KR20100081927A - 노광 장치 및 노광 장치를 사용하여 디바이스를 제조하는 방법 - Google Patents

노광 장치 및 노광 장치를 사용하여 디바이스를 제조하는 방법 Download PDF

Info

Publication number
KR20100081927A
KR20100081927A KR1020090131424A KR20090131424A KR20100081927A KR 20100081927 A KR20100081927 A KR 20100081927A KR 1020090131424 A KR1020090131424 A KR 1020090131424A KR 20090131424 A KR20090131424 A KR 20090131424A KR 20100081927 A KR20100081927 A KR 20100081927A
Authority
KR
South Korea
Prior art keywords
optical system
projection optical
exposure
light
shutter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1020090131424A
Other languages
English (en)
Korean (ko)
Inventor
오사무 야스노베
유우끼 우찌다
Original Assignee
캐논 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR20100081927A publication Critical patent/KR20100081927A/ko
Abandoned legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891Temperature
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70308Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground

Landscapes

  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020090131424A 2009-01-06 2009-12-28 노광 장치 및 노광 장치를 사용하여 디바이스를 제조하는 방법 Abandoned KR20100081927A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2009001015 2009-01-06
JPJP-P-2009-001015 2009-01-06
JPJP-P-2009-229734 2009-10-01
JP2009229734A JP2010181861A (ja) 2009-01-06 2009-10-01 露光装置、及びそれを用いたデバイスの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020130029056A Division KR20130032893A (ko) 2009-01-06 2013-03-19 노광 장치 및 노광 장치를 사용하여 디바이스를 제조하는 방법

Publications (1)

Publication Number Publication Date
KR20100081927A true KR20100081927A (ko) 2010-07-15

Family

ID=42311918

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020090131424A Abandoned KR20100081927A (ko) 2009-01-06 2009-12-28 노광 장치 및 노광 장치를 사용하여 디바이스를 제조하는 방법
KR1020130029056A Ceased KR20130032893A (ko) 2009-01-06 2013-03-19 노광 장치 및 노광 장치를 사용하여 디바이스를 제조하는 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020130029056A Ceased KR20130032893A (ko) 2009-01-06 2013-03-19 노광 장치 및 노광 장치를 사용하여 디바이스를 제조하는 방법

Country Status (3)

Country Link
US (1) US8363207B2 (https=)
JP (1) JP2010181861A (https=)
KR (2) KR20100081927A (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9235134B2 (en) * 2010-08-16 2016-01-12 Micron Technology, Inc. Lens heating compensation in photolithography
JP2012234110A (ja) * 2011-05-09 2012-11-29 Canon Inc 露光装置、およびそれを用いたデバイスの製造方法
CN102411264B (zh) * 2011-11-22 2014-07-16 上海华力微电子有限公司 光刻机投影物镜温度均衡装置及均衡方法
CN204406005U (zh) * 2015-02-28 2015-06-17 成都京东方光电科技有限公司 光取向设备

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63266821A (ja) * 1987-04-24 1988-11-02 Nippon Telegr & Teleph Corp <Ntt> 紫外線露光装置
JP2682067B2 (ja) * 1988-10-17 1997-11-26 株式会社ニコン 露光装置及び露光方法
JPH03222405A (ja) 1990-01-29 1991-10-01 Hitachi Ltd 露光装置およびそれに用いられる空露光方法
US6078380A (en) * 1991-10-08 2000-06-20 Nikon Corporation Projection exposure apparatus and method involving variation and correction of light intensity distributions, detection and control of imaging characteristics, and control of exposure
US5677757A (en) * 1994-03-29 1997-10-14 Nikon Corporation Projection exposure apparatus
US5995263A (en) * 1993-11-12 1999-11-30 Nikon Corporation Projection exposure apparatus
JP3552221B2 (ja) * 1995-09-11 2004-08-11 株式会社ニコン 投影露光装置
JPH09199384A (ja) * 1996-01-23 1997-07-31 Nec Kyushu Ltd 露光装置及び露光方法
JP2001351850A (ja) 2000-06-08 2001-12-21 Canon Inc 半導体製造装置および半導体デバイス製造方法
JP3341767B2 (ja) * 2001-10-10 2002-11-05 株式会社ニコン 投影露光装置及び方法、並びに回路素子形成方法

Also Published As

Publication number Publication date
JP2010181861A (ja) 2010-08-19
US8363207B2 (en) 2013-01-29
KR20130032893A (ko) 2013-04-02
US20100173236A1 (en) 2010-07-08

Similar Documents

Publication Publication Date Title
KR100554256B1 (ko) 광학 결상 시스템 작동방법, 리소그래피 투영장치,디바이스 제조방법, 및 그것에 의해 제조된 디바이스
TWI512406B (zh) 微影裝置,元件製造方法及相關資料處理裝置及電腦程式產品
TWI414767B (zh) 具有灰濾色鏡之波前感測器及包含該感測器之微影裝置
KR100268639B1 (ko) 투영노광장치 및 이것을 사용한 디바이스제조방법
TWI448658B (zh) 量測疊對誤差的方法及器件製造方法
TWI435182B (zh) 角度分辨散射計及檢查方法
US7083290B2 (en) Adjustment method and apparatus of optical system, and exposure apparatus
TWI715039B (zh) 用於補償一曝光誤差的方法、元件製造方法、基板台、微影裝置、控制系統、用於量測反射率的方法、及用於量測一極紫外線輻射劑量的方法
TWI480923B (zh) 最佳化方法及微影單元
TW200821770A (en) Method and apparatus for angular-resolved spectroscopic lithography characterization
NL2007052A (en) Calibration method and inspection apparatus.
CN110320742B (zh) 光刻装置、图案形成方法以及物品的制造方法
KR101267144B1 (ko) 센서의 교정 방법, 노광 방법, 노광 장치, 디바이스 제조방법, 및 반사형 마스크
TWI460549B (zh) 微影裝置及元件製造方法
WO1999031716A1 (en) Aligner, exposure method and method of manufacturing device
JP2002329651A (ja) 露光装置、露光装置の製造方法、及びマイクロデバイスの製造方法
KR20130032893A (ko) 노광 장치 및 노광 장치를 사용하여 디바이스를 제조하는 방법
JP3200244B2 (ja) 走査型露光装置
TWI467346B (zh) 決定特性之方法
JP2010283305A (ja) 露光装置及びデバイス製造方法
JP2001052986A (ja) X線投影露光装置
JP3218631B2 (ja) 投影露光装置
JP3958261B2 (ja) 光学系の調整方法
JP5517847B2 (ja) 露光装置、及びそれを用いたデバイスの製造方法
JP2010087506A (ja) 球状色収差補正のための検査装置、リソグラフィ装置および方法

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

A107 Divisional application of patent
J201 Request for trial against refusal decision
PA0107 Divisional application

St.27 status event code: A-0-1-A10-A18-div-PA0107

St.27 status event code: A-0-1-A10-A16-div-PA0107

PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

J301 Trial decision

Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20130319

Effective date: 20140411

Free format text: TRIAL NUMBER: 2013101002008; TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20130319

Effective date: 20140411

PJ1301 Trial decision

St.27 status event code: A-3-3-V10-V15-crt-PJ1301

Decision date: 20140411

Appeal event data comment text: Appeal Kind Category : Appeal against decision to decline refusal, Appeal Ground Text : 2009 0131424

Appeal request date: 20130319

Appellate body name: Patent Examination Board

Decision authority category: Office appeal board

Decision identifier: 2013101002008

PS0901 Examination by remand of revocation

St.27 status event code: A-6-3-E10-E12-rex-PS0901

S901 Examination by remand of revocation
GRNO Decision to grant (after opposition)
PS0701 Decision of registration after remand of revocation

St.27 status event code: A-3-4-F10-F13-rex-PS0701

NORF Unpaid initial registration fee
PC1904 Unpaid initial registration fee

St.27 status event code: A-2-2-U10-U13-oth-PC1904

St.27 status event code: N-2-6-B10-B12-nap-PC1904

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000