KR20100062595A - Laser induced thermal imaging apparatus and fabricating method of oled - Google Patents

Abstract

PURPOSE: A laser induced thermal apparatus and an organic electro luminescence display are provided to improve the light emitting property and the life expectancy of a device. CONSTITUTION: A first chamber(CH1) supplies an acceptor substrate and a donor substrate. A second chamber(CH2) comprises an align part loading the acceptor substrate and the donor substrate and a substrate feeder transferring the substrates to a laser projection region. A laser projection part(LR) irradiates laser and transcribes an organic compound formed in the donor substrate to the acceptor substrate.

Description

Laser induced thermal imaging apparatus and fabricating method of OLED

An embodiment of the present invention relates to a laser transfer device and a method of manufacturing an organic light emitting display device using the same.

An organic light emitting display device used in an organic light emitting display device is a self-light emitting device having a light emitting layer formed between two electrodes positioned on a substrate.

The organic light emitting display includes a top emission type, a bottom emission type, or a dual emission type according to a direction in which light is emitted. According to the driving method, it is divided into a passive matrix type and an active matrix type.

In the organic light emitting display device, when a scan signal and a data signal are supplied to a plurality of sub pixels arranged in a matrix form, the selected sub pixel emits light, thereby displaying an image.

The organic light emitting display device constituting the organic light emitting display device is formed by a fine metal mask (FMM) method, an ink spraying method, a laser transfer method (LITI, LIPS), or the like.

Each of the methods listed above presents a technical problem. In the case of the fine metal mask method, there are problems such as the limitation of the mask fabrication technique and the mask sag caused by the mask weight. In the case of the ink spraying method, since the material is a solution, there is a problem in that the process is difficult to proceed. In the case of the LITI transfer method, a donor in the form of a film is required and there is a problem of requiring transfer in an atmospheric pressure state. In the case of the LIPS transfer method, the configuration of the equipment is complicated, the processing time is long, and there is a problem of lowering the vacuum due to the exposure to the atmosphere.

Due to the above problems, the conventional method is required to improve the production of the organic light emitting device is poor in mass productivity or difficult to large area.

Embodiments of the present invention for solving the above problems of the background art, a laser transfer device and the organic light emitting display device using the same that can transfer the organic material to the acceptor substrate in the vacuum state and improve the luminous characteristics and life of the device It is to provide a manufacturing method.

Embodiment of the present invention by the above-described problem solving means, the first chamber for supplying the acceptor substrate and the donor substrate; The alignment unit for loading and aligning the donor substrate provided with the acceptor substrate and the organic material formed from the first chamber on the stage located in the alignment region and the acceptor substrate and the donor substrate aligned on the stage as the laser irradiation region. A second chamber including a substrate transfer part for transferring; And a laser irradiator for irradiating a laser beam so that the organic material formed on the donor substrate is transferred onto the acceptor substrate.

The laser irradiator is positioned outside the second chamber corresponding to the laser irradiation area, and the laser may be irradiated through a window formed in the second chamber.

The laser irradiation unit may include a laser transfer unit for moving in a second axis direction intersecting the first axis, which is a transfer direction of the substrate transfer unit.

The laser irradiation unit may be a line beam laser.

The alignment unit may include a first chuck for loading the acceptor substrate on the stage and a second chuck for loading the donor substrate on the stage.

The alignment unit may include a substrate fixing part for fixing the acceptor substrate and the donor substrate on which the alignment is completed by the first and second chucks.

The first and second chucks may move to a position spaced apart from the stage when the alignment between the acceptor substrate and the donor substrate is completed.

In the acceptor substrate loaded in the second chamber, a transistor and a lower electrode connected to a source or a drain of the transistor may be positioned.

On the other hand, an embodiment of the present invention provides an organic light emitting display device manufactured by any one of claims 1 to 7.

The organic light emitting display device may include a transistor formed on an acceptor substrate, a lower electrode formed on the transistor, an organic light emitting layer formed on the lower electrode, and an upper electrode formed on the organic light emitting layer.

Embodiment of the present invention, there is an effect to provide a laser transfer device configured to transfer the organic material to the acceptor substrate in a vacuum state and to lower the organic thermal transfer temperature. In addition, the embodiment of the present invention is easy to manufacture a large-area device as well as to improve the mass productivity since the transfer of the laser to the acceptor substrate and the donor substrate without using a mask. In addition, the embodiment of the present invention has the effect of reducing the presence of impurities present between the acceptor substrate and the donor substrate. In addition, the embodiment of the present invention has the effect of improving the light emitting characteristics and life of the device.

Hereinafter, with reference to the accompanying drawings, the specific content for the practice of the present invention will be described.

1 is a schematic plan view of a laser transfer apparatus according to an embodiment of the present invention, FIG. 2 is a cross-sectional view of the second chamber shown in FIG. 1, and FIG. 3 is a partial perspective view of FIG. 2.

1 to 3, a laser transfer apparatus according to an exemplary embodiment of the present invention is supplied from a first chamber CH1 and a first chamber CH1 for supplying an acceptor substrate S1 and a donor substrate S2. A transfer area aligning the aligned acceptor substrate S1 and the donor substrate S2 and the aligned acceptor substrate S1 and the donor substrate S2 to the laser irradiation area A2. It includes a two chamber (CH2) and the laser irradiation unit LR for irradiating the laser.

The first chamber CH1 supplies the acceptor substrate S1 and the donor substrate S2 to the second chamber CH2. Here, in the case of the acceptor substrate S1, a transistor, an insulating layer, a lower electrode, and a lower common layer may be used on the substrate, but the present invention is not limited thereto. The donor substrate S2 may be formed of an organic material and a metal material, but is not limited thereto. Here, the donor substrate S2 may be divided into a donor substrate on which an organic material emitting red light is formed, a donor substrate on which an organic material emitting green light is formed, and a donor substrate on which an organic material emitting blue light is formed. Meanwhile, the metal material included in the donor substrate S2 may be formed of the same material as that of the subpixel region and may generate a heat by absorbing a laser of approximately 808 nm, but is not limited thereto.

The second chamber CH2 loads and freezes the acceptor substrate S1 supplied from the first chamber CH1 and the donor substrate S2 on which the organic material is formed on the stage ST located in the alignment area A1. The cut includes a substrate transfer unit STM for transferring the acceptor substrate S1 and the donor substrate S2 aligned on the alignment units C1 and C2 and the stage ST to the laser irradiation area A2. . The second chamber CH2 is a first window W1 positioned in the laser irradiation area A2 so that the laser irradiated from the outside can be easily irradiated to the donor substrate S2 transported in the second chamber CH2. ) May include a second window W2 positioned in the alignment area A1 to facilitate alignment between the acceptor substrate S1 and the donor substrate S2.

The substrate transfer part STM may be located inside or outside the second chamber CH2 and may include a rotation axis AX that is rotated by the driving of the substrate transfer part STM. The substrate transfer part STM may transfer the stage ST from the alignment area A1 to the laser irradiation area A2 by rotating the rotation axis AX in the forward or reverse direction. For example, the substrate transfer part STM may rotate the rotation axis AX to transfer the stage ST at a speed of 100 mm / sec.

The alignment unit may include a first chuck C1 for loading the acceptor substrate S1 on the stage ST and a second chuck C2 for loading the donor substrate S2 on the stage ST. . When the alignment between the acceptor substrate S1 and the donor substrate S2 is completed, the first chuck C1 and the second chuck C2 may move to a position spaced apart from the stage ST. In the case of the first chuck C1 and the second chuck C2, ESC (ELECTROSTATIC CHUCK) may be used, but is not limited thereto. In addition, the alignment part may include a substrate fixing part H for fixing the acceptor substrate S1 and the donor substrate S2 that are aligned by the first chuck C1 and the second chuck C2. . Substrate fixing part (H) serves to fix the shake or warp does not occur in the process of the alignment of the acceptor substrate (S1) and the donor substrate (S2) is completed.

The laser irradiation part LR is positioned outside the second chamber CH2 corresponding to the laser irradiation area A2. Accordingly, the laser irradiated from the laser irradiator LR may be irradiated through the first window W1 formed in the second chamber CH2. The laser irradiation part may be irradiated with a line beam laser having a size of approximately 200 mm x 0.6 mm. The laser irradiator LR may include a laser transfer part LTM that moves in a direction of a second axis x that crosses the first axis y, which is a transfer direction of the substrate transfer part STM. The laser irradiator LR moves in the direction of the second axis x in accordance with the movement of the laser transfer unit LTM, thereby irradiating the laser.

Hereinafter, a driving method of the laser transfer device according to the embodiment of the present invention will be described.

4 to 9 are diagrams for explaining a driving method of the laser transfer device.

First, referring to FIGS. 4 and 5, the acceptor substrate S1 and the donor substrate S2 carried out from the first chamber CH1 are supplied to the second chamber CH2. Then, the first chuck C1 is loaded on the stage ST so that the device portion formed on the acceptor substrate S1 is exposed. The second chuck C2 loads the donor substrate S2 on the stage ST so as to face the acceptor substrate S1. After the loading is completed, alignment between the acceptor substrate S1 and the donor substrate S2 is performed through the second window W2 positioned in the alignment area A1, and the acceptor substrate S1 and the donor substrate are aligned. (S2) is in close contact. At this time, the close acceptor substrate S1 and the donor substrate S2 are fixed by the substrate fixing part H.

 Through this process, when the acceptor substrate S1 and the donor substrate S2 are tightly fixed on the stage ST, the first chuck C1 and the second chuck C2 are spaced apart from the stage ST. Go to. Then, the substrate transfer part STM rotates the rotation axis AX to transfer the stage ST positioned in the alignment area A1 to the laser irradiation area A2.

Next, referring to FIGS. 6 and 7, when the stage ST is transferred to the laser irradiation area A2, the laser irradiation part LR moves in the direction of the second axis x where the laser transfer part LTM moves. Investigate. When the laser is irradiated, the organic material formed on the donor substrate S2 is transferred onto the acceptor substrate S1. Here, the stage ST is gradually moved in the first axis y, which is the transfer direction of the substrate transfer part STM, and the laser irradiation part LR is the second axis x, which is the movement direction of the laser transfer part LTM. The laser is irradiated on the entire area of the donor substrate S2 as if scanned by.

Through this process, when all organic material is transferred to the acceptor substrate S1 loaded on the stage ST, the laser irradiation unit LR finishes the laser irradiation and moves to the original position. In addition, the substrate transfer part STM rotates the rotation axis AX to transfer the stage ST positioned in the laser irradiation area A2 to the alignment area A1.

Next, referring to FIGS. 8 and 9, after finishing the organic material transfer, the stage ST is transferred to the alignment area A1. Then, the substrate fixing part H, which fixes the acceptor substrate S1 and the donor substrate S2, is detached, and the acceptor substrate S1 in which the first chuck C1 and the second chuck C2 are in close contact with each other. ) And the donor substrate (S2). Thereafter, the acceptor substrate S1 and the donor substrate S2 located in the second chamber CH2 are transferred to the first chamber CH1.

4 through 9, the red, green, and blue light emitting layers may be formed in the sub pixel areas defined on the acceptor substrate S1, respectively. After that, the process of forming the upper common layer and the upper electrode may be performed to manufacture the organic light emitting diode.

Hereinafter, a method of manufacturing an organic light emitting display device using a laser transfer device will be described.

10 is a cross-sectional view of an organic light emitting display device using an embodiment of the present invention.

As shown in FIG. 10, a buffer layer 111 is formed on the acceptor substrate 110. The buffer layer 111 may be formed to protect the thin film transistor formed in a subsequent process from impurities such as alkali ions flowing out of the acceptor substrate 110, but may be omitted. The buffer layer 111 may use silicon oxide (SiOx), silicon nitride (SiNx), or the like, but is not limited thereto.

The gate 112 is formed on the buffer layer 111. The gate 112 is selected from the group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It may be made of one or an alloy thereof. In addition, the gate 112 is made of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu). It may be a multilayer formed of any one or an alloy thereof. In addition, the gate 112 may be a bilayer of molybdenum / aluminum-neodymium or molybdenum / aluminum.

The first insulating layer 113 is formed on the gate 112. The first insulating layer 113 may be silicon oxide (SiOx), silicon nitride (SiNx), or multiple layers thereof, but is not limited thereto.

The active layer 114 is formed on the first insulating layer 113. The active layer 114 may include amorphous silicon or polycrystalline silicon crystallized therefrom. Although not illustrated, the active layer 114 may include a channel region, a source region, and a drain region, and the source region and the drain region may be doped with P-type or N-type impurities. In addition, the active layer 114 may include an ohmic contact layer to lower the contact resistance.

Source drains 115a and 115b are formed on the active layer 114. The source drains 115a and 115b may be made of a single layer or multiple layers. In the case of a single layer, the source drains 115a and 115b include molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It may be made of any one or an alloy thereof selected from the group consisting of. Alternatively, in the case of multiple layers, the source drains 115a and 115b may be composed of a double layer of molybdenum / aluminum-neodymium, and a triple layer of molybdenum / aluminum / molybdenum or molybdenum / aluminum-neodymium / molybdenum.

The second insulating layer 116a is formed on the source drains 115a and 115b. The second insulating layer 116a may be silicon oxide (SiOx), silicon nitride (SiNx), or multiple layers thereof, but is not limited thereto. Here, one of the source drains 115a and 115b is disposed on the second insulating layer 116a and is connected to a shield metal 118 for preventing interference between the source drains 115a and 115b. Can be.

A third insulating film 116b is formed on the second insulating film 116a to increase the flatness. The third insulating layer 116b may include an organic material such as polyimide.

As described above, the transistor T formed on the acceptor substrate 110 has a batam gate type as an example. However, the transistor T formed on the acceptor substrate 110 may be formed not only in a batam gate type but also in a top gate type.

A lower electrode 117 connected to the source 115a or the drain 115b is formed on the third insulating layer 116b of the transistor T. The lower electrode 117 may be selected as an anode or a cathode. When the lower electrode 117 is selected as the cathode, the material of the cathode may be formed of any one of aluminum (Al), aluminum alloy (Al alloy), and Almind (AlNd), but is not limited thereto. In addition, when the lower electrode 117 is selected as the cathode, it is advantageous to form a material having a high reflectivity as the material of the cathode.

A bank layer 119 having an opening exposing a portion of the lower electrode 117 is formed on the lower electrode 117. The bank layer 119 may include an organic material such as benzocyclobutene (BCB) resin, acrylic resin, or polyimide resin.

A lower common layer is formed on the lower electrode 117. The lower common layer may include an electron injection layer and an electron transport layer, or may include a hole injection layer and a hole transport layer, depending on a light emitting method.

A light emitting layer is formed on the lower common layer. The light emitting layer is formed using the method described with reference to FIGS. 4 to 9 to emit one of red, green and blue colors depending on the subpixels.

An upper common layer is formed on the light emitting layer. The upper common layer may include a hole transport layer and a hole injection layer, or may include an electron transport layer and an electron injection layer, depending on the light emission method.

The upper electrode 122 is formed on the organic emission layer 121. The upper electrode 122 may be selected as a cathode or an anode. When the upper electrode 122 is selected as the anode, the anode material may be formed of any one of indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), and znO doped al 2 oxide (AZO). However, the present invention is not limited thereto.

Hereinafter, an organic light emitting diode including the organic light emitting layer 121 will be described in more detail with reference to FIG. 11.

11 is a diagram illustrating a hierarchical structure of an organic light emitting display device.

As shown in FIG. 11, the organic light emitting display device includes a lower electrode 117, an electron injection layer 121a, an electron transport layer 121b, a light emitting layer 121c, a hole transport layer 121d, a hole injection layer 121e, and It may include an upper electrode 122.

The electron injection layer 121a serves to facilitate the injection of electrons, and may be Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq or SAlq, but is not limited thereto.

The electron transport layer 121b serves to facilitate the transport of electrons, and may be made of any one or more selected from the group consisting of Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq, and SAlq. However, the present invention is not limited thereto.

The light emitting layer 121c may be formed of red, green, and blue, and may be formed of a material which can be formed on the donor substrate shown in FIGS. 2 to 9 and can be transferred onto the acceptor substrate 110 by a laser. .

The hole transport layer 121d serves to facilitate the transport of holes, NPD (N, N-dinaphthyl-N, N'-diphenyl benzidine), TPD (N, N'-bis- (3-methylphenyl) -N , N'-bis- (phenyl) -benzidine), s-TAD and MTDATA (4,4 ', 4 "-Tris (N-3-methylphenyl-N-phenyl-amino) -triphenylamine) It may be made of one or more, but is not limited thereto.

The hole injection layer 121e may play a role of smoothly injecting holes. CuPc (cupper phthalocyanine), PEDOT (poly (3,4) -ethylenedioxythiophene), PANI (polyaniline), and NPD (N, N-dinaphthyl) -N, N'-diphenyl benzidine) may be composed of any one or more selected from the group consisting of, but is not limited thereto.

Here, the embodiment of the present invention is not limited to FIG. 11, and at least one of the electron injection layer 121a, the electron transport layer 121b, the hole transport layer 121d, and the hole injection layer 121e may be omitted. .

On the other hand, the organic light emitting display device according to the embodiment is susceptible to moisture or oxygen, and thus has a sealing substrate 180 facing the accepting substrate 110 and the acceptor substrate 110 and the sealing substrate 180 as an adhesive member. Can be cemented seal.

The organic light emitting display device manufactured as described above may be manufactured as an organic light emitting display device through a process of connecting the scan driver supplying the scan signal and the data driver supplying the data signal.

Embodiments of the present invention have an effect of providing a laser transfer device configured to transfer an organic material to an acceptor substrate in a vacuum state and lowering the thermal transfer temperature of the organic material, and a method of manufacturing an organic light emitting display device using the same. . In addition, the embodiment of the present invention is easy to manufacture a large-area device as well as to improve the mass productivity since the transfer of the laser to the acceptor substrate and the donor substrate without using a mask. In addition, the embodiment of the present invention has the effect of reducing the presence of impurities present between the acceptor substrate and the donor substrate. In addition, the embodiment of the present invention has the effect of improving the light emitting characteristics and life of the device.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood that the invention may be practiced. Therefore, the embodiments described above are to be understood as illustrative and not restrictive in all aspects. In addition, the scope of the present invention is represented by the claims to be described later rather than the detailed description. Also, it is to be construed that all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts are included in the scope of the present invention.

1 is a schematic plan view of a laser transfer apparatus according to an embodiment of the present invention.

FIG. 2 is a sectional view of the second chamber shown in FIG. 1. FIG.

3 is a partial perspective view of FIG. 2;

4 to 9 are views for explaining a driving method of the laser transfer device.

10 is a cross-sectional view of an organic light emitting display device using an embodiment of the present invention.

11 is a diagram illustrating a hierarchical structure of an organic light emitting display device.

<Explanation of symbols on main parts of the drawings>

CH1: first chamber CH2: second chamber

LR: laser irradiation part LTM: laser transfer part

A1: alignment area A2: laser irradiation area

S1: Acceptor Board S2: Donor Board

C1: first ship C2: second ship

W1: first window W2: second window

STM: Substrate transfer part AX: Rotating shaft

Claims (10)

A first chamber supplying the acceptor substrate and the donor substrate; An alignment unit configured to load and align a donor substrate provided with the acceptor substrate and organic material supplied from the first chamber on a stage positioned in an alignment region, and the acceptor substrate and the donor substrate aligned on the stage; A second chamber including a substrate transfer unit transferring the laser beam to a laser irradiation area; And And a laser irradiation unit for irradiating a laser beam so that the organic material formed on the donor substrate is transferred to the acceptor substrate. The method of claim 1, The laser irradiation unit, Located outside the second chamber corresponding to the laser irradiation area, The laser, And a laser beam irradiated through the window formed in the second chamber. The method of claim 1, The laser irradiation unit, And a laser transfer unit configured to move in a second axis direction intersecting a first axis that is a transfer direction of the substrate transfer unit. The method of claim 1, The laser irradiation unit, A laser transfer device, characterized in that the line beam laser. The method of claim 1, The alignment unit, A first chuck for loading the acceptor substrate onto the stage; And a second chuck for loading the donor substrate onto the stage. The method of claim 5, The alignment unit, And a substrate fixing part for fixing the acceptor substrate and the donor substrate, the alignment of which is completed by the first and second chucks. The method of claim 5, The first chuck and the second chuck, And when the alignment between the acceptor substrate and the donor substrate is completed, the laser transfer device moves to a position spaced apart from the stage. The method of claim 1, The acceptor substrate loaded in the second chamber, And a lower electrode connected to a transistor and a source or a drain of the transistor. The method of manufacturing an organic light emitting display device according to any one of claims 1 to 7, wherein the organic light emitting display device is manufactured. 10. The method of claim 9, The organic light emitting display device, A transistor formed on the acceptor substrate, A lower electrode formed on the transistor; An organic light emitting layer formed on the lower electrode; A manufacturing method of an organic light emitting display device comprising an upper electrode formed on the organic light emitting layer.

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