KR20110091944A - The method for manufacturing semiconductor device - Google Patents
The method for manufacturing semiconductor device Download PDFInfo
- Publication number
- KR20110091944A KR20110091944A KR1020100011313A KR20100011313A KR20110091944A KR 20110091944 A KR20110091944 A KR 20110091944A KR 1020100011313 A KR1020100011313 A KR 1020100011313A KR 20100011313 A KR20100011313 A KR 20100011313A KR 20110091944 A KR20110091944 A KR 20110091944A
- Authority
- KR
- South Korea
- Prior art keywords
- gate pattern
- cell region
- gate
- forming
- spacer
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823475—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type interconnection or wiring or contact manufacturing related aspects
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a method for manufacturing a semiconductor device capable of improving short failing between a contact and a gate pattern of a dummy cell region.
One of the most important parameters in the manufacture of transistors of semiconductor devices is the threshold voltage (Vt).
The threshold voltage is a variable that depends on the gate oxide thickness, the channel doping concentration, the oxide charge and the material used for the gate.
As the size of the device decreases, the threshold voltage is inconsistent with theoretical values. The problem currently encountered is the short channel effect that occurs as the gate channel length decreases.
In general, a process of forming a junction area in a semiconductor device manufacturing process forms a light doped drain (LDD) junction before a source / drain junction, in this case, after a gate is formed. Selective oxidation, LDD ion implantation, spacer formation, source drain ion implantation, and rapid thermal annealing (RTA) are performed in this order.
Among the semiconductor devices including the cell region and the dummy cell region, the outermost dummy gate CD (Critical Dimension) is largely formed to form an accurate pattern of the main cell region.
In the case where the outermost dummy gate is partially overlapped with the active region and the device isolation region of the cell region, the lower recess region of each region causes a failure due to the landing plug and short of the upper region. There is a problem.
1A and 1B are cross-sectional views illustrating a problem of a method of manufacturing a semiconductor device according to the prior art.
Referring to FIG. 1A, an
Next, after the photoresist film is formed on the
Next, after the
Here, the width X between the
In order to solve the above-mentioned conventional problems, the present invention is subsequently formed by forming a spacer material on the sidewalls and the top of the gate pattern of the dummy cell region to make the width between the gates of the dummy cell region equal to the gate width of the cell region. Provided is a method of manufacturing a semiconductor device capable of preventing a short between a contact and a gate pattern of a dummy cell region by securing a self-aligned contact (SAC) margin during the process.
The present invention provides a method of forming a gate pattern on a semiconductor substrate including a cell region and a dummy cell region. Etching the first insulating layer with an etch mask using a mask that partially exposes a portion thereof, forming a spacer on sidewalls and an upper portion of the gate pattern, forming a second insulating layer on the entire surface including the spacer, and contacting And etching the second and first insulating layers until the semiconductor substrate is exposed by a mask, and then filling a conductive material to form a contact.
Preferably, the first and second insulating films are formed of a boro-phospho silicate glass (BPSG) film.
Preferably, forming the spacer on the sidewalls and the upper portion of the gate pattern comprises depositing a spacer material on the entire surface including the gate pattern of the dummy cell region and the spacer material until the first insulating layer is exposed. Etching back.
Preferably, the spacer is formed of a nitride film (Nitride).
The method may further include forming a bit line connected to the contact after the forming of the contact.
Preferably, the width between the gate pattern of the dummy cell region and the width of the gate pattern of the cell region are the same.
The present invention forms a spacer material on the sidewalls and the top of the gate pattern of the dummy cell region to make the width between the gates of the dummy cell region the same as the gate width of the cell region. It is possible to prevent the short between the contact and the gate pattern of the dummy cell region.
1A and 1B are cross-sectional views illustrating a problem of a method of manufacturing a semiconductor device according to the prior art.
2A to 2F are cross-sectional views illustrating a method of forming a semiconductor device in accordance with the present invention.
Hereinafter, exemplary embodiments will be described in detail with reference to the accompanying drawings.
2A to 2F are cross-sectional views illustrating a method of forming a semiconductor device in accordance with the present invention.
Referring to FIG. 2A, an
Next, after the photoresist film is formed on the
Next, the
Next, an
Next, after the photoresist film is formed on the
Referring to FIG. 2B, the
Referring to FIG. 2C, the
Referring to FIG. 2D, the
Referring to FIG. 2E, an insulating
Referring to FIG. 2F, after the photoresist film is formed on the entire surface including the insulating
Thereafter, a
As described above, the present invention forms a spacer material on the sidewall and the top of the gate pattern of the dummy cell region to make the width between the gates of the dummy cell region equal to the gate width of the cell region. -Aligned Contact Provides a margin to prevent short between the contact and the gate pattern of the dummy cell area.
It will be apparent to those skilled in the art that various modifications, additions, and substitutions are possible, and that various modifications, additions and substitutions are possible, within the spirit and scope of the appended claims. As shown in Fig.
Claims (6)
Forming a first insulating film on the entire surface including the gate pattern;
Etching the first insulating layer with an etch mask using a mask partially exposing sidewalls and an upper portion of the gate pattern in the dummy cell region;
Forming a spacer on sidewalls and top of the gate pattern;
Forming a second insulating film on the entire surface including the spacers; And
Etching the second and first insulating layers until the semiconductor substrate is exposed with a contact mask, and then filling a conductive material to form a contact
Method for manufacturing a semiconductor device comprising a.
And the first and second insulating layers are formed of a boro-phospho silicate glass (BPSG) film.
Forming the spacer
Depositing a spacer material on the entire surface including the gate pattern of the dummy cell region; And
And etching back the spacer material until the first insulating layer is exposed.
The spacer is a method of manufacturing a semiconductor device, characterized in that formed by the nitride (Nitride).
And forming a bit line connected to the contact after the forming of the contact.
And a width between the gate patterns of the dummy cell region and a width between the gate patterns of the cell region is the same.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100011313A KR20110091944A (en) | 2010-02-08 | 2010-02-08 | The method for manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100011313A KR20110091944A (en) | 2010-02-08 | 2010-02-08 | The method for manufacturing semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20110091944A true KR20110091944A (en) | 2011-08-17 |
Family
ID=44928968
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020100011313A KR20110091944A (en) | 2010-02-08 | 2010-02-08 | The method for manufacturing semiconductor device |
Country Status (1)
Country | Link |
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KR (1) | KR20110091944A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9379001B2 (en) | 2013-03-05 | 2016-06-28 | Samsung Electronics Co., Ltd. | Semiconductor device and method of fabricating the same |
-
2010
- 2010-02-08 KR KR1020100011313A patent/KR20110091944A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9379001B2 (en) | 2013-03-05 | 2016-06-28 | Samsung Electronics Co., Ltd. | Semiconductor device and method of fabricating the same |
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