments of the present invention described above was described as performing a vapor deposition process by placing the mask (100, 200, 500) on the substrate 300, The present invention is not limited thereto, and the vapor deposition process may be performed by disposing the masks 100, 200, and 500 under the substrate 300, or by arranging the substrate 300 and the masks 100, 200, and 500 vertically.

In addition, in the above-described apparatus and method for manufacturing a thin film pattern according to the exemplary embodiments of the present invention, the thin film pattern TP is formed on the substrate 300, but the present invention is not limited thereto. The apparatus for manufacturing a thin film pattern and the method for manufacturing the same may be equally applied to a manufacturing process of a semiconductor device for forming a thin film transistor on a substrate 300 or a manufacturing method of a display device. That is, the present invention described above may be applied to form a gate layer, a gate insulating layer, a source / drain layer, a data line or a gate line formed in the display panel.

It will be understood by those skilled in the art that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. Therefore, it is to be understood that the embodiments described above are exemplary in all respects and not restrictive. The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and their equivalents are to be construed as being included within the scope of the present invention do.

100, 200, 500: mask 110, 210, 510: opening pattern
120, 220, 520, 530: mask alignment unit 300: substrate
310, 410: substrate support member 330, 430: mask support member
332, 432: mask support frame 334, 434: mask alignment means

Claims (25)

Mounting a substrate on a substrate support member provided in the process chamber; And
A thin film pattern is formed on the substrate through a vapor deposition process of M (where N is a natural number of N or N + 1) using N (where N is a natural number) masks having an opening pattern formed to be arranged in a predetermined shape. Including the process to
And the thin film pattern is formed by M deposition patterns deposited on the substrate to be connected to each other through the opening pattern of the mask. The method of claim 1,
And the opening patterns are arranged in a staggered form so as to be spaced apart by a distance set in a vertical direction and a horizontal direction of the mask. The method of claim 1,
The opening pattern is,
An opening pattern of a plurality of first rows formed in the first row of the mask to be spaced apart by a predetermined distance; And
A thin film comprising an opening pattern of a plurality of second rows formed in a second column of the mask between the first rows of the mask so as to correspond to the opening patterns of the plurality of first rows formed in the first row Method of making a pattern. The method of claim 1,
The M deposition pattern is a method of manufacturing a thin film pattern, characterized in that formed to overlap each other. The method of claim 1,
The thin film pattern is formed on the substrate by two vapor deposition processes using different first and second masks. The method of claim 5, wherein
Forming a thin film pattern on the substrate,
Loading the first mask into the process chamber to align the position of the first mask with the substrate;
Forming a first deposition pattern on the substrate corresponding to the opening pattern of the first mask through a vapor deposition process using the first mask;
Unloading the first mask in the process chamber;
Loading the second mask into the process chamber to align the position of the second mask with the substrate; And
And forming a second deposition pattern on the substrate corresponding to the opening pattern of the second mask through a vapor deposition process using the second mask.
The thin film pattern is a method of manufacturing a thin film pattern, characterized in that formed by the first deposition pattern and the second deposition pattern overlapping each other. The method of claim 1,
The thin film pattern is a method of manufacturing a thin film pattern, characterized in that formed on the substrate by two vapor deposition process using a mask. The method of claim 7, wherein
Forming a thin film pattern on the substrate,
Aligning a position of the mask with the substrate;
Forming a first deposition pattern on the substrate corresponding to the opening pattern of the mask through a vapor deposition process using the mask;
Shifting the mask by a predetermined distance to align the position of the second mask with the substrate; And
And forming a second deposition pattern on the substrate corresponding to the opening pattern of the mask through a vapor deposition process using the shifted mask.
The thin film pattern is a method of manufacturing a thin film pattern, characterized in that formed by the first deposition pattern and the second deposition pattern overlapping each other. The method of claim 6 or 8,
The method in which the first deposition pattern and the second deposition pattern overlap with each other has a relatively large area. A substrate support member installed in a process chamber providing a reaction space for performing a vapor deposition process to support a substrate;
A mask support member in which N masks having an opening pattern formed to be arranged in a predetermined form, where N is a natural number, are sequentially loaded / unloaded;
And a shower head installed on the mask support member and spraying a process gas for forming a thin film pattern on the substrate to the reaction space.
The thin film pattern may be formed on the substrate to be connected to each other through the opening patterns of the respective masks according to M vapor deposition processes using the N masks (where M is N + 1 or N natural number). An apparatus for producing a thin film pattern, characterized in that formed by a deposition pattern. A load lock chamber for temporarily storing a substrate;
A transfer chamber for transporting the substrate stored in the load lock chamber;
On the substrate supplied from the transfer chamber through a vapor deposition process of M (where N is a natural number of N or N + 1) using N (where N is a natural number) masks having an opening pattern formed to be arranged in a predetermined shape. A plurality of process chambers forming a thin film pattern on the substrate; And
And a mask replacement unit for sequentially loading / unloading the N masks into each of the plurality of process chambers.
And the thin film pattern is formed by M deposition patterns deposited on the substrate so as to be connected to each other through the opening patterns of the respective masks. The method of claim 10 or 11,
The M deposition pattern is a device for manufacturing a thin film pattern, characterized in that formed to overlap each other. The method of claim 11,
Each process chamber,
A substrate support member for supporting the substrate;
A mask support member for supporting the mask sequentially loaded / unloaded by the mask replacement unit; And
And a shower head installed on the mask support member and spraying a process gas for forming a thin film pattern on the substrate to the reaction space. The method according to claim 10 or 13,
And the thin film pattern is formed on the substrate by two vapor deposition processes using different first and second masks. 15. The method of claim 14,
The mask support member,
A mask support frame for supporting the mask; And
An apparatus for manufacturing a thin film pattern provided on the mask support frame, the apparatus comprising mask alignment means for aligning positions of the first mask and the substrate or aligning positions of the second mask and the substrate; . A substrate support member installed in a process chamber providing a reaction space for performing a vapor deposition process to support a substrate;
A mask having an opening pattern formed to be arranged in a predetermined form;
A mask support member which supports the mask and selectively shifts the mask by a predetermined distance;
And a shower head installed on the mask support member and spraying a process gas for forming a thin film pattern on the substrate to the reaction space.
The thin film pattern is formed by i deposition patterns deposited on the substrate to be connected to each other through an opening pattern of the mask by i (but a natural number of i≥2) vapor deposition processes using the mask. The manufacturing apparatus of the thin film pattern characterized by the above-mentioned. A load lock chamber for temporarily storing a substrate;
A transfer chamber for transporting the substrate stored in the load lock chamber;
Including a plurality of process chambers to form a thin film pattern on the substrate supplied from the transfer chamber through a vapor deposition process i (but a natural number of i≥2) using a mask having an opening pattern formed to be arranged in a predetermined form Is composed,
And the thin film pattern is formed by i deposition patterns deposited on the substrate to be connected to each other through the opening pattern of the mask. The method according to any one of claims 10, 11, 16, and 17,
And the opening patterns are arranged in a staggered form so as to be spaced apart by a distance set in a vertical direction and a horizontal direction of the mask. The method according to any one of claims 10, 11, 16, and 17,
The opening pattern is,
An opening pattern of a plurality of first rows formed in the first row of the mask to be spaced apart by a predetermined distance; And
A thin film comprising an opening pattern of a plurality of second rows formed in a second column of the mask between the first rows of the mask so as to correspond to the opening patterns of the plurality of first rows formed in the first row Device for manufacturing of patterns. The method according to claim 16 or 17,
The i deposition pattern is a device for manufacturing a thin film pattern, characterized in that formed to overlap each other. The method of claim 17,
Each process chamber,
A substrate support member for supporting the substrate;
A mask support member which supports the mask and selectively shifts the mask by a predetermined distance; And
And a shower head installed on the mask support member and spraying a process gas for forming a thin film pattern on the substrate to the reaction space. The method of claim 16 or 21,
And the thin film pattern is formed on the substrate through two vapor deposition processes using one of the masks. The method of claim 22,
Wherein,
A plurality of first mask alignment units; And
And a plurality of second mask alignment units spaced apart from each of the plurality of first mask alignment units by the shift distance of the mask. The method of claim 23,
The mask support member,
A mask support frame for supporting the mask; And
A position of the mask and the substrate relative to the second mask alignment unit, the position of the mask and the substrate aligned with the first mask alignment unit or shifting the mask by a predetermined distance; Device for manufacturing a thin film pattern, characterized in that it comprises a mask alignment means for aligning. The method according to any one of claims 10, 11, 16, and 17,
And a plurality of alignment visions installed in the process chamber to capture positions of the mask and the substrate.

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