KR20120040856A - A light emitting device and a light emitting device package - Google Patents

Abstract

PURPOSE: A light emitting device and a light emitting device package is provided to increase effective radiation area by etching only a light emitting structure region corresponding to a contact electrode part. CONSTITUTION: A light emitting structure(120) comprises a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. The first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer are laminated on a substrate. Contact electrodes(210) are touched with the first conductive semiconductor layer. A passivation layer(130) is arranged on the second conductive semiconductor layer and the active layer and between the contact electrodes. A first electrode(150) is formed on the contact electrodes.

Description

A light emitting device and a light emitting device package

The present invention relates to a light emitting device and a light emitting device package.

A light emitting diode (LED) is a kind of semiconductor device that transmits and receives a signal by converting electricity into infrared light or light using characteristics of a compound semiconductor.

Group III-V nitride semiconductors are spotlighted as core materials of light emitting devices such as light emitting diodes (LEDs) or laser diodes (LDs) due to their physical and chemical properties.

These light emitting diodes do not contain environmentally harmful substances such as mercury (Hg) used in existing lighting equipment such as incandescent lamps and fluorescent lamps, and thus have excellent eco-friendliness and have advantages such as long life and low power consumption. It is replacing them.

Embodiments provide a light emitting device capable of improving luminous efficiency and luminous intensity.

According to the embodiment

The light emitting device according to the embodiment may improve luminous efficiency and luminous intensity.

1 is a plan view of a light emitting device according to an embodiment.
FIG. 2 is a sectional view taken along the AA ′ direction of the light emitting device of FIG. 1.
3 is a cross-sectional view taken along the BB ′ direction of the light emitting device illustrated in FIG. 1.
4 to 8 show a light emitting device manufacturing method according to the embodiment.
9 shows a light emitting device according to another embodiment.
10 illustrates a light emitting device package according to an embodiment.
11 illustrates a lighting device including a light emitting device according to the embodiment.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. In the description of an embodiment, each layer, region, pattern or structure may be "under" or "under" the substrate, each layer, region, pad or pattern. In the case where it is described as being formed at, "up" and "under" include both "directly" or "indirectly" formed through another layer. do. In addition, the criteria for up / down or down / down each layer will be described with reference to the drawings.

In the drawings, dimensions are exaggerated, omitted, or schematically illustrated for convenience and clarity of illustration. In addition, the size of each component does not necessarily reflect the actual size. The same reference numerals denote the same elements throughout the description of the drawings. Hereinafter, a light emitting device, a method of manufacturing the same, and a light emitting device package according to embodiments will be described with reference to the accompanying drawings.

1 is a plan view of a light emitting device 100 according to an embodiment, FIG. 2 is a sectional view taken along the AA ′ direction of the light emitting device 100 shown in FIG. 1, and FIG. 3 is a light emitting device 100 shown in FIG. 1. ) Is a cross-sectional view in the BB 'direction.

1 to 3, the light emitting device 100 may include a substrate 110, a light emitting structure 120, a passivation layer 130, contact electrodes 142-1 to 142-8, and a first electrode. An electrode 150, a conductive layer 160, and a second electrode 165 are included.

The substrate 110 may be selected from the group consisting of sapphire substrate (Al ₂ O ₃ ), GaN, SiC, ZnO, Si, GaP, InP, Ga ₂ O ₃ , a conductive substrate, and GaAs. An uneven pattern may be formed on the upper surface of the substrate 110.

The light emitting structure 120 has a structure in which the first conductive semiconductor layer 122, the active layer 124, and the second conductive semiconductor layer 126 are sequentially stacked on the substrate 110. In this case, the first conductivity type may be n type and the second conductivity type may be p type, but is not limited thereto.

Between the substrate 110 and the light emitting structure 120, a layer or pattern using a compound semiconductor of Group 2 to Group 6 elements is, for example, a ZnO layer (not shown), a buffer layer (not shown), an undoped semiconductor layer (not shown). At least one of the layers may be formed. The buffer layer or the undoped semiconductor layer may be formed using a compound semiconductor of group III-V group elements, and the buffer layer may reduce the difference in lattice constant with the substrate 110, and the undoped GaN layer may not be doped. It may be formed of a system semiconductor.

The first conductivity type semiconductor layer 122 may be selected from a nitride based semiconductor layer, for example, InAlGaN, GaN, AlGaN, InGaN, AlN, InN, AlInN, and the like, and an n-type dopant (eg, Si, Ge, Sn, etc.) may be Can be doped.

The active layer 124 may be formed of a single or multiple quantum well structure, a quantum-wire structure, a quantum dot structure, or the like using a compound semiconductor material of a group III-V group element.

If the active layer 124 is formed of a quantum well structure, for example, a well having a composition formula of In _x Al _y Ga _{1 -x- y} N It may have a single or quantum well structure having a layer and a barrier layer having a compositional formula of In _a Al _b Ga _{1 -a- b} N ( _{0≤a≤1, 0≤b≤1, 0≤a} + b≤1). have. The well layer may be formed of a material having a band gap lower than the band gap of the barrier layer.

The second conductive semiconductor layer 126 may be selected from a nitride based semiconductor layer, for example, InAlGaN, GaN, AlGaN, InGaN, AlN, InN, AlInN, or the like, and may be a p-type dopant (eg, Mg, Zn, Ca, Sr, Ba) may be doped.

The contact electrodes 142-1 to 142-8 contact the first conductive semiconductor layer 122 through the second conductive semiconductor layer 126 and the active layer 124. One end of each of the contact electrodes 142-1 to 142-8 is in contact with the first conductivity type semiconductor layer 122, and the other end thereof is opened from the second conductivity type semiconductor layer 126.

The contact electrodes 142-1 to 142-8 may be formed of a conductive material such as Ti, Al, Al alloy, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Ag alloy, Au, Hf, Pt, It may be a material containing one or more materials or alloys, such as Ru and Au, the form may be a single layer or a multilayer.

In this case, an ohmic layer and / or a reflective electrode layer 210 may be inserted between each of the contact electrodes 142-1 to 142-8 and the first conductive semiconductor layer 122. For example, the ohmic layer is a material in ohmic contact with the first conductivity type semiconductor layer, and may be made of a conductive oxide film including ITO, Ni, Cr, Ti, Al, Pt, or Pd, and the reflective electrode layer may be formed of Ag, Al, or the like. , Rh, Ag-alloy, Al-alloy, Rh-alloy and the like.

The contact electrodes 142-1 to 142-8 are spaced apart from one side of the first pad part P1 and the other sides of the first contact electrodes 142-1 to 142-6 and the first pad part P1. Second contact electrodes 142-7 and 142-8 spaced apart from the second electrode. Here, the first pad part P1 refers to a part of the first electrode 150 disposed in the first pad area C in which the first pad 155 to be described later is formed.

1 includes six first contact electrodes 142-1 to 142-6 and two second contact electrodes 142-7 and 142-8, but the first contact electrodes 142-1 142-6) and the number of second contact electrodes 142-7 and 142-8 are not limited thereto.

For example, the number and area of the contact electrodes may be determined such that the area of the first conductivity-type semiconductor layer in ohmic contact with the contact electrodes corresponds to 10% of the total area of the first electrode 150.

In addition, the first contact electrodes 142-1 to 142-6 are disposed in a line and spaced apart from one side of the first pad part P1 in the first direction, and the second contact electrodes 142-7 and 142-8. The silver may be arranged in a line in the second direction to be spaced apart from the other side of the first pad portion (P1). The first direction and the second direction may be different directions, for example, the first direction and the second direction may be perpendicular to each other.

In addition, the first contact electrodes 142-1 to 142-8 may be spaced apart from each other, and some of the first contact electrodes 142-1 to 142-6 may have a first pad part. The first contact electrodes 142-1 to 142-6 are arranged in a line in a first direction from one side of P1, and the remaining 142-4 to 142-6 are finally arranged in a first direction. The first contact electrode 142-3 may be arranged in a line in a second direction.

The light emitting device 100 includes four corners 191 to 197, and a direction from the first corner 191 to the fourth corner 197 is called a first direction, and the fourth corner 197 is formed from the fourth corner 197. The direction toward the three corners 195 may be referred to as a second direction.

1, three of the six first contact electrodes 142-1 to 142-6 may be arranged in a line in a first direction, and the remaining three may be arranged in a line in a second direction. have. The last first contact electrodes 142-3 disposed to be spaced apart from one side of the first pad part P1 in the first direction and the first contact electrodes 142-4 to 142- disposed in the second direction. 6) may be aligned with each other. The two second contact electrodes 142-7 and 142-8 may be arranged in a line in a second direction from the other side of the first pad part P1.

Intervals between the adjacent first contact electrodes 142-1 to 142-6 may be equally spaced from each other, but are not limited thereto, and may be provided between the adjacent first contact electrodes 142-1 to 142-6. The spacing can be different. The distance between the adjacent first contact electrodes 142-1 to 142-6 may increase as the distance from the first pad part P1 increases.

In an area of the light emitting device 100 which is adjacent to the first pad part P1, an adjacent first first part disposed closer to the first pad part P1 in order to alleviate current crowding in which current is concentrated and supplied. The distance between the contact electrodes is increased, and the distance between adjacent first contact electrodes disposed to be spaced apart from the first pad part P1 is narrowed so that the current is far from the first pad part P1. By diffusing, a uniform light emission distribution can be obtained. The light emission efficiency can be improved by such a uniform light emission distribution.

For example, the separation distance between adjacent first contact electrodes 142-1 and 142-2 may be greater than the separation distance between other adjacent first contact electrodes 142-2 to 142-3.

The second contact electrodes 142-7 and 142-8 may also be spaced apart from each other at equal intervals, but as described above, adjacent second contacts may be adjacent to each other according to a distance from the first pad part P1 in order to alleviate current concentration. The separation distance between the electrodes can be varied. For example, the distance between adjacent second contact electrodes 142-1 to 142-6 may increase as the distance from the first pad part P1 increases.

The contact electrodes 142-1 to 142-8 may be shaped like a plug filled with a conductive material in a through hole, and the cross-sectional shape of the contact electrodes 142-1 to 142-8 may vary from circular, elliptical, triangular, square, pentagonal, and the like. Can be. For example, when the cross-section of the contact electrodes is a square, the ratio of the width and length may be 1 to 10, but is not limited thereto.

The first electrode 150 is disposed on one region of the contact electrodes 142-1 to 142-8 and the second conductive semiconductor layer 126 to contact the contact electrodes 142-1 to 142-8. do. In this case, the passivation layer 130 is disposed to prevent electrical contact between the first electrode 150 and the second conductive semiconductor layer 126.

The first electrode 150 includes a first pad part P1 and at least one extension part D1 and D2. The first pad part P1 is a part of the first electrode 150 in the first pad area C in which the first pad 155 is disposed. In this case, the at least one expansion unit D1 and D2 may include a first expansion unit D1 and a second expansion unit D2. The first and second extensions D1 and D2 are branched from the first pad part P1 to make electrical contact with the first and second contact electrodes 142-1 to 142-8. Say a part of).

The first extension part D1 branches in one direction from the first pad part P1 to contact the first contact electrodes 142-1 to 142-6, and the second extension part D2 contacts the second contact part. Branching from the first pad part P1 toward the other side is in contact with the electrodes 142-7 and 142-8. In this case, the first pad part P1, the first extension part D1, and the second extension part D2 may be integrated. The first pad 155 may be disposed on the first pad part P. FIG.

The first pad 155 may be a part of the first pad region C in which a wire is bonded to receive the first power from the outside. The first power may be supplied to the first pad part P1 from the outside through a wire.

For example, a portion of the first extension part D1 extends in the first direction to contact some of the first contact electrodes 142-1 to 142-3 from one side of the first pad part P1, and the first extension. The remaining portion of the portion D1 may be extended in the second direction to contact the remaining first contact electrodes 142-4 to 142-6.

In addition, the second extension part D2 may be extended in the second direction to contact the second contact electrodes 142-7. 142-8 from the other side of the first pad part P1.

The first extension part D1 and the second extension part D2 may have a width of 5.0 μm to 20 μm. The widths of the contact electrodes 142-1 to 142-8 may be equal to or larger than the widths of the first extension part D1 and the second extension part D2. For example, the ratio W2 / W1 of the widths of the first and second extensions D1 and D2 to the width of the contact electrode may be 1 to 1.5. Here, W1 is the width of the first expansion part D1 and the second expansion part D2, and W2 is the width of the contact electrode.

 When the widths of the contact electrodes 142-1 to 142-8 are smaller than the widths of the first extension part D1 and the second extension part D2, the contact electrodes 142-1 to 142-8 and the first electrode are defined. Damage due to overcurrent may occur in the contact portion between the first and second extensions D1 and D2. In addition, when the widths of the contact electrodes 142-1 to 142-8 are made too large, a loss of light output may occur due to a decrease in emission area. Therefore, when the ratio W2 / W1 of the width W1 of the first extension part D1 and the second extension part D2 and the width W2 of the contact electrode is 1 to 1.5, while preventing damage due to overcurrent, The light output loss can be prevented.

In addition, the contact electrodes 142-1 to 142-8 and the first electrode 150 may be integrated. In this case, the first electrode 150 penetrates through the second conductive semiconductor layer 126 and the active layer 124. To contact the first conductivity-type semiconductor layer 122.

The passivation layer 130 may include the light emitting structure 120 and the contact electrodes to electrically insulate the contact electrodes 142-1 to 142-8 from the second conductive semiconductor layer 126 and the active layer 124. 142-1 to 142-8). For example, the passivation layer 130 may be interposed between the side surfaces of the contact electrodes 142-1 to 142-8 and the penetrated portion of the light emitting structure 120, and include SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , to be formed of Al ₂ O ₃ But it is not limited thereto.

In addition, the passivation layer 130 is disposed on one region of the second conductivity-type semiconductor layer 126 adjacent to the contact electrodes 142-1 to 142-8, and the first electrode 150 and the contact electrodes ( The second conductive semiconductor layers 126 adjacent to 142-1 to 142-8 are electrically insulated from each other. For example, the passivation layer 130 is different from the second conductivity type semiconductor layer 126 adjacent to each of the six contact electrodes shown in FIG. 1 and the second conductivity type semiconductor layer 126 between the adjacent contact electrodes. It may be formed on some areas.

In addition, at least one passivation layer 130 is formed between the first pad part P1 and the second conductivity-type semiconductor layer 126 for electrical insulation between the first electrode 150 and the second conductivity-type semiconductor layer 126. Is disposed between the second conductive semiconductor layer 126 and the remaining portion of the expansion portions D1 and D2 except for the portion in contact with the contact electrodes. At this time, the thickness of the passivation layer 130 may be 10nm ~ 1000nm.

The conductive layer 160 is disposed on another region of the second conductive semiconductor layer 126 in order to increase the light extraction efficiency of the light emitting device 100. For example, the conductive layer 160 may be disposed on another region of the second conductivity type semiconductor layer 126 in which the passivation layer 130 is not disposed.

The conductive layer 160 may be spaced apart from the passivation layer 130, and the conductive layer 160 and the passivation layer 130 may be disposed on the second conductive semiconductor layer 126 on the same plane. The conductive layer 160 is an indium tin oxide (ITO), tin oxide (TO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), and zinc oxide (ZnO), which are transparent oxide materials having high transmittance with respect to the emission wavelength. ) And the like.

In FIG. 1, the first electrode 150 is illustrated by a dotted line to show the contact electrodes 142-1 to 142-8 and the passivation layer 130.

The second electrode 165 is disposed on one region of the conductive layer 160. The second electrode 165 includes a second pad part P2, a third extension part F1, and a fourth extension part F2.

The second pad part P2 is a portion of the second electrode 165 in the second pad area E in which the second pad 170 is disposed. The third extension part F1 is another part of the second electrode 165 branching from one side of the second pad part P2, and the fourth extension part F2 is from the other side of the second pad part P2. Another part of the second electrode 165 is branched. The second pad 170 may be disposed on one area of the second pad part P2.

The third extension part F1 is branched from one side of the second pad part P2 in the third direction, and the fourth extension part F2 is branched from the other side of the second pad part P2 in the fourth direction. Can be. The third direction is a direction from the third edge 195 to the fourth edge 197 of the light emitting device 100, and the fourth direction is a direction from the third edge 195 to the second edge 193. Can be. In this case, the fourth extension part F2 may branch in the fourth direction from the other side of the second pad part P2 and then branch in the third direction.

For example, the third extension part F1 is branched between the first extension part D1 and the second extension part D2 in a third direction from one side of the second pad part P2, and the second extension part D2. May branch between the third expansion part F1 and the third expansion part F2 in the second direction from the other side of the first pad part P1.

In general, the light emitting device has a mesa-etched structure with respect to a portion of the light emitting structure corresponding to the entire N-type electrode. However, the light emitting device 100 according to the embodiment may include a first conductive semiconductor layer ( The light emitting device 100 may be etched only for the region of the light emitting structure corresponding to the portion of the contact electrodes 142-1 to 142-8 in contact with the first conductive semiconductor layer 122. The effective light emitting area can be increased to improve luminous efficiency and luminous intensity.

In addition, in the embodiment, the contact electrodes 142-1 to 142-8 are spaced apart from the first pad part P1, and the contact electrodes 142-1 to 142-8 are formed by the passivation layer 130. Since electrical insulation is performed between the portion of the light emitting structure 120 penetrated by etching, damage to the light emitting device 100 due to electrostatic discharge (ESD) may be reduced.

4 to 8 show a light emitting device manufacturing method according to the embodiment. 4 to 8 are cross-sectional views taken along the AA ′ direction of FIG. 1. The same parts as in the embodiment disclosed in FIG. 1 are denoted by the same reference numerals, and description thereof will not be repeated.

As shown in FIG. 4, the light emitting structure 120 is grown on the growth substrate 110. The growth substrate 110 may be formed of at least one of sapphire (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, Ge, but is not limited thereto.

The light emitting structure 120 may be formed by sequentially growing the first conductive semiconductor layer 122, the active layer 124, and the second conductive semiconductor layer 126 on the growth substrate 110.

The light emitting structure 120 may include, for example, Metal Organic Chemical Vapor Deposition (MOCVD), Chemical Vapor Deposition (CVD), Plasma-Enhanced Chemical Vapor Deposition (PECVD), and molecular beam growth. It may be formed using a method such as Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), but is not limited thereto. A buffer layer (not shown) and / or an undoped nitride layer (not shown) may be formed between the light emitting structure 120 and the growth substrate 110 to alleviate the lattice constant difference.

Next, as shown in FIG. 5, the second conductivity-type semiconductor layer 126, the active layer 124, and the first conductivity-type semiconductor layer 122 are etched using a photolithography process and an etching process. Thus, grooves 512 are formed in one region of the light emitting structure 120 to expose the first conductivity-type semiconductor layer 122. For example, grooves 512 may be formed in the light emitting structure 120 to expose the first conductivity-type semiconductor layer 122 to correspond to the contact electrodes 142-1 to 142-8 shown in FIG. 1.

In this case, the shape of the grooves 512 may be varied, such as a hole, a trench, and a line-shaped groove, and the bottom of the grooves 512 is lower than the active layer 124.

Next, as shown in FIG. 6, a passivation layer on the side of the grooves 512 to open the bottom of the grooves 512, and on one region of the second conductivity-type semiconductor layer 216 adjacent to the grooves 512. 130 is formed. In addition, the passivation layer 130 is formed on the second conductivity-type semiconductor layer 126 corresponding to the first pad region P1. An ohmic layer and / or a reflective electrode layer 210 is formed at the bottom of the grooves 512 to be opened.

Next, as shown in FIG. 7, the first electrodes 150 are formed on the passivation layer 130 so as to contact the first conductive semiconductor layer 122 by filling the grooves 512 with a conductive material. In this case, the first electrode 150 is also formed on the passivation layer 130 of the first pad region P1. When a material in ohmic contact with the first conductive semiconductor layer is used as the first electrode forming material, the ohmic layer may not be separately formed in FIG. 6.

The conductive material may be the same as the material of the first electrode 150 described above, and the conductive material filled in the grooves 512 may be the contact electrodes 142-1 to 142-8. Accordingly, the first electrode 150 contacts the first conductive semiconductor layer 122 through the contact electrodes 142-1 to 142-8, and the second conductive semiconductor layer 126 by the passivation layer 130. And electrically insulate from the active layer 124.

Next, as shown in FIG. 8, the conductive layer 160 is formed on another region of the second conductivity-type semiconductor layer 126. In this case, the conductive layer 160 may be formed to be spaced apart or in contact with the passivation layer 130. The second electrode 165 is formed on the conductive layer 160.

Unlike the above description, the first electrode 150 and the second electrode 165 may be simultaneously formed. For example, in FIG. 6, the passivation layer 130 is formed on a side of the grooves 512 and on a region of the second conductivity-type semiconductor layer 216 adjacent to the grooves 512, and the second conductivity-type semiconductor layer ( Conductive layer 160 is formed on another region of 216.

The first electrode 150 is formed on the passivation layer 130 so as to contact the first conductivity-type semiconductor layer 122 by filling the grooves 512 with a conductive material, and at the same time, a second electrode on the conductive layer 160. 165 may be formed. In this case, the shapes of the first electrode 150 and the second electrode 165 may be patterned as described with reference to FIG. 1.

9 illustrates a light emitting device 200 according to another embodiment. 9, the light emitting device 200 includes a substrate 110, a light emitting structure 120, a passivation layer 130, contact electrodes 210, a first electrode 150, and a conductive layer 160. ), And a second electrode 165. The same parts as in the embodiment disclosed in FIG. 1 are denoted by the same reference numerals, and description thereof will not be repeated.

The contact electrodes 910 and 920 illustrated in FIG. 9 contact the first conductive semiconductor layer 122 through the second conductive semiconductor layer 126 and the active layer 124. The contact electrodes 910 and 920 contact the first conductive semiconductor layer 122 through the second conductive semiconductor layer 126 and the active layer 124. One end of each of the contact electrodes 910 and 920 contacts the first conductivity type semiconductor layer 122, and the other end thereof is opened from the second conductivity type semiconductor layer 126.

The contact electrodes 910 and 920 are spaced apart from the first pad part P1 and have a line shape. The contact electrodes 910 and 920 include a first contact electrode 910 and a second contact electrode 920, and at least one of the first contact electrode 910 and the second contact electrode 920 is bent at least once. It may be in the form.

The first contact electrode 910 may be spaced apart from one side of the first pad part P1 and may have a line shape that is bent at least once. For example, the first contact electrode 910 may have a line shape that is directed in a first direction and bent in a second direction. The second contact electrode 920 is spaced apart from the other side of the first pad part P2 and may have a line shape that is bent at least once. For example, the second contact electrode 920 may have a line shape extending in the second direction.

The first electrode 150 is disposed on one region of the contact electrodes 910 and 920 and the second conductivity type semiconductor layer 126 to contact the contact electrodes 910 and 920. The first electrode 150 includes a first pad part P1, a first extension part D1, and a second extension part D2.

The first extension part D1 branches in one direction from the first pad part P1 to contact the first contact electrode 910, and the second extension part D2 contacts the second contact electrode 920. Branching is performed from the first pad portion P1 in the other one direction. In this case, the first pad part P1, the first extension part D1, and the second extension part D2 may be integrated.

3 and 7, in the light emitting device 100 or 200 according to the embodiment, the first electrode 150 may have a first conductivity by the contact electrodes 142-1 to 142-8, 910, and 920. Since the first semiconductor layer 122 is in contact with the type semiconductor layer 122, the first electrode 150 and the second electrode 165 do not have a step due to mesa etching.

10 illustrates a light emitting device package according to an embodiment. Referring to FIG. 10, the light emitting device package may include a package body 710, a first metal layer 712, a second metal layer 714, a light emitting device 720, a first wire 722, a second wire 724, The reflective plate 730 and the encapsulation layer 740 are included.

The package body 710 has a structure in which a cavity is formed in one region. At this time, the side wall of the cavity may be formed to be inclined. The package body 710 may be formed of a substrate having good insulation or thermal conductivity, such as a silicon-based wafer level package, a silicon substrate, silicon carbide (SiC), aluminum nitride (AlN), or the like. It may have a structure in which a plurality of substrates are stacked. Embodiment is not limited to the material, structure, and shape of the body described above.

The first metal layer 712 and the second metal layer 714 are disposed on the surface of the package body 710 to be electrically separated from each other in consideration of heat dissipation or mounting of a light emitting device. The light emitting device 720 is electrically connected to the first metal layer 712 and the second metal layer 714 through the first wire 722 and the second wire 724. In this case, the light emitting device 720 may be the embodiment shown in FIG. 1 or 9.

For example, the first wire 722 electrically connects the second pad 170 and the first metal layer 712 of the light emitting device 100 or 200 shown in FIG. 1 or 9, and the second wire 724 is formed of a first wire 724. The first pad 155 and the second metal layer 714 may be electrically connected to each other.

The reflector 730 is formed on the sidewall of the cavity of the package body 710 to direct light emitted from the light emitting device 720 in a predetermined direction. The reflector plate 730 is made of a light reflective material, and may be, for example, a metal coating or a metal flake.

The encapsulation layer 740 surrounds the light emitting device 720 positioned in the cavity of the package body 710 to protect the light emitting device 720 from the external environment. The encapsulation layer 740 is made of a colorless transparent polymer resin material such as epoxy or silicon. The encapsulation layer 740 may include a phosphor to change the wavelength of light emitted from the light emitting device 720. The light emitting device package may include at least one of the light emitting devices of the embodiments disclosed above, but is not limited thereto.

A plurality of light emitting device packages according to the embodiment may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, or the like, which is an optical member, may be disposed on an optical path of the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a backlight unit.

Another embodiment may be implemented as a display device, an indicator device, or a lighting system including the light emitting device or the light emitting device package described in the above embodiments, and for example, the lighting system may include a lamp or a street lamp.

11 illustrates a lighting device including a light emitting device according to the embodiment. Referring to FIG. 11, the lighting apparatus includes a power coupling unit 810, a heat sink 820, a light emitting module 830, a reflector 840, and a cover cap 850. The lens unit 860 is included.

The power coupling unit 810 has a screw shape in which an upper end is inserted into an external power socket (not shown), and is inserted into an external power socket to supply power to the light emitting module 830. The heat dissipation plate 820 emits heat generated from the light emitting module 830 to the outside through the heat dissipation pins formed at the side surfaces. The upper end of the heat dissipation plate 820 is screwed with the lower end of the power coupling unit 810.

A light emitting module 840 including light emitting device packages mounted on a circuit board is fixed to a bottom surface of the heat dissipation plate 820. In this case, the light emitting device packages may be light emitting device packages according to the exemplary embodiment illustrated in FIG. 10.

The lighting device may further include an insulating sheet 832, a reflective sheet 834, etc. for electrically protecting the light emitting module under the light emitting module 830. In addition, an optical member that performs various optical functions may be disposed on a path of the light radiated by the light emitting module 840.

The reflector 840 is combined with the lower end of the heat dissipation plate 820 in the shape of a truncated cone and reflects light emitted from the light emitting module 830. The cover cap 850 has a circular ring shape and is coupled to the bottom of the reflector 140. The lens unit 860 is fitted to the cover cap 850. The lighting device 800 illustrated in FIG. 11 may be embedded in a ceiling or a wall of a building and used as a downlight.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in each embodiment may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

110 substrate 120 light emitting structure
122: first conductive semiconductor layer 124: active layer
126: second conductive semiconductor layer 130: passivation layer
142-1 to 142-8: contact electrode 150: first electrode
155: first pad 160: conductive layer
165: second electrode 170: second pad
191 to 197: corner 210: contact electrode 710: package body 712, 714: first and second metal layers
720: light emitting element 722, 724: first and second wires
730: reflector 740: encapsulation layer
810: power coupling unit 820: heat dissipation plate
830: light emitting module 840: reflector
850: cover cap 860: lens unit.

Claims (12)

Board:
A light emitting structure in which a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer are stacked on the substrate;
Contact electrodes penetrating the second conductive semiconductor layer and the active layer to be in contact with the first conductive semiconductor layer and spaced apart from each other;
A first electrode on one region of a second conductivity-type semiconductor layer having a first pad portion on which a first pad is to be formed and at least one extension portion branching from the first pad portion to contact the contact electrodes;
And a passivation layer disposed between the second conductive semiconductor layer and the first electrode, between the contact electrodes and the second conductive semiconductor layer, and between the contact electrodes and the active layer. The method of claim 1, wherein the contact electrodes,
First contact electrodes spaced apart from one side of the first pad part in a first direction; And
And second contact electrodes spaced apart from each other at one side of the first pad part in a second direction. The method of claim 1,
The first direction and the second direction is a light emitting device different from each other. The method of claim 1,
The light emitting device of claim 1, wherein the contact electrodes and the first electrode are integrated. The method of claim 1, wherein the light emitting device,
And an ohmic layer disposed between the contact electrodes and the first conductive semiconductor layer. The method of claim 1, wherein the light emitting device,
A conductive layer on another region of the second conductive semiconductor layer; And
The light emitting device further comprises a second electrode on the conductive layer. The method of claim 1,
An interval between adjacent contact electrodes increases as the distance from the first pad portion increases. The method of claim 2, wherein the at least one expansion unit,
A first expansion part branching in one direction from the first pad part to contact the first contact electrodes; And
And a second expansion part branching from the first pad part to the other one direction to contact the second contact electrodes. The method of claim 1,
The light emitting device of claim 1, wherein the width of the first contact electrodes is equal to or greater than the width of the first extension, and the width of the second contact electrodes is equal to or greater than the width of the second extension. The method of claim 1, wherein the contact electrodes,
A first contact electrode having a line shape spaced apart from one side of the first pad part; And
And a second contact electrode in a line form spaced apart from the other side of the first pad part. The method of claim 10,
At least one of the first contact electrode and the second contact electrode,
A light emitting device that is bent at least once. Package body;
A first metal layer and a second metal layer disposed on the package body;
The light emitting device of any one of claims 1 to 10 mounted to the package body to be electrically connected to the first metal layer and the second metal layer; And
Light emitting device package including a sealing layer (sealing layer) surrounding the light emitting device.

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