KR20110046437A - 플라즈마 처리 챔버 내의 막을 특성화하기 위한 ｒｆ 바이어스된 용량-결합형 정전 프로브 장치 - Google Patents

플라즈마 처리 챔버 내의 막을 특성화하기 위한 ｒｆ 바이어스된 용량-결합형 정전 프로브 장치 Download PDF

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Publication number
KR20110046437A
KR20110046437A KR1020117000084A KR20117000084A KR20110046437A KR 20110046437 A KR20110046437 A KR 20110046437A KR 1020117000084 A KR1020117000084 A KR 1020117000084A KR 20117000084 A KR20117000084 A KR 20117000084A KR 20110046437 A KR20110046437 A KR 20110046437A
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South Korea
Prior art keywords
voltage
time curve
film
capacitance value
capacitor
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KR1020117000084A
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English (en)
Korean (ko)
Inventor
쟝-뽈 부스
뤽 알바르드
정 김
더글라스 엘 케일
Original Assignee
램 리써치 코포레이션
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Publication of KR20110046437A publication Critical patent/KR20110046437A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49004—Electrical device making including measuring or testing of device or component part

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
KR1020117000084A 2008-07-07 2009-07-07 플라즈마 처리 챔버 내의 막을 특성화하기 위한 ｒｆ 바이어스된 용량-결합형 정전 프로브 장치 KR20110046437A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US7874808P 2008-07-07 2008-07-07
US61/078,748 2008-07-07
PCT/US2009/049762 WO2010005934A2 (fr) 2008-07-07 2009-07-07 Ensemble sonde électrostatique à couplage capacitif et à polarisation rf (rfb-cce) pour caractériser un film dans une chambre de traitement au plasma

Publications (1)

Publication Number Publication Date
KR20110046437A true KR20110046437A (ko) 2011-05-04

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117000084A KR20110046437A (ko) 2008-07-07 2009-07-07 플라즈마 처리 챔버 내의 막을 특성화하기 위한 ｒｆ 바이어스된 용량-결합형 정전 프로브 장치

Country Status (6)

Country Link
US (1) US8164353B2 (fr)
JP (1) JP5643198B2 (fr)
KR (1) KR20110046437A (fr)
CN (1) CN102084472B (fr)
TW (1) TWI458850B (fr)
WO (1) WO2010005934A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200033833A (ko) * 2012-06-08 2020-03-30 노벨러스 시스템즈, 인코포레이티드 Ｄｃ 셀프 바이어스 전압을 사용하여 막 두께를 결정하기 위한 시스템들 및 방법들

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200033833A (ko) * 2012-06-08 2020-03-30 노벨러스 시스템즈, 인코포레이티드 Ｄｃ 셀프 바이어스 전압을 사용하여 막 두께를 결정하기 위한 시스템들 및 방법들

Also Published As

Publication number Publication date
WO2010005934A3 (fr) 2010-05-06
US20100007362A1 (en) 2010-01-14
US8164353B2 (en) 2012-04-24
JP5643198B2 (ja) 2014-12-17
TW201002845A (en) 2010-01-16
WO2010005934A2 (fr) 2010-01-14
CN102084472B (zh) 2013-07-03
JP2011527523A (ja) 2011-10-27
CN102084472A (zh) 2011-06-01
TWI458850B (zh) 2014-11-01

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