CN112272966B - Transfer device, method of use and adjustment method - Google Patents
Transfer device, method of use and adjustment method Download PDFInfo
- Publication number
- CN112272966B CN112272966B CN201880094255.5A CN201880094255A CN112272966B CN 112272966 B CN112272966 B CN 112272966B CN 201880094255 A CN201880094255 A CN 201880094255A CN 112272966 B CN112272966 B CN 112272966B
- Authority
- CN
- China
- Prior art keywords
- axis
- donor
- stage
- substrate
- transfer device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000012546 transfer Methods 0.000 title claims abstract description 107
- 238000000034 method Methods 0.000 title claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 214
- 230000003287 optical effect Effects 0.000 claims abstract description 97
- 230000007246 mechanism Effects 0.000 claims abstract description 48
- 238000007493 shaping process Methods 0.000 claims abstract description 24
- 230000033001 locomotion Effects 0.000 claims description 32
- 238000009826 distribution Methods 0.000 claims description 12
- 238000012937 correction Methods 0.000 claims description 10
- 238000005452 bending Methods 0.000 claims description 7
- 230000010355 oscillation Effects 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 238000005259 measurement Methods 0.000 claims description 4
- 238000009827 uniform distribution Methods 0.000 claims description 2
- 230000005856 abnormality Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 20
- 239000004575 stone Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 9
- 238000005401 electroluminescence Methods 0.000 description 8
- 238000003384 imaging method Methods 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 4
- 238000003491 array Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000010438 granite Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 230000001360 synchronised effect Effects 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000011900 installation process Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
Abstract
The invention provides a transfer device, a use method and an adjustment method. The large-scale, fine-scale and short takt time of the receptor substrate of the transfer device are realized while maintaining high transfer position accuracy. In a mechanism in which each stage group moving in a state where a donor substrate and/or a beam shaping optical system for holding a transfer object and a reduction projection optical system are held, and a stage group for holding an acceptor substrate as a transfer object are constructed on separate stages, an abnormality in vibration generated in association with relative scanning of each substrate with respect to a laser beam and in synchronization positional accuracy of the stages for carrying out the scanning is minimized.
Description
Technical Field
The present invention relates to an apparatus for transferring an object on a donor substrate onto an acceptor substrate with high precision using laser irradiation (LIFT: laser Induced Forward Transfer laser-induced forward transfer).
Background
Conventionally, there is a technology of irradiating an organic EL (electro luminescence) layer on a donor substrate with laser light and transferring the irradiated layer onto an opposed circuit substrate. As this technique, patent document 1 discloses a technique of: a plurality of rectangular lasers having a uniform intensity distribution and having a rectangular shape are converted into a plurality of rectangular lasers, the rectangular lasers are arranged in series at equal intervals, a predetermined region of a donor substrate is irradiated with the rectangular lasers at intervals of a predetermined time or more and overlapped a predetermined number of times, the laser is absorbed by a metal foil between the donor substrate and an organic EL layer to generate a linear wave, and the organic EL layer peeled off by the linear wave is transferred to an opposite circuit substrate.
The following structure is used in this technique: a spacer having a proper value of 80-100 [ mu ] m is sandwiched between a donor substrate and a circuit substrate, and a member which holds the distance between the donor substrate and the circuit substrate in a fixed state and is integrated is placed on a stage and scanned with respect to a laser beam. However, in this case, in addition to the step of integrating the opposed donor substrate and the circuit substrate, a donor substrate having the same size as the circuit substrate is required, and along with the need for the circuit substrate to be large-sized, the manufacturing cost and the device to be large-sized are required to be increased.
Similarly, as a technique for transferring an organic EL layer on a donor substrate to an opposing circuit substrate, patent document 2 discloses the following technique: the light absorbing layer is provided between the donor substrate and the organic EL layer, and the light absorbing layer absorbs the irradiated laser light to generate a shock wave, and the organic EL layer on the donor substrate is transferred to a circuit substrate which is provided with a gap of 10 to 100[ mu ] m and faces the donor substrate. However, patent document 2 does not disclose a scanning method of laser light and a stage structure for realizing the same, nor does it disclose a transfer device. Therefore, patent document 2 cannot be referred to as a technique for maintaining and improving the accuracy of the transfer position that can be associated with the increase in size of the circuit board.
Further, patent document 3 discloses a technique related to a step-and-scan method in an exposure apparatus for manufacturing a semiconductor device. The basic considerations are as follows: a row of irradiation regions along the scanning exposure direction of the wafer stage is intermittently exposed while skipping a few irradiation regions in the middle, and the wafer stage is not stopped in the middle. That is, patent document 3 discloses an exposure apparatus, it comprises the following steps: a middle mask stage for holding a middle mask; a wafer stage for holding a wafer; and a projection optical system for projecting the pattern of the intermediate mask onto the wafer, exposing the intermediate mask stage and the wafer stage together with scanning the intermediate mask stage with respect to the projection optical system, and sequentially projecting the pattern of the intermediate mask onto a plurality of irradiation regions of the wafer, wherein the plurality of irradiation regions on the wafer arranged in the scanning direction are intermittently exposed while the wafer stage is not stationary and is scanned. Accordingly, in the demand for an increase in the size of the wafer and an increase in the processing speed, the influence of vibration and wobble generated by scanning of the stage on the exposure accuracy can be reduced as compared with a step and repeat (step) system in which acceleration and deceleration of the wafer stage are repeated.
However, the technique disclosed in patent document 3 is a technique of a semiconductor exposure apparatus based on reduced projection exposure, and the technical field is different from the transfer technique of the present invention. That is, the structure and scanning technique of the reticle stage and wafer stage of the exposure apparatus are completely different from those of the present invention, which is used to reduce the object projected onto the donor substrate with high positional accuracy by the mask pattern of the present invention, and to transfer the object onto the acceptor substrate with the same high positional accuracy. Therefore, the specific stage structure and scanning technique according to the present invention cannot be referred to the technique disclosed in patent document 3.
Prior art literature
Patent document 1: japanese patent laid-open publication Japanese patent laid-open No. 2014-67671
Patent document 2: japanese patent laid-open publication No. 2010-40380
Patent document 3: japanese patent laid-open publication No. 2000-21702
Disclosure of Invention
The two stages of the donor stage holding the donor substrate and the optical stage holding the optical system placed on the donor stage and the acceptor stage holding the acceptor substrate are configured as independent mechanisms, and the optical stages are not placed directly on the donor stage but are configured as independent stages provided on the stages having high rigidity, respectively, whereby the influence of vibration and various errors generated by scanning of the respective stages on the synchronization position accuracy between the stages is minimized. As a result, an object of the present invention is to provide a transfer device that contributes to an increase in size, refinement, and shortening of tact time of a receptor substrate while maintaining accuracy of transfer positions.
A first aspect of the present invention is a transfer apparatus that selectively peels an object on a surface of a moving donor substrate by irradiating the object with a pulsed laser from a back surface of the donor substrate and transfers the object onto a acceptor substrate that moves along an opposite side to the donor substrate, the transfer apparatus including: a pulsed laser device; a telescope for converting the pulse laser beam emitted from the laser device into parallel light; a shaping optical system for shaping the spatial intensity distribution of the pulse laser passing through the telescope into uniform distribution; a mask for passing the pulse laser beam shaped by the shaping optical system in a predetermined pattern; a field lens located between the shaping optical system and the mask; a projection lens for reducing and projecting the pulse laser light having passed through the pattern of the mask on the surface of the donor substrate; a mask table for holding the field lens and the mask; an optical stage holding the shaping optical system, the mask stage, and the projection lens; a donor's station, which is used to receive the donor, holding the donor substrate with an orientation such that a back surface of the donor substrate becomes an incident side of the pulse laser; a receptor stage holding the receptor substrate; and a programmable multi-axis control device having a trigger output function and a stage control function for the pulse laser oscillation, wherein the acceptor stage has a Y axis when a horizontal plane is an XY plane, a Z axis in a vertical direction, and a θ axis in the XY plane, the donor stage has an X axis, a Y axis, and a θ axis, the projection lens is held on the optical stage together with the Z-axis stage for the projection lens, the telescope, the shaping optical system, the field lens, the mask, and the projection lens form a reduced projection optical system that reduces and projects a pattern of the mask on a surface of the donor substrate, the X axis of the donor stage is provided on a first stage, the Y axis of the acceptor stage is provided on a second stage different from the first stage, and the Y axis of the donor stage is suspended and provided on the X axis of the donor stage.
Here, "moving" substrates include a case where the pulsed laser (denoted by "LS" in fig. 1A, but fig. 1A includes a structural part common to the structure of the first invention although the main structural part is shown in fig. 1A), and the movement is not stopped at the time of irradiation, and a case where the movement and the stopping are repeated at the time of irradiation of the pulsed laser, and the above-described cases are selected according to the transfer process performed by the transfer apparatus of the present invention, the required tact time, and the like. Further, the present invention includes a structure in which the donor substrate (D) is repeatedly moved and stopped and the acceptor substrate (R) is not stopped, and a structure in which the movement and the stop are reversed. When only one irradiation is used for peeling the object from the donor substrate and a high takt time is required, it is appropriate to select a structure in which the donor substrate and the acceptor substrate move at the same or different speeds without stopping. On the other hand, when an object is to be stacked to a certain thickness, a structure may be selected in which the donor substrate is not stopped and the acceptor substrate is stopped for a certain number of shots.
The "object" is not particularly limited, and is a transfer object provided on the donor substrate or provided on the donor substrate in one piece via a light absorbing layer (not shown in fig. 1A), and includes a thin film typified by an organic EL layer described in the above patent document and a plurality of objects which are arranged in a minute unit shape and regularly. In addition, the mechanism of transfer includes the following cases: the light absorbing layer irradiated with the laser light generates a shock wave, whereby the object is peeled off from the donor substrate and transferred toward the acceptor substrate; peeling by laser light directly irradiated to the object without the light absorbing layer; however, the present invention is not limited to these cases.
The donor substrate may be a material having a transmission characteristic for the wavelength of the laser beam, and preferably a material having a small bending amount due to an increase in the size of the substrate. In addition, when the bending amount is large enough to not satisfy the uniformity of the gap between the donor substrate and the acceptor substrate, the method for holding the donor substrate of the donor stage (Yd, θd) is, for example, the following method: mechanical correction is performed by providing an adsorption region or the like near the center of the donor substrate; in addition, correction is performed using a gap sensor formed by a combination of height sensors described later.
In the present invention, in order to transfer an object located near the edge of a donor substrate to a receptor substrate, the movable range of the donor stage includes an XY plane area where the donor substrate should move, and refers to a range depending on the size of the receptor substrate. As an example, when the dimensions in the XY plane of the donor substrate are 200X 200 mm and the same acceptor substrate is 400X 400 mm, the predetermined range in which the donor stage (Xd, yd) should be moved is approximately 800X 800 mm. Fig. 4 shows this situation. In addition, this region is also included in the case where further movement is required for removing the donor substrate.
The material of the "stage" is not particularly limited, but is necessarily a material having extremely high rigidity. In order to make the stage 1 (first stage) (G1) rigid, a shape of "コ" or "ζ" in plan view is desirable. In fig. 1A, the stage 2 (second stage) is shown as one stage, but specifically, the following configuration may be adopted: the platform is taken as two platforms arranged along the Y-axis direction, and a linear scale and a linear motor are arranged in the middle of the two platforms. In addition, the platform 1 and the platform 2 may be a structure fixed to the same base platform (G). Further, G1 may be constituted by a combination of the stage 11 (G11) and the stage 12 (G12).
In addition, any material of the platform needs to be a member with high rigidity such as steel, stone, or ceramic material. For example, the stone material may be a stone material represented by granite (granite), but is not limited thereto. In addition, all of the platforms need not be constructed of the same material.
In the embodiments described below, the movement of each stage will be described in detail, but the following operations are generally performed. First, the X axis (Xd) of the donor table is set on G1 in a state in which the Y axis (Yd) of the donor table is suspended, and is moved in the X axis direction. In addition, the movement changes the relative position along the X-axis between the donor substrate and the acceptor substrate. Fig. 1B shows a case of movement. In any of the drawings, detailed structures of the movable table of the table, the linear guide, and the like are not shown.
The method of setting the optical table (Xo) on the stage or the like is not limited, and various mechanisms may be selected, for example, a state of being set on the Xd, a state of being set on the same stage as the stage on which the Xd is set, or a state of being set on a stage different from the Xd. Xo and Xd are parallel and moved in the X-axis direction, and the respective relative positions of the shaping optical system (H), the field lens (F), the mask (M) and the projection lens (Pl) are not changed, so that they are integrally moved. On the other hand, movement of Xo along the X-axis changes the relative positional relationship between the donor substrate and the projection lens. Fig. 1C shows the case of this movement.
In addition, in the case where it is not necessary to change the relative position of the donor substrate and the projection lens in the X-axis direction, the structure may be one in which the optical stage is omitted, and all of the homogenizer (homogenizer), the field lens, the mask, and the projection lens are disposed on the X-axis of the donor stage or fixed on another stage.
The mask is held on a mask stage having at least a W axis that moves in the X axis direction together with the field lens, and may further preferably have: a U-axis in the Y-axis direction, a V-axis moving in the Z-axis direction, an R-axis as a rotation axis in the YZ plane, a TV-axis adjusting the inclination with respect to the V-axis, and a TU-axis adjusting the inclination with respect to the U-axis. In order to suppress the injection of heat generated by the laser beam irradiation to the mask, an aperture mask having a pattern larger than the mask pattern by one turn may be provided on the front side of the mask, and the aperture mask may be configured to have a double-mask structure in cooperation with the mask.
The Y axis (Yd) of the donor stage and the Y axis (Yr) of the acceptor stage move at the same or different speeds in a state where the gap between the donor substrate and the acceptor substrate in the transfer step is kept constant and extremely high parallelism is maintained. Further, according to the above-described configuration of the moving method of each stage group and the stage or the like for supporting them, by limiting the moving mechanism of the acceptor substrate to the Y axis and separating from the moving mechanism of the donor substrate, the mutual influence due to the disturbance and vibration of the moving regions of the substrates can be suppressed, and the size of the acceptor substrate can be made large and fine.
The second invention is that, in addition to the first invention, the X axis of the donor stage is placed on the stage 1, and the optical stage is placed on the X axis of the donor stage.
Fig. 1A shows a main structural part (side view) of the transfer device of the second invention. Fig. 1B shows a case where Xd is placed on Xo and moved from the state of fig. 1A (side view). Fig. 1C shows a case where Xo moves on Xd from the state of fig. 1B (side view). Fig. 1D shows the top view of fig. 1C.
A third invention is the above-described first invention, wherein the optical stage is placed on the stage 1, and the X-axis of the donor stage is suspended from the stage 1.
Fig. 2A shows a main structural part (side view) of the transfer device of the third invention. Fig. 2B shows a case where Xd and Xo are moved the same distance on G1 (Xd is suspended from G1) from the state of fig. 2A (side view). Fig. 2C shows a case (side view) where only Xo moves on G1 from the state of fig. 2B.
The fourth invention is that, on the basis of the first invention, the X-axis of the donor stage is mounted on the stage 1, and the optical stage is placed on a stage 3 (third stage) different from both the stage 1 and the stage 2.
Here, "disposed on the platform 1" includes a state of being placed on the platform 1 and a state of being suspended from the platform 1, but is not limited to these states.
A fifth aspect of the present invention is the first aspect of the present invention, wherein a rotation adjustment mechanism for fine-adjusting a setting angle in an XY plane between the X axis of the donor table and the stage 1 is provided between the X axis of the donor table and the Y axis of the donor table.
Here, fig. 3A shows an example of a rotation adjustment mechanism (RP) provided between the X-axis (Xd) of the donor stage and the stage 1 (G1). In fig. 3A, the left side view shows a top view, and the right side view shows a side view from the X-axis direction. In addition, in a plan view, a row of holes located on the outside is used for fixation with G1, and has "play" (margin, allowance) for having a rotation adjusting function. In a plan view, the two inner rows of holes are holes through which screws for fixing the linear guides RP and Xd pass. In addition, the side having the "play" may be used as the hole for the linear guide of the Xd, but when two linear guides are fixed independently and in parallel, there is a possibility that the difficulty of the installation process increases.
On the other hand, fig. 3B shows an example of RP provided between Xd and Y axis (Yd) of the donor stage suspended from Xd. In top view, the two rows of holes located on the outside are used for fixation with Xd and have "play" for the purpose of having a rotation adjustment function. Further, two rows of holes arranged in the Y-axis direction are used for fixation with Yd.
Further, as the RP provided between G1 and Xd, an RP different from the foregoing RP may be used. For example, a fulcrum (rotation axis in the Z-axis direction) for rotationally adjusting the RP on which Xd is placed in the XY plane with respect to G1 (not shown) is provided on the contact surface between the RP and G1, and a force point with respect to the fulcrum is provided on a side surface (vertical surface) of the RP sufficiently distant from the fulcrum. A large screw pushed horizontally toward the force point is provided on G1 near the force point. Similarly, a large screw is provided on the opposite side of the RP. This makes it possible to rotate the RP on which Xd is placed in the XY plane on the order of [ μrad ] with respect to G1 about the fulcrum.
A sixth aspect of the present invention is the image forming apparatus according to the second aspect of the present invention, wherein a rotation adjustment mechanism for fine-adjusting a setting angle in an XY plane between the X axis of the donor table and the stage 1 is provided between the X axis of the donor table and the stage, a rotation adjustment mechanism for fine-adjusting a setting angle in an XY plane between the X axis of the donor table and the stage is provided between the X axis of the donor table and the Y axis of the donor table, and a rotation adjustment mechanism for fine-adjusting a setting angle in an XY plane between the X axis of the donor table and the stage is provided between the X axis of the donor table and the Y axis of the donor table.
As the RP, for example, an RP between G1 and Xd shown in fig. 3A described above, an RP between Xd and Xo shown in fig. 3C, and an RP between Xd and Yd shown in fig. 3B can be used.
A seventh aspect of the present invention is the apparatus according to the third aspect of the present invention, wherein a rotation adjustment mechanism for fine-adjusting a setting angle in an XY plane between the X axis of the donor table and the stage 1 is provided between the optical table and the stage 1, and a rotation adjustment mechanism for fine-adjusting a setting angle in an XY plane between the X axis of the donor table and the Y axis of the donor table is provided between the X axis of the donor table and the Y axis of the donor table.
Here, for example, RP shown in fig. 3A is used as the rotation adjustment mechanism between Xo and G1 and between Xd and G1, respectively, and RP shown in fig. 3B is used as the rotation adjustment mechanism between Xd and Yd. The former RP has holes through which the screws for fixing the linear guides Xo and Xd pass, and the setting angles in the XY plane on which the respective linear guides RP and G1 are fixed are adjusted using the "play" of the holes.
An eighth aspect of the present invention is the image forming apparatus according to the fourth aspect of the present invention, wherein a rotation adjustment mechanism for fine-adjusting a setting angle in an XY plane between the X axis of the donor table and the stage 1 is provided between the optical table and the stage 3, and a rotation adjustment mechanism for fine-adjusting a setting angle in an XY plane between the X axis of the donor table and the Y axis of the donor table is provided between the X axis of the donor table and the Y axis of the donor table.
A ninth invention is the laser device according to any one of the first to eighth inventions, wherein the laser device is an excimer laser.
The oscillation wavelength of the excimer laser is mainly 193 nm, 248 nm, 308 nm or 351 nm, and is appropriately selected from the materials of the light absorption layer and the light absorption characteristics of the object.
A tenth aspect of the present invention is the transfer device according to the ninth aspect, wherein the transfer device includes a pulse shutter that cuts off an arbitrary pulse train of laser pulses emitted from the excimer laser.
It is known that a pulsed laser device receives a trigger signal from the programmable multi-axis control device and starts to oscillate, but the energy of the pulse after a certain number of oscillations or a certain time is not stable to such an extent that it cannot be used due to the application. Thus, in order to exclude the unstable pulse group, the pulse group needs to be excluded by a mechanical shutter operation. Specifically, for example, in the case of an excimer laser that oscillates at 1[ khz ], a time window between adjacent laser pulses is about 1[ ms ], and a high-speed shutter function capable of moving (traversing) a certain distance in this time is required. The predetermined distance depends on the space size of the laser beam at the place where the shutter is operated, and if the distance is 5 mm, the required shutter operation speed is 5[m/s, and an ultra-high-speed shutter for moving the optical element into and out of the optical path using a voice coil or the like is required. In addition, even if the size of the space is reduced by a forming optical system or the like, the distance traversed by the shutter member can be shortened, and the shutter member is easily damaged by the energy density of the laser light.
An eleventh aspect of the present invention is the programmable multi-axis control device according to the tenth aspect, wherein the programmable multi-axis control device has a function of simultaneously controlling at least the Y axis of the acceptor station and the Y axis of the donor station, and further includes a device for correcting the movement position error by using two-dimensional distribution correction value data prepared in advance for correcting the movement position error of the station.
For example, the position correction of the acceptor substrate and the donor substrate at the time of laser irradiation is performed using two-dimensional distribution correction value data information in the simulated XY plane of either Xd or Xo in combination with either Yr or Yd. The main causes of the corrected positional errors include pitch (pitching), yaw (rolling), and roll (rolling) accompanying the movement of each stage, but are not limited thereto. The parameter for determining the correction value includes the moving speeds of Yr and Yd and the ratio thereof, in addition to the positional information of each stage.
A twelfth invention is the above-described optical device, wherein the high-magnification camera that monitors the position of the donor substrate is provided on the Z axis of the acceptor station, or the high-magnification camera that monitors the position of the acceptor substrate is provided on the X axis of the donor station or a portion that moves together with the X axis of the donor station, or on the optical station or a portion that moves together with the optical station.
Here, the "portion moving along with the X axis of the donor table" also includes Yd suspended from Xd. In the present invention, the parallelism between the Y-axes and the parallelism between the X-axes of the respective stages and the verticality between the Y-axes and the X-axes of the respective stages are important parameters for the accuracy of the shift position. In the inspection of parallelism and verticality at the time of assembling each stage, the amount of deviation in the direction perpendicular thereto is monitored by using a high-magnification, high-resolution camera with respect to the moving distance of each stage holding the alignment substrate, and the verticality is adjusted by using the rotation adjustment mechanism. In the adjustment of the parallelism between Yr and Yd, the two stages are moved (in parallel) by the same distance in synchronization, and the position of the alignment mark image (cross mark or the like) subjected to pattern matching attached to the opposite stage is observed by the high magnification camera attached to one stage to be stationary without being moved. In this case, the movement in the Y axis direction indicates abnormal synchronization of Yd and Yr, and the movement in the X axis direction indicates erroneous adjustment of parallelism of Yd and Yr.
In addition, a CCD camera is generally used as a high-magnification camera. The magnification and the like depend on the transfer position accuracy, but as an example, when detecting the amount of deviation of the order of [ mu rad ], that is, when detecting the amount of deviation of 1[ mu ] m with respect to the stage moving distance of 1[m, a camera having a resolution of 1[ mu ] m and a magnification of 20 to 50 times may be used
A thirteenth invention is the donor station and the acceptor station according to the twelfth invention, wherein the gap sensor measures a gap between a surface (lower surface) of the donor substrate and a surface of the acceptor substrate.
Here, the gap sensor is a sensor in which height sensors provided on the donor and acceptor platforms are combined, the height sensor provided on the donor platform measures a distance to the acceptor substrate, the height sensor provided on the acceptor platform measures a distance to the donor substrate, and a gap between the donor substrate and the acceptor substrate is calculated from the two measured values and height information of the height sensor.
A fourteenth aspect of the present invention is the thirteenth aspect of the present invention, wherein the Y-axis of the acceptor station and the Y-axis of the donor station, each including a position measurement device using a laser interferometer.
As a structure of the laser interferometer for the Y axis (Yr) of the receptor stage, a structure including the following components can be used: a reflecting mirror (Ic) held on a portion that moves together with Yr; an Interferometer Laser (IL) fixed to a stage such as the stage 2 (G2) which is not easily affected by vibration or the like caused by the movement; and a 1/4 wavelength plate (not shown). Further, as the reflecting mirror, a three-axis pyramid prism (retro-reflector) is suitably used, and it is preferable to be as close to the position (height) of the receptor substrate as possible. Fig. 5A shows an outline (illustration of Z axis and θ axis of the donor sheet group and the acceptor sheet are omitted).
Based on the positional information from the linear encoder, yr is controlled by a programmable multi-axis control device, and the laser interferometer is used for correction as the linear encoder and correction when the gear ratio thereof is finely adjusted in gear mode operation of Yr and Yd described later.
As a structure of the laser interferometer for the Y axis (Yd) of the donor stage, a structure including: ic, held on a surface moving together with Yd suspended from Xd; IL, fixed to Xd in the same manner; and a 1/4 wavelength plate (not shown). Here, as the reflecting mirror, a three-axis pyramid prism (retroreflector) is suitably used, and it is preferable to be located as close to the position (height) of the donor substrate as possible. An overview is represented by fig. 5B. (the receptor block is not shown), and the detection method of the laser beam for any one interferometer may be selected by selecting the most suitable method according to the required accuracy of the transfer position.
A fifteenth invention is the transfer device according to the fourteenth invention, wherein the transfer device includes a confocal beam profiler having a focal plane at a position conjugate to a position at which the pattern of the mask is demagnified projected and imaged by the projection lens.
The confocal beam profiler can monitor the state of the spatial intensity distribution and the position of the laser beam projected onto the surface of the donor substrate in real time with accuracy equivalent to the imaging resolution of the reduction imaging optical system.
A sixteenth invention is a method for using the transfer device according to the thirteenth invention, wherein the gap sensor is used to measure in advance the bending amount of the donor substrate together with XY position information of the donor substrate, and the gap between the donor substrate and the acceptor substrate is corrected while using adjustment performed by the Z axis (Zr) of the acceptor stage or the Z axis stage of the projection lens based on two-dimensional distribution data of the bending amount obtained by the measurement.
A seventeenth aspect of the present invention is the transfer device according to any one of the fifth to eighth aspects, wherein the transfer device is a method for adjusting parallelism between the Y axis of the acceptor base and the Y axis of the donor base in the step of assembling the transfer device, wherein the transfer device is adjusted in accordance with the Y axis of the acceptor base, which is adjusted in linearity together with the Z axis and the θ axis of the acceptor base, and the transfer device includes the steps of, in order: adjusting the perpendicularity between the Y axis of the acceptor station and the X axis of the donor station by a rotation adjusting mechanism positioned between the first stage and the X axis of the donor station; synchronizing and advancing the Y-axis of the donor table and the Y-axis of the acceptor table suspended from the X-axis of the donor table with the verticality adjusted, and observing an alignment mark on the Y-axis of the opposing donor table by a high magnification camera mounted on a position moving together with the Y-axis of the acceptor table; and adjusting parallelism of the Y-axis of the acceptor station and the Y-axis of the donor station by a rotation adjustment mechanism between the X-axis of the donor station and the Y-axis of the donor station based on the observation result.
In order to accurately confirm and adjust the parallelism between Yd and Yr, it is preferable that the high magnification camera is mounted on a portion having high rigidity, at the highest position among the respective stages and boards placed on Yr.
The invention can realize the enlargement of the receptor substrate of the transfer device and shorten the takt time while maintaining high transfer position precision on the basis of high synchronous position precision of the donor substrate and the receptor substrate.
Drawings
Fig. 1A shows a main structural part (side view) of the transfer device of the present invention. (second invention)
Fig. 1B shows a state (side view) in which the X-axis of the donor table is moved from the state of fig. 1A while the upper optical table is placed.
Fig. 1C shows a case where the optical stage is moved on the X axis of the donor stage from the state of fig. 1B (side view).
Fig. 1D is a top view of fig. 1C.
Fig. 2A shows a main structural part (side view) of the transfer device of the present invention. (third invention)
Fig. 2B shows a case where the X-axis of the donor stage and the optical stage are moved by the same distance on the stage 1 from the state of fig. 2A (side view).
Fig. 2C shows a case (side view) where only the X-axis of the optical table is moved on the stage 1 from the state of fig. 2B.
Fig. 3A shows an example of a rotation adjustment mechanism for use between G1 and Xd.
Fig. 3B shows an example of a rotation adjustment mechanism for use between Xd and Yd.
Fig. 3C shows an example of a rotation adjustment mechanism for use between Xd and Xo.
Fig. 4 shows the range in which the donor stage should move according to the size of the acceptor substrate.
Fig. 5A shows a case of a Y-axis laser interferometer provided with a receptor stage.
Fig. 5B shows a case of a Y-axis laser interferometer provided with a donor stage.
Fig. 6 shows an example of a pattern formed on a mask.
Fig. 7 shows a case of a transfer process using a plurality of mask patterns.
Fig. 8 shows the case of monitoring of the confocal beam profiler.
Fig. 9A shows the first irradiation of the transfer step.
Fig. 9B shows a second irradiation of the transfer process.
Fig. 9C shows the third irradiation of the transfer step.
Fig. 10 shows a gear ratio 1:2 the receptor substrate after one scan.
Fig. 11 shows a case of step-and-scan of the X-axis of the donor table.
Fig. 12 shows a synchronization position error in the Y-axis of the acceptor station and the Y-axis of the donor station.
Fig. 13A shows a first irradiation in a transfer process using a matrix-like donor substrate.
Fig. 13B shows a second irradiation of the transfer process using a matrix-like donor substrate.
Fig. 13C shows the third irradiation in the transfer process using the matrix-like donor substrate.
Description of the reference numerals
Substrate for adjusting AD donor stage
For AR receptor tables substrate for adjustment
BP confocal beam profiler
CCD high-magnification camera
D donor substrate
F field lens
G foundation platform
G1 Platform 1
G11 Platform 11
G12 Platform 12
G2 Platform 2
G3 Platform 3
H-shaped optical system
Pyramid prism for Ic laser interferometer
Laser for IL laser interferometer
LS laser
M mask
Pl projection lens
R receptor substrate
RP rotation adjusting mechanism
S object
TE telescope
X-axis of Xd donor table
Xo optical bench (X axis)
Y-axis of Yd donor station
Switching table of Yl projection lens and camera
Y-axis of Yr receptor table
Z-axis table of Zl projection lens
Z-axis of Zr acceptor station
Theta axis of thetad donor stage
Theta axis of thetar receptor block
Detailed Description
The specific configuration of the transfer device of the present invention will be described in detail with reference to the drawings.
Example 1
In this embodiment 1, the following embodiment is shown: a layered (solid film) object formed in one piece with a light absorbing layer interposed therebetween is transferred onto a 400X 400[ mm ] acceptor substrate in a manner of a total of 144 million matrices of 12000X 12000 as a unit-shaped transfer object of 10X 10[ mu ] m each on a donor substrate of 200X 200[ mm ] in size. The 144 million transfer positions are positioned with a precision of + -1 [ mu ] m, and the distance between the longitudinal and transverse directions is 30[ mu ] m.
First, fig. 1A shows the main structural parts of a transfer device related to the implementation of the present invention. In fig. 1A, the laser device, the control device, and other monitors are omitted, and X-axis, Y-axis, and Z-axis directions are shown. The stage 1 (G1), the stage 11 (G11), the stage 12 (G12) and the stage 2 (G2) are all stone stages using granite. In addition, the base platform (G) uses iron with high rigidity. In this embodiment, the configuration of the sixth invention is based on the above.
The configuration of the transfer apparatus according to embodiment 1 of the present invention will be described in order of the transfer sequence of the laser beam from the laser apparatus to the object on the donor substrate. First, the laser device used in this example 1 is an excimer laser having an oscillation wavelength of 248 nm. The spatial distribution of the emitted laser light is about 8×24[ mm ], and the beam divergence angle is 1×3[ mrad ]. The above is (vertical×horizontal) description, and the numerical value is FWHM.
In addition, although there are various types of excimer lasers, depending on the output, the repetition frequency, the beam size, the beam divergence angle, and the like, there are excimer lasers in which the emitted laser light has a longitudinal length (the longitudinal direction and the transverse direction are reversed), there are various types of excimer lasers that can be used in the present embodiment 1 by adding, omitting, or changing the design of the optical system. The laser device is generally provided on a base (laser stage) different from the base of the stage group on which the transfer device is provided, although the size of the laser device depends on the size.
The outgoing light from the excimer laser enters the telescope optical system and is transmitted to the shaping optical system in front of it. Here, as shown in fig. 1A, the shaping optical system is held on an optical stage (Xo) provided on an X-axis (Xd) of a donor stage that moves a donor substrate so that an optical axis is along the X-axis. In addition, in the case of the optical fiber, the laser beam immediately before entering the shaping optical system is adjusted by the telescope optical system so as to be substantially parallel to each other at any position within the X-axis movement range of the donor stage. Therefore, the laser light always enters the shaping optical system at substantially the same size and the same angle (vertically) regardless of the movement in the X-axis direction of Xd and/or Xo. In this example 1, the dimensions were about 25X 25[ mm ] (longitudinal X transverse).
The shaping optical system (H) of this embodiment 1 combines two groups of uniaxial cylindrical lens arrays into two groups of right angles in a plane perpendicular to the optical axis direction. It is configured to: the lens arrays of the front stage in each group are imaged on the mask (M) by the lens arrays of the rear stage and the condenser lens (not shown) located behind the lens arrays.
The laser light having passed through the shaping optical system is incident on the mask through a field lens (F) constituting an image-side telecentric reduction projection optical system in combination with the projection lens (Pl). The size of the laser beam on the mask is 1×50[ mm ] (FWHM), and the size of the region whose spatial intensity distribution uniformity is within + -5% is maintained at 0.5×45[ mm ] or more.
The mask is fixed on the mask stage, and as described above, the mask stage has a total six-axis adjusting mechanism, and the six axes are: a W axis moving along the X axis direction together with the field lens, a U axis in the Y axis direction, a V axis moving along the Z axis direction, an R axis as a rotation axis in the YZ plane, a TV axis adjusting an inclination with respect to the V axis, and a TU axis adjusting an inclination with respect to the U axis.
The mask of this example 1 used a mask in which a pattern was drawn (formed) on a synthetic quartz plate by chrome plating. Fig. 6 shows a schematic diagram thereof. In this mask, a window portion (a) which is not chrome-plated and is indicated as white is transmitted through the laser light, and a colored portion (b) which is chrome-plated is shielded from the laser light. The shape (a) of one window is 50X 50[ mu ] m, and 300 windows are arranged in total at intervals of 43.85[ mu ] mm continuously at intervals of 150[ mu ] m along the X-axis direction (one row). The surface on which the chromium plating is performed is the laser light emission side, and the reflection preventing film for 248 nm is provided on the light emission side. Further, instead of chrome plating, aluminum vapor deposition or dielectric multilayer films may be used.
In addition, when a transfer process using a plurality of patterns is switched to one mask, if the laser beam irradiated from the shaping optical system onto the mask is within a range of a size of the laser beam and within a movable range of the mask stage, a mask on which a different pattern is drawn may be used.
In fig. 7, when a transfer process or the like for scanning the donor substrate (D) at the same speed a plurality of times or back and forth is used during one scanning of the acceptor substrate (R) (including a halfway stop), the mask pattern shown in fig. 6 may be a plurality of lines (but laser irradiation is intermittently and selectively performed in the mask pattern; a matrix shown as 3×2 lines in fig. 7). Thus, a donor substrate having a smaller size than the acceptor substrate can be used.
The laser light having passed through the mask pattern is changed in its transmission direction to be directed downward (-Z direction) by an epi-lens and is incident on a projection lens. The projection lens is provided with an antireflection film for 248nm, and has a reduction magnification of 1/5. Details are shown in table 1 below.
TABLE 1
The laser beam emitted from the projection lens is incident from the rear surface of the donor substrate, and is projected onto a predetermined position of the light-absorbing layer formed on the surface (lower surface) thereof with a reduced size of 1/5 of the mask pattern. Here, the predetermined position in the XY plane is determined by adjusting the X axis (Xd), Y axis (Yd), and θ axis (θd) of the donor stage based on an alignment mark or the like previously attached to the donor substrate.
In order to adjust the image surface of the mask pattern generated by the projection lens to focus on the boundary surface of the donor substrate and the light absorption layer, the positions of the Z-axis stage (Zl) of the projection lens and the W-axis of the mask stage on which the field lens (F) is placed are adjusted. In addition, although the function of adjusting the Z axis direction of the donor substrate (Z axis stage) may be added, it is necessary to consider a decrease in the accuracy of the transfer position due to an increase in the weight load on the X axis (Xd) of the donor stage.
In adjusting the imaging position of the boundary surface of the donor substrate surface and the light absorbing layer, real-time monitoring using a confocal Beam Profiler (BP) having a plane in a conjugate relationship with the image plane at the focal plane is effective. Fig. 8 shows a case of this adjustment screen. In this example 1, the spatial intensity distribution of the laser light that is demagnified on the boundary surface of the donor substrate surface and the light absorbing layer was monitored in real time and at high resolution.
The above is a function realized by the device structure of the present embodiment 1 in relation to the transmission of the pulse laser light emitted from the laser device.
Next, a brief explanation will be given of how parallelism between the Y axis (Yr) of the acceptor station and the Y axis (Yd) of the donor station is mechanically achieved using the structure of this example 1 in the apparatus of the present invention.
Each stage as shown in fig. 1A, an X-axis (Xd) of a donor stage is placed on a stone stage 1 (G1), and an optical stage (Xo) is placed thereon. The receptor block (Yr, thetar, zr) is placed on the stone platform 2 (G2). Furthermore, the whole is built on a basic platform (G). Further, a rotation adjusting mechanism (RP) is provided between G1 and Xd, xo and Xd, and Xd and Yd (not shown).
In addition, in order to adjust the verticality and parallelism of the axes of the respective stages, an adjustment substrate AD held on the donor stage is used instead of the donor substrate, and an adjustment substrate AR placed on the acceptor stage is used instead of the acceptor substrate. Lines indicating an X axis (alignment line X) and a Y axis (alignment line Y) which accurately form right angles are drawn as alignment lines on any one of the adjustment substrates, and marks are also added at predetermined positions (intervals).
1) Parallelism of Yr and AR (Y) (perpendicularity of Yr and AR (X))
In order to adjust the parallelism of the Y-axis (Yr) of the receptor stage and the alignment line Y on the adjustment substrate AR, the adjustment substrate AR placed on the Z-axis (Zr) of the receptor stage is observed by a high-magnification CCD camera fixed on the optical stage (Xo) or on a Z-axis stage for a projection lens provided on the optical stage (Xo). The Yr axis is moved by 400[ mm ], and the theta axis (thetar) of the receptor stage is used to adjust the amount of deviation of the X axis direction of the alignment line Y within 1[ mu ] m. In addition, the movement distance of the stage at this time is within the range of the effective stroke of the stage, and the allowable deviation amount varies according to the required transfer accuracy. (the same applies to the following)
2) Parallelism of AR (X) and Xd (perpendicularity of Yr and Xd)
Then, using the alignment line X of the adjustment substrate AR adjusted in the above manner, perpendicularity between the X axis (Xd) of the donor stage and the Y axis (Yr) of the acceptor stage is adjusted while being observed by a high-magnification CCD camera fixed to the optical stage (Xo) or a Z-axis stage for a projection lens provided on the optical stage (Xo) as well. The Xd axis is moved by 400[ mm ], the mounting angles of the alignment line X and the X are adjusted by using a rotation adjustment mechanism between the G1 and the Xd so that the deviation amount of the Y axis direction of the alignment line X is within 1[ mu ] m, and the mounting angles of the G1 and the Xd, that is, the Xd, relative to the Yr are adjusted.
3) Parallelism of AR (X) and Xo (perpendicularity of Yr and Xo, parallelism of Xd and Xo)
The alignment line X of the adjustment substrate AR adjusted in the above manner is used to adjust the parallelism between the optical stage (Xo) and the X-axis (Xd) of the donor stage while being observed by a high-magnification CCD camera fixed to the optical stage (Xo) or a Z-axis stage for a projection lens provided on the optical stage (Xo). The X axis is moved by 200[ mm ], and the parallelism of the optical stage (Xo) with respect to the X axis (Xd) of the donor stage is adjusted by a rotation adjustment mechanism therebetween so that the Y axis direction deviation of the alignment line X is within 0.5[ mu ] m.
4) Parallelism of Yd and AD (Y)
In order to adjust the parallelism of the Y-axis (Yd) of the donor stage and the alignment line Y on the adjustment substrate AD, the adjustment substrate AD held on the θ -axis (θd) of the donor stage is observed by a high-magnification CCD camera fixed on an optical stage (Xo) or a Z-axis stage for a projection lens provided on the optical stage (Xo). The Yd axis is moved by 200[ mm ], and the θ axis (θd) of the donor stage is used to adjust the amount of deviation of the X axis direction of the alignment line Y to be within 0.5[ mu ] m.
5) Parallelism of AD (X) and Xo (parallelism of AD (X) and Xd, perpendicularity of Xd and Yd)
In order to adjust the perpendicularity of the X-axis (Xd) of the donor stage and the Y-axis (Yd) of the donor stage, an alignment line X on the adjustment substrate AD is observed by a high-magnification CCD camera fixed on an optical stage (Xo) having been adjusted in parallelism with the X-axis (Xd) of the donor stage or on a Z-axis stage for a projection lens provided on the optical stage (Xo). The optical table (Xo) is moved by 200 mm, the perpendicularity of the Y axis (Yd) of the donor table suspended on the X axis (Xd) of the donor table is adjusted by a rotation adjusting mechanism between the two so that the deviation of the Y axis direction of the alignment line X is within 0.5[ mu ] m.
6) Parallelism of AD (Y) and Yr (parallelism of Yd and Yr)
Finally, in order to confirm the parallelism of the Y-axis (Yd) of the donor stage and the Y-axis (Yr) of the acceptor stage, a high-magnification CCD camera is mounted on the Y-axis (Yd) of the donor stage, and an alignment line Y of the adjustment substrate AR placed on the opposite acceptor stage is observed. At this time, the adjustment substrate AD is removed in advance. The X-axis (Xd) of the donor station is moved so that the high magnification CCD camera can view either end of the acceptor station. Then, the Y-axis (Yd) of the donor stage is moved by 400[ mm ], and it is checked whether the deviation in the X-axis direction of the alignment line Y is within 1[ mu ] m. In order to confirm the other end of the receptor table in the same manner, after the Xd was moved to the other end, the Yd was moved by 400 mm, and the deviation in the X-axis direction of the alignment line Y was confirmed to be 1 μm or less. In addition, the position of the alignment mark may be changed by bringing Yd and Yr into parallel.
In addition, in the case of mounting a high-magnification CCD camera on the Y axis (Yd) of the donor stage, there is a possibility that the high-magnification CCD camera comes into contact with the X axis of the donor stage and the shape (opening) of the stone stage 1, depending on the position of the X axis. In this case, the alignment line Y of the adjustment substrate AD can be observed and the amount of deviation in the X-axis direction can be confirmed by moving the Y-axis (Yr) of the receptor stage by 200[ mm ] instead of the high-magnification CCD camera mounted on Yd.
Since the stone platform 1 (G1) and the stone platform 2 support each stage independently and Yd is suspended from Xd provided on G1, although the parallelism of Yr and Yd cannot be directly adjusted, the parallelism of Yr and Yd can be adjusted in steps on the order of [ μrad ] as described above. Further, since errors in the parallelism (perpendicularity) are accumulated in the adjustment steps in the order of 1) to 6), it is desirable to adjust in such a manner that the allowable deviation amount in the initial stage is suppressed to be as small as possible. The adjustment steps 1) to 6) describe adjustment of the parallelism and the perpendicularity of each stage of the XY plane, but other axis (X axis and Y axis) adjustment is also necessary.
Next, scanning of the donor substrate and the acceptor substrate at the time of transfer in this embodiment 1 will be described with reference to fig. 9A to 9C. Here, in the plan view of fig. 9A to 9C, the operator is positioned on the left side of these figures, and the donor substrate (D) and the acceptor substrate (R) are scanned in the front-rear direction with respect to the operator.
First, the amount of bending of the donor substrate adsorbed and set on the θ axis (θd) of the donor stage is measured over the entire surface of the donor substrate, and is plotted as two-dimensional data together with position information. This information is used as a correction amount of the Z axis (Zr) of the acceptor station corresponding to the X axis (Xd) and the Y axis (Yd) of the donor station moving in the transfer step.
In the following description, for convenience of explanation, a predetermined position on the left front side of the acceptor substrate (R) and the donor substrate (D) when viewed from the operator is defined as the origin of each substrate. The positions of the optical stage (Xo) and the acceptor stages (Yr, θr) when the laser beam is irradiated to the origin of the acceptor substrate are defined as the origins, respectively. In addition, in the donor substrate, the positions of the donor stations (Xd, yd, θd) at the time of irradiation of the Laser (LS) are also defined as respective origins. However, the origin of each stage is not limited to one end of the stroke range, and is a position of a stroke portion for the transfer process and the substrate removal thereafter, leaving the movement.
Fig. 9A shows a case where the first pulse of the laser beam (LS) is irradiated to the donor substrate (D) and the acceptor substrate (R) located at the origin position. Here, both side view (side view) and plan view (top view) are illustrated. The one-dot chain line indicates a case where the object (S) is irradiated with laser light by the reduction projection optical system, and a light absorbing layer (not shown) in a region of 10×10[ μm ] receiving the irradiation absorbs the laser light, ablates (ablation), and generates a shock wave, whereby the object in the same region is transferred onto the opposite receiving substrate. Although three objects are shown in the figure, in the case of example 1, a total of 300 objects are transferred to the receiving substrate at a time.
In this example 1, the laser device was oscillated at 200[ Hz ] and the transfer was performed by one irradiation, so that the acceptor table (Yr) was scanned in the-Y direction at a speed of 6[ mm/s ] without stopping the acceptor substrate until the next irradiation position.
On the other hand, the Y-axis (Yd) of the donor stage is synchronized with the Y-axis (Yr) of the acceptor stage, and the donor substrate is scanned in the same-Y direction at a speed of 3[ mm/s ] without stopping the donor substrate. That is, the moving speed ratio (gear ratio) of Yd to Yr is 1:2. fig. 9B shows the case of the second irradiation after each substrate has been moved.
The synchronization of the positions of Yr and Yd is performed by synchronizing the two stations in a gear pattern by using a gear command of the station system with Yr as a reference (master) and Yd as a slave (slave). A programmable multi-axis control is used in the control system.
In addition, in order to determine the gear ratio of the gear instruction, the actual measurement of the stage position measured by the laser interferometers is used. A corner cube (Ic) that moves together with the moving stage of Yr and constitutes a laser interferometer in the vicinity of the acceptor substrate is mounted on the stone stage 2 (or equivalent stationary position), and a he—ne laser (IL) having a wavelength of 632.8 nm and a light receiving unit (not shown in fig. 5A) are provided. Similarly, a corner cube is attached to the side surface of the Yd mobile station, and an interferometer laser beam and a light receiving unit (not shown in fig. 5B) are provided on the Xd. Thus, accurate position synchronization of each station is achieved.
As described above, each stage starts to accelerate from a position on the front side of the origin in such a manner that the position at the origin has become stable constant velocity motion. During the acceleration time and the time until the stage reaches the origin, the laser pulse needs to be cut off so that the laser beam is not irradiated onto the donor substrate. Therefore, the external oscillation trigger signal or the operation start trigger signal of the high-speed shutter and the stage drive signal are transmitted from the programmable multi-axis control device to the laser device with high accuracy.
Fig. 9C shows the case of the third irradiation. The following can be seen from the figure: the movement distance of the acceptor substrate (R) is doubled with respect to the movement distance of the donor substrate (D). Thereafter, the acceptor substrate and the donor substrate also continue to move.
When the donor substrate scans 180[ mm ] in the-Y direction and ends, similarly, when the acceptor substrate scans 360[ mm ] in the-Y direction and ends, the oscillation of the laser device is temporarily stopped, or the irradiation of the laser light is cut off by a high-speed shutter. By scanning the distance, 300 objects arranged in the X-axis direction are transferred 12000 lines in total by 360 ten thousand in the Y-axis direction of the acceptor substrate. Fig. 10 shows this situation.
During the stop time, both the Y-axis (Yr) of the acceptor station and the Y-axis (Yd) of the donor station return to the origin. (but considering the acceleration distance of the next scan. The same applies hereinafter), on the other hand, the X-axis (Xd) of the donor table is returned to the position of-9 [ mm ] compared to the previous origin. The transfer process is started again from the new region. The above operation is repeated hereinafter.
FIG. 11 shows the case where after the-9 [ mm ]. Times.20 steps (step) of Xd are completed, the same operation is started with the point as a new origin by returning to the position of 15[ mu ] m in the-X direction (shown by a solid line) from the previous origin (shown by a broken line). Thereafter, the steps of Y-axis scanning (180 [ mm ] (Yd) and 360[ mm ] (Yr)) and Xd were repeated for-9 [ mm ]. Times.20 times. Thus, the irradiation of the laser beam is performed to the region not irradiated with the laser beam (the irradiation scheduled region of the laser beam (LS) next time is shown by a single-dot chain line in the figure) during the first 180[ mm ] scan of Xd (-20 steps of movement of 9[ mm ]), and the object on the donor substrate can be transferred to the acceptor substrate without waste and in a larger amount.
In addition, the processing time is about 360[ mm ]/6[ mm/s ] ×40 times ] =2400 [ s ]. The time required for the Y axis (Yr) of the receptor table to move by the distance required for acceleration and deceleration and the time required for returning to the origin for each Y axis scan are not included in this time. In addition, the processing time can be shortened by 1/5 by increasing the repetition rate of the excimer laser to 1[ kHz ].
FIG. 12 shows the synchronous position error of the two stages in the case where the Y-axis (Yr) of the acceptor stage is moved by a distance of 400[ mm ] at a movement speed of 150[ mm/s) with respect to the Y-axis (Yr) of the acceptor stage and the Y-axis (Yd) of the donor stage is moved by a distance of 200[ mm ] at a movement speed of 75[ mm/s) with respect to the Y-axis (Yd) of the donor stage as a slave (slave) in a synchronous manner by the apparatus configuration of this example 1. Specifically, the horizontal axis represents, as the elapsed time corresponding to the movement speed of the receptor station, the difference (Δydr=δyd- δyr) between the error amount (δyr) obtained from the linear encoder at Yr as the reference (master) and the position information measured by the laser interferometer, and the error amount (δyd) obtained from the linear encoder at Yd as the slave (slave) moving synchronously at the speed of 1/2 and the position information measured by the laser interferometer. From the results, it can be seen that the positional synchronization accuracy within.+ -.1 [ mu ] m is achieved within a movement distance of 400 mm.
As described above, the transfer pattern (pattern) of the object to the acceptor substrate in example 1 is such that 10×10 μm is transferred in a matrix at intervals of 30 μm, but for example, if the intervals are set to 60 μm, four acceptor substrates can be transferred with one donor substrate.
Example 2
In this example 2, the following example is provided, unlike example 1 in which the object on the surface of the donor substrate is in a single layer state: a total of 144 million objects having a shape of 10X 10[ mu ] m and a spacing of 15[ mu ] m, which are formed in a matrix on a donor substrate having the same size of 200X 200[ mu ] m, are transferred to an acceptor substrate having a size of 400X 400[ mu ] m in a matrix at a density of 1/2 of the donor substrate, that is, at intervals of 30[ mu ] m.
Finally, the arrangement of the objects transferred to the acceptor substrate is the same as that of example 1, but the difference is that in this example 2, the objects are arranged on the donor substrate in the same manner at twice the density in advance, and transferred to the acceptor substrate with a positional accuracy of ±1[ μm ]. In this case, the accuracy of the position synchronization between the Y axis (Yd) of the donor stage and the Y axis (Yr) of the acceptor stage is further strictly required than in example 1.
Fig. 13A to 13C show the case of irradiation of the first pulse of the laser Light (LS) on the donor substrate (D) and the acceptor substrate (R) located at the origin positions to the case of the third irradiation, as in example 1.
Example 3
In this example 3, the method of transferring the object on the surface of the donor substrate to the acceptor substrate is the same as that of example 1 or example 2. On the other hand, in the other hand, the adjustment method of the parallelism of the Y axes and the parallelism of the X axes of the respective stages and the perpendicularity of the Y axes and the X axes is different from the embodiment. That is, the adjustment method described in example 1 is as follows: in contrast to the above-described adjustment steps 1) to 6) being performed in order to adjust the parallelism of the Y axis (Yr) of the acceptor station and the Y axis (Yd) of the donor station, in the present embodiment 3, the parallelism of the above-described Yr and Yd is adjusted at an early stage of the adjustment step.
1) Straightness of Yr, thetar, zr
This adjustment step is an adjustment step as a premise common to the above-described embodiments 1 and 2. The straightness of the Y axis (Yr) of the receptor table provided on the stone stage 2 (G2) and the θ axis (θr) provided thereon, and the straightness of the support of the same Z axis (Zr) and the receptor substrate (straightness with respect to the Z axis as the vertical direction when the horizontal plane is the XY plane) are adjusted using a laser interferometer or the like. Basically, after this adjustment, the adjustment that may affect the perpendicularity of the receptor block is not performed, and the adjustment of the other blocks is performed based on, for example, the uppermost surface of the receptor block.
2) Parallelism of Yr and AR (Y) (perpendicularity of Yr and AR (X))
Similarly to the adjustment step 1) of example 1, the parallelism between the Y axis (Yr) of the receptor table and the alignment line Y on the adjustment substrate AR is adjusted. Thereby, the perpendicularity of Yr with the alignment line X is also adjusted. In addition, in the case of using an alignment line or an alignment mark obtained by directly drawing or the like on Yr without using the adjustment substrate AR, the adjustment step 1) may be omitted.
3) Parallelism of AR (X) and Xd (perpendicularity of Yr and Xd)
Next, the alignment line X of the adjustment substrate AR is observed by a high-magnification CCD camera provided on an optical stage (Xo) placed on the X axis (Xd) of the donor stage. The position of the high-magnification CCD camera in the Z-axis direction is determined by the design of the projection optical system, but in this embodiment 3, a Z-axis stage (Zl) holding a projection lens is used and fixed in the vicinity of the position of the projection lens (Pl). The angle of attachment of Xd to the stone platform 1, that is, the perpendicularity of Xd to Yr is adjusted by using a rotation adjustment mechanism so that the deviation of X in the Y-axis direction of the alignment line X is within 0.3[ mu ] m.
4) Parallelism in YZ plane of Yr and Yd
In the description of example 1, the description of the adjustment steps of other axes (X axis and Y axis) is omitted, and the adjustment step of parallelism in the YZ plane, which is the X axis, will be briefly described. The lower surface of the Y-axis (Yd) of the donor station is observed using a height sensor disposed on the Z-axis (Zr) or other part of the acceptor station. The Yr and Yd are simultaneously moved (parallel movement) by the same distance of 200[ mm ] or more, and the change in the measured value (the distance between Zr and Yd) of the gap sensor is observed. The parallelism in the YZ plane between Yr and Yd is adjusted by inserting a shim plate between a rotation adjusting mechanism and Yd or Xd provided between Xd and Yd in such a manner that the variation is within 5[ mu ] m or within a sufficiently small range compared with the depth of focus of imaging by a projection lens.
5) Parallelism of Yr and Yd
An alignment mark for pattern matching provided on the lower surface of Yd is observed using a high-magnification CCD camera provided on Zr or other places. When the positions of the alignment mark images (cross marks or the like) of the pattern matching are moved in the X-axis direction by synchronously moving (parallel moving) Yr and Yd by the same distance, the alignment mark images are adjusted by using a rotation adjustment mechanism provided between Xd and Yd to correct the alignment mark images. In addition, instead of the alignment mark, an alignment line Y of the adjustment substrate AD mounted on the Y axis of the donor stage may be used.
6) Verticality of Yr and Xo
The alignment line X of the adjustment substrate AR, of which the perpendicularity with the Y axis (Yr) of the receptor stage is adjusted by the adjustment step 1), is observed by a high-magnification CCD camera provided on the optical stage (Xo). The mounting angle of the Xo with respect to the Xd is adjusted by a rotation adjustment mechanism provided therebetween so that the amount of deviation in the Y-axis direction of the alignment line X is within 0.3[ mu ] m.
Example 4
Fig. 2A shows the main structural parts of the transfer device of this embodiment 4. The seventh invention of the present invention is an embodiment having a basic structure. In fig. 2A to 2C, illustrations of a laser device, a control device, and other monitors and the like (all of which are the same as those in embodiment 1) are omitted, and X-axis, Y-axis, and Z-axis directions are shown. The arrangement on the donor substrate, the acceptor substrate, and the donor substrate of the transfer target used in this example 4 and the arrangement after transfer to the acceptor substrate are the same as those in example 2.
The case of the optical system for irradiating the transfer object on the donor substrate with the pulsed laser light emitted from the excimer laser apparatus is the same as in example 1 except for the portions generated by the different configurations of the respective stage groups shown in fig. 1A and 2A, as described below. That is, in the case of the transfer device of the sixth invention shown in fig. 1A to 1C, the X-axis (Xd) of the donor stage and the optical stage (Xo) are sequentially arranged on the stone stage 1 (G1), whereas in the case of the transfer device of the seventh invention shown in fig. 2A to 2C, the construction of these stage groups differs in that: place Xo on G1 and hang down below G1 to set Xd.
The outgoing light from the excimer laser enters the telescope optical system and propagates to the shaping optical system in front of it. As shown in fig. 2A, the shaping optical system is provided on an optical table (Xo) that moves in the X-axis direction so as to be parallel to the optical axis thereof. Furthermore, xo is placed on a stone platform 1 (G1) made of granite, with a rotation adjustment mechanism (RP) therebetween. Here, xo is at right angles to the Y axis (Yr) of the acceptor station placed on the stone platform 2 (G2) different from G1, and is parallel to the X axis (Xd) of the donor station. The laser beam before entering the shaping optical system is adjusted by the telescope optical system to have substantially the same shape (substantially 25×25 mm (vertical×horizontal, FWHM)) regardless of the movement of Xo.
The X-axis (Xd) of the donor stage is suspended below G1, and the Y-axis (Yd) of the donor stage is also suspended. In addition, there is a rotational adjustment mechanism between them. Fig. 2B shows a case where Xo and Xd are moved by the same distance with respect to G1 by a side view. Thereby, the position in the X-axis direction with respect to Yd can be changed without changing the relative positions of Xo and Xd on the X-axis. Fig. 2C shows a case where only Xo moves with respect to G1 in a side view. Thereby, the relative positions on the X axis of Xd and Xo can be changed.
The details of the field lens (F), the mask (M), and the projection lens (Pl) which are other reduction projection optical systems are the same as those of example 1, and the laser light emitted from the projection lens is incident from the rear surface of the donor substrate and projected accurately toward the transfer target object formed on the surface (lower surface) thereof with a reduced size of 1/5 of the pattern drawn on the mask. In addition, imaging on the surface of the donor substrate was performed by a confocal beam profiler as in example 1.
Based on the mask pattern in which the transfer target disposed on the surface of the donor substrate is subjected to reduced projection in the above-described manner, when the transfer target is transferred to the opposite acceptor substrate, the manner in which the donor substrate and the acceptor substrate are scanned and the manner in which the transfer target is transferred to the acceptor substrate are the same as those in fig. 6, 10, 11, and 13A to 13C, and the positional synchronization accuracy of the movement of the Y axis (Yr) of the acceptor stage and the Y axis (Yd) of the donor stage is the same as that in fig. 12 described in embodiment 1.
The adjustment method of the parallelism of the Y axes and the parallelism of the X axes of the respective stages and the perpendicularity of the Y axes and the X axes is the same as that of example 3. Specifically, the Y axis (Yr) of the recipient stage whose linearity is adjusted is used as a reference for adjustment, and the verticality between Yr and the X axis (Xd) of the donor stage suspended from the stone stage 1 (G1) is observed by a high-magnification CCD camera fixed to the Z axis (Zr) of the recipient stage, and is adjusted by a rotation adjustment mechanism (RP) between G1 and Xd. Further, the parallelism of the Y-axis (Yd) and Yr of the donor stage suspended on the adjusted Xd was observed by the same high-magnification CCD camera, and adjusted by RP between the Xd and Yd. Finally, the perpendicularity of the optical table (Xo) and Yr is observed by a high-magnification CCD moving together with Xo, and is adjusted by RP between G1 and Xo.
[ Industrial Applicability ]
The present invention can be used as a manufacturing apparatus for a display.
Claims (17)
1. A transfer device selectively peels an object on a surface of a moving donor substrate by irradiating the object on the surface with a pulsed laser from a back surface of the donor substrate, and transfers the object onto a recipient substrate moving on an opposite side to the donor substrate,
The transfer device is characterized in that,
the transfer device includes:
a pulsed laser device;
the length of the telescope is chosen to be the same, the pulse laser emitted from the laser device is made to be parallel light;
a shaping optical system for shaping the spatial intensity distribution of the pulse laser passing through the telescope into uniform distribution;
a mask for passing the pulse laser beam shaped by the shaping optical system in a predetermined pattern;
a field lens located between the shaping optical system and the mask;
a projection lens for reducing and projecting the pulse laser light having passed through the pattern of the mask on the surface of the donor substrate;
a mask table for holding the field lens and the mask;
an optical stage holding the shaping optical system, the mask stage, and the projection lens;
a donor stage for holding the donor substrate with an orientation such that a back surface of the donor substrate is an incident side of the pulse laser;
a receptor stage holding the receptor substrate; and
a programmable multi-axis control device having a trigger output function and a stage control function for the pulse laser oscillation,
the receptor table has a Y axis when the horizontal plane is an XY plane, a Z axis in the vertical direction, and a theta axis in the XY plane,
The donor station has an X-axis, a Y-axis and a theta-axis,
the projection lens is held on the optical stage together with a Z-axis stage for the projection lens,
the telescope, the shaping optical system, the field lens, the mask and the projection lens constitute a reduction projection optical system which reduces and projects a pattern of the mask on a surface of the donor substrate,
the X-axis of the donor station is disposed on a first stage,
the Y-axis of the receptor stage is disposed on a second stage different from the first stage,
the Y-axis of the donor table is suspended and arranged on the X-axis of the donor table.
2. The transfer device of claim 1, wherein the transfer device comprises a plurality of sensors,
the X-axis of the donor station is placed on the first stage,
the optical stage is placed on the X-axis of the donor stage.
3. The transfer device of claim 1, wherein the transfer device comprises a plurality of sensors,
the optical bench is placed on the first stage,
the X-axis of the donor table is suspended and arranged on the first platform.
4. The transfer device of claim 1, wherein the transfer device comprises a plurality of sensors,
the X-axis of the donor station is mounted on the first stage,
the optical bench is placed on a third platform different from both the first platform and the second platform.
5. The transfer device according to claim 1, wherein a rotation adjustment mechanism for fine-adjusting a setting angle in an XY plane between the X axis of the donor stage and the first stage is provided between the X axis of the donor stage and the first stage, A rotation adjustment mechanism for finely adjusting a setting angle in an XY plane between an X axis of the donor table and a Y axis of the donor table is provided between the two.
6. The transfer apparatus according to claim 2, wherein a rotation adjustment mechanism for fine-adjusting a setting angle in an XY plane between the X axis of the donor table and the first stage is provided between the X axis of the donor table and the optical stage, a rotation adjustment mechanism for fine-adjusting a setting angle in an XY plane between the X axis of the donor table and the optical stage is provided between the X axis of the donor table and the Y axis of the donor table, and a rotation adjustment mechanism for fine-adjusting a setting angle in an XY plane between the two is provided between the X axis of the donor table and the Y axis of the donor table.
7. A transfer device according to claim 3, wherein a rotation adjustment mechanism for fine-adjusting a setting angle in an XY plane between the X axis of the donor table and the first stage is provided between the optical table and the first stage, a rotation adjustment mechanism for fine-adjusting a setting angle in an XY plane between the two is provided between the X axis of the donor table and the Y axis of the donor table, and a rotation adjustment mechanism for fine-adjusting a setting angle in an XY plane between the two is provided between the X axis of the donor table and the Y axis of the donor table.
8. The transfer apparatus according to claim 4, wherein a rotation adjustment mechanism for fine-adjusting a setting angle in an XY plane between the X axis of the donor table and the first stage is provided between the optical table and the third stage, and a rotation adjustment mechanism for fine-adjusting a setting angle in an XY plane between the X axis of the donor table and the Y axis of the donor table is provided between the X axis of the donor table and the Y axis of the donor table.
9. Transfer device according to any one of claims 1 to 8, wherein the laser device is an excimer laser.
10. The transfer device of claim 9, wherein the transfer device comprises a pulse shutter that cuts off any pulse train of laser pulses emitted from the excimer laser.
11. The transfer apparatus according to claim 10, wherein the programmable multi-axis control device has a function of simultaneously controlling at least a Y-axis of the acceptor station and a Y-axis of the donor station, and includes a device for correcting the movement position error using two-dimensional distribution correction value data prepared in advance for correcting the movement position error of the station.
12. The transfer device of claim 11, wherein the transfer device comprises a plurality of sensors,
a high magnification camera to monitor the position of the donor substrate is disposed on the Z axis of the acceptor station,
the high magnification camera that monitors the position of the acceptor substrate is either provided on the X-axis of the donor stage or a portion that moves with the X-axis of the donor stage, or provided on the optical stage or a portion that moves with the optical stage.
13. The transfer device of claim 12, wherein the donor and acceptor stations include a gap sensor that measures a gap of a surface of the donor substrate from a surface of the acceptor substrate.
14. The transfer apparatus according to claim 13, wherein the Y-axis of the acceptor station and the Y-axis of the donor station each include a position measuring device using a laser interferometer.
15. The transfer device of claim 14, wherein the transfer device comprises a confocal beam profiler having a focal plane at a location conjugate to a location where the pattern of the mask is demagnified projected and imaged by the projection lens.
16. A method for using a transfer device is characterized in that,
the transfer device is the transfer device of claim 13,
the gap sensor is used to measure the bending amount of the donor substrate in advance together with the XY position information of the donor substrate, and the gap between the donor substrate and the acceptor substrate is corrected while adjusting the Z axis of the acceptor stage or the Z axis stage of the projection lens based on the two-dimensional distribution data of the bending amount obtained by the measurement.
17. A method for adjusting a transfer device according to any one of claims 5 to 8, wherein the transfer device is a method for adjusting parallelism between a Y-axis of the acceptor station and a Y-axis of the donor station in a step of assembling the transfer device,
the adjustment method of the transfer device includes the following steps in order, based on the Y axis of the receptor table, in which the straightness adjustment is performed together with the Z axis and the θ axis of the receptor table:
adjusting the perpendicularity between the Y axis of the acceptor station and the X axis of the donor station by a rotation adjusting mechanism positioned between the first stage and the X axis of the donor station;
Synchronizing and advancing the Y-axis of the donor stage and the Y-axis of the acceptor stage suspended from the X-axis of the donor stage with the verticality adjusted, and observing an alignment mark on the Y-axis of the opposing donor stage by a high magnification camera mounted on a position moving together with the Y-axis of the acceptor stage; and
based on the observation result, the parallelism of the Y axis of the acceptor station and the Y axis of the donor station is adjusted by a rotation adjustment mechanism between the X axis of the donor station and the Y axis of the donor station.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410036703.3A CN117715492A (en) | 2018-06-20 | 2018-06-26 | Transfer device, transfer method, mask and manufacturing method of display |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018116692 | 2018-06-20 | ||
| JP2018-116692 | 2018-06-20 | ||
| PCT/JP2018/024113 WO2019244362A1 (en) | 2018-06-20 | 2018-06-26 | Lift device and method for using same |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410036703.3A Division CN117715492A (en) | 2018-06-20 | 2018-06-26 | Transfer device, transfer method, mask and manufacturing method of display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112272966A CN112272966A (en) | 2021-01-26 |
| CN112272966B true CN112272966B (en) | 2024-02-02 |
Family
ID=68983359
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880094255.5A Active CN112272966B (en) | 2018-06-20 | 2018-06-26 | Transfer device, method of use and adjustment method |
| CN202410036703.3A Pending CN117715492A (en) | 2018-06-20 | 2018-06-26 | Transfer device, transfer method, mask and manufacturing method of display |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410036703.3A Pending CN117715492A (en) | 2018-06-20 | 2018-06-26 | Transfer device, transfer method, mask and manufacturing method of display |
Country Status (3)
| Country | Link |
|---|---|
| CN (2) | CN112272966B (en) |
| TW (4) | TWI827492B (en) |
| WO (1) | WO2019244362A1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7255000B2 (en) * | 2021-07-20 | 2023-04-10 | 信越化学工業株式会社 | Defect removal method, lift method, photomask and lift system |
| KR20240031297A (en) * | 2021-07-20 | 2024-03-07 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Scanning reduction projection optical system and laser processing device using the same |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999027569A1 (en) * | 1997-11-22 | 1999-06-03 | Nikon Corporation | Aligner, exposure method and device manufacturing method |
| CN1227150A (en) * | 1998-02-27 | 1999-09-01 | 三菱电机株式会社 | Laser processing device |
| JP2003229258A (en) * | 2002-01-30 | 2003-08-15 | Eastman Kodak Co | Manufacturing method of organic electroluminescent display device |
| CN1453636A (en) * | 2002-04-25 | 2003-11-05 | 精工爱普生株式会社 | Producing method of electronic apparatus and producing apparatus thereof |
| KR20070107528A (en) * | 2006-05-03 | 2007-11-07 | 삼성에스디아이 주식회사 | Laser irridation apparatus, laser induced thermal imaging apparatus comprising the apparatus and fabrication method of oled array substrate using the apparatus |
| JP2009199856A (en) * | 2008-02-21 | 2009-09-03 | Sony Corp | Organic thin film manufacturing device and method |
| WO2009110202A1 (en) * | 2008-03-07 | 2009-09-11 | 株式会社ニコン | Moving device and exposure device |
| KR20100062595A (en) * | 2008-12-02 | 2010-06-10 | 엘지디스플레이 주식회사 | Laser induced thermal imaging apparatus and fabricating method of oled |
| JP2013020768A (en) * | 2011-07-08 | 2013-01-31 | Ulvac Japan Ltd | Laser transfer device |
| KR20130078141A (en) * | 2011-12-30 | 2013-07-10 | 엘아이지에이디피 주식회사 | Tray for donor film |
| CN103811679A (en) * | 2012-11-12 | 2014-05-21 | 三星显示有限公司 | Laser induced thermal imaging apparatus and laser induced thermal imaging method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8208119B2 (en) * | 2004-02-04 | 2012-06-26 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
| KR100635579B1 (en) * | 2004-12-20 | 2006-10-17 | 삼성에스디아이 주식회사 | laser induced thermal imaging apparatus, laser induced thermal imaging method using the apparatus and fabrication method of OLED using the apparatus |
| KR20140133741A (en) * | 2013-05-10 | 2014-11-20 | 삼성디스플레이 주식회사 | Liti mask and laser irradiation device including thereof |
| US10252507B2 (en) * | 2013-11-19 | 2019-04-09 | Rofin-Sinar Technologies Llc | Method and apparatus for forward deposition of material onto a substrate using burst ultrafast laser pulse energy |
| CN109803786B (en) * | 2016-09-30 | 2021-05-07 | 康宁股份有限公司 | Apparatus and method for laser processing of transparent workpieces using non-axisymmetric beam spots |
-
2018
- 2018-06-26 CN CN201880094255.5A patent/CN112272966B/en active Active
- 2018-06-26 CN CN202410036703.3A patent/CN117715492A/en active Pending
- 2018-06-26 WO PCT/JP2018/024113 patent/WO2019244362A1/en active Application Filing
- 2018-06-27 TW TW112111310A patent/TWI827492B/en active
- 2018-06-27 TW TW111119187A patent/TWI784911B/en active
- 2018-06-27 TW TW107122157A patent/TWI768072B/en active
- 2018-06-27 TW TW111131169A patent/TWI801309B/en active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999027569A1 (en) * | 1997-11-22 | 1999-06-03 | Nikon Corporation | Aligner, exposure method and device manufacturing method |
| CN1227150A (en) * | 1998-02-27 | 1999-09-01 | 三菱电机株式会社 | Laser processing device |
| JP2003229258A (en) * | 2002-01-30 | 2003-08-15 | Eastman Kodak Co | Manufacturing method of organic electroluminescent display device |
| CN1453636A (en) * | 2002-04-25 | 2003-11-05 | 精工爱普生株式会社 | Producing method of electronic apparatus and producing apparatus thereof |
| JP2003318372A (en) * | 2002-04-25 | 2003-11-07 | Seiko Epson Corp | Method and apparatus of manufacturing electronic device |
| KR20070107528A (en) * | 2006-05-03 | 2007-11-07 | 삼성에스디아이 주식회사 | Laser irridation apparatus, laser induced thermal imaging apparatus comprising the apparatus and fabrication method of oled array substrate using the apparatus |
| JP2009199856A (en) * | 2008-02-21 | 2009-09-03 | Sony Corp | Organic thin film manufacturing device and method |
| WO2009110202A1 (en) * | 2008-03-07 | 2009-09-11 | 株式会社ニコン | Moving device and exposure device |
| KR20100062595A (en) * | 2008-12-02 | 2010-06-10 | 엘지디스플레이 주식회사 | Laser induced thermal imaging apparatus and fabricating method of oled |
| JP2013020768A (en) * | 2011-07-08 | 2013-01-31 | Ulvac Japan Ltd | Laser transfer device |
| KR20130078141A (en) * | 2011-12-30 | 2013-07-10 | 엘아이지에이디피 주식회사 | Tray for donor film |
| CN103811679A (en) * | 2012-11-12 | 2014-05-21 | 三星显示有限公司 | Laser induced thermal imaging apparatus and laser induced thermal imaging method |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI784911B (en) | 2022-11-21 |
| TW202329505A (en) | 2023-07-16 |
| TW202002358A (en) | 2020-01-01 |
| TWI801309B (en) | 2023-05-01 |
| TWI827492B (en) | 2023-12-21 |
| WO2019244362A1 (en) | 2019-12-26 |
| CN112272966A (en) | 2021-01-26 |
| TW202234729A (en) | 2022-09-01 |
| TWI768072B (en) | 2022-06-21 |
| CN117715492A (en) | 2024-03-15 |
| TW202301723A (en) | 2023-01-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7328408B2 (en) | LIFT DEVICE AND RECEPTOR SUBSTRATE MANUFACTURING METHOD | |
| TWI401767B (en) | Positioning apparatus, exposure apparatus and device manufacturing method | |
| KR20010033118A (en) | Stage device and exposure apparatus | |
| JP2011238707A (en) | Exposure device, exposure method, and device manufacturing method | |
| KR20080084583A (en) | Laser machining apparatus | |
| JP4513574B2 (en) | Stage equipment | |
| CN112272966B (en) | Transfer device, method of use and adjustment method | |
| JP2021151666A (en) | Scan type optical reduction system and laser processing device using the same | |
| JP7382453B2 (en) | How to remove defective parts | |
| JP2010087310A (en) | Exposure apparatus, and method of manufacturing device | |
| US20090310108A1 (en) | Exposure apparatus and method of manufacturing device | |
| TW202412360A (en) | Transfer method, photomask and display manufacturing method | |
| KR20100106302A (en) | Exposure method and apparatus, and device manufacturing method | |
| JP2010258085A (en) | Surface position detecting method | |
| JP7278868B2 (en) | Laser processing equipment | |
| JP7255000B2 (en) | Defect removal method, lift method, photomask and lift system | |
| JP2014143429A (en) | Exposure device, exposure method, and device manufacturing method | |
| KR20060120660A (en) | Exposure method and apparatus, and device producing method | |
| JP2023082092A (en) | Laser processing method, photo-mask and laser processing system | |
| TW202317299A (en) | Illumination optical system and laser processing device capable of reducing energy loss by having fly lens itself generating phase difference | |
| JP2004138554A (en) | Measuring device and exposure device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20210607 Address after: Tokyo, Japan Applicant after: Shin-Etsu Chemical Co., Ltd. Address before: Tokyo, Japan Applicant before: MARUBUN Corp. |
|
| REG | Reference to a national code |
Ref country code: HK Ref legal event code: DE Ref document number: 40044825 Country of ref document: HK |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |