KR20120055979A - Seupeoteoring for junction of the target compositions and methods using the same rotary joint of the target - Google Patents
Seupeoteoring for junction of the target compositions and methods using the same rotary joint of the target Download PDFInfo
- Publication number
- KR20120055979A KR20120055979A KR1020100117463A KR20100117463A KR20120055979A KR 20120055979 A KR20120055979 A KR 20120055979A KR 1020100117463 A KR1020100117463 A KR 1020100117463A KR 20100117463 A KR20100117463 A KR 20100117463A KR 20120055979 A KR20120055979 A KR 20120055979A
- Authority
- KR
- South Korea
- Prior art keywords
- target
- backing tube
- surface treatment
- sputtering
- circumferential surface
- Prior art date
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/264—Bi as the principal constituent
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Ceramic Products (AREA)
Abstract
The present invention relates to a bonding composition of a rotary target for sputtering and a bonding method of a rotary target using the same, and easy to obtain a bonding composition for bonding and bonding the target on the outer circumferential surface of the backing tube, by mixing two or more inexpensive metals at a constant composition ratio The purpose is to be able to replace the indium by allowing the melt bonding through the composition composition. Sputtering rotary target bonding composition is configured for this sputtering rotary target bonding composition is a bismuth (Bismuth) 50 ~ 54% by weight and the tin (Sn) 46 ~ 50% by weight of the mixture composition or Bismuth (Bismuth) 49? 54 wt%, 45-50 wt% tin (Sn) and 1-6 wt% of indium (In, or silver (Ag)). In addition, the sputtering rotary target bonding method comprises the steps of (a) heating the backing tube constituting the sputtering rotary target and the target above a certain temperature, (b) powder on each of the outer peripheral surface of the heated backing tube and the inner peripheral surface of the target (C) cooling the surface-treated backing tube and the target, (d) bonding and positioning the target on the outer circumferential surface of the backing tube, (e) Heating the positioned backing tube and the target to a predetermined temperature or more; (f) allowing the vibration to occur while heating the backing tube and the target; and (g) heating and vibrating the backing tube and the target to form a bonding composition. And a step of (h) cooling.
Description
The present invention relates to a bonding composition of a rotary target for sputtering and a method of bonding a rotary target using the same, and more particularly, a structure that is easily available and cheap in the market when bonding the target on the outer circumferential surface of the backing tube constituting the rotary target for sputtering. The present invention relates to a bonding composition for sputtering rotary targets, and a bonding method of a rotary target using the same, in which a component is bonded through a bonding composition having a predetermined composition ratio.
In general, sputtering refers to a technique of attaching a film to a target surface in the form of a film, and sputtering is a thin film or a thick film by evaporating a solid in a high vacuum state to make an electronic circuit in a ceramic or semiconductor material. It is used when forming).
In other words, the sputtering as described above is ionized by applying a DC voltage between the substrate and the target (target material Cr? Ti, etc.) while introducing an inert gas (mainly argon gas) in a vacuum. This is a method of colliding argon with a target to form a target material on a substrate. In addition, it is possible to perform reactive sputtering (ITO? Sn, and so on) by putting the O 2? N 2 gas of a very small amount, such as argon gas.
The sputtering as described above is classified by dry plating method and is plated without exposing the object to be coated to liquid or high temperature gas. Therefore, it is used for the board | plate material and the molded article of various base materials (resin, glass, ceramic, etc.), for example, as electrode, shield, masking.
On the other hand, as described above, a rotary target is used as an electrode for applying a high voltage in a sputtering apparatus for coating or thin film plating. The sputtering rotary target is composed of a cylindrical target consisting of a cylindrical backing tube and the outer peripheral surface of the backing tube is coupled to the target is coupled on the outer peripheral surface of the backing tube by fusion bonding of indium (Indium) is integrated.
Indium, as mentioned above, is a rare metal element belonging to group 13 of the boron group of the periodic table. It was called indium because it was offered.
Indium, as described above, is used to weld seal between glass, metal, quartz, ceramic, and marble because it has a peculiar property of melting or sticking to clean glass and other surfaces when melted. It is also used for painting aircraft engine bearings because it increases corrosion resistance and forms an adhesive oil film on the surface.
However, as described above, indium, which allows the cylindrical target to be melt-bonded on the outer circumferential surface of the cylindrical backing tube constituting the sputtering rotary target, belongs to a rare metal and is expensive, resulting in the manufacture of the rotary target for sputtering. There is a problem that an increase in production costs will follow.
In addition, as described above, indium, which allows the cylindrical target to be melt-bonded on the outer circumferential surface of the cylindrical backing tube constituting the sputtering rotary target, is a rare metal, and since its supply is not large, the market price is very unstable. There is a problem with supply and demand.
The present invention has been made to solve the problems of the prior art, it is easy to obtain a bonding composition for bonding and bonding the target on the outer circumferential surface of the backing tube and melted through the bonding composition formed by mixing two or more inexpensive metals at a constant composition ratio An object of the present invention is to provide a bonding composition for a sputtering rotary target and a method of bonding a rotary target using the same, by which indium can be replaced by being able to bind.
In addition, the technique according to the present invention is easy to obtain a bonding composition for bonding the target on the outer circumferential surface of the backing tube, it is possible to melt-bond through the bonding composition formed by mixing two or more inexpensive metals in a predetermined composition ratio rotary sputtering The purpose is to lower the production cost of the target.
In addition, the technology according to the present invention is easy to obtain a bonding composition for bonding the target on the outer circumferential surface of the backing tube, it is possible to stably melt material through the bonding composition formed by mixing two or more inexpensive metals in a certain composition ratio The purpose is to enable the supply and demand of.
The present invention configured to achieve the above object is as follows. That is, the bonding composition of the sputtering rotary target according to the present invention has a cylindrical shape on the outer circumferential surface of the backing tube formed of a cylindrical shape of the sputtering rotary target for applying a high voltage while being rotatably installed in the sputtering chamber and being rotated by the driving motor. In the sputtering rotary target bonding composition for joining the target of the sputtering, the sputtering rotary target bonding composition for splicing the target on the outer circumferential surface of the backing tube is 50 to 54% by weight of bismuth and 46 to 50% by weight of tin (Sn). The composition is mixed at the rate of%.
In addition, the sputtering rotary target bonding composition according to the present invention is rotatably installed in the sputtering chamber is a cylindrical on the outer peripheral surface of the backing tube formed in the cylindrical shape of the sputtering rotary target for applying a high voltage while being rotated by the drive of the drive motor In the sputtering rotary target bonding composition for bonding the target of the target, the rotary target bonding composition for adhering the target on the outer circumferential surface of the backing tube is 49 to 54% by weight of bismuth, 45 to 50% by weight of tin (Sn) and Indium (In) or silver (Ag) may be mixed in a proportion of 1 to 6% by weight.
In the composition of the present invention as described above, the bonding composition of bismuth and tin (Sn) or the bonding composition of bismuth and tin (Sn) and indium (In, or silver (Ag)) through melting When the target is adhered on the outer circumferential surface of the tube, the heating temperature of the backing tube and the target is more preferably heated to 271.3 ° C or higher.
And, in the configuration of the present invention as described above, the material of the backing tube is made of titanium (Ti) or stainless steel (S / S), but if the material of the backing tube is titanium (Ti), the target is ITO, AZO, ZNO A target of one selected ceramic material or a target of metal material having a low coefficient of thermal expansion selected from molybdenum (Mo), molybdenum (MoTi), titanium tungsten (TiW), molybdenum tungsten (MoW), and silicon (Si) is combined. When the backing tube is made of stainless steel (S / S), the coefficient of thermal expansion of one selected from titanium (Ti), aluminum (Al), copper (Cu), silver (Ag), aluminum silicon (AlSi), and chromium (Cr) The target of the high metal material is combined.
A sputtering rotary target bonding method, which is another feature of the technology according to the present invention, includes: (a) heating a backing tube and a target constituting a sputtering rotary target to a predetermined temperature or more; (b) applying a surface treatment agent on a powder to the outer circumferential surface of the heated backing tube and the inner circumferential surface of the target through the step (a) to melt the surface through a brush or an ultrasonic surface treatment machine; (c) cooling the surface-treated backing tube and the target through step (b); (d) engaging the target on the outer circumferential surface of the backing tube cooled through the step (c) and positioning the target vertically on the surface plate; (e) heating the backing tube and the target positioned on the surface plate to a predetermined temperature or more through the step (d); (f) allowing the vibration to occur while the backing tube and the target are heated to a predetermined temperature or more through the step (e); (g) The rotary target bonding composition is melted and injected into the space between the outer circumferential surface of the backing tube and the target inner circumferential surface while heating and vibrating the backing tube and the target through the step (f) to uniform the molten rotary target bonding composition. Making a distribution; And (h) melt-injecting the rotary target bonding composition through step (g) to achieve a uniform distribution by vibration, and then cooling and stopping heating and vibration.
As described above, the bonding method of the rotary target according to the present invention is made of titanium (Ti) or stainless steel (S / S), but the backing tube is made of titanium (Ti) in the case of ITO, AZO, ZnO. Bonding a target made of any one of ceramic materials or a target made of metal having a low coefficient of thermal expansion selected from molybdenum (Mo), molybdenum (MoTi), titanium tungsten (TiW), molybdenum tungsten (MoW), and silicon (Si) On the other hand, in the case of the stainless steel (S / S) backing tube selected one of titanium (Ti), aluminum (Al), copper (Cu), silver (Ag), aluminum silicon (AlSi), chromium (Cr) It can be made of a configuration for bonding the target of the metal material having a high coefficient of thermal expansion.
Meanwhile, in the aforementioned method of joining the rotary target, a target made of any one ceramic material of ITO, AZO, or ZnO or molybdenum (Mo), molybdenum (MoTi), or titanium tungsten ( The surface treatment of the target inner circumferential surface during the joining of a target of a metal material having a low coefficient of thermal expansion selected from TiW), molybdenum (MoW), and silicon (Si) is surface treated first and second, and the surface treatment of the outer circumferential surface of the backing tube May be configured to perform a primary surface treatment.
Then, the surface treatment process of the target in the surface treatment process of the backing tube outer circumferential surface and the target inner circumferential surface in the step (b) of the bonding method according to the present invention described above is a powder surface on the inner circumferential surface of the target heated through the step (a) Primary surface treatment by applying a treatment agent and rubbing it through a brush or an ultrasonic surface treatment machine during melting; And a second surface treatment by applying a surface treatment agent on a powder to each of the inner surface of the target surface treated by primary treatment, followed by rubbing through a brush or an ultrasonic surface treatment agent.
In the above-described configuration, the surface treatment agent in the first surface treatment of the target inner circumferential surface is a mixture of tin (Sn) and indium (In) on the powder, but the weight of indium (In) does not exceed 40% by weight of the total weight. It can be mixed in the range, the surface treatment agent in the secondary surface treatment of the target inner peripheral surface is made of a mixture of tin (Sn) and silver (Ag) and titanium (Ti) on the powder of silver (Ag) and titanium (Ti) The weight may be mixed within the range of 5% by weight or less of the total weight. At this time, the surface treatment agent on the outer circumferential surface of the backing tube is made of a mixture of tin (Sn), silver (Ag) and titanium (Ti), the weight of silver (Ag) and titanium (Ti) is less than 5% by weight of the total weight It can be mixed within a range.
In addition, in the configuration according to the invention corresponding to the backing tube of stainless steel (S / S) material titanium (Ti), aluminum (Al), copper (Cu), silver (Ag), aluminum silicon (AlSi), chromium ( The surface treatment of the backing tube outer circumferential surface and the target inner circumferential surface at the time of joining the metal target having a high coefficient of thermal expansion selected from Cr) may be composed of a surface treatment for each primary.
In the composition according to the present invention as described above, the surface treatment agent during the surface treatment of the backing tube outer peripheral surface and the target inner peripheral surface is made of a mixture of tin (Sn), silver (Ag) and titanium (Ti) on the powder (Ag) and titanium The weight of (Ti) can be mixed within the range of 5% by weight or less of the total weight.
In addition, the heating temperature of the backing tube and the target in the step (a) of the configuration according to the present invention as described above is more preferably heated to 231.9 ℃ or more melting point of the tin (Sn).
And, in the step (g) of the configuration according to the present invention, the rotary target bonding composition is a mixed composition or bismuth (Bismuth) 49? At a ratio of 50 to 54% by weight of bismuth and 46 to 50% by weight of tin (Sn). 54 wt%, 45-50 wt% tin (Sn) and 1-6 wt% of indium (In) or silver (Ag) may be mixed.
Further, the heating temperature of the backing tube and the target in the process of step (e) according to the present invention is more heated to 271.3 ℃ or more so that the molten state of the molten bonding composition introduced in the process of step (g) can be maintained Good.
According to the technique of the present invention, it is easy to obtain a bonding composition for bonding and bonding a target on the outer circumferential surface of the backing tube, and indium (Indium) may be melt-bonded through a bonding composition formed by mixing two or more inexpensive metals at a predetermined composition ratio. Can be replaced.
In addition, the technique according to the present invention is easy to obtain a bonding composition for bonding and bonding the target on the outer circumferential surface of the backing tube, it is possible to significantly reduce the production cost of the sputtering rotary target by using a mixture of two or more cheap metal at a constant composition ratio have.
In addition, the technique according to the present invention has the advantage that it is easy to obtain a bonding composition for bonding and bonding the target on the outer circumferential surface of the backing tube, and the supply of a stable material is possible by mixing two or more inexpensive metals at a predetermined composition ratio.
1 is a perspective view showing a sputtering rotary target applied technology according to the present invention.
2 is a cross-sectional view showing a sputtering rotary target according to the present invention.
Figure 3 is a block diagram showing a method of joining a rotary target using the bonding composition of the rotary target for sputtering according to the present invention.
Figure 4 is a block diagram showing the surface treatment in the bonding method of the rotary target using the bonding composition of the rotary target for sputtering according to the present invention.
Hereinafter, the bonding composition of the rotary target for sputtering and the bonding method of the rotary target using the same according to a preferred embodiment of the present invention will be described in detail.
1 is a perspective view showing a sputtering rotary target applied technology according to the present invention, Figure 2 is a cross-sectional configuration showing a sputtering rotary target according to the present invention, Figure 3 is a bonding composition of the rotary target for sputtering according to the present invention Figure 4 is a block diagram showing a bonding method of the rotary target, Figure 4 is a block diagram showing the surface treatment in the bonding method of the rotary target using the bonding composition of the rotary target for sputtering according to the present invention.
1 to 4, sputtering rotary target bonding composition according to the present invention for bonding the
The composition ratio of bismuth and tin in the rotary
The sputtering rotary
The composition ratio of bismuth, tin (Sn), and indium (In) or silver (Ag) in the composition of the rotary
On the other hand, the process of bonding the
Next, as described above, the
Bismuth (Bismuth) constituting the
Bismuth is a distinctive reddish-grey-white color that can be distinguished from other metals. It is often produced in the free state in nature and exists as sulfite lumber (Bi 2 S 3 ) and oxide oxide lumber (Bi 2 O 3 ). In addition, these metals are often obtained as a by-product of the refining process because they are often combined with tin, lead and copper ores. Pure bismuth is obtained by reducing sulfur by reacting oxides with carbon or roasting sulfides in the presence of char and metal iron. The melting point of bismuth is 271.3 deg. C and specific gravity is 9.747 g / cc (20 deg. C).
Meanwhile, tin (Sn) constituting the
Indium (In) constituting the
Indium (In) is stable in air at room temperature, but glows blue violet in red and becomes In 2 O 3 which is a yellow oxide. Soluble in mineral acids, but not affected by potassium hydroxide or boiling water. It bonds directly when heated in the presence of halogen or sulfur. A few indium compounds, such as halides, have been made, but usually trivalent compounds are stable. Indium (In) reacts with major Group 15 elements to form compounds with semiconductor properties (indium phosphide, indium arsenide, and indium antimonide). The melting point of this indium is 156.61 ° C.
In addition, silver (Ag) used in place of indium (In) in the composition of the bonding composition according to the present invention is a metal element well known from the past, and is a kind of precious metal like gold, iridium, palladium, platinum and the like. Silver ornaments and decorations were found in the tomb of the emperor in 4000 BC. By 800 BC, gold and silver were used as currency in many countries between the Indus and Nile rivers, and later in Roman times the Romans made great advances in silver metallurgy, and in many places silver smelting plants were built to Gained or made silver ornaments. Moreover, centuries later, some gold or silver ores were found to form mercury and amalgam, which led to the use of the patio process. The melting point of this silver (Ag) is 961.3 ℃.
In the composition of the
On the other hand, the heating temperature of the above-described
And, the material of the
On the other hand, the bonding method of the rotary target according to the present invention using the
In the rotary target bonding method according to the present invention configured as described above, the surface treatment agent is applied differently according to the material of the
Meanwhile, in the above-described method of joining the rotary target, the
In other words, the
The surface treatment of the inner circumferential surface of the
Meanwhile, as described above, when the
As described above, when the
On the other hand, titanium (Ti), aluminum (Al), copper (Cu), silver (Ag), aluminum silicon (AlSi), corresponding to the
As described above, the method for bonding the
As described above, in step (a) of heating the
On the other hand, as described above, the heating temperature of the
On the other hand, even when the surface treatment agent is made of tin (Sn), silver (Ag), and titanium (Ti), the heating temperature of the
Next, the
On the other hand, in the step (b) step (S110) as described above, the
In the surface treatment of the
In addition, the
On the other hand, titanium (Ti), aluminum (Al), copper (Cu), silver (Ag), aluminum silicon (AlSi), corresponding to the
As described above, the surface treatment agent is applied to the outer circumferential surface of the
In other words, the surface treatment agent melted through the process (S110) of the step (b) as described above to be applied to the outer peripheral surface of the
Therefore, in the process of dispersing the surface treatment agent melted through the process (S110) of the step (b) on the outer circumferential surface of the
Process (S120) of step (c) according to the present invention is a process (S120) of cooling the
In addition, the process (S120) of the step (c) as described above is heated in the process of surface treatment of the outer peripheral surface of the
Cooling in the cooling process of step (c) step (S120) as described above is better to cool through natural cooling at room temperature in order to prevent a sudden change of the melt-coated surface treatment agent.
Next, the process of step (d) is a process (S130) of combining the
As described above, the outer circumferential surface of the
In other words, when the inner diameter of the
The process of step (e) according to the present invention is a process (S140) for heating the
As described above, the heating temperature of the
Next, the process of step (f) according to the present invention is a process of vibrating through indirect vibration of the
As described above, the process of allowing vibration to occur while heating the
On the other hand, the vibration in the process (S150) of the step (f) to make a vibration while heating the
The process of step (g) constituting the present invention is a process of melt-injecting the
In other words, when the
In the process (S160) of the step (g) as described above, the
On the other hand, the bismuth (Bismuth) of the
Next, the process of step (h) according to the present invention by cooling the
Therefore, as described above, the vibration (or rotation) in the state in which the
On the other hand, the cooling through the process (S170) of the step (h) as described above is such that the melt-injected
As described above, the technique according to the present invention may replace indium, which is a rare metal and expensive by bonding the
The present invention is not limited to the above embodiments, and various modifications can be made within the scope of the technical idea of the present invention.
100.
120.
Claims (16)
The sputtering rotary target bonding composition for bonding the target on the outer circumferential surface of the backing tube is a mixture composition of bismuth (Bismuth) 50 ~ 54% by weight and tin (Sn) 46 ~ 50% by weight Rotary target bonding composition for sputtering.
The rotary target bonding composition which allows the target to adhere to the outer circumferential surface of the backing tube may be 49 to 54 wt% of bismuth, 45 to 50 wt% of tin (Sn), and 1 to 2 wt% of indium (In) or silver (Ag). A rotary target bonding composition for sputtering, wherein the composition is mixed at a ratio of 6% by weight.
(b) applying a surface treatment agent on a powder to the outer circumferential surface of the backing tube and the inner circumferential surface of the target heated by the step (a) to melt the surface by rubbing through a brush or an ultrasonic surface treatment machine;
(c) cooling the backing tube and the target surface-treated through step (b);
(d) engaging the target on the outer circumferential surface of the backing tube cooled through the step (c) and positioning the target vertically on the surface plate;
(e) heating the backing tube and the target positioned on the surface plate in a step (d) to a predetermined temperature or more;
(f) a step of vibrating while the backing tube and the target are heated to a predetermined temperature or more through the step (e);
(g) melting and rotating the rotary target bonding composition into the space between the outer circumferential surface of the backing tube and the target inner circumferential surface while heating and vibrating the backing tube and the target through the step (f). Allowing a uniform distribution of the composition; And
(h) melt sputtering the rotary target bonding composition through step (g) to achieve a uniform distribution by vibration, and then splicing the rotary target sputtering comprising a step including cooling and stopping the vibration. Way.
Sputtering rotary target bonding method, characterized in that consisting of a step of rubbing the second surface treatment through a brush or an ultrasonic surface treatment in the middle of applying the surface treatment agent on the powder to each of the inner surface of the target surface treatment target.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100117463A KR101341705B1 (en) | 2010-11-24 | 2010-11-24 | Method for bonding rotary target for sputtering |
CN201180065900.9A CN103328682B (en) | 2010-11-24 | 2011-11-24 | The method of joining of sputtering rotary target |
TW100143157A TWI561654B (en) | 2010-11-24 | 2011-11-24 | Composition for bonding rotary target for sputtering and method for bonding rotary target using the same |
PCT/KR2011/009016 WO2012070882A2 (en) | 2010-11-24 | 2011-11-24 | Bonding composition for a rotary target for sputtering and bonding method of a rotary target using same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100117463A KR101341705B1 (en) | 2010-11-24 | 2010-11-24 | Method for bonding rotary target for sputtering |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20120055979A true KR20120055979A (en) | 2012-06-01 |
KR101341705B1 KR101341705B1 (en) | 2013-12-16 |
Family
ID=46146314
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020100117463A KR101341705B1 (en) | 2010-11-24 | 2010-11-24 | Method for bonding rotary target for sputtering |
Country Status (4)
Country | Link |
---|---|
KR (1) | KR101341705B1 (en) |
CN (1) | CN103328682B (en) |
TW (1) | TWI561654B (en) |
WO (1) | WO2012070882A2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113523239A (en) * | 2021-06-29 | 2021-10-22 | 芜湖映日科技股份有限公司 | Target binding process using indium-tin mixed material |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6393826B2 (en) * | 2014-05-09 | 2018-09-19 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Shielding device for rotating cathode, rotating cathode, and method for shielding dark part in deposition equipment |
CN105331937B (en) * | 2014-07-30 | 2018-04-13 | 合肥江丰电子材料有限公司 | Target processing unit (plant) and processing method |
CN105624627B (en) * | 2016-03-14 | 2018-08-31 | 无锡舒玛天科新能源技术有限公司 | Binding formula magnetron sputtering rotary target material and preparation method thereof |
JP2018168417A (en) * | 2017-03-29 | 2018-11-01 | 三菱マテリアル株式会社 | Method for manufacturing cylindrical sputtering target and cylindrical sputtering target |
CN109440065B (en) * | 2018-11-09 | 2020-07-14 | 南昌大学 | Preparation method of nano-scale corrosion-resistant molybdenum-tungsten film on surface of magnesium alloy |
CN110408901B (en) * | 2019-08-21 | 2020-06-26 | 东莞市欧莱溅射靶材有限公司 | Method for pretreating inner wall of whole target tube bound by long tube rotating target by brush plating |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0787818A1 (en) * | 1996-01-31 | 1997-08-06 | LEYBOLD MATERIALS GmbH | Tin or tin base alloy sputtering target |
ES2142008T3 (en) * | 1996-01-31 | 2000-04-01 | Leybold Materials Gmbh | WHITE FOR IONIC PROJECTION CONSTITUTED BY TIN OR A TIN BASED ALLOY. |
DE102004060423B4 (en) * | 2004-12-14 | 2016-10-27 | Heraeus Deutschland GmbH & Co. KG | Pipe target and its use |
US7922066B2 (en) * | 2005-09-21 | 2011-04-12 | Soleras, LTd. | Method of manufacturing a rotary sputtering target using a mold |
US20070084719A1 (en) * | 2005-09-28 | 2007-04-19 | Wickersham Charles E Jr | Inertial bonding method of forming a sputtering target assembly and assembly made therefrom |
WO2007041425A2 (en) * | 2005-10-03 | 2007-04-12 | Thermal Conductive Bonding, Inc. | Very long cylindrical sputtering target and method for manufacturing |
JP5467735B2 (en) * | 2007-07-02 | 2014-04-09 | 東ソー株式会社 | Cylindrical sputtering target |
JP5387118B2 (en) * | 2008-06-10 | 2014-01-15 | 東ソー株式会社 | Cylindrical sputtering target and manufacturing method thereof |
-
2010
- 2010-11-24 KR KR1020100117463A patent/KR101341705B1/en active IP Right Grant
-
2011
- 2011-11-24 TW TW100143157A patent/TWI561654B/en active
- 2011-11-24 CN CN201180065900.9A patent/CN103328682B/en active Active
- 2011-11-24 WO PCT/KR2011/009016 patent/WO2012070882A2/en active Application Filing
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113523239A (en) * | 2021-06-29 | 2021-10-22 | 芜湖映日科技股份有限公司 | Target binding process using indium-tin mixed material |
Also Published As
Publication number | Publication date |
---|---|
WO2012070882A2 (en) | 2012-05-31 |
CN103328682B (en) | 2016-04-06 |
WO2012070882A4 (en) | 2012-11-15 |
KR101341705B1 (en) | 2013-12-16 |
CN103328682A (en) | 2013-09-25 |
TW201231703A (en) | 2012-08-01 |
WO2012070882A3 (en) | 2012-09-27 |
TWI561654B (en) | 2016-12-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101341705B1 (en) | Method for bonding rotary target for sputtering | |
US4117968A (en) | Method for soldering metals with superhard man-made materials | |
Sharif et al. | Effect of indium addition in Sn-rich solder on the dissolution of Cu metallization | |
Chang et al. | Intermetallic compounds formation and interfacial adhesion strength of Sn–9Zn–0.5 Ag solder alloy hot-dipped on Cu substrate | |
KR101225844B1 (en) | Composition for Bonding Rotary Target for Sputtering and Method for Bonding Rotary Target Using the Same | |
Gafner | The development of 990 gold-titanium, and its production, use, and properties | |
CN106141349A (en) | A kind of welding procedure of mono-layer diamond tool brazing solder | |
Hu et al. | Insights on interfacial IMCs growth and mechanical strength of asymmetrical Cu/SAC305/Cu-Co system | |
TWI557250B (en) | Method for separating target of rotary target | |
CN102642099A (en) | Sn-Zn-based lead-free solder alloy for aluminum bronze soldering and method for preparing same | |
CN109175572A (en) | A kind of solder joint and its preparation process of biphasic substrate and lead-free brazing | |
Said et al. | Corrosion properties of Cu/Sn–3.0 Ag–0.5 Cu/Cu solder butt joints fabricated by conventional reflow and microwave hybrid heating | |
JP2006257510A (en) | Sputtering target manufacturing method, and sputtering target | |
CN110629063A (en) | Preparation process of antioxidant wear-resistant precious metal jewelry | |
WO2023103289A1 (en) | Lead-free solder alloy, preparation method therefor and use thereof | |
Rasbudin et al. | The effect of multiple reflow on intermetallic layer of Sn-4.0 AgCu/Cu by using microwave and reflow soldering | |
TW201236797A (en) | Pb-free solder paste | |
TWI249449B (en) | Brazing abrasive wire saw and method for producing the same | |
Rahman et al. | Experimental determination and thermodynamic modeling of the Sn-rich corner of the ternary Ni-Pd-Sn phase diagram at 250° C | |
KR20120006894A (en) | Bonding a composite of rotary target and bonding method | |
Yen et al. | Investigation of interfacial reactions and Sn whisker formation in the matte Sn layer with NiP/Ni/Cu and Ni/Cu multilayer systems | |
CN106607769B (en) | A kind of Study on Brazed Superabrasive Tools preparation method based on protective coating | |
US1161944A (en) | Process of forming a protective metal coating upon metallic articles. | |
US4654237A (en) | Process for chemical and thermal treatment of steel workpieces | |
KR20020021656A (en) | Precious metals-jewel tile and the manufacturing method of the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
N231 | Notification of change of applicant | ||
AMND | Amendment | ||
E902 | Notification of reason for refusal | ||
AMND | Amendment | ||
E601 | Decision to refuse application | ||
AMND | Amendment | ||
X701 | Decision to grant (after re-examination) | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20161201 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20171201 Year of fee payment: 5 |