KR101009653B1 - Iii-nitride semiconductor light emitting device - Google Patents
Iii-nitride semiconductor light emitting device Download PDFInfo
- Publication number
- KR101009653B1 KR101009653B1 KR1020080104569A KR20080104569A KR101009653B1 KR 101009653 B1 KR101009653 B1 KR 101009653B1 KR 1020080104569 A KR1020080104569 A KR 1020080104569A KR 20080104569 A KR20080104569 A KR 20080104569A KR 101009653 B1 KR101009653 B1 KR 101009653B1
- Authority
- KR
- South Korea
- Prior art keywords
- nitride semiconductor
- substrate
- iii nitride
- group iii
- light emitting
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 102
- 239000000758 substrate Substances 0.000 claims abstract description 91
- 150000004767 nitrides Chemical class 0.000 claims abstract description 84
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 11
- 239000010980 sapphire Substances 0.000 claims abstract description 11
- 230000006798 recombination Effects 0.000 claims abstract description 5
- 238000005215 recombination Methods 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 description 80
- 238000000034 method Methods 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000001000 micrograph Methods 0.000 description 3
- 238000009751 slip forming Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 238000001994 activation Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
The present disclosure relates to a group III nitride semiconductor light emitting device, and in particular, a substrate having a scattering region formed therein, wherein the scattering region is formed such that the substrate is transformed inside the substrate by a laser to have various scattering angles. Board; And a first group III nitride semiconductor layer formed on the substrate and having a first conductivity, a second group III nitride semiconductor layer formed on the first group III nitride semiconductor layer and having a second conductivity different from the first conductivity, and And a plurality of Group III nitride semiconductor layers positioned between the Group 1 III nitride semiconductor layers and the second Group III nitride semiconductor layers and having an active layer that generates light by recombination of electrons and holes. It relates to a nitride semiconductor light emitting device.
Group III nitride, semiconductor, light emitting device, scattering, substrate, sapphire, laser
Description
The present disclosure relates to a group III nitride semiconductor light emitting device as a whole, and more particularly, to a group III nitride semiconductor light emitting device in which a scattering region is formed inside a substrate to improve light extraction efficiency. Here, the group III nitride semiconductor light emitting device has a compound semiconductor layer of Al (x) Ga (y) In (1-xy) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). Means a light emitting device, such as a light emitting diode comprising a, and does not exclude the inclusion of a material consisting of elements of other groups such as SiC, SiN, SiCN, CN or a semiconductor layer of these materials.
This section provides backgound information related to the present disclosure which is not necessarily prior art.
1 is a view illustrating an example of a conventional Group III nitride semiconductor light emitting device, wherein the Group III nitride semiconductor light emitting device is grown on the
As the
Group III nitride semiconductor layers grown on the
The
In the n-type group III
The
The p-type III-
The p-
On the other hand, the p-
The p-
The
Meanwhile, the n-type III-
FIG. 2 is a view showing an example of the semiconductor light emitting device described in US Patent No. 6,657,236, which forms a
3 is a view showing another example of the semiconductor light emitting device described in US Patent No. 6,657,236, which forms a material layer 120 (SiO 2 or nitride layer) having a different refractive index on the
FIG. 4 is a view showing an example of a method of manufacturing a semiconductor light emitting device disclosed in US Patent Publication No. 2008/121906. In separating the light emitting devices into individual chips, a groove is first formed on the
FIG. 5 is a view showing an example of a method for manufacturing a semiconductor light emitting device disclosed in Japanese Patent Laid-Open No. 11-163403. A laser is irradiated to form a processing deformed
This will be described later in the Specification for Implementation of the Invention.
SUMMARY OF THE INVENTION Herein, a general summary of the present disclosure is provided, which should not be construed as limiting the scope of the present disclosure. of its features).
According to one aspect of the disclosure, a substrate having a scattering region formed therein, wherein the scattering region is transformed into a substrate in a substrate by means of a laser, A substrate formed to have a catering angle; And a first group III nitride semiconductor layer formed on the substrate and having a first conductivity, a second group III nitride semiconductor layer formed on the first group III nitride semiconductor layer and having a second conductivity different from the first conductivity, and And a plurality of Group III nitride semiconductor layers positioned between the Group 1 III nitride semiconductor layers and the second Group III nitride semiconductor layers and having an active layer that generates light by recombination of electrons and holes. A nitride semiconductor light emitting device is provided.
This will be described later in the Specification for Implementation of the Invention.
The present disclosure will now be described in detail with reference to the accompanying drawing (s).
6 is a diagram illustrating an example of a group III nitride semiconductor light emitting device according to the present disclosure, in which the group III nitride semiconductor light emitting device is epitaxially grown on the
The
FIG. 7 is a diagram illustrating an example of a substrate included in a group III nitride semiconductor light emitting device according to the present disclosure. A
FIG. 8 is a diagram illustrating another example of a substrate included in a group III nitride semiconductor light emitting device according to the present disclosure. A plurality of
9 is a view showing another example of a substrate provided in the group III nitride semiconductor light emitting device according to the present disclosure, wherein the
Hereinafter, a method of manufacturing a group III nitride semiconductor light emitting device according to the present disclosure will be described using an sapphire substrate as an example.
10 is a view showing an example of a method of manufacturing a group III nitride semiconductor light emitting device according to the present disclosure.
First, the board |
Next, the scattering area |
Next, the
Experimental Example
FIG. 11 shows a micrograph of the substrate processed according to the present experimental example as seen from above, and the
FIG. 12 illustrates a micrograph of the scattering regions viewed from above according to the present experimental example, wherein the
FIG. 13 is a photograph viewed from above of a group III nitride semiconductor light emitting device including a substrate processed according to the present experimental example, and it is seen that much light is emitted from the
The
Various embodiments of the present disclosure will be described below.
(1) A scattering region is a group III nitride semiconductor light emitting element, wherein the substrate is deformed by a laser.
(2) A group III nitride semiconductor light emitting element, wherein the scattering region is formed continuously across the substrate.
(3) A group III nitride semiconductor light emitting element, characterized in that a plurality of scattering regions are formed on a substrate.
(4) A group III nitride semiconductor light emitting element, wherein the substrate is made of sapphire.
(5) A group III nitride semiconductor light emitting element, wherein the scattering region is formed above the inside of the substrate.
(6) A group III nitride semiconductor light emitting element, wherein the substrate is made of sapphire, and the scattering region is a region where the substrate is deformed by a laser, and is formed on the inside of the substrate.
According to one group III nitride semiconductor light emitting device according to the present disclosure, it is possible to improve the light extraction efficiency of the light emitting device.
In addition, according to another group III nitride semiconductor light emitting device according to the present disclosure, it is possible to form a scattering region without being limited in the order of the steps.
In addition, according to another group III nitride semiconductor light emitting device according to the present disclosure, it is possible to improve the light extraction efficiency of the light emitting device through various scattering angles.
1 is a view showing an example of a conventional group III nitride semiconductor light emitting device,
2 is a view showing an example of a semiconductor light emitting device described in US Patent No. 6,657,236
3 is a view showing another example of the semiconductor light emitting device described in US Patent No. 6,657,236;
4 is a view showing an example of a method of manufacturing a semiconductor light emitting device disclosed in US Patent Publication No. 2008/121906;
5 is a view showing an example of a method of manufacturing a semiconductor light emitting device disclosed in Japanese Patent Laid-Open No. 11-163403;
6 is a view showing an example of a group III nitride semiconductor light emitting device according to the present disclosure;
7 is a view showing an example of a substrate provided in a group III nitride semiconductor light emitting device according to the present disclosure;
8 is a view showing another example of a substrate provided in the group III nitride semiconductor light emitting device according to the present disclosure;
9 is a view showing another example of a substrate provided in the group III nitride semiconductor light emitting device according to the present disclosure;
10 is a view showing an example of a method of manufacturing a group III nitride semiconductor light emitting device according to the present disclosure;
11 is a micrograph viewed from above of a substrate processed according to this Experimental Example;
12 is a photomicrograph of the substrate from above, in which scattering regions are formed at intervals according to the present experimental example;
FIG. 13 is a photograph seen from above of a group III nitride semiconductor light-emitting device comprising a substrate processed according to this Experimental Example. FIG.
Claims (8)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080104569A KR101009653B1 (en) | 2008-10-24 | 2008-10-24 | Iii-nitride semiconductor light emitting device |
PCT/KR2009/005707 WO2010047482A2 (en) | 2008-10-24 | 2009-10-07 | Group iii nitride semiconductor light emitting device |
CN200980142327XA CN102217103A (en) | 2008-10-24 | 2009-10-07 | Group iii nitride semiconductor light emitting device |
US12/647,750 US20100102352A1 (en) | 2008-10-24 | 2009-12-28 | III-Nitride Semiconductor Light Emitting Device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080104569A KR101009653B1 (en) | 2008-10-24 | 2008-10-24 | Iii-nitride semiconductor light emitting device |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20100045582A KR20100045582A (en) | 2010-05-04 |
KR101009653B1 true KR101009653B1 (en) | 2011-01-19 |
Family
ID=42119801
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020080104569A KR101009653B1 (en) | 2008-10-24 | 2008-10-24 | Iii-nitride semiconductor light emitting device |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR101009653B1 (en) |
CN (1) | CN102217103A (en) |
WO (1) | WO2010047482A2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102427637B1 (en) * | 2017-09-29 | 2022-08-01 | 삼성전자주식회사 | Semiconductor light emitting device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003338652A (en) | 2002-03-12 | 2003-11-28 | Hamamatsu Photonics Kk | Manufacturing method for semiconductor laser element and semiconductor laser element |
JP2004128445A (en) | 2002-07-29 | 2004-04-22 | Matsushita Electric Works Ltd | Light emitting element and its manufacture |
KR20070116086A (en) * | 2005-03-09 | 2007-12-06 | 쇼와 덴코 가부시키가이샤 | Nitride semiconductor light-emitting device and method for fabrication thereof |
KR20100010397A (en) * | 2008-07-22 | 2010-02-01 | 엘지이노텍 주식회사 | Semiconductor light emitting device and fabrication method thereof |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003338636A (en) * | 2002-03-12 | 2003-11-28 | Hamamatsu Photonics Kk | Manufacturing method of light-emitting device, light emitting diode, and semiconductor laser element |
US6878969B2 (en) * | 2002-07-29 | 2005-04-12 | Matsushita Electric Works, Ltd. | Light emitting device |
US6967346B2 (en) * | 2003-08-02 | 2005-11-22 | Formosa Epitaxy Incorporation | Light emitting diode structure and manufacture method thereof |
JP4536407B2 (en) * | 2004-03-30 | 2010-09-01 | 浜松ホトニクス株式会社 | Laser processing method and object to be processed |
CN100369276C (en) * | 2004-09-06 | 2008-02-13 | 璨圆光电股份有限公司 | LED structure |
KR20070035758A (en) * | 2005-09-28 | 2007-04-02 | 엘지전자 주식회사 | Organic electroluminescence device with photonic crystal and method of making the same |
JP4907984B2 (en) * | 2005-12-27 | 2012-04-04 | 浜松ホトニクス株式会社 | Laser processing method and semiconductor chip |
-
2008
- 2008-10-24 KR KR1020080104569A patent/KR101009653B1/en not_active IP Right Cessation
-
2009
- 2009-10-07 WO PCT/KR2009/005707 patent/WO2010047482A2/en active Application Filing
- 2009-10-07 CN CN200980142327XA patent/CN102217103A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003338652A (en) | 2002-03-12 | 2003-11-28 | Hamamatsu Photonics Kk | Manufacturing method for semiconductor laser element and semiconductor laser element |
JP2004128445A (en) | 2002-07-29 | 2004-04-22 | Matsushita Electric Works Ltd | Light emitting element and its manufacture |
KR20070116086A (en) * | 2005-03-09 | 2007-12-06 | 쇼와 덴코 가부시키가이샤 | Nitride semiconductor light-emitting device and method for fabrication thereof |
KR20100010397A (en) * | 2008-07-22 | 2010-02-01 | 엘지이노텍 주식회사 | Semiconductor light emitting device and fabrication method thereof |
Also Published As
Publication number | Publication date |
---|---|
KR20100045582A (en) | 2010-05-04 |
WO2010047482A2 (en) | 2010-04-29 |
CN102217103A (en) | 2011-10-12 |
WO2010047482A3 (en) | 2010-08-05 |
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