KR101769046B1 - A light emitting device and a light emitting device package - Google Patents

Abstract

The light emitting device includes a substrate, a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer stacked on the substrate, a light emitting structure penetrating the second conductive semiconductor layer and the active layer, And a first electrode on the contact electrode, a passivation layer between each of the second conductivity type semiconductor layer and the active layer and the contact electrode, and a first electrode on the contact electrode.

Description

[0001] The present invention relates to a light emitting device and a light emitting device package,

The present invention relates to a light emitting device and a light emitting device package.

BACKGROUND ART Light emitting diodes (LEDs) are a kind of semiconductor devices that convert the electric power to infrared rays or light using the characteristics of compound semiconductors, exchange signals, or use as a light source.

III-V nitride semiconductors (group III-V nitride semiconductors) are widely recognized as key materials for light emitting devices such as light emitting diodes (LEDs) and laser diodes (LD) due to their physical and chemical properties.

Since such a light emitting diode does not contain environmentally harmful substances such as mercury (Hg) used in conventional lighting devices such as incandescent lamps and fluorescent lamps, it has excellent environmental friendliness, and has advantages such as long life and low power consumption characteristics. .

Embodiments provide a light emitting device in which luminous efficiency and luminous efficiency can be improved.

According to the embodiment

The luminous efficiency and luminous efficiency of the luminous means according to the embodiment can be improved.

1 is a plan view of a light emitting device according to an embodiment.
FIG. 2 is a cross-sectional view of the light emitting device shown in FIG. 1 in the AA 'direction.
3 is a cross-sectional view of the light emitting device shown in FIG. 1 in the BB 'direction.
4 to 8 show a method of manufacturing a light emitting device according to an embodiment.
9 shows a light emitting device according to another embodiment.
10 shows a light emitting device package according to an embodiment.
11 shows a lighting device including a light emitting element according to an embodiment.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be referred to as being "on" or "under" a substrate, each layer It is to be understood that the terms " on "and " under" include both " directly "or" indirectly " do. In addition, the criteria for the top / bottom or bottom / bottom of each layer are described with reference to the drawings.

In the drawings, dimensions are exaggerated, omitted, or schematically illustrated for convenience and clarity of illustration. Also, the size of each component does not entirely reflect the actual size. The same reference numerals denote the same elements throughout the description of the drawings. Hereinafter, a light emitting device, a manufacturing method thereof, and a light emitting device package according to embodiments will be described with reference to the accompanying drawings.

1 is a plan view of a light emitting device 100 according to an embodiment of the present invention. FIG. 2 is a sectional view taken along the line AA 'of the light emitting device 100 shown in FIG. 1. FIG. ) In the BB 'direction.

1 to 3, the light emitting device 100 includes a substrate 110, a light emitting structure 120, a passivation layer 130, contact electrodes 142-1 to 142-8, An electrode 150, a conductive layer 160, and a second electrode 165.

The substrate 110 may be selected from the group consisting of a sapphire substrate (Al ₂ O ₃ ), GaN, SiC, ZnO, Si, GaP, InP, Ga ₂ O ₃ , a conductive substrate, and GaAs. An irregular pattern may be formed on the upper surface of the substrate 110.

The light emitting structure 120 has a structure in which the first conductive semiconductor layer 122, the active layer 124, and the second conductive semiconductor layer 126 are sequentially stacked on the substrate 110. In this case, the first conductivity type may be n-type and the second conductivity type may be p-type, but the present invention is not limited thereto.

A layer or a pattern using a compound semiconductor of Group 2 to Group 6 elements is formed between the substrate 110 and the light emitting structure 120 such as a ZnO layer (not shown), a buffer layer (not shown), an undoped semiconductor layer (not shown) At least one layer may be formed. The buffer layer or the undoped semiconductor layer may be formed using a compound semiconductor of a group III-V element, and the buffer layer may reduce a difference in lattice constant with respect to the substrate 110. The undoped semiconductor layer may include a GaN Based semiconductor.

The first conductive semiconductor layer 122 may be selected from nitride semiconductor layers such as InAlGaN, GaN, AlGaN, InGaN, AlN, InN, and AlInN, and an n-type dopant such as Si, Ge, Lt; / RTI >

The active layer 124 may be formed of a single or multiple quantum well structure, a quantum-wire structure, a quantum dot structure, or the like using a compound semiconductor material of Group 3-V group elements.

When the active layer 124 is formed of a quantum well structure, for example, a well having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + Layer and a barrier layer having a composition formula of In _a Al _b Ga _{1 -a- b} N (0? A? 1, 0? _B ? 1, 0? A + b? 1) have. The well layer may be formed of a material having a band gap lower than the band gap of the barrier layer.

The second conductive semiconductor layer 126 may be a nitride semiconductor layer such as InAlGaN, GaN, AlGaN, InGaN, AlN, InN, AlInN, Ba) may be doped.

The contact electrodes 142-1 to 142-8 are in contact with the first conductivity type semiconductor layer 122 through the second conductivity type semiconductor layer 126 and the active layer 124. [ One end of each of the contact electrodes 142-1 to 142-8 is in contact with the first conductivity type semiconductor layer 122 and the other end is opened from the second conductivity type semiconductor layer 126. [

The contact electrodes 142-1 to 142-8 may be formed of a conductive material such as Ti, Al, Al alloy, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Ag alloy, Au, Ru, Au, and the like, and may be a single layer or a multilayer.

At this time, an ohmic layer and / or a reflective electrode layer 210 may be interposed between each of the contact electrodes 142-1 to 142-8 and the first conductive type semiconductor layer 122. [ For example, the ohmic layer may be made of a material such as a conductive oxide film containing ITO, Ni, Cr, Ti, Al, Pt, Pd and the like, and the reflective electrode layer may be made of Ag, Al , Rh, Ag-alloy, Al-alloy, Rh-alloy and the like.

The contact electrodes 142-1 to 142-8 are formed of first contact electrodes 142-1 to 142-6 spaced from one side of the first pad part P1 and first contact electrodes 142-1 to 142-6 on the other side of the first pad part P1 And second contact electrodes 142-7 and 142-8 that are spaced apart from each other. The first pad portion P1 refers to a portion of the first electrode 150 disposed in the first pad region C where the first pad 155 is formed.

Although the embodiment of FIG. 1 includes six first contact electrodes 142-1 through 142-6 and two second contact electrodes 142-7 and 142-8, the first contact electrodes 142-1 And 142-6 and the number of the second contact electrodes 142-7 and 142-8 are not limited thereto.

The number and area of the contact electrodes can be determined so that the area of the first conductive type semiconductor layer in ohmic contact with the contact electrodes corresponds to 10% of the total area of the first electrode 150. [

The first contact electrodes 142-1 to 142-6 are arranged in a line in a first direction from one side of the first pad portion P1 and the second contact electrodes 142-7, May be arranged in a line in the second direction away from the other side of the first pad portion P1. The first direction and the second direction may be different directions, for example, the first direction and the second direction may be perpendicular to each other.

Also, the first contact electrodes 142-1 to 142-8 are spaced apart from each other, and a part 142-1 to 142-3 of the first contact electrodes 142-1 to 142-6 are connected to the first pad electrode 142-1, (142-4 to 142-6) of the first contact electrodes 142-1 to 142-6 are arranged in a line in a first direction from one side of the first contact electrode Pl and the last one of the first contact electrodes 142-1 to 142-6 in the first direction (The first contact electrode 142-3) in the second direction.

The light emitting device 100 includes four edges 191 to 197 and a direction from the first edge 191 to the fourth edge 197 is referred to as a first direction and a direction from the fourth edge 197 to the And the direction toward the three corners 195 may be referred to as a second direction.

In the embodiment shown in FIG. 1, three of the six first contact electrodes 142-1 to 142-6 may be arranged in a line in the first direction and the remaining three may be arranged in a line in the second direction have. And a first contact electrode 142-3 disposed in a first direction apart from one side of the first pad unit P1) and first contact electrodes 142-4 through 142- 6 may be aligned in a line with each other. The two second contact electrodes 142-7 and 142-8 may be arranged in a line in the second direction from the other side of the first pad portion P1.

The intervals between the adjacent first contact electrodes 142-1 to 142-6 may be equal to each other, but the present invention is not limited thereto, and the interval between the adjacent first contact electrodes 142-1 to 142-6 The intervals may be different. The distance between the adjacent first contact electrodes 142-1 to 142-6 may increase as the distance from the first pad portion P1 is increased.

In order to alleviate the current crowding which is concentrated due to current concentration in the region of the light emitting device 100 adjacent to the first pad portion P1, The distance between the contact electrodes is made large and the interval between adjacent first contact electrodes spaced apart from the first pad portion P1 is narrowed to reduce the current from the first pad portion P1 And uniform light emission distribution can be obtained. Such a uniform light emission distribution can improve the light emission efficiency.

For example, the separation distance between adjacent first contact electrodes 142-1 and 142-2 may be larger than the separation distance between adjacent first contact electrodes 142-2 to 142-3.

The second contact electrodes 142-7 and 142-8 may be spaced apart from each other at equal intervals. However, as described above, in order to alleviate current concentration, the second contact electrodes 142-7 and 142-8 may be spaced apart from the first pad portion P1, The distance between the electrodes may be different. For example, the distance between adjacent second contact electrodes 142-1 to 142-6 may increase as the distance from the first pad portion P1 is increased.

The contact electrodes 142-1 to 142-8 may be in the form of a plug filled with a conductive material in a hole and may have a circular shape, an oval shape, a triangle shape, a square shape, . For example, when the cross-section of the contact electrodes is rectangular, the aspect ratio may be 1 to 10, but is not limited thereto.

The first electrode 150 is disposed on one area of the contact electrodes 142-1 to 142-8 and the second conductivity type semiconductor layer 126 to be in contact with the contact electrodes 142-1 to 142-8 do. At this time, a passivation layer 130 is disposed to prevent electrical contact between the first electrode 150 and the second conductive type semiconductor layer 126.

The first electrode 150 includes a first pad portion P1 and at least one extension D1 and D2. The first pad portion P1 is a portion of the first electrode 150 in the first pad region C in which the first pad 155 is disposed. At least one of the extensions D1 and D2 may include a first extension D1 and a second extension D2. The first and second extension portions D1 and D2 extend from the first electrode portion 150 branched from the first pad portion P1 to make electrical contact with the first and second contact electrodes 142-1 through 142-8. ).

The first extension D1 diverges from the first pad P1 in one direction so as to contact the first contact electrodes 142-1 through 142-6 and the second extension D2 contacts the second contact And branches from the first pad portion P1 to the other one side so as to be in contact with the electrodes 142-7 and 142-8. At this time, the first pad portion P1, the first extension portion D1, and the second extension portion D2 may be integrated. The first pad 155 may be disposed on the first pad portion P.

The first pad 155 may be a part of the first pad region C where a wire is bonded to receive a first power supply from the outside. The first power source may be supplied from the outside to the first pad portion P1 through the wire.

For example, a portion of the first extension D1 extends in a first direction to contact some of the first contact electrodes 142-1 through 142-3 from one side of the first pad P1, And the remaining portion of the portion D1 may extend in the second direction to contact the remaining first contact electrodes 142-4 to 142-6.

The second extension D2 may extend in the second direction to contact the second contact electrodes 142-7 and 142-8 from the other side of the first pad P1.

The width of the first extension D1 and the second extension D2 may be between 5.0 um and 20 um. The widths of the contact electrodes 142-1 to 142-8 may be equal to or greater than the widths of the first extension D1 and the second extension D2. For example, the ratio W2 / W1 of the widths of the first extension D1 and the second extension D2 to the width of the contact electrode may be 1 to 1.5. Where W1 is the width of the first extension D1 and the second extension D2 and W2 is the width of the contact electrode.

 When the widths of the contact electrodes 142-1 to 142-8 are smaller than the widths of the first and second extension parts D1 and D2, 1 and the second extension portions D1, D2 may be damaged by an overcurrent. Also, when the widths of the contact electrodes 142-1 to 142-8 are made too large, a loss of light output due to a decrease in the light emitting area may occur. Therefore, when the ratio W2 / W1 of the width W1 of the first extension D1 and the width W2 of the second extension D2 is 1 to 1.5, it is possible to prevent damage due to the overcurrent The optical output loss can be prevented.

In this case, the first electrode 150 may pass through the second conductivity type semiconductor layer 126 and the active layer 124, And is in contact with the first conductivity type semiconductor layer 122.

The passivation layer 130 is formed on the light emitting structure 120 and the contact electrodes 142-1 to 142-8 so that the contact electrodes 142-1 to 142-8 are electrically insulated from the second conductivity type semiconductor layer 126 and the active layer 124. [ 142-1 to 142-8. For example, the passivation layer 130 may be interposed between the perforated portion of the side surface and the light emitting structure 120 of the contact electrodes (142-1 to 142-8), SiO _2, SiO _x, SiO _x N _y, Si ₃ N ₄ , Al ₂ O ₃ However, the present invention is not limited thereto.

The passivation layer 130 is disposed on one region of the second conductivity type semiconductor layer 126 adjacent to the contact electrodes 142-1 to 142-8 and the first electrode 150 and the contact electrodes 142-1 to 142-8 of the second conductivity type semiconductor layer 126 are electrically insulated from each other. For example, the passivation layer 130 may include a second conductive semiconductor layer 126 adjacent to each of the six contact electrodes shown in FIG. 1 and a second conductive semiconductor layer 126 between adjacent contact electrodes, And may be formed on some regions.

The passivation layer 130 may also be formed between the first pad portion P1 and the second conductive semiconductor layer 126 and between the first pad portion P1 and the second conductive semiconductor layer 126 for electrical isolation between the first electrode 150 and the second conductive semiconductor layer 126, The second conductivity type semiconductor layer 126, and the second conductivity type semiconductor layer 126. The second conductivity type semiconductor layer 126 is formed of a conductive material. At this time, the thickness of the passivation layer 130 may be 10 nm to 1000 nm.

The conductive layer 160 is disposed on another region of the second conductive semiconductor layer 126 in order to increase the light extraction efficiency of the light emitting device 100. For example, the conductive layer 160 may be disposed on another region of the second conductive semiconductor layer 126 where the passivation layer 130 is not disposed.

The conductive layer 160 may be spaced apart from the passivation layer 130 and the conductive layer 160 and the passivation layer 130 may be disposed on the second conductive semiconductor layer 126 on the same plane. The conductive layer 160 may be formed of ITO (Indium Tin Oxide), TO (Tin Oxide), IZO (Indium Zinc Oxide), ITZO (Indium Tin Zinc Oxide), ZnO ), And the like.

In Figure 1, the first electrode 150 is shown in phantom to illustrate the contact electrodes 142-1 through 142-8 and the passivation layer 130. [

The second electrode 165 is disposed on one region of the conductive layer 160. The second electrode 165 includes a second pad portion P2, a third extending portion F1, and a fourth extending portion F2.

The second pad portion P2 is a portion of the second electrode 165 in the second pad region E where the second pad 170 is disposed. The third extending portion F1 is another portion of the second electrode 165 branched from one side of the second pad portion P2 and the fourth extending portion F2 is a portion extending from the other side of the second pad portion P2 Is another part of the second electrode 165 that is branched. The second pad 170 may be disposed on one region of the second pad portion P2.

The third extending portion F1 is branched in a third direction from one side of the second pad portion P2 and the fourth extending portion F2 is branched in the fourth direction from the other side of the second pad portion P2 . The third direction is the direction from the third corner 195 of the light emitting device 100 to the fourth edge 197 and the fourth direction is the direction from the third edge 195 to the second edge 193 . At this time, the fourth extending portion F2 can branch in the fourth direction from the other side of the second pad portion P2, and then branch in the third direction.

For example, the third expanding portion F1 is branched from the first pad portion P2 in the third direction between the first expanding portion D1 and the second expanding portion D2, and the second expanding portion D2, Can be branched from the other side of the first pad portion P1 to the third extending portion F1 and the third extending portion F2 in the second direction.

In general, the light emitting device has a structure in which mesa etching is performed on a part of the light emitting structure corresponding to the entirety of the N-type electrode. However, the light emitting device 100 according to the embodiment is not formed in the first conductive semiconductor layer Since the light emitting device 100 has a structure in which only the light emitting structure regions corresponding to the portions of the contact electrodes 142-1 to 142-8 that are in contact with the first conductivity type semiconductor layer 122 are etched for contact with the first conductivity type semiconductor layer 122, The luminous efficiency and the luminous efficiency can be improved.

In the embodiment, the contact electrodes 142-1 to 142-8 are disposed apart from the first pad portion P1, and the contact electrodes 142-1 to 142-8 and the contact electrodes 142-1 to 142-8 are separated by the passivation layer 130, The electrical insulation between the portion of the light emitting structure 120 and the portion of the light emitting structure 120 penetrating through the etching is performed, so that the damage of the light emitting device 100 due to ESD (Electrostatic Discharge) can be reduced.

4 to 8 show a method of manufacturing a light emitting device according to an embodiment. Figs. 4 to 8 show a cross-sectional view in the AA 'direction shown in Fig. The same components as those in the embodiment shown in Fig. 1 are denoted by the same reference numerals, and redundant description will be omitted.

As shown in FIG. 4, the light emitting structure 120 is grown on the growth substrate 110. The growth substrate 110 may be formed of at least one of sapphire (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP and Ge.

The light emitting structure 120 may be formed by successively growing a first conductive semiconductor layer 122, an active layer 124, and a second conductive semiconductor layer 126 on a growth substrate 110.

The light emitting structure 120 may be formed using a metal organic chemical vapor deposition (MOCVD) method, a chemical vapor deposition (CVD) method, a plasma enhanced chemical vapor deposition (PECVD) method, (MBE), hydride vapor phase epitaxy (HVPE), or the like, but the present invention is not limited thereto. A buffer layer (not shown) and / or an undoped nitride layer (not shown) may be formed between the light emitting structure 120 and the growth substrate 110 to mitigate the difference in lattice constant.

5, the second conductive semiconductor layer 126, the active layer 124, and the first conductive semiconductor layer 122 are etched using a photolithography process and an etching process, Grooves 512 for exposing the first conductivity type semiconductor layer 122 are formed in one region of the light emitting structure 120. [ For example, grooves 512 may be formed in the light emitting structure 120 to expose the first conductivity type semiconductor layer 122 to correspond to the contact electrodes 142-1 to 142-8 shown in FIG.

At this time, the shapes of the grooves 512 may vary, such as holes, trenches, and line-shaped grooves, and the bottoms of the grooves 512 are lower than the active layer 124.

6, on the side surface of the grooves 512 to open the bottoms of the grooves 512 and on one side of the second conductivity type semiconductor layer 216 adjacent to the grooves 512, (130). A passivation layer 130 is formed on the second conductive semiconductor layer 126 corresponding to the first pad region P1. Then, the ohmic layer and / or the reflective electrode layer 210 are formed on the bottoms of the open grooves 512.

Next, as shown in FIG. 7, the first electrode 150 is formed on the passivation layer 130 so that the grooves 512 are filled with a conductive material to contact the first conductive semiconductor layer 122. At this time, the first electrode 150 is also formed on the passivation layer 130 of the first pad region P1. When a material that makes an ohmic contact with the first conductivity type semiconductor layer is used as the first electrode forming material, the ohmic layer may not be separately formed in FIG.

The conductive material may be the same as the first electrode 150 material described above, and the conductive material filled in the grooves 512 becomes the contact electrodes 142-1 to 142-8. The first electrode 150 is in contact with the first conductivity type semiconductor layer 122 through the contact electrodes 142-1 to 142-8 and the second conductivity type semiconductor layer 126 is formed by the passivation layer 130, And the active layer (124).

Next, as shown in FIG. 8, a conductive layer 160 is formed on another region of the second conductive semiconductor layer 126. At this time, the conductive layer 160 may be spaced apart from or in contact with the passivation layer 130. A second electrode (165) is formed on the conductive layer (160).

The first electrode 150 and the second electrode 165 may be formed at the same time. For example, the passivation layer 130 may be formed on the side surfaces of the grooves 512 and the second conductive type semiconductor layer 216 adjacent to the grooves 512 in FIG. 6, and the second conductive type semiconductor layer The conductive layer 160 is formed on the other region of the conductive layer 216. [

The first electrode 150 is formed on the passivation layer 130 so as to be in contact with the first conductive semiconductor layer 122 by filling the grooves 512 with a conductive material and the second electrode 150 is formed on the conductive layer 160. (165) can be formed. At this time, the shapes of the first electrode 150 and the second electrode 165 may be patterned as illustrated in FIG. 1

9 shows a light emitting device 200 according to another embodiment. 9, the light emitting device 200 includes a substrate 110, a light emitting structure 120, a passivation layer 130, contact electrodes 210, a first electrode 150, a conductive layer 160 ), And a second electrode (165). The same components as those in the embodiment shown in Fig. 1 are denoted by the same reference numerals, and redundant description will be omitted.

The contact electrodes 910 and 920 shown in FIG. 9 are in contact with the first conductive semiconductor layer 122 through the second conductive semiconductor layer 126 and the active layer 124. The contact electrodes 910 and 920 are in contact with the first conductive semiconductor layer 122 through the second conductive semiconductor layer 126 and the active layer 124. One end of each of the contact electrodes 910 and 920 is in contact with the first conductivity type semiconductor layer 122 and the other end is opened from the second conductivity type semiconductor layer 126.

The contact electrodes 910 and 920 are disposed apart from the first pad portion P1 and are in the form of a line. The contact electrodes 910 and 920 include a first contact electrode 910 and a second contact electrode 920 and at least one of the first contact electrode 910 and the second contact electrode 920 includes a line Lt; / RTI >

The first contact electrode 910 may be in the form of a line spaced from one side of the first pad P1 and bent at least once. For example, the first contact electrode 910 may be in the form of a line that rises in the first direction and turns in the second direction. The second contact electrode 920 may be in the shape of a line spaced apart from the other side of the first pad portion P2 and bent at least once. For example, the second contact electrode 920 may be in the form of a line extending in the second direction.

The first electrode 150 is disposed on one area of the contact electrodes 910 and 920 and the second conductive type semiconductor layer 126 to be in contact with the contact electrodes 910 and 920. The first electrode 150 includes a first pad P1 and a first extension D1 and a second extension D2.

The first extension D1 branches from the first pad P1 in one direction to contact the first contact electrode 910 and the second extension D2 contacts the second contact electrode 920 And branches from the first pad portion P1 toward the other side. At this time, the first pad portion P1, the first extension portion D1, and the second extension portion D2 may be integrated.

Referring to FIGS. 3 and 7, the light emitting device 100 or 200 according to the embodiment includes a first electrode 150 and a second electrode 160. The first electrode 150 is electrically connected to the first electrode 150 through the contact electrodes 142-1 through 142-8, 910, Type semiconductor layer 122, the first electrode 150 and the second electrode 165 do not have steps due to mesa etching.

10 shows a light emitting device package according to an embodiment. 10, the light emitting device package includes a package body 710, a first metal layer 712, a second metal layer 714, a light emitting device 720, a first wire 722, a second wire 724, Reflective plate 730 and encapsulant layer 740. [

The package body 710 has a cavity in which a cavity is formed. At this time, the side wall of the cavity may be formed to be inclined. The package body 710 may be formed of a substrate having good insulating or thermal conductivity such as a silicon based wafer level package, a silicon substrate, silicon carbide (SiC), aluminum nitride (AlN) Or may be a structure in which a plurality of substrates are stacked. The embodiments are not limited to the material, structure, and shape of the body described above.

The first metal layer 712 and the second metal layer 714 are disposed on the surface of the package body 710 such that the first metal layer 712 and the second metal layer 714 are electrically separated from each other in consideration of heat discharge or mounting of the light emitting device. The light emitting device 720 is electrically connected to the first metal layer 712 and the second metal layer 714 through the first wire 722 and the second wire 724. [ Here, the light emitting device 720 may be the one shown in FIG. 1 or FIG.

For example, the first wire 722 electrically connects the second pad 170 of the light emitting devices 100 and 200 shown in FIG. 1 or 9 to the first metal layer 712, 1 pad 155 and the second metal layer 714 can be electrically connected to each other.

The reflection plate 730 is formed on the cavity side wall of the package body 710 so as to direct the light emitted from the light emitting element 720 in a predetermined direction. The reflection plate 730 is made of a light reflection material, and may be, for example, a metal coating or a metal flake.

The encapsulation layer 740 surrounds the light emitting element 720 located in the cavity of the package body 710 to protect the light emitting element 720 from the external environment. The sealing layer 740 is made of a colorless transparent polymer resin material such as epoxy or silicone. The sealing layer 740 may include a phosphor to change the wavelength of light emitted from the light emitting device 720. The light emitting device package can mount at least one of the light emitting elements of the above-described embodiments, but is not limited thereto.

A plurality of light emitting device packages according to embodiments may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, and the like may be disposed on the light path of the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a backlight unit.

Still another embodiment may be implemented as a display device, an indicating device, and a lighting system including the light emitting device or the light emitting device package described in the above embodiments. For example, the lighting system may include a lamp and a streetlight.

11 shows a lighting device including a light emitting element according to an embodiment. 11, the illumination device includes a power coupling 810, a heat sink 820, a light emitting module 830, a reflector 840, and a cover cap 850, And a lens portion 860.

The power coupling unit 810 has a screw shape whose upper end is inserted into an external power socket (not shown) and inserted into an external power socket to supply power to the light emitting module 830. The heat dissipating plate 820 discharges heat generated from the light emitting module 830 through the heat dissipating fin formed on the side surface. The upper end of the heat dissipating plate 820 is screwed to the lower end of the power coupling portion 810.

A light emitting module 840 including light emitting device packages mounted on a circuit board is fixed to a bottom surface of the heat dissipating plate 820. Here, the light emitting device packages may be the light emitting device package according to the embodiment shown in FIG.

The illumination device may further include an insulation sheet 832 and a reflection sheet 834 for electrically protecting the light emitting module under the light emitting module 830. Also, an optical member that performs various optical functions may be disposed on the path of the light irradiated by the light emitting module 840.

The reflecting mirror 840 is coupled to the lower end of the heat dissipating plate 820 in a frustum shape and reflects light emitted from the light emitting module 830. The cover cap 850 has a circular ring shape and is coupled to the lower end of the reflector 140. The lens portion 860 is fitted to the cover cap 850. The lighting device 800 shown in FIG. 11 may be embedded in a ceiling or a wall of a building and used as a downlight.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

110: substrate 120: light emitting structure
122: first conductivity type semiconductor layer 124: active layer
126: second conductivity type semiconductor layer 130: passivation layer
142-1 to 142-8: Contact electrode 150: First electrode
155: first pad 160: conductive layer
165: second electrode 170: second pad
191 to 197: corner 210: contact electrode 710: package body 712, 714: first and second metal layers
720: light emitting element 722, 724: first and second wires
730: reflector 740: sealing layer
810: power coupling part 820: heat dissipating plate
830: Light emitting module 840: Reflector
850: cover cap 860: lens part.

Claims (12)

Board:
And an active layer disposed on the substrate and disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, wherein the first conductivity type semiconductor layer, the second conductivity type semiconductor layer, Type semiconductor layer and grooves that penetrate the active layer and expose a portion of the first conductivity type semiconductor layer;
Contact electrodes disposed in the grooves and electrically connected to the first conductive type semiconductor layer at a bottom surface of the grooves;
A first electrode including a first pad portion and at least one extension portion branched from the first pad portion, the first electrode being disposed on one region of the second conductivity type semiconductor layer; And
And a passivation layer disposed between the upper surface of the second conductive type semiconductor layer and the first electrode,
The contact electrodes being electrically connected to at least one extension of the first electrode,
The width of each of the contact electrodes being greater than the width of the at least one extension,
Wherein the passivation layer includes first portions adjacent to the grooves and a second portion disposed between the first portions, the width of each of the first portions being greater than the width of the second portion. 2. The plasma display panel of claim 1,
First contact electrodes spaced apart from the one side region of the first pad portion in the first direction; And
And second contact electrodes spaced apart from each other in the second direction from the other one side region of the first pad portion,
Wherein the light emitting element includes a first edge, a second edge, a third edge, and a fourth edge, the first direction being a direction from the first edge to the fourth edge, 4 direction from the edge to the third edge. The method according to claim 1,
Wherein the passivation layer further comprises a portion disposed between the first pad portion and the second conductive type semiconductor layer. The method of claim 1, wherein the passivation layer
And a third portion disposed between the contact electrodes and the second conductive type semiconductor layer, and between the contact electrodes and the active layer. The light emitting device according to claim 1,
And an ohmic layer disposed between the contact electrodes and the first conductive type semiconductor layer. The light emitting device according to claim 1,
A conductive layer on another region of the second conductive type semiconductor layer; And
And a second electrode on the conductive layer. The method according to claim 1,
And the distance between adjacent contact electrodes decreases as the distance from the first pad portion increases. 3. The apparatus of claim 2, wherein the at least one extension comprises:
A first extension extending in one direction from the first pad so as to be in contact with the first contact electrodes; And
And a second extending portion that branches from the first pad portion to another direction so as to be in contact with the second contact electrodes. The method according to claim 1,
Wherein the width of the at least one extension is 5.0 占 퐉 to 20 占 퐉. 2. The plasma display panel of claim 1,
A first contact electrode in the form of a line disposed apart from one side of the first pad portion; And
And a second contact electrode in the form of a line disposed apart from the other side of the first pad portion. 3. The method of claim 2,
Wherein the at least one contact electrode comprises:
The light emitting element being spaced apart from one side of the pad portion and being bent in the second direction while advancing in the first direction. A package body;
A first metal layer and a second metal layer disposed in the package body;
The light emitting device according to any one of claims 1 to 11, which is mounted on the package body so as to be electrically connected to the first metal layer and the second metal layer. And
And a sealing layer surrounding the light emitting device.

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