KR20100081927A - 노광 장치 및 노광 장치를 사용하여 디바이스를 제조하는 방법 - Google Patents

노광 장치 및 노광 장치를 사용하여 디바이스를 제조하는 방법 Download PDF

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Publication number
KR20100081927A
KR20100081927A KR1020090131424A KR20090131424A KR20100081927A KR 20100081927 A KR20100081927 A KR 20100081927A KR 1020090131424 A KR1020090131424 A KR 1020090131424A KR 20090131424 A KR20090131424 A KR 20090131424A KR 20100081927 A KR20100081927 A KR 20100081927A
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KR
South Korea
Prior art keywords
optical system
projection optical
exposure
light
shutter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1020090131424A
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English (en)
Korean (ko)
Inventor
오사무 야스노베
유우끼 우찌다
Original Assignee
캐논 가부시끼가이샤
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Filing date
Publication date
Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR20100081927A publication Critical patent/KR20100081927A/ko
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/201—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by an oblique exposure; characterised by the use of plural sources; characterised by the rotation of the optical device; characterised by a relative movement of the optical device, the light source, the sensitive system or the mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
    • G03F7/202—Masking pattern being obtained by thermal means, e.g. laser ablation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020090131424A 2009-01-06 2009-12-28 노광 장치 및 노광 장치를 사용하여 디바이스를 제조하는 방법 Abandoned KR20100081927A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2009001015 2009-01-06
JPJP-P-2009-001015 2009-01-06
JPJP-P-2009-229734 2009-10-01
JP2009229734A JP2010181861A (ja) 2009-01-06 2009-10-01 露光装置、及びそれを用いたデバイスの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020130029056A Division KR20130032893A (ko) 2009-01-06 2013-03-19 노광 장치 및 노광 장치를 사용하여 디바이스를 제조하는 방법

Publications (1)

Publication Number Publication Date
KR20100081927A true KR20100081927A (ko) 2010-07-15

Family

ID=42311918

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020090131424A Abandoned KR20100081927A (ko) 2009-01-06 2009-12-28 노광 장치 및 노광 장치를 사용하여 디바이스를 제조하는 방법
KR1020130029056A Ceased KR20130032893A (ko) 2009-01-06 2013-03-19 노광 장치 및 노광 장치를 사용하여 디바이스를 제조하는 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020130029056A Ceased KR20130032893A (ko) 2009-01-06 2013-03-19 노광 장치 및 노광 장치를 사용하여 디바이스를 제조하는 방법

Country Status (3)

Country Link
US (1) US8363207B2 (enExample)
JP (1) JP2010181861A (enExample)
KR (2) KR20100081927A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9235134B2 (en) * 2010-08-16 2016-01-12 Micron Technology, Inc. Lens heating compensation in photolithography
JP2012234110A (ja) * 2011-05-09 2012-11-29 Canon Inc 露光装置、およびそれを用いたデバイスの製造方法
CN102411264B (zh) * 2011-11-22 2014-07-16 上海华力微电子有限公司 光刻机投影物镜温度均衡装置及均衡方法
CN204406005U (zh) * 2015-02-28 2015-06-17 成都京东方光电科技有限公司 光取向设备

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63266821A (ja) * 1987-04-24 1988-11-02 Nippon Telegr & Teleph Corp <Ntt> 紫外線露光装置
JP2682067B2 (ja) * 1988-10-17 1997-11-26 株式会社ニコン 露光装置及び露光方法
JPH03222405A (ja) 1990-01-29 1991-10-01 Hitachi Ltd 露光装置およびそれに用いられる空露光方法
US6078380A (en) * 1991-10-08 2000-06-20 Nikon Corporation Projection exposure apparatus and method involving variation and correction of light intensity distributions, detection and control of imaging characteristics, and control of exposure
US5677757A (en) * 1994-03-29 1997-10-14 Nikon Corporation Projection exposure apparatus
US5995263A (en) * 1993-11-12 1999-11-30 Nikon Corporation Projection exposure apparatus
JP3552221B2 (ja) * 1995-09-11 2004-08-11 株式会社ニコン 投影露光装置
JPH09199384A (ja) * 1996-01-23 1997-07-31 Nec Kyushu Ltd 露光装置及び露光方法
JP2001351850A (ja) 2000-06-08 2001-12-21 Canon Inc 半導体製造装置および半導体デバイス製造方法
JP3341767B2 (ja) * 2001-10-10 2002-11-05 株式会社ニコン 投影露光装置及び方法、並びに回路素子形成方法

Also Published As

Publication number Publication date
JP2010181861A (ja) 2010-08-19
US20100173236A1 (en) 2010-07-08
US8363207B2 (en) 2013-01-29
KR20130032893A (ko) 2013-04-02

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