KR20110055935A - Liquid crystal display device and method of fabricating the same - Google Patents

Abstract

PURPOSE: A liquid crystal display device and manufacturing method thereof are provided to prevent the damage of static electricity in the upper plate of the electric field on a color filter substrate and to fundamentally prevent damage about a ground line. CONSTITUTION: A gate line is located in a display area of a first substrate that includes non-display area and a display area. A gate insulating layer(216) is located in a first substrate while covering the gate line. A data line(240) is located on a surface of the gate insulating layer. The gate line and a thin film transistor are connected to the data line in the pixel region. A transparent pixel electrode(230) having a sheet form is located on the surface of the gate line. A ground line is located on the surface of the gate insulating layer of a non-display area. A protective layer(250) having a contact hole covers the data line and the thin film transistor.

Description

Liquid crystal display device and method of fabricating the same

The present invention relates to a liquid crystal display device, and more particularly, to a liquid crystal display device and a method of manufacturing the same that can effectively prevent damage caused by static electricity.

Generally, the driving principle of a liquid crystal display device utilizes the optical anisotropy and polarization properties of a liquid crystal. Since the liquid crystal is thin and long in structure, the liquid crystal has directivity in the arrangement of molecules, and the direction of the molecular arrangement can be controlled by artificially applying an electric field to the liquid crystal.

Accordingly, if the molecular arrangement direction of the liquid crystal is arbitrarily adjusted, the molecular arrangement of the liquid crystal is changed, and light is refracted in the molecular arrangement direction of the liquid crystal due to optical anisotropy to express image information.

Currently, an active matrix liquid crystal display device (AM-LCD: abbreviated as an active matrix LCD, abbreviated as a liquid crystal display device) in which a thin film transistor and pixel electrodes connected to the thin film transistor are arranged in a matrix manner has the best resolution and video performance. It is attracting attention.

The liquid crystal display includes a color filter substrate on which a common electrode is formed, an array substrate on which pixel electrodes are formed, and a liquid crystal interposed between the two substrates. In such a liquid crystal display, the common electrode and the pixel electrode are caused by an electric field applied up and down. It is excellent in the characteristics, such as transmittance | permeability and aperture ratio, by the method of driving a liquid crystal.

However, the liquid crystal drive due to the electric field applied up and down has a disadvantage that the viewing angle characteristics are not excellent.

Accordingly, a transverse field type liquid crystal display device having excellent viewing angle characteristics has been proposed to overcome the above disadvantages.

Hereinafter, a general transverse electric field type liquid crystal display device will be described in detail with reference to FIG. 1.

1 is a cross-sectional view of a general transverse electric field type liquid crystal display device.

As shown, the upper substrate 9, which is a color filter substrate, and the lower substrate 10, which is an array substrate, are spaced apart from each other, and the liquid crystal layer 11 is interposed between the upper and lower substrates 9, 10. It is.

The common electrode 17 and the pixel electrode 30 are formed on the lower substrate 10 on the same plane. In this case, the liquid crystal layer 11 is formed by the common electrode 17 and the pixel electrode 30. It is operated by the horizontal electric field (L).

2A and 2B are cross-sectional views illustrating operations of ON and OFF states of a general transverse electric field type liquid crystal display device, respectively.

First, referring to FIG. 2A, which illustrates an arrangement of liquid crystals in an on state where a voltage is applied, a phase change of a liquid crystal 11a at a position corresponding to the common electrode 17 and the pixel electrode 30 is performed. Although the liquid crystal 11b positioned in the section between the common electrode 17 and the pixel electrode 30 is formed by the horizontal electric field L formed by applying a voltage between the common electrode 17 and the pixel electrode 30, It is arranged in the same direction as the horizontal electric field (L). That is, in the transverse electric field type liquid crystal display device, since the liquid crystal moves by the horizontal electric field, the viewing angle is widened.

Next, referring to FIG. 2B, since no voltage is applied to the liquid crystal display, a horizontal electric field is not formed between the common electrode and the pixel electrode, so that the arrangement state of the liquid crystal layer 11 does not change.

As described above, the transverse electric field type liquid crystal display device has an advantage of a wide viewing angle. However, there is a problem that occurs because both the common electrode and the pixel electrode are formed on the lower substrate. That is, when static electricity is generated on the color filter substrate which is the upper substrate while the transverse electric field type liquid crystal display device is being driven, there is no configuration capable of emitting it to the outside.

That is, since the lower substrate includes components made of metal materials such as pixel electrodes and common electrodes, static electricity may be emitted to the outside through the lower substrate. Since only components made of non-metallic materials exist, damage by static electricity occurs.

The present invention is to prevent the damage caused by static electricity in the color filter substrate that is the upper substrate of the transverse electric field type liquid crystal display device as described above.

That is, to form a separate component on the color filter substrate, through this to effectively remove the static electricity.

In addition, in order to prevent damage to the lower substrate by static electricity to prevent the ground wiring is grounded to the outside exposed to the outside.

In order to solve the above problems, the present invention provides a display device comprising: a gate wiring positioned in the display area of a first substrate including a display area in which a pixel area is defined and a non-display area around the display area; A gate insulating film covering the gate wiring and positioned in front of the first substrate; A data line on the gate insulating layer, the data line crossing the gate line to define the pixel area; A thin film transistor positioned in the pixel area and connected to the gate line and the data line; A transparent pixel electrode on the gate line and connected to the thin film transistor and having a plate shape in the pixel area; A ground line on the gate insulating layer of the non-display area, the ground line extending out of the first substrate to be grounded; A protective layer covering the data line, the thin film transistor, the pixel electrode and the ground line, and having a contact hole exposing the ground line; A transparent common electrode on the passivation layer and having a plate shape with respect to the entire display area and having at least one opening corresponding to the pixel electrode; A transparent conductor layer positioned on the second side of the second substrate having a first side facing the first substrate and a second side opposite the first side; Conductive dots on one side of which are in contact with the transparent conductor layer and the other side of which is in contact with the ground wiring through the contact hole; Provided is a liquid crystal display including a liquid crystal layer interposed between the first and second substrates.

The ground line is made of the same material as the pixel electrode.

The ground wiring is made of the same material as the data wiring.

The conductive dot is made of silver.

A black matrix on the first surface of the second substrate and corresponding to the thin film transistor; And a color filter positioned on a first surface of the second substrate and corresponding to each pixel area.

In another aspect, the present invention includes forming a gate wiring in the display area of the first substrate including a display area in which a pixel area is defined and a non-display area around the display area; Forming a gate insulating film covering the gate wiring and corresponding to an entire surface of the first substrate; Forming a transparent pixel electrode having a plate shape on the gate insulating film, corresponding to the pixel electrode; Forming a ground line on the gate insulating layer, the ground line extending from the non-display area to the outside of the first substrate to be grounded; Forming a data line on the gate insulating film, the data line defining the pixel area to cross the gate line; Forming a thin film transistor connected to the gate line and the data line in the pixel area; Forming a protective layer covering the data line, the thin film transistor, the pixel electrode and the ground line, and having a contact hole exposing the ground line; Forming a transparent common electrode on the passivation layer, the transparent common electrode having a plate shape with respect to the entire display area and having at least one opening corresponding to the pixel electrode; Forming a transparent conductor layer over the entire first surface of the second substrate; Bonding the first substrate and the second substrate to face the common electrode of the first substrate and a second surface of the second substrate facing the first surface; Forming a liquid crystal layer between the first and second substrates; And forming a conductive dot at an edge of the second substrate, the one side of which is in contact with the transparent conductor layer and the other side of which is in contact with the ground wiring through the contact hole.

The forming of the ground line extending from the non-display area to the outside of the first substrate and grounded on the gate insulating layer may be performed at the same time as the forming of the pixel electrode.

The forming of the ground line extending from the non-display area to the outside of the first substrate and grounded on the gate insulating layer may be performed simultaneously with the forming of the data line.

Forming a black matrix on the second surface of the second substrate, the black matrix corresponding to the thin film transistor; And forming a color filter layer on the second surface of the second substrate and corresponding to each pixel area.

The present invention forms a transparent conductive layer on the outside of the color filter substrate of the liquid crystal display device and is connected to the ground wiring of the lower substrate, thereby eliminating static electricity generated on the color filter substrate, thereby preventing damage caused by static electricity.

In addition, damage to the ground wiring can be prevented at the source by preventing the ground wiring of the lower substrate from being exposed to the outside.

Hereinafter, the present invention will be described in detail with reference to the drawings.

3 is a schematic cross-sectional view of a portion of a liquid crystal display according to a first embodiment of the present invention.

As shown, the liquid crystal display device 100 includes a liquid crystal layer 170 interposed between the first and second substrates 110 and 160 facing each other and the first and second substrates 110 and 160. And a seal pattern 182 positioned at an edge between the first and second substrates 110 and 160 to prevent leakage of the liquid crystal layer 170.

The first substrate 110 is divided into a display area (not shown) in which a plurality of pixel areas P are defined, and a non-display area around the display area (not shown).

First, referring to the display area, the first substrate 110 includes a gate electrode 112, a gate insulating film 120 covering the gate electrode 112, and the gate electrode 112 on the gate insulating film 120. And a thin film including a semiconductor layer 126 formed of an active layer 122 and an ohmic contact layer 124, and a source electrode 132 and a drain electrode 134 disposed on the semiconductor layer 126 and spaced apart from each other. The transistor Tr is formed. The gate insulating layer 120 is made of an inorganic insulating material such as silicon oxide or silicon nitride. The active layer 122 is made of pure amorphous silicon, and the ohmic contact layer 124 is made of impurity amorphous silicon.

In addition, a gate line (not shown) and a data line (not shown) connected to the thin film transistor Tr are formed. The gate line is connected to the gate electrode 112 of the thin film transistor Tr, and the data line is connected to the source electrode 132 of the thin film transistor Tr. In addition, the gate line and the data line cross each other to define the pixel region P. FIG. That is, the gate line and the data line cross each other to define the pixel area P, and the thin film transistor Tr connected to the gate line and the data line is formed in the pixel area P.

A passivation layer 140 including a drain contact hole 142 exposing the drain electrode 134 of the thin film transistor Tr is formed on the thin film transistor Tr. The protective layer 140 is made of an organic insulating material such as benzocyclobutene (BCB) or photo acryl or an inorganic insulating material such as silicon nitride or silicon oxide.

 The pixel electrode 152 and the common electrode 154 are alternately arranged on the passivation layer 140. The pixel electrode 152 is connected to the drain electrode 134 of the thin film transistor Tr through the drain contact hole 142, and forms a horizontal electric field with the common electrode 154 to form the liquid crystal layer 170. ).

In the non-display area, the gate insulating layer 120 and the protective layer 140 are stacked on the first substrate 110, and a connection pattern 156 is formed on the protective layer 140. Formed. In addition, a flexible printed circuit board (FPCB) 186 is connected to one side of the connection pattern 156.

The first substrate 110 having the above-described configuration may be referred to as an array substrate.

The second substrate 160 facing the first substrate 110 has a black matrix 162 for blocking light in response to the thin film transistor Tr and a color filter layer on the black matrix 162. 164 is formed. The black matrix 162 and the color filter layer 164 are positioned on the inner side of the second substrate 160 to face the first substrate 110. The black matrix 162 is made of black resin.

In addition, a transparent conductor layer 166 made of a transparent conductive material is formed on an outer surface of the second substrate 160. The transparent conductor layer 166 is configured to emit and remove static electricity generated in the second substrate 160 to the outside. The second substrate 160 on which the above configuration is formed may be referred to as a color filter substrate.

In the liquid crystal display device 100, both the pixel electrode 152 and the common electrode 154 are formed on the first substrate 110, which is the lower substrate, and are formed on the second substrate 160, which is the upper substrate. ) And the color filter layer 164 are made of an insulating material, it is impossible to remove the static electricity generated in the second substrate 160. Therefore, in the present invention, the transparent conductor layer 166 is formed on the outer surface of the second substrate 160 by using a conductive material, thereby serving as a path for static electricity. In addition, since the liquid crystal display device 100 generates an image by passing light through the second substrate 160, the transparent conductor layer 160 should be made of a transparent material.

Conductive dots 184 are formed to connect the transparent conductor layer 166 on the outer surface of the second substrate 160 and the connection pattern 156 formed on the first substrate 110. have. The conductive dot 184 may be made of silver (Ag).

According to the above configuration, the static electricity generated on the second substrate 160 is transferred to the FPCB 186 through the transparent conductor layer 166, the conductive dot 184, and the connection pattern 156. Since the FPCB 186 is configured to be grounded to ground, static electricity is released as a result.

The connection pattern 156 may be formed of indium-tin-oxide (ITO) or indium-zinc-oxide, which is a transparent conductive material, similarly to the common electrode 154 or the pixel electrode 152. -zinc-oxide, IZO), the connection pattern 156 is exposed to the outside causes a problem that the connection is broken by damage. In addition, because materials such as ITO or IZO have a relatively high resistance, electrical damage is caused by static electricity. In this case, since static electricity generated in the second substrate 160 cannot be removed, damage caused by static electricity occurs in the second substrate 160.

4 is a schematic cross-sectional view of a part of a liquid crystal display according to a second embodiment of the present invention, to overcome the problems in the first embodiment described above.

As illustrated, the liquid crystal display 200 of the present invention includes a liquid crystal layer interposed between the first and second substrates 210 and 260 facing each other and the first and second substrates 210 and 260. 270 and a seal pattern 280 positioned at an edge between the first and second substrates 210 and 260 to prevent leakage of the liquid crystal layer 270.

The first substrate 210 is divided into a display area DR in which a plurality of pixel areas P are defined, and a non-display area NDR around the display area DR.

First, referring to the display area DR, the first substrate 210 may include a gate electrode 212, a gate insulating layer 216 covering the gate electrode 212, and the gate electrode on the gate insulating layer 216. A semiconductor layer 220 corresponding to 212 and formed of an active layer 220a and an ohmic contact layer 220b, and a source electrode 242 and a drain electrode 244 spaced apart from each other on the semiconductor layer 220. A thin film transistor Tr is formed. The gate insulating layer 216 is made of an inorganic insulating material such as silicon oxide or silicon nitride. The active layer 220a is made of pure amorphous silicon, and the ohmic contact layer 220b is made of impurity amorphous silicon.

In addition, a gate line (not shown) and a data line 240 connected to the thin film transistor Tr are formed. The gate line is connected to the gate electrode 212 of the thin film transistor Tr, and the data line 240 is connected to the source electrode 242 of the thin film transistor Tr. In addition, the gate line and the data line 240 cross each other to define the pixel area P. FIG. That is, the gate line and the data line 240 cross each other to define a pixel area P, and the thin film transistor Tr connected to the gate line and the data line 240 is formed in the pixel area P. It is.

The pixel electrode 230 is positioned in each pixel region P on the gate insulating layer 216. The pixel electrode 230 has a plate shape and substantially covers the entire pixel area P. FIG. The pixel electrode 230 is spaced apart from the semiconductor layer 220 by a predetermined interval and is connected to the drain electrode 244. The drain electrode 244 is in contact with the top surface of the pixel electrode 230. The pixel electrode 230 is made of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO).

In addition, a ground line 232 is positioned on the gate insulating layer 216 corresponding to the non-display area NDR. The ground wire 232 extends outside the first substrate 210 to be grounded to ground. The ground line 232 is positioned on the same layer as the pixel electrode 230 and made of the same material.

The passivation layer 250 is positioned to cover the thin film transistor Tr, the pixel electrode 230 and the ground wiring 232. The protective layer 250 is made of an organic insulating material such as benzocyclobutene (BCB) or photo acryl or an inorganic insulating material such as silicon nitride or silicon oxide. The protective layer 250 has a contact hole 252 exposing a part of the ground line 232.

The common electrode 254 having a plate shape with respect to the entire display area DR and having at least one opening 256 corresponding to the pixel electrode 230 is positioned on the passivation layer 250. The common electrode 254 is made of a transparent conductive material such as ITO and IZO. The common electrode 254 is not positioned in the non-display area NDR and the protective layer 250 is exposed. The common electrode 254 forms a fringe field with the pixel electrode 230 to drive the liquid crystal layer 270.

The first substrate 210 having the above-described configuration may be referred to as an array substrate.

On the second substrate 260 facing the first substrate 210, a black matrix 262 for blocking light in response to the thin film transistor Tr and a color filter layer disposed on the black matrix 262. 264 is formed. The black matrix 262 and the color filter layer 264 are positioned on the inner side of the second substrate 260 to face the first substrate 210. The black matrix 262 is made of black resin.

In addition, a transparent conductor layer 266 made of a transparent conductive material is formed on an outer surface of the second substrate 260. The transparent conductor layer 266 is configured to emit and remove static electricity generated in the second substrate 260 to the outside. The second substrate 260 on which the above configuration is formed may be referred to as a color filter substrate.

In addition, a conductive dot 290 connecting the transparent conductor layer 266 on the outer surface of the second substrate 260 and the ground wiring 232 formed on the first substrate 210 is provided. Formed. The conductive dot 290 is in contact with the ground line 232 through the contact hole 252 formed in the protective layer 250. The conductive dot 290 may be made of silver (Ag).

According to the above configuration, the static electricity generated on the second substrate 260 flows through the transparent conductor layer 266, the conductive dot 290, and the ground wiring 232, and the ground wiring 232 is Since it is configured to be grounded, the static electricity is released as a result.

In the first embodiment shown in FIG. 3, since the common electrode 154 and the pixel electrode 152 are positioned on the passivation layer 140, the connection pattern 156 may include the passivation layer 140. The outside will have to be exposed to the outside. Therefore, physical and chemical damage is applied to the connection pattern 156, and the liquid crystal display device may be damaged due to static electricity.

However, in the second exemplary embodiment illustrated in FIG. 4, the pixel electrode 230 and the common electrode 254 should be located on different layers, and the pixel electrode 230 covered by the protective layer 250 will be described. The ground line 232 is located on the same layer as the ground. Since the protective layer 250 covers the ground wiring 232, the ground wiring 232 does not leak to the outside. As a result, the discharge of the static electricity is effectively performed through the ground wiring 232. In addition, since the ground wiring 232 is made of a transparent conductive material resistant to corrosion such as ITO and IZO, similar to the pixel electrode 230, the contact hole 252 is formed before the conductive dot 290 is formed. The problem does not occur even when exposed to the outside.

4 is a schematic cross-sectional view of a portion of a liquid crystal display according to a third exemplary embodiment of the present invention.

As shown, the liquid crystal display device 300 of the present invention includes a liquid crystal layer interposed between the first and second substrates 310 and 360 facing each other and the first and second substrates 310 and 360. 370 and a seal pattern 380 positioned at an edge between the first and second substrates 310 and 360 to prevent leakage of the liquid crystal layer 370.

The first substrate 310 is divided into a display area DR in which a plurality of pixel areas P are defined, and a non-display area NDR around the display area DR.

First, referring to the display area DR, the first substrate 310 may include a gate electrode 312, a gate insulating layer 316 covering the gate electrode 312, and the gate electrode on the gate insulating layer 316. The semiconductor layer 320 corresponding to the 312 and formed of the active layer 320a and the ohmic contact layer 320b, and the source electrode 342 and the drain electrode 344 spaced apart from each other on the semiconductor layer 320. A thin film transistor Tr is formed. The gate insulating layer 316 is made of an inorganic insulating material such as silicon oxide or silicon nitride. The active layer 320a is made of pure amorphous silicon, and the ohmic contact layer 320b is made of impurity amorphous silicon.

In addition, a gate wiring (not shown) and a data wiring 340 connected to the thin film transistor Tr are formed. The gate line is connected to the gate electrode 312 of the thin film transistor Tr, and the data line 340 is connected to the source electrode 342 of the thin film transistor Tr. In addition, the gate line and the data line 340 cross each other to define the pixel area P. FIG. That is, the gate line and the data line 340 cross each other to define a pixel area P, and the thin film transistor Tr connected to the gate line and the data line 340 is formed in the pixel area P. It is.

The pixel electrode 330 is positioned in each pixel area P on the gate insulating layer 316. The pixel electrode 330 has a plate shape and substantially covers the entire pixel area P. FIG. The pixel electrode 330 is spaced apart from the semiconductor layer 320 by a predetermined interval and is connected to the drain electrode 344. The drain electrode 344 is in contact with the top surface of the pixel electrode 330. The pixel electrode 330 is made of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO).

In addition, a ground line 346 is positioned on the gate insulating layer 316 to correspond to the non-display area NDR. The ground line 346 extends outside the first substrate 310 to be grounded to ground. The ground line 346 is positioned on the same layer as the data line 340 and is formed of the same material. That is, the ground wiring 346 is made of a low resistance metal material such as aluminum, aluminum alloy, copper, copper alloy, and the like.

The passivation layer 350 is positioned to cover the thin film transistor Tr, the pixel electrode 330, and the ground wiring 346. The protective layer 350 is made of an organic insulating material such as benzocyclobutene (BCB) or photo acryl or an inorganic insulating material such as silicon nitride or silicon oxide. The protective layer 350 has a contact hole 352 exposing a part of the ground wiring 346.

The common electrode 354 has a plate shape with respect to the entire display area DR and has at least one opening 356 corresponding to the pixel electrode 330 on the passivation layer 350. The common electrode 354 is made of a transparent conductive material such as ITO and IZO. The common electrode 354 is not positioned in the non-display area NDR, and the protective layer 350 is exposed. The common electrode 354 forms a fringe field with the pixel electrode 330 to drive the liquid crystal layer 370.

The first substrate 310 having the above-described configuration may be referred to as an array substrate.

On the second substrate 360 facing the first substrate 310, a black matrix 362 for blocking light in response to the thin film transistor Tr and a color filter layer disposed on the black matrix 362. 364 is formed. The black matrix 362 and the color filter layer 364 are positioned on the inner side of the second substrate 360 to face the first substrate 310. The black matrix 362 is made of black resin.

In addition, a transparent conductor layer 366 made of a transparent conductive material is formed on an outer surface of the second substrate 360. The transparent conductor layer 366 is configured to emit and remove static electricity generated in the second substrate 360 to the outside. The second substrate 360 having the above-described configuration may be referred to as a color filter substrate.

In addition, a conductive dot 390 connecting the transparent conductor layer 366 on the outer surface of the second substrate 360 and the ground wiring 346 formed on the first substrate 310 is provided. Formed. The conductive dot 390 is in contact with the ground wiring 346 through the contact hole 352 formed in the protective layer 350. The conductive dot 390 may be made of silver (Ag).

According to the above configuration, the static electricity generated on the second substrate 360 flows through the transparent conductor layer 366, the conductive dot 390, and the ground wiring 346, and the ground wiring 346 is Since it is configured to be grounded, the static electricity is released as a result.

In the first embodiment shown in FIG. 3, since the common electrode 154 and the pixel electrode 152 are positioned on the passivation layer 140, the connection pattern 156 may include the passivation layer 140. The outside will have to be exposed to the outside. Therefore, physical and chemical damage is applied to the connection pattern 156, and the liquid crystal display device may be damaged due to static electricity.

However, in the third exemplary embodiment illustrated in FIG. 5, the ground line 346 is positioned on the same layer as the data line 340 covered by the protective layer 250. Since the protective layer 350 covers the ground wiring 346, the ground wiring 346 does not leak to the outside. As a result, the static electricity is effectively discharged through the ground wiring 346. In addition, since the ground line 346 is made of a low resistance metal material similarly to the data line 340, the ground line 346 has an advantage of effectively discharging static electricity to the ground.

Hereinafter, a method of manufacturing the liquid crystal display device of the present invention will be described with reference to FIGS. 6A to 6F and 7A to 7C.

6A to 6F are cross-sectional views illustrating a manufacturing process of an array substrate for a liquid crystal display device according to a second embodiment of the present invention, and FIGS. 7A to 7C are color filters for a liquid crystal display device according to a second embodiment of the present invention. It is sectional drawing which shows the manufacturing process of a board | substrate.

As shown in FIG. 6A, after depositing a first metal material on the first substrate 210 to form a first metal layer (not shown), application of photoresist, exposure using a mask, development of photoresist, A mask process including etching, stripping of photoresist, and the like is performed to form a gate wiring (not shown) extending in one direction, and at the same time, the gate electrode 212 connected to the gate wiring (not shown). To form. The first metal material may be any one of aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, chromium (Cr), and titanium alloy.

Next, an inorganic insulating material is deposited to cover the gate line and the gate electrode 212 to form a gate insulating layer 216. The gate insulating layer 216 is made of silicon nitride or silicon oxide.

Next, as shown in FIG. 6B, pure amorphous silicon and impurity amorphous silicon are sequentially deposited on the gate insulating layer 216 to form a pure amorphous silicon layer (not shown) and an impurity amorphous silicon layer (not shown). The mask is patterned by performing a mask process to form a pure amorphous silicon pattern 217 and an impurity amorphous silicon pattern 219 on top of the gate electrode 212.

Next, as shown in FIG. 6C, the pixel electrode 230 is formed in the pixel region P by forming a first transparent conductive material layer (not shown) on the gate insulating layer 216 and patterning the same by a mask process. Form. The pixel electrode 230 has a plate shape with respect to the entire pixel region P and is made of a transparent conductive material such as ITO and IZO. At the same time, the ground line 232 is formed on the gate insulating layer 216 in the non-display area NDR. That is, the ground line 232 is disposed on the same layer as the pixel electrode 230 and is made of the same material. The ground wire 232 extends outside the first substrate 210 to be grounded to ground.

Next, as shown in FIG. 6D, the pure amorphous silicon pattern (217 of FIG. 6B), the impurity amorphous silicon pattern (219 of FIG. 6B), the gate insulating layer 216, the pixel electrode 230, and the A second metal material, for example, molybdenum (Mo), copper (Cu), titanium alloy, and aluminum alloy (AlNd), is deposited on the ground line 232 to form a second metal layer (not shown) on the front surface. Subsequently, the second metal layer (not shown) is patterned to form a data line 240 defining the pixel region P to cross the gate line. At the same time, source and drain electrodes 242 and 244 are formed in the pixel region P in such a manner as to be spaced apart from each other on the impurity amorphous silicon pattern 219 of FIG. 6B. The source electrode 242 is connected to the data line 240.

Thereafter, the pure amorphous silicon pattern (FIG. 6B) between the source and drain electrodes 242 and 246 by removing the impurity amorphous silicon pattern (219 of FIG. 6B) between the source and drain electrodes 242 and 246 by dry etching. 217) is exposed to form an active layer 220a made of pure amorphous silicon. In addition, an ohmic contact layer 220b of impurity amorphous silicon is formed on the active layer 220a to be in contact with the source and drain electrodes 242 and 244 and spaced apart from each other. In this case, the active layer 220a and the ohmic contact layer 220b spaced apart from each other form a semiconductor layer 220. The gate electrode 212, the gate insulating layer 216, the semiconductor layer 220, the source electrode 242, and the drain electrode 244 form a thin film transistor Tr, which is a switching element. The thin film transistor Tr is a switching element, and is switched by the gate line (not shown) to apply data to the pixel electrode.

Next, as shown in FIG. 6E, the passivation layer 250 is disposed on the data line 240, the source electrode 242, the drain electrode 244, the ground line 232, and the pixel electrode 230. To form. The protective layer 250 is made of an inorganic insulating material such as silicon nitride or silicon oxide, or an organic insulating material such as benzocyclobutene (BCB) or photo acryl. Thereafter, the protective layer 250 is patterned by a mask process to form a contact hole 252 exposing the ground line 232.

Next, as shown in FIG. 6F, a display layer DR of the first substrate 210 is deposited by depositing a second transparent conductive material layer (not shown) on the protective layer 250 and patterning the same by a mask process. The array substrate is completed by forming a common electrode 254 covering the whole.

The common electrode 252 has at least one hole 256 with respect to the pixel electrode 230. The common electrode 252 is made of a transparent conductive material such as ITO and IZO, and forms a fringe field with the pixel electrode 230 to drive the liquid crystal layer 270 of FIG. 4.

Since the common electrode 252 is located only in the display area DR, in the non-display area NDR, the protective layer 250 is positioned at the top and the ground wiring 232 through the contact hole 252. This is in an exposed state.

Next, as shown in FIG. 7A, a black matrix 262 is formed on the first surface 261a of the second substrate 260 having the first and second surfaces 261a and 261b facing each other. The black matrix 262 may be made of black resin.

Next, as shown in FIG. 7B, a color filter layer 264 is formed on the first surface of the second substrate 260 on which the black matrix 262 is formed. The color filter layer 264 may include a red, green, and blue color filter pattern.

Next, as shown in FIG. 7C, a transparent conductive material such as ITO and IZO is laminated on the second surface 261b of the second substrate 260 to form the transparent conductor layer 266 on the second surface 261b. It is formed on the front surface to complete the color filter substrate.

Next, a seal pattern 280 of FIG. 4 is formed on one of the array substrate and the color filter substrate, and the array substrate and the color filter substrate face each other so that the color filter layer 264 and the common electrode 254 face each other. Are bonded. Thereafter, a liquid crystal layer (270 of FIG. 4) is injected between the array substrate and the color filter substrate, and the transparent conductor layer 266 and the ground wiring 232 are connected to an edge of the second substrate 260. By forming the conductive dots (290 of FIG. 4), the liquid crystal display device according to the present invention can be obtained. The conductive dot 290 is in contact with the ground wiring 232 through the contact hole 252 formed in the protective layer 250.

Although the above has been described with reference to a preferred embodiment of the present invention, those skilled in the art various modifications and changes of the present invention without departing from the spirit and scope of the present invention described in the claims below I can understand that you can.

1 is a cross-sectional view of a general transverse electric field type liquid crystal display device.

2A and 2B are cross-sectional views illustrating operations of ON and OFF states of a general transverse electric field type liquid crystal display device, respectively.

3 is a schematic cross-sectional view of a portion of a transverse electric field type liquid crystal display device according to a first embodiment of the present invention.

4 is a schematic cross-sectional view of a portion of a transverse electric field type liquid crystal display device according to a second exemplary embodiment of the present invention.

5 is a schematic cross-sectional view of a part of a transverse electric field type liquid crystal display device according to a third exemplary embodiment of the present invention.

6A to 6F are cross-sectional views illustrating a manufacturing process of an array substrate for a liquid crystal display according to a second embodiment of the present invention.

7A to 7C are cross-sectional views illustrating a manufacturing process of a color filter substrate for a liquid crystal display according to a second embodiment of the present invention.

Claims (9)

A gate wiring positioned in the display area of the first substrate including a display area in which a pixel area is defined and a non-display area around the display area; A gate insulating film covering the gate wiring and positioned in front of the first substrate; A data line on the gate insulating layer, the data line crossing the gate line to define the pixel area; A thin film transistor positioned in the pixel area and connected to the gate line and the data line; A transparent pixel electrode on the gate line and connected to the thin film transistor and having a plate shape in the pixel area; A ground line on the gate insulating layer of the non-display area, the ground line extending out of the first substrate to be grounded; A protective layer covering the data line, the thin film transistor, the pixel electrode and the ground line, and having a contact hole exposing the ground line; A transparent common electrode on the passivation layer and having a plate shape with respect to the entire display area and having at least one opening corresponding to the pixel electrode; A transparent conductor layer positioned on the second side of the second substrate having a first side facing the first substrate and a second side opposite the first side; Conductive dots on one side of which are in contact with the transparent conductor layer and the other side of which is in contact with the round wiring through the contact hole; Liquid crystal layer interposed between the first and second substrate Liquid crystal display comprising a. The method of claim 1, And the ground line is made of the same material as the pixel electrode. The method of claim 1, And the ground wiring is made of the same material as the data wiring. The method of claim 1, And the conductive dot is made of silver. The method of claim 1, A black matrix on the first surface of the second substrate and corresponding to the thin film transistor; And a color filter positioned on the first surface of the second substrate and corresponding to each pixel area. Forming a gate wiring in the display area of the first substrate including a display area in which a pixel area is defined and a non-display area around the display area; Forming a gate insulating film covering the gate wiring and corresponding to an entire surface of the first substrate; Forming a transparent pixel electrode having a plate shape on the gate insulating film, corresponding to the pixel electrode; Forming a ground line on the gate insulating layer, the ground line extending from the non-display area to the outside of the first substrate to be grounded; Forming a data line on the gate insulating film, the data line defining the pixel area to cross the gate line; Forming a thin film transistor connected to the gate line and the data line in the pixel area; Forming a protective layer covering the data line, the thin film transistor, the pixel electrode and the ground line, and having a contact hole exposing the ground line; Forming a transparent common electrode on the passivation layer, the transparent common electrode having a plate shape with respect to the entire display area and having at least one opening corresponding to the pixel electrode; Forming a transparent conductor layer over the entire first surface of the second substrate; Bonding the first substrate and the second substrate to face the common electrode of the first substrate and a second surface of the second substrate facing the first surface; Forming a liquid crystal layer between the first and second substrates; Forming a conductive dot at an edge of the second substrate, the one side of which is in contact with the transparent conductor layer and the other side of which is in contact with the ground wiring through the contact hole; Method of manufacturing a liquid crystal display device comprising a. The method of claim 6, And forming the ground wiring on the gate insulating layer extending outward from the first substrate in the non-display area and grounded at the same time as forming the pixel electrode. The method of claim 6, And forming the ground wiring on the gate insulating layer, which extends to the outside of the first substrate and is grounded in the non-display area, at the same time as the forming of the data wiring. The method of claim 6, Forming a black matrix on the second surface of the second substrate, the black matrix corresponding to the thin film transistor; And forming a color filter layer on the second surface of the second substrate and corresponding to each pixel area.

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