WO2010047482A3 - Group iii nitride semiconductor light emitting device - Google Patents

Group iii nitride semiconductor light emitting device Download PDF

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Publication number
WO2010047482A3
WO2010047482A3 PCT/KR2009/005707 KR2009005707W WO2010047482A3 WO 2010047482 A3 WO2010047482 A3 WO 2010047482A3 KR 2009005707 W KR2009005707 W KR 2009005707W WO 2010047482 A3 WO2010047482 A3 WO 2010047482A3
Authority
WO
WIPO (PCT)
Prior art keywords
nitride semiconductor
iii nitride
group
light emitting
emitting device
Prior art date
Application number
PCT/KR2009/005707
Other languages
French (fr)
Korean (ko)
Other versions
WO2010047482A2 (en
Inventor
김창태
나민규
Original Assignee
주식회사 에피밸리
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 에피밸리 filed Critical 주식회사 에피밸리
Priority to CN200980142327XA priority Critical patent/CN102217103A/en
Priority to US12/647,750 priority patent/US20100102352A1/en
Publication of WO2010047482A2 publication Critical patent/WO2010047482A2/en
Publication of WO2010047482A3 publication Critical patent/WO2010047482A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The present disclosure relates to a Group-III nitride semiconductor light emitting device, more specifically to the Group III nitride semiconductor light emitting device comprising: a substrate that includes a scattering region therein; a Group I, III nitride semiconductor layer that is formed on the substrate and has a first conductivity; a Group II, III nitride semiconductor layer that is formed on the Group I, III nitride semiconductor layer and has a second conductivity different from the first conductivity; and plural Group III nitride semiconductor layers that are placed between the Group I, III and Group II, III nitride semiconductor layers and include an activation layer that generates light through the recombination of electrons with holes.
PCT/KR2009/005707 2008-10-24 2009-10-07 Group iii nitride semiconductor light emitting device WO2010047482A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN200980142327XA CN102217103A (en) 2008-10-24 2009-10-07 Group iii nitride semiconductor light emitting device
US12/647,750 US20100102352A1 (en) 2008-10-24 2009-12-28 III-Nitride Semiconductor Light Emitting Device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0104569 2008-10-24
KR1020080104569A KR101009653B1 (en) 2008-10-24 2008-10-24 Iii-nitride semiconductor light emitting device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/647,750 Continuation US20100102352A1 (en) 2008-10-24 2009-12-28 III-Nitride Semiconductor Light Emitting Device

Publications (2)

Publication Number Publication Date
WO2010047482A2 WO2010047482A2 (en) 2010-04-29
WO2010047482A3 true WO2010047482A3 (en) 2010-08-05

Family

ID=42119801

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/005707 WO2010047482A2 (en) 2008-10-24 2009-10-07 Group iii nitride semiconductor light emitting device

Country Status (3)

Country Link
KR (1) KR101009653B1 (en)
CN (1) CN102217103A (en)
WO (1) WO2010047482A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102427637B1 (en) * 2017-09-29 2022-08-01 삼성전자주식회사 Semiconductor light emitting device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070005707A (en) * 2004-03-30 2007-01-10 하마마츠 포토닉스 가부시키가이샤 Laser processing method and object to be processed
KR20070035758A (en) * 2005-09-28 2007-04-02 엘지전자 주식회사 Organic electroluminescence device with photonic crystal and method of making the same
KR20080080085A (en) * 2005-12-27 2008-09-02 하마마츠 포토닉스 가부시키가이샤 Laser beam machining method and semiconductor chip
KR20100010397A (en) * 2008-07-22 2010-02-01 엘지이노텍 주식회사 Semiconductor light emitting device and fabrication method thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4851060B2 (en) 2002-03-12 2012-01-11 浜松ホトニクス株式会社 Manufacturing method of semiconductor laser device
JP2003338636A (en) * 2002-03-12 2003-11-28 Hamamatsu Photonics Kk Manufacturing method of light-emitting device, light emitting diode, and semiconductor laser element
JP4329374B2 (en) 2002-07-29 2009-09-09 パナソニック電工株式会社 LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF
US6878969B2 (en) * 2002-07-29 2005-04-12 Matsushita Electric Works, Ltd. Light emitting device
US6967346B2 (en) * 2003-08-02 2005-11-22 Formosa Epitaxy Incorporation Light emitting diode structure and manufacture method thereof
CN100369276C (en) * 2004-09-06 2008-02-13 璨圆光电股份有限公司 LED structure
KR100926094B1 (en) * 2005-03-09 2009-11-11 쇼와 덴코 가부시키가이샤 Nitride semiconductor light-emitting device and method for fabrication thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070005707A (en) * 2004-03-30 2007-01-10 하마마츠 포토닉스 가부시키가이샤 Laser processing method and object to be processed
KR20070035758A (en) * 2005-09-28 2007-04-02 엘지전자 주식회사 Organic electroluminescence device with photonic crystal and method of making the same
KR20080080085A (en) * 2005-12-27 2008-09-02 하마마츠 포토닉스 가부시키가이샤 Laser beam machining method and semiconductor chip
KR20100010397A (en) * 2008-07-22 2010-02-01 엘지이노텍 주식회사 Semiconductor light emitting device and fabrication method thereof

Also Published As

Publication number Publication date
KR101009653B1 (en) 2011-01-19
KR20100045582A (en) 2010-05-04
CN102217103A (en) 2011-10-12
WO2010047482A2 (en) 2010-04-29

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