KR20120036572A - Semiconductor light emitting device and method for manufacturing the same - Google Patents

Semiconductor light emitting device and method for manufacturing the same Download PDF

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Publication number
KR20120036572A
KR20120036572A KR1020100098322A KR20100098322A KR20120036572A KR 20120036572 A KR20120036572 A KR 20120036572A KR 1020100098322 A KR1020100098322 A KR 1020100098322A KR 20100098322 A KR20100098322 A KR 20100098322A KR 20120036572 A KR20120036572 A KR 20120036572A
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KR
South Korea
Prior art keywords
transparent electrode
light emitting
semiconductor layer
layer
emitting device
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KR1020100098322A
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Korean (ko)
Inventor
류영호
신영철
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삼성엘이디 주식회사
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Priority to KR1020100098322A priority Critical patent/KR20120036572A/en
Publication of KR20120036572A publication Critical patent/KR20120036572A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes

Abstract

PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to improve optical extraction efficiency by having a structure which includes a reflective part formed in the lower side of a metallic electrode. CONSTITUTION: A light emitting structure is formed on a substrate(10). The light emitting structure comprises a first electrical conductive type semiconductor layer(11), an active layer(12), and a second electrical conductive type semiconductor layer(13). A transparent electrode(14) is formed on the light emitting structure. A reflective part which reflects light created in the active layer is formed in a region in which the transparent electrode is partially eliminated. A first electrode(15) and a second electrode(16) are formed on the light emitting structure and the transparent electrode.

Description

Semiconductor Light Emitting Device and Method for Manufacturing the Same

The present invention relates to a semiconductor light emitting device and a method of manufacturing the same.

A light emitting diode (LED), which is a kind of semiconductor light source, is a semiconductor device capable of generating light of various colors based on recombination of electrons and holes in a junction portion of a p- and n-type semiconductor when current is applied thereto. Such light emitting diodes have a number of advantages, such as long life, low power, excellent initial driving characteristics, and high vibration resistance, compared to filament-based light sources. In particular, group III nitride semiconductors capable of emitting light in a blue short wavelength region have been in the spotlight.

In the case of such a semiconductor light emitting device, a power is applied to the bonded n-type semiconductor layer and the p-type semiconductor layer to generate electrons and holes in the junction region to emit light. Accordingly, metallic n-type and p-type electrodes are formed on the n-type and p-type semiconductor layers to apply power to the n-type and p-type semiconductor layers. However, since the metallic n-type and p-type electrodes do not emit light to the outside and absorb the light, a problem arises in that light extraction efficiency of the semiconductor light emitting device is deteriorated. In particular, in order to improve current spreading characteristics, It becomes a bigger problem when forming the contact surface of a semiconductor layer wide. Therefore, a method for designing a semiconductor light emitting device excellent in both current spreading characteristics and light extraction efficiency is required.

One object of the present invention is to provide a semiconductor light emitting device having a structure including a reflector formed under the metallic electrode and having improved current spreading characteristics and light extraction efficiency, and a method of manufacturing the same.

In order to realize the above technical problem, an aspect of the present invention,

A first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer sequentially stacked on a substrate, and a portion of the second conductive semiconductor layer and the active layer is removed to expose the first conductive semiconductor layer. A light emitting structure, a transparent electrode disposed on the light emitting structure, a reflecting portion disposed in a region where the transparent electrode is partially removed and reflecting light generated from the active layer, and covering at least a portion of the reflecting portion; Provided is a semiconductor light emitting device including first and second electrodes disposed on the transparent electrode.

In one embodiment of the present invention, the transparent electrode and the reflector may be formed on the second conductive semiconductor layer.

In some embodiments, at least some of the first and second electrodes may include the reflector to cover the transparent electrode around the reflector.

In one embodiment of the present invention, the first and second electrodes may include at least one of Cr or Au.

In an embodiment of the present disclosure, the first and second electrodes may include first and second pads, respectively, and first and second fingers extending in a longitudinal direction from the first and second pads. Can be.

In one embodiment of the present invention, the reflector may include at least one of Al and Ag.

In an embodiment of the present disclosure, the transparent electrode may penetrate a region where the transparent electrode is partially removed to expose a part of the surface of the light emitting structure.

In one embodiment of the present invention, the transparent electrode layer, indium tin oxide (ITO), indium oxide (IO), tin oxide (SnO2), zinc oxide (ZnO) and indium zinc oxide (IZO) It may comprise at least one layer consisting of an oxide selected from the group consisting of

Another aspect of the invention,

A first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer sequentially stacked on a substrate, and a portion of the second conductive semiconductor layer and the active layer is removed to expose the first conductive semiconductor layer. Forming a light emitting structure, disposing a transparent electrode on a surface of the light emitting structure, removing a portion of the transparent electrode, and reflecting light emitted from the active layer to a region where the transparent electrode is removed; Disposing a reflector and disposing first and second electrodes on the light emitting structure and the transparent electrode to cover at least a portion of the reflector.

In some embodiments, removing a portion of the transparent electrode may include forming a mask layer on at least a portion of the transparent electrode and removing the transparent electrode exposed to an area where the mask layer is not formed. It may be characterized in that it comprises a step of etching.

In an embodiment of the present disclosure, the disposing unit may be disposed in an area where the transparent electrode is etched and removed.

In this case, removing a part of the transparent electrode,

The transparent electrode may be removed to expose a portion of the surface of the light emitting structure.

In an embodiment of the present disclosure, in the disposing of the first and second electrodes, at least one of the first and second electrodes may be disposed on at least a portion of the reflector.

In one embodiment of the present invention, the transparent electrode and the reflector may be formed on the second conductive semiconductor layer.

In some embodiments, at least some of the first and second electrodes may include the reflector to cover the transparent electrode around the reflector.

In the case of using the semiconductor light emitting device proposed in the present invention and a method of manufacturing the same, the electrode has a pad and a finger to improve current dispersing characteristics, and at the same time, the reflector is disposed in an area where a part of the transparent electrode is removed, thereby releasing the active layer. Since light may be reflected and emitted to the outside without being absorbed by the electrode, an effect of improving light extraction efficiency may be obtained.

1 and 2 schematically show the structure of a semiconductor light emitting device according to an embodiment of the present invention, and correspond to a plan view and a cross-sectional view, respectively.
3 and 4 are cross-sectional views showing paths of light generated in the active layer, respectively, when and when the reflecting portions according to one embodiment of the present invention are not formed.
5 to 9 are cross-sectional views illustrating a method of forming a reflector and an electrode during a manufacturing process of a semiconductor light emitting device according to an exemplary embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

However, embodiments of the present invention may be modified in various other forms, and the scope of the present invention is not limited to the embodiments described below. Further, the embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art. Accordingly, the shape and size of elements in the drawings may be exaggerated for clarity, and the elements denoted by the same reference numerals in the drawings are the same elements.

1 and 2 schematically show a semiconductor light emitting device according to an embodiment of the present invention, and correspond to a plan view and a cross-sectional view, respectively. In this case, FIG. 2 is a cross-sectional view of the AB plane of FIG. 1.

First, referring to FIG. 1 and FIG. 2 together, the semiconductor light emitting device provided in the present embodiment includes the first and second conductive semiconductor layers 11 and 13 formed on the substrate 10 and the active layer disposed therebetween. And a portion of the first conductive semiconductor layer 11 and the active layer 12 may be removed to expose the top surface of the first conductive semiconductor layer 11. Transparent electrodes 14 formed in at least a partial region on the first conductive semiconductor layer 11 and the second conductive semiconductor layer 13 and reflections disposed in regions where a portion of the transparent electrode 14 is removed. The unit 17 and the first and second conductive semiconductor layers 11 and 13 are electrically connected to the first and second pads 15A and 16A and the first and second fingers 15B and 16B, respectively. It may be provided in the form including the first and second electrodes (15, 16) having a.

First, as the substrate 10 provided in the present embodiment, an insulating substrate such as a sapphire substrate can be used as the growth substrate provided for the growth of the nitride semiconductor layer. And a conductive substrate which is a metal substrate, such as SiC, Si, GaN, AlN, or a plating layer, can also be used.

In addition, the first and second conductivity-type semiconductor layers 11 and 13 and the active layer 12 formed therebetween are provided in a structure provided on the substrate 10. In this case, the first conductivity-type semiconductor layer is provided. 11, in x Al y Ga 1 -x- y N (0≤x, 0≤y, x + y≤1) can be made into a layer, the active layer 12 has a multiple quantum well (multi-quantum well ) may be formed of a group III nitride-based group with a different structure the composition of in x Al y Ga 1 -x- y N (0≤x, 0≤y, x + y≤1) layer. On the other hand, the may be of a second conductivity type semiconductor layer 13 is a p-type In x Al y Ga 1 -x- y N (0≤x, 0≤y, x + y≤1) layer. In general, the first and second conductivity-type semiconductor layers 11 and 13 and the active layer 12 may be grown using a device such as a MOCVD, MBE, HVPE, sputter, or PLD.

In addition, the transparent electrode 14 is provided on the second conductivity type semiconductor layer 13. However, the present invention is not particularly limited thereto, and may be provided on the first conductivity type semiconductor layer 11 or on the first and second conductivity type semiconductor layers 11 and 13. In addition, the transparent electrode 14 is a group consisting of indium tin oxide (ITO), indium oxide (IO), tin oxide (SnO 2), zinc oxide (ZnO), and indium zinc oxide (IZO). It may be formed of an oxide selected from, and can be formed using a method known to those skilled in the art among known deposition methods, and the use of sputter deposition is particularly preferred. In the case of the transparent electrode 14 made of an oxide, it is preferable to form a thickness of 1 nm to 1000 nm.

In addition, some regions of the transparent electrode 14 may be removed. In this case, the present invention is not limited thereto, but it is preferable that the transparent electrode 14 be completely formed so that the upper surfaces of the first or second conductivity-type semiconductor layers 11 and 13 are exposed. In order to remove a portion of the transparent electrode 14, it is preferable to use a mask layer, which will be described later.

In addition, the reflector 17 is provided in a structure in which the transparent electrode 14 is partially removed. In this embodiment, the transparent electrode 14 is provided on the second conductive semiconductor layer 13. Although the reflector 17 is provided in the form of being disposed on the second conductivity-type semiconductor layer 13, the present invention is not limited thereto. For example, the reflective part 17 may be disposed on the first conductivity-type semiconductor layer 11. Or on the first and second conductivity-type semiconductor layers 11 and 13.

In addition, the reflector 17 may include at least one of Al and Ag having high light reflectivity, and the thickness is preferably 8000 to 9000 Å.

In addition, first and second electrodes 15 and 16 are formed on the reflector 17 and the transparent electrode 14 while being electrically connected to the first and second conductive semiconductor layers 11 and 13, respectively. Can be. In this case, the present invention is not limited thereto, but the light emitting structure may include an exposed region in which a part of the light emitting structure is removed and the top surface of the first conductive semiconductor layer 11 is exposed to the outside. The first electrode 15 is disposed on the first conductive semiconductor layer 11 exposed as described above, and the second electrode 16 is disposed on the second conductive semiconductor layer 13 on which the exposed area is not formed. It may be provided in the form.

1 and 2 together, the first and second electrodes 15 and 16 provided in the present embodiment each include a first pad 15A and a second pad 16A, and The first finger 15B is formed to extend in the longitudinal direction from the first pad 15A along the surface of the first conductive semiconductor layer 11 and the second conductive semiconductor layer 13 is formed from the second pad 16A. Each of the second fingers 16B formed extending in the longitudinal direction along the surface, and in the case of the present embodiment, as described above, the reflector 17 is disposed on the second conductive semiconductor layer 13. Since the present invention is not necessarily limited thereto, at least a partial region of the second electrode 16 is provided on the reflector 17.

Specifically, the semiconductor light emitting element provided in this embodiment has a rectangular light emitting surface as viewed from above, and the first and second electrodes 15 and 16 are formed on the light emitting surface. That is, the first pad 15A is formed adjacent to one edge of the top surface of the first conductivity type semiconductor layer 11, and the first finger 15B extends from the first pad 15A to extend the first conductivity type. The semiconductor layer 11 is disposed in a structure facing the other edge along one side of the upper surface. The second pad 16A is formed adjacent to an edge diagonally opposite to one edge of the first conductivity-type semiconductor layer 11 on the top surface of the transparent electrode 14, and the second finger 16B is disposed. Is provided in the form of covering the upper portion of the groove portion and the reflecting portion 17 while facing the other edge along the other side opposite the one side on which the first finger 15B is formed, the first and second electrodes ( 15 and 16 may be provided to form a structure parallel to each other. In this case, the interval between the first finger 15B and the second finger 16B is preferably constant. In this way, it is possible to achieve uniform current spreading and distribution between the electrodes 15 and 16. .

In addition, in this embodiment, although the 1st electrode 15 and the 2nd electrode 16 are provided as a pair, and it demonstrates with the structure arrange | positioned at the same space | interval, they are not limited to this in particular, The said 2nd electrode If the structure (16) is advantageous to the current spreading, such as a structure arranged in a symmetrical structure as a whole around the first electrode 15 can be applied to the practice of the present invention.

Here, with reference to FIG. 2, the arrangement relationship between the reflecting unit 17 and the electrodes 15 and 16 and the effects thereof will be described in detail. In this embodiment, the transparent electrode 14 formed on the second conductivity type semiconductor layer 13 is removed and the reflecting portion 17 is formed in the removed region, and the second electrode 16 is the transparent electrode 14. The upper surface of a portion of the transparent electrode 14 where the reflector 17 is not formed, and the region where the reflector 17 is not formed. It is formed to cover.

As described above, when the second electrode 16 (first and / or second electrode according to the embodiment) is provided to cover the upper surface of the transparent electrode 14 having a larger area than the region where the reflecting portion 17 is formed. The advantages will be described later.

3 to 4 are cross-sectional views showing a state in which a path of light generated in an active layer is changed depending on whether a reflector provided in the present invention is present.

Referring to FIG. 3, in the case of a general semiconductor light emitting device, light L1 generated from the active layer 32 of the semiconductor light emitting device is diffused to the entire surface of the semiconductor light emitting device without constant directivity, and in the case of a general semiconductor light emitting device, the active layer 32. Because it is formed close to the top, a relatively large amount of light is emitted upwards. However, the light emitted to the upper surface of the semiconductor light emitting device is first absorbed by the transparent electrode 34 and partly lost, and the part of the light L2 lost by the part is secondarily absorbed and lost by the second electrode 36. In addition, the light L3 reflected from the second electrode 36 without being absorbed is absorbed in the third order by the transparent electrode 34 again. As a result, since the last remaining light L4 is weaker than the first generated light L1, this loss is a factor that reduces the light extraction efficiency of the semiconductor light emitting device.

On the other hand, referring to FIG. 4, the transparent electrode 44 is removed in a region corresponding to the lower portion of the second electrode 46, and instead, the active layer 42 is provided with a reflector 47 having a low light absorption. Light (L5) generated in the is not absorbed and sent back to the semiconductor layer (L6). In this case, the reflected light is emitted to the outside through the side surface of the semiconductor light emitting device, or is formed through the substrate 40 in the case of forming a transmissive substrate, or is directly extracted to the outside through direct emission or reflection at the interface You will have a chance. At the same time, since the reflector 47 is in direct contact with the transparent electrode 44, the second conductivity-type semiconductor layer 43, and the second electrode 46, the reflector 47 is preferably formed of a material having excellent electrical conductivity. .

5 to 7 are cross-sectional views illustrating a method of forming the reflector 57 and the electrodes 55 and 56 during the manufacturing process of the semiconductor light emitting device according to the embodiment of the present invention.

First, referring to FIG. 5, a light emitting structure is formed on a substrate 50, wherein the light emitting structure is sequentially formed from the first conductive semiconductor layer 51, the active layer 52, and the second conductive semiconductor layer. (53). In addition, a portion of the first and second conductive semiconductor layers 51 and 53 and the active layer 52 may be removed to expose the top surface of the first conductive semiconductor layer 51. The transparent electrode 54 having a uniform thickness is formed in at least a portion of the first conductive semiconductor layer 51 and the second conductive semiconductor layer 53. In this case, the transparent electrode 54 may be appropriately selected from known vapor deposition methods, and the use of sputtering vapor deposition is particularly preferable as described above, and the first and second conductivity-type semiconductors are described above. As described above, the layers 51 and 53 and the active layer 52 can be grown using a device such as MOCVD, MBE, HVPE, sputter, or PLD.

In addition, referring to FIG. 6, a mask layer 58 may be formed in a portion of the transparent electrode. In this case, the mask layer may be formed by a known method.

Next, referring to FIG. 7, a portion of the transparent electrode 54 may be removed by etching using the mask layer 58 to expose the second conductive semiconductor layer 53.

Next, referring to FIG. 8, after the etching process, the reflective part 57 may be formed in a region from which a part of the transparent electrode is removed using the same mask layer 58. In this case, the thickness of the reflector 57 may be adjusted according to the embodiment, and, for example, may be formed thicker than the thickness of the transparent electrode 54 as shown.

Next, referring to FIG. 9, the mask layer 58 is removed and an electrode is formed in a peripheral region including the reflector 57 and the reflector. In this case, according to the embodiment, the finger, the pad or the finger and the pad may be disposed to cover the upper portion of the reflecting portion 57.

In this case, although not shown, when the reflective part 57 is formed in the region where a part of the transparent electrode is removed using the same mask layer 58 after the etching process as described above, the reflective part 57 and the transparent electrode ( An unintended gap is generated between the 54) and the electrical connection may not be made smoothly. In this case, when the second electrode 56 is formed to be smaller than the reflector 57, that is, only on the reflector 57, the second electrode 56 and the transparent electrode 54 may be electrically connected. It becomes impossible. Thus, as shown in FIG. 5, the second electrode 56 is provided so as to cover the upper part of the wider area, including the area where the transparent electrode 54 is formed, so that the reflective part 57 and the transparent electrode 54 are separated. Even if a gap occurs, since the second electrode 56 and the transparent electrode 54 are in direct contact with each other, the electrical connection can be more clearly ensured.

The present invention is not limited by the above-described embodiments and the accompanying drawings, but is defined by the appended claims. Therefore, it will be apparent to those skilled in the art that various forms of substitution, modification, and alteration are possible without departing from the technical spirit of the present invention described in the claims, and the appended claims. Will belong to the technical spirit described in.

10, 30, 40, 50; Substrate 11, 31, 41, 51: first conductive semiconductor layer
12, 32, 42, 52: active layer 13, 33, 43, 53: second conductive semiconductor layer
15, 35, 45, 55: first electrode 15A: first pad
15B: first finger 16, 36, 46, 56: second electrode
16A: second pad 16B: second finger
14, 34, 44, 54: transparent electrode 17, 47, 57: reflecting portion
58: mask layer

Claims (15)

A first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer sequentially stacked on a substrate, and a portion of the second conductive semiconductor layer and the active layer is removed to expose the first conductive semiconductor layer. Light emitting structure;
A transparent electrode disposed on the light emitting structure;
A reflector disposed in a region where the transparent electrode is partially removed to reflect light generated from the active layer; And
First and second electrodes covering at least a portion of the reflective part and disposed on the light emitting structure and the transparent electrode;
Semiconductor light emitting device comprising a. The method of claim 1,
And the transparent electrode and the reflecting portion are formed on the second conductivity type semiconductor layer. The semiconductor light emitting device of claim 1, wherein at least some of the first and second electrodes include the reflecting unit to cover the transparent electrode around the reflecting unit. The method of claim 1,
And the first and second electrodes comprise at least one of Cr and Au. The method of claim 1,
And the first and second electrodes respectively include first and second pads, and first and second fingers extending in a longitudinal direction from the first and second pads, respectively. The method of claim 1,
The reflector comprises at least one of Al and Ag, characterized in that the semiconductor light emitting device. The method of claim 1,
And the transparent electrode penetrates a portion of the surface of the light emitting structure to which the transparent electrode is partially removed. The method of claim 1,
The transparent electrode layer is made of an oxide selected from the group consisting of indium tin oxide (ITO), indium oxide (IO), tin oxide (SnO2), zinc oxide (ZnO), and indium zinc oxide (IZO). A semiconductor light emitting device comprising at least one layer. A light emitting structure in which a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer are sequentially stacked on a substrate, and a portion of the second conductive semiconductor layer and the active layer is removed to expose the first conductive semiconductor layer. Forming a;
Disposing a transparent electrode on a surface of the light emitting structure;
Removing a portion of the transparent electrode;
Disposing a reflector reflecting light emitted from the active layer in a region where the transparent electrode is removed; And
Disposing first and second electrodes on the light emitting structure and the transparent electrode to cover at least a portion of the reflective part;
Semiconductor light emitting device manufacturing method comprising a. 10. The method of claim 9,
Removing a portion of the transparent electrode,
Forming a mask layer on at least a portion of the transparent electrode; And
Etching the transparent electrode exposed to a region where the mask layer is not formed;
Method for manufacturing a semiconductor light emitting device comprising a. The method of claim 10,
The disposing part may include disposing the transparent electrode in an area where the transparent electrode is etched and removed. The method of claim 11,
Removing a portion of the transparent electrode,
And removing the transparent electrode to expose a part of the surface of the light emitting structure. 10. The method of claim 9,
In the disposing of the first and second electrodes, at least one of the first and second electrodes may have at least a portion of the region disposed above the reflector. 10. The method of claim 9,
The transparent electrode and the reflecting portion is a semiconductor light emitting device manufacturing method, characterized in that formed on the second conductive semiconductor layer. 10. The method of claim 9,
At least a portion of the first and second electrodes includes the reflecting portion to cover the transparent electrode around the reflecting portion.
KR1020100098322A 2010-10-08 2010-10-08 Semiconductor light emitting device and method for manufacturing the same KR20120036572A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140032825A (en) * 2012-09-07 2014-03-17 삼성전자주식회사 Manufacturing method of semiconductor light emitting device and semiconductor light emitting device using the same method
US9548422B2 (en) 2013-10-17 2017-01-17 Samsung Electronics Co., Ltd. Semiconductor light emitting device including a pad electrode spaced apart from a transparent electrode
WO2018048154A1 (en) * 2016-09-12 2018-03-15 서울바이오시스 주식회사 Semiconductor light emitting device comprising light emitting structure

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140032825A (en) * 2012-09-07 2014-03-17 삼성전자주식회사 Manufacturing method of semiconductor light emitting device and semiconductor light emitting device using the same method
US9548422B2 (en) 2013-10-17 2017-01-17 Samsung Electronics Co., Ltd. Semiconductor light emitting device including a pad electrode spaced apart from a transparent electrode
WO2018048154A1 (en) * 2016-09-12 2018-03-15 서울바이오시스 주식회사 Semiconductor light emitting device comprising light emitting structure

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