KR20100064050A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device Download PDF

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Publication number
KR20100064050A
KR20100064050A KR1020080122467A KR20080122467A KR20100064050A KR 20100064050 A KR20100064050 A KR 20100064050A KR 1020080122467 A KR1020080122467 A KR 1020080122467A KR 20080122467 A KR20080122467 A KR 20080122467A KR 20100064050 A KR20100064050 A KR 20100064050A
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South Korea
Prior art keywords
electrode
bonding
light emitting
emitting device
branch
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KR1020080122467A
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Korean (ko)
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KR101000277B1 (en
Inventor
김창태
남기연
이태희
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주식회사 에피밸리
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Priority to KR20080122467A priority Critical patent/KR101000277B1/en
Priority to PCT/KR2009/007236 priority patent/WO2010064870A2/en
Priority to CN2009801488467A priority patent/CN102239577A/en
Priority to JP2011539450A priority patent/JP2012511248A/en
Priority to US12/647,860 priority patent/US20100140656A1/en
Publication of KR20100064050A publication Critical patent/KR20100064050A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

The present disclosure relates to a semiconductor light emitting device, and more particularly, in a semiconductor light emitting device that generates light through recombination of electrons and holes, a first bonding electrode and a second bonding supplying a current for recombination of electrons and holes electrode; A first branch electrode and a second branch electrode extending from the first bonding electrode; A third extending from the second bonding electrode and positioned between the first branch electrode and the second branch electrode with a first gap with respect to the first branch electrode and with a second gap narrower than the first gap with respect to the second branch electrode; Wherein the second branch electrode is located farther from the center of the light emitting device than the first branch electrode, and the third branch electrode is located farther from the center of the light emitting device than the second branch electrode. It relates to a light emitting device.

Description

Semiconductor Light Emitting Device {SEMICONDUCTOR LIGHT EMITTING DEVICE}

The present disclosure relates to a semiconductor light emitting device as a whole, and more particularly, to a semiconductor light emitting device having an electrode structure for current diffusion.

Here, the semiconductor light emitting device refers to a semiconductor optical device that generates light through recombination of electrons and holes, for example, a group III nitride semiconductor light emitting device. The group III nitride semiconductor consists of a compound of Al (x) Ga (y) In (1-x-y) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). In addition, GaAs type semiconductor light emitting elements used for red light emission, etc. are mentioned.

This section provides backgound information related to the present disclosure which is not necessarily prior art.

1 is a view illustrating an example of a conventional Group III nitride semiconductor light emitting device, wherein the Group III nitride semiconductor light emitting device is grown on the substrate 100, the buffer layer 200 grown on the substrate 100, and the buffer layer 200. n-type group III nitride semiconductor layer 300, an active layer 400 grown on the n-type group III nitride semiconductor layer 300, p-type group III nitride semiconductor layer 500, p-type 3 grown on the active layer 400 The p-side electrode 600 formed on the group nitride semiconductor layer 500, the p-side bonding pad 700 formed on the p-side electrode 600, the p-type group III nitride semiconductor layer 500 and the active layer 400 are formed. The n-side electrode 800 and the passivation layer 900 are formed on the n-type group III nitride semiconductor layer 300 exposed by mesa etching.

As the substrate 100, a GaN-based substrate is used as the homogeneous substrate, and a sapphire substrate, a SiC substrate, or a Si substrate is used as the heterogeneous substrate. Any substrate may be used as long as the group III nitride semiconductor layer can be grown. When a SiC substrate is used, the n-side electrode 800 may be formed on the SiC substrate side.

Group III nitride semiconductor layers grown on the substrate 100 are mainly grown by MOCVD (organic metal vapor growth method).

The buffer layer 200 is intended to overcome the difference in lattice constant and thermal expansion coefficient between the dissimilar substrate 100 and the group III nitride semiconductor, and US Pat. A technique for growing an AlN buffer layer having a thickness of US Pat. No. 5,290,393 describes Al (x) Ga (1-x) N having a thickness of 10 kPa to 5000 kPa at a temperature of 200 to 900 C on a sapphire substrate. (0 ≦ x <1) A technique for growing a buffer layer is described, and US Patent Publication No. 2006/154454 discloses growing a SiC buffer layer (seed layer) at a temperature of 600 ° C. to 990 ° C., followed by In (x Techniques for growing a Ga (1-x) N (0 <x≤1) layer are described. Preferably, the undoped GaN layer is grown prior to the growth of the n-type Group III nitride semiconductor layer 300, which may be viewed as part of the buffer layer 200 or as part of the n-type Group III nitride semiconductor layer 300. .

In the n-type group III nitride semiconductor layer 300, at least a region (n-type contact layer) in which the n-side electrode 800 is formed is doped with impurities, and the n-type contact layer is preferably made of GaN and doped with Si. . U. S. Patent No. 5,733, 796 describes a technique for doping an n-type contact layer to a desired doping concentration by controlling the mixing ratio of Si and other source materials.

The active layer 400 is a layer that generates photons (light) through recombination of electrons and holes, and is mainly composed of In (x) Ga (1-x) N (0 <x≤1), and one quantum well layer (single quantum wells) or multiple quantum wells.

The p-type III-nitride semiconductor layer 500 is doped with an appropriate impurity such as Mg, and has an p-type conductivity through an activation process. U.S. Patent No. 5,247,533 describes a technique for activating a p-type group III nitride semiconductor layer by electron beam irradiation, and U.S. Patent No. 5,306,662 annealing at a temperature of 400 DEG C or higher to provide a p-type group III nitride semiconductor layer. A technique for activating is described, and US Patent Publication No. 2006/157714 discloses a p-type III-nitride semiconductor layer without an activation process by using ammonia and a hydrazine-based source material together as a nitrogen precursor for growing the p-type III-nitride semiconductor layer. Techniques for having this p-type conductivity have been described.

The p-side electrode 600 is provided to supply a good current to the entire p-type group III nitride semiconductor layer 500. US Patent No. 5,563,422 is formed over almost the entire surface of the p-type group III nitride semiconductor layer. A light-transmitting electrode made of Ni and Au in ohmic contact with the p-type III-nitride semiconductor layer 500 is described. US Pat. No. 6,515,306 describes a p-type III-nitride semiconductor layer. A technique has been described in which an n-type superlattice layer is formed and then a translucent electrode made of indium tin oxide (ITO) is formed thereon.

On the other hand, the p-side electrode 600 may be formed to have a thick thickness so as not to transmit light, that is, to reflect the light toward the substrate side, this technique is referred to as flip chip (flip chip) technology. U. S. Patent No. 6,194, 743 describes a technique relating to an electrode structure including an Ag layer having a thickness of 20 nm or more, a diffusion barrier layer covering the Ag layer, and a bonding layer made of Au and Al covering the diffusion barrier layer.

The p-side bonding pad 700 and the n-side electrode 800 are for supplying current and wire bonding to the outside, and US Patent No. 5,563,422 describes a technique in which the n-side electrode is composed of Ti and Al.

The passivation layer 900 is formed of a material such as silicon dioxide and may be omitted.

Meanwhile, the n-type III-nitride semiconductor layer 300 or the p-type III-nitride semiconductor layer 500 may be composed of a single layer or a plurality of layers, and recently, the substrate 100 may be formed by laser or wet etching. A technique for manufacturing a vertical light emitting device by separating from group III nitride semiconductor layers has been introduced.

2 is a view showing an example of the electrode structure described in U.S. Patent No. 5,563,422, wherein the p-side bonding pad 700 and the n-side electrode 800 are positioned at diagonal corners of the light emitting device to improve current spreading. It is described.

3 is a diagram illustrating an example of an electrode structure described in US Pat. No. 6,307,218. The light emitting device has branches having equal intervals between the p-side bonding pads 710 and 710 and the n-side electrodes 810 and 810 as the light emitting device becomes larger. Techniques for improving current spreading with electrodes 910 and 910 are described.

However, a light emitting device having such an electrode structure has a problem in that current may be concentrated in an area R close to the distance between the p-side bonding pads 710 and the n-side electrodes 810.

On the other hand, when a bonding failure occurs in the wires connected to the p-side bonding pads 710 or the n-side bonding pads 810, there is a problem that the current diffusion of the light emitting device is not smooth.

FIG. 4 is a diagram illustrating an example of a photograph of a semiconductor light emitting device in which wire bonding defects occur. FIG. 4A illustrates a light emitting device in which four wires are normally bonded, and FIG. 4B. Is a picture in which two wires fall, and the light emitting device in which two wires are diagonally bonded emits light, and FIG. 4 (c) shows that the light emitting device in which two wires are dropped and two wires are bonded only in one direction is lighted. It is a photograph. It can be seen that light does not come out evenly due to poor bonding of the wire.

In order to solve this problem, a light emitting device in which two bonding pads are attached to each other is introduced, but there is a problem in that current concentration occurs between the bonding pads located on opposite sides.

This will be described later in the Specification for Implementation of the Invention.

SUMMARY OF THE INVENTION Herein, a general summary of the present disclosure is provided, which should not be construed as limiting the scope of the present disclosure. of its features).

According to one aspect of the present disclosure, in a semiconductor light emitting device that generates light through recombination of electrons and holes, a first bonding supplying a current for recombination of electrons and holes An electrode and a second bonding electrode; A first branch electrode and a second branch electrode extending from the first bonding electrode; A third extending from the second bonding electrode and positioned between the first branch electrode and the second branch electrode with a first gap with respect to the first branch electrode and with a second gap narrower than the first gap with respect to the second branch electrode; Wherein the second branch electrode is located farther from the center of the light emitting device than the first branch electrode, and the third branch electrode is located farther from the center of the light emitting device than the second branch electrode. A light emitting element is provided.

According to an aspect according to the present disclosure, in a semiconductor light emitting device that generates light through recombination of electrons and holes, a first supplying current for recombination of electrons and holes A bonding electrode and a second bonding electrode, wherein at least one of the first bonding electrode and the second bonding electrode comprises: a first bonding electrode and a second bonding electrode having two bonding pads; A first branch electrode and a second branch electrode extending from the first bonding electrode; A third extending from the second bonding electrode and positioned between the first branch electrode and the second branch electrode with a first gap with respect to the first branch electrode and with a second gap narrower than the first gap with respect to the second branch electrode; There is provided a semiconductor light emitting device comprising a branch electrode.

This will be described later in the Specification for Implementation of the Invention.

The present disclosure will now be described in detail with reference to the accompanying drawing (s).

5 is a view illustrating an example of an electrode structure of a light emitting device according to the present disclosure. The electrode structure includes bonding pads 70 and 80 and branch electrodes 91, 92, 93, and 94.

Current is applied to the bonding pads 70 and 80. When a current is applied to the bonding pads 70 and 80, a current may not be evenly spread between the bonding pads 70 and 80, and a driving region (hereinafter, referred to as a concentrated region R) may occur. Here, the concentrated region R is often located on a straight line distance between the bonding pad 70 and the bonding pad 80, but in the present disclosure, the concentrated region R is the bonding pad 70 and the bonding pad 80. The present invention is not limited to the region R1 positioned on a straight line distance between the electrodes, and refers to a region where current is concentrated relatively to the surroundings. That is, the region R1 may be the concentrated region R with respect to the region R2, and the region R2 may be the concentrated region R with respect to the region R3 (FIG. 5A). Reference). Therefore, the concentrated region R may be formed by relatively changing the distribution of current even in the region R1.

The branch electrode 91 is connected to the bonding pad 70 and is positioned in the concentrated region R. The branch electrode 92 is connected to the bonding pad 80 and is positioned at a distance G1 from the branch electrode 91. The branch electrode 93 is connected to the branch electrode 91 and is positioned at a distance G2 from the branch electrode 92. At this time, the interval G1 is wider than the interval G2 (see FIG. 5B). Accordingly, the concentrated region R may be relaxed or eliminated. The branch electrode 92 and the branch electrode 93 may be sequentially removed from the branch electrode 91 so as to be more advantageous in relaxing or eliminating the concentrated region R. FIG. It is preferred to be arranged as.

Referring to FIG. 5C, the branch electrode 94 is positioned at a gap G3 narrower than the gap G1 with the branch electrode 93, and the gap G3 is preferably narrower than the gap G2. Do. The relationship between the gap G1 formed by the branch electrode 91 and the branch electrode 92 and the gap G2 formed by the branch electrode 92 and the branch electrode 93 is the interval G2 and the gap G3. Because it can be applied to.

FIG. 6 is a diagram illustrating an example of a semiconductor light emitting device according to the present disclosure. The light emitting device includes bonding pads 70 and 80 and branch electrodes 91, 92, 93, 94, and 95. Here, the light emitting device is an example of the size of 1mm horizontal, 1mm vertical.

The bonding pad 70 and the bonding pad 80 supply current to emit light in the active layer (see FIG. 1) by recombination of electrons and holes. The bonding pad 70 and the bonding pad 80 are located between both sides of the light emitting element. The bonding pads 70 are formed by attaching two circular pads 72 and 74 to each other. Meanwhile, in the bonding pad 70, two pads 72 and 74 which are circular are positioned apart from each other, and the two pads 72 and 74 are connected to each other by the branch electrodes 91, 93 and 95. It may be. The bonding pad 80 may also be formed in the same manner as the bonding pad 70. Meanwhile, the pads 72, 74, 82, and 84 may have various shapes such as ellipses and polygons.

The branch electrode 91 extends from the bonding pad 70 toward the bonding pad 80, which means that the branch electrode 91 is located in the concentrated region R, described with reference to FIG. 5.

The branch electrode 92 is positioned at a distance G1 from the branch electrode 91. For example, the branch electrodes 92 extend from the bonding pads 80 toward the bonding pads 70 so as to smoothly spread current at a distance G1 of about 128 μm from the branch electrodes 91. It is divided into and is bent and extended in the shape which embraces the branch electrode 91 as a whole.

The branch electrode 93 is positioned at a distance G2 narrower than the distance G1 with the branch electrode 92. For example, the branch electrode 93 is branched from the branch electrode 91 to both sides so that the current spreads smoothly with the branch electrode 92 at an interval G2 of about 89 μm. It is bent and extended in a shape to hold.

The branch electrode 94 is positioned at a distance G3 from the branch electrode 93. The interval G3 is narrower than the interval G1. As described with reference to FIG. 5, the interval G3 is preferably narrower than the interval G2. For example, the branch electrode 94 is divided from both sides of the branch electrode 92 so that the current can be smoothly spread with the branch electrode 93 at an interval G3 of about 80 μm. It is bent and extended in a shape to hold.

The branch electrode 95 may be positioned with respect to the branch electrode 94 at an interval G4 of, for example, about 89 μm, and the interval G4 is wider and narrower than the interval G3 depending on the degree of current concentration. Can also be formed.

The branch electrodes 92, 93, 94, and 95 have an annular extension e. Through the extension portion e, the current can be spread around, thereby further improving the spread of the current.

Hereinafter, various embodiments will be described in the present disclosure.

(1) A semiconductor light emitting device comprising a plurality of branch electrodes at different intervals. This can improve the concentration of the current.

(2) A semiconductor light emitting element comprising an electrode to which a plurality of wires can be bonded. This can improve the concentration of current even when the wire is poorly bonded to the electrode.

(3) a first bonding electrode and a second bonding electrode for supplying a current for recombination of electrons and holes; A first branch electrode and a second branch electrode extending from the first bonding electrode; A third extending from the second bonding electrode and positioned between the first branch electrode and the second branch electrode with a first gap with respect to the first branch electrode and with a second gap narrower than the first gap with respect to the second branch electrode; A branch electrode; wherein the second branch electrode is located farther from the center of the light emitting device than the first branch electrode, and the third branch electrode is located farther from the center of the light emitting device than the second branch electrode. At least one of the second bonding electrodes is located at the central portion of the light emitting device on one side of the semiconductor light emitting device. Thus, the current can be diffused from the center of the light emitting element to the surroundings.

According to one semiconductor light emitting device according to the present disclosure, it is possible to improve the concentration of current.

According to the other semiconductor light emitting device according to the present disclosure, it is possible to improve the concentration of the current in the case of poor wire bonding.

1 is a view showing an example of a conventional group III nitride semiconductor light emitting device,

2 is a view showing an example of an electrode structure described in US Patent No. 5,563,422;

3 is a view showing an example of an electrode structure described in US Pat. No. 6,307,218;

4 is a diagram illustrating an example of a photograph of a semiconductor light emitting device in which wire bonding defects occur;

5 is a view illustrating an example of an electrode structure of a semiconductor light emitting device according to the present disclosure;

6 illustrates an example of a semiconductor light emitting device according to the present disclosure.

Claims (10)

In a semiconductor light emitting device that generates light through recombination of electrons and holes, A first bonding electrode and a second bonding electrode supplying a current for recombination of electrons and holes; A first branch electrode and a second branch electrode extending from the first bonding electrode; A third extending from the second bonding electrode and positioned between the first branch electrode and the second branch electrode with a first gap with respect to the first branch electrode and with a second gap narrower than the first gap with respect to the second branch electrode; And a branch electrode; The second branch electrode is located farther from the center of the light emitting device than the first branch electrode, and the third branch electrode is located farther from the center of the light emitting device than the second branch electrode. The method according to claim 1, At least one of the first bonding electrode and the second bonding electrode includes two bonding pads. The method according to claim 1, At least one of the first bonding electrode and the second bonding electrode is a semiconductor light emitting device, characterized in that located in the central portion at one side of the light emitting device. The method according to claim 3, The first bonding electrode and the second bonding electrode are positioned facing each other. The method according to claim 1, The first branch electrode extends toward the second bonding electrode. The method according to claim 1, And a fourth branch electrode extending from the second bonding electrode and positioned at a third interval narrower than the second interval with respect to the second branch electrode. The method according to claim 2, At least one of the first bonding electrode and the second bonding electrode is located at the central portion of one side of the light emitting device, The first bonding electrode and the second bonding electrode are located facing each other, The first branch electrode extends toward the second bonding electrode. The method of claim 7, And a fourth branch electrode extending from the second bonding electrode and positioned at a third interval narrower than the second interval with respect to the second branch electrode. The method according to claim 8, The light emitting device is a semiconductor light emitting device, characterized in that the Group III nitride semiconductor light emitting device. In a semiconductor light emitting device that generates light through recombination of electrons and holes, A first bonding electrode and a second bonding electrode for supplying a current for recombination of electrons and holes, wherein at least one of the first bonding electrode and the second bonding electrode includes a first bonding electrode and a second bonding pad; Bonding electrodes; A first branch electrode and a second branch electrode extending from the first bonding electrode; A third extending from the second bonding electrode and positioned between the first branch electrode and the second branch electrode with a first gap with respect to the first branch electrode and with a second gap narrower than the first gap with respect to the second branch electrode; A branch light emitting device comprising a; electrode.
KR20080122467A 2008-12-04 2008-12-04 Semiconductor light emitting device KR101000277B1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR20080122467A KR101000277B1 (en) 2008-12-04 2008-12-04 Semiconductor light emitting device
PCT/KR2009/007236 WO2010064870A2 (en) 2008-12-04 2009-12-04 Semiconductor light-emitting device
CN2009801488467A CN102239577A (en) 2008-12-04 2009-12-04 Semiconductor light-emitting device
JP2011539450A JP2012511248A (en) 2008-12-04 2009-12-04 Semiconductor light emitting device
US12/647,860 US20100140656A1 (en) 2008-12-04 2009-12-28 Semiconductor Light-Emitting Device

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KR20080122467A KR101000277B1 (en) 2008-12-04 2008-12-04 Semiconductor light emitting device

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KR20100064050A true KR20100064050A (en) 2010-06-14
KR101000277B1 KR101000277B1 (en) 2010-12-10

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CN (1) CN102239577A (en)
WO (1) WO2010064870A2 (en)

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KR20150067032A (en) * 2013-12-09 2015-06-17 니치아 카가쿠 고교 가부시키가이샤 Light emitting element
WO2016003205A1 (en) * 2014-07-01 2016-01-07 서울바이오시스 주식회사 Light emitting element
KR20160003561A (en) * 2014-07-01 2016-01-11 서울바이오시스 주식회사 Light emitting device
KR20160091214A (en) * 2015-01-23 2016-08-02 서울바이오시스 주식회사 Semiconductor light emitting device

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JP4053926B2 (en) 2002-05-27 2008-02-27 日亜化学工業株式会社 Nitride semiconductor light emitting device and light emitting device using the same
KR100631969B1 (en) * 2005-02-28 2006-10-11 삼성전기주식회사 Nitride semiconductor light emitting device
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KR20150067032A (en) * 2013-12-09 2015-06-17 니치아 카가쿠 고교 가부시키가이샤 Light emitting element
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WO2016003205A1 (en) * 2014-07-01 2016-01-07 서울바이오시스 주식회사 Light emitting element
KR20160003561A (en) * 2014-07-01 2016-01-11 서울바이오시스 주식회사 Light emitting device
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KR20160091214A (en) * 2015-01-23 2016-08-02 서울바이오시스 주식회사 Semiconductor light emitting device

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KR101000277B1 (en) 2010-12-10
WO2010064870A2 (en) 2010-06-10
WO2010064870A3 (en) 2010-08-26
JP2012511248A (en) 2012-05-17
CN102239577A (en) 2011-11-09

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