TWI561654B - Composition for bonding rotary target for sputtering and method for bonding rotary target using the same - Google Patents

Composition for bonding rotary target for sputtering and method for bonding rotary target using the same

Info

Publication number
TWI561654B
TWI561654B TW100143157A TW100143157A TWI561654B TW I561654 B TWI561654 B TW I561654B TW 100143157 A TW100143157 A TW 100143157A TW 100143157 A TW100143157 A TW 100143157A TW I561654 B TWI561654 B TW I561654B
Authority
TW
Taiwan
Prior art keywords
rotary target
bonding rotary
sputtering
composition
same
Prior art date
Application number
TW100143157A
Other languages
Chinese (zh)
Other versions
TW201231703A (en
Inventor
Wayne R Simpson
Soon Seok Han
Original Assignee
Plansee Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plansee Se filed Critical Plansee Se
Publication of TW201231703A publication Critical patent/TW201231703A/en
Application granted granted Critical
Publication of TWI561654B publication Critical patent/TWI561654B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/264—Bi as the principal constituent
TW100143157A 2010-11-24 2011-11-24 Composition for bonding rotary target for sputtering and method for bonding rotary target using the same TWI561654B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100117463A KR101341705B1 (en) 2010-11-24 2010-11-24 Method for bonding rotary target for sputtering

Publications (2)

Publication Number Publication Date
TW201231703A TW201231703A (en) 2012-08-01
TWI561654B true TWI561654B (en) 2016-12-11

Family

ID=46146314

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100143157A TWI561654B (en) 2010-11-24 2011-11-24 Composition for bonding rotary target for sputtering and method for bonding rotary target using the same

Country Status (4)

Country Link
KR (1) KR101341705B1 (en)
CN (1) CN103328682B (en)
TW (1) TWI561654B (en)
WO (1) WO2012070882A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106463326B (en) * 2014-05-09 2018-07-13 应用材料公司 For the masking device of rotatable cathode, rotatable cathode and method for covering the dark space in depositing device
CN105331937B (en) * 2014-07-30 2018-04-13 合肥江丰电子材料有限公司 Target processing unit (plant) and processing method
CN105624627B (en) * 2016-03-14 2018-08-31 无锡舒玛天科新能源技术有限公司 Binding formula magnetron sputtering rotary target material and preparation method thereof
JP2018168417A (en) * 2017-03-29 2018-11-01 三菱マテリアル株式会社 Method for manufacturing cylindrical sputtering target and cylindrical sputtering target
CN109440065B (en) * 2018-11-09 2020-07-14 南昌大学 Preparation method of nano-scale corrosion-resistant molybdenum-tungsten film on surface of magnesium alloy
CN110408901B (en) * 2019-08-21 2020-06-26 东莞市欧莱溅射靶材有限公司 Method for pretreating inner wall of whole target tube bound by long tube rotating target by brush plating
CN113523239A (en) * 2021-06-29 2021-10-22 芜湖映日科技股份有限公司 Target binding process using indium-tin mixed material

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200728482A (en) * 2005-09-28 2007-08-01 Cabot Corp Inertial bonding method of forming a sputtering target assembly and assembly made therefrom
TW200927968A (en) * 2007-07-02 2009-07-01 Tosoh Corp Cylindrical sputtering target

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0787818A1 (en) * 1996-01-31 1997-08-06 LEYBOLD MATERIALS GmbH Tin or tin base alloy sputtering target
EP0787819B1 (en) * 1996-01-31 1999-12-22 LEYBOLD MATERIALS GmbH Tin or tin base alloy sputtering target
DE102004060423B4 (en) * 2004-12-14 2016-10-27 Heraeus Deutschland GmbH & Co. KG Pipe target and its use
US7922066B2 (en) * 2005-09-21 2011-04-12 Soleras, LTd. Method of manufacturing a rotary sputtering target using a mold
KR101456718B1 (en) * 2005-10-03 2014-10-31 플란제 에스이 Very long cylindrical sputtering target and method for manufacturing
JP5387118B2 (en) * 2008-06-10 2014-01-15 東ソー株式会社 Cylindrical sputtering target and manufacturing method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200728482A (en) * 2005-09-28 2007-08-01 Cabot Corp Inertial bonding method of forming a sputtering target assembly and assembly made therefrom
TW200927968A (en) * 2007-07-02 2009-07-01 Tosoh Corp Cylindrical sputtering target

Also Published As

Publication number Publication date
TW201231703A (en) 2012-08-01
CN103328682A (en) 2013-09-25
KR20120055979A (en) 2012-06-01
WO2012070882A2 (en) 2012-05-31
CN103328682B (en) 2016-04-06
WO2012070882A4 (en) 2012-11-15
WO2012070882A3 (en) 2012-09-27
KR101341705B1 (en) 2013-12-16

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