KR20110070876A - 홈을 갖는 실리콘 기판 상의 본딩 - Google Patents
홈을 갖는 실리콘 기판 상의 본딩 Download PDFInfo
- Publication number
- KR20110070876A KR20110070876A KR1020117008761A KR20117008761A KR20110070876A KR 20110070876 A KR20110070876 A KR 20110070876A KR 1020117008761 A KR1020117008761 A KR 1020117008761A KR 20117008761 A KR20117008761 A KR 20117008761A KR 20110070876 A KR20110070876 A KR 20110070876A
- Authority
- KR
- South Korea
- Prior art keywords
- adhesive
- transducer
- membrane
- grooves
- microns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000000758 substrate Substances 0.000 title abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract description 6
- 229910052710 silicon Inorganic materials 0.000 title abstract description 6
- 239000010703 silicon Substances 0.000 title abstract description 6
- 239000000853 adhesive Substances 0.000 claims abstract description 118
- 230000001070 adhesive effect Effects 0.000 claims abstract description 118
- 239000012528 membrane Substances 0.000 claims abstract description 96
- 238000000034 method Methods 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims description 10
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 5
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 2
- 239000012530 fluid Substances 0.000 description 65
- 238000005086 pumping Methods 0.000 description 44
- 239000010410 layer Substances 0.000 description 31
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 230000008859 change Effects 0.000 description 8
- 230000008901 benefit Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- -1 for example Chemical compound 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000003287 bathing Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2047—Membrane type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/88—Mounts; Supports; Enclosures; Casings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
- H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Pressure Sensors (AREA)
- Micromachines (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9818708P | 2008-09-18 | 2008-09-18 | |
| US61/098,187 | 2008-09-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20110070876A true KR20110070876A (ko) | 2011-06-24 |
Family
ID=42006580
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020117008761A Ceased KR20110070876A (ko) | 2008-09-18 | 2009-09-18 | 홈을 갖는 실리콘 기판 상의 본딩 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8853915B2 (enExample) |
| EP (1) | EP2332169B1 (enExample) |
| JP (1) | JP2012502824A (enExample) |
| KR (1) | KR20110070876A (enExample) |
| CN (1) | CN102165574A (enExample) |
| WO (1) | WO2010033774A2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8853915B2 (en) | 2008-09-18 | 2014-10-07 | Fujifilm Dimatix, Inc. | Bonding on silicon substrate having a groove |
| CN110902648B (zh) * | 2019-12-06 | 2023-01-17 | 太原科技大学 | 聚合物电解质与金属的超声辅助阳极键合装置及其方法 |
| WO2021118605A1 (en) * | 2019-12-13 | 2021-06-17 | Hewlett-Packard Development Company, L.P. | Fluidic device die |
| WO2025153968A1 (en) * | 2024-01-16 | 2025-07-24 | Luxottica S.R.L. | Hinge for eyeglass frame, frame and eyeglass comprising such a hinge, and method for assembling such a hinge |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55109668A (en) * | 1980-01-07 | 1980-08-23 | Ricoh Co Ltd | Vibrator of ink jet device |
| JP2712602B2 (ja) * | 1989-08-10 | 1998-02-16 | 株式会社村田製作所 | 圧電共振子の製造方法 |
| EP0468052B1 (en) * | 1990-02-09 | 1996-11-06 | Toyo Communication Equipment Co. Ltd. | Structure for holding ultrathin plate piezoelectric resonator in package |
| JP3052336B2 (ja) * | 1990-05-29 | 2000-06-12 | セイコーエプソン株式会社 | インクジェットヘッド |
| JP3175301B2 (ja) | 1992-06-03 | 2001-06-11 | セイコーエプソン株式会社 | インクジェット記録ヘッド及びインクジェット記録ヘッドの製造方法 |
| US6688718B1 (en) * | 1999-07-02 | 2004-02-10 | Hewlett-Packard Development Company, L.P. | Heat transfer device for an inkjet printer |
| JP4361658B2 (ja) * | 2000-02-14 | 2009-11-11 | 富士通マイクロエレクトロニクス株式会社 | 実装基板及び実装方法 |
| JP2002210965A (ja) | 2001-01-17 | 2002-07-31 | Seiko Epson Corp | ノズルプレート及びインクジェット式記録ヘッド並びにインクジェット式記録装置 |
| US6856075B1 (en) * | 2001-06-22 | 2005-02-15 | Hutchinson Technology Incorporated | Enhancements for adhesive attachment of piezoelectric motor elements to a disk drive suspension |
| JP2003157565A (ja) * | 2001-11-21 | 2003-05-30 | Ricoh Co Ltd | 波面収差補正ミラー及び該ミラーを用いた光ディスク装置 |
| US6794958B2 (en) * | 2002-07-25 | 2004-09-21 | Agilent Technologies, Inc. | Method of fabricating a semiconductor device and an apparatus embodying the method |
| US7266868B2 (en) * | 2003-06-30 | 2007-09-11 | Brother Kogyo Kabushiki Kaisha | Method of manufacturing liquid delivery apparatus |
| JP2005104038A (ja) * | 2003-09-30 | 2005-04-21 | Fuji Photo Film Co Ltd | 吐出ヘッド及び液吐出装置 |
| WO2005037558A2 (en) * | 2003-10-10 | 2005-04-28 | Dimatix, Inc. | Print head with thin membrane |
| US7048361B2 (en) * | 2003-11-05 | 2006-05-23 | Xerox Corporation | Ink jet apparatus |
| US20050247990A1 (en) * | 2004-05-05 | 2005-11-10 | Ming-Te Cheng | Image sensor packages and method of assembling the same |
| JP2006076128A (ja) | 2004-09-09 | 2006-03-23 | Fuji Xerox Co Ltd | インクジェット記録ヘッド |
| US7448732B2 (en) * | 2004-09-30 | 2008-11-11 | Fujifilm Corporation | Liquid ejection head and manufacturing method thereof |
| WO2006047326A1 (en) * | 2004-10-21 | 2006-05-04 | Fujifilm Dimatix, Inc. | Sacrificial substrate for etching |
| JP4520317B2 (ja) * | 2005-01-25 | 2010-08-04 | パナソニック株式会社 | 超音波探触子、超音波診断装置及び超音波探傷装置 |
| JP4929598B2 (ja) * | 2005-02-07 | 2012-05-09 | 富士ゼロックス株式会社 | 液滴吐出ヘッド、及び、液滴吐出装置 |
| EP1907212B1 (en) * | 2005-07-13 | 2012-10-24 | Fujifilm Dimatix, Inc. | Method and apparatus for scalable droplet ejection manufacturing |
| US7683524B2 (en) * | 2005-08-31 | 2010-03-23 | Xinetics, Inc. | Multichannel, surface parallel, zonal transducer system |
| US20070120896A1 (en) * | 2005-11-30 | 2007-05-31 | Xerox Corporation | Drop generator |
| US20070263038A1 (en) * | 2006-05-12 | 2007-11-15 | Andreas Bibl | Buried heater in printhead module |
| WO2010033334A1 (en) * | 2008-09-18 | 2010-03-25 | Fujifilm Corporation | Bonding on silicon substrate |
| US8853915B2 (en) | 2008-09-18 | 2014-10-07 | Fujifilm Dimatix, Inc. | Bonding on silicon substrate having a groove |
-
2009
- 2009-09-18 US US12/562,618 patent/US8853915B2/en active Active
- 2009-09-18 JP JP2011527984A patent/JP2012502824A/ja active Pending
- 2009-09-18 KR KR1020117008761A patent/KR20110070876A/ko not_active Ceased
- 2009-09-18 CN CN200980137309.2A patent/CN102165574A/zh active Pending
- 2009-09-18 EP EP09815247.3A patent/EP2332169B1/en active Active
- 2009-09-18 WO PCT/US2009/057433 patent/WO2010033774A2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2010033774A3 (en) | 2010-06-03 |
| US20100066206A1 (en) | 2010-03-18 |
| WO2010033774A2 (en) | 2010-03-25 |
| EP2332169A2 (en) | 2011-06-15 |
| EP2332169B1 (en) | 2016-02-24 |
| US8853915B2 (en) | 2014-10-07 |
| CN102165574A (zh) | 2011-08-24 |
| HK1157936A1 (zh) | 2012-07-06 |
| EP2332169A4 (en) | 2013-05-29 |
| JP2012502824A (ja) | 2012-02-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20110418 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20140826 Comment text: Request for Examination of Application |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20151119 Patent event code: PE09021S01D |
|
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 20160429 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20151119 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |