KR20100065127A - 진공 처리 시스템 및 기판 반송 방법 - Google Patents

진공 처리 시스템 및 기판 반송 방법 Download PDF

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Publication number
KR20100065127A
KR20100065127A KR1020097027030A KR20097027030A KR20100065127A KR 20100065127 A KR20100065127 A KR 20100065127A KR 1020097027030 A KR1020097027030 A KR 1020097027030A KR 20097027030 A KR20097027030 A KR 20097027030A KR 20100065127 A KR20100065127 A KR 20100065127A
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KR
South Korea
Prior art keywords
chamber
processing
pressure
substrate
conveyance
Prior art date
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Ceased
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KR1020097027030A
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English (en)
Korean (ko)
Inventor
데츠야 미야시타
도시하루 히라타
마사미치 하라
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20100065127A publication Critical patent/KR20100065127A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0461—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the presence of two or more transfer chambers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0464—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the transfer chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0466—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0476—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber

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  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020097027030A 2007-09-10 2008-09-01 진공 처리 시스템 및 기판 반송 방법 Ceased KR20100065127A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007233724A JP2009062604A (ja) 2007-09-10 2007-09-10 真空処理システムおよび基板搬送方法
JPJP-P-2007-233724 2007-09-10

Publications (1)

Publication Number Publication Date
KR20100065127A true KR20100065127A (ko) 2010-06-15

Family

ID=40451878

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097027030A Ceased KR20100065127A (ko) 2007-09-10 2008-09-01 진공 처리 시스템 및 기판 반송 방법

Country Status (5)

Country Link
JP (1) JP2009062604A (https=)
KR (1) KR20100065127A (https=)
CN (1) CN101688296A (https=)
TW (1) TW200931577A (https=)
WO (1) WO2009034869A1 (https=)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101254721B1 (ko) * 2011-03-30 2013-04-15 삼성전자주식회사 이에프이엠 버퍼 모듈
KR101318929B1 (ko) * 2012-06-18 2013-10-17 주식회사 씨엘디 가압 장치
KR101375646B1 (ko) * 2012-06-18 2014-03-18 주식회사 씨엘디 가압 장치 및 방법
KR101421795B1 (ko) * 2011-07-20 2014-07-22 가부시키가이샤 뉴플레어 테크놀로지 기상 성장 방법 및 기상 성장 장치
KR20150086833A (ko) * 2014-01-20 2015-07-29 주식회사 풍산 반도체 기판 처리장치
KR20210117943A (ko) * 2020-03-19 2021-09-29 도쿄엘렉트론가부시키가이샤 기판 반송 방법 및 기판 처리 장치

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011040538A1 (ja) * 2009-10-02 2011-04-07 東京エレクトロン株式会社 基板処理システム
TWI408766B (zh) * 2009-11-12 2013-09-11 日立全球先端科技股份有限公司 Vacuum processing device
CN101958231A (zh) * 2010-05-06 2011-01-26 东莞宏威数码机械有限公司 气体环境缓冲装置
KR20120015987A (ko) * 2010-08-12 2012-02-22 삼성전자주식회사 기판 처리 시스템
JP5785712B2 (ja) * 2010-12-28 2015-09-30 株式会社日立ハイテクノロジーズ 真空処理装置
JP5923288B2 (ja) * 2011-12-01 2016-05-24 株式会社日立ハイテクノロジーズ 真空処理装置及び真空処理装置の運転方法
CN103184427A (zh) * 2011-12-28 2013-07-03 绿种子科技(潍坊)有限公司 薄膜沉积装置及其使用方法
JP6120621B2 (ja) * 2013-03-14 2017-04-26 株式会社日立ハイテクノロジーズ 真空処理装置及びその運転方法
CN104421437B (zh) * 2013-08-20 2017-10-17 中微半导体设备(上海)有限公司 活动阀门、活动屏蔽门及真空处理系统
JP2017028209A (ja) * 2015-07-27 2017-02-02 東京エレクトロン株式会社 基板収納方法及び基板処理装置
JP6141479B1 (ja) * 2016-03-18 2017-06-07 エスペック株式会社 乾燥装置
CN106229287B (zh) * 2016-09-30 2019-04-05 厦门市三安光电科技有限公司 用于转移微元件的转置头及微元件的转移方法
CN110835739A (zh) * 2018-08-17 2020-02-25 中智(泰兴)电力科技有限公司 7腔体立式pecvd-pvd一体化硅片镀膜工艺
CN110835735A (zh) * 2018-08-17 2020-02-25 中智(泰兴)电力科技有限公司 一种8腔体卧式hwcvd-pvd一体化硅片镀膜工艺
KR102618825B1 (ko) * 2020-01-06 2023-12-27 삼성전자주식회사 베이 내 가스 누출 방지를 위한 에어락 장치 및 제어 시스템
JP7420350B2 (ja) * 2020-04-24 2024-01-23 島根島津株式会社 自動保管モジュールおよび自動保管システム
JP7344236B2 (ja) * 2021-02-08 2023-09-13 キヤノントッキ株式会社 搬送装置、成膜装置及び制御方法
CN113122812B (zh) * 2021-04-20 2023-06-09 郑州航空工业管理学院 一种物理气相沉积材料加工设备
CN116085226A (zh) * 2021-05-27 2023-05-09 中科晶源微电子技术（北京）有限公司 真空互锁抽气设备及真空互锁抽气的方法
KR102452714B1 (ko) * 2021-12-23 2022-10-07 주식회사 에이치피에스피 고압 및 진공공정 병행 챔버장치
US20250054724A1 (en) 2022-02-18 2025-02-13 Hitachi High-Tech Corporation Vacuum Processing Device
WO2026004914A1 (ja) * 2024-06-27 2026-01-02 株式会社カーボンフライ 長尺シート処理装置、長尺シート処理方法、カーボンナノチューブ製造装置、およびカーボンナノチューブ製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0793348B2 (ja) * 1989-05-19 1995-10-09 アプライド マテリアルズ インコーポレーテッド 多重チャンバ真空式処理装置及び多重チャンバ真空式半導体ウェーハ処理装置
JPH04254349A (ja) * 1991-02-06 1992-09-09 Sony Corp マルチチャンバプロセス装置
JP3486821B2 (ja) * 1994-01-21 2004-01-13 東京エレクトロン株式会社 処理装置及び処理装置内の被処理体の搬送方法
JP2003060008A (ja) * 2001-05-21 2003-02-28 Tokyo Electron Ltd 処理装置、移載装置、移載方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101254721B1 (ko) * 2011-03-30 2013-04-15 삼성전자주식회사 이에프이엠 버퍼 모듈
KR101421795B1 (ko) * 2011-07-20 2014-07-22 가부시키가이샤 뉴플레어 테크놀로지 기상 성장 방법 및 기상 성장 장치
KR101318929B1 (ko) * 2012-06-18 2013-10-17 주식회사 씨엘디 가압 장치
KR101375646B1 (ko) * 2012-06-18 2014-03-18 주식회사 씨엘디 가압 장치 및 방법
KR20150086833A (ko) * 2014-01-20 2015-07-29 주식회사 풍산 반도체 기판 처리장치
KR20210117943A (ko) * 2020-03-19 2021-09-29 도쿄엘렉트론가부시키가이샤 기판 반송 방법 및 기판 처리 장치

Also Published As

Publication number Publication date
WO2009034869A1 (ja) 2009-03-19
CN101688296A (zh) 2010-03-31
JP2009062604A (ja) 2009-03-26
TW200931577A (en) 2009-07-16

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