KR20110064031A - Device for semiconductor's diffusion step including quatz boat and its using method - Google Patents

Abstract

PURPOSE: A semiconductor wafer diffusing device with a quartz boat and diffusing process using the same are provided to apply a bi-pitch method or a narrow-pitch method to a quartz boat, thereby increasing the amount of producing processed wafers by loading more wafers. CONSTITUTION: An upper slot, a lower slot, and a support stand are loaded on a wafer(930). A plurality of protrusion units is included in the combining unit of the upper and lower slots. A first protrusion unit(910) and a second protrusion unit(920) have different widths. The width of the first protrusion unit has a lower width which is 1.0 to 2.0 mm. The width of the second protrusion unit has a lower width which is 2.0 to 3.0 mm.

Description

Device for semiconductor wafer diffusion process including quartz boat and diffusion process using same {Device for semiconductor's diffusion step including Quatz Boat and its using method}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer diffusion process apparatus and a diffusion process, wherein more wafers are applied by applying a bi-pitch or narrow-pitch method to a boat for a semiconductor wafer process. The present invention relates to a quartz boat, a diffusion process apparatus including the quartz boat, and a diffusion process capable of increasing the yield by loading the same. In particular, the present invention relates to a wafer diffusion process apparatus and a diffusion process that can be used in the production of solar cells.

In general, in order to manufacture a semiconductor device, various processes such as a photo process, a diffusion process, a thin film deposition process, an etching process, and a metal wiring process must be performed selectively and repeatedly. Among these processes, a diffusion process is a process of diffusing impurity particles on a wafer so as to have required electrical characteristics, and a process of using a diffusion phenomenon in which a material moves from a high concentration to a low concentration equilibrium. .

The diffusion process is performed by placing a wafer in the diffusion path, and spraying the process gas containing the impurity particles into the diffusion path to diffuse the impurity particles on the wafer. Diffusion equipment in which the diffusion process is performed may be classified into a vertical type and a horizontal type according to a method of loading and unloading a wafer.

In particular, in the method of loading the wafer in a horizontal type, examples of the prior art include a single stacking method and a back to back stacking method.

The single stacking method has the advantage of forming a PSG (Phosphorous silicate glass) film on the surface that is not used as N layer or P layer because the gap between wafers is secured. There is a problem that the throughput is not limited because the wafer amount is limited.

On the other hand, in the case of the back to back stacking method, since two wafers are attached to each other, the amount of wafers that can be loaded on the quartz boat may increase as compared to the single stacking method. Since the PSG (Phosphorous silicate glass) film is hardly formed because they are attached to each other, there is a problem in that the efficiency of a cell is reduced in connection with the manufacture of semiconductor devices, particularly solar cells.

Therefore, in the diffusion process of a semiconductor device including a solar cell, i) to improve the problem of the single loading method can be carried out by loading more wafers, ii) to solve the problem of the back to back loading method In order to improve, there is a demand for a diffusion process apparatus and a diffusion method using a wafer stacking method that enables formation of a phosphorous silicate glass (PSG) film even on a surface which is not used as an N layer or a P layer.

In the present invention, in a method of loading a wafer on a quartz boat used in a wafer diffusion process, a bi-pitch method or a narrow-pitch method is applied to load more wafers, thereby increasing the yield. An object of the present invention is to provide an increasing quartz boat, a semiconductor wafer diffusion processing apparatus including the quartz boat, and a diffusion process.

In addition, the present invention is a semiconductor boat including a quartz boat, the quartz boat to ensure the efficiency of the wafer to ensure that the PSG (Phosphorous silicate glass) film can be formed on both sides of the wafer even if the diffusion process by loading more wafers than the prior art It is another object to provide a wafer diffusion process apparatus and a diffusion process.

The technical objects to be achieved by the present invention are not limited to the above-mentioned technical problems, and other technical subjects which are not mentioned can be clearly understood by those skilled in the art from the description of the present invention .

In order to solve the above problems of the prior art, the present invention includes an upper slot, a lower slot, and a support for loading a wafer, and a coupling portion into which a wafer formed in the upper slot and the lower slot is inserted is a plurality of A quartz boat, which is used in a semiconductor diffusion process, includes a protrusion, wherein the first protrusion, which is an odd protrusion, and the second protrusion, which is an even protrusion, have different widths. do.

In addition, the present invention includes an upper slot (slot), a lower slot and a support for loading a wafer, the coupling portion is inserted into the wafer formed in the upper slot and the lower slot includes a plurality of protrusions, the protrusions Provided is a quartz boat used in a semiconductor diffusion process, wherein the pitch between wafers is formed to be 2.5 mm to 3.5 mm.

The present invention includes an upper slot (slot), a lower slot and a support for loading a wafer, the coupling portion into which the wafer formed in the upper slot and the lower slot is inserted comprises a plurality of protrusions, odd number of the protrusions A boat loading comprising a quartz boat and a paddle for transferring the quartz boat to the diffusion path, characterized in that the first protrusion as the protrusion and the second protrusion as the even protrusion have different widths. Boat Loading) section; A vertical furnace unit including a diffusion tube into which the quartz boat loaded with the wafer is inserted, a gas injection hole, and a heater for heat treatment of the wafer; And a gas cabinet unit configured to receive the gas discharged from the vertical diffusion path and discharge the gas to the outside.

In addition, the present invention includes an upper slot (slot), a lower slot and a support for loading a wafer, the coupling portion is inserted into the wafer formed in the upper slot and the lower slot includes a plurality of protrusions, the protrusions Boat loading including a quartz boat and a paddle for transferring the quartz boat to a diffusion path, wherein the pitch between the wafers is 2.5 mm to 3.5 mm. part; A vertical furnace unit including a diffusion tube into which the quartz boat loaded with the wafer is inserted, a gas injection hole, and a heater for heat treatment of the wafer; And a gas cabinet unit configured to receive the gas discharged from the vertical diffusion path and discharge the gas to the outside. It provides a semiconductor wafer diffusion processing apparatus comprising a.

In the present invention, the width of the first protrusion has a lower width of 1.0 to 2.0 mm, the width of the second protrusion comprises a semiconductor wafer diffusion process apparatus, characterized in that the width of 2.0 to 3.0mm.

In the present invention, the protrusion includes a semiconductor wafer diffusion processing apparatus, characterized in that formed inclined at an inclination of 3 ° to 5 ° in the vertical direction with respect to the support of the quartz boat (Quatz Boat).

In the present invention, the wafer loaded on the quartz boat includes a semiconductor wafer diffusion processing apparatus, characterized in that the p-type silicon wafer.

The present invention provides a method comprising: a step of loading a plurality of wafers into respective coupling portions formed by first and second protrusions having different widths of upper and lower slots of a quartz boat; Inserting a quartz boat loaded with the wafer into a vertical furnace; Closing the door of the vertical diffusion path to seal the vertical diffusion path; And injecting gas into the vertical diffusion path and performing heat treatment.

According to the present invention, a plurality of wafers are provided at respective coupling portions formed by protrusions of upper slots and lower slots of quartz boats formed such that a pitch between wafers loaded on a quartz boat is 2.5 mm to 3.5 mm. A step loading; Inserting a quartz boat loaded with the wafer into a vertical furnace; C) closing the door of the vertical diffusion path to close the vertical diffusion path; And d injecting gas into the vertical diffusion furnace and performing heat treatment. It includes the diffusion process of the semiconductor wafer containing.

In the present invention, the step A includes a diffusion process of the semiconductor wafer, characterized in that each wafer is loaded in a bi-pitch method in the upper slot and the lower slot of the quartz boat (Quatz Boat).

In the present invention, step A or step a, the wafer is inclined at an inclination of 3 ° to 5 ° in the vertical direction with respect to the support of the quartz boat (Quatz Boat) characterized in that for loading on the coupling portion formed by the protrusion It includes a diffusion process of the semiconductor wafer.

In the present invention, the wafer loaded on the quartz boat includes a semiconductor wafer diffusion process, wherein the wafer is a p-type silicon wafer.

In the present invention, the gas includes a diffusion process of a semiconductor wafer, characterized in that the phosphoryl chloride (POCl ₃ ).

In the present invention, the heat treatment includes a diffusion process of a semiconductor wafer, characterized in that the heat treatment of the wafer at a temperature of 800 ℃ to 900 ℃.

According to the present invention, a semiconductor wafer diffusion processing apparatus and a diffusion process for increasing the yield of a processed wafer by loading a wafer by applying a bi-pitch or narrow-pitch method to a quartz boat are provided. It is effective to provide.

In addition, according to the present invention, even if the diffusion process by loading more wafers than the prior art, the quartz boat to ensure the efficiency of the wafer to ensure that the PSG (Phosphorous silicate glass) film can be formed on both sides of the wafer, including the quartz boat It is effective to provide a semiconductor wafer diffusion process apparatus and a diffusion process.

In particular, in the manufacturing process of a solar cell, the gap between wafers is narrowed by applying a bi-pitch method or a narrow-pitch method, without degrading the efficiency of the solar cell. Production of solar cells can be increased by increasing the amount of wafers loaded, and the thickness and surface concentration of the n- or p-layers are reduced by increasing the diffusion speed between wafers, so that high resistance can be easily obtained.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Prior to this, terms or words used in the specification and claims should not be construed as having a conventional or dictionary meaning, and the inventors should properly explain the concept of terms in order to best explain their own invention. Based on the principle that can be defined, it should be interpreted as meaning and concept corresponding to the technical idea of the present invention. Therefore, the embodiments described in the specification and the drawings shown in the drawings are only one of the most preferred embodiments of the present invention and do not represent all of the technical idea of the present invention, various modifications that can be replaced at the time of the present application It should be understood that there may be equivalents and variations.

In the semiconductor manufacturing process, an impurity diffusion process protects the surface of the wafer like a mask, and at the same time, an oxide film (SiO ₂ ) is formed on the surface of the wafer where the oxide film is partially grown or not grown at all for the subsequent etching process. The diffusion process is performed.

This process is carried out in a diffusion tube of a diffusion furnace controlled at a predetermined temperature, which is generally performed for 30 minutes to several hours, and in the quartz tube of the diffusion furnace, oxygen and nitrogen gas or steam or bovine and oxygen An oxidant such as a gas, that is, a reaction gas is injected to oxidize silicon to form an oxide film on the crystal wafer.

The wafer boat may have various shapes such as vertical and horizontal types. The wafer boat is inserted into a process tube or a diffusion tube in a state in which a plurality of wafers are loaded, and serves to fix and support the wafer for deposition on the wafers loaded on the wafer boat. In the present invention, the material of the wafer boat may be made of quartz, which is resistant to high heat and has little chemical change.

1 is an exemplary view showing a single stacking method of a wafer according to the prior art, Figure 2 is an exemplary view showing a back to back loading method of a wafer according to the prior art.

Referring to FIG. 1, in a diffusion process device, particularly a diffusion process device used in the solar cell manufacturing field, a single stacking method of a wafer is inserted into an upper slot 110 and a lower slot 120 of a quartz boat. Since the pitch between the wafers is 4mm to 5mm, the amount of wafers that can be loaded on one quartz boat is limited, resulting in extremely low yield.

Therefore, referring to FIG. 2, back-to-back stacking is shown to improve the low productivity of the single stacking method, which stacks two wafers facing each other to double the wafer size of the single stacking stack. There is an advantage to load more.

However, if back-to-back loading is used, the production can be doubled, but the opposite side of the surface 230 used as the n-layer is attached so that the ion injection gas cannot enter, so that oxide (PSG, Phosphorous silicate glass The film is hardly formed, and therefore, a problem occurs that the efficiency of the semiconductor, in particular, the efficiency of the solar cell, is lowered due to the decrease in the gettering effect due to the oxide formation. Therefore, even if there is a problem of productivity due to such a problem, the reality is that the back to back stacking method is hardly used in the solar cell field that emphasizes efficiency.

Figure 3 is an exemplary view showing the configuration of the boat loading unit and the vertical diffusion path according to an embodiment of the present invention, Figure 4 is a view showing the transfer of the quartz boat (Quatz Boat) in the diffusion tube according to an embodiment of the present invention It is an exemplary figure which shows.

The semiconductor diffusion process is a process of forming an oxide film on the wafer. The oxide film is used for planarization and ion masking during ion implantation, and prevents impurities from penetrating into the film quality during reflow after the PSG or BPSG process. It is used as Inter Layer.

In the present invention, the oxide film forming process is performed by inserting a plurality of wafers 350 into the diffusion tubes 380 and 460 of the diffusion equipment and injecting ion gas, and the plurality of wafers 350 are loaded into quartz boats 330 and 410 made of quartz. The process is performed in a state, and the quartz boats 330 and 410 are loaded and unloaded into the diffusion tube.

In addition, the present invention is a process for making a pn junction in a semiconductor wafer diffusion process, especially solar cell manufacturing process emitter by diffusing the n-type element (P) at a high temperature on the p-type silicon wafer (350) It can be a furnace equipment that creates an emitter. Of course, not only the p-type silicon wafer diffusion process but also the n-type silicon wafer diffusion process can be used.

The present invention provides a boat loading unit including a quartz boat (330, 410) having an upper slot, a lower slot, and a support for loading a wafer (350), and a paddle (340, 430) for transferring the quartz boat (330, 410) to a diffusion path. , A vertical diffusion path part including a diffusion tube 380 and 460 into which the quartz boats 330 and 410 on which the wafer is loaded are inserted, a gas injection hole and a heater for heat treatment of the wafer, and a gas discharged from the vertical diffusion path. The gas cabinet part which discharges to the exterior can be provided.

After loading the wafer 350, especially the solar cell wafer, in a vertical form on a quartz boat 330, 410, the quartz boat 330, 410 is loaded on a paddle 340, 430 and moved to the diffusion tube 380. Let's do it. That is, the horizontal furnace diffusion apparatus of the present invention is provided with diffusion tubes 380 and 460 for performing a process, and an injection hole into which a process gas is injected is formed at one side of the process tube, and in the diffusion tubes 380 and 460. The quartz boats 330 and 410 on which the semiconductor wafer is loaded are inserted.

In particular, in order to form an N layer on a P-type silicon wafer, phosphoryl chloride (POCl ₃ ) gas is injected into the diffusion tube 380, and n-layer emitters are preferably formed through a diffusion treatment at a high temperature of 800 ° C. to 900 ° C. ) Can be formed.

When the wafer 350 is loaded on the quartz boat 330, the wafer 350 is positioned while maintaining a constant gap between the wafers 350, and the wafer 350 may be loaded at an angle of 3 ° to 5 °. This will be described later.

Figure 5 is an exemplary view showing the configuration of the vertical diffusion path and the gas cabinet according to an embodiment of the present invention.

In the present invention, the vertical diffusion path unit may include a diffusion tube into which a quartz boat loaded with a wafer is inserted, a gas injection hole, and a heater 520 for heat treatment of the wafer.

In addition, a liner having a protective film function may be installed between the heater 520 and the diffusion tube to block and absorb various impurities (Fc, Mg, Na, etc.) generated from the heater's heat. Can be.

On the other hand, since the inside of the diffusion tube must be maintained at a temperature required for the process, it is possible to detect the temperature by installing a temperature sensor, and the data detected by the temperature sensor is output to a controller (not shown) so that the controller controls the heater 520. Can be controlled to maintain the desired temperature.

In the present invention, the gas cabinet (Gas cabinet) may serve to discharge the gas discharged from the vertical diffusion path to discharge it to the outside.

6 is a block diagram of a quartz boat according to an embodiment of the present invention.

In the present invention, the quartz boat may include an upper slot 610, a lower slot 620, and a support 630 for loading the wafer 640.

The coupling portion into which the wafers formed in the upper slot 610 and the lower slot 620 of the quartz boat are inserted may include a plurality of protrusions, and the odd number (n = 1, 3, 5, ... .) The first protrusion, which is a protrusion, and the second protrusion, which is an even number (n = 2,4,6, ...) protrusion, may be formed to have different widths. By alternately forming protrusions having different widths, a bi-pitch loading method of a wafer to be described later can be applied.

Alternatively, in order to apply the narrow-pitch loading method, the coupling portion into which the wafer formed in the upper slot 610 and the lower slot 620 of the quartz boat is inserted may include a plurality of protrusions. The protrusion may be formed such that a pitch between wafers is 2.5 mm to 3.5 mm. When the narrow-pitch stacking method is applied, the pitch between wafers is formed to be 2.5 mm to 3.5 mm, so that a PSG film is formed on the opposite surface that is not used as an N layer, thereby improving semiconductor efficiency.

Boat loading portion of the present invention may be formed by including a paddle (Paddle) for transferring the quartz boat to the diffusion furnace in addition to the quartz boat.

7 is an enlarged view of an upper slot and a lower slot of a quartz boat according to an embodiment of the present invention.

The upper slot 710 and the lower slot 720 included in the quartz boat of the present invention may form a plurality of protrusions at the portion 730 into which the wafer is inserted, and the protrusions may be 3 ° in the vertical direction with respect to the support. Can be formed by tilting to ~ 5˚.

Of course, the present invention can also be formed by adjusting the inclination of the protrusion so that the wafer does not fall off the inclination of 3 ° ~ 5 ° as necessary.

8A is an exemplary view showing a bi-pitch loading method of a wafer according to an embodiment of the present invention, and FIG. 8B is a narrow-pitch loading method of a wafer according to an embodiment of the present invention. It is an exemplary diagram showing.

BACKGROUND OF THE INVENTION Horizontal type diffusion equipment used in semiconductor devices, especially solar cell manufacturing, has the lowest productivity in terms of throughput of the entire line. Because the length of the heating field of the furnace (furnace) is fixed, there is a limit to increase the length of the quartz boat (quartz boat) to load a lot of wafers, it is difficult to increase the yield. In other words, increasing the length of the quartz boat in order to ensure the efficiency of the solar cell is limited in consideration of the equipment installation cost due to the large size of the equipment.

In addition, in order to secure a high efficiency solar cell, many attempts have been made to bring the sheet resistance of the n-layer formed by the diffusion process to high resistance. When using a conventional quartz boat, various process conditions are used. There is a difficulty to fluctuate.

Diffusion equipment has the problem of increasing the output with the neck equipment in terms of the throughput of the entire line, and the recent trend is to achieve a high efficiency of the n-layer formed by the diffusion process to achieve high efficiency solar cell There is a demand to produce it. Therefore, in the present invention, in order to improve the above problems, a method for narrowing a constant pitch between 4 and 5 mm between wafers used in the related art was examined.

Therefore, in the present invention, by adopting a bi-pitch loading method or a narrow-pitch loading method, the wafer gap can be increased by narrowing the gap between wafers, and at the same time, a high resistance value for the n-layer. Suggested to have. That is, it can be said to improve the efficiency of the solar cell while increasing the efficiency of the single stacking method or back to back loading method.

By using the bi-pitch or narrow-pitch loading method, the pitch between wafers can be narrowed to increase the number of wafers that can be loaded on the quartz boat. When the wafer gap becomes narrow (2.5 ~ 3.5mm), the flow of ion implanted gas injected into the diffusion tube passes at a high flow rate between wafers compared to the conventional gap (4 ~ 5mm), so that the speed of diffusion It can be said that the method can easily obtain high resistance by reducing the n-layer thickness and surface concentration.

That is, according to the back to back stacking method, since one side of the wafer is attached to one side of the other wafer, a problem of deterioration of the cell efficiency caused by poor formation of the PSG film occurs. Application can solve this problem.

That is, in the case of the bi-pitch method, by applying different pitches in consideration of the standard pitch of 4 to 5 mm, the PSG film can be formed by allowing the opposite side to secure a little space to allow the ion implantation gas to enter. In addition, even in the narrow pitch method, since the pitch pitch between wafers can form a uniform pitch of 2.5mm-3.5mm, even if the surface is not used as an n-layer, space can be secured and PSG film can be formed. The amount of wafer loaded may increase.

9A to 9B are detailed exemplary views illustrating a bi-pitch loading method of a wafer according to an embodiment of the present invention.

In order to implement such a bi-beach loading method, the present invention, the coupling portion is inserted into the wafer 930 formed in the upper slot and the lower slot of the quartz boat (Quatz Boat) includes a plurality of protrusions, of the protrusions The first and second protrusions 910 and odd-numbered protrusions 920 are formed to have different widths.

The width of the first protrusion 910 may have a lower width of 1.0 to 2.0 mm, and the width of the second protrusion 920 may have a lower width of 2.0 to 3.0 mm. The first protrusion 910 and the second protrusion 920 may be inclined at an inclination of 3 ° to 5 ° in the vertical direction with respect to the support of the quartz boat.

When the first protrusion 910 and the second protrusion 920 are formed as described above, and the wafer is loaded in a bi-pitch manner, the pitch between the first wafer and the second wafer may be 2.5-3.5 mm, The pitch between the second wafer and the third wafer is 1.0-2.0 mm, allowing the stack to have different pitches.

9C to 9D are detailed exemplary views illustrating a narrow-pitch loading method of a wafer according to an embodiment of the present invention.

In order to implement such a narrow pitch loading method, the present invention includes a plurality of protrusions 960 in which a coupling portion into which a wafer 930 formed in an upper slot and a lower slot of a quartz boat is inserted. The protrusion 960 may be formed such that a pitch between wafers is 2.5 mm to 3.5 mm. That is, in the bi-pitch method, the protrusions are formed to have different pitches between wafers, but the narrow pitch may be formed so that the protrusions are formed so that the pitch between wafers is uniform.

In addition, even when the narrow pitch loading method is applied, the protrusion 960 may be inclined at an inclination of 3 ° to 5 ° in the vertical direction based on the support of the quartz boat.

By applying the narrow pitch method as described above, since the inter-wafer spacing, that is, pitches 940 and 950 are formed to be uniformly 2.5 mm to 3.5 mm, a PSG film can be formed even on a surface not used as an N layer or a P layer. Thus, semiconductor efficiency, in particular solar cell efficiency, can be ensured.

10 is a flowchart of a semiconductor wafer diffusion process according to an embodiment of the present invention.

First, a step (s11) of loading a plurality of wafers into the quartz boat of the boat loading part is performed. At this time, the quartz boat, the upper slot and the lower slot may form a protrusion for inserting the wafer.

i) The protrusion may be formed of a first protrusion and a second protrusion having different lower widths. When the wafer is loaded using the first and second protrusions having different lower widths, the bi-pitch (Bi−) may be used. It is loaded by the pitch method.

ii) On the other hand, it is also possible to form the protrusion to have a uniform lower width. In this case, the pitch between wafers is formed to be 2.5mm-3.5mm so that the wafer is loaded in a narrow-pitch method. do.

The protrusion may be formed at an inclination of 3 degrees to 5 degrees with respect to a support of a quartz boat, in which case the wafer is inclined at an inclination of 3 degrees to 5 degrees.

After the wafer loading step s11, the quartz boat loaded with the wafer is inserted into a vertical furnace. (S22) By bi pitch or narrow pitch. The wafer loaded quartz boat is transferred to the diffusion tube through the door using a paddle.

Thereafter, the door of the vertical diffusion path is closed to close the vertical diffusion path (s13), and the gas diffusion and heat treatment step (s14) of the vertical diffusion path finishes the diffusion process according to the present invention. Will be.

In the present invention, a p-type silicon wafer may be used to dope n-type impurities. In this case, the gas injected into the gas inlet of the diffusion tube may be phosphoryl chloride (POCl ₃ ). In addition, the heat treatment temperature of the diffusion step (s14) may be a temperature of 800 ℃ to 900 ℃.

When the bi-pitch method or the narrow-pitch method is adopted in the diffusion process as described above, in the manufacturing process of the solar cell, the gap between the wafers is narrowed, It is possible to increase the production of solar cells by increasing the wafer load without degrading the efficiency of the battery cells, and by increasing the diffusion speed between wafers, the thickness and surface concentration of the n-layer or p-layer can be reduced to easily obtain high resistance. It works.

That is, it can be said that the problem of the conventional back-to-back stacking method can be improved and the yield can be increased without degrading the efficiency of the solar cell.

The present invention has been described above in connection with specific embodiments of the present invention, but this is only an example and the present invention is not limited thereto. Those skilled in the art to which the present invention pertains can change or modify the described embodiments without departing from the scope of the present invention, and within the equivalent scope of the technical spirit of the present invention and the claims to be described below. Various modifications and variations are possible.

1 is an exemplary view showing a single stacking method of a wafer according to the prior art.

Figure 2 is an exemplary view showing a back to back stacking method of the wafer according to the prior art.

Figure 3 is an exemplary view showing the configuration of the boat loading portion and the vertical diffusion path portion in accordance with an embodiment of the present invention.

Figure 4 is an exemplary view showing a state in which a quartz boat (Quatz Boat) in accordance with an embodiment of the present invention is transferred into the diffusion tube.

Figure 5 is an exemplary view showing the configuration of the vertical diffusion path and the gas cabinet portion according to an embodiment of the present invention.

Figure 6 is a block diagram of a quartz boat (Quatz Boat) according to an embodiment of the present invention.

7 is an enlarged view of an upper slot and a lower slot of a quartz boat according to an embodiment of the present invention.

8A is an exemplary view illustrating a bi-pitch loading method of a wafer according to an embodiment of the present invention.

8B is an exemplary view showing a narrow-pitch loading method of a wafer according to an embodiment of the present invention.

9A to 9B are detailed views illustrating a bi-pitch loading method of a wafer according to an embodiment of the present invention.

9C to 9D are detailed exemplary views showing a narrow-pitch loading method of a wafer according to an embodiment of the present invention.

10 is a flow chart of a semiconductor wafer diffusion process in accordance with an embodiment of the present invention.

{Description of major symbols in the drawing}

110, 210, 610, 710, 810: upper slot 510: gas cabinet

120, 220, 620, 720, 820: Lower slot 520: Heater

130, 230, 830: surface used for N layer 530: insulator

310: boat loading unit 630: support

320, 550: vertical diffusion path 730: bonding portion of the wafer

330 and 410 quartz boat 910 first protrusion

340 and 430: paddle 920: second protrusion

350, 640, 930: Wafers 940, 950: Pitch

360, 540: door

370, 450: door opening and closing device

380, 460: diffusion tube

Claims (14)

Having an upper slot, a lower slot, and a support for loading a wafer, The coupling portion into which the wafers formed in the upper slot and the lower slot are inserted includes a plurality of protrusions, and the first and second protrusions of odd and second protrusions have different widths. A quartz boat used in a semiconductor diffusion process. Having an upper slot, a lower slot, and a support for loading a wafer, In the semiconductor diffusion process, the coupling portion into which the wafers formed in the upper slot and the lower slot are inserted includes a plurality of protrusions, and the protrusions are formed such that a pitch between the wafers is 2.5 mm to 3.5 mm. Quartz boat used. A coupling portion having an upper slot, a lower slot, and a support for loading a wafer, into which a wafer formed in the upper slot and the lower slot is inserted comprises a plurality of protrusions, the first protrusion being an odd number of protrusions; Boat loading including a quartz boat and a paddle for transferring the quartz boat to a diffusion path, characterized in that the first projection and the second projection, which are even-numbered projections, have different widths. part; A vertical furnace unit including a diffusion tube into which the quartz boat loaded with the wafer is inserted, a gas injection hole, and a heater for heat treatment of the wafer; And A gas cabinet unit configured to receive the gas discharged from the vertical diffusion path and discharge the gas to the outside; Semiconductor wafer diffusion processing apparatus comprising a. An upper slot, a lower slot, and a support for loading a wafer, the coupling portion into which the wafer formed in the upper slot and the lower slot is inserted includes a plurality of protrusions, and the protrusions include a pitch between wafers. A boat loading unit including a quartz boat and a paddle for transferring the quartz boat to a diffusion path; A vertical furnace unit including a diffusion tube into which the quartz boat loaded with the wafer is inserted, a gas injection hole, and a heater for heat treatment of the wafer; And A gas cabinet unit configured to receive the gas discharged from the vertical diffusion path and discharge the gas to the outside; Semiconductor wafer diffusion processing apparatus comprising a. The method according to claim 1 or 3, The width of the first protrusions has a lower width of 1.0 to 2.0 mm, the width of the second protrusions has a lower width of 2.0 to 3.0 mm. 5. The method according to any one of claims 1 to 4, The protrusion is a semiconductor wafer diffusion process apparatus, characterized in that formed inclined at a slope of 3 ° to 5 ° in the vertical direction with respect to the support of the quartz boat (Quatz Boat). 5. The method according to any one of claims 1 to 4, And a wafer loaded on the quartz boat is a p-type silicon wafer. A step of loading a plurality of wafers in each coupling portion formed of the first projection and the second projection having a different width of the upper slot and the lower slot of the quartz boat (Quatz Boat); Inserting a quartz boat loaded with the wafer into a vertical furnace; Closing the door of the vertical diffusion path to seal the vertical diffusion path; And Injecting gas into the vertical diffusion furnace and performing heat treatment; Diffusion process of a semiconductor wafer comprising a. A that loads a plurality of wafers into respective coupling portions formed by protrusions of an upper slot and a lower slot of a quartz boat formed such that a pitch between wafers loaded on a quartz boat is 2.5 mm to 3.5 mm step; Inserting a quartz boat loaded with the wafer into a vertical furnace; C) closing the door of the vertical diffusion path to close the vertical diffusion path; And Injecting gas into the vertical diffusion path and performing heat treatment; Diffusion process of a semiconductor wafer comprising a. The method of claim 8, wherein the step A, The process of diffusing a semiconductor wafer, characterized in that each wafer is loaded in a bi-pitch method in the upper slot and the lower slot of the quartz boat (Quatz Boat). The method of claim 8 or 9, wherein the step A or a, The wafer is inclined at an inclination of 3 ° to 5 ° in the vertical direction with respect to the support of the quartz boat (Quatz Boat) diffusion process of the semiconductor wafer characterized in that it is mounted on the coupling portion formed by the projection. The method according to claim 8 or 9, The wafer loaded on the quartz boat is a semiconductor wafer diffusion process, characterized in that the p-type silicon wafer. The method according to claim 8 or 9, The gas is a phosphoryl chloride (POCl ₃ ) diffusion process of the semiconductor wafer. The method of claim 8 or 9, wherein the heat treatment, A diffusion process of a semiconductor wafer, characterized in that the wafer is heat-treated at a temperature of 800 ℃ to 900 ℃.

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