KR20110087242A - 광전지용 시트 - Google Patents
광전지용 시트 Download PDFInfo
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- KR20110087242A KR20110087242A KR1020110007453A KR20110007453A KR20110087242A KR 20110087242 A KR20110087242 A KR 20110087242A KR 1020110007453 A KR1020110007453 A KR 1020110007453A KR 20110007453 A KR20110007453 A KR 20110007453A KR 20110087242 A KR20110087242 A KR 20110087242A
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- South Korea
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Images
Classifications
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
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- H—ELECTRICITY
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
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- C—CHEMISTRY; METALLURGY
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- C—CHEMISTRY; METALLURGY
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- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
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- C09D183/06—Polysiloxanes containing silicon bound to oxygen-containing groups
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
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- H01L31/049—Protective back sheets
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- C—CHEMISTRY; METALLURGY
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
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Abstract
Description
도 3 및 4는 본 발명의 광전지용 시트가 적용된 광전지 모듈의 다양한 예시를 나타내는 도면이다.
실시예 1
(조성물(A)) |
비교예 1
(조성물(C)) |
비교예 2
(조성물(E)) |
|
수분투과성 | 15 g/cm2 day | 101 g/cm2 day | 120 g/cm2 day |
내구신뢰성 | ○ | × | × |
황변 평가 | ○ | ○ | ○ |
12: 기재 23: 고분자 코팅층
3, 4: 광전지 모듈 31, 41: 전면 기판
32a, 32b, 42: 봉지층 33, 43: 활성층
34, 44: 지지기판
Claims (16)
- 규소 원자에 결합하고 있는 아릴기를 가지는 실리콘 수지를 포함하고, 상기에서 실리콘 수지에 포함되는 전체 규소 원자에 대한 상기 아릴기의 몰비가 0.3을 초과하는 수지층을 가지는 광전지용 시트.
- 제 1 항에 있어서, 실리콘 수지에 포함되는 전체 규소 원자에 대한 규소 원자에 결합된 아릴기의 몰 비율이 0.5를 초과하는 광전지용 시트.
- 제 1 항에 있어서, 실리콘 수지에 포함되는 전체 규소 원자에 대한 규소 원자에 결합된 아릴기의 몰 비율이 0.7 이상인 광전지용 시트.
- 제 1 항에 있어서, 실리콘 수지에 포함되는 아릴기가 페닐기인 포함하는 광전지용 시트.
- 제 1 항에 있어서, 실리콘 수지는, 하기 화학식 1의 평균 조성식으로 표시되는 광전지용 시트:
[화학식 1]
(R3SiO1/2)a(R2SiO2/2)b(RSiO3/2)c(SiO4/2)d
상기 화학식 1 내지 3에서, R은, 규소 원자에 직접 결합하고 있는 치환기로서, 각각 독립적으로, 수소, 히드록시기, 에폭시기, 아크릴로일기, 메타크릴로일기, 이소시아네이트기, 알콕시기 또는 1가 탄화수소기를 나타내고, R 중 적어도 하나는 아릴기를 나타내며, a는 0 내지 0.6이고, b는 0 내지 0.97이며, c는 0 내지 0.8이고, d는 0 내지 0.4이며, a+b+c+d는 1이고, b 및 c는 동시에 0이 아니다. - 제 5 항에 있어서, R 중 적어도 하나는 히드록시기, 에폭시기, 아크릴로일기, 메타크릴로일기 또는 비닐기인 광전지용 시트.
- 제 5 항에 있어서, R 중 적어도 하나는 에폭시기인 광전지용 시트.
- 제 5 항에 있어서, 화학식 1의 평균 조성식으로 표시되는 실리콘 수지는, 하기 화학식 2 또는 3의 실록산 단위를 포함하는 광전지용 시트:
[화학식 2]
R1R2SiO2/2
[화학식 3]
R3SiO3/2
상기 화학식 2 또는 3에서, R1 및 R2는 각각 독립적으로 알킬기 또는 아릴기를 나타내되, R1 및 R2 중 적어도 하나는 아릴기를 나타내고, R3는 아릴기를 나타낸다. - 제 8 항에 있어서, 실리콘 수지에 포함되는 규소 원자에 결합된 아릴기가 모두 화학식 2 또는 화학식 3의 실록산 단위에 포함되는 광전지용 시트.
- 제 8 항에 있어서, 화학식 2의 실록산 단위가 하기 화학식 4 및 화학식 5의 실록산 단위로부터 선택되는 하나 이상인 광전지용 시트:
[화학식 4]
(C6H5)CH3SiO2/2
[화학식 5]
(C6H5)2SiO2/2. - 제 8 항에 있어서, 화학식 3의 실록산 단위가 하기 화학식 6의 실록산 단위인 광전지용 시트:
[화학식 6]
(C6H5)SiO3/2. - 제 1 항에 있어서, 실리콘 수지는, 중량평균분자량이 300 내지 100,000인 광전지용 시트.
- 제 1 항에 있어서, 기재를 추가로 포함하고, 상기 수지층은 기재상에 형성되어 있는 광전지용 시트.
- 제 12 항에 있어서, 기재는, 금속 호일, 불소계 중합체 필름, 폴리에스테르계 필름 또는 상기 중 2개 이상의 적층 시트인 광전지용 시트.
- 규소 원자에 결합하고 있는 아릴기를 가지는 실리콘 수지이고, 상기에서 실리콘 수지에 포함되는 전체 규소 원자에 대한 상기 아릴기의 몰비가 0.3을 초과하는 실리콘 수지를 형성할 수 있는 액상의 규소계 재료를 코팅하고, 코팅된 재료를 경화 또는 건조시키는 단계를 거쳐 수지층을 형성하는 과정을 포함하는 광전지용 시트의 제조 방법.
- 제 1 항에 따른 광전지용 시트; 전면 기판; 및 상기 광전지용 시트와 전면 기판의 사이에서 광전 변환 소자를 캡슐화하고 있는 봉지재를 포함하는 광전지 모듈.
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WO2013147979A3 (en) * | 2012-03-14 | 2013-12-27 | Ppg Industries Ohio, Inc. | Coating-encapsulated photovoltaic modules and methods of making same |
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WO2014017887A1 (ko) * | 2012-07-27 | 2014-01-30 | 주식회사 엘지화학 | 경화성 조성물 |
EP2878638B1 (en) * | 2012-07-27 | 2019-05-22 | LG Chem, Ltd. | Hardening composition |
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