KR20110123798A - 플루오로알칸술폰산암모늄염류 및 그 제조 방법 - Google Patents

플루오로알칸술폰산암모늄염류 및 그 제조 방법 Download PDF

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Publication number
KR20110123798A
KR20110123798A KR1020117023367A KR20117023367A KR20110123798A KR 20110123798 A KR20110123798 A KR 20110123798A KR 1020117023367 A KR1020117023367 A KR 1020117023367A KR 20117023367 A KR20117023367 A KR 20117023367A KR 20110123798 A KR20110123798 A KR 20110123798A
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KR
South Korea
Prior art keywords
group
general formula
formula
carbon atoms
represented
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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KR1020117023367A
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English (en)
Korean (ko)
Inventor
마사시 나가모리
유지 하기와라
다카시 마스부치
사토루 나리즈카
Original Assignee
샌트랄 글래스 컴퍼니 리미티드
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Publication of KR20110123798A publication Critical patent/KR20110123798A/ko
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C313/00—Sulfinic acids; Sulfenic acids; Halides, esters or anhydrides thereof; Amides of sulfinic or sulfenic acids, i.e. compounds having singly-bound oxygen atoms of sulfinic or sulfenic groups replaced by nitrogen atoms, not being part of nitro or nitroso groups
    • C07C313/02—Sulfinic acids; Derivatives thereof
    • C07C313/04—Sulfinic acids; Esters thereof
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C303/00—Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides
    • C07C303/02—Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides of sulfonic acids or halides thereof
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C303/00—Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides
    • C07C303/32—Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides of salts of sulfonic acids
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C07C309/07—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton
    • C07C309/12—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2601/00—Systems containing only non-condensed rings
    • C07C2601/06—Systems containing only non-condensed rings with a five-membered ring
    • C07C2601/08—Systems containing only non-condensed rings with a five-membered ring the ring being saturated
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2601/00—Systems containing only non-condensed rings
    • C07C2601/12—Systems containing only non-condensed rings with a six-membered ring
    • C07C2601/14—The ring being saturated
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2602/00—Systems containing two condensed rings
    • C07C2602/36—Systems containing two condensed rings the rings having more than two atoms in common
    • C07C2602/42—Systems containing two condensed rings the rings having more than two atoms in common the bicyclo ring system containing seven carbon atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00—Systems containing at least three condensed rings
    • C07C2603/56—Ring systems containing bridged rings
    • C07C2603/58—Ring systems containing bridged rings containing three rings
    • C07C2603/70—Ring systems containing bridged rings containing three rings containing only six-membered rings
    • C07C2603/74—Adamantanes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Low-Molecular Organic Synthesis Reactions Using Catalysts (AREA)
KR1020117023367A 2009-03-12 2010-03-12 플루오로알칸술폰산암모늄염류 및 그 제조 방법 Ceased KR20110123798A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2009058844 2009-03-12
JPJP-P-2009-058844 2009-03-12
JP2010054088A JP5549288B2 (ja) 2009-03-12 2010-03-11 フルオロアルカンスルホン酸アンモニウム塩類およびその製造方法
JPJP-P-2010-054088 2010-03-11

Publications (1)

Publication Number Publication Date
KR20110123798A true KR20110123798A (ko) 2011-11-15

Family

ID=42728462

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117023367A Ceased KR20110123798A (ko) 2009-03-12 2010-03-12 플루오로알칸술폰산암모늄염류 및 그 제조 방법

Country Status (4)

Country Link
US (1) US8877960B2 (https=)
JP (1) JP5549288B2 (https=)
KR (1) KR20110123798A (https=)
WO (1) WO2010104177A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2598301B1 (en) 2010-07-30 2014-08-20 Coopervision International Holdings Company, LP Ophthalmic device molds formed from vinyl alcohol copolymer, ophthalmic devices molded therein, and related methods
US9156785B2 (en) * 2010-11-15 2015-10-13 Rohm And Haas Electronic Materials Llc Base reactive photoacid generators and photoresists comprising same
EP2472322A2 (en) * 2010-12-31 2012-07-04 Rohm and Haas Electronic Materials LLC Photoacid generating monomer and precursor thereof
US10831100B2 (en) 2017-11-20 2020-11-10 Rohm And Haas Electronic Materials, Llc Iodine-containing photoacid generators and compositions comprising the same

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6749987B2 (en) 2000-10-20 2004-06-15 Fuji Photo Film Co., Ltd. Positive photosensitive composition
JP4150509B2 (ja) 2000-11-20 2008-09-17 富士フイルム株式会社 ポジ型感光性組成物
TWI314250B (en) 2002-02-19 2009-09-01 Sumitomo Chemical Co Positive resist composition
JP2004004561A (ja) 2002-02-19 2004-01-08 Sumitomo Chem Co Ltd ポジ型レジスト組成物
JP4103523B2 (ja) 2002-09-27 2008-06-18 Ｊｓｒ株式会社 レジスト組成物
JP4816921B2 (ja) 2005-04-06 2011-11-16 信越化学工業株式会社 新規スルホン酸塩及びその誘導体、光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
TWI332122B (en) 2005-04-06 2010-10-21 Shinetsu Chemical Co Novel sulfonate salts and derivatives, photoacid generators, resist compositions and patterning process
JP5124806B2 (ja) * 2006-06-27 2013-01-23 信越化学工業株式会社 光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
JP5124805B2 (ja) 2006-06-27 2013-01-23 信越化学工業株式会社 光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
US8361691B2 (en) 2006-09-08 2013-01-29 Jsr Corporation Radiation-sensitive composition and process for producing low-molecular compound for use therein
US7956142B2 (en) 2006-11-10 2011-06-07 Jsr Corporation Polymerizable sulfonic acid onium salt and resin
US7527913B2 (en) * 2007-01-25 2009-05-05 Samsung Electronics Co., Ltd. Photoacid generators, photoresist composition including the same and method of forming pattern using the same
KR20110133065A (ko) 2007-02-15 2011-12-09 샌트랄 글래스 컴퍼니 리미티드 광산발생제용 화합물 및 이를 사용한 레지스트 조성물, 패턴 형성방법
WO2009037980A1 (ja) * 2007-09-18 2009-03-26 Central Glass Company, Limited ２－ブロモ－２，２－ジフルオロエタノール及び２－（アルキルカルボニルオキシ）－１，１－ジフルオロエタンスルホン酸塩類の製造方法
WO2009037981A1 (ja) * 2007-09-18 2009-03-26 Central Glass Company, Limited ２－（アルキルカルボニルオキシ）－１，１－ジフルオロエタンスルホン酸塩類およびその製造方法

Also Published As

Publication number Publication date
JP5549288B2 (ja) 2014-07-16
JP2010235600A (ja) 2010-10-21
US20110313190A1 (en) 2011-12-22
WO2010104177A1 (ja) 2010-09-16
US8877960B2 (en) 2014-11-04

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