KR20100132307A - Plasma display panel - Google Patents

Abstract

PURPOSE: A plasma display panel is provided to improve structure stability by controlling the non-resistance of an electrode. CONSTITUTION: A backside substrate(211) is arranged to be opposite to a front substrate. An electrode is arranged between the front substrate(201) and the backside substrate. The electrode includes silver material and glass material. A barrier rip(212) divides a discharge cell between the front substrate and the backside substrate. A barrier rip unit includes first and second barrier rips.

Description

Plasma Display Panel

The present invention relates to a plasma display panel.

The plasma display panel includes a phosphor layer formed in a discharge cell divided by a partition wall, and also includes a plurality of electrodes.

When the drive signal is supplied to the electrode of the plasma display panel, the discharge is generated by the drive signal supplied in the discharge cell. Here, when discharged by a drive signal in the discharge cell, the discharge gas filled in the discharge cell generates vacuum ultraviolet rays, and the vacuum ultraviolet light emits the phosphor formed in the discharge cell to emit visible light. Generate. The visible light displays an image on the screen of the plasma display panel.

SUMMARY OF THE INVENTION An object of the present invention is to provide a plasma display panel in which a specific resistance of an electrode is adjusted to improve structural stability while improving driving efficiency.

The plasma display panel according to the present invention includes a front substrate, a rear substrate disposed to face the front substrate, an electrode disposed between the front substrate and the rear substrate, and a partition wall partitioning a discharge cell between the front substrate and the rear substrate. The specific resistance of the electrode at an ambient temperature of 20 ° C. may be 2.0 × 10 ⁻⁶ to 2.5 × 10 ⁻⁶ [μm cm].

In addition, the change rate of the specific resistance of the electrode according to the temperature change at 20 ℃ ~ 70 ℃ may be 0.007 ~ 0.013 [Ωcm / ℃].

In addition, the electrode may include a glass material and silver (Ag) material.

In addition, another plasma display panel according to the present invention includes a front substrate, a first electrode disposed on the front substrate, a rear substrate on which a second electrode intersecting the first electrode is disposed, and a partition wall disposed between the front substrate and the rear substrate. The first electrode may be an ITO-Less electrode, and the specific resistance of the first electrode at an ambient temperature of 20 ° C. may be 2.0 × 10 ⁻⁶ to 2.5 × 10 ⁻⁶ [μm cm].

In addition, another plasma display panel according to the present invention is disposed between a front substrate, a rear substrate on which a first electrode disposed on the front substrate and a second electrode intersecting the first electrode, and a front substrate and a rear substrate are disposed. It includes a partition, the first electrode includes a transparent electrode and a bus electrode, the specific resistance of the bus electrode at an ambient temperature of 20 ℃ can be 2.0 × 10 ^-6 ~ 2.5 × 10 ^-6 [Ωcm].

In addition, another plasma display panel according to the present invention includes a front substrate, a rear substrate disposed to face the front substrate, an electrode disposed between the front substrate and the rear substrate, and a discharge cell partitioned between the front substrate and the rear substrate. Including the partition wall, the change rate of the specific resistance of the electrode according to the temperature change in the ambient temperature is 20 ℃ ~ 70 ℃ may be 0.007 ~ 0.013 [Ωcm / ℃].

Plasma display panel according to the present invention has the effect of improving the structural stability while improving the driving efficiency by controlling the specific resistance of the electrode.

Hereinafter, a plasma display device according to the present invention will be described in detail with reference to the accompanying drawings.

1 is a diagram for explaining a configuration of a plasma display device.

Referring to FIG. 1, the plasma display apparatus may include a plasma display panel 100 and a driver 110.

The plasma display panel 100 may include scan electrodes Y1 to Yn and sustain electrodes Z1 to Zn that are parallel to each other, and may include address electrodes X1 to Xm that cross the scan electrode and the sustain electrode. In addition, the plasma display panel 100 may implement an image in a frame including a plurality of subfields.

The driver 110 may supply a driving signal to at least one of a scan electrode, a sustain electrode, and an address electrode of the plasma display panel 100 to implement an image on the screen of the plasma display panel 100.

Here, in FIG. 1, only the case in which the driving unit 110 is formed in one board form is illustrated, but the driving unit 110 may be divided into a plurality of board forms according to electrodes formed on the plasma display panel 100. Do. For example, the driver 110 may include a first driver (not shown) for driving the scan electrode of the plasma display panel 100, a second driver for driving the sustain electrode, and a third driver (not shown) for driving the address electrode. Can be divided into

2 to 4 are diagrams for explaining the structure of the plasma display panel.

Referring to FIG. 2, the plasma display panel 100 includes a front substrate 201 in which scan electrodes 202 and Y and sustain electrodes 203 and Z are parallel to each other, and scan electrodes 202 and Y and a sustain electrode ( The back substrate 211 on which the address electrodes 213 and X intersect with 203 and Z may be formed.

The scan electrode 102 and the sustain electrode 103 may include the transparent electrodes 102a and 103a and the bus electrodes 102b and 103b as shown in FIG. 3.

The transparent electrodes 102a and 103a may include a substantially transparent material such as indium tin oxide (ITO), and the bus electrodes 102b and 103b may include the scan electrode 102 and the sustain electrode 103. It may be desirable to include an electrically conductive material, such as silver (Ag), in order to improve the electrical conductivity.

In addition, a black layer 300 is disposed between the transparent electrode 102a of the scan electrode 102 and the bus electrode 102b, and between the transparent electrode 103a of the sustain electrode 103 and the bus electrode 103b. It may be preferable that the black layer 300 is also disposed.

As described above, when the black layer 300 is disposed between the transparent electrodes 102a and 103a and the bus electrodes 102b and 103b, the contrast characteristic of the panel is prevented by preventing reflection of light incident from the outside. It is possible to improve.

Here, in order to increase driving efficiency, it may be desirable to lower the specific resistance of the scan electrode 102 and the sustain electrode 103.

On the other hand, unconditionally lowering the resistivity of the scan electrode 102 and the sustain electrode 103 may increase the possibility of lowering the structural stability of the panel by lowering the adhesion to the front substrate 101.

In consideration of this, it may be preferable that the specific resistance of the bus electrodes 102b and 103b is about 2.0 × 10 ⁻⁶ to 2.5 × 10 ⁻⁶ μm cm at room temperature. Here, the room temperature is 20 ℃, the specific resistance of the electrode at the ambient temperature is 20 ℃ can be seen to be 2.0 × 10 ^-6 ~ 2.5 × 10 ^-6 Ωcm.

Alternatively, as illustrated in FIG. 4, the scan electrode 102 and the sustain electrode 103 may be bus electrodes. That is, the scan electrode 102 and the sustain electrode 103 are ITO-Less electrodes.

In this case, the black layer 400 may be disposed between the scan electrode 102 and the sustain electrode 103 and the front substrate 101.

As shown in FIG. 4, when the scan electrode 102 and the sustain electrode 103 are ITO-Less electrodes, the specific resistance of the scan electrode 102 and the sustain electrode 103 is approximately 2.0 × 10 ⁻⁶ to 2.5 × 10 at room temperature. It may be desirable to be ^-6 dBm.

In addition, the resistivity of the address electrode may be preferably about 2.0 × 10 ⁻⁶ to 2.5 × 10 ⁻⁶ μm cm at room temperature.

On the front substrate 201 where the scan electrodes 202 and Y and the sustain electrodes 203 and Z are formed, the discharge currents of the scan electrodes 202 and Y and the sustain electrodes 203 and Z are limited and the scan electrodes 202 and Y are restricted. ) And an upper dielectric layer 204 may be arranged to insulate between the sustain electrodes 203 and Z.

A protective layer 205 may be formed on the front substrate 201 where the upper dielectric layer 204 is formed to facilitate discharge conditions. The protective layer 205 may include a material having a high secondary electron emission coefficient, such as magnesium oxide (MgO) material.

The address electrodes 213 and X are formed on the rear substrate 211, and the address electrodes 213 and X are covered on the upper side of the rear substrate 211 on which the address electrodes 213 and X are formed. A lower dielectric layer 215 may be formed that insulates X).

On top of the lower dielectric layer 215, a partition 212, such as a stripe type, a well type, a delta type, a honeycomb type, etc., for partitioning a discharge space, that is, a discharge cell, is formed. This can be formed. Accordingly, the first discharge cell emitting red (R) light, the second discharge cell emitting blue (B) light, and the green (Green) light between the front substrate 201 and the rear substrate 211. : G) A third discharge cell or the like that emits light can be formed.

The partition 212 may include a first partition 212b and a second partition 212a, and a height of the first partition 212b and a height of the second partition 212a may be different from each other.

In the discharge cell, the address electrode 213 may cross the scan electrode 202 and the sustain electrode 203. That is, the discharge cell is formed at the point where the address electrode 213 crosses the scan electrode 202 and the sustain electrode 203.

A predetermined discharge gas may be filled in the discharge cell partitioned by the partition wall 212.

In addition, a phosphor layer 214 that emits visible light for image display may be formed in the discharge cells partitioned by the partition wall 212. For example, a first phosphor layer that generates red light, a second phosphor layer that generates blue light, and a third phosphor layer that generates green light may be formed.

In addition, the address electrode 213 formed on the rear substrate 211 may have substantially the same width or thickness, but the width or thickness inside the discharge cell may be different from the width or thickness outside the discharge cell. . For example, the width or thickness inside the discharge cell may be wider or thicker than that outside the discharge cell.

When a predetermined signal is supplied to at least one of the scan electrode 202, the sustain electrode 203, and the address electrode 213, discharge may occur in the discharge cell. As such, when discharge is generated in the discharge cell, ultraviolet rays may be generated by the discharge gas filled in the discharge cell, and the ultraviolet rays may be irradiated onto the phosphor particles of the phosphor layer 214. Then, a predetermined image may be displayed on the screen of the plasma display panel 100 by the phosphor particles irradiated with ultraviolet rays to emit visible light.

5 is a view for explaining an example of a method of driving a plasma display panel. The driving waveform to be described below is supplied by the driving unit 110 of FIG. 1.

Referring to FIG. 5, in the reset period RP for initializing at least one subfield among a plurality of subfields of a frame, the reset signal RS is applied to the scan electrode Y. Can supply Here, the reset signal RS may include a rising ramp signal (Ramp-Up: RU) in which the voltage gradually rises and a falling ramp signal (Ramp-Down: RD) in which the voltage gradually falls.

For example, the rising ramp signal RU may be supplied to the scan electrode in the setup period SU of the reset period, and the falling ramp signal RD may be supplied to the scan electrode in the setdown period SD after the setup period. .

When the rising ramp signal is supplied to the scan electrode, a weak dark discharge, that is, setup discharge, occurs in the discharge cell by the rising ramp signal. By this setup discharge, the distribution of wall charges can be uniform in the discharge cells.

After the rising ramp signal is supplied, when the falling ramp signal is supplied to the scan electrode, a weak erase discharge, that is, a setdown discharge occurs in the discharge cell. By this set-down discharge, wall charges such that address discharge can be stably generated can be uniformly retained in the discharge cells.

In the address period AP after the reset period, the scan reference signal Ybias having a voltage higher than the lowest voltage of the falling ramp signal may be supplied to the scan electrode.

In addition, in the address period, the scan signal Sc that falls from the voltage of the scan reference signal Ybias may be supplied to the scan electrode.

Meanwhile, the pulse width of the scan signal supplied to the scan electrode in the address period of at least one subfield may be different from the pulse width of the scan signal of another subfield. For example, the width of the scan signal in the subfield located later in time may be smaller than the width of the scan signal in the preceding subfield. In addition, the reduction of the scan signal width according to the arrangement order of the subfields can be made gradually, such as 2.6 Hz (microseconds), 2.3 Hz, 2.1 Hz, 1.9 Hz, or 2.6 Hz, 2.3 Hz, 2.3 Hz, 2.1 Hz. .... 1.9 ㎲, 1.9 ㎲ and so on.

As such, when the scan signal is supplied to the scan electrode, the data signal Dt may be supplied to the address electrode X corresponding to the scan signal.

When the scan signal and the data signal are supplied, an address discharge may be generated in the discharge cell to which the data signal is supplied while the voltage difference between the scan signal and the data signal and the wall voltage generated by the wall charges generated in the reset period are added. .

In addition, the sustain reference signal Zbias signal may be supplied to the sustain electrode in the address period in which the address discharge occurs so that the address discharge is effectively generated between the scan electrode and the address electrode.

In the sustain period SP after the address period, the sustain signal SUS may be supplied to at least one of the scan electrode and the sustain electrode. For example, a sustain signal may be alternately supplied to the scan electrode and the sustain electrode.

When such a sustain signal is supplied, the discharge cell selected by the address discharge is added with the wall voltage in the discharge cell and the sustain voltage of the sustain signal, and a sustain discharge, that is, a display discharge occurs between the scan electrode and the sustain electrode when the sustain signal is supplied. Can be.

6 to 8 are views for explaining the specific resistance of the electrode in more detail. The specific resistance of the electrode in FIG. 6 is a measured value when the ambient temperature is 20 ° C.

Referring to FIG. 6, it can be seen that the specific resistance of the electrodes according to Examples 1 to 4 according to the present invention is about 2.0 × 10 ⁻⁶ to 2.5 × 10 ⁻⁶ [μm cm]. Here, the electrode may correspond to at least one of a bus electrode, an ITO-Less electrode, and an address electrode.

On the other hand, it can be seen that the specific resistance of the electrode according to Comparative Example 1 is approximately 3.5 × 10 ⁻⁶ [μm cm], and the specific resistance of the electrode according to Comparative Example 2 is approximately 1.7 × 10 ⁻⁶ [μm cm].

Here, Comparative Example 2 having a specific resistance of approximately 1.7 × 10 ⁻⁶ [μm cm] may have excellent driving efficiency because the specific resistance of the electrode is sufficiently low, but may have low structural stability. This will be described in more detail with reference to FIG. 7 as follows.

Looking at Figure 7, it can be seen that the lower the specific resistance of the electrode, the lower the adhesion of the electrode. For example, the adhesion force of the electrode may mean the adhesion force between the scan electrode and the sustain electrode, which are the front substrate and the ITO-Less electrode, the adhesion force between the back substrate and the address electrode, or the adhesion force between the transparent electrode and the bus electrode.

In detail, when the specific resistance of the electrode is about 2.0 × 10 ⁻⁶ [μm] or more, it can be seen that the adhesion force of the electrode is about 8.5 [Arb. Unit] or more. In addition, when the specific resistance of the electrode is about 2.5 × 10 ⁻⁶ [-cm] or more, the increase in adhesion force of the electrode is insignificant.

On the other hand, when the resistivity of the electrode is approximately 1.5 × 10 ⁻⁶ [μm cm], it can be seen that the adhesive force of the electrode is excessively low as approximately 1.5 [Arb. Unit]. As such, when the resistivity of the electrode is excessively low, the structural stability may be lowered by the lifting of the electrode during the firing process, and even the breakage of the electrode may occur.

The reason why the adhesion decreases when the resistivity of the electrode is excessively low may be that the metal content of the electrode is excessively high.

For example, in the case of forming an electrode having a content of silver (Ag) of 99% or more, the specific resistance of the electrode itself may be lowered, but the adhesion between the substrate and the electrode may be excessively lowered due to the properties of the silver material.

In order to improve the adhesion of the electrode, it may be preferable to use not only metal materials such as silver (Ag) but also glass materials.

On the other hand, when the content ratio of the glass material is excessively high during the manufacture of the electrode, the adhesion of the electrode can be sufficiently increased, but the specific resistance of the electrode may be excessively high. For example, as in Comparative Example 1 of FIG. 6, the specific resistance of the electrode may be increased to about 3.5 [cm 3].

As shown in FIG. 8, the higher the specific resistance of the electrode, the lower the efficiency. The efficiency in FIG. 8 means efficiency when the voltage Vs of the sustain signal is approximately 190V.

In detail, when the specific resistance of an electrode is about 1.5-2.5 [mm <cm>, it turns out that efficiency has a high value as about 1.32-1.29 [lm / w].

On the other hand, when the specific resistance of the electrode is approximately 3.0 to 3.5 [mm 3], it can be seen that the efficiency is low as approximately 1.20 to 1.16 [lm / w].

In view of the above data, it may be desirable for the specific resistance of the electrode at ambient temperature of 20 ° C. to be 2.0 × 10 ⁻⁶ to 2.5 × 10 ⁻⁶ [μm cm].

9 to 12 are diagrams for explaining the manufacturing method of the electrode.

Referring to FIG. 9, first, an electrode paste may be manufactured as shown in (a).

For example, an electrode paste having a viscosity may be manufactured by mixing an organic material such as silver (Ag) material, glass (Frit Glass), a binder, and a solvent.

Thereafter, the electrode paste 810 is coated on the substrate 800 as shown in (b).

For example, in step (b), although the electrode paste is not shown, the electrode paste applied to the upper part of the screen mask is applied by applying pressure with a squeeze after applying the upper part of the screen mask. It may be applied to the upper portion of the substrate 800 through a hole (Hole) formed in.

Thereafter, as shown in (c), a photo mask 820 in which a predetermined pattern is formed is disposed on the substrate 800 to which the electrode paste 810 is applied, and light such as ultraviolet rays is applied to the photo mask 800. A portion of the electrode paste 810 may be cured by irradiating the electrode paste 810 through a pattern of. This may be referred to as an exposure process.

Thereafter, the electrode paste 810 to which predetermined light is irradiated is removed. It develops using a developing solution. This may be referred to as a developing process.

Through the above process, as shown in (d), an electrode 830 having a predetermined pattern may be formed on the substrate 800.

Looking at the composition of the electrode paste that can be applied to the present invention with reference to FIG.

Referring to Figure 10, in Example 1 according to the present invention, the content of the silver (Ag) material 91 parts by weight, the content of the glass material (Frit Glass, F / G) 4 parts by weight, the binder, the solvent of the organic material such as solvent An electrode paste was prepared at a content ratio of 5% by weight, and an electrode was formed using the prepared electrode paste. It can be seen that the specific resistance of the electrode according to Example 1 is approximately 2.1 [μm cm].

As the electrode paste includes the metal material and the glass material as described above, the manufactured electrode may also include the metal material and the glass material.

On the other hand, the metal material that can be applied to the present invention is not particularly limited as long as it is a material having electrical accuracy as a component to have electrical conductivity as well as silver (Ag). However, in consideration of workability, high electrical conductivity, and manufacturing cost, the metal powder is at least one selected from the group consisting of silver (Ag) material, copper (Cu) material, aluminum (Al) material, and gold (Au) material. It may be preferred, and more preferably may be silver (Ag) material.

Herein, when the content of the metal material (Ag material) is excessively high, the adhesion of the electrode may be excessively reduced. On the other hand, when the content of the metal material is excessively low, the specific resistance value of the electrode may be excessively increased. . Therefore, the metal content is not less than 85 parts by weight and not more than 92 parts by weight. It is preferable.

The binder is not particularly limited, but in consideration of manufacturing cost, it may be preferable to use one of an acrylic binder or a methacrylic binder, or a mixture of an acrylic binder and a methacrylic binder.

The solvent is not particularly limited, but toluene, texanol and the like can be used in consideration of solubility, manufacturing cost, and the like.

The glass material may be melted during firing so that the shape of the electrode may be maintained, the electrode may have sufficient strength, and the adhesion of the electrode may be improved.

If the glass material is excessively high in content, the permittivity and resistivity of the electrode may be excessively increased, thereby reducing driving efficiency. On the other hand, when the content of the holding material is excessively low, the adhesion of the electrode may be excessively lowered. In consideration of this, the content of the glass material is preferably 3 parts by weight or more and 6 parts by weight or less.

The glass material may include at least one of Bi ₂ O ₃ material, B ₂ O ₃ material, SiO ₂ material, Al ₂ 0 _3] material, BaO material, CaO material and ZnO material.

In Example 2 according to the present invention, the content of silver (Ag) is 85 parts by weight, the content of glass (Frit Glass, F / G) is 6 parts by weight, the content of organic materials such as binder, solvent, etc. The electrode paste was manufactured, and the electrode was formed using the prepared electrode paste. It can be seen that the specific resistance of the electrode according to Example 2 is approximately 2.5 [cm 3].

In Example 3 according to the present invention, the content of silver (Ag) is 92 parts by weight, the content of glass (Frit Glass, F / G) is 3 parts by weight, the content of organic materials such as binder, solvent, etc. The electrode paste was manufactured, and the electrode was formed using the prepared electrode paste. It can be seen that the specific resistance of the electrode according to Example 3 is approximately 2.0 [cm 3].

In addition, in Example 4 according to the present invention, the content of silver (Ag) is 87 parts by weight, the content of glass (Frit Glass, F / G) is 6 parts by weight, the content of organic materials such as binders, solvents 7 Electrode paste was manufactured by weight ratio, and the electrode was formed using the prepared electrode paste. It can be seen that the specific resistance of the electrode according to the fourth embodiment is approximately 2.4 [cm].

In Examples 1 to 4 described above, it can be seen that the specific resistance of the electrode is within a preferred range of 2.0 to 2.5 [cm].

On the other hand, in Comparative Example 1, the content of silver (Ag) was 65 parts by weight, the content of glass (Frit Glass, F / G) was 15 parts by weight, and the content of organic materials such as binder and solvent was 20 parts by weight. An electrode paste was prepared and the electrode was formed using the prepared electrode paste. It can be seen that the specific resistance of the electrode according to Comparative Example 1 is approximately 3.5 [cm 3]. In Comparative Example 1, the content of silver (Ag) is excessively low, and the content of glass and organic materials is excessively high compared to the content of silver (Ag), so that the resistivity of the electrode is excessively high, thereby reducing driving efficiency. have.

In addition, in Comparative Example 2, the electrode content was 98 parts by weight of silver (Ag) material, 1 part by weight of glass (Frit Glass, F / G), and 1 part by weight of an organic material such as a binder and a solvent. The paste was prepared and the electrode was formed using the prepared electrode paste. It can be seen that the specific resistance of the electrode according to Comparative Example 2 is approximately 1.7 [Ωcm]. In Comparative Example 2, an excessively high content of silver (Ag) material may result in an excessively low adhesive force of the electrode, thereby lowering structural stability of the electrode.

As shown in Figure 10, it is possible to control the electrode resistivity by adjusting the content of the metal material and the content of the glass material of the electrode paste.

On the other hand, it may also be possible to control the specific resistance of the electrode by adjusting the size of the metal particles. This will be described in more detail with reference to FIG. 11 as follows.

11, in Example 1 according to the present invention, the content of silver (Ag) is 82 parts by weight, where the particle size of the silver (Ag) is about 1.2 μm of D50, and the glass material (Frit Glass, F / G) The electrode paste was prepared by using a content of 5 parts by weight, a content of an organic material such as a binder and a solvent in a 13 weight ratio, and an electrode was formed using the prepared electrode paste. It can be seen that the specific resistance of the electrode according to the first embodiment is about 2.2 [μm].

Here, the tapping density of silver (Ag) particles is 2.0 [g / cm ³ ] or more and 5.5 [g / cm ³ ] or less, and the surface area is 0.5 [m ² / g] or more It may be less than 4.5 [m ² / g].

In Example 2, the particle size of the silver (Ag) material is a case where the D50 is approximately 1.4 μm, and thus the specific resistance of the electrode is approximately 2.3 [μm cm].

In Example 3, the particle size of the silver (Ag) material is a case where the D50 is approximately 1.8 μm, and thus the specific resistance of the electrode is approximately 2.4 [μm cm].

In Examples 1 to 3, the particle size of the silver (Ag) material is sufficiently small, so that the density of the manufactured electrode can be improved. Accordingly, the specific resistance of the electrode is within 2.2 to 2.4 [Ωcm]. can see.

On the other hand, in Comparative Example 1, the particle size of the silver (Ag) material is D50 of approximately 2.5 μm, and thus the specific resistance of the electrode is approximately 3.0 [μm cm].

In addition, in Comparative Example 2, the particle size of the silver (Ag) material is D50 of approximately 3.0 μm, and thus the specific resistance of the electrode is approximately 3.5 [μm cm]. In Comparative Examples 1 and 2, the particle size of the silver (Ag) material is excessively large, and thus the specific resistance of the prepared electrode is lowered compared to Examples 1 to 3 of the present invention.

On the other hand, the smaller the particle size of the silver (Ag) material, the lower the specific resistance of the electrode, but it is very difficult in the process to make the particles of the silver (Ag) material unconditionally, and the cost may increase rapidly.

In consideration of the above, it may be preferable that the particle size of the metal particles that can be applied to the present invention is approximately 1.2 μm to 1.8 μm.

Meanwhile, the electrode according to the present invention may be manufactured by a direct printing method such as offset. This will be described with reference to FIG. 12. In FIG. 12, an offset method which is an example of a direct printing method will be described as an example.

Referring to FIG. 12, first, an electrode material 1210 in a paste state or a slurry state is coated on a surface of a mold 1200 as shown in (a).

Thereafter, the blanket 1220 is moved on the surface of the mold 1200 to which the electrode material 1210 is applied as shown in (b). As a result, the electrode material 1210 is buried on the surface of the blanket 1220.

On the other hand, the blanket 1220 may be in the form of a roller (Roller) in order to more effectively buried the electrode material 1210. As such, when the blanket 1220 has a roller shape, the electrode material 1210 may be buried while the blanket 1220 is rotated on the surface of the mold 1200.

Subsequently, the electrode material 1210 buried on the surface of the blanket 1220 is transferred to the substrate 1230 while moving the blanket 1220 on which the electrode material 1210 is buried, as shown in (c), above the substrate 1230. To be printed.

Thereafter, when the firing process is performed, an electrode 1240 may be formed on the substrate 1230.

As such, when the electrode is formed by the direct printing method, the content of a metal material such as silver (Ag) may be increased as compared with a method using a photosensitive material, and thus may be more advantageous in reducing the specific resistance of the electrode.

13 to 14 are diagrams for explaining the rate of change of the specific resistance of the electrode with temperature.

Referring to Figure 13, it is preferable that the change rate of the specific resistance according to the temperature change at 20 ℃ ~ 70 ℃ of the electrode according to the present invention may be 0.007 ~ 0.013 [Ωcm / ℃].

For example, as shown in the embodiment of FIG. 14, the content of silver (Ag) is 90 parts by weight (the particle size of the silver (Ag) is approximately 1.2 μm D50), and the content of glass (Frit Glass, F / G) is 5 An electrode paste may be prepared by using a content of an organic material such as a weight part, a binder, and a solvent in a 5 weight ratio, and an electrode may be formed using the prepared electrode paste.

The electrode formed according to this embodiment has a specific resistance of about 2.0 [μm cm] at 20 ° C., a resistivity of about 2.05 [Ωcm] at 30 ° C., and a resistivity of about 2.15 [Ωcm] at 40 ° C., and 50 ° C. It can be seen that the specific resistance at is about 2.2 [mm <cm], the specific resistance at 60 ° C is about 2.25 [cm], and the specific resistance at 70 ° C is about 2.35 [cm].

In the embodiment according to the present invention, the change rate of the specific resistance according to the temperature change at 20 ° C. to 70 ° C. of the electrode may be included in the range of 0.007 to 0.013 [Ωcm / ° C.]. In such an embodiment, the rate of change of the specific resistance according to the temperature of the electrode may be relatively small, thereby driving the temperature.

On the other hand, as in Comparative Example 1 of FIG. 14, the content of silver (Ag) was 67 parts by weight (the particle size of silver (Ag) was approximately 3.2 μm in D50), and the content of glass (Frit Glass, F / G). The electrode paste may be prepared using a content of 12 parts by weight, a content of an organic material such as a binder and a solvent in a 21 weight ratio, and an electrode may be formed using the prepared electrode paste.

The electrode formed according to Comparative Example 1 had a specific resistance of about 3.05 [cm] at 20 ° C, a resistivity of about 3.23 [cm] at 30 ° C, and a resistance of about 3.3 [cm] at 40 ° C. It can be seen that the specific resistance is about 3.4 [cm] at 60C, the specific resistance is about 3.52 [cm] at 60C, and the specific resistance is about 3.8 [cm] at 70C.

In addition, as in Comparative Example 2 of FIG. 14, the content of the silver (Ag) material was 70 parts by weight (the particle size of the silver (Ag) D50 was approximately 3.2 μm) and the content of the glass material (Frit Glass, F / G). An electrode paste may be prepared by using an organic material such as 9 parts by weight, a binder, and a solvent in a 21 weight ratio, and an electrode may be formed using the prepared electrode paste.

The electrode formed according to Comparative Example 2 had a specific resistance of about 3.1 [μm cm] at 20 ° C. as shown in FIG. 13, a specific resistance of about 3.23 μm cm at 30 ° C., and a relative resistance of about 3.35 μm cm at 40 ° C. It can be seen that the specific resistance is about 3.46 [cm] at 60 ° C, the specific resistance is about 3.69 [cm] at 60 ° C, and the specific resistance is about 3.9 [cm] at 70 ° C.

The change rate of the specific resistance according to the temperature change at 20 ° C. to 70 ° C. of the electrode in Comparative Example 1 may be approximately 0.015 [Ωcm / ° C.]. In addition, the change rate of the specific resistance according to the temperature change at 20 ° C ~ 70 ° C of the electrode in Comparative Example 2 may be approximately 0.016 [Ωcm / ° C]. In Comparative Examples 1 and 2, since the change rate of the specific resistance according to the temperature of the electrode is large, the driving characteristic may be changed according to the temperature, and thus driving may be unstable according to the temperature. For example, when the temperature of the panel is relatively high, the driving resistance may be reduced by excessively increasing the specific resistance of the electrode, and even a discharge may not occur at a high temperature.

15 to 16 are views for explaining a driving method to consider the rate of change of the specific resistance according to the temperature of the electrode.

13 to 14, the change rate of the specific resistance according to the temperature change at 20 ° C. to 70 ° C. of the electrode is 0.007 to 0.013 [Ωcm / ° C.], and the driving method is substantially the same regardless of the panel temperature. It may be possible to use.

Here, using the same driving method does not mean using the same driving method 100% irrespective of the input image data, and the same number and voltage of the reset signals, the same voltage and number of the sustain signals, It may mean that the voltage of the voltage and the data signal are the same.

Preferably, when the panel temperature is relatively high and relatively low, the voltage of the reset signal may be the same and the number of reset signals may be the same.

On the other hand, in Comparative Examples 1 and 2 of FIGS. 13 to 14, the change rate of the specific resistance according to the temperature of the electrode is relatively large, such as about 0.015 [Ωcm / ° C] or 0.016 [Ωcm / ° C]. Either increase or increase the voltage of a given signal.

For example, when the panel temperature is relatively high, the voltage of the reset signal may be higher as shown in FIG.

In Comparative Examples 1 and 2, since the specific resistance of the electrode according to the temperature change is relatively large, when the panel temperature is relatively high, the discharge may be weakened or even the discharge may not occur due to the specific resistance of the electrode.

Accordingly, when the panel temperature is relatively high, the voltage of the reset signal must be increased to sufficiently strengthen the reset discharge as shown in FIG. 15A. In this way, when the voltage of the reset signal is increased to sufficiently increase the intensity of the reset discharge, the discharge in the subsequent address period and the sustain period can be stabilized.

Alternatively, when the panel temperature is relatively high, the number of reset signals must be increased as shown in FIG. 16A to stabilize the reset discharge.

15 to 16, when the panel is at a relatively high temperature, if the voltage of the reset signal is increased or the number of reset signals is increased, it is possible to stabilize the discharge at a high temperature, but power consumption is high. Can increase.

On the other hand, in the present invention, since the change rate of the specific resistance according to the temperature change of the electrode is relatively small, the discharge can be sufficiently stabilized even without increasing the voltage of the reset signal and the number of reset signals even at a high temperature of the panel. . Accordingly, power consumption can be reduced.

As such, the technical configuration of the present invention described above can be understood by those skilled in the art that the present invention can be implemented in other specific forms without changing the technical spirit or essential features of the present invention.

Therefore, the exemplary embodiments described above are to be understood as illustrative and not restrictive in all respects, and the scope of the present invention is indicated by the appended claims rather than the foregoing detailed description, and the meaning and scope of the claims are as follows. And all changes or modifications derived from the equivalent concept should be interpreted as being included in the scope of the present invention.

1 is a diagram for explaining the configuration of a plasma display device;

2 to 4 are diagrams for explaining the structure of the plasma display panel.

5 is a view for explaining an example of a method of driving a plasma display panel.

6 to 8 are views for explaining the specific resistance of the electrode in more detail.

9 to 12 are views for explaining a method for manufacturing an electrode.

13 to 14 are diagrams for explaining the rate of change of the specific resistance of the electrode with temperature.

15 to 16 are views for explaining a driving method to consider the rate of change of the specific resistance according to the temperature of the electrode.

Claims (6)

Front substrate; A rear substrate disposed to face the front substrate; An electrode disposed between the front substrate and the rear substrate; And A partition wall partitioning a discharge cell between the front substrate and the rear substrate; Including, And a specific resistance of the electrode at an ambient temperature of 20 ° C. is 2.0 × 10 ⁻⁶ to 2.5 × 10 ⁻⁶ [Ωcm]. The method of claim 1, The change rate of the specific resistance of the electrode according to the temperature change at 20 ℃ ~ 70 ℃ is 0.007 ~ 0.013 [0.00cm / ℃] plasma display panel. The method of claim 1, The electrode includes a glass material and silver (Ag) material. Front substrate; A first electrode disposed on the front substrate; A rear substrate having a second electrode intersecting the first electrode; And Barrier ribs disposed between the front substrate and the rear substrate; Including, Wherein the first electrode is an ITO-Less electrode, and the specific resistance of the first electrode at an ambient temperature of 20 ° C. is 2.0 × 10 ⁻⁶ to 2.5 × 10 ⁻⁶ [Ωcm]. Front substrate; A first electrode disposed on the front substrate; A rear substrate having a second electrode intersecting the first electrode; And Barrier ribs disposed between the front substrate and the rear substrate; Including, The first electrode includes a transparent electrode and a bus electrode, and the specific resistance of the bus electrode at an ambient temperature of 20 ° C. is 2.0 × 10 ⁻⁶ to 2.5 × 10 ⁻⁶ [Ωcm]. Front substrate; A rear substrate disposed to face the front substrate; An electrode disposed between the front substrate and the rear substrate; And A partition wall partitioning a discharge cell between the front substrate and the rear substrate; Including, The change rate of the specific resistance of the electrode according to the temperature change in the ambient temperature of 20 ℃ ~ 70 ℃ plasma display panel is 0.007 ~ 0.013 [Ωcm / ℃].

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