KR20120003773A - A light emitting device, a method for fabricating the light emitting device, light emitting device package, and lighting system - Google Patents

Abstract

PURPOSE: A light emitting device, a light emitting device manufacturing method, a light emitting device package, and a lighting system are provided to electrically insulate a lateral surface of a light emitting structure layer by arranging a passivation layer, thereby improving electrical characteristics by reducing the generation of an electrical short-circuit. CONSTITUTION: A contact layer(150) is arranged on a conductive supporting member(160). A light emitting structure layer(105) is arranged on the contact layer. The light emitting structure layer comprises a first conductivity type semiconductor layer(110), a second conductivity type semiconductor layer(130), and an active layer(120). An electrode(171) is arranged on the light emitting structure layer. A current blocking layer(143) is arranged in the inside of the light emitting structure layer.

Description

A LIGHT EMITTING DEVICE, A METHOD FOR FABRICATING THE LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM}

Embodiments relate to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and an illumination system.

Group III-V nitride semiconductors are spotlighted as core materials of light emitting devices such as light emitting diodes (LEDs) or laser diodes (LDs) due to their physical and chemical properties. The III-V nitride semiconductor is usually made of a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1).

A light emitting diode (LED) is a kind of semiconductor device that transmits and receives a signal by converting electricity into infrared light or light using characteristics of a compound semiconductor.

 LEDs or LDs using such nitride semiconductor materials are widely used in light emitting devices for obtaining light, and have been applied to light sources of various products such as keypad light emitting units, electronic displays, and lighting devices of mobile phones.

The embodiment provides a light emitting device, a light emitting device manufacturing method, a light emitting device package and a lighting system having excellent current spreading characteristics.

The embodiment provides a light emitting device having excellent electrical characteristics, a light emitting device manufacturing method, a light emitting device package, and an illumination system.

The light emitting device according to the embodiment includes a conductive support member; A light emitting layer comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer on the conductive support member Structural layer; An electrode on the light emitting structure layer; A passivation layer disposed on a side surface of the light emitting structure layer and partially disposed inside the first conductive semiconductor layer; And a current blocking layer disposed between the electrode and the conductive support member.

In one embodiment, a method of manufacturing a light emitting device includes forming a first semiconductor layer that is a part of a first conductive semiconductor layer on a growth substrate; Forming a current blocking layer and a first passivation layer on the first semiconductor layer; Forming a second semiconductor layer that is part of the first conductive semiconductor layer on the first semiconductor layer including the current blocking layer and the first passivation layer; Forming an active layer and a second conductive semiconductor layer on the second semiconductor layer; Selectively removing the second conductive semiconductor layer, the active layer, and the second semiconductor layer to expose the first passivation layer; Forming a second passivation layer on the first passivation layer to be disposed on side surfaces of the second conductive semiconductor layer, the active layer, and the second semiconductor layer; And forming a contact layer and a conductive support substrate on the second conductive semiconductor layer.

The embodiment can provide a light emitting device, a light emitting device manufacturing method, a light emitting device package, and an illumination system having excellent current spreading characteristics.

The embodiment can provide a light emitting device having excellent electrical characteristics, a light emitting device manufacturing method, a light emitting device package, and an illumination system.

1 is a side sectional view showing a light emitting device according to the first embodiment;
2 to 11 illustrate a method of manufacturing the light emitting device according to the first embodiment.
12 is a view for explaining a light emitting element according to the second embodiment.
13 is a cross-sectional view of a light emitting device package including a light emitting device according to the embodiments.
14 illustrates a backlight unit including a light emitting device or a light emitting device package according to an embodiment.
15 is a perspective view of a lighting unit including a light emitting device or a light emitting device package according to an embodiment.

In the description of an embodiment, each layer, region, pattern or structure may be "under" or "under" the substrate, each layer, region, pad or pattern. In the case where it is described as being formed at, "up" and "under" include both "directly" or "indirectly" formed through another layer. do. In addition, the criteria for up / down or down / down each layer will be described with reference to the drawings.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not necessarily reflect the actual size.

Hereinafter, exemplary embodiments will be described with reference to the accompanying drawings.

1 is a side sectional view showing a light emitting device according to the first embodiment.

Referring to FIG. 1, the light emitting device 100 according to the first embodiment includes a conductive support member 160, a contact layer 150 on the conductive support member 160, and a light emitting structure on the contact layer 150. A passivation layer 140 disposed on a layer 105, an electrode 171 on the light emitting structure layer 105, and a side surface of the light emitting structure layer 105, and at least a portion of which is disposed inside the light emitting structure layer 105. ) And a current blocking layer 143 overlapping at least a portion of the electrode 171 in the vertical direction and disposed inside the light emitting structure layer 105.

The conductive support member 160 supports the light emitting structure layer 105 and provides power to the light emitting structure layer 105 together with the electrode 171. For example, the conductive support member 160 includes titanium (Ti), chromium (Cr), nickel (Ni), aluminum (Al), platinum (Pt), gold (Au), tungsten (W), and copper (Cu). ), Molybdenum (Mo), or a carrier wafer (eg, Si, Ge, GaAs, ZnO, SiC, SiGe, GaN, etc.).

The conductive support member 160 may be formed by a plating method or a bonding method, and may have a single layer structure formed of one material or a multilayer structure formed of a plurality of materials.

The contact layer 150 is disposed on the conductive support member 160 and in contact with the light emitting structure layer 105. The contact layer 150 may include a material forming ohmic contact with the light emitting structure layer 105, and may include a high reflective material that effectively emits light generated from the light emitting structure layer 105. . For example, the contact layer 150 may be formed of a material including at least one of Al, Ag, Pd, Rh, ITO, Pt, or Ir, but is not limited thereto.

The light emitting structure layer 105 may include a first conductive semiconductor layer 110, a second conductive semiconductor layer 130, the first conductive semiconductor layer 110, and the second conductive semiconductor layer. The active layer 120 is disposed between the 130.

The first conductive semiconductor layer 110 may include only a semiconductor layer including a first conductive impurity, or further include an undoped semiconductor layer on the semiconductor layer including the first conductive impurity. It may, but is not limited to this.

The first conductivity type semiconductor layer 110 may include, for example, an n-type semiconductor layer, wherein the n-type semiconductor layer is In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ a semiconductor material having a composition formula of y≤1, 0≤x + y≤1), for example, InAlGaN, GaN, AlGaN, AlInN, InGaN, AlN, InN, or the like; Dopants may be doped.

Since the undoped semiconductor layer is not doped with a dopant, the undoped semiconductor layer has a significantly lower electrical conductivity than the semiconductor layer 110 of the first conductivity type, thereby improving crystallinity of the semiconductor layer 110 of the first conductivity type. Is a layer that is grown for.

The active layer 120 may be formed under the first conductive semiconductor layer 110. In the active layer 120, electrons (or holes) injected through the first conductive semiconductor layer 120 and holes (or electrons) injected through the second conductive semiconductor layer 130 meet each other. The layer emits light due to a band gap difference between energy bands of the active layer 120.

The active layer 120 may be formed of any one of a single quantum well structure, a multi quantum well structure (MQW), a quantum dot structure, or a quantum line structure, but is not limited thereto.

The active layer 120 may be formed of a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). When the active layer 120 is formed of the multi quantum well structure, the active layer 120 may be formed by stacking a plurality of well layers and a plurality of barrier layers, for example, an InGaN well layer / GaN barrier layer. It may be formed in a cycle.

A clad layer (not shown) doped with an n-type or p-type dopant may be formed on and / or under the active layer 120, and the clad layer (not shown) may be implemented as an AlGaN layer or an InAlGaN layer. have.

The second conductive semiconductor layer 130 may be formed under the active layer 120. The second conductive semiconductor layer 130 may be implemented as, for example, a p-type semiconductor layer. The p-type semiconductor layer may be formed of In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y≤1, 0≤x + y≤1), for example, InAlGaN, GaN, AlGaN, InGaN, AlInN, AlN, InN and the like, and may be selected from Mg, Zn, Ca, Sr, Ba P-type dopants may be doped.

Unlike the above description, the first conductive semiconductor layer 110 may include a p-type semiconductor layer, and the second conductive semiconductor layer 130 may include an n-type semiconductor layer. In addition, a third conductive semiconductor layer (not shown) including an n-type or p-type semiconductor layer may be formed below the second conductive semiconductor layer 130. Accordingly, the light emitting device 100 may be It may have at least one of np, pn, npn, or pnp junction structure. In addition, the doping concentrations of the conductive dopants in the first conductive semiconductor layer 110 and the second conductive semiconductor layer 130 may be uniformly or non-uniformly formed. That is, the structure of the light emitting structure layer 105 may be variously formed, but is not limited thereto.

The first conductive semiconductor layer 110 may include a first semiconductor layer 112 and a second semiconductor layer 114. The second semiconductor layer 114 may be disposed under the first semiconductor layer 112 and may contact the active layer 120. The electrode 171 is disposed on the first semiconductor layer 112. In addition, roughness may be formed on the whole or part of the upper surface of the first semiconductor layer 112, and the roughness may increase the light efficiency of the light emitting device 100. In addition, the first semiconductor layer 112 and the second semiconductor layer 114 may be formed of the same material or different materials.

A current blocking layer 143 may be formed between the first semiconductor layer 112 and the second semiconductor layer 114 such that at least a portion of the electrode 171 overlaps in a vertical direction. The current blocking layer 143 may be formed of a material having a significantly lower electrical conductivity than the first semiconductor layer 112 or the second semiconductor layer 114. For example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , or may include at least one of TiO ₂ .

The passivation layer 140 is formed on the side of the light emitting structure layer 105. For example, the passivation layer 140 may be disposed on side surfaces of the second semiconductor layer 114, the active layer 120, and the second conductive semiconductor layer 130.

In addition, the passivation layer 140 may be partially disposed between the first semiconductor layer 112 and the second semiconductor layer 114.

In addition, the passivation layer 140 may be partially disposed between the second conductive semiconductor layer 130 and the contact layer 150.

The passivation layer 140 may include a first passivation layer 142 and a second passivation layer 144, and the second passivation layer 144 may be disposed below the first passivation layer 142. have.

The first passivation layer 142 may be disposed between the first semiconductor layer 112 and the second semiconductor layer 114 and on the side surface of the second semiconductor layer 114. 114 may be formed in an area including the upper periphery of the top surface.

The second passivation layer 144 may be formed between the second conductive semiconductor layer 130 and the contact layer 150 and between the second semiconductor layer 114, the active layer 120, and the second conductive type. The semiconductor layer 130 may be disposed on side surfaces of the contact layer 150, and may be formed in an area including a peripheral portion of a lower surface of the second conductive semiconductor layer 130.

The passivation layer 140 may be formed of an insulating material. For example, SiO ₂ , SiO _x , SiO _x N _y , At least one of Si ₃ N ₄ , Al ₂ O ₃ , or TiO ₂ may be included. The first passivation layer 142 may be formed of the same material as or different from the second passivation layer 144. The first passivation layer 142 may be formed of the same material as or different from the current blocking layer 143. It can be formed of a material.

In an embodiment, the first passivation layer 142, the second passivation layer 144, and the current blocking layer 143 are formed of the same material, and in this case, the manufacturing process is easy.

The passivation layer 140 may provide a light emitting device 100 having excellent electrical characteristics by reducing the possibility of occurrence of an electrical short circuit by electrically insulating the side surface of the light emitting structure layer 105. In addition, the passivation layer 140 may protect the light emitting structure layer 105 from external moisture to improve electrical and light emitting characteristics of the light emitting structure layer 105.

The passivation layer 140 is formed on the lower side surface of the light emitting structure layer 105. That is, the passivation layer 140 is disposed on side surfaces of the second conductive semiconductor layer 130 and the active layer 120, and is disposed on the lower side surface of the first conductive semiconductor layer 110.

Since the passivation layer 140 is disposed on the lower side of the first conductive semiconductor layer 110 and not on the upper side of the first conductive semiconductor layer 110, the passivation layer 140 is formed on the active layer 120. The amount of light absorbed by the passivation layer 140 among the emitted light is reduced, so that the light efficiency of the light emitting device 100 may be improved.

2 to 11 illustrate a method of manufacturing the light emitting device according to the first embodiment.

Referring to FIG. 2, a growth substrate 101 is loaded onto growth equipment, and a first semiconductor layer 112 of the first conductive semiconductor layer 110 is formed on the growth substrate 101.

The growth substrate 101 may be formed of, for example, at least one of sapphire (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, or Ge, but is not limited thereto.

The first semiconductor layer 112 may be formed of, for example, metal organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), or plasma chemical vapor deposition (PECVD). , Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), etc. may be formed using, but is not limited thereto.

The first semiconductor layer 112 includes a group III-V compound semiconductor doped with a first conductivity type dopant, and may include, for example, any one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, or AlInN. It may be. When the first semiconductor layer 112 is an n-type semiconductor, n-type dopants (eg, Si, Ge, Sn, Se, Te, etc.) are doped.

Before forming the first semiconductor layer 112, a buffer layer and / or an undoped semiconductor layer may be formed on the growth substrate 101, and between the growth substrate 101 and the first semiconductor layer 112. It can reduce the difference of the lattice constant of. For example, the buffer layer may be formed of a compound semiconductor layer including at least one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, or AlInN, and the undoped semiconductor layer is formed of an undoped GaN-based semiconductor layer. It may be, but is not limited thereto.

3 and 4, the current blocking layer 143 and the first passivation layer 142 are formed on the first semiconductor layer 112. The first passivation layer 142 is formed along the upper periphery of the first semiconductor layer 112, and the current blocking layer 143 is formed at the center of the upper surface of the first semiconductor layer 112.

The current blocking layer 143 is disposed at a position where at least a portion of the current blocking layer 143 overlaps the vertical direction. In the exemplary embodiment, the current blocking layer 143 is formed at the center of the upper surface of the first semiconductor layer 112, but the current blocking layer 143 may be changed in various forms according to the shape of the electrode 171. Can be.

The first passivation layer 142 is disposed at the periphery of the unit chip region of the light emitting structure layer 140. That is, when the light emitting structure layer 140 is scribed and separated into unit chips, the first passivation layer 142 is formed to be disposed at the periphery of the light emitting structure layer 140.

The short side width D1 and the scene width D2 of the first passivation layer 142 may be 0.1-10 μm, and the short width D1 and the width D2 may be the same or different.

The first passivation layer 142 is SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , or TiO ₂ It may be formed of at least one of.

Referring to FIG. 5, the second semiconductor layer 114 is formed on the first semiconductor layer 112 on which the current blocking layer 143 and the first passivation layer 142 are formed. The second semiconductor layer 114 is formed of a semiconductor layer doped with a first conductivity type dopant, for example, a compound semiconductor layer including at least one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, or AlInN. Can be. The second semiconductor layer 114 may be formed of the same material or a different material from that of the first semiconductor layer 112.

As the second semiconductor layer 114 is formed, the current blocking layer 143 and the first passivation layer 142 are disposed between the first semiconductor layer 112 and the second semiconductor layer 114. It is embedded in the semiconductor layer 110 of the first conductivity type. However, the side surface of the first passivation layer 142 is exposed to the outside.

The active layer 120 is formed on the second semiconductor layer 114, that is, the first conductive semiconductor layer 110, and the second conductive semiconductor layer 130 is formed on the active layer 120. Is formed.

The active layer 120 may be formed of a single quantum well or multiple quantum well (MQW) structure, and may be formed of InGaN / GaN or AlGaN / GaN. In addition, a conductive clad layer (not shown) may be formed on or under the active layer 120. The conductive clad layer may be formed of an AlGaN-based semiconductor.

The second conductivity type semiconductor layer 130 is formed on the active layer 120. The second conductive semiconductor layer 130 is a semiconductor layer doped with a second conductive dopant, for example, a compound semiconductor layer including at least one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, or AlInN. It may include. When the second conductive semiconductor layer 130 is a p-type semiconductor layer, the second conductive dopant may be a p-type dopant and may include Mg, Zn, Ca, Sr, and Ba.

In another embodiment, the light emitting structure layer 105 may be a p-type semiconductor layer, and the second conductive semiconductor layer 130 may be an n-type semiconductor layer. The third conductive semiconductor layer, for example, an n-type semiconductor layer or a p-type semiconductor layer may be implemented on the second conductive semiconductor layer 130. That is, the light emitting structure layer 105 may be implemented by any one of an n-p junction, a p-n junction, an n-p-n junction, or a p-n-p junction structure.

Referring to FIG. 6, a first isolation etch is performed to selectively remove the second conductive semiconductor layer 130, the active layer 120, and the second semiconductor layer 114. The second conductive semiconductor layer 130, the active layer 120, and the second semiconductor layer 114 of the light emitting structure layer 105 may be divided into unit chips through the first isolation etching. In this case, the first passivation layer 142 is exposed.

In an embodiment, before forming the contact layer 150 and the conductive support member 160 on the light emitting structure layer 105, a first isolation etching is performed to divide a portion of the light emitting structure layer 105 into unit chips. do. The etching method may use a dry etching and / or a wet etching method.

Referring to FIG. 7, a second passivation layer 144 is formed on the first passivation layer 142. The second passivation layer 144 is disposed on side surfaces of the second semiconductor layer 114, the active layer 120, and the second conductive semiconductor layer 130. In addition, the second passivation layer 144 may be formed around the upper surface of the second conductive semiconductor layer 130.

The second passivation layer 144 may be SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , or TiO ₂ It may be formed of at least one of, and may be formed of the same material as the first passivation layer 144.

Referring to FIG. 8, a contact layer 150 is formed on the second conductive semiconductor layer 130 and the second passivation layer 144.

The contact layer 150 may be formed only on an upper surface of the second conductive semiconductor layer 130, but is not limited thereto. For example, the contact layer 150 may include at least one of Al, Ag, Pd, Rh, ITO, Pt, or Ir.

9, the conductive support member 160 is formed on the contact layer 150.

The conductive support member 160 may be formed by, for example, a bonding method or a plating method, and may include titanium (Ti), chromium (Cr), nickel (Ni), aluminum (Al), platinum (Pt), and gold ( Au), tungsten (W), copper (Cu), molybdenum (Mo), or a carrier wafer (eg, Si, Ge, GaAs, ZnO, SiC, SiGe, GaN, etc.).

Referring to FIG. 10, after the conductive support member 160 is formed, the growth substrate 101 is removed. FIG. 10 illustrates the structure shown in FIG. 9 upside down.

The growth substrate 101 may be formed by a physical or / and chemical removal method. For example, the physical removal method may be used as a laser lift off (LLO) method of removing the growth substrate 101 by irradiating a laser having a predetermined wavelength on the growth substrate 101. In addition, in the chemical method, a wet etching solution may be injected into a predetermined semiconductor layer (eg, buffer layer) space on the growth substrate 101 to remove the growth substrate 101.

When the growth substrate 101 is removed, the first semiconductor layer 112 is exposed.

Referring to FIG. 11, a second isolation etch is performed to selectively remove the first semiconductor layer 112. The first semiconductor layer 112 of the light emitting structure layer 105 is divided into unit chips through the second isolation etching. In this case, the first passivation layer 142 is exposed. The etching method may use a dry etching and / or a wet etching method.

The light emitting structure layer 105 is separated in units of chips through the above-described first isolation etching and second isolation etching processes.

In addition, a process of polishing the upper surface of the first semiconductor layer 112 by an inductively coupled plasma / reactive ion etching (ICP / RIE) method may be performed, but is not limited thereto. A predetermined concave-convex pattern (not shown) may be formed on an upper surface of the first semiconductor layer 112 of the first conductive semiconductor layer 110.

In addition, an electrode 171 may be formed on an upper surface of the first semiconductor layer 112 of the first conductivity type semiconductor layer 110. The electrode 171 may be formed before or after chip separation, but is not limited thereto.

The light emitting device 100 is separated by a chip unit while the contact layer 150 and the conductive support member 160 are separated by using an expanding and breaking process after the second isolation etching.

In this way, the light emitting device 100 according to the embodiment may be manufactured.

12 is a view for explaining a light emitting device according to the second embodiment.

In the description of the light emitting device according to the second embodiment, a description overlapping with the description of the light emitting device according to the first embodiment will be omitted.

Referring to FIG. 12, the light emitting device according to the second embodiment includes a conductive support member 160, a contact layer 150 on the conductive support member 160, and a light emitting structure layer 105 on the contact layer 150. ), An electrode 171 on the light emitting structure layer 105, a passivation layer 140 disposed on a side surface of the light emitting structure layer 105, and at least a part of which is disposed inside the light emitting structure layer 105. At least a portion of the electrode 171 overlaps the vertical direction and includes a current blocking layer 145 disposed between the light emitting structure layer 105 and the contact layer 150.

In the first embodiment described above, the current blocking layer 145 is disposed inside the first conductive semiconductor layer 110, that is, between the first semiconductor layer 112 and the second semiconductor layer 114. The first passivation layer 142 is disposed on the same horizontal plane.

However, in the second embodiment, the current blocking layer 145 is formed between the light emitting structure layer 105 and the contact layer 150 and is disposed on the same horizontal plane as the second passivation layer 144.

The current blocking layer 145 may be formed on the second conductive semiconductor layer 130 in the process of forming the second passivation layer 144 in the process described with reference to FIG. 7.

As the current blocking layer 145 contacts the second conductive semiconductor layer 130, the current spreading effect by the current blocking layer 145 may be further increased.

Although the embodiment has described a light emitting device such as an LED as an example, it can be applied to other semiconductor devices that can be formed on the growth substrate, and the technical features are not limited to the above embodiment.

13 is a cross-sectional view of a light emitting device package 200 including a light emitting device 100 according to embodiments.

Referring to FIG. 13, the light emitting device package 200 according to the embodiment includes a body 20, a first electrode 31 and a second electrode 32 installed on the body 20, and the body 20. A light emitting device 100 according to the first embodiment or the second embodiments, which is installed at and supplied power from the first electrode 31 and the second electrode 32, and surrounds the light emitting device 100. The molding member 40 is included.

The body 20 may include a silicon material, a synthetic resin material, or a metal material, and an inclined surface may be formed around the light emitting device 100.

The first electrode 31 and the second electrode 32 are electrically separated from each other, and provide power to the light emitting device 100.

In addition, the first and second electrodes 31 and 32 may increase light efficiency by reflecting light generated from the light emitting device 100, and discharge heat generated from the light emitting device 100 to the outside. It can also play a role.

The light emitting device 100 may be installed on any one of the first electrode 31, the second electrode 32, and the body 20. The first and second electrodes may be disposed by a wire method, a die bonding method, or the like. It may be electrically connected to (31, 32), but is not limited thereto.

The molding member 40 may surround the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 40 may include a phosphor to change the wavelength of the light emitted from the light emitting device 100.

As described above, the light emitting device 100 and the light emitting device package 200 including the same according to the embodiments include the first passivation layer 142 and the second passivation layer 144, thereby providing excellent electrical characteristics and moisture. The light emitting structure layer 105 may be protected from an external environment such as to improve light emission efficiency.

In addition, the light emitting device package 200 may include a chip on board (COB) type, and an upper surface of the body 20 may be flat, and a plurality of light emitting devices 100 may be installed on the body 20. .

A plurality of light emitting device packages 200 according to an embodiment are arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, a fluorescent sheet, or the like, which is an optical member, is disposed on a path of light emitted from the light emitting device package 200. Can be. The light emitting device package 200, the substrate, and the optical member may function as a backlight unit. Another embodiment may be implemented as a lighting unit including the semiconductor light emitting device 100 or the light emitting device package 200 described in the above embodiments, for example, the lighting unit may be a display device, an indicator device, a lamp , Can include street lights.

14 is a view illustrating a backlight unit including a light emitting device or a light emitting device package according to an embodiment. However, the backlight unit 1100 of FIG. 14 is an example of a lighting system, but is not limited thereto.

Referring to FIG. 14, the backlight unit 1100 may include a bottom cover 1140, an optical guide member 1120 disposed in the bottom cover 1140, and at least one side or lower surface of the optical guide member 1120. It may include a light emitting module 1110 disposed in. In addition, a reflective sheet 1130 may be disposed under the light guide member 1120.

The bottom cover 1140 may be formed by forming a box having an upper surface open to accommodate the light guide member 1120, the light emitting module 1110, and the reflective sheet 1130. Or it may be formed of a resin material but is not limited thereto.

The light emitting module 1110 may include a substrate 300 and a light emitting device 100 or a light emitting device package 200 according to a plurality of embodiments mounted on the substrate 300. The light emitting device 100 or the light emitting device package 200 according to the plurality of embodiments may provide light to the light guide member 1120. However, in the drawing, it is illustrated that the light emitting device package 200 is installed on the substrate 300.

As shown, the light emitting module 1110 may be disposed on at least one of the inner side surfaces of the bottom cover 1140, thereby providing light toward at least one side of the light guide member 1120. have.

However, the light emitting module 1110 may be disposed under the bottom cover 1140 to provide light toward the bottom surface of the light guide member 1120, which may vary depending on the design of the backlight unit 1100. The present invention is not limited thereto because it can be modified.

The light guide member 1120 may be disposed in the bottom cover 1140. The light guide member 1120 may guide the light provided from the light emitting module 1110 to a display panel by surface light source.

The light guide member 1120 may be, for example, a light guide panel (LGP). The light guide plate may be formed of, for example, one of an acrylic resin series such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), COC, or polyethylene naphthalate (PEN) resin.

The optical sheet 1150 may be disposed above the light guide member 1120.

The optical sheet 1150 may include at least one of, for example, a diffusion sheet, a light collecting sheet, a luminance rising sheet, or a fluorescent sheet. For example, the optical sheet 1150 may be formed by stacking the diffusion sheet, the light collecting sheet, the luminance increasing sheet, and the fluorescent sheet. In this case, the diffusion sheet 1150 may evenly diffuse the light emitted from the light emitting module 1110, and the diffused light may be focused onto a display panel (not shown) by the light collecting sheet. In this case, the light emitted from the light collecting sheet is randomly polarized light, and the luminance increasing sheet may increase the degree of polarization of the light emitted from the light collecting sheet. The light collecting sheet may be, for example, a horizontal or / and vertical prism sheet. In addition, the luminance increase sheet may be, for example, a roughness enhancement film. In addition, the fluorescent sheet may be a translucent plate or film containing a phosphor.

The reflective sheet 1130 may be disposed under the light guide member 1120. The reflective sheet 1130 may reflect light emitted through the bottom surface of the light guide member 1120 toward the exit surface of the light guide member 1120.

The reflective sheet 1130 may be formed of a resin material having good reflectance, for example, PET, PC, PVC resin, etc., but is not limited thereto.

15 is a perspective view of an illumination unit 1200 including a light emitting device 100 or a light emitting device package 200 according to an embodiment. However, the lighting unit 1200 of FIG. 15 is an example of a lighting system, but is not limited thereto.

Referring to FIG. 15, the lighting unit 1200 is installed in the case body 1210, the light emitting module unit 1230 installed in the case body 1210, and the case body 1210, and supplies power from an external power source. It may include a connection terminal 1220 provided.

The case body 1210 is preferably formed of a material having good heat dissipation characteristics, for example, may be formed of a metal material or a resin material.

The light emitting module unit 1230 may include a substrate 300 and a light emitting device 100 or a light emitting device package 200 according to at least one embodiment mounted on the substrate 300. However, in the embodiment, the light emitting device package 200 is illustrated on the substrate 300.

The substrate 1232 may be a circuit pattern printed on an insulator, and for example, a general printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, and the like. It may include.

In addition, the substrate 300 may be formed of a material that reflects light efficiently, or the surface may be formed of a color that reflects light efficiently, for example, white, silver, or the like.

The light emitting device package 200 according to the at least one embodiment may be mounted on the substrate 300. Each of the light emitting device packages 200 may include at least one light emitting diode (LED). The light emitting diodes may include colored light emitting diodes emitting red, green, blue, or white colored light, and UV light emitting diodes emitting ultraviolet (UV) light.

The light emitting module unit 1230 may be arranged to have a combination of various light emitting devices to obtain color and luminance. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be combined to secure high color rendering (CRI). In addition, a fluorescent sheet may be further disposed on a traveling path of the light emitted from the light emitting module unit 1230, and the fluorescent sheet changes the wavelength of light emitted from the light emitting module unit 1230. For example, when the light emitted from the light emitting module unit 1230 has a blue wavelength band, the fluorescent sheet may include a yellow phosphor, and the light emitted from the light emitting module unit 1230 is finally passed through the fluorescent sheet. It is shown as white light.

The connection terminal 1220 may be electrically connected to the light emitting module unit 1230 to supply power. According to FIG. 15, the connection terminal 1220 is inserted into and coupled to an external power source in a socket manner, but is not limited thereto. For example, the connection terminal 1220 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by a wire.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

Claims (10)

Conductive support members;
A light emitting layer comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer on the conductive support member Structural layer;
An electrode on the light emitting structure layer;
A passivation layer disposed on a side surface of the light emitting structure layer and partially disposed inside the first conductive semiconductor layer; And
Light emitting device comprising a current blocking layer disposed between the electrode and the conductive support member. The method of claim 1,
The first conductive semiconductor layer includes a first semiconductor layer and a second semiconductor layer, and a portion of the passivation layer is disposed between the first semiconductor layer and the second semiconductor layer. The method of claim 1,
The current blocking layer is disposed inside the first conductive semiconductor layer,
At least a portion of the current blocking layer overlaps with the electrode in a vertical direction. The method of claim 1,
And the current blocking layer is disposed on the same horizontal plane as a portion of the passivation layer. The method of claim 1,
Further comprising a contact layer between the conductive support member and the light emitting structure layer,
The current blocking layer is disposed between the light emitting structure layer and the contact layer. 6. The method of claim 5,
And a portion of the passivation layer is disposed between the contact layer and the light emitting structure layer. The method of claim 1,
The passivation layer is disposed on a side of a portion of the semiconductor layer of the first conductivity type, the side of the active layer, the side of the semiconductor layer of the second conductivity type. Forming a first semiconductor layer that is part of a first conductive semiconductor layer on the growth substrate;
Forming a current blocking layer and a first passivation layer on the first semiconductor layer;
Forming a second semiconductor layer that is part of the first conductive semiconductor layer on the first semiconductor layer including the current blocking layer and the first passivation layer;
Forming an active layer and a second conductive semiconductor layer on the second semiconductor layer;
Selectively removing the second conductive semiconductor layer, the active layer, and the second semiconductor layer to expose the first passivation layer;
Forming a second passivation layer on the first passivation layer to be disposed on side surfaces of the second conductive semiconductor layer, the active layer, and the second semiconductor layer; And
And forming a contact layer and a conductive support substrate on the second conductive semiconductor layer. The method of claim 8,
Removing the growth substrate and selectively removing the first semiconductor layer to expose the first passivation layer; And
A method of manufacturing a light emitting device, the method comprising: forming an electrode on the first semiconductor layer. The method of claim 9,
And scribing the contact layer and the conductive support substrate.

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