KR20110109900A - 태양전지 - Google Patents

태양전지 Download PDF

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Publication number
KR20110109900A
KR20110109900A KR1020110025809A KR20110025809A KR20110109900A KR 20110109900 A KR20110109900 A KR 20110109900A KR 1020110025809 A KR1020110025809 A KR 1020110025809A KR 20110025809 A KR20110025809 A KR 20110025809A KR 20110109900 A KR20110109900 A KR 20110109900A
Authority
KR
South Korea
Prior art keywords
semiconductor layer
conductive semiconductor
electrode
solar cell
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020110025809A
Other languages
English (en)
Korean (ko)
Inventor
시게노부 세키네
유리나 세키네
요시하루 구와나
Original Assignee
유겐가이샤 나프라
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 유겐가이샤 나프라 filed Critical 유겐가이샤 나프라
Publication of KR20110109900A publication Critical patent/KR20110109900A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H10F77/223—Arrangements for electrodes of back-contact photovoltaic cells for metallisation wrap-through [MWT] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Photovoltaic Devices (AREA)
KR1020110025809A 2010-03-29 2011-03-23 태양전지 Withdrawn KR20110109900A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2010-074919 2010-03-29
JP2010074919A JP2011210802A (ja) 2010-03-29 2010-03-29 太陽電池

Publications (1)

Publication Number Publication Date
KR20110109900A true KR20110109900A (ko) 2011-10-06

Family

ID=44280931

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110025809A Withdrawn KR20110109900A (ko) 2010-03-29 2011-03-23 태양전지

Country Status (6)

Country Link
US (1) US20110232740A1 (https=)
EP (1) EP2372778A2 (https=)
JP (1) JP2011210802A (https=)
KR (1) KR20110109900A (https=)
CN (1) CN102208457A (https=)
TW (1) TW201145540A (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5896378B2 (ja) * 2012-08-30 2016-03-30 日立造船株式会社 Ｃｎｔ太陽電池
JP2016058408A (ja) * 2013-01-31 2016-04-21 パナソニック株式会社 光起電力装置
CN105405909B (zh) * 2015-12-18 2017-01-25 英利能源（中国）有限公司 Mwt太阳能电池
CN111244231A (zh) * 2020-01-21 2020-06-05 浙江晶科能源有限公司 一种新型太阳能电池及其制备方法、一种光伏系统
CN112310233B (zh) * 2020-10-16 2022-06-14 泰州隆基乐叶光伏科技有限公司 太阳电池及生产方法、电池组件

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5468652A (en) * 1993-07-14 1995-11-21 Sandia Corporation Method of making a back contacted solar cell
AUPM483494A0 (en) * 1994-03-31 1994-04-28 Pacific Solar Pty Limited Multiple layer thin film solar cells
US7170001B2 (en) * 2003-06-26 2007-01-30 Advent Solar, Inc. Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias
US20060130891A1 (en) * 2004-10-29 2006-06-22 Carlson David E Back-contact photovoltaic cells
US20070023082A1 (en) * 2005-07-28 2007-02-01 Venkatesan Manivannan Compositionally-graded back contact photovoltaic devices and methods of fabricating such devices
KR101212198B1 (ko) * 2006-04-06 2012-12-13 삼성에스디아이 주식회사 태양 전지
DE102006027737A1 (de) * 2006-06-10 2007-12-20 Hahn-Meitner-Institut Berlin Gmbh Einseitig kontaktierte Solarzelle mit Durchkontaktierungen und Verfahren zur Herstellung
CN101017858A (zh) * 2007-01-10 2007-08-15 北京市太阳能研究所有限公司 一种背接触式太阳能电池及其制作方法
JP5258325B2 (ja) * 2007-03-29 2013-08-07 京セラ株式会社 太陽電池モジュール
JP5111063B2 (ja) * 2007-11-12 2012-12-26 シャープ株式会社 光電変換素子及びその製造方法
US7964499B2 (en) * 2008-05-13 2011-06-21 Samsung Electronics Co., Ltd. Methods of forming semiconductor solar cells having front surface electrodes
GB0820684D0 (en) * 2008-11-12 2008-12-17 Silicon Cpv Plc Photovoltaic solar cells
US8115097B2 (en) * 2009-11-19 2012-02-14 International Business Machines Corporation Grid-line-free contact for a photovoltaic cell

Also Published As

Publication number Publication date
JP2011210802A (ja) 2011-10-20
TW201145540A (en) 2011-12-16
US20110232740A1 (en) 2011-09-29
EP2372778A2 (en) 2011-10-05
CN102208457A (zh) 2011-10-05

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Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20110323

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid