CN108560059A - Modified form solar battery sheet diffusion furnace - Google Patents
Modified form solar battery sheet diffusion furnace Download PDFInfo
- Publication number
- CN108560059A CN108560059A CN201810770309.7A CN201810770309A CN108560059A CN 108560059 A CN108560059 A CN 108560059A CN 201810770309 A CN201810770309 A CN 201810770309A CN 108560059 A CN108560059 A CN 108560059A
- Authority
- CN
- China
- Prior art keywords
- silicon chip
- boiler tube
- source bottle
- diffusion furnace
- modified form
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009792 diffusion process Methods 0.000 title claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 46
- 239000010703 silicon Substances 0.000 claims abstract description 46
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 13
- 239000010453 quartz Substances 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 239000007789 gas Substances 0.000 abstract description 9
- 238000005516 engineering process Methods 0.000 abstract description 4
- 230000000740 bleeding effect Effects 0.000 abstract description 2
- 210000002421 cell wall Anatomy 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 210000004027 cell Anatomy 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- 206010027146 Melanoderma Diseases 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/10—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to solar cell field of diffusion technologies, more particularly to a kind of modified form solar battery sheet diffusion furnace, after silicon chip slot is obliquely installed, silicon chip can be inclined in boiler tube, the air inlet of stove tail end is placed on the top of stove tail end, bleeding point is still placed on the lower part of stove, silicon chip is tilted along airflow direction, optimize gas field atmosphere in diffusion furnace tube, improve the contact for taking source nitrogen and silicon chip intermediate region, the difference for reducing sheet resistance and edge sheet resistance among silicon chip, improves uniformity in the piece of diffused sheet resistance.
Description
Technical field
The present invention relates to solar cell field of diffusion technologies more particularly to a kind of modified form solar battery sheet to spread
Stove.
Background technology
Diffusion makes the core that P-N junction is crystal silicon solar batteries, is the key that one of battery quality quality.For diffusion
For process, it is ensured that the greatest problem that the high production capacity of high-efficiency battery faces is how to ensure the uniformity of diffusion.Diffusion is more equal
The controllability of the good battery of even property, follow-up technological parameter is high, can preferably ensure the stability of battery performance and parameter.
The gas field in diffusion furnace tube is mainly slice, thin piece surface vertically with gas flow direction (as shown in Figure 1) at present, takes source
The contact of nitrogen and silicon chip edge is far longer than among silicon chip, this so that sheet resistance is higher than edge sheet resistance among slice, thin piece, this makes piece
The uniformity of sub- sheet resistance is deteriorated.When intermediate sheet resistance is excessively high, follow-up sintering process can be caused to burn impermeable, cause EL blackspots abnormal.
Invention content
The technical problem to be solved by the present invention is to：When being contacted to solve to take source nitrogen and silicon chip surface in the prior art,
The contact for taking source nitrogen and silicon chip edge is far longer than technical problem among silicon chip, and the present invention provides a kind of modified form solar energy
Cell piece diffusion furnace.
The technical solution adopted by the present invention to solve the technical problems is：A kind of modified form solar battery sheet diffusion furnace,
It is arranged in boiler tube, is set at the fire door of boiler tube including boiler tube, quartz boat, source bottle, source bottle air inlet pipe and source bottle escape pipe, quartz boat
It is equipped with bell, one end of source bottle escape pipe and source bottle is internal is connected, the other end of source bottle escape pipe is from the top of boiler tube tail end
It is passed through inside boiler tube, one end of source bottle air inlet pipe is connected with source bottle inside, and the other end of source bottle air inlet pipe is passed through nitrogen, boiler tube
Interior bottom is provided with horizontal escape pipe, and escape pipe is pierced by from the lower part of boiler tube tail end, is offered on the quartz boat multiple
Uniform silicon chip slot, the silicon chip slot are obliquely installed, the notch of silicon chip slot relative to silicon chip slot bottom closer to boiler tube tail end.
Further, the cell wall of the silicon chip slot and the angle of quartz boat bottom surface are α, α ranging from 85 ° of 90 ° of ＜ α ＜.Incline
The too easy greatly gas for miss at the top of silicon chip in angle is more, influences diffusion effect, and occupancy boiler tube volume is larger, inclination angle is too
The small gas that is unfavorable for is to silicon chip center movement.
Preferably, the cell wall of the silicon chip slot and the angle α of quartz boat bottom surface are 87 °.
The invention has the advantages that the modified form solar battery sheet diffusion furnace of the present invention, silicon chip slot is obliquely installed
Afterwards, silicon chip can be inclined in boiler tube, and the air inlet of stove tail end is placed on the top of stove tail end, and bleeding point is still placed on stove
Lower part, silicon chip are tilted along airflow direction, optimize gas field atmosphere in diffusion furnace tube, are improved and are taken source nitrogen and silicon chip intermediate region
Contact reduces the difference of sheet resistance and edge sheet resistance among silicon chip, improves uniformity in the piece of diffused sheet resistance.
Description of the drawings
Present invention will be further explained below with reference to the attached drawings and examples.
Fig. 1 is the structural schematic diagram of the TongYuan of diffusion in the prior art device.
Fig. 2 is the structural schematic diagram of optimum embodiment of the present invention..
In figure：1, boiler tube, 11, bell, 12, escape pipe, 2, quartz boat, 21, silicon chip slot, 3, source bottle, 31, source bottle air inlet
Pipe, 311, source bottle intake valve, 32, source bottle escape pipe, 321, source bottle air outlet valve, 4, silicon chip.
Specific implementation mode
In conjunction with the accompanying drawings, the present invention is further explained in detail.These attached drawings are simplified schematic diagram, only with
Illustration illustrates the basic structure of the present invention, therefore it only shows the composition relevant to the invention.
As shown in Fig. 2, be optimum embodiment of the present invention, a kind of modified form solar battery sheet diffusion furnace, including boiler tube 1,
Quartz boat 2, source bottle 3, source bottle air inlet pipe 31 and source bottle escape pipe 32, quartz boat 2 are arranged in boiler tube 1, are set at the fire door of boiler tube 1
It is equipped with bell 11, is connected inside one end of source bottle escape pipe 32 and source bottle 3, the other end of source bottle escape pipe 32 is from 1 tail of boiler tube
The top at end is passed through inside boiler tube 1, source bottle air inlet pipe 31 one end and source bottle 3 inside be connected, source bottle air inlet pipe 31 it is another
End is passed through nitrogen, and the bottom in boiler tube 1 is provided with horizontal escape pipe 12, and the outlet of escape pipe 12 is from the lower part of 1 tail end of boiler tube
It is pierced by, the import of escape pipe 12, close to the fire door of boiler tube 1, multiple uniform silicon chip slots 21, silicon chip slot is offered on quartz boat 2
21 are obliquely installed, the notch of silicon chip slot 21 relative to silicon chip slot 21 bottom closer to 1 tail end of boiler tube, the i.e. notch of silicon chip slot 21
It is tilted to nitrogen inlet.The angle of 2 bottom surface of cell wall and quartz boat of silicon chip slot 21 is α, α ranging from 85 ° of 90 ° of ＜ α ＜.Silicon chip
The angle α of 2 bottom surface of cell wall and quartz boat of slot 21 is 87 °.
Operating mode is：
When technique proceeds to diffusion step, the external high pure nitrogen of PLC controls passes through source bottle intake valve 311 by source bottle air inlet pipe 31
Into phosphorus oxychloride source bottle 3, and phosphorus oxychloride is carried out, by the source bottle air inlet of source bottle air outlet valve 321 and 1 upper rear of boiler tube
Pipe 31 enters in boiler tube 1, and under gas pressure, the source nitrogen of taking further is moved to the import of the escape pipe 12 at bell 11, is gone out
The outlet of tracheae 12 is connected with air extractor.Tilted-putted silicon chip 4 on quartz boat 2 will be passed through by taking source nitrogen in the process.
The upper end of silicon chip 4 is tilted to source bottle air inlet pipe 31, contributes to gas to 4 intermediary movements of silicon chip, the optimization of gas field atmosphere can improve
The contact of source nitrogen and 4 intermediate region of silicon chip is taken, the difference of silicon chip 4 intermediate sheet resistance and edge sheet resistance is reduced, improves diffused sheet resistance
Piece in uniformity.
Existing diffusion furnace and modified form solar battery sheet diffusion furnace experimental test result are as follows：
Test condition, with a collection of silicon chip, takes 2000 silicon chips to be divided into two groups with slice.It is cleaned in same cleaning machine.
Later group do and spread in existing diffusion furnace；One group is done in modified form solar battery sheet diffusion furnace and spreads.Every pipe takes 5
A warm area tests sheet resistance.Sheet resistance tester is moral instrument tester, the sheet resistance value of every 9 points of silicon test.
Experimental result:By following table as it can be seen that very poor value reduces in the piece of modified form solar battery sheet diffusion furnace of the present invention
16%-31%；Uniformity is also accordingly improved in piece.
It is enlightenment with above-mentioned desirable embodiment according to the present invention, through the above description, relevant staff is complete
Various changes and amendments can be carried out without departing from the scope of the technological thought of the present invention' entirely.The technology of this invention
Property range is not limited to the contents of the specification, it is necessary to determine its technical scope according to right.
Claims (3)
1. a kind of modified form solar battery sheet diffusion furnace, it is characterised in that：Including boiler tube (1), quartz boat (2), source bottle (3),
Source bottle air inlet pipe (31) and source bottle escape pipe (32), quartz boat (2) setting are provided in boiler tube (1) at the fire door of boiler tube (1)
Is connected inside bell (11), one end of source bottle escape pipe (32) and source bottle (3), the other end of source bottle escape pipe (32) is from boiler tube
(1) top of tail end is passed through boiler tube (1) inside, is connected inside one end of source bottle air inlet pipe (31) and source bottle (3), source bottle air inlet
The other end of pipe (31) is passed through nitrogen, and the bottom in boiler tube (1) is provided with horizontal escape pipe (12), and escape pipe (12) is from boiler tube
(1) lower part of tail end is pierced by, and multiple uniform silicon chip slots (21) are offered on the quartz boat (2), and the silicon chip slot (21) is inclined
Tiltedly setting, the notch of silicon chip slot (21) relative to silicon chip slot (21) bottom closer to boiler tube (1) tail end.
2. modified form solar battery sheet diffusion furnace as described in claim 1, it is characterised in that：The slot of the silicon chip slot (21)
Wall and the angle of quartz boat (2) bottom surface are α, α ranging from 85 ° of 90 ° of ＜ α ＜.
3. modified form solar battery sheet diffusion furnace as claimed in claim 2, it is characterised in that：The slot of the silicon chip slot (21)
Wall and the angle α of quartz boat (2) bottom surface are 87 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810770309.7A CN108560059A (en) | 2018-07-13 | 2018-07-13 | Modified form solar battery sheet diffusion furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810770309.7A CN108560059A (en) | 2018-07-13 | 2018-07-13 | Modified form solar battery sheet diffusion furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108560059A true CN108560059A (en) | 2018-09-21 |
Family
ID=63555406
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810770309.7A Pending CN108560059A (en) | 2018-07-13 | 2018-07-13 | Modified form solar battery sheet diffusion furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108560059A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010027744A (en) * | 2008-07-16 | 2010-02-04 | Shin-Etsu Chemical Co Ltd | Method for forming diffusion layer on substrate |
| CN201852445U (en) * | 2010-09-29 | 2011-06-01 | 常州天合光能有限公司 | Diffusion furnace capable of improving sheet resistance uniformity |
| KR20110064031A (en) * | 2009-12-07 | 2011-06-15 | 엘지전자 주식회사 | Device for semiconductor's diffusion step including quatz boat and its using method |
| CN103236410A (en) * | 2013-04-28 | 2013-08-07 | 康可电子（无锡）有限公司 | Railboat structure with chute |
| CN103904016A (en) * | 2014-04-04 | 2014-07-02 | 株洲南车时代电气股份有限公司 | Silicon wafer bearing device |
| CN203866406U (en) * | 2014-05-16 | 2014-10-08 | 中国东方电气集团有限公司 | Boron diffusion furnace baffle structure capable of achieving uniform diffusion of reaction gas |
| CN208562593U (en) * | 2018-07-13 | 2019-03-01 | 常州亿晶光电科技有限公司 | Modified form solar battery sheet diffusion furnace |
-
2018
- 2018-07-13 CN CN201810770309.7A patent/CN108560059A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010027744A (en) * | 2008-07-16 | 2010-02-04 | Shin-Etsu Chemical Co Ltd | Method for forming diffusion layer on substrate |
| KR20110064031A (en) * | 2009-12-07 | 2011-06-15 | 엘지전자 주식회사 | Device for semiconductor's diffusion step including quatz boat and its using method |
| CN201852445U (en) * | 2010-09-29 | 2011-06-01 | 常州天合光能有限公司 | Diffusion furnace capable of improving sheet resistance uniformity |
| CN103236410A (en) * | 2013-04-28 | 2013-08-07 | 康可电子（无锡）有限公司 | Railboat structure with chute |
| CN103904016A (en) * | 2014-04-04 | 2014-07-02 | 株洲南车时代电气股份有限公司 | Silicon wafer bearing device |
| CN203866406U (en) * | 2014-05-16 | 2014-10-08 | 中国东方电气集团有限公司 | Boron diffusion furnace baffle structure capable of achieving uniform diffusion of reaction gas |
| CN208562593U (en) * | 2018-07-13 | 2019-03-01 | 常州亿晶光电科技有限公司 | Modified form solar battery sheet diffusion furnace |
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