CN112272966A - Transfer device and method of use - Google Patents
Transfer device and method of use Download PDFInfo
- Publication number
- CN112272966A CN112272966A CN201880094255.5A CN201880094255A CN112272966A CN 112272966 A CN112272966 A CN 112272966A CN 201880094255 A CN201880094255 A CN 201880094255A CN 112272966 A CN112272966 A CN 112272966A
- Authority
- CN
- China
- Prior art keywords
- axis
- donor
- stage
- substrate
- receptor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000012546 transfer Methods 0.000 title claims abstract description 98
- 238000000034 method Methods 0.000 title claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 213
- 230000003287 optical effect Effects 0.000 claims abstract description 98
- 230000007246 mechanism Effects 0.000 claims abstract description 52
- 238000007493 shaping process Methods 0.000 claims abstract description 24
- 238000009826 distribution Methods 0.000 claims description 12
- 238000012937 correction Methods 0.000 claims description 10
- 230000010355 oscillation Effects 0.000 claims description 9
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 238000012544 monitoring process Methods 0.000 claims description 5
- 238000005259 measurement Methods 0.000 claims description 4
- 238000009827 uniform distribution Methods 0.000 claims description 2
- 230000001360 synchronised effect Effects 0.000 abstract description 5
- 230000005856 abnormality Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 20
- 239000004575 stone Substances 0.000 description 16
- 238000009434 installation Methods 0.000 description 12
- 239000011159 matrix material Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 230000031700 light absorption Effects 0.000 description 6
- 230000001133 acceleration Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000010438 granite Substances 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000002679 ablation Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000011900 installation process Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Plasma & Fusion (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Microwave Amplifiers (AREA)
- Paper (AREA)
- Massaging Devices (AREA)
- Seal Device For Vehicle (AREA)
Abstract
The invention provides a transfer device and a method of use. The large-scale and fine-scale of the receptor substrate of the transfer device and the reduction of the tact time are realized while maintaining high transfer position accuracy. In a mechanism in which each stage group moving in a state of holding a donor substrate and/or a beam shaping optical system on which a transfer object is placed and a reduction projection optical system, and a stage group holding a recipient substrate as a transfer object are constructed on separate stages, vibration caused by relative scanning of each substrate with respect to a laser beam and abnormality in the accuracy of the synchronous position of the stage that is responsible for the scanning are minimized.
Description
Technical Field
The present invention relates to an apparatus for transferring an object placed on a donor substrate to a receptor substrate with high precision using Laser Induced Forward Transfer (LIFT).
Background
There has been a conventional technique of irradiating an organic EL (electroluminescence) layer on a donor substrate with laser light and transferring the layer onto an opposing circuit substrate. As this technique, patent document 1 discloses a technique of: one laser beam is converted into a plurality of rectangular laser beams having a rectangular shape and a uniform intensity distribution, the plurality of rectangular laser beams are arranged in series at equal intervals, a predetermined region of the donor substrate is irradiated with the plurality of rectangular laser beams so as to be overlapped a predetermined number of times at intervals of a predetermined time or more, the laser beams are absorbed by a metal foil located between the donor substrate and the organic EL layer to generate a elastic wave, and the organic EL layer peeled off by the absorption is transferred onto an opposing circuit substrate.
The following structure is used in this technique: a spacer having an appropriate value of 80 to 100[ mu ] m is sandwiched between a donor substrate and a circuit substrate, and a member which is integrated while keeping a constant gap between the donor substrate and the circuit substrate is placed on a single stage and scanned with respect to a laser beam. However, in this case, in addition to a step of integrating the facing donor substrate and the circuit substrate, a donor substrate having the same size as the circuit substrate is required, and the manufacturing cost and the size of the apparatus need to be increased along with the need to increase the size of the circuit substrate.
Similarly, as a technique for transferring an organic EL layer on a donor substrate to an opposing circuit substrate, patent document 2 discloses the following technique: a light absorbing layer is provided between a donor substrate and an organic EL layer, the light absorbing layer absorbs irradiated laser light to generate a shock wave, and the organic EL layer on the donor substrate is transferred to a circuit substrate provided with a gap of 10 to 100[ mu ] m and facing the circuit substrate. However, patent document 2 does not disclose a scanning method of a laser and a stage structure for realizing the same, and also does not disclose a transfer device. Therefore, patent document 2 cannot be referred to as a technique for maintaining and improving the accuracy of the transfer position that can cope with an increase in size of the circuit board.
Further, patent document 3 discloses a technique related to a step-and-scan method in an exposure apparatus used for semiconductor device manufacturing. The basic considerations are as follows: a row of irradiation regions along the scanning exposure direction of the wafer stage is intermittently exposed while skipping over a few irradiation regions in the middle, and the wafer stage is not stopped in the middle. That is, patent document 3 discloses an exposure apparatus including: a reticle stage holding a reticle; a wafer stage holding a wafer; and a projection optical system that projects the pattern of the reticle onto the wafer, performs exposure while scanning the reticle stage and the wafer stage together with respect to the projection optical system, and sequentially projects the pattern of the reticle onto a plurality of irradiation regions of the wafer, wherein the plurality of irradiation regions on the wafer arranged in the scanning direction are intermittently exposed while the wafer stage is not moved to be stationary and scanned. Thus, in the case where the wafer is required to be large-sized and the processing speed is high, the influence of the vibration and the wobble caused by the scanning of the stage on the exposure accuracy can be reduced as compared with the step and repeat (repeat) method in which the acceleration and deceleration of the wafer stage are repeated.
However, the technique disclosed in patent document 3 is a technique of a semiconductor exposure apparatus based on reduction projection exposure, and the technical field thereof is different from the transfer technique of the present invention. That is, the structures and scanning techniques of the reticle stage and the wafer stage of the exposure apparatus are completely different from those of the present invention, which are used to reduce the size of the object projected onto the donor substrate with high positional accuracy of the mask pattern of the present invention and further transfer the object onto the receptor substrate with the same high positional accuracy. Therefore, the specific stage structure and the scanning technique thereof according to the present invention cannot refer to the technique disclosed in patent document 3.
Documents of the prior art
Patent document 1: japanese patent laid-open publication No. 2014-67671
Patent document 2: japanese laid-open patent publication No. 2010-40380
Patent document 3: japanese patent laid-open publication No. 2000-21702
Disclosure of Invention
The two stages of the donor stage for holding the donor substrate and the optical stage for holding the optical system placed on the donor stage are configured as independent mechanisms from the acceptor stage for holding the acceptor substrate, and the optical stages are configured as independent stages provided on a highly rigid platform without being directly placed on the donor stage, thereby minimizing the influence of vibration and various errors caused by scanning of the stages on the synchronization position accuracy between the stages. As a result, an object of the present invention is to provide a transfer apparatus which contributes to an increase in size and a reduction in tact time of a receptor substrate while maintaining transfer position accuracy.
A first invention is a transfer apparatus that selectively peels an object located on a surface of a moving donor substrate by irradiating a pulsed laser light from a back surface of the donor substrate onto the object, and transfers the object onto a receptor substrate that moves while opposing the donor substrate, the transfer apparatus including: a pulsed laser device; a telescope that converts the pulsed laser light emitted from the laser device into parallel light; a shaping optical system that shapes the spatial intensity distribution of the pulse laser that has passed through the telescope into a uniform distribution; a mask through which the pulsed laser beam shaped by the shaping optical system passes in a predetermined pattern; a field lens located between the shaping optical system and the mask; a projection lens for projecting the laser beam passing through the pattern of the mask onto the surface of the donor substrate; a mask stage holding the field lens and the mask; an optical stage holding the shaping optical system, the mask stage, and the projection lens; a donor table for holding the donor substrate in an orientation in which a back surface of the donor substrate is an incident side of the laser beam; a receptor stage holding the receptor substrate; and a programmable multi-axis control device having a trigger output function and a stage control function for the pulse laser oscillation, the receptor table has a Y axis when a horizontal plane is taken as an XY plane, a Z axis in a vertical direction, and a theta axis in the XY plane, the donor table having an X-axis, a Y-axis, and a theta-axis, the projection lens being held on the optical table together with a Z-axis table for the projection lens, the telescope, the shaping optical system, the field lens, the mask and the projection lens form a reduction projection optical system, the reduction projection optical system reduces and projects the pattern of the mask on the surface of the donor substrate, the X axis of the donor table is arranged on a platform 1, the Y axis of the acceptor table is arranged on a platform 2 different from the platform 1, and the Y axis of the donor table is arranged on the X axis of the donor table in a hanging mode.
Here, the "moving" substrate includes a pulsed laser (indicated as "LS" in fig. 1A, but fig. 1A shows a main component of the second invention, but includes a component common to the structure of the first invention, and therefore, the reference is made, the same applies hereinafter) and moves without stopping at the time of irradiation, and moves and stops repeatedly at the time of irradiation of the pulsed laser, which is selected from a transfer process performed by the transfer device of the present invention, a required tact time, and the like. The present invention also includes a structure in which the donor substrate (D) is repeatedly moved and stopped, and the acceptor substrate (R) is not stopped, and a structure in which the movement is reversed. When only one shot is used for peeling the object from the donor substrate and a high tact time is required, a structure in which the donor substrate and the acceptor substrate move at the same or different speeds without stopping is preferably selected. On the other hand, when the object is to be laminated to a constant thickness, a structure may be selected in which the donor substrate is moved without being stopped and the acceptor substrate is stopped for a constant number of shots.
The "object" is not particularly limited, and is a transfer object provided on a donor substrate or provided on a donor substrate in a single piece with a light absorbing layer (not shown in fig. 1A) interposed therebetween, and includes a thin film represented by an organic EL layer described in the patent document and objects regularly arranged in a fine unit shape, but is not limited to these objects. In addition, the mechanism of transfer includes the following cases: the light absorption layer irradiated with the laser generates a shock wave, whereby the object is peeled from the donor substrate and transferred toward the receptor substrate; peeling off the object by a laser beam directly irradiated to the object without providing a light absorbing layer; but is not limited to these cases.
The donor substrate may be made of a material having a transmittance for the wavelength of the laser beam, and is preferably made of a material having a small amount of warpage due to an increase in the size of the substrate. When the amount of curvature is so large that the uniformity of the gap between the donor substrate and the acceptor substrate is not satisfied, the donor substrate on the donor table (Yd, θ d) is held, for example, by the following method: performing mechanical correction by providing an adsorption region or the like near the center of the donor substrate; in addition, the gap sensor formed by a combination of height sensors described later is used for correction.
In the present invention, the movable range of the donor table includes an XY plane region in which the donor substrate should move in order to transfer an object located near the edge of the donor substrate to the acceptor substrate, and is a range depending on the size of the acceptor substrate. As an example, when the size of the donor substrate in the XY plane is 200X 200[ mm ], and similarly, when the size of the receptor substrate is 400X 400[ mm ], the predetermined range within which the donor tables (Xd, Yd) should move is approximately 800X 800[ mm ]. Fig. 4 shows this situation. In addition, when further movement is necessary to remove the donor substrate, this region is also included.
The material of the "platform" is not particularly limited, but must be a material having extremely high rigidity. In order to provide rigidity to the stage 1 (first stage) (G1), a "コ" or "□" shape in plan view is desirable. In fig. 1A, the platform 2 (second platform) is illustrated as a single shape, but specifically, the following configuration may be adopted: the two platforms are arranged along the Y-axis direction, and the linear scale and the linear motor are arranged in the middle of the two platforms. In addition, the platform 1 and the platform 2 may be structures fixed to the same base platform (G). Further, G1 may be constituted by a combination of the stage 11(G11) and the stage 12 (G12).
In addition, any platform material requires the use of a member having high rigidity such as steel, stone, or ceramic material. For example, the stone may be a stone typified by granite (granite), but is not limited thereto. Furthermore, all of the platforms need not be constructed of the same material.
In the embodiment described below, the movement of each stage is described in detail, but the following operation is generally performed. First, the X-axis (Xd) of the donor table is set on G1 in a state of suspending the Y-axis (Yd) of the donor table, and moved in the X-axis direction. In addition, the movement changes the relative position between the donor substrate and the acceptor substrate along the X-axis. Fig. 1B shows the case of movement. In any of the figures, the detailed structures of the movable table of the table, the linear guide, and the like are not shown.
The method of setting the optical table (Xo) on the stage or the like is not limited, and various mechanisms can be selected, for example, a state of being placed on Xd, a state of being placed on the same stage as the stage on which Xd is provided, a state of being placed on a stage different from Xd, or the like. Xo and Xd travel simultaneously and move in the X-axis direction, and the relative positions of the shaping optical system (H), the field lens (F), the mask (M), and the projection lens (Pl) are moved integrally without changing. On the other hand, a movement along the X-axis Xo changes the relative positional relationship between the donor substrate and the projection lens. Fig. 1C shows the case of this movement.
In addition, in the case where it is not necessary to change the relative position of the donor substrate and the projection lens in the X-axis direction, the donor substrate and the projection lens may be moved together with the X-axis of the donor stage at all times, that is, the optical stage may be omitted, and the homogenizer (homogenizer), the field lens, the mask, and the projection lens may be all disposed on the X-axis of the donor stage or fixed on a separate stage.
The mask is held on a mask stage having at least a W axis that moves in the X axis direction together with the field lens, and preferably, the mask stage may further have: a U axis in the Y axis direction, a V axis moving in the Z axis direction, an R axis as a rotation axis in the YZ plane, a TV axis adjusting an inclination with respect to the V axis, and a TU axis adjusting an inclination with respect to the U axis. In order to suppress the injection of heat generated by the irradiation of the mask with the laser light, an aperture mask may be provided on the front side of the mask, the aperture mask having a pattern one turn larger than the mask pattern and having a double mask structure in cooperation with the mask.
The Y-axis (Yd) of the donor table and the Y-axis (Yr) of the acceptor table are moved at the same or different speeds so as to maintain a gap between the donor substrate and the acceptor substrate in the transfer process in a fixed state and maintain an extremely high degree of parallelism. Further, according to the above-described configurations of the moving method of each stage group, the stage supporting them, and the like, the moving mechanism of the acceptor substrate is limited to the Y axis and separated from the moving mechanism of the donor substrate, so that the mutual influence due to the interference and vibration of the moving regions of the substrates with each other can be suppressed, and the size increase and the size reduction of the acceptor substrate can be coped with.
The second invention is based on the first invention, wherein the X-axis of the donor table is placed on the stage 1, and the optical table is placed on the X-axis of the donor table.
Fig. 1A shows a main structural part (side view) of the transfer device of the second invention. Fig. 1B shows a case where Xd is placed on Xo and moved from the state of fig. 1A (side view). Fig. 1C shows a case where Xo moves from the state of fig. 1B on Xd (side view). Fig. 1D shows a top view of fig. 1C.
The third invention is the same as the first invention, wherein the optical table is placed on the platform 1, and the X-axis of the donor table is suspended from the platform 1.
Fig. 2A shows a main structural part (side view) of the transfer device of the third invention. Fig. 2B shows a case (side view) where Xd and Xo move the same distance on G1 (Xd is suspended and provided at G1) from the state of fig. 2A. Fig. 2C shows a case where only Xo moves from the state of fig. 2B on G1 (side view).
The fourth invention is the same as the first invention, wherein the X-axis of the donor table is mounted on the stage 1, and the optical table is placed on a stage 3 (third stage) different from both the stage 1 and the stage 2.
Here, "provided on the platform 1" includes a state of being placed on the platform 1 and a state of being suspended from the platform 1, but is not limited to these states.
A fifth aspect of the present invention is the first aspect of the present invention, wherein a rotation adjustment mechanism for finely adjusting an installation angle in an XY plane between the X axis of the donor table and the table 1 is provided, and a rotation adjustment mechanism for finely adjusting an installation angle in an XY plane between the X axis of the donor table and the Y axis of the donor table is provided.
Here, fig. 3A shows an example of a rotation adjusting mechanism (RP) provided between the X-axis (Xd) of the donor table and the stage 1 (G1). In fig. 3A, the left side shows a plan view, and the right side shows a side view as viewed from the X-axis direction. In addition, in the plan view, the holes in one row located on the outer side are used for fixing to G1, and have "play" (margin ) in order to have a rotation adjustment function. Further, in the plan view, the two rows of holes located on the inner side are holes for passing screws for fixing the linear guides of RP and Xd. In addition, although the side having the "play" may be used as the hole for the linear guide of Xd, when two linear guides are fixed independently and in parallel, there is a possibility that the difficulty of the installation process increases.
On the other hand, fig. 3B shows an example of RP provided between Xd and the Y-axis (Yd) of the donor table suspended from Xd. In plan view, the two outer rows of holes are used for fixation to Xd and have "play" in order to have a rotational adjustment function. Further, two rows of holes aligned in the Y-axis direction are used for fixation to Yd.
Further, as the RP provided between G1 and Xd, an RP different from the aforementioned RP may be used. For example, a fulcrum (a pivot axis in the Z-axis direction) for adjusting the rotation of the RP on which Xd is placed in the XY plane with respect to G1 (not shown) is provided on a contact surface between the RP and G1, and a force point with respect to the fulcrum is provided on a side surface (a vertical surface) of the RP that is sufficiently distant from the fulcrum. A large screw that pushes horizontally toward the force point is provided at G1 near the force point. Similarly, a large screw is provided on the opposite side of the RP. This allows the RP on which Xd is placed to rotate in the XY plane about the fulcrum with respect to G1 in the order of [ μ rad ].
A sixth aspect of the present invention is the second aspect of the present invention, wherein a rotation adjustment mechanism for finely adjusting an installation angle in the XY plane between the X axis of the donor table and the table 1, a rotation adjustment mechanism for finely adjusting an installation angle in the XY plane between the X axis of the donor table and the optical table, and a rotation adjustment mechanism for finely adjusting an installation angle in the XY plane between the X axis of the donor table and the Y axis of the donor table are provided.
As the above RP, for example, RP between G1 and Xd shown in fig. 3A, RP between Xd and Xo shown in fig. 3C, and RP between Xd and Yd shown in fig. 3B can be used.
A seventh aspect of the present invention is the third aspect of the present invention, wherein a rotation adjustment mechanism for finely adjusting an installation angle in an XY plane between the X axis of the donor table and the stage 1, a rotation adjustment mechanism for finely adjusting an installation angle in an XY plane between the optical table and the stage 1, and a rotation adjustment mechanism for finely adjusting an installation angle in an XY plane between the X axis of the donor table and the Y axis of the donor table are provided.
Here, for example, the RPs shown in fig. 3A are used as the rotation adjusting mechanisms between Xo and G1 and Xd and G1, respectively, and the RP shown in fig. 3B is used as the rotation adjusting mechanisms between Xd and Yd. The former RP has holes through which the screws for fixing the linear guides Xo and Xd are passed, and the installation angles in the XY plane of the RP and G1 to which the linear guides for the respective stages are fixed are adjusted using the "play" of the holes.
An eighth aspect of the present invention is the fourth aspect of the present invention, wherein a rotation adjustment mechanism for finely adjusting an installation angle in an XY plane between the X axis of the donor table and the stage 1, a rotation adjustment mechanism for finely adjusting an installation angle in an XY plane between the optical table and the stage 3, and a rotation adjustment mechanism for finely adjusting an installation angle in an XY plane between the X axis of the donor table and the Y axis of the donor table are provided.
A ninth invention is the pulsed laser device according to any one of the first to eighth inventions, wherein the pulsed laser device is an excimer laser.
The oscillation wavelength of the excimer laser is mainly 193[ nm ], 248[ nm ], 308[ nm ] or 351[ nm ], and is appropriately selected from the materials of the light absorption layer and the light absorption characteristics of the object.
A tenth aspect of the present invention is the laser processing apparatus of the ninth aspect, wherein the transfer device includes a pulse shutter that cuts off an arbitrary pulse train of the laser pulses emitted from the pulsed laser device.
It is known that a pulse oscillation laser apparatus receives a trigger signal from the programmable multi-axis control apparatus and starts oscillation, but the energy of a pulse after a certain number of times or for a certain time after oscillation thereof is unstable to such an extent that it cannot be used due to application. Therefore, in order to eliminate the unstable pulse group, it is necessary to eliminate the pulse group by a mechanical shutter operation. Specifically, for example, in the case of an excimer laser oscillating at 1[ kHz ], the time window between adjacent laser pulses is about 1[ ms ], and a high-speed shutter function capable of moving (traversing) a certain distance within that time is required. The fixed distance depends on the spatial size of the laser beam at the position where the shutter is operated, and if the distance is 5[ mm ], the required shutter operation speed is 5[ m/s ], and it is necessary to use an ultra-high speed shutter for moving the optical element into and out of the optical path using a voice coil (voice coil). Even if the size of the space is reduced by a shaping optical system or the like, and the distance that the shutter member traverses can be shortened, the laser beam is likely to be damaged by the energy density of the laser beam.
An eleventh aspect of the present invention is the multi-axis programmable controller according to the tenth aspect of the present invention, wherein the multi-axis programmable controller has a function of controlling at least a Y-axis of the receptor table and a Y-axis of the donor table at the same time, and the multi-axis programmable controller further includes means for correcting a movement position error of the table using two-dimensional distribution correction value data prepared in advance for correcting the movement position error.
For example, the position correction of the acceptor substrate and the donor substrate at the time of irradiation with the laser light is performed using the two-dimensional distribution correction value data information in the simulated XY plane of Xd or Xo in combination with any one of Yr and Yd. The factors of the corrected position error include pitching, yawing, and rolling that are caused by the movement of each table, but are not limited to these. The parameters for determining the correction value include the moving speeds of Yr and Yd and their ratios, in addition to the position information of each station.
A twelfth aspect of the present invention is the eleventh aspect, wherein a high magnification camera for monitoring the position of the donor substrate is provided on the Z-axis of the acceptor stage, or a high magnification camera for monitoring the position of the acceptor substrate is provided on the X-axis of the donor stage or a portion moving together with the X-axis of the donor stage, or on the optical stage or a portion moving together with the optical stage.
Here, the "portion that moves along with the X axis of the donor table" also includes Yd suspended from Xd. In the present invention, the parallelism between the Y-axes and the parallelism between the X-axes of the respective stages and the perpendicularity between the Y-axes and the X-axes of the respective stages are important parameters for the accuracy of the left and right transfer positions. In the inspection of parallelism and perpendicularity at the time of assembling each stage, the amount of deviation in the direction perpendicular thereto is monitored with a high-magnification, high-resolution camera with respect to the moving distance of each stage holding the alignment substrate, and the perpendicularity is adjusted with the use of the rotation adjusting mechanism. In the adjustment of the parallelism between Yr and Yd, two stages are moved synchronously (in parallel) by the same distance, and whether or not the position of an alignment mark image (cross mark or the like) subjected to pattern matching attached to the opposing stage is still without being moved is observed by a high magnification camera mounted on one stage. In this case, the movement in the Y-axis direction indicates that the synchronization of Yd and Yr is abnormal, and the movement in the X-axis direction indicates an adjustment error of the parallelism of Yd and Yr.
In addition, a CCD camera is generally used as a high magnification camera. The magnification and the like depend on the transfer position accuracy, but as an example, in the case of detecting the displacement amount of the order of [ μ rad ], that is, in the case of detecting the displacement amount of 1[ μm ] with respect to the stage moving distance of 1[ m ], a camera having a resolution of 1[ μm ] and a magnification of about 20 to 50 times can be used
A thirteenth invention is the one according to the twelfth invention, wherein the donor table and the acceptor table include a gap sensor that measures a gap between the surface (lower surface) of the donor substrate and the surface of the acceptor substrate.
Here, the gap sensor is a sensor in which height sensors provided on the donor table and the acceptor table are combined, respectively, the height sensor provided on the donor table measures the distance to the acceptor substrate, the height sensor provided on the acceptor table measures the distance to the donor substrate, and the gap between the donor substrate and the acceptor substrate is calculated based on the two measured values and the height information of the height sensors.
A fourteenth aspect of the present invention is the thirteenth aspect of the present invention, wherein the position measuring device using a laser interferometer is provided for each of the Y axis of the acceptor stage and the Y axis of the donor stage.
As the structure of the laser interferometer for the Y axis (Yr) of the receptor stage, a structure including: a mirror (Ic) held on a portion that moves together with Yr; an Interferometer Laser (IL) fixed to a stage, such as the stage 2(G2), which is not easily affected by vibration or the like due to the movement; and 1/4 wavelength plates (not shown). As the reflector, a three-axis cube corner prism (retro-reflector) is suitably used, and the position (height) as close to the receptor substrate as possible is preferable. An outline is shown in FIG. 5A (the Z-axis and the theta-axis of the donor table group and the acceptor table are not shown).
Yr is controlled by a programmable multi-axis control device based on position information from the linear encoder, and the laser interferometer is used for correction as the linear encoder and correction when the gear ratio is finely adjusted in gear mode operation of Yr and Yd, which will be described later.
As the structure of the laser interferometer for the Y axis (Yd) of the donor table, a structure including: ic, held on a surface moving together with Yd suspended from Xd; IL, immobilized on Xd in the same manner; and 1/4 wavelength plates (not shown). Here, as the reflector, a three-axis pyramid prism (retro-reflector) is suitably used, and a position (height) as close to the donor substrate as possible is preferable. An overview is represented by fig. 5B. (the stage group is not shown), and the detection method of any one of the interferometer laser beams may be selected as appropriate depending on the required accuracy of the transfer position.
A fifteenth invention is the transfer device of the fourteenth invention, wherein the transfer means includes a confocal light beam profiler having a focal plane at a position conjugate to a position where the pattern of the mask is demagnified projected and imaged by the projection lens.
The confocal beam profiler can monitor the position and spatial intensity distribution of the laser beam projected onto the donor substrate surface in real time and with the same accuracy as the imaging resolution of the reduction imaging optical system, and the imaging state thereof.
A sixteenth aspect of the present invention is a method of using the transfer apparatus of the thirteenth aspect of the present invention, wherein the gap sensor is used to measure a bending amount of the donor substrate in advance together with XY position information of the donor substrate, and the gap between the donor substrate and the acceptor substrate is corrected while adjusting the bending amount using a Z axis (Zr) passing through the acceptor stage or a Z axis stage of the projection lens based on two-dimensional distribution data of the bending amount obtained by the measurement.
A seventeenth aspect of the present invention is a method of adjusting a transfer apparatus according to any one of the fifth to eighth aspects of the present invention, the method of adjusting the transfer apparatus being a method of adjusting parallelism between a Y-axis of the receptor stage and a Y-axis of the donor stage in a process of assembling the transfer apparatus, the method of adjusting the transfer apparatus comprising, with respect to the Y-axis of the receptor stage on which linearity is adjusted together with a Z-axis and a θ -axis of the receptor stage, the steps of: adjusting the perpendicularity of the Y axis of the receptor table and the X axis of the donor table through a rotation adjusting mechanism positioned between the platform 1 and the X axis of the donor table; synchronously moving a Y-axis of a donor table and a Y-axis of a receptor table, which are suspended from an X-axis of the donor table with verticality adjusted, in parallel, and observing alignment marks on the Y-axis of the opposite donor table by a high-magnification camera mounted on a part moving together with the Y-axis of the receptor table; and adjusting the parallelism of the Y-axis of the acceptor table and the Y-axis of the donor table by a rotation adjusting mechanism between the X-axis of the donor table and the Y-axis of the donor table based on the observation result.
In addition, in order to confirm and adjust the parallelism of Yd and Yr with high accuracy, it is preferable that the high magnification camera is located at the highest position among the tables, plates, and the like placed on Yr, and is attached to a portion having high rigidity.
The present invention can realize the enlargement of the receptor substrate of the transfer device and the reduction of the tact time while maintaining the high transfer position accuracy on the basis of the high synchronous position accuracy of the donor substrate and the receptor substrate.
Drawings
Fig. 1A shows a main structural part (side view) of the transfer device of the present invention. (second invention)
FIG. 1B shows a state in which the X-axis of the donor table is moved from the state of FIG. 1A while the upper optical table is placed (side view).
Fig. 1C shows a state in which the optical table is moved on the X-axis of the donor table from the state of fig. 1B (side view).
Fig. 1D is a top view of fig. 1C.
Fig. 2A shows a main structural part (side view) of the transfer device of the present invention. (third invention)
Fig. 2B shows a case where the X-axis of the donor table and the optical table are moved by the same distance on the stage 1 from the state of fig. 2A (side view).
Fig. 2C shows a case where only the X-axis of the donor table is moved on the stage 1 from the state of fig. 2B (side view).
Fig. 3A shows an example of a rotation adjustment mechanism for use between G1 and Xd.
Fig. 3B shows an example of a rotation adjustment mechanism for use between Xd and Yd.
Fig. 3C shows an example of a rotation adjustment mechanism for use between Xd and Xo.
Fig. 4 shows a range in which the donor table should be moved according to the size of the acceptor substrate.
Fig. 5A shows a case where a Y-axis laser interferometer is provided with a receptor stage.
Fig. 5B shows a case where a Y-axis laser interferometer of the donor table is provided.
Fig. 6 shows an example of a pattern formed on a mask.
Fig. 7 shows a case of a transfer process using a plurality of mask patterns.
Fig. 8 shows the monitoring of the confocal beam profiler.
Fig. 9A shows the first irradiation in the transfer step.
Fig. 9B shows the second irradiation in the transfer step.
Fig. 9C shows the third irradiation in the transfer step.
Fig. 10 shows a transmission through the gear ratio 1: 2 the case of the acceptor substrate after one scan.
Fig. 11 shows the case of X-axis step scanning of the donor table.
FIG. 12 shows a synchronization position error when the Y-axis of the receptor stage and the Y-axis of the donor stage are translated in parallel.
Fig. 13A shows the first irradiation in the transfer step using the donor substrate in a matrix form.
Fig. 13B shows the second irradiation in the transfer step using the donor substrate in a matrix form.
Fig. 13C shows the third irradiation in the transfer step using the donor substrate in a matrix form.
Description of the reference numerals
Substrate for adjustment of AD donor table
Substrate for adjusting AR receptor table
BP confocal light beam profiler
CCD high magnification camera
D Donor substrate
F field lens
G basic platform
G11 platform 11
G12 platform 12
G2 platform 2
G3 platform 3
H-shaping optical system
Pyramid prism for Ic laser interferometer
Laser for IL laser interferometer
LS laser
M mask
Pl projection lens
R acceptor substrate
RP rotation adjusting mechanism
S object
TE telescope
X-axis of Xd donor table
Xo optical bench (X axis)
Y-axis of Yd donor table
Switching stage for a Yl projection lens and camera
Y-axis of Yr receptor table
Z-axis table of ZL projection lens
Z axis of Zr receptor table
Theta axis of theta d donor table
Theta axis of theta receptor table
Detailed Description
Hereinafter, a specific structure of the transfer device of the present invention will be described in detail with reference to the accompanying drawings.
[ example 1]
In this example 1, the following example is shown: on a donor substrate having a size of 200X 200[ mm ], a layered (solid film) object formed in one piece with a light absorbing layer interposed therebetween was transferred to a receiver substrate having a size of 400X 400[ mm ] in a total of 144 million matrix shapes of 12000X 12000 in a vertical direction as a unit object having a shape of 10X 10[ mu ] m. The 144 million transfer positions have a positional accuracy of + -1 [ mu ] m, and the pitch between the vertical and horizontal directions is 30[ mu ] m.
First, fig. 1A shows a main structural part of a transfer device relating to the implementation of the present invention. In addition, illustration of the laser device, the control device, and other monitors is omitted in fig. 1A, and the X-axis, Y-axis, and Z-axis directions are as shown in the drawing. The stage 1(G1), the stage 11(G11), the stage 12(G12), and the stage 2(G2) are all stone stages using granite. Further, the base platform (G) uses iron having high rigidity. The present embodiment is an embodiment based on the configuration of the sixth invention.
The configuration of the transfer apparatus according to example 1 of the present invention will be described in order of the transfer order of the laser beam to be emitted from the laser apparatus to the object on the donor substrate. First, the laser device used in this example 1 is an excimer laser having an oscillation wavelength of 248 nm. The spatial distribution of the emitted laser light is about 8X 24[ mm ], and the beam divergence angle is 1X 3[ mrad ]. All the above are described (vertical x horizontal), and the numerical value is FWHM.
The excimer laser has a plurality of specifications, and there are some excimer lasers in which the emitted laser light is long in the longitudinal direction (the longitudinal direction and the transverse direction are inverted) depending on the output, the repetition frequency, the beam size, the beam divergence angle, and the like, but there are a plurality of excimer lasers that can be used in embodiment 1 by adding, omitting, or changing the design of the optical system. Although the laser device depends on its size, it is generally installed on a base (laser stage) different from the base of the stage group on which the transfer device is installed.
The light emitted from the excimer laser enters the telescope optical system and is transmitted to the shaping optical system in front of the telescope optical system. Here, as shown in fig. 1A, the shaping optical system is held on an optical table (Xo) provided on an X-axis (Xd) of a donor table that moves a donor substrate so that an optical axis is along the X-axis. The laser beam just before entering the shaping optical system is adjusted by a telescope optical system so as to be substantially parallel at any position within the X-axis movement range of the donor table. Therefore, the laser light always enters the shaping optical system at substantially the same size and at the same angle (perpendicularly) regardless of the movement in the X-axis direction of Xd and/or Xo. In this example 1, the dimension is about 25X 25[ mm ] (vertical X horizontal).
In the shaping optical system (H) of embodiment 1, two sets of uniaxial cylindrical lens arrays are combined into two sets of right angles in a plane perpendicular to the optical axis direction. The configuration is as follows: the lens array at the front stage in each group forms an image on the mask (M) by the lens array at the rear stage and a condensing lens (not shown) positioned behind the lens array.
The laser light having passed through the shaping optical system is incident on the mask through a field lens (F) constituting an image-side telecentric reduction projection optical system in combination with a projection lens (Pl). The size of the laser beam on the mask is 1 × 50[ mm ] (FWHM), and the size of the region with the uniformity of the spatial intensity distribution within + -5% is maintained at 0.5 × 45[ mm ] or more.
The mask is fixed on the mask table, which, as mentioned above, has a total of six axis adjustment mechanisms, the six axes being: a W axis moving in an X axis direction together with the field lens, a U axis in a Y axis direction, a V axis moving in a Z axis direction, an R axis as a rotation axis in a YZ plane, a TV axis adjusting an inclination with respect to the V axis, and a TU axis adjusting an inclination with respect to the U axis.
The mask of this example 1 used a mask in which a pattern was drawn (formed) on a synthetic quartz plate by chrome plating. Fig. 6 schematically shows this. In this mask, a window portion (a) which is not chrome-plated and is white transmits laser light, and a colored portion (b) which is chrome-plated blocks the laser light. One window has a shape (a) of 50X 50[ mu ] m, and 300 windows are arranged in the X-axis direction (one row) at intervals of 150[ mu ] m, which are continuous 43.85[ mm ] in total. The surface to be chrome-plated is the laser light emitting side, and an antireflection film for 248nm is provided on the incident side. Further, instead of chromium plating, aluminum vapor deposition or a dielectric multilayer film may be used.
In the case of switching the transfer process using a plurality of patterns on one mask, if the size of the laser beam irradiated from the shaping optical system onto the mask is within the range and the movable range of the mask stage, a mask on which different patterns are drawn can be used.
In fig. 7, when a transfer process of scanning the donor substrate (D) at the same speed or in a reciprocating manner is used a plurality of times during one scan of the receptor substrate (R) (including a pause in the middle), the mask pattern shown in fig. 6 may be a multi-line pattern instead of one line (although the irradiation is performed intermittently and selectively by laser irradiation on the mask pattern, the irradiation is shown as a 3 × 2-line matrix in fig. 7). This enables the use of a donor substrate having a smaller size than the acceptor substrate.
The laser light having passed through the mask pattern is changed in its transmission direction by an epi-mirror to be directed vertically downward (-Z direction) and is incident on a projection lens. The projection lens is provided with an antireflection film for 248nm and has a reduction magnification of 1/5. Details are shown in table 1 below.
[ Table 1]
The laser beam emitted from the projection lens is incident from the back surface of the donor substrate, and is projected accurately to a predetermined position of the light absorption layer formed on the front surface (lower surface) thereof with the reduced size of 1/5 of the mask pattern. Here, the predetermined position in the XY plane is determined after adjustment is performed by the X axis (Xd), the Y axis (Yd), and the θ axis (θ d) of the donor table with reference to an alignment mark or the like previously attached to the donor substrate.
In order to adjust the image plane of the mask pattern generated by the projection lens to focus on the boundary surface between the surface of the donor substrate and the light absorption layer, the positions of the Z-axis stage (Zl) of the projection lens and the W-axis of the mask stage on which the field lens (F) is placed are adjusted. Further, although a function (Z-axis stage) for adjusting the donor substrate in the Z-axis direction can be added, it is necessary to consider a decrease in accuracy of the transfer position due to an increased load applied to the X-axis (Xd) of the donor stage.
When adjusting the imaging position of the boundary surface between the donor substrate surface and the light absorbing layer, real-time monitoring using a confocal Beam Profiler (BP) having a plane in a conjugate relationship with the image plane at the focal plane is effective. Fig. 8 shows a case of this adjustment screen. In this example 1, the spatial intensity distribution of the laser light that is reduced and imaged on the boundary surface between the donor substrate surface and the light absorbing layer is monitored in real time and with high resolution.
The above is the function realized by the apparatus configuration of embodiment 1 relating to the transmission of the pulse laser light emitted from the laser apparatus.
Next, how to mechanically realize parallelism between the Y-axis (Yr) of the acceptor stage and the Y-axis (Yd) of the donor stage in the apparatus of the present invention using the structure of this example 1 will be briefly described.
Each stage as shown in fig. 1A, the X-axis (Xd) of the donor stage is placed on the stone stage 1(G1), and the optical stage (Xo) is placed thereon. The receptor table group (Yr, θ r, Zr) was placed on the stone surface plate 2 (G2). Furthermore, the whole is built on a base platform (G). Further, the rotation adjusting mechanisms (RP) are provided between G1 and Xd, Xo and Xd, and Xd and Yd (illustration is omitted).
In addition, in order to adjust the perpendicularity and parallelism of the axes of the respective stages, the adjustment substrate AD held on the donor stage is used instead of the donor substrate, and the adjustment substrate AR placed on the acceptor stage is used instead of the acceptor substrate. Lines indicating an X axis (alignment line X) and a Y axis (alignment line Y) that are accurately perpendicular to each other are drawn as alignment lines on any of the adjustment substrates, and marks are also added at predetermined positions (intervals).
1) Parallelism of YR to AR (Y) (perpendicularity of YR to AR (X))
In order to adjust the parallelism of the Y-axis (Yr) of the receptor table and the alignment line Y on the adjustment substrate AR, the adjustment substrate AR placed on the Z-axis (Zr) of the receptor table is observed by a high-magnification CCD camera fixed on the optical table (Xo) or on a Z-axis table for a projection lens provided on the optical table (Xo). The Yr axis is moved by 400[ mm ], and the theta axis (theta r) of the receptor stage is adjusted so that the deviation of the alignment line Y in the X-axis direction is within 1[ mu ] m. In addition, the moving distance of the stage at this time is within the range of the effective stroke of the stage, and the amount of deviation to be allowed varies depending on the required transfer accuracy. (the same applies hereinafter)
2) Parallelism of AR (X) and Xd (perpendicularity of YR and Xd)
Next, using the alignment line X of the adjustment substrate AR adjusted in the above manner, perpendicularity of the X axis (Xd) of the donor stage and the Y axis (Yr) of the receptor stage is adjusted while observing through a high-magnification CCD camera which is also fixed on the optical stage (Xo) or a Z-axis stage for a projection lens provided on the optical stage (Xo). The Xd axis is moved by 400[ mm ], and the mounting angles of the two are adjusted by the rotation adjusting mechanism between G1 and Xd so that the deviation of the alignment line X in the Y axis direction is within 1[ mu ] m, and the mounting angles of G1 and Xd, that is, Xd with respect to Yr are adjusted.
3) Parallel of AR (X) and Xo (perpendicularity of YR and Xo, parallelism of Xd and Xo)
Using the alignment line X of the adjustment substrate AR adjusted in the above manner, the parallelism of the optical table (Xo) and the X axis (Xd) of the donor table is adjusted while observing by a high-magnification CCD camera fixed to the optical table (Xo) or a Z axis table for a projection lens provided to the optical table (Xo). The Xo axis is moved by 200[ mm ], and the parallelism of the optical table (Xo) with respect to the X axis (Xd) of the donor table is adjusted by a rotation adjusting mechanism between the Xo axis and the alignment line X so that the deviation of the alignment line X in the Y axis direction is within 0.5[ mu ] m.
4) Parallelism of Yd and AD (Y)
In order to adjust the parallelism of the Y axis (Yd) of the donor table and the alignment line Y on the adjustment substrate AD, the adjustment substrate AD held on the θ axis (θ d) of the donor table is observed by a high-magnification CCD camera fixed on the optical table (Xo) or on a Z-axis table for a projection lens provided on the optical table (Xo). The Yd axis is moved by 200[ mm ], and the adjustment is performed by using the theta axis (theta d) of the donor table so that the deviation of the alignment line Y in the X-axis direction is within 0.5[ mu ] m.
5) Parallelism of AD (X) to Xo (parallelism of AD (X) to Xd, perpendicularity of Xd to Yd)
In order to adjust the perpendicularity between the X-axis (Xd) of the donor table and the Y-axis (Yd) of the donor table, the alignment line X on the adjustment substrate AD is observed by a high-magnification CCD camera fixed to an optical table (Xo) whose parallelism with the X-axis (Xd) of the donor table is adjusted or a Z-axis table for a projection lens provided to the optical table (Xo). The optical table (Xo) is moved by 200[ mm ], and the perpendicularity to the Y-axis (Yd) of the donor table suspended on the X-axis (Xd) of the donor table is adjusted by a rotation adjusting mechanism between the optical table (Xo) and the alignment line (X) so that the deviation of the alignment line (X) in the Y-axis direction is within 0.5[ mu ] m.
6) Parallelism of AD (Y) and YR (parallelism of Yd and YR)
Finally, in order to confirm the parallelism of the Y-axis (Yd) of the donor stage and the Y-axis (Yr) of the receptor stage, a high-magnification CCD camera was mounted on the Y-axis (Yd) of the donor stage, and the alignment line Y of the alignment substrate AR placed on the opposite receptor stage was observed. At this time, the adjustment substrate AD is removed in advance. The X-axis (Xd) of the donor table is shifted to enable the high-magnification CCD camera to view either end of the receptor table. Next, the Y-axis (Yd) of the donor table was moved by 400[ mm ], and it was confirmed whether or not the amount of deviation of the alignment line Y in the X-axis direction was within 1[ μm ]. In order to similarly confirm the other end of the receptor table, Xd is moved to the other end, Yd is moved by 400[ mm ], and it is confirmed that the deviation of the alignment line Y in the X-axis direction is within 1[ μm ]. In addition, the position change of the alignment mark can also be observed by translating Yd and Yr.
In addition, when the high-power CCD camera is attached to the Y-axis (Yd) of the donor table, the high-power CCD camera may come into contact with the position of the X-axis of the donor table and the shape (opening) of the stone surface plate 1. In this case, the alignment line Y of the alignment substrate AD can be observed and the amount of displacement in the X axis direction can be confirmed by moving the Y axis (Yr) of the receptor stage by 200[ mm ] without mounting the high-magnification CCD camera on Yd but on the Z axis (Zr) of the receptor stage.
Since the stone surface plate 1(G1) and the stone surface plate 2 support each table independently, and Yd is suspended from Xd provided on G1, the parallelism of Yr and Yd cannot be adjusted directly, but can be adjusted in the order of [ μ rad ] step by step as described above. In addition, since errors in parallelism (perpendicularity) are accumulated in the adjustment steps in the order of 1) to 6), it is desirable to perform adjustment so as to suppress the allowable deviation amount in the initial stage as small as possible. In the adjustment steps 1) to 6), although the adjustment of the parallelism and perpendicularity of each stage in the XY plane is described, it is necessary to perform adjustment of other axes (X axis and Y axis).
Next, referring to fig. 9A to 9C, scanning of the donor substrate and the acceptor substrate at the time of transfer in example 1 is described. Here, the plan views of fig. 9A to 9C are views in which the operator is positioned on the left side of these views and the donor substrate (D) and the acceptor substrate (R) are scanned back and forth with respect to the operator.
First, the amount of curvature of the donor substrate adsorbed and disposed on the θ axis (θ d) of the donor table is measured on the entire surface of the donor substrate, and is plotted as two-dimensional data together with positional information. This information is used as a correction amount of the Z axis (Zr) of the acceptor stage corresponding to the X axis (Xd) and the Y axis (Yd) of the donor stage moving in the transfer step.
In the following description, for convenience of explanation, a predetermined position on the front side of the left eye of the receptor substrate (R) and the donor substrate (D) as viewed from the operator is defined as the origin of each substrate. The positions of the optical table (Xo) and the receptor table (Yr, θ r) when the laser beam is irradiated to the origin of the receptor substrate are defined as the origin, respectively. In the donor substrate, the positions of the donor tables (Xd, Yd, θ d) when the laser beam (LS) is irradiated are also defined as the respective origins. However, the origin of each stage is not limited to one end of the stroke range, and is a position of a stroke portion that is moved for the subsequent transfer process and the removal of the substrate.
Fig. 9A shows a case where the first pulse of the laser beam (LS) is applied to the donor substrate (D) and the acceptor substrate (R) located at the in-situ positions. Here, both a side view (side view) and a top view (top view) are illustrated. The dashed dotted line indicates that the laser beam is irradiated to the object (S) by the reduction projection optical system, and the light absorption layer (not shown) in the region of 10 × 10[ μm ] that has received the irradiation absorbs the laser beam, and generates a shock wave by ablation (ablation), whereby the object in the same region is transferred to the opposite receptor substrate. Although three objects are shown, in the case of example 1, a total of 300 objects are transferred to the receptor substrate at a time.
In example 1, the laser device oscillated at 200[ Hz ] and was transferred by one irradiation, and therefore the receptor stage (YR) was scanned in the-Y direction at a speed of 6[ mm/s ] without stopping the receptor substrate until the next irradiation position.
On the other hand, the Y-axis (Yd) of the donor table scans in the same-Y direction at a speed of 3[ mm/s ] without stopping the donor substrate while synchronizing with the position of the Y-axis (Yr) of the acceptor table. That is, the moving speed ratio (gear ratio) of Yd to Yr is 1: 2. fig. 9B shows the case of the second irradiation after each substrate is moved.
The positions of Yr and Yd are synchronized by causing the two tables to perform a gear pattern synchronization operation using a gear command of the table system with Yr as a reference (master) and Yd as a slave (slave). A programmable multi-axis control device is used in the control system.
Furthermore, for determining the gear ratio of the gear command, the actual measurement of the table position measured by the laser interferometer is used. A pyramid prism (Ic) is mounted, and a He-Ne laser (IL) having a wavelength of 632.8[ nm ] and a light receiving unit (not shown in FIG. 5A) are provided on the stone surface plate 2 (or an equivalent stationary position), and the pyramid prism (Ic) moves together with the moving stage of YR and constitutes a laser interferometer in the vicinity of the receptor substrate. Similarly, a pyramid prism is attached to the side surface of the movable stage of Yd, and the laser light for interferometer and a light receiving unit (not shown in fig. 5B) are provided on Xd. Thus, accurate position synchronization of each station is realized.
As described above, each stage is accelerated from the position immediately before the origin in such a manner that the position of the origin is already stable and the stage is moving at a constant velocity. During this acceleration time and the time until the stage reaches the origin, the laser pulse needs to be cut off so that the donor substrate is not irradiated with the laser light. Therefore, the programmable multi-axis control device transmits the external oscillation trigger signal or the operation start trigger signal of the high-speed shutter and the stage drive signal to the laser device with high accuracy.
Fig. 9C shows the case of the third irradiation. The following can be seen from the figure: the moving distance of the acceptor substrate (R) is twice as long as the moving distance of the donor substrate (D). Thereafter, the acceptor substrate and the donor substrate are also moved.
When the donor substrate is scanned 180[ mm ] in the-Y direction and finished, and similarly when the acceptor substrate is scanned 360[ mm ] in the-Y direction and finished, oscillation of the laser device is temporarily stopped, or irradiation of the laser light is cut off with a high-speed shutter. By scanning at this distance, 300 objects arranged in the X-axis direction were transferred in 12000 lines in total of 360 ten thousand in the Y-axis direction of the receptor substrate. Fig. 10 shows this case.
During the dwell time, both the Y-axis (Yr) of the acceptor stage and the Y-axis (Yd) of the donor stage return to the origin. (but considering the acceleration distance for the next scan. the same applies hereinafter.) on the other hand, the X-axis (Xd) of the donor table is returned to a position of-9 [ mm ] compared to the previous origin. Further, the transfer process is started again from a new area. The above operation is repeated below.
Fig. 11 shows a case where after the end of the step (step) of-9 [ mm ] × 20 times of Xd, the current time returns from the previous origin (shown by a broken line) to the position of 15[ μm ] in the-X direction (shown by a solid line), and the same operation is started with this point as a new origin. Thereafter, the step operations of Y-axis scanning (180[ mm ] (Yd) and 360[ mm ] (YR)) of the two stages and-9 [ mm ]. times.20 times of Xd were repeated. Thus, the laser beam is irradiated to the region not subjected to the irradiation of the laser beam (the region to be irradiated with the next laser beam (LS) is shown by a one-dot chain line in the figure) during the first 180[ mm ] scan of Xd (-20 step moves of 9[ mm ]), and the object on the donor substrate can be transferred to the receptor substrate more without waste.
The approximate processing time was 2400[ s ] for 360[ mm ]/6[ mm/s ] × 40[ times ]. In addition, the time period does not include the time period required for the Y-axis (Yr) of the subject table to move by the acceleration/deceleration and the time period required for the Y-axis to return to the origin for each Y-axis scan. Further, by increasing the repetition rate of the excimer laser to 1[ kHz ], the processing time can be shortened at 1/5.
FIG. 12 shows the error in the synchronized position of the two stages when the apparatus of example 1 is configured to move the receptor stage at a movement speed of 150[ mm/s ] by a distance of 400[ mm ] with the Y-axis (YR) of the receptor stage as a reference (master) and to move the donor stage at a movement speed of 75[ mm/s ] with the Y-axis (Yd) of the donor stage as a slave (slave) in a synchronized manner by a distance of 200[ mm ]. Specifically, the horizontal axis represents the difference (Δ Ydr — δ Yr) between the position information obtained from the linear encoder on Yr serving as the reference (master) and the position information measured by the laser interferometer, and the error amount (δ Yr) between the position information obtained from the linear encoder on Yd serving as the slave (slave) that moves synchronously at the speed 1/2 and the position information measured by the laser interferometer, as the elapsed time corresponding to the moving speed of the receptor table. As can be seen from the results, a positional synchronization accuracy within. + -. 1[ mu ] m was achieved within a moving distance of 400 mm.
As described above, although the transfer pattern (pattern) of the object to the receptor substrate in example 1 is transferred in a matrix of 10 × 10[ μm ] at intervals of 30[ μm ], if the intervals are set to 60[ μm ], for example, it is possible to transfer four receptor substrates with one donor substrate.
[ example 2]
In example 2, unlike example 1 in which the object on the donor substrate surface is in a single layer state, the following example is used: a total of 144 million objects each having a shape of 10X 10[ mu ] m and a spacing of 15[ mu ] m formed in a matrix on a donor substrate having the same size of 200X 200[ mm ] are transferred to a receptor substrate having a size of 400X 400[ mm ] in the same matrix at a density of 1/2 of the donor substrate, that is, at a spacing of 30[ mu ] m.
Finally, the arrangement of the objects to be transferred to the receptor substrate is the same as in example 1, but the difference is that in example 2, the objects are also arranged on the donor substrate in the same manner at twice the density, and are transferred to the receptor substrate with a positional accuracy of ± 1[ μm ]. In this case, the accuracy of the positional synchronization between the Y-axis (Yd) of the donor table and the Y-axis (Yr) of the acceptor table is more strictly required than in example 1.
Fig. 13A to 13C show the case from the case of irradiating the first pulse of the laser beam (LS) to the case of irradiating the donor substrate (D) and the acceptor substrate (R) located at the in-situ positions to the case of irradiating the same for the third time, as in example 1.
[ example 3]
In example 3, the method of transferring the object on the surface of the donor substrate to the acceptor substrate is the same as in example 1 or example 2. On the other hand, the method of adjusting the parallelism between the Y axes and the parallelism between the X axes of the respective stages and the perpendicularity between the Y axes and the X axes differs from the embodiment. That is, the adjustment method described in example 1 is as follows: the adjusting steps 1) to 6) are performed in order to adjust the parallelism of the Y-axis (Yr) of the acceptor stage and the Y-axis (Yd) of the donor stage, whereas in example 3, the parallelism of Yr and Yd is adjusted at an early stage of the adjusting step.
1) Straightness of Yr, θ r, Zr
This adjustment step is an adjustment step which is a common premise with the above-described embodiments 1 and 2. The Y axis (Yr) of the receptor table provided on the stone surface plate 2(G2) and the θ axis (θ r) provided thereon, and the same Z axis (Zr) and the straightness of the support of the receptor substrate (the straightness with respect to the Z axis which is the vertical direction when the horizontal plane is taken as the XY plane) are adjusted using a laser interferometer or the like. Basically, after the adjustment, the adjustment that may affect the verticality of the receptor table set is not performed, and all the adjustments of the other tables are performed with reference to, for example, the uppermost surface of the receptor table set.
2) Parallelism of YR to AR (Y) (perpendicularity of YR to AR (X))
In the same manner as in the adjustment step 1) of example 1, the parallelism between the Y axis (Yr) of the receptor stage and the alignment line Y on the adjustment substrate AR is adjusted. Thereby, the perpendicularity of Yr to the alignment line X is also adjusted. In addition, when the alignment line or the alignment mark obtained by direct drawing or the like on Yr is used without using the adjustment substrate AR, the adjustment step 1) may be omitted.
3) Parallelism of AR (X) and Xd (perpendicularity of YR and Xd)
Next, the alignment line X of the alignment substrate AR is observed by a high-magnification CCD camera provided on an optical stage (Xo) placed on the X-axis (Xd) of the donor stage. The position of the high-magnification CCD camera in the Z-axis direction is determined by the design of the projection optical system, but in embodiment 3, a Z-axis stage (Zl) holding a projection lens is fixed near the position of the projection lens (Pl). The Xd is moved by 400[ mm ], and the mounting angle of the Xd with respect to the stone table 1, that is, the perpendicularity of the Xd with respect to YR, is adjusted by a rotation adjusting mechanism so that the deviation of the alignment line X in the Y-axis direction is within 0.3[ mu ] m.
4) Degree of parallelism in YZ plane of Yr and Yd
In the description of embodiment 1, the description of the adjustment step of the other axis systems (X axis and Y axis) is omitted, and here, the adjustment step of the parallelism in the YZ plane, which is the X axis system, will be briefly described. The lower surface of the donor table in the Y-axis (Yd) is observed using a height sensor provided on the Z-axis (Zr) or other portion of the acceptor table. The Yr and Yd are synchronously moved (moved in parallel) at the same time over the same distance of 200[ mm ] or more, and the change in the measurement value (distance between Zr and Yd) of the gap sensor is observed. The pad is inserted between the rotation adjusting mechanism between Xd and Yd or Xd so that the change is within 5[ mu ] m or within a sufficiently small range from the depth of focus of the image formed by the projection lens, and the parallelism in the YZ plane between Yr and Yd is adjusted.
5) Degree of parallelism of Yr and Yd
An alignment mark for pattern matching provided on the lower surface of Yd was observed using a high-magnification CCD camera provided at Zr or other locations. When the position of an alignment mark image (cross mark or the like) having the same distance and pattern matching is moved in the X-axis direction by synchronously moving Yr and Yd (parallel movement), adjustment is performed using a rotation adjustment mechanism provided between Xd and Yd to correct this. In addition, instead of the alignment mark, an alignment line Y of the alignment substrate AD mounted on the Y axis of the donor table may be used.
6) Perpendicularity of Yr and Xo
The alignment line X of the adjustment substrate AR adjusted in perpendicularity to the Y axis (Yr) of the subject table by the adjustment step 1) is observed by a high magnification CCD camera provided on the optical table (Xo). The Xo is moved by 400[ mm ], and the mounting angle of Xo with respect to Xd is adjusted by a rotation adjusting mechanism provided therebetween so that the deviation amount of the alignment line X in the Y-axis direction is within 0.3[ mu ] m.
[ example 4]
Fig. 2A shows the main structural part of the transfer device of this embodiment 4. The seventh invention of the present invention is an example of the basic structure. In fig. 2A to 2C, the laser device, the control device, and other monitors are not shown (all of which are the same as in example 1), and the X-axis, Y-axis, and Z-axis directions are shown in the drawings. The donor substrate, the receptor substrate, and the object to be transferred, which are used in example 4, are arranged on the donor substrate and are arranged after being transferred to the receptor substrate in the same manner as example 2.
The case of an optical system in which a pulsed laser beam is emitted from an excimer laser apparatus and irradiated onto a transfer target on a donor substrate is the same as example 1 except for the portions generated by the difference in the structures of the respective stage groups shown in fig. 1A and 2A, as described below. That is, in the case of the transfer apparatus of the sixth invention shown in fig. 1A to 1C, the X axis (Xd) of the donor table is arranged on the stone platform 1(G1) in order and the optical table (Xo) is arranged thereon, whereas in the case of the transfer apparatus of the seventh invention shown in fig. 2A to 2C, the construction of these table groups is different in that: xo was placed on G1 and Xd was suspended below G1.
The exit light from the excimer laser enters the telescope optical system and propagates toward the shaping optical system in front of it. As shown in fig. 2A, the above-described shaping optical system is disposed in parallel with the optical axis thereof on an optical table (Xo) that moves in the X-axis direction. Furthermore, Xo is placed on a granite stone surface plate 1(G1), and a rotation adjusting mechanism (RP) is provided therebetween. Here, Xo is at right angles to the Y-axis (Yr) of the acceptor stage placed on a different stone platform 2(G2) than G1 and parallel to the X-axis (Xd) of the donor stage. The laser beam before entering the shaping optical system is adjusted to substantially the same shape (substantially 25 × 25[ mm ] (vertical × horizontal, FWHM)) regardless of the movement of Xo by the telescope optical system.
The X-axis (Xd) of the donor table is suspended below G1, and the Y-axis (Yd) of the donor table is also suspended. Further, there is a rotational adjustment mechanism between them. The case where Xo and Xd are moved the same distance with respect to G1 is represented by a side view in fig. 2B. This allows the position in the X-axis direction with respect to Yd to be changed without changing the relative positions of Xo and Xd on the X-axis. Fig. 2C shows a side view of the case where only Xo moves relative to G1. Thereby, the relative positions on the X-axis of Xd and Xo can be changed.
As in example 1, the details of the field lens (F), the mask (M), and the projection lens (Pl) as other reduced projection optical systems are the same, and the laser light emitted from the projection lens is incident from the back surface of the donor substrate and is accurately projected toward the transfer object formed on the surface (lower surface) thereof with the reduced size of 1/5 of the pattern drawn on the mask. In addition, the image formation on the donor substrate surface was performed by a confocal beam profiler in the same manner as in example 1.
Based on the mask pattern that is reduced and projected onto the transfer target disposed on the surface of the donor substrate as described above, when the transfer target is transferred onto the opposing receptor substrate, the method of scanning the donor substrate and the receptor substrate and the method of transferring the transfer target onto the receptor substrate are the same as those in fig. 6, 10, 11, and 13A to 13C, and the positional synchronization accuracy of the movement of the Y-axis (Yr) of the receptor stage and the Y-axis (Yd) of the donor stage is the same as that in fig. 12 described in example 1.
Note that the method of adjusting the parallelism of the Y axes and the parallelism of the X axes of the respective stages and the perpendicularity of the respective Y axes and the X axes is the same as in example 3. That is, the perpendicularity between Yr and the X axis (Xd) of the donor table suspended from the stone surface plate 1(G1) was observed by a high magnification CCD camera fixed to the Z axis (Zr) of the receptor table, using the Y axis (Yr) of the receptor table subjected to linearity adjustment as a reference for adjustment, and adjustment was performed by a rotation adjustment mechanism (RP) between G1 and Xd. The parallelism between the Y axis (Yd) and Yr of the donor table suspended on the adjusted Xd was observed by the same high-magnification CCD camera, and the adjustment was performed by the RP between Xd and Yd. Finally, the perpendicularity of the optical bench (Xo) and Yr was observed by a high magnification CCD moving together with Xo, and adjusted by RP between G1 and Xo.
[ Industrial Applicability ]
The present invention can be used as a display manufacturing apparatus.
Claims (17)
1. A transfer device for transferring an object to a receptor substrate moving while facing a donor substrate by irradiating the object with a pulsed laser beam from the back surface of the donor substrate to selectively peel off the object,
the transfer device is characterized in that,
the transfer device includes:
a pulsed laser device;
a telescope that converts the pulsed laser light emitted from the laser device into parallel light;
a shaping optical system that shapes the spatial intensity distribution of the pulse laser that has passed through the telescope into a uniform distribution;
a mask through which the pulsed laser beam shaped by the shaping optical system passes in a predetermined pattern;
a field lens located between the shaping optical system and the mask;
a projection lens for projecting the laser beam passing through the pattern of the mask onto the surface of the donor substrate;
a mask stage holding the field lens and the mask;
an optical stage holding the shaping optical system, the mask stage, and the projection lens;
a donor table for holding the donor substrate in an orientation in which a back surface of the donor substrate is an incident side of the laser beam;
a receptor stage holding the receptor substrate; and
a programmable multi-axis control device having a trigger output function and a stage control function for the pulse laser oscillation,
the receptor table has a Y axis when a horizontal plane is taken as an XY plane, a Z axis in a vertical direction, and a theta axis in the XY plane,
the donor table having an X-axis, a Y-axis, and a theta-axis,
the projection lens is held on the optical table together with a Z-axis table for the projection lens,
the telescope, the shaping optical system, the field lens, the mask, and the projection lens constitute a reduction projection optical system that reduces and projects a pattern of the mask onto a surface of the donor substrate,
the X-axis of the donor table is set on a platform 1,
the Y-axis of the receptor table is arranged on a platform 2 different from the platform 1,
the Y-axis of the donor table is suspended on the X-axis of the donor table.
2. The transfer device of claim 1,
the X-axis of the donor table is placed on the platform 1,
the optical table is placed on the X-axis of the donor table.
3. The transfer device of claim 1,
the optical bench is placed on the platform 1,
the X-axis of the donor table is suspended on the platform 1.
4. The transfer device of claim 1,
the X-axis of the donor table is mounted on the platform 1,
the optical bench is placed on a platform 3 different from both the platform 1 and the platform 2.
5. The transfer apparatus according to claim 1, wherein a rotation adjusting mechanism for finely adjusting an arrangement angle in an XY plane between the X-axis of the donor table and the table 1, and a rotation adjusting mechanism for finely adjusting an arrangement angle in an XY plane between the X-axis of the donor table and the Y-axis of the donor table are provided.
6. The transfer apparatus according to claim 2, wherein a rotation adjusting mechanism for finely adjusting an arrangement angle in an XY plane therebetween is provided between the X-axis of the donor table and the table 1, a rotation adjusting mechanism for finely adjusting an arrangement angle in an XY plane therebetween is provided between the X-axis of the donor table and the optical table, and a rotation adjusting mechanism for finely adjusting an arrangement angle in an XY plane therebetween is provided between the X-axis of the donor table and the Y-axis of the donor table.
7. The transfer apparatus according to claim 3, wherein a rotation adjusting mechanism for finely adjusting an arrangement angle in an XY plane therebetween is provided between the X-axis of the donor table and the stage 1, a rotation adjusting mechanism for finely adjusting an arrangement angle in an XY plane therebetween is provided between the optical table and the stage 1, and a rotation adjusting mechanism for finely adjusting an arrangement angle in an XY plane therebetween is provided between the X-axis of the donor table and the Y-axis of the donor table.
8. The transfer apparatus according to claim 4, wherein a rotation adjusting mechanism for finely adjusting an arrangement angle in an XY plane therebetween is provided between the X-axis of the donor table and the stage 1, a rotation adjusting mechanism for finely adjusting an arrangement angle in an XY plane therebetween is provided between the optical table and the stage 3, and a rotation adjusting mechanism for finely adjusting an arrangement angle in an XY plane therebetween is provided between the X-axis of the donor table and the Y-axis of the donor table.
9. The transfer device of any one of claims 1 to 8 wherein the pulsed laser device is an excimer laser.
10. The transfer device of claim 9, wherein the transfer device comprises a pulsed shutter that cuts off any pulse train of laser pulses emitted from the excimer laser device.
11. The transfer device according to claim 10, wherein the programmable multi-axis control device has a function of controlling at least a Y-axis of the receptor table and a Y-axis of the donor table at the same time, and includes means for correcting a movement position error of the table using two-dimensional distribution correction value data prepared in advance for correcting the movement position error.
12. The transfer device of claim 11,
a high-magnification camera that monitors the position of the donor substrate is provided on the Z-axis of the acceptor station,
or a high magnification camera for monitoring the position of the acceptor substrate is provided on the X-axis of the donor table or a portion moving together with the X-axis of the donor table, or on the optical table or a portion moving together with the optical table.
13. The transfer device of claim 12, wherein the donor table and the acceptor table include a gap sensor that measures a gap between the surface of the donor substrate and the surface of the acceptor substrate.
14. The transfer device according to claim 13, characterized by comprising position measuring means using a laser interferometer as a Y-axis for the acceptor stage and a Y-axis for the donor stage, respectively.
15. The transfer device of claim 14, wherein the transfer device comprises a confocal beam profiler having a focal plane at a location conjugate to a location at which the pattern of the mask is demagnified projected and imaged by the projection lens.
16. A use method of a transfer device is characterized in that,
the transfer device of claim 13,
the amount of curvature of the donor substrate is measured in advance together with XY position information of the donor substrate by using the gap sensor, and the gap between the donor substrate and the acceptor substrate is corrected by using adjustment performed by a Z-axis of the acceptor stage or a Z-axis stage of the projection lens based on two-dimensional distribution data of the amount of curvature obtained by the measurement.
17. A method of adjusting a transfer apparatus according to any one of claims 5 to 8, wherein the transfer apparatus is the transfer apparatus, and the method of adjusting the transfer apparatus is the method of adjusting the parallelism between the Y-axis of the acceptor stage and the Y-axis of the donor stage in the step of assembling the transfer apparatus,
the method for adjusting the transfer device includes the following steps in sequence based on the Y axis of the receptor table, wherein the straightness of the Y axis of the receptor table is adjusted together with the Z axis and the theta axis of the receptor table:
adjusting the perpendicularity of the Y axis of the receptor table and the X axis of the donor table through a rotation adjusting mechanism positioned between the platform 1 and the X axis of the donor table;
synchronously moving a Y-axis of the donor table and a Y-axis of the receptor table, which are suspended from an X-axis of the donor table with the verticality adjusted, in parallel, and observing an alignment mark on the Y-axis of the donor table, which is opposed to the Y-axis, by a high-magnification camera mounted on a portion that moves together with the Y-axis of the receptor table; and
based on the observation result, the parallelism of the Y-axis of the acceptor stage and the Y-axis of the donor stage is adjusted by a rotation adjusting mechanism between the X-axis of the donor stage and the Y-axis of the donor stage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410036703.3A CN117715492A (en) | 2018-06-20 | 2018-06-26 | Transfer device, transfer method, mask and manufacturing method of display |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-116692 | 2018-06-20 | ||
| JP2018116692 | 2018-06-20 | ||
| PCT/JP2018/024113 WO2019244362A1 (en) | 2018-06-20 | 2018-06-26 | Lift device and method for using same |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410036703.3A Division CN117715492A (en) | 2018-06-20 | 2018-06-26 | Transfer device, transfer method, mask and manufacturing method of display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112272966A true CN112272966A (en) | 2021-01-26 |
| CN112272966B CN112272966B (en) | 2024-02-02 |
Family
ID=68983359
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410036703.3A Pending CN117715492A (en) | 2018-06-20 | 2018-06-26 | Transfer device, transfer method, mask and manufacturing method of display |
| CN201880094255.5A Active CN112272966B (en) | 2018-06-20 | 2018-06-26 | Transfer device, method of use and adjustment method |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410036703.3A Pending CN117715492A (en) | 2018-06-20 | 2018-06-26 | Transfer device, transfer method, mask and manufacturing method of display |
Country Status (3)
| Country | Link |
|---|---|
| CN (2) | CN117715492A (en) |
| TW (5) | TWI784911B (en) |
| WO (1) | WO2019244362A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113782650A (en) * | 2021-09-07 | 2021-12-10 | 苏州奕格飞半导体技术有限公司 | Wafer laser stripping device and method |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023002555A1 (en) * | 2021-07-20 | 2023-01-26 | 信越化学工業株式会社 | Scanning-type reduction projection optical system and laser machining apparatus using same |
| JP7255000B2 (en) * | 2021-07-20 | 2023-04-10 | 信越化学工業株式会社 | Defect removal method, lift method, photomask and lift system |
| JP7490848B2 (en) | 2022-06-15 | 2024-05-27 | 信越化学工業株式会社 | Laser processing method, photomask and laser processing system |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999027569A1 (en) * | 1997-11-22 | 1999-06-03 | Nikon Corporation | Aligner, exposure method and device manufacturing method |
| CN1227150A (en) * | 1998-02-27 | 1999-09-01 | 三菱电机株式会社 | Laser processing device |
| JP2003229258A (en) * | 2002-01-30 | 2003-08-15 | Eastman Kodak Co | Manufacturing method of organic electroluminescent display device |
| CN1453636A (en) * | 2002-04-25 | 2003-11-05 | 精工爱普生株式会社 | Producing method of electronic apparatus and producing apparatus thereof |
| KR20070107528A (en) * | 2006-05-03 | 2007-11-07 | 삼성에스디아이 주식회사 | Laser irridation apparatus, laser induced thermal imaging apparatus comprising the apparatus and fabrication method of oled array substrate using the apparatus |
| JP2009199856A (en) * | 2008-02-21 | 2009-09-03 | Sony Corp | Organic thin film manufacturing device and method |
| WO2009110202A1 (en) * | 2008-03-07 | 2009-09-11 | 株式会社ニコン | Moving device and exposure device |
| KR20100062595A (en) * | 2008-12-02 | 2010-06-10 | 엘지디스플레이 주식회사 | Laser induced thermal imaging apparatus and fabricating method of oled |
| JP2013020768A (en) * | 2011-07-08 | 2013-01-31 | Ulvac Japan Ltd | Laser transfer device |
| KR20130078141A (en) * | 2011-12-30 | 2013-07-10 | 엘아이지에이디피 주식회사 | Tray for donor film |
| US20140132751A1 (en) * | 2012-11-12 | 2014-05-15 | Samsung Display Co., Ltd. | Laser induced thermal imaging apparatus and laser induced thermal imaging method |
| US20140333911A1 (en) * | 2013-05-10 | 2014-11-13 | Samsung Display Co., Ltd. | Liti mask and laser irradiation device including the same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101741343B1 (en) * | 2004-02-04 | 2017-05-29 | 가부시키가이샤 니콘 | Exposure apparatus, exposure method, and device producing method |
| KR100635579B1 (en) * | 2004-12-20 | 2006-10-17 | 삼성에스디아이 주식회사 | laser induced thermal imaging apparatus, laser induced thermal imaging method using the apparatus and fabrication method of OLED using the apparatus |
| US10252507B2 (en) * | 2013-11-19 | 2019-04-09 | Rofin-Sinar Technologies Llc | Method and apparatus for forward deposition of material onto a substrate using burst ultrafast laser pulse energy |
| KR102078294B1 (en) * | 2016-09-30 | 2020-02-17 | 코닝 인코포레이티드 | Apparatus and method for laser machining transparent workpieces using non-axisymmetric beam spots |
-
2018
- 2018-06-26 CN CN202410036703.3A patent/CN117715492A/en active Pending
- 2018-06-26 WO PCT/JP2018/024113 patent/WO2019244362A1/en active Application Filing
- 2018-06-26 CN CN201880094255.5A patent/CN112272966B/en active Active
- 2018-06-27 TW TW111119187A patent/TWI784911B/en active
- 2018-06-27 TW TW112145274A patent/TW202412360A/en unknown
- 2018-06-27 TW TW112111310A patent/TWI827492B/en active
- 2018-06-27 TW TW111131169A patent/TWI801309B/en active
- 2018-06-27 TW TW107122157A patent/TWI768072B/en active
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999027569A1 (en) * | 1997-11-22 | 1999-06-03 | Nikon Corporation | Aligner, exposure method and device manufacturing method |
| CN1227150A (en) * | 1998-02-27 | 1999-09-01 | 三菱电机株式会社 | Laser processing device |
| JP2003229258A (en) * | 2002-01-30 | 2003-08-15 | Eastman Kodak Co | Manufacturing method of organic electroluminescent display device |
| CN1453636A (en) * | 2002-04-25 | 2003-11-05 | 精工爱普生株式会社 | Producing method of electronic apparatus and producing apparatus thereof |
| JP2003318372A (en) * | 2002-04-25 | 2003-11-07 | Seiko Epson Corp | Method and apparatus of manufacturing electronic device |
| KR20070107528A (en) * | 2006-05-03 | 2007-11-07 | 삼성에스디아이 주식회사 | Laser irridation apparatus, laser induced thermal imaging apparatus comprising the apparatus and fabrication method of oled array substrate using the apparatus |
| JP2009199856A (en) * | 2008-02-21 | 2009-09-03 | Sony Corp | Organic thin film manufacturing device and method |
| WO2009110202A1 (en) * | 2008-03-07 | 2009-09-11 | 株式会社ニコン | Moving device and exposure device |
| KR20100062595A (en) * | 2008-12-02 | 2010-06-10 | 엘지디스플레이 주식회사 | Laser induced thermal imaging apparatus and fabricating method of oled |
| JP2013020768A (en) * | 2011-07-08 | 2013-01-31 | Ulvac Japan Ltd | Laser transfer device |
| KR20130078141A (en) * | 2011-12-30 | 2013-07-10 | 엘아이지에이디피 주식회사 | Tray for donor film |
| US20140132751A1 (en) * | 2012-11-12 | 2014-05-15 | Samsung Display Co., Ltd. | Laser induced thermal imaging apparatus and laser induced thermal imaging method |
| CN103811679A (en) * | 2012-11-12 | 2014-05-21 | 三星显示有限公司 | Laser induced thermal imaging apparatus and laser induced thermal imaging method |
| US20140333911A1 (en) * | 2013-05-10 | 2014-11-13 | Samsung Display Co., Ltd. | Liti mask and laser irradiation device including the same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113782650A (en) * | 2021-09-07 | 2021-12-10 | 苏州奕格飞半导体技术有限公司 | Wafer laser stripping device and method |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202234729A (en) | 2022-09-01 |
| WO2019244362A1 (en) | 2019-12-26 |
| CN117715492A (en) | 2024-03-15 |
| TW202301723A (en) | 2023-01-01 |
| TW202329505A (en) | 2023-07-16 |
| TW202002358A (en) | 2020-01-01 |
| CN112272966B (en) | 2024-02-02 |
| TW202412360A (en) | 2024-03-16 |
| TWI827492B (en) | 2023-12-21 |
| TWI768072B (en) | 2022-06-21 |
| TWI784911B (en) | 2022-11-21 |
| TWI801309B (en) | 2023-05-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112272966B (en) | Transfer device, method of use and adjustment method | |
| JP7328408B2 (en) | LIFT DEVICE AND RECEPTOR SUBSTRATE MANUFACTURING METHOD | |
| US20090255911A1 (en) | Laser scribing platform and hybrid writing strategy | |
| KR20080084583A (en) | Laser machining apparatus | |
| JP2006194672A (en) | Stage apparatus | |
| JP7491778B2 (en) | Scanning type reduction projection optical system and laser processing device using the same | |
| JP7382453B2 (en) | How to remove defective parts | |
| JP5489534B2 (en) | Exposure apparatus and device manufacturing method | |
| US8530781B2 (en) | Processing apparatus | |
| CN111992893B (en) | Laser processing device | |
| JP7278868B2 (en) | Laser processing equipment | |
| JP7255000B2 (en) | Defect removal method, lift method, photomask and lift system | |
| JP2014143429A (en) | Exposure device, exposure method, and device manufacturing method | |
| JP7490848B2 (en) | Laser processing method, photomask and laser processing system | |
| TW202317299A (en) | Illumination optical system and laser processing device capable of reducing energy loss by having fly lens itself generating phase difference | |
| KR20240089635A (en) | Processing equipment, processing method and manufacturing method of substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20210607 Address after: Tokyo, Japan Applicant after: Shin-Etsu Chemical Co., Ltd. Address before: Tokyo, Japan Applicant before: MARUBUN Corp. |
|
| REG | Reference to a national code |
Ref country code: HK Ref legal event code: DE Ref document number: 40044825 Country of ref document: HK |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |