KR20110055483A - 반도체 웨이퍼 폴리싱 장치 및 폴리싱 방법 - Google Patents
반도체 웨이퍼 폴리싱 장치 및 폴리싱 방법 Download PDFInfo
- Publication number
- KR20110055483A KR20110055483A KR1020107026670A KR20107026670A KR20110055483A KR 20110055483 A KR20110055483 A KR 20110055483A KR 1020107026670 A KR1020107026670 A KR 1020107026670A KR 20107026670 A KR20107026670 A KR 20107026670A KR 20110055483 A KR20110055483 A KR 20110055483A
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- polishing
- pressure plate
- support plate
- polishing head
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 247
- 239000004065 semiconductor Substances 0.000 title claims description 23
- 238000000034 method Methods 0.000 title claims description 16
- 230000007246 mechanism Effects 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 230000033001 locomotion Effects 0.000 claims abstract description 10
- 235000012431 wafers Nutrition 0.000 claims description 248
- 238000007517 polishing process Methods 0.000 claims description 8
- 238000003825 pressing Methods 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 238000005299 abrasion Methods 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 24
- 239000002002 slurry Substances 0.000 description 11
- 238000012546 transfer Methods 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 5
- 239000007787 solid Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 229910000760 Hardened steel Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000809 air pollutant Substances 0.000 description 1
- 231100001243 air pollutant Toxicity 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005562 fading Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/130,190 US8192248B2 (en) | 2008-05-30 | 2008-05-30 | Semiconductor wafer polishing apparatus and method of polishing |
| US12/130,190 | 2008-05-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20110055483A true KR20110055483A (ko) | 2011-05-25 |
Family
ID=40941363
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020107026670A Withdrawn KR20110055483A (ko) | 2008-05-30 | 2009-05-19 | 반도체 웨이퍼 폴리싱 장치 및 폴리싱 방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8192248B2 (enExample) |
| EP (1) | EP2293902A1 (enExample) |
| JP (1) | JP2011522416A (enExample) |
| KR (1) | KR20110055483A (enExample) |
| CN (1) | CN102046331A (enExample) |
| WO (1) | WO2009146274A1 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10600634B2 (en) | 2015-12-21 | 2020-03-24 | Globalwafers Co., Ltd. | Semiconductor substrate polishing methods with dynamic control |
| WO2017146006A1 (ja) * | 2016-02-26 | 2017-08-31 | 株式会社フジミインコーポレーテッド | 研磨方法、研磨パッド |
| US10350504B2 (en) * | 2016-09-13 | 2019-07-16 | Universal City Studios Llc | Systems and methods for incorporating pneumatic robotic systems into amusement park attractions |
| CN108296931B (zh) * | 2018-02-02 | 2024-06-21 | 成都精密光学工程研究中心 | 一种带磨损补偿的偏摆式平面抛光装置 |
| US11081359B2 (en) | 2018-09-10 | 2021-08-03 | Globalwafers Co., Ltd. | Methods for polishing semiconductor substrates that adjust for pad-to-pad variance |
| CN109454547A (zh) * | 2018-12-27 | 2019-03-12 | 杭州众硅电子科技有限公司 | 一种用于cmp抛光垫寿命在线检测的系统和方法 |
| CN112894594A (zh) * | 2019-05-23 | 2021-06-04 | 黄彬庆 | 一种半导体晶片机械抛光加工系统及方法 |
| CN110421479B (zh) * | 2019-07-19 | 2021-01-26 | 许昌学院 | 一种电子器件用半导体晶片抛光设备 |
| CN110587469A (zh) * | 2019-09-29 | 2019-12-20 | 苏州光斯奥光电科技有限公司 | 一种用于液晶面板的研磨机构 |
| CN111906600B (zh) * | 2020-08-29 | 2021-09-28 | 中国航发南方工业有限公司 | 一种偏心型腔内端面磨削方法及装置 |
| EP4063069B1 (en) * | 2021-03-23 | 2022-12-07 | Andrea Valentini | Plate-like backing pad adapted for releasable attachment to a hand-held polishing or sanding power tool |
| CN114871941B (zh) * | 2022-04-25 | 2024-04-05 | 季华实验室 | 一种抛光头及抛光机 |
| CN116394153B (zh) * | 2023-02-28 | 2023-10-24 | 名正(浙江)电子装备有限公司 | 一种晶圆研磨抛光系统 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4918869A (en) * | 1987-10-28 | 1990-04-24 | Fujikoshi Machinery Corporation | Method for lapping a wafer material and an apparatus therefor |
| US5036630A (en) * | 1990-04-13 | 1991-08-06 | International Business Machines Corporation | Radial uniformity control of semiconductor wafer polishing |
| US5486129A (en) * | 1993-08-25 | 1996-01-23 | Micron Technology, Inc. | System and method for real-time control of semiconductor a wafer polishing, and a polishing head |
| US5658183A (en) * | 1993-08-25 | 1997-08-19 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical monitoring |
| JP2891068B2 (ja) * | 1993-10-18 | 1999-05-17 | 信越半導体株式会社 | ウエーハの研磨方法および研磨装置 |
| US5584746A (en) | 1993-10-18 | 1996-12-17 | Shin-Etsu Handotai Co., Ltd. | Method of polishing semiconductor wafers and apparatus therefor |
| JP3311116B2 (ja) * | 1993-10-28 | 2002-08-05 | 株式会社東芝 | 半導体製造装置 |
| US5624299A (en) * | 1993-12-27 | 1997-04-29 | Applied Materials, Inc. | Chemical mechanical polishing apparatus with improved carrier and method of use |
| US5664987A (en) * | 1994-01-31 | 1997-09-09 | National Semiconductor Corporation | Methods and apparatus for control of polishing pad conditioning for wafer planarization |
| US5908530A (en) | 1995-05-18 | 1999-06-01 | Obsidian, Inc. | Apparatus for chemical mechanical polishing |
| US5816900A (en) * | 1997-07-17 | 1998-10-06 | Lsi Logic Corporation | Apparatus for polishing a substrate at radially varying polish rates |
| US5934974A (en) * | 1997-11-05 | 1999-08-10 | Aplex Group | In-situ monitoring of polishing pad wear |
| US6531397B1 (en) * | 1998-01-09 | 2003-03-11 | Lsi Logic Corporation | Method and apparatus for using across wafer back pressure differentials to influence the performance of chemical mechanical polishing |
| US6174221B1 (en) * | 1998-09-01 | 2001-01-16 | Micron Technology, Inc. | Polishing chucks, semiconductor wafer polishing chucks, abrading methods, polishing methods, semiconductor wafer polishing methods, and methods of forming polishing chucks |
| US6176764B1 (en) * | 1999-03-10 | 2001-01-23 | Micron Technology, Inc. | Polishing chucks, semiconductor wafer polishing chucks, abrading methods, polishing methods, simiconductor wafer polishing methods, and methods of forming polishing chucks |
| US6120350A (en) * | 1999-03-31 | 2000-09-19 | Memc Electronic Materials, Inc. | Process for reconditioning polishing pads |
| JP4056205B2 (ja) * | 1999-10-15 | 2008-03-05 | 株式会社荏原製作所 | ポリッシング装置および方法 |
| JP4307674B2 (ja) * | 2000-01-26 | 2009-08-05 | 不二越機械工業株式会社 | ウェーハの研磨装置 |
| EP1268129A1 (en) * | 2000-03-30 | 2003-01-02 | Memc Electronic Materials S.P.A. | Method of polishing wafers |
| US7140956B1 (en) * | 2000-03-31 | 2006-11-28 | Speedfam-Ipec Corporation | Work piece carrier with adjustable pressure zones and barriers and a method of planarizing a work piece |
| US6616513B1 (en) * | 2000-04-07 | 2003-09-09 | Applied Materials, Inc. | Grid relief in CMP polishing pad to accurately measure pad wear, pad profile and pad wear profile |
| US6592434B1 (en) | 2000-11-16 | 2003-07-15 | Motorola, Inc. | Wafer carrier and method of material removal from a semiconductor wafer |
| KR20040011433A (ko) * | 2000-11-21 | 2004-02-05 | 엠이엠씨 일렉트로닉 머티리얼스 쏘시에떼 퍼 아찌오니 | 반도체 웨이퍼, 연마 장치 및 방법 |
| US6764387B1 (en) * | 2003-03-07 | 2004-07-20 | Applied Materials Inc. | Control of a multi-chamber carrier head |
| US7207871B1 (en) * | 2005-10-06 | 2007-04-24 | Applied Materials, Inc. | Carrier head with multiple chambers |
-
2008
- 2008-05-30 US US12/130,190 patent/US8192248B2/en active Active
-
2009
- 2009-05-19 EP EP09755636A patent/EP2293902A1/en not_active Withdrawn
- 2009-05-19 WO PCT/US2009/044501 patent/WO2009146274A1/en not_active Ceased
- 2009-05-19 KR KR1020107026670A patent/KR20110055483A/ko not_active Withdrawn
- 2009-05-19 JP JP2011511709A patent/JP2011522416A/ja active Pending
- 2009-05-19 CN CN2009801202686A patent/CN102046331A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN102046331A (zh) | 2011-05-04 |
| EP2293902A1 (en) | 2011-03-16 |
| US20090298399A1 (en) | 2009-12-03 |
| JP2011522416A (ja) | 2011-07-28 |
| WO2009146274A1 (en) | 2009-12-03 |
| US8192248B2 (en) | 2012-06-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20101129 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |