KR20100042567A - 비납계 ptc 써미스터용 세라믹 조성물 및 이를 이용하여제조되는 ptc 세라믹 써미스터 - Google Patents
비납계 ptc 써미스터용 세라믹 조성물 및 이를 이용하여제조되는 ptc 세라믹 써미스터 Download PDFInfo
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Abstract
Description
Claims (7)
- Na0.5K0.5NbO3(NKN)가 BaTiO3(BT)의 고용체로 형성되는 하기 [화학식 1]의 세라믹 물질을 포함하는 것을 특징으로 하는 PTC 써미스터용 세라믹 조성물.[화학식 1](1-x)BT-xNKN (0<x≤0.03)
- 제 1 항에 있어서,상기 세라믹 조성물은 Nb2O5 분말로 구비되는 도판트 물질을 더 포함하는 것을 특징으로 하는 PTC 써미스터용 세라믹 조성물.
- 제 2 항에 있어서,상기 Nb2O5는 0 내지 0.05 mol%의 범위 내에서 첨가되는 것을 특징으로 하는 PTC 써미스터용 세라믹 조성물.
- 제 1 항의 세라믹 조성물로 제조되는 것을 특징으로 하는 PTC 세라믹 써미스 터.
- 99.9%의 고순도 BaTiO3(BT)를 마련하는 단계;상기 BaTiO3(BT)에 Na0.5K0.5NbO3(NKN)을 고용체로 형성하여 (1-x)BT-xNKN(0<x≤0.03) 세라믹 원료분말을 제조하는 단계;상기 세라믹 원료분말을 HDPE (High Density Polyethylene) jar에 넣어 증류수를 분산매로 하여 24시간 동안 제 1 볼밀링시키는 단계;상기 제 1 볼밀링 처리된 상기 세라믹 원료분말을 120℃에서 건조시킨 후, 유발에 넣고 분쇄하는 단계;분쇄된 상기 세라믹 원료분말을 알루미나 도가니에 넣고 1000℃에서 2시간 동안 하소하는 단계;하소된 상기 세라믹 원료분말을 HDPE (High Density Polyethylene) jar에 넣어 증류수를 분산매로 하여 24시간 동안 제 2 볼밀링시키는 단계; 및상기 제 2 볼밀링 처리된 상기 세라믹 원료분말을 금형에 넣고 1 ton/cm2의 압력을 가하여 센서 형태로 제조하는 단계를 포함하는 것을 특징으로 하는 PTC 세라믹 써미스터 제조 방법.
- 제 5 항에 있어서,상기 세라믹 원료분말에는 Nb2O5 분말로 구비되는 도판트 물질을 더 첨가하는 것을 특징으로 하는 PTC 세라믹 써미스터 제조 방법.
- 제 6 항에 있어서,상기 Nb2O5는 0 내지 0.05 mol%의 범위 내에서 첨가되도록 하는 것을 특징으로 하는 PTC 세라믹 써미스터 제조 방법.
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Application Number | Priority Date | Filing Date | Title |
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KR20080101779A KR100991391B1 (ko) | 2008-10-16 | 2008-10-16 | 비납계 ptc 써미스터용 세라믹 조성물 및 이를 이용하여제조되는 ptc 세라믹 써미스터 |
PCT/KR2009/003916 WO2010044534A1 (ko) | 2008-10-16 | 2009-07-16 | 무연계 ptc 써미스터용 세라믹 조성물 및 이를 이용하여 제조되는 ptc 세라믹 써미스터 |
CN2009801404461A CN102177105A (zh) | 2008-10-16 | 2009-07-16 | 无铅系ptc热敏电阻陶瓷组合物及ptc陶瓷热敏电阻 |
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KR20080101779A KR100991391B1 (ko) | 2008-10-16 | 2008-10-16 | 비납계 ptc 써미스터용 세라믹 조성물 및 이를 이용하여제조되는 ptc 세라믹 써미스터 |
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Cited By (4)
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CN103137276A (zh) * | 2011-12-01 | 2013-06-05 | 上海市电力公司 | 一种贴片类ptc电阻生产工艺 |
CN104129993A (zh) * | 2014-07-10 | 2014-11-05 | 上海大学 | 一种降低KNbO3基PTCR材料烧结温度的方法 |
KR20160092365A (ko) * | 2015-01-27 | 2016-08-04 | 삼성전기주식회사 | 유전체 자기 조성물, 유전체 재료 및 이를 포함하는 적층 세라믹 커패시터 |
US9601275B1 (en) * | 2015-10-28 | 2017-03-21 | Samsung Electro-Mechanics Co., Ltd. | Dielectric ceramic composition and electronic device using the same |
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CN102745986B (zh) * | 2012-07-26 | 2014-03-12 | 陕西科技大学 | 一种限流开关型无铅ptc陶瓷材料及其制备方法 |
CN102745984B (zh) * | 2012-07-26 | 2014-08-27 | 陕西科技大学 | 一种高居里点无铅ptc陶瓷材料及其制备方法 |
CN102745985B (zh) * | 2012-07-26 | 2014-07-02 | 陕西科技大学 | 高居里点无铅ptc陶瓷材料及其制备方法 |
CN116332639A (zh) * | 2022-12-08 | 2023-06-27 | 上海材料研究所有限公司 | 低室温电阻率高升阻比的无铅ptc热敏陶瓷材料及制备方法 |
CN116854461A (zh) * | 2023-06-02 | 2023-10-10 | 中国科学院上海硅酸盐研究所 | 一种低电阻老化率ptc陶瓷材料及其制备方法 |
CN116854462B (zh) * | 2023-07-27 | 2024-05-24 | 东莞市伟杰顺华触控技术有限公司 | 一种热敏电阻材料及其制备方法 |
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JP3397099B2 (ja) | 1997-10-24 | 2003-04-14 | 松下電器産業株式会社 | 誘電体磁器組成物及びその製造方法 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103137276A (zh) * | 2011-12-01 | 2013-06-05 | 上海市电力公司 | 一种贴片类ptc电阻生产工艺 |
CN104129993A (zh) * | 2014-07-10 | 2014-11-05 | 上海大学 | 一种降低KNbO3基PTCR材料烧结温度的方法 |
CN104129993B (zh) * | 2014-07-10 | 2015-10-07 | 上海大学 | 一种降低KNbO3基PTCR材料烧结温度的方法 |
KR20160092365A (ko) * | 2015-01-27 | 2016-08-04 | 삼성전기주식회사 | 유전체 자기 조성물, 유전체 재료 및 이를 포함하는 적층 세라믹 커패시터 |
US9576730B2 (en) | 2015-01-27 | 2017-02-21 | Samsung Electro-Mechanics Co., Ltd. | Dielectric ceramic composition, dielectric material, and multilayer ceramic capacitor containing the same |
US9601275B1 (en) * | 2015-10-28 | 2017-03-21 | Samsung Electro-Mechanics Co., Ltd. | Dielectric ceramic composition and electronic device using the same |
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