KR20120034718A - 반전 층 시퀀스를 포함하는 광활성 컴포넌트, 및 상기 컴포넌트의 생성 방법 - Google Patents

반전 층 시퀀스를 포함하는 광활성 컴포넌트, 및 상기 컴포넌트의 생성 방법 Download PDF

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Publication number
KR20120034718A
KR20120034718A KR1020127000392A KR20127000392A KR20120034718A KR 20120034718 A KR20120034718 A KR 20120034718A KR 1020127000392 A KR1020127000392 A KR 1020127000392A KR 20127000392 A KR20127000392 A KR 20127000392A KR 20120034718 A KR20120034718 A KR 20120034718A
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South Korea
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layer
component
organic photoactive
organic
doped
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English (en)
Korean (ko)
Inventor
베르트 매니그
크리스티안 우리히
카르스텐 왈처
마르틴 파이퍼
데이비드 와이난즈
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헬리아텍 게엠베하
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Withdrawn legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H10K30/211—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions comprising multiple junctions, e.g. double heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
KR1020127000392A 2009-06-05 2010-06-07 반전 층 시퀀스를 포함하는 광활성 컴포넌트, 및 상기 컴포넌트의 생성 방법 Withdrawn KR20120034718A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102009024294.5 2009-06-05
DE102009024294 2009-06-05
DE102009051142.3 2009-10-29
DE102009051142.3A DE102009051142B4 (de) 2009-06-05 2009-10-29 Photoaktives Bauelement mit invertierter Schichtfolge und Verfahren zu seiner Herstellung

Publications (1)

Publication Number Publication Date
KR20120034718A true KR20120034718A (ko) 2012-04-12

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KR1020127000392A Withdrawn KR20120034718A (ko) 2009-06-05 2010-06-07 반전 층 시퀀스를 포함하는 광활성 컴포넌트, 및 상기 컴포넌트의 생성 방법

Country Status (8)

Country Link
US (1) US20120125419A1 (https=)
EP (1) EP2438633B1 (https=)
JP (1) JP2012529169A (https=)
KR (1) KR20120034718A (https=)
CN (1) CN102460761A (https=)
DE (1) DE102009051142B4 (https=)
ES (1) ES2879526T3 (https=)
WO (1) WO2010139803A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
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KR20150015185A (ko) 2013-07-31 2015-02-10 주식회사 엘지화학 벌크이종접합 표면 물성의 조절 방법 및 이를 이용한 다층 구조 태양전지

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DE102012105812A1 (de) * 2012-07-02 2014-01-02 Heliatek Gmbh Elektrodenanordnung für optoelektronische Bauelemente
DE102012106607B4 (de) 2012-07-20 2024-04-04 Heliatek Gmbh Verfahren zur Versiegelung von Modulen mit optoelektronischen Bauelementen
US9660207B2 (en) 2012-07-25 2017-05-23 Samsung Electronics Co., Ltd. Organic solar cell
DE102012106815A1 (de) 2012-07-26 2014-01-30 Heliatek Gmbh Verfahren zur Kontaktierung optoelektronischer Bauelemente
US9845636B2 (en) 2013-01-07 2017-12-19 WexEnergy LLC Frameless supplemental window for fenestration
US9230339B2 (en) 2013-01-07 2016-01-05 Wexenergy Innovations Llc System and method of measuring distances related to an object
US8923650B2 (en) 2013-01-07 2014-12-30 Wexenergy Innovations Llc System and method of measuring distances related to an object
US9691163B2 (en) 2013-01-07 2017-06-27 Wexenergy Innovations Llc System and method of measuring distances related to an object utilizing ancillary objects
US10883303B2 (en) 2013-01-07 2021-01-05 WexEnergy LLC Frameless supplemental window for fenestration
US10196850B2 (en) 2013-01-07 2019-02-05 WexEnergy LLC Frameless supplemental window for fenestration
DE102013111164B4 (de) 2013-10-09 2024-10-24 Heliatek Gmbh Verfahren zur Herstellung von Kontaktlöchern
DE112015004366A5 (de) 2014-09-26 2017-06-08 Heliatek Gmbh Verfahren zum aufbringen einer schutzschicht, schutzschicht selbst und halbfabrikat mit einer schutzschicht
JP2016106437A (ja) * 2016-03-17 2016-06-16 株式会社半導体エネルギー研究所 光電変換装置
KR20180081646A (ko) * 2017-01-06 2018-07-17 삼성디스플레이 주식회사 유기 발광 소자
AU2018278119B2 (en) 2017-05-30 2023-04-27 WexEnergy LLC Frameless supplemental window for fenestration
CN110854269B (zh) * 2019-10-29 2021-09-28 北京大学 一种小分子有机太阳能电池器件及其制备方法

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CA1085947A (en) 1977-08-02 1980-09-16 Ching W. Tang Multilayer organic photovoltaic elements
US5093698A (en) 1991-02-12 1992-03-03 Kabushiki Kaisha Toshiba Organic electroluminescent device
US5769963A (en) * 1995-08-31 1998-06-23 Canon Kabushiki Kaisha Photovoltaic device
DE19905694A1 (de) 1998-11-27 2000-08-17 Forschungszentrum Juelich Gmbh Bauelement
EP1611484B1 (de) * 2003-03-19 2021-11-10 Heliatek GmbH Photoaktives bauelement mit organischen schichten
DE10338406A1 (de) 2003-08-18 2005-03-24 Novaled Gmbh Dotierte organische Halbleitermaterialien sowie Verfahren zu deren Herstellung
DE10347856B8 (de) 2003-10-10 2006-10-19 Colorado State University Research Foundation, Fort Collins Halbleiterdotierung
US7061011B2 (en) 2003-11-26 2006-06-13 The Trustees Of Princeton University Bipolar organic devices
DE10357044A1 (de) 2003-12-04 2005-07-14 Novaled Gmbh Verfahren zur Dotierung von organischen Halbleitern mit Chinondiiminderivaten
DE102004010954A1 (de) 2004-03-03 2005-10-06 Novaled Gmbh Verwendung eines Metallkomplexes als n-Dotand für ein organisches halbleitendes Matrixmaterial, organisches Halbleitermaterial und elektronisches Bauteil
DE102005010978A1 (de) * 2005-03-04 2006-09-07 Technische Universität Dresden Photoaktives Bauelement mit organischen Schichten
DE102005010979A1 (de) 2005-03-04 2006-09-21 Technische Universität Dresden Photoaktives Bauelement mit organischen Schichten
WO2008077615A1 (de) * 2006-12-22 2008-07-03 Novaled Ag Elektronisches bauelement mit mindestens einer organischen schichtanordnung
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150015185A (ko) 2013-07-31 2015-02-10 주식회사 엘지화학 벌크이종접합 표면 물성의 조절 방법 및 이를 이용한 다층 구조 태양전지

Also Published As

Publication number Publication date
DE102009051142B4 (de) 2019-06-27
EP2438633A1 (de) 2012-04-11
EP2438633B1 (de) 2021-05-26
ES2879526T3 (es) 2021-11-22
JP2012529169A (ja) 2012-11-15
US20120125419A1 (en) 2012-05-24
WO2010139803A1 (de) 2010-12-09
CN102460761A (zh) 2012-05-16
DE102009051142A1 (de) 2010-12-09

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PA0105 International application

Patent event date: 20120105

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid