CN204356442U

CN204356442U - A kind of increase diffusion uniformity take out tail gas unit

Info

Publication number: CN204356442U
Application number: CN201420772787.9U
Authority: CN
Inventors: 李奕涛; 金重玄
Original assignee: Hangzhou Dahe Thermo Magnetics Co Ltd
Current assignee: Hangzhou Dahe Thermo Magnetics Co Ltd
Priority date: 2014-12-09
Filing date: 2014-12-09
Publication date: 2015-05-27
Anticipated expiration: 2024-12-09

Abstract

The utility model discloses a kind of increase diffusion uniformity take out tail gas unit, comprise circulating pipe and, vapor pipe, circulating pipe is provided with multiple aspirating hole for aspirating stove inner exhaust gas, vapor pipe communicates with the venting port of stove tail, the utility model sets up circulating pipe in the fire door position of furnace chamber body, and on circulating pipe, design multiple aspirating hole, original single-point type is bled and changes the air suction mode of multiple spot multi-angle into, greatly improve the flowing of stove internal diffusion gas, eliminate diffusion dead angle, make the diffusing, doping of silicon chip in stove evenly, improve Si wafer quality.

Description

A kind of increase diffusion uniformity take out tail gas unit

Technical field

The utility model relates to a kind of gas barrier, refer more particularly to a kind ofly increase diffusion uniformity, improve gas stream in the stove distribution take out tail gas unit.

Background technology

Current solar cell diffusing procedure mainly adopts tubular type to spread, during diffusion, nitrogen passes into Ping Jianglin source, phosphorus source and brings in diffuser tube, as shown in Figure 1, various gas comprises oxygen, nitrogen enters from inlet pipe and diffuses in boiler tube, finally from fire door tail gas mouth discharge, with the gas in phosphorus source through the silicon chip of high temperature, carry out a series of chemical transformation, finally form doped layer at silicon chip surface, as shown in Figure 2, conventional extraction pipe is that single port is bled, the flowing of gas in diffusion furnace is after flowing through silicon chip from stove afterbody, discharge from the tail gas mouth of fire door part, the homogeneity of gas flow is relatively poor, cause the part silicon chip sheet resistance homogeneity of fire door position poor, sheet resistance homogeneity particularly near several pieces of silicon chips of fire door is the poorest.

Utility model content

It is single port that the utility model mainly solves existing body of heater tail gas mouth, causes the technical problem that gas stream in the stove distribution silicon chip sheet resistance that is poor, that easily cause fire door place is poor; Provide a kind ofly increase diffusion uniformity, improve furnace gas distribution take out tail gas unit.

The technical problem of the above-mentioned existence of solution, the utility model mainly adopts following technical proposals:

Of the present utility model a kind of increase diffusion uniformity take out tail gas unit, be located in the furnace chamber body of diffusion furnace, for the exhaust emissions of silicon chip of solar cell diffusion furnace, the described vapor pipe taken out tail gas unit and comprise circulating pipe and communicate with circulating pipe, described circulating pipe is erected in fire door position, circulating pipe is provided with multiple aspirating hole for aspirating stove inner exhaust gas, described vapor pipe communicates with the venting port of stove tail, stove internal diffusion gas is discharged out of the furnace by venting port, circulating pipe is set up in the fire door position of furnace chamber body, and on circulating pipe, design multiple aspirating hole, original one-point type is bled and changes bleeding of multiple spot multi-angle into, greatly improve the homogeneity of stove internal diffusion gas flow, eliminate diffusion dead angle, make the diffusing, doping of silicon chip in stove evenly, improve Si wafer quality.

As preferably, described circulating pipe is circular, described circle diameter and described furnace chamber height match, multiple aspirating holes on circulating pipe be uniformly distributed in the same side of circulating pipe and perforate towards furnace chamber body, described vapor pipe is located at the bottom of circulating pipe and is communicated with circulating pipe, aspirating hole uniform on circulating pipe can form stratosphere gas flow, diffusion gas is made to flow uniformly through the surface of each silicon chip, circular circulating pipe can alleviate gas flow resistance in pipe, reduce air-flow pressure drop, eliminate dead space, make exhaust emissions more thorough.

As preferably, the diameter of described multiple aspirating hole tapers off shape from top to bottom, the diameter of circulating pipe top aspirating hole is greater than the diameter of circulating pipe bottom aspirating hole, the aspirating hole diameter successively decreased from top to bottom, ensure that the air pressure of each aspirating hole is close, the stream pressure in diffusion furnace be average, gas flow evenly.

As preferably, described circulating pipe material is glass.

The beneficial effects of the utility model are: set up circulating pipe in the fire door position of furnace chamber body, and on circulating pipe, design multiple aspirating hole, original one-point type is bled and changes bleeding of multiple spot multi-angle into, greatly improve the flowing of stove internal diffusion gas, eliminate diffusion dead angle, make the diffusing, doping of silicon chip in stove evenly, improve Si wafer quality.

Accompanying drawing explanation

Fig. 1 is the diffusion furnace air-flow schematic diagram of prior art.

Fig. 2 is the diffusion furnace single port extraction pipe schematic diagram in Fig. 1.

Fig. 3 is a kind of structural representation of the present utility model.

Fig. 4 is the schematic side view of Fig. 3 structure.

Fig. 5 is diffusion furnace air-flow schematic diagram of the present utility model.

1. diffusion furnaces in figure, 11. furnace chamber bodies, 12. fire doors, 13. stove tail, 2. air extractors, 21. circulating pipes, 211. aspirating holes, 22. vapor pipes.

Embodiment

Below by embodiment, and by reference to the accompanying drawings, the technical solution of the utility model is described in further detail.

Embodiment: what the present embodiment a kind of increased diffusion uniformity takes out tail gas unit, in the furnace chamber body being arranged on diffusion furnace 1 11, for the exhaust emissions of silicon chip of solar cell diffusion furnace, as shown in Figure 3 and Figure 4, take out the vapor pipe 22 that tail gas unit 2 comprises circulating pipe 21 and communicates with circulating pipe, circulating pipe is erect and is arranged on fire door 12 position, circulating pipe is circular, be made up of glass, circle diameter and furnace chamber height match, circulating pipe is designed with multiple aspirating hole 211 for aspirating stove inner exhaust gas, multiple aspirating hole be uniformly distributed in the same side of circulating pipe and perforate towards furnace chamber body, aspirating hole diameter tapers off shape from top to bottom, circulating pipe top aspirating hole diameter is greater than circulating pipe bottom aspirating hole diameter, Design of Exhaust Manifold is in the bottom of circulating pipe and communicate with circulating pipe, the other end of vapor pipe communicates with the venting port of stove tail 13, stove internal diffusion gas is discharged outside diffusion furnace by venting port.

During diffusion operation, nitrogen passes into be brought in diffusion furnace by phosphorus source in the bottle of phosphorus source, as shown in Figure 5, the various gases carrying phosphorus source enter in diffusion furnace from inlet mouth, because multiple on the circulating pipe of fire door position are uniformly distributed aspirating hole effect, diffusive gas flow is made to form stratosphere, flow uniformly through each silicon chip surface, through series of chemical, finally form doped layer at silicon chip surface, tail gas after diffusion enters each aspirating hole of circulating pipe, gather rear inflow vapor pipe, and discharged out of the furnace by the venting port of stove tail, whole diffusion process uniform stream, stable gas pressure, eliminate diffusion dead angle, silicon chip uniform doping is good, silicon chip sheet resistance consistence is high, improve silicon chip qualification rate and Si wafer quality.

In description of the present utility model, technical term " on ", D score, " front ", " afterwards ", " interior ", " outward " etc. represent that direction or position relationship are based on direction shown in the drawings or position relationship, be only for convenience of description with understand the technical solution of the utility model, more than illustrate and not restriction has been done to the utility model, the utility model is also not limited only to the citing of above-mentioned explanation, the change that those skilled in the art make in essential scope of the present utility model, remodeling, increase or replace, all should be considered as protection domain of the present utility model.

Claims

1. one kind can increase diffusion uniformity take out tail gas unit, be located in the furnace chamber body (11) of diffusion furnace (1), for the exhaust emissions of silicon chip of solar cell diffusion furnace, it is characterized in that: described in take out the vapor pipe (22) that tail gas unit (2) comprises circulating pipe (21) and communicate with circulating pipe, described circulating pipe is erected in fire door (12) position, circulating pipe is provided with multiple aspirating hole (211) for aspirating stove inner exhaust gas, described vapor pipe communicates with the venting port of stove tail (13), and stove internal diffusion gas is discharged out of the furnace by venting port.

2. according to claim 1 a kind of increase diffusion uniformity take out tail gas unit, it is characterized in that: described circulating pipe (21) is in circular, described circle diameter and described furnace chamber body (11) highly match, multiple aspirating holes (211) on circulating pipe be uniformly distributed in the same side of circulating pipe and perforate towards furnace chamber body, described vapor pipe (22) is located at the bottom of circulating pipe and communicates with circulating pipe.

3. according to claim 2 a kind of increase diffusion uniformity take out tail gas unit, it is characterized in that: the diameter of described multiple aspirating hole (211) tapers off shape from top to bottom, and the diameter of circulating pipe (21) top aspirating hole is greater than the diameter of circulating pipe bottom aspirating hole.

4. what a kind of according to claim 1 or 2 or 3 increased diffusion uniformity takes out tail gas unit, it is characterized in that: described circulating pipe (21) material is glass.