WO2012070882A2 - Bonding composition for a rotary target for sputtering and bonding method of a rotary target using same - Google Patents

Bonding composition for a rotary target for sputtering and bonding method of a rotary target using same Download PDF

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Publication number
WO2012070882A2
WO2012070882A2 PCT/KR2011/009016 KR2011009016W WO2012070882A2 WO 2012070882 A2 WO2012070882 A2 WO 2012070882A2 KR 2011009016 W KR2011009016 W KR 2011009016W WO 2012070882 A2 WO2012070882 A2 WO 2012070882A2
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Prior art keywords
target
backing tube
sputtering
surface treatment
circumferential surface
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PCT/KR2011/009016
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French (fr)
Korean (ko)
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WO2012070882A4 (en
WO2012070882A3 (en
Inventor
알 심슨웨인
한순석
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플란제 에스이
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Priority to KR1020100117463A priority Critical patent/KR101341705B1/en
Priority to KR10-2010-0117463 priority
Application filed by 플란제 에스이 filed Critical 플란제 에스이
Publication of WO2012070882A2 publication Critical patent/WO2012070882A2/en
Publication of WO2012070882A3 publication Critical patent/WO2012070882A3/en
Publication of WO2012070882A4 publication Critical patent/WO2012070882A4/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • B23K35/26Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262Sn as the principal constituent
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • B23K35/26Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/264Bi as the principal constituent

Abstract

The present invention relates to a bonding composition for a rotary target for a sputtering and bonding method of a rotary target using the same. According to the present invention, the bonding composition for a rotary target for sputtering bonds a cylindrical target to an outer peripheral surface of a cylindrical backing tube of the rotary target for sputtering, wherein the rotary target is rotatably installed in a chamber for sputtering to apply high voltage while being rotated by a driving motor, wherein the bonding composition for sputtering, for bonding the target to the outer peripheral surface of the backing tube comprises a mixture of 50 to 54 wt% of Bismuth and 46 to 50 wt% of tin (Sn). In addition, provided is a method for bonding a rotary target for sputtering, using the bonding composition for a rotary target. According to the present invention, production cost for a rotary target for sputtering is significantly reduced.

Description

Bonding composition of sputtering rotary target and bonding method of rotary target using same

The present invention relates to a bonding composition of a rotary target for sputtering and a method of bonding a rotary target using the same, and more particularly, a structure that is easily available and cheap in the market when bonding the target on the outer circumferential surface of the backing tube constituting the rotary target for sputtering. The present invention relates to a bonding composition for sputtering rotary targets, and a bonding method of a rotary target using the same, in which a component is bonded through a bonding composition having a predetermined composition ratio.

In general, sputtering refers to a technique of attaching a film to a target surface in the form of a film, and sputtering is a thin film or a thick film by evaporating a solid in a high vacuum state to make an electronic circuit in a ceramic or semiconductor material. It is used when forming).

In other words, the sputtering as described above is ionized by applying a DC voltage between the substrate and the target (target material Cr, Ti, etc.) while introducing an inert gas (mainly argon gas) in a vacuum. The target material is formed on a substrate by colliding the argon with the target. In addition, it is possible to perform reactive sputtering (ITO · Sn, and so on) by loading a O 2 · N 2 gas of a very small amount, such as argon gas.

The sputtering as described above is classified by dry plating method and is plated without exposing the object to be coated to liquid or high temperature gas. Therefore, it is used for the board | plate material and molded article of various base materials (resin, glass, ceramic, etc.), for example as electrode shielding and masking.

On the other hand, as described above, a rotary target is used as an electrode for applying a high voltage in a sputtering apparatus for coating or thin film plating. The sputtering rotary target is composed of a cylindrical target consisting of a cylindrical backing tube and the outer peripheral surface of the backing tube is coupled to the target is coupled on the outer peripheral surface of the backing tube by fusion bonding of indium (Indium) is integrated.

Indium, as mentioned above, is a rare metal element belonging to group 13 of the boron group of the periodic table. It was called indium because it was offered.

Indium, as described above, is used for welding sealing between glass, metal, quartz, ceramic, and marble because it has a unique property of melting or sticking to clean glass and other surfaces when melted. It is also used for painting aircraft engine bearings because it increases corrosion resistance and forms an adhesive oil film on the surface.

However, as described above, indium, which allows the cylindrical target to be melt-bonded on the outer circumferential surface of the cylindrical backing tube constituting the sputtering rotary target, belongs to a rare metal and is expensive, resulting in the manufacture of the rotary target for sputtering. There is a problem that an increase in production costs will follow.

In addition, as described above, indium, which allows the cylindrical target to be melt-bonded on the outer circumferential surface of the cylindrical backing tube constituting the sputtering rotary target, is a rare metal, and since its supply is not large, the market price is very unstable. There is a problem with supply and demand.

The present invention has been made to solve the problems of the prior art, it is easy to obtain a bonding composition for bonding and bonding the target on the outer circumferential surface of the backing tube and melted through the bonding composition formed by mixing two or more inexpensive metals at a constant composition ratio An object of the present invention is to provide a bonding composition for a sputtering rotary target and a method of bonding a rotary target using the same, by which indium can be replaced by being able to bind.

In addition, the technique according to the present invention is easy to obtain a bonding composition for bonding the target on the outer circumferential surface of the backing tube, it is possible to melt-bond through the bonding composition formed by mixing two or more inexpensive metals in a predetermined composition ratio rotary sputtering The purpose is to lower the production cost of the target.

In addition, the technology according to the present invention is easy to obtain a bonding composition for bonding the target on the outer circumferential surface of the backing tube, it is possible to stably melt material through the bonding composition formed by mixing two or more inexpensive metals in a certain composition ratio The purpose is to enable the supply and demand of.

The present invention configured to achieve the above object is as follows. That is, the bonding composition of the sputtering rotary target according to the present invention has a cylindrical shape on the outer circumferential surface of the backing tube formed of a cylindrical shape of the sputtering rotary target for applying a high voltage while being rotatably installed in the sputtering chamber and being rotated by the driving motor. In the sputtering rotary target bonding composition for joining the target of the sputtering, the sputtering rotary target bonding composition for splicing the target on the outer circumferential surface of the backing tube is 50 to 54% by weight of bismuth and 46 to 50% by weight of tin (Sn). The composition is mixed at the rate of%.

In addition, the sputtering rotary target bonding composition according to the present invention is rotatably installed in the sputtering chamber is a cylindrical on the outer peripheral surface of the backing tube formed in the cylindrical shape of the sputtering rotary target for applying a high voltage while being rotated by the drive of the drive motor In the sputtering rotary target bonding composition for bonding the target of the target, the rotary target bonding composition for adhering the target on the outer circumferential surface of the backing tube is 49 to 54% by weight of bismuth, 45 to 50% by weight of tin (Sn) and Indium (In) or silver (Ag) may be mixed in a proportion of 1 to 6% by weight.

In the composition of the present invention as described above, the bonding composition of bismuth and tin (Sn) or the bonding composition of bismuth and tin (Sn) and indium (In, or silver (Ag)) through melting When the target is adhered on the outer circumferential surface of the tube, the heating temperature of the backing tube and the target is more preferably heated to 271.3 ° C or higher.

And, in the configuration of the present invention as described above, the material of the backing tube is made of titanium (Ti) or stainless steel (S / S), but if the material of the backing tube is titanium (Ti), the target is ITO, AZO, ZNO A target of one selected ceramic material or a target of metal material having a low coefficient of thermal expansion selected from molybdenum (Mo), molybdenum (MoTi), titanium tungsten (TiW), molybdenum tungsten (MoW), and silicon (Si) is combined. When the backing tube is made of stainless steel (S / S), the coefficient of thermal expansion of one selected from titanium (Ti), aluminum (Al), copper (Cu), silver (Ag), aluminum silicon (AlSi), and chromium (Cr) The target of the high metal material is combined.

A sputtering rotary target bonding method, which is another feature of the technology according to the present invention, includes: (a) heating a backing tube and a target constituting a sputtering rotary target to a predetermined temperature or more; (b) applying a surface treatment agent on a powder to the outer circumferential surface of the heated backing tube and the inner circumferential surface of the target through the step (a) to melt the surface through a brush or an ultrasonic surface treatment machine; (c) cooling the surface-treated backing tube and the target through step (b); (d) engaging the target on the outer circumferential surface of the backing tube cooled through the step (c) and positioning the target vertically on the surface plate; (e) heating the backing tube and the target positioned on the surface plate to a predetermined temperature or more through the step (d); (f) allowing the vibration to occur while the backing tube and the target are heated to a predetermined temperature or more through the step (e); (g) The rotary target bonding composition is melted and injected into the space between the outer circumferential surface of the backing tube and the target inner circumferential surface while heating and vibrating the backing tube and the target through the step (f) to uniform the molten rotary target bonding composition. Making a distribution; And (h) melt-injecting the rotary target bonding composition through step (g) to achieve a uniform distribution by vibration, and then cooling and stopping heating and vibration.

As described above, the bonding method of the rotary target according to the present invention is made of titanium (Ti) or stainless steel (S / S), but the backing tube is made of titanium (Ti) in the case of ITO, AZO, ZnO. Bonding a target made of any one of ceramic materials or a target made of metal having a low coefficient of thermal expansion selected from molybdenum (Mo), molybdenum (MoTi), titanium tungsten (TiW), molybdenum tungsten (MoW), and silicon (Si) On the other hand, in the case of the stainless steel (S / S) backing tube selected one of titanium (Ti), aluminum (Al), copper (Cu), silver (Ag), aluminum silicon (AlSi), chromium (Cr) It can be made of a configuration for bonding the target of the metal material having a high coefficient of thermal expansion.

Meanwhile, in the aforementioned method of joining the rotary target, a target made of any one ceramic material of ITO, AZO, or ZnO, or molybdenum (Mo), molybdenum (MoTi), or titanium tungsten (Titanium (Ti) backing tube corresponding to the backing tube) The surface treatment of the target inner circumferential surface during the joining of a target of a metal material having a low coefficient of thermal expansion selected from TiW), molybdenum (MoW), and silicon (Si) is surface treated first and second, and the surface treatment of the outer circumferential surface of the backing tube May be configured to perform a primary surface treatment.

Then, the surface treatment process of the target in the surface treatment process of the backing tube outer circumferential surface and the target inner circumferential surface in the step (b) of the bonding method according to the present invention described above is a powder surface on the inner circumferential surface of the target heated through the step (a) Primary surface treatment by applying a treatment agent and rubbing it through a brush or an ultrasonic surface treatment machine during melting; And a second surface treatment by applying a surface treatment agent on a powder to each of the inner surface of the target surface treated by primary treatment, followed by rubbing through a brush or an ultrasonic surface treatment agent.

In the above-described configuration, the surface treatment agent in the first surface treatment of the target inner circumferential surface is a mixture of tin (Sn) and indium (In) on the powder, but the weight of indium (In) does not exceed 40% by weight of the total weight. It can be mixed in the range, the surface treatment agent in the secondary surface treatment of the target inner peripheral surface is made of a mixture of tin (Sn) and silver (Ag) and titanium (Ti) on the powder of silver (Ag) and titanium (Ti) The weight may be mixed within the range of 5% by weight or less of the total weight. At this time, the surface treatment agent on the outer circumferential surface of the backing tube is made of a mixture of tin (Sn), silver (Ag) and titanium (Ti), the weight of silver (Ag) and titanium (Ti) is less than 5% by weight of the total weight It can be mixed within a range.

In addition, in the configuration according to the invention corresponding to the backing tube of stainless steel (S / S) material titanium (Ti), aluminum (Al), copper (Cu), silver (Ag), aluminum silicon (AlSi), chromium ( The surface treatment of the backing tube outer circumferential surface and the target inner circumferential surface at the time of joining the metal target having a high coefficient of thermal expansion selected from Cr) may be composed of a surface treatment for each primary.

In the composition according to the present invention as described above, the surface treatment agent during the surface treatment of the backing tube outer peripheral surface and the target inner peripheral surface is made of a mixture of tin (Sn), silver (Ag) and titanium (Ti) on the powder (Ag) and titanium The weight of (Ti) can be mixed within the range of 5% by weight or less of the total weight.

In addition, the heating temperature of the backing tube and the target in the step (a) of the configuration according to the present invention as described above is more preferably heated to 231.9 ℃ or more melting point of the tin (Sn).

And, in the step (g) of the configuration according to the present invention, the rotary target bonding composition may be mixed at a ratio of 50 to 54% by weight of bismuth and 46 to 50% by weight of tin (Sn) or bismuth (Bismuth) 49 to 54 wt%, 45-50 wt% of tin (Sn) and 1-6 wt% of indium (In) or silver (Ag).

Further, the heating temperature of the backing tube and the target in the process of step (e) according to the present invention is more heated to 271.3 ℃ or more so that the molten state of the molten bonding composition introduced in the process of step (g) can be maintained Good.

According to the technique of the present invention, it is easy to obtain a bonding composition for bonding and bonding a target on the outer circumferential surface of the backing tube, and indium (Indium) may be melt-bonded through a bonding composition formed by mixing two or more inexpensive metals at a predetermined composition ratio. Can be replaced.

In addition, the technique according to the present invention is easy to obtain a bonding composition for bonding and bonding the target on the outer circumferential surface of the backing tube, it is possible to significantly reduce the production cost of the sputtering rotary target by using a mixture of two or more cheap metal at a constant composition ratio have.

In addition, the technique according to the present invention has the advantage that it is easy to obtain a bonding composition for bonding and bonding the target on the outer circumferential surface of the backing tube, and the supply of a stable material is possible by mixing two or more inexpensive metals at a predetermined composition ratio.

1 is a perspective view showing a sputtering rotary target applied technology according to the present invention.

2 is a cross-sectional view showing a sputtering rotary target according to the present invention.

Figure 3 is a block diagram showing a method of joining a rotary target using the bonding composition of the rotary target for sputtering according to the present invention.

      Figure 4 is a block diagram showing the surface treatment in the bonding method of the rotary target using the bonding composition of the rotary target for sputtering according to the present invention.

Hereinafter, the bonding composition of the rotary target for sputtering and the bonding method of the rotary target using the same according to a preferred embodiment of the present invention will be described in detail.

1 is a perspective view showing a sputtering rotary target applied technology according to the present invention, Figure 2 is a cross-sectional configuration showing a sputtering rotary target according to the present invention, Figure 3 is a bonding composition of the rotary target for sputtering according to the present invention Figure 4 is a block diagram showing a bonding method of the rotary target, Figure 4 is a block diagram showing the surface treatment in the bonding method of the rotary target using the bonding composition of the rotary target for sputtering according to the present invention.

1 to 4, sputtering rotary target bonding composition according to the present invention for bonding the target 120 is applied to the outer peripheral surface of the backing tube 110 constituting the sputtering rotary target 100 is applied In 130, bismuth and tin are mixed at a predetermined composition ratio.

The composition ratio of bismuth and tin in the rotary target bonding composition 130 for sputtering according to the present invention is 50 to 54% by weight of bismuth and 46 to 50% by weight of tin (Sn). It is mixed composition in proportion. At this time, the bismuth (Bismuth) 50 to 54% by weight and the tin (Sn) in a proportion of 46 to 50% by weight of the bonding composition 130 according to the present invention is a molten state of the backing tube 110 and the outer peripheral surface and the target ( 120) It is put in the space between the inner circumference.

The sputtering rotary target bonding composition 130 for bonding the target 120 to which the high voltage is applied to the outer circumferential surface of the backing tube 110 constituting the sputtering rotary target 100 according to the present invention is bismuth. , Tin (Sn) and indium (In) or silver (Ag) may be mixed composition at a predetermined composition ratio.

The composition ratio of bismuth, tin (Sn), and indium (In) or silver (Ag) in the composition of the rotary target bonding composition 130 for sputtering according to the present invention is 49 to 54% by weight of bismuth (Bismuth), 45 to 50 wt% of tin (Sn) and 1 to 6 wt% of indium (In) or silver (Ag) may be mixed. At this time, the composition ratio of bismuth, tin (Sn) and indium (In) or silver (Ag) is 49 to 54% by weight of bismuth, 45 to 50% by weight of tin (Sn) and indium (In) or silver (Ag) The sputtering rotary target bonding composition 130 according to the present invention, which is mixed at a ratio of 1 to 6% by weight, is injected into a space between the outer circumferential surface of the backing tube 110 and the inner circumferential surface of the target 120 in a molten state. .

On the other hand, the process of bonding the target 120 is applied to the outer circumferential surface of the backing tube 110 through the bonding composition 130 according to the present invention configured as described above is a horizontal plate (not shown) The backing tube 110 is vertically positioned in the vertical direction, and then the target 120 is coupled to the outer circumferential surface of the backing tube 110 so that a predetermined space is formed between the outer circumferential surface of the backing tube 110 and the inner circumferential surface of the target 120. Position it.

Next, as described above, the target 120 is coupled to the outer circumferential surface of the backing tube 110 and positioned vertically to the surface plate. Then, the backing tube 110 and the target 120 are heated and vibrated while the backing tube ( The bonding composition 130 or bismuth (Bismuth), which is mixed at a ratio of 50 to 54% by weight of bismuth and 46 to 50% by weight of tin (Sn) in a predetermined space between the outer circumferential surface of the 110 and the inner circumferential surface of the target 120. ) 49 to 54% by weight, 45 to 50% by weight of tin (Sn) and 1 to 6% by weight of indium (In or silver (Ag)) were added in a molten state. After the uniform distribution by the vibration is made to stop the heating and vibration by cooling to enable the bonding of the target 120 on the outer peripheral surface of the backing tube (110).

Bismuth (Bismuth) constituting the bonding composition 130 according to the present invention is an element belonging to the nitrogen group of Group 15 of the periodic table, which is the most metallic but the least amount is present. Such bismuth has the largest diamagnetic property among all metals, the lowest thermal conductivity among metals except mercury, and is a hard, brittle, shiny and grainy crystal form.

Bismuth is a distinctive reddish-grey-white color that can be distinguished from other metals. It is often produced in the free state in nature and exists as sulfite lumber (Bi 2 S 3 ) and oxide oxide lumber (Bi 2 O 3 ). In addition, these metals are often obtained as by-products of the refining process, as they are often associated with tin, lead and copper ores. Pure bismuth is obtained by reducing sulfur by reacting oxides with carbon or roasting sulfides in the presence of char and metal iron. The melting point of bismuth is 271.3 deg. C and specific gravity is 9.747 g / cc (20 deg. C).

Meanwhile, tin (Sn) constituting the bonding composition 130 according to the present invention is a chemical element belonging to a carbon group of Group 14 on the periodic table. Such tin (Sn) is a soft, bluish silver-white metal. It is used as the alloy of bronze. In addition, tin (Sn) is widely used in plated steel barrels used for food containers, and metals and solders used in bearings. The melting point of this tin is 232 ° C.

Indium (In) constituting the bonding composition 130 according to the present invention is that in 1863, Ferdinand Like and Theodor Richter discovered a bright silver-white luster in zinc ore and produced a unique indigo spectral line. It was named indium. The indium (In) is softer than lead, superior in plasticity, scratched with nails, and can be transformed into any form. In addition, as with tin, there is a sharp sound when bending pure metal. It is as rare as silver and averages about 0.1 ppm of crustal weight. In nature it is produced in a bonded state and is obtained as a by-product of many minerals, especially zinc and lead minerals.

Indium (In) is stable in air at room temperature, but glows blue violet in red and becomes In 2 O 3 , a yellow oxide. Soluble in mineral acids, but not affected by potassium hydroxide or boiling water. It bonds directly when heated in the presence of halogen or sulfur. A few indium compounds, such as halides, have been made, but usually trivalent compounds are stable. Indium (In) reacts with major Group 15 elements to form compounds with semiconductor properties (indium phosphide, indium arsenide, indium antimonide). The melting point of this indium is 156.61 ° C.

In addition, silver (Ag) used instead of indium (In) in the composition of the bonding composition which concerns on this invention is a well-known metal element from a long time, and is a kind of precious metal like gold, iridium, palladium, platinum, etc. Silver ornaments and decorations were found in the tomb of the emperor in 4000 BC. By 800 BC, gold and silver were used as currency in many countries between the Indus and Nile rivers, and later in Roman times the Romans made great advances in silver metallurgy, and in many places silver smelting plants were built to Gained or made silver ornaments. Moreover, centuries later, some gold or silver ores were found to form mercury and amalgam, which led to the use of the patio process. The melting point of this silver (Ag) is 961.3 ℃.

In the composition of the bonding composition 130 according to the present invention as described above, the bonding composition 130 of bismuth and tin (Sn) or bismuth (Bismuth) and tin (Sn) and indium (In, or silver (Ag) When the bonding composition 130 of)) is bonded to the target 120 on the outer circumferential surface of the backing tube 110 through melting, the heating temperature of the backing tube 110 and the target 120 is heated to 271.3 ° C. or higher. Better.

On the other hand, the heating temperature of the above-described backing tube 110 and the target 120 to 271.3 ℃ or more is composed of the bismuth (Bismuth) and tin (Sn) or the bonding composition 130 or bismuth (Bismuth) and tin (Sn) And the bonding composition 130 made of indium (In or silver (Ag)) is melted and introduced between the backing tube 110 and the target 120 to maintain a molten state of the bonding composition 130 to some extent. It is to let. At this time, the temperature of heating the backing tube 110 and the target 120 is 271.3 ℃ is the melting point of bismuth (Bismuth).

And, the material of the backing tube 110 in the configuration of the present invention as described above is made of titanium (Ti) or stainless steel (S / S), but also the material of the target 120 according to the material of the backing tube 110 Will be different. That is, when the material of the backing tube 110 is titanium (Ti), the target 120 is a target of one ceramic material selected from ITO, AZO, and ZNO or molybdenum (Mo), molybdenum (MoTi), and titanium tungsten (TiW). ), A molybdenum (MoW), silicon (Si) selected from the target of the metal material having a low coefficient of thermal expansion is bonded. On the other hand, when the material of the backing tube 110 is stainless steel (S / S), titanium (Ti), aluminum (Al), copper (Cu), silver (Ag), aluminum silicon (AlSi), chromium (Cr) The target 120 of the metal material having a high coefficient of thermal expansion selected from among is coupled.

On the other hand, the bonding method of the rotary target according to the present invention using the bonding composition 130 is configured as described above (a) the backing tube 110 and the target 120 constituting the rotary target 100 for sputtering constant A surface treatment agent (not shown) on a powder is applied to the outer circumferential surface of the backing tube 110 and the inner circumferential surface of the target 120 heated through the step (S100) and (b) step (a). The surface treatment of the backing tube 110 and the target 120 by cooling the surface treatment through the process (S110), (c) step (b) process (S110) by rubbing through a brush or an ultrasonic surface treatment in the middle of coating and melting. Process (S120), (d) process (c) combining the target 120 on the outer circumferential surface of the cooling backing tube 110 through the step (S120) to position in the vertical direction on the surface plate (not shown) (S130), (e) working the backing tube 110 and the target 120 is placed on the surface through the step (d) process (S130) The process of heating the backing tube 110 and the target 120 to a predetermined temperature or more through a process (S140) and (f) step (e) (S140) of heating to a temperature or more (S150). , (g) heating and vibrating the backing tube 110 and the target 120 through the step (f) process (S150) while the rotary target bonding composition 130 is formed on the outer circumferential surface of the backing tube 110 and the target 120. Rotary target bonding composition through the process (S160) and (h) step (g) process (S160) to achieve a uniform distribution of the rotary target bonding composition 130 melted by vibration by melting the space between the inner circumferential surface Melting the 130 to make a uniform distribution by vibration, and then stop the heating and vibration is made of a configuration of cooling (S170).

In the rotary target bonding method according to the present invention configured as described above, the surface treatment agent is applied differently according to the material of the backing tube 110 and the target 120 as described above. That is, as described above, the material of the backing tube 110 is made of titanium (Ti) or stainless steel (S / S), but in the case of the backing tube 110 of titanium (Ti), ITO, AZO, or ZnO. Target 120 made of any one ceramic material or a target of a metal material having a low coefficient of thermal expansion selected from molybdenum (Mo), molybdenum (MoTi), titanium tungsten (TiW), molybdenum tungsten (MoW), and silicon (Si) On the other hand, when the backing tube 110 is made of stainless steel (S / S), titanium (Ti), aluminum (Al), copper (Cu), silver (Ag), and aluminum silicon (AlSi) , Chromium (Cr) is made of a configuration for bonding the target 120 of the metal material having a high coefficient of thermal expansion.

Meanwhile, in the above-described method of joining the rotary target, the target 120 made of any one of ITO, AZO, and ZnO ceramic material, or molybdenum (Mo), or molybdenum (corresponding to the backing tube 110 made of titanium (Ti)) may be used. The surface treatment of the inner circumferential surface of the target 120 is performed in the first and second stages when the target 120 is bonded to a metal having a low coefficient of thermal expansion selected from MoTi), titanium tungsten (TiW), molybdenum (MoW), and silicon (Si). Surface treatment over the surface, and the surface treatment of the outer peripheral surface of the backing tube 110 is composed of a first surface treatment.

In other words, the target 120 or molybdenum (Mo), molybdenum (MoTi), or titanium tungsten (TiW) made of any one ceramic material of ITO, AZO, or ZnO corresponding to the backing tube 110 made of titanium (Ti) The surface treatment of the inner circumferential surface of the target 120 during the bonding of the target 120 of the metal material having a low coefficient of thermal expansion selected from one of molybdenum (MoW) and silicon (Si) is performed twice, whereas the backing tube 110 The surface treatment of the outer circumferential surface is performed only once.

The surface treatment of the inner circumferential surface of the target 120 when the target 120 made of a ceramic material or the target 120 made of a metal having a low coefficient of thermal expansion is bonded to the backing tube 110 made of titanium (Ti). Applying the surface treatment agent on the powder to the inner peripheral surface of the heated target 120 through the process (S100) and the primary surface treatment by rubbing through a brush or an ultrasonic surface treatment (S110-1) and the first surface treatment The second surface treatment is performed by applying a surface treatment agent on a powder to the target 120 inner peripheral surface and then rubbing it through a brush or an ultrasonic surface treatment machine (S110-2).

Meanwhile, as described above, when the target 120 made of a ceramic material or the target 120 made of a metal having a low thermal expansion coefficient is bonded to the backing tube 110 made of titanium, the surface treatment agent is formed on the inner circumferential surface of the target 120. The primary surface treating agent consists of a mixture of tin (Sn) and indium (In) on a powder, but is mixed within a range in which the weight of indium (In) does not exceed 40% by weight of the total weight. In addition, during the second surface treatment of the inner circumferential surface of the target 120, the surface treating agent is a mixture of tin (Sn), silver (Ag), and titanium (Ti) on a powder, and the weight of silver (Ag) and titanium (Ti) is total. It mixes in the range of 5 weight% or less of weight.

As described above, when the target 120 made of a ceramic material or the target 120 made of a metal having a low coefficient of thermal expansion corresponding to the backing tube 110 made of titanium (Ti), the surface treatment agent of the target 120 is as described above. On the contrary, the backing tube 110 is surface treated only once, but the surface treatment agent on the outer circumferential surface of the backing tube 110 is made of a mixture of tin (Sn), silver (Ag), and titanium (Ti) on a powder. And the weight of titanium (Ti) are mixed within the range of 5% by weight or less of the total weight.

On the other hand, titanium (Ti), aluminum (Al), copper (Cu), silver (Ag), aluminum silicon (AlSi), corresponding to the backing tube 110 made of stainless steel (S / S) as described above, The surface treatment of the outer circumferential surface of the backing tube 110 and the inner circumferential surface of the target 120 during the joining of the metal target 120 having a high coefficient of thermal expansion selected from chromium (Cr) is composed of a surface treatment for each primary backing tube. When the surface treatment of the outer peripheral surface and the inner peripheral surface of the target 120, the surface treatment agent is made of a mixture of tin (Sn), silver (Ag) and titanium (Ti) on the powder, the weight of silver (Ag) and titanium (Ti) It is mixed in the range of 5 weight% or less of total weight.

As described above, the method for bonding the target 120 on the outer circumferential surface of the backing tube 110 through the bonding composition 130 according to the present invention will be described in detail as follows. First, as shown in FIG. 3, the backing tube 110 and the target 120 constituting the sputtering rotary target 100 are heated to a predetermined temperature or more through the process of step (a) (S100).

As described above, in step (a) of heating the backing tube 110 and the target 120 constituting the sputtering rotary target 100 to a predetermined temperature or more (S100), the backing tube 110 and the target 120 As a part of the process for removing the oxide film generated on the surface of the), it is a heating process for melting the surface treatment agent applied in the step (b) step (S110).

On the other hand, as described above, the heating temperature of the backing tube 110 and the target 120 constituting the sputtering rotary target 100 through the process (S100) of step (a) is the process of the subsequent step (b) ( S110 is heated to 231.9 ° C. or more, which is the melting point of tin (Sn), to allow melting of the surface treatment agent applied. Thus, since the melting point of tin (Sn) is higher than that of indium (In), it is better to heat it to 231.9 ° C or more, which is the melting point of tin (Sn).

On the other hand, even when the surface treatment agent is made of tin (Sn), silver (Ag), and titanium (Ti), the heating temperature of the backing tube 110 and the target 120 is heated to 231.9 ° C or more, which is the melting point of tin (Sn). To melt the surface treatment agent.

Next, the backing tube 110 and the target 120 is heated to 231.9 ° C. or more, which is the melting point of tin (Sn) d through the process of step (a), and then, as shown in FIGS. 3 and 4. The outer circumferential surface of the backing tube 110 and the target (using a brush or an ultrasonic surface treatment agent) are applied to the outer surface of the heated backing tube 110 and the inner circumferential surface of the target 120 by applying a surface treatment agent on a powder. Surface treatment of each of the inner circumferential surface 120 (S110).

On the other hand, in the step (b) step (S110) as described above, the target 120 made of any one ceramic material of ITO, AZO, ZnO corresponding to the backing tube 110 of titanium (Ti) material as described above ) Or the inner circumferential surface of the target 120 when joining the target 120 of a metal material having a low coefficient of thermal expansion selected from molybdenum (Mo), molybdenum (MoTi), titanium tungsten (TiW), molybdenum tungsten (MoW), and silicon (Si) Surface treatment of the step (a) by applying a surface treatment agent in the powder on the inner peripheral surface of the target 120 heated in the step (S100) to melt the first surface treatment by rubbing through a brush or an ultrasonic surface treatment (S110-) 1) and the first surface-treated target (120) is applied to each of the inner surface of the powder surface treatment agent is melted by applying a second surface treatment by rubbing through a brush or an ultrasonic surface treatment process (S110-2).

In the surface treatment of the target 120 as described above, the primary surface treatment agent is a mixture of tin (Sn) and indium (In) on a powder, but the weight of indium (In) does not exceed 40% by weight of the total weight. It is mixed within the range, the surface treatment agent in the second surface treatment of the inner peripheral surface of the target 120 is made of a mixture of tin (Sn), silver (Ag) and titanium (Ti) on the powder (Ag) and titanium (Ti) Is mixed within the range of 5% by weight or less of the total weight.

In addition, the backing tube 110 is surface-treated only once as described above when the backing tube 110 is bonded to a metal 120 having a low thermal expansion coefficient corresponding to the titanium backing tube 110 as described above. (110) The surface treatment agent on the outer circumferential surface is made of a mixture of tin (Sn), silver (Ag), and titanium (Ti) on a powder, and the weight of silver (Ag) and titanium (Ti) is in the range of 5% by weight or less of the total weight. Are mixed within.

On the other hand, titanium (Ti), aluminum (Al), copper (Cu), silver (Ag), aluminum silicon (AlSi), corresponding to the backing tube 110 made of stainless steel (S / S) as described above The surface of the backing tube 110 and the target 120 when the metal target 120 of the selected one selected from chromium (Cr) having a high thermal expansion coefficient is bonded to the outer peripheral surface of the ingot backing tube 110 and the target 120 only once. The surface treatment agent on the inner circumferential surface is composed of a mixture of tin (Sn), silver (Ag), and titanium (Ti) on a powder, and the weight of silver (Ag) and titanium (Ti) is mixed within a range of 5% by weight or less of the total weight. It is done.

As described above, the surface treatment agent is applied to the outer circumferential surface of the heated backing tube 110 and the inner circumferential surface of the target 120 to apply and melt the surface treatment agent in powder. (B) Irregularly applied to the outer circumferential surface of the backing tube 110 and the inner circumferential surface of the target 120 by the ultrasonic surface treatment, and of course, the oxide film of the outer circumferential surface of the backing tube 110 and the inner circumferential surface of the target 120 is removed by a brush or ultrasonic surface treatment.

In other words, the surface treatment agent melted through the process (S110) of the step (b) as described above to be applied to the outer peripheral surface of the backing tube 110 and the inner circumferential surface of the target 120 by the brush or ultrasonic surface treatment machine to be applied irregularly In the process, the oxide film on the outer circumferential surface of the backing tube 110 and the inner circumferential surface of the target 120 is removed.

Therefore, in the process of dispersing the surface treatment agent melted through the process (S110) of the step (b) on the outer circumferential surface of the backing tube 110 and the inner circumferential surface of the target 120 irregularly applied to the outer circumferential surface and the target of the backing tube 110 (120) When the target 120 is bonded to the outer circumferential surface of the backing tube 110 through the bonding composition 130 by removing the oxide film of the inner circumferential surface so that the bonding can be made smoothly.

Process (S120) of step (c) according to the present invention is a process (S120) of cooling the backing tube 110 and the target 120, the process (S120) of this step (c) is shown in FIG. The surface of the outer circumferential surface of the backing tube 110 and the surface of the inner circumferential surface of the target 120 through the step (b) of step (b) and then the backing tube 110 and the target 120 to cool the backing tube 110 The outer surface and the inner surface of the inner surface of the target 120, the molten surface treatment agent in a state of being applied to each other can be fixed.

In addition, the process (S120) of the step (c) as described above is heated in the process of surface treatment of the outer peripheral surface of the backing tube 110 and the inner peripheral surface of the target 120 through the process (S110) of the step (b) By cooling the tube 110 and the target 120 to combine the backing tube 110 and the target 120 through the following process to ensure the safety of the operator so that the work can be made smoothly.

Cooling in the cooling process of step (c) step (S120) as described above is better to cool through natural cooling at room temperature in order to prevent a sudden change of the melt-coated surface treatment agent.

Next, the process of step (d) is a process (S130) of combining the backing tube 110 and the target 120 on the surface plate (not shown) to the correct position (S130) of the step (d) As shown in FIG. 3, the target 120 is coupled on the outer circumferential surface of the backing tube 110 cooled through the process S120 of step (c) to be positioned vertically on the surface plate.

As described above, the outer circumferential surface of the backing tube 110 in the process of coupling the target 120 on the outer circumferential surface of the backing tube 110 cooled through the step (c) in the vertical direction on the surface plate. And a space into which the bonding composition 130 is injected is formed between the inner circumferential surface of the target 120.

In other words, when the inner diameter of the target 120 constituting the present invention is formed to be about 2 mm larger than the outer diameter of the backing tube 110 to couple the target 120 on the outer circumferential surface of the backing tube 110 to position it. A space of about 1 mm is formed between the outer circumferential surface of the backing tube 110 and the inner circumferential surface of the target 120.

The process of step (e) according to the present invention is a process (S140) for heating the backing tube 110 and the target 120 positioned on the surface plate, the process (S140) of this step (e) is shown in FIG. As shown in the step (d) through the step (S130) of the backing tube 110 and the target 120 positioned on the surface plate heated to a predetermined temperature or more, the molten bonding composition 130 is introduced in the subsequent process It is a process for maintaining the molten state of.

As described above, the heating temperature of the backing tube 110 and the target 120 positioned on the surface plate in the process (S140) of step (e) is 271.3 ° C, which is the melting point of bismuth (Bismuth) constituting the bonding composition 130. It will be suitable to heat the above range.

Next, the process of step (f) according to the present invention is a process of vibrating through indirect vibration of the backing tube 110 and the target 120 through the surface plate or direct vibration of the backing tube 110 and the target 120 ( In step S150, the process S150 of step f is performed by heating the backing tube 110 and the target 120 to a predetermined temperature or more through the process S140 of step e as shown in FIG. 3. Make sure there is a vibration in the middle.

As described above, the process of allowing vibration to occur while heating the backing tube 110 and the target 120 at a predetermined temperature or more through the process (S150) of the step (f) is performed by a bonding composition (melted in a subsequent step ( Maintaining the molten state of 130, as well as to ensure a uniform distribution of the molten bonding composition (130).

On the other hand, the vibration in the process (S150) of the step (f) to make a vibration while heating the backing tube 110 and the target 120 above a predetermined temperature as described above so that the vibration can be made through the air vibrator In addition, the vibration may also be made through ultrasonic vibration. At this time, the surface plate may be rotated instead of the vibration in the process (S150) of step (f).

The process of step (g) constituting the present invention is a process of melt-injecting the bonding composition 130 into the space between the outer circumferential surface of the backing tube 110 and the inner circumferential surface of the target 120 is heated and vibrated (S160), The process (S160) of the step (g) is a backing tube that is heated and vibrated (or rotated) through the process (S140) of step (e) and the process (S150) of step (f) as shown in FIG. The bonding composition 130 is injected into the space between the 110 and the target 120 in a molten state.

In other words, when the bonding composition 130 is injected into the space between the backing tube 110 and the target 120 in a molten state as in step (g) configured as described above (S160), The bonding composition in which the backing tube 110 and the target 120 are melted and heated (or rotated) through the process (S140) of the step (e) and the process (S150) of the step (f). 130 is uniformly distributed in the space between the backing tube 110 and the target 120.

In the process (S160) of the step (g) as described above, the bonding composition 130 is mixed with bismuth and tin (Sn) or bismuth (Bismuth), tin (Sn) and indium (In, or silver ( Ag)). In this case, the composition ratio of the bonding composition 130 is 50 to 54% by weight of bismuth and 46 to 50% by weight of tin (Sn), or 49 to 54% by weight of bismuth (Bismuth) and tin (Sn) 45 The composition may be mixed at a ratio of about 50 wt% and 1 to 6 wt% of indium (In) or silver (Ag). The bonding composition 130 thus formed is injected into the space between the outer circumferential surface of the backing tube 110 and the inner circumferential surface of the target 120 in a molten state.

On the other hand, the bismuth (Bismuth) of the bonding composition 130, as described above is expanded by about 3 to 3.5% when solidified in the molten state. In the present invention, the bonding force between the backing tube 110 and the target 120 is better through the pacing force of bismuth (Bismuth) that expands when solidified in the molten state.

Next, the process of step (h) according to the present invention by cooling the bonding composition 130 melt-injected into the space between the backing tube 110 and the target 120, the bonding of the backing tube 110 and the target 120 This is a process (S170) to be made, the process (S170) of this step (h) is shown in Figure 3 of heating and vibration (or rotation) for a predetermined time of the melt-injected bonding composition 130 The heating and vibration (or rotation) is stopped in a uniform distribution state, and then the cooling of the melt-inserted bonding composition 130 can be performed.

Therefore, as described above, the vibration (or rotation) in the state in which the bonding composition 130 is melt-injected into the space between the outer circumferential surface of the backing tube 110 and the inner circumferential surface of the target 120 through the step (S160). By uniformly distributing the bonding composition 130 by the cooling step in the state in which the heating and vibration is stopped as in the next step (h) step (S170) is solidified of the melt-injected bonding composition 130.

On the other hand, the cooling through the process (S170) of the step (h) as described above is such that the melt-injected bonding composition 130 is solidified by cooling through natural cooling at room temperature so that the cooling can be made naturally cooled and fixed without a sudden change Will be better.

As described above, the technique according to the present invention may replace indium, which is a rare metal and expensive by bonding the backing tube 110 and the target 120 through the bonding composition 130, thereby resulting in a rotary The production cost of the target 100 can be lowered, and there is an advantage that stable supply and demand of the bonding composition 130 is possible.

The present invention is not limited to the above embodiments, and various modifications can be made within the scope of the technical idea of the present invention.

The present invention can be used in the bonding composition of the rotary target for sputtering and the bonding method thereof.

Claims (16)

  1. A sputtering rotary target bonding composition in which a cylindrical target is joined to an outer circumferential surface of a cylindrical backing tube of a sputtering rotary target, which is rotatably installed in a sputtering chamber and is rotated by driving of a driving motor, to apply a high voltage.
          The sputtering rotary target bonding composition which allows the target to be bonded on the outer circumferential surface of the backing tube is mixed composition of 50 to 54% by weight of bismuth and 46 to 50% by weight of tin (Sn). Rotary target bonding composition for sputtering.
  2. A sputtering rotary target bonding composition in which a cylindrical target is joined to an outer circumferential surface of a cylindrical backing tube of a sputtering rotary target, which is rotatably installed in a sputtering chamber and is rotated by driving of a driving motor, to apply a high voltage.
          The rotary target bonding composition for adhering the target to the outer circumferential surface of the backing tube may include 49 to 54% by weight of bismuth, 45 to 50% by weight of tin (Sn), and 1 to 1% of indium (In) or silver (Ag). A rotary target bonding composition for sputtering, wherein the composition is mixed at a ratio of 6% by weight.
  3.      The method of claim 1 or 2, wherein the bonding composition of bismuth and tin or the bonding composition of bismuth and tin and indium (In or silver) is melted. Sputtering rotary target bonding composition, characterized in that for heating the target temperature on the outer peripheral surface of the backing tube through the heating temperature of the backing tube and the target is 271.3 ℃ or more.
  4.       According to claim 3, The material of the backing tube is made of titanium (Ti) or stainless steel (S / S) If the material of the backing tube is titanium (Ti) The target is selected from ITO, AZO, ZNO The target of a ceramic material or a metal material having a low coefficient of thermal expansion selected from molybdenum (Mo), molybdenum (MoTi), titanium tungsten (TiW), molybdenum tungsten (MoW) and silicon (Si) is combined, and the backing If the tube is made of stainless steel (S / S), the coefficient of thermal expansion of one selected from titanium (Ti), aluminum (Al), copper (Cu), silver (Ag), aluminum silicon (AlSi), and chromium (Cr) A sputtering rotary target bonding composition, characterized in that a high metal target is bonded.
  5. (a) heating the backing tube and the target constituting the sputtering rotary target to a predetermined temperature or more;
    (b) applying a surface treatment agent on a powder to the outer circumferential surface of the backing tube and the inner circumferential surface of the target heated through the step (a) to melt the surface through a brush or an ultrasonic surface treatment machine;
    (c) cooling the backing tube and the target surface-treated through step (b);
    (d) engaging the target on the outer circumferential surface of the backing tube cooled through the step (c) and positioning the target vertically on the surface plate;
    (e) heating the backing tube and the target positioned on the surface plate in a step (d) to a predetermined temperature or more;
    (f) a step of vibrating while the backing tube and the target are heated to a predetermined temperature or more through the step (e);
    (g) melting and rotating the rotary target bonding composition into the space between the outer circumferential surface of the backing tube and the target inner circumferential surface while heating and vibrating the backing tube and the target through the step (f). Allowing a uniform distribution of the composition; And
          (h) melt sputtering the rotary target bonding composition through step (g) to achieve a uniform distribution by vibration, and then splicing the rotary target sputtering comprising a step including cooling and stopping the vibration. Way.
  6.        According to claim 5, The material of the backing tube is made of titanium (Ti) or stainless steel (S / S), if the backing tube of titanium (Ti) material of any one of ITO, AZO, ZnO ceramic material A target or a target made of a metal material having a low coefficient of thermal expansion selected from molybdenum (Mo), molybdenum (MoTi), titanium tungsten (TiW), molybdenum tungsten (MoW), and silicon (Si), / S) in the case of the backing tube of a metal material having a high coefficient of thermal expansion selected from titanium (Ti), aluminum (Al), copper (Cu), silver (Ag), aluminum silicon (AlSi), chromium (Cr) Joining method of sputtering rotary target characterized by joining a target.
  7.       The method of claim 6, wherein the target or molybdenum (Mo), molybdenum (MoTi), titanium tungsten (TiW), made of any one ceramic material of ITO, AZO, ZnO corresponding to the backing tube of titanium (Ti) The surface treatment of the target inner circumferential surface during the joining of the target of the metal material having a low coefficient of thermal expansion selected from molybdenum (MoW) and silicon (Si) is surface treated first and second, and the surface treatment of the outer circumferential surface of the backing tube A method for joining sputtering rotary targets, characterized by primary surface treatment.
  8. The surface treatment of the target in the surface treatment of the backing tube outer circumferential surface and the target inner circumferential surface in the step (b) comprises the step of applying a surface treatment agent on a powder to the inner circumferential surface of the target heated through the step (a). Rubbing through a brush or ultrasonic surface treatment in the middle of coating and melting; And
          Sputtering rotary target bonding method, characterized in that consisting of a step of rubbing the second surface treatment through a brush or an ultrasonic surface treatment in the middle of applying the surface treatment agent on the powder to each of the inner surface of the target surface treatment target.
  9.        The surface treatment agent of claim 8, wherein the surface treatment agent is a mixture of tin (Sn) and indium (In) on a powder, and the weight of indium does not exceed 40% by weight of the total weight. A sputtering rotary target bonding method, characterized in that mixed within the range.
  10.        10. The method of claim 9, wherein the surface treatment agent in the second surface treatment of the target inner peripheral surface is made of a mixture of tin (Sn), silver (Ag) and titanium (Ti) on the powder weight of silver (Ag) and titanium (Ti) The sputtering rotary target bonding method characterized by mixing in the range of 5 weight% or less of this total weight.
  11.        The surface treatment agent of the outer circumferential surface of the backing tube is made of a mixture of tin (Sn), silver (Ag) and titanium (Ti) on the powder, the weight of silver (Ag) and titanium (Ti) is A sputtering rotary target bonding method, characterized in that mixed within the range of 5% by weight or less.
  12.        According to claim 6, Corresponding to the backing tube of stainless steel (S / S) material of titanium (Ti), aluminum (Al), copper (Cu), silver (Ag), aluminum silicon (AlSi), chromium (Cr The surface treatment of the backing tube outer circumferential surface and the target inner circumferential surface during the bonding of a metal target having a high coefficient of thermal expansion selected from one of the above) is surface treatment for each of the first sputtering rotary target.
  13.       The surface treatment agent of claim 12, wherein the surface treatment agent is formed of a mixture of tin (Sn), silver (Ag), and titanium (Ti) on a powder during surface treatment of the outer circumferential surface of the backing tube and the target inner circumferential surface. The method of joining a sputtering rotary target, characterized in that the weight of is mixed within the range of 5% by weight or less of the total weight.
  14. The sputtering rotary according to any one of claims 5 to 13, wherein in the step (a), the heating temperature of the backing tube and the target is heated to 231.9 ° C or more, which is a melting point of tin (Sn). How to join the target.
  15.        15. The method of claim 14, wherein the rotary target bonding composition in the step (g) is 50 to 54% by weight of bismuth (Bismuth) and tin (Sn) 46 to 50% by weight of the mixed composition or bismuth (Bismuth) 49 to 54 A sputtering rotary target bonding composition, characterized in that the composition is mixed in a proportion of 1% by weight to 45% by weight, tin (Sn), and 1 to 6% by weight of indium (In) or silver (Ag).
  16. The method of claim 15, wherein the heating temperature of the backing tube and the target in the step (e) is heated to 271.3 ° C or more so that the molten state of the molten bonding composition introduced in the step (g) can be maintained Sputtering rotary target bonding method characterized in that.
PCT/KR2011/009016 2010-11-24 2011-11-24 Bonding composition for a rotary target for sputtering and bonding method of a rotary target using same WO2012070882A2 (en)

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KR20170005084A (en) * 2014-05-09 2017-01-11 어플라이드 머티어리얼스, 인코포레이티드 Shielding device for rotatable cathode assembly and method for shielding a dark space in a deposition apparatus
CN105331937B (en) * 2014-07-30 2018-04-13 合肥江丰电子材料有限公司 Target processing unit (plant) and processing method
CN105624627B (en) * 2016-03-14 2018-08-31 无锡舒玛天科新能源技术有限公司 Binding formula magnetron sputtering rotary target material and preparation method thereof

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EP0787818A1 (en) * 1996-01-31 1997-08-06 LEYBOLD MATERIALS GmbH Tin or tin base alloy sputtering target
EP0787819A1 (en) * 1996-01-31 1997-08-06 LEYBOLD MATERIALS GmbH Tin or tin base alloy sputtering target
US20070062809A1 (en) * 2005-09-21 2007-03-22 Soleras Ltd. Rotary sputtering target, apparatus for manufacture, and method of making
KR20080059281A (en) * 2005-10-03 2008-06-26 써멀 컨덕티브 본딩 인코포레이션 Very long cylindrical sputtering target and method for manufacturing
US20090250337A1 (en) * 2004-12-14 2009-10-08 W.C. Heraeus Gmbh Tubular target having a connecting layer arranged between the target tube and the carrier tube
WO2009151060A1 (en) * 2008-06-10 2009-12-17 東ソー株式会社 Cylindrical sputtering target and method for manufacturing the same

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EP0787818A1 (en) * 1996-01-31 1997-08-06 LEYBOLD MATERIALS GmbH Tin or tin base alloy sputtering target
EP0787819A1 (en) * 1996-01-31 1997-08-06 LEYBOLD MATERIALS GmbH Tin or tin base alloy sputtering target
US20090250337A1 (en) * 2004-12-14 2009-10-08 W.C. Heraeus Gmbh Tubular target having a connecting layer arranged between the target tube and the carrier tube
US20070062809A1 (en) * 2005-09-21 2007-03-22 Soleras Ltd. Rotary sputtering target, apparatus for manufacture, and method of making
KR20080059281A (en) * 2005-10-03 2008-06-26 써멀 컨덕티브 본딩 인코포레이션 Very long cylindrical sputtering target and method for manufacturing
WO2009151060A1 (en) * 2008-06-10 2009-12-17 東ソー株式会社 Cylindrical sputtering target and method for manufacturing the same

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WO2012070882A3 (en) 2012-09-27
CN103328682B (en) 2016-04-06
KR101341705B1 (en) 2013-12-16
KR20120055979A (en) 2012-06-01
WO2012070882A4 (en) 2012-11-15
TWI561654B (en) 2016-12-11
CN103328682A (en) 2013-09-25

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