KR20100016783A - Organic light emitting display and manufacturing method for the same - Google Patents

Abstract

PURPOSE: An organic light emitting display and a manufacturing method for the same are provided to prevent reduction of a life expectancy of an organic light emitting layer by minimizing the out gassing emitted from a structure formed within a panel. CONSTITUTION: A contact electrode(116) is connected to a source or a drain. The first electrode(122) is located on a second substrate. A spacer(123a) is located on the first electrode, and protrudes on an area facing the contact electrode. An inorganic layer(124) includes an undercut pattern area exposing a part of the first electrode through a sacrifice layer and an opening area exposing the other part of the first electrode between the sacrifice layer and the spacer. An organic light-emitting layer(125) is classified on the inorganic layer by the undercut pattern area.

Description

Organic Light Emitting Display and Manufacturing Method for the Same

The present invention relates to an organic light emitting display device and a manufacturing method thereof.

An organic light emitting display device used in an organic light emitting display device is a self-light emitting device in which a light emitting layer is formed between two electrodes positioned on a substrate.

In addition, the organic light emitting display device may include a top-emission method, a bottom-emission method, or a dual-emission method according to a direction in which light is emitted. According to the driving method, it is divided into a passive matrix type and an active matrix type.

In the organic light emitting display device, when a scan signal, a data signal, and a power are supplied to a plurality of subpixels arranged in a matrix form, the selected subpixels emit light to display an image.

Some conventional organic light emitting display devices have a structure in which a transistor and an organic light emitting diode are formed on a first substrate and a second substrate, and the first substrate and the second substrate are adhesively sealed with an adhesive member. Such a structure uses spacers for electrical connection between a transistor formed on the first substrate and an organic light emitting diode positioned on the second substrate. In this structure, the cathode is separated by the organic partition.

Meanwhile, in the organic light emitting display device as described above, there are two structures that emit out-gassing, which may have a fatal effect on the lifespan of the organic light emitting layer included in the organic light emitting diode. The first structure corresponds to a spacer formed of organic material. Although the spacers are not located in the opening region, the spacers may directly affect adjacent organic light emitting layers, and may diffuse through the interface and diffuse into the organic light emitting layers, resulting in a decrease in lifespan. The second structure corresponds to a partition formed of organic material. The organic barrier is also not located in the opening area, but the large area occupies the entire panel, which may adversely affect the reliability of the product, such as spacers.

Therefore, the conventional organic light emitting display device should minimize the outgassing emitted from the structure to prevent the life of the organic light emitting layer deterioration and to improve the reliability of the product.

Embodiments of the present invention for solving the above problems of the background art, the organic light emitting display device that can minimize the outgassing emitted from the structure formed in the panel to prevent the life of the organic light emitting layer is reduced and the reliability of the product can be improved And to provide a method of manufacturing the same.

The present invention as a means for solving the above problems, the transistor is located on the first substrate and comprises a gate, a source and a drain; A contact electrode on the transistor and connected to the source or the drain; A first electrode on the second substrate; An organic layer on the first electrode and including a spacer protruding in a region opposite the contact electrode and a sacrificial layer positioned around the spacer; An inorganic layer covering the spacer positioned on the organic layer and having an opening region so that the undercut patterned region is exposed through the sacrificial layer to expose a portion of the first electrode and another portion of the first electrode positioned below the sacrificial layer and the spacer is exposed. ; An organic light emitting layer formed to be separated on the inorganic layer by an undercut patterned region; A second electrode formed to be separated on the organic light emitting layer by an undercut patterned region and electrically connected to the contact electrode by a spacer; And an adhesive member configured to bond and seal the first substrate and the second substrate.

An auxiliary electrode may be positioned above or below the first electrode.

The height of the sacrificial layer may be thicker than the inorganic layer, the organic light emitting layer, and the second electrode.

The transistor includes a gate positioned on the first substrate, a first insulating layer positioned on the gate, an active layer positioned on the first insulating layer, a source and a drain positioned on the active layer, and a source and drain positioned on the first insulating layer. And a second insulating layer, wherein the contact electrode is disposed on the second insulating layer and connected to a source or a drain and positioned in at least one layer.

On the other hand, an embodiment of the present invention, forming a transistor including a gate, a source and a drain on a first substrate; Forming a contact electrode connected to a source or a drain on the transistor; Forming a first electrode on a second substrate; Forming an organic layer on the first electrode, the organic layer including a spacer protruding in a region facing the contact electrode and a sacrificial layer positioned around the spacer; An inorganic layer covering the spacer positioned on the organic layer and having an opening region so that the undercut patterned region is exposed through the sacrificial layer to expose a portion of the first electrode and another portion of the first electrode positioned below the sacrificial layer and the spacer is exposed. Forming a; Forming an organic light emitting layer to be distinguished from each other on the inorganic layer; Forming a second electrode on the organic light emitting layer so as to be distinguished from each other; And forming an adhesive member between the first substrate and the second substrate and sealingly bonding the first substrate and the second substrate, wherein the second electrode is formed by the spacer as the first substrate and the second substrate are bonded and sealed. The present invention provides a method of manufacturing an organic light emitting display device, which is electrically connected to a contact electrode.

The method may further include forming an auxiliary electrode on the upper or lower portion of the first electrode.

The sacrificial layer may be formed to be thicker than the inorganic layer, the organic light emitting layer, and the second electrode.

In the organic layer forming step, the spacer and the sacrificial layer may be simultaneously formed using a halftone mask (HTM) or a graytone mask (GTM).

The first electrode may be formed of an anode including any one of indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), and znO doped aluminum (AZO).

The transistor includes a gate positioned on the first substrate, a first insulating layer positioned on the gate, an active layer positioned on the first insulating layer, a source and a drain positioned on the active layer, and a source and drain positioned on the first insulating layer. And a second insulating layer, wherein the contact electrode is disposed on the second insulating layer and connected to a source or a drain and positioned in at least one layer.

Embodiment of the present invention, there is an effect of providing an organic light emitting display device and a method of manufacturing the same that can minimize the outgassing emitted from the structure formed in the panel to prevent the reduction of the life of the organic light emitting layer and improve the reliability of the product. . In addition, according to the embodiment of the present invention, the undercutting of the sacrificial layer located below the inorganic layer has the effect of giving the efficiency of the process has the effect of improving the production yield.

Hereinafter, with reference to the accompanying drawings, the specific content for the practice of the present invention will be described.

1 illustrates an exemplary subpixel circuit configuration of an organic light emitting display device.

Referring to FIG. 1, the subpixel may include a switching transistor SWTFT having a gate connected to the scan line Scan and one end connected to the data line Data. In addition, the subpixel may include a driving transistor DRTFT having a gate connected to the other end of the switching transistor SWTFT and having one end connected to the second power line VSS. In addition, the subpixel may include a capacitor CST connected between the gate of the driving transistor DRTFT and the second power line VSS. In addition, the subpixel may include an organic light emitting diode OLED having an anode connected to the first power line VDD and a cathode connected to the other end of the driving transistor DRTFT.

In an organic light emitting display device according to an exemplary embodiment of the present invention, a switching transistor (SWTFT), a driving transistor (DRTFT), a capacitor (CST), etc., included in a subpixel are positioned on a first substrate, and an organic light emitting diode, etc., is disposed on a second substrate. It may be formed into a structure located on the substrate.

In the sub-pixel structure, when a data signal and a scan signal are supplied from the data driver and the scan driver, a driving current flows through a spacer connecting the cathode of the organic light emitting diode OLED to the source or drain of the driving transistor DRTFT. The organic light emitting diode (OLED) emits light and can display an image.

Hereinafter, description will be made in more detail with reference to a schematic cross-sectional view.

2 is a schematic cross-sectional view of an organic light emitting display device according to an exemplary embodiment of the present invention.

Referring to FIG. 2, an organic light emitting display device according to an exemplary embodiment of the present invention may include a first substrate 110 and a second substrate 120 facing the first substrate 110. The first substrate 110 and the second substrate 120 may be bonded and sealed by the adhesive member 130.

The first substrate 110 and the second substrate 120 may be selected from those having excellent mechanical strength or dimensional stability as materials for forming the device.

As a material of the first substrate 110 and the second substrate 120, a glass plate, a metal plate, a ceramic plate or a plastic plate (polycarbonate resin, acrylic resin, vinyl chloride resin, polyethylene terephthalate resin, polyimide resin, polyester) Resins, epoxy resins, silicone resins, fluororesins, and the like).

Switching transistors, driving transistors, and capacitors connected to scan wirings, data wirings, and power wirings may be disposed on the first substrate 110, and sources or drains of the organic light emitting diode and the driving transistor may be disposed on the second substrate 120. Spacers to be connected may be located.

Hereinafter, a transistor or the like positioned on the first substrate 110 will be described in more detail.

The gate 111 may be located on the first substrate 110. The gate 111 is any one selected from the group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu). It may be made of one or an alloy thereof.

In addition, the gate 111 may include molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It may be a multilayer made of any one or alloys thereof. In addition, the gate 111 may be a double layer of molybdenum / aluminum-neodymium or molybdenum / aluminum.

The first insulating layer 112 may be positioned on the gate 111. The first insulating layer 112 may be a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or a multilayer thereof, but is not limited thereto.

The active layer 113 may be positioned on the first insulating layer 112. The active layer 113 may include amorphous silicon or polycrystalline silicon crystallized therefrom. Although not shown, the active layer 113 may include a channel region, a source region, and a drain region, and the source region and the drain region may be doped with P-type or N-type impurities. In addition, the active layer 113 may include an ohmic contact layer to lower the contact resistance.

The source 114a and the drain 114b may be positioned on the active layer 113. The source 114a and the drain 114b may be formed of a single layer or multiple layers. When the source 114a and the drain 114b are a single layer, molybdenum (Mo), aluminum (Al), chromium (Cr), Gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) may be made of any one or an alloy thereof.

In addition, when the source 114a and the drain 114b are multiple layers, the double layer of molybdenum / aluminum-neodymium and the triple layer of molybdenum / aluminum / molybdenum or molybdenum / aluminum-neodymium / molybdenum may be used.

The second insulating layer 115 may be positioned on the source 114a and the drain 114b. The second insulating layer 115 may be, but is not limited to, a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or a multilayer thereof. The second insulating film 115 may be a passivation film or a planarization film.

The contact electrode 116 connected to the source 114a or the drain 114b of the transistor may be positioned on the second insulating layer 115. The contact electrode 116 may be positioned in multiple layers like the first contact electrode 116a and the second contact electrode 116b, but may also be positioned in a single layer.

In the above, as an example, the transistor located on the first substrate 110 is a batam gate type. However, the transistor located on the first substrate 110 is not limited thereto and may also be formed as a top gate type.

Hereinafter, an organic light emitting diode or the like positioned on the second substrate 120 will be described in more detail.

The first electrode 122 may be positioned on the second substrate 120. The first electrode 122 may be selected as an anode, and the first electrode 122 selected as the anode may be indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), or AZO (ZnO doped). Transparent materials such as aluminum).

The first electrode 122 includes a spacer 123a protruding from a region facing the contact electrode 116 on the first substrate 110 and a sacrificial layer 123b positioned around the spacer 123a. The organic layer 123 may be located. The organic layer 123 may include an organic material such as benzocyclobutene (BCB) -based resin, acrylic resin, or polyimide resin. Here, the organic layer 123 may serve as a bank layer exposing a part of the first electrode 122.

Meanwhile, the auxiliary electrode 121 may be positioned above or below the first electrode 122, and the auxiliary electrode 121 may be located in an area corresponding to an area in which the sacrificial layer 123b is located. The auxiliary electrode 121 may be formed of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). have.

The undercut patterned area UC and the lower portion between the sacrificial layer 123b and the spacer 123a are disposed on the organic layer 123 to cover the spacer 123a and expose a portion of the first electrode 122 through the sacrificial layer 123b. An inorganic layer 124 having an opening region may be positioned to expose another portion of the first electrode 122 positioned at. The inorganic layer 124 may include an inorganic material such as a silicon oxide film (SiOx), a silicon nitride film (SiNx), or the like.

The organic emission layer 125 may be positioned on the inorganic layer 124. The organic emission layer 125 may include an emission layer that emits red, blue, and green light. The light emitting layer may be composed of two or more layers to emit white light.

The organic emission layer 125 may be formed to be separated on the inorganic layer 124 by the undercut patterned area UC.

The second electrode 126 electrically connected to the contact electrode 116 may be positioned on the organic emission layer 125 by the protruding spacer 123a. The second electrode 126 may be made of an opaque material such as aluminum (Al), aluminum alloy (AlNd), or the like. The second electrode 126 may be formed to be separated on the organic emission layer 125 by the undercut patterned area UC.

On the other hand, when the undercut patterned area UC is formed on the second substrate 120, the organic light emitting layer 125 and the second electrode 126 may serve as sub-tappings without using a reverse tapered partition or mask as in the related art. It may be formed by dividing pixel by pixel.

In addition, when the inorganic layer 124 is formed to cover the spacer 123a and the sacrificial layer 123b disposed on the organic layer 123, the out-gassing problem generated from the organic material may be minimized. The lifespan of the organic light emitting layer 125 may be prevented and the reliability of the product may be improved.

Hereinafter, the hierarchical structure of the organic light emitting diode will be described in more detail.

3 illustrates an example of a hierarchical structure of an organic light emitting diode.

The organic light emitting diode may include a first electrode 122, an organic light emitting layer 125, and a second electrode 126. The organic emission layer 125 may include a hole injection layer 125a, a hole transport layer 125b, an emission layer 125c, an electron transport layer 125d, and an electron injection layer 125e.

The hole injection layer 125a may play a role of smoothly injecting holes. CuPc (cupper phthalocyanine), PEDOT (poly (3,4) -ethylenedioxythiophene), PANI (polyaniline), and NPD (N, N-dinaphthyl) -N, N'-diphenyl benzidine) may be composed of any one or more selected from the group consisting of, but is not limited thereto.

The hole transport layer 125b serves to facilitate the transport of holes, NPD (N, N-dinaphthyl-N, N'-diphenyl benzidine), TPD (N, N'-bis- (3-methylphenyl) -N , N'-bis- (phenyl) -benzidine), s-TAD and MTDATA (4,4 ', 4 "-Tris (N-3-methylphenyl-N-phenyl-amino) -triphenylamine) It may be made of one or more, but is not limited thereto.

The emission layer 125c may include a material emitting red, green, and blue light and may be formed using phosphorescent or fluorescent materials.

When the light emitting layer 125c is red, it includes a host material including carbazole biphenyl (CBP) or mCP (1,3-bis (carbazol-9-yl), and PIQIr (acac) (bis (1-phenylisoquinoline) acetylacetonate Phosphorescent light containing a dopant including any one or more selected from the group consisting of iridium), PQIr (acac) (bis (1-phenylquinoline) acetylacetonate iridium), PQIr (tris (1-phenylquinoline) iridium) and PtOEP (octaethylporphyrin platinum) It may be made of a material, alternatively may be made of a fluorescent material including PBD: Eu (DBM) 3 (Phen) or perylene, but is not limited thereto.

When the emission layer 125c is green, the light emitting layer 125c may include a host material including CBP or mCP, and may be made of a phosphor including a dopant material including Ir (ppy) 3 (fac tris (2-phenylpyridine) iridium). Alternatively, the composition may be made of a fluorescent material including Alq3 (tris (8-hydroxyquinolino) aluminum), but is not limited thereto.

When the emission layer 125c is blue, the light emitting layer 125c may include a host material including CBP or mCP, and may be formed of a phosphor including a dopant material including (4,6-F2ppy) 2Irpic. Alternatively, it may be made of a fluorescent material including any one selected from the group consisting of spiro-DPVBi, spiro-6P, distilbenzene (DSB), distriarylene (DSA), PFO-based polymer and PPV-based polymer, but It is not limited.

The electron transport layer 125d serves to facilitate the transport of electrons, and may be made of any one or more selected from the group consisting of Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq, and SAlq. However, the present invention is not limited thereto.

The electron injection layer 125e serves to facilitate the injection of electrons, and may be Alq3 (tris (8-hydroxyquinolino) aluminum), PBD, TAZ, spiro-PBD, BAlq or SAlq, but is not limited thereto.

Here, the embodiment of the present invention is not limited to FIG. 3, and at least one of the hole injection layer 125a, the hole transport layer 125b, the electron transport layer 125d, and the electron injection layer 125e may be omitted. have.

Hereinafter, a method of manufacturing an organic light emitting display device according to an embodiment of the present invention will be described.

4 to 8 are cross-sectional views illustrating a method of manufacturing an organic light emitting display device according to an embodiment of the present invention.

A method of manufacturing an organic light emitting display device according to an embodiment of the present invention may be as follows.

First, as shown in FIG. 4, a transistor including a gate 111, a source 114a, and a drain 114b is formed on the first substrate 110.

The transistor includes a gate 111 positioned on the first substrate 110, a first insulating layer 112 positioned on the gate 111, an active layer 113 positioned on the first insulating layer 112. And a source 114a and a drain 114b on the active layer 113, and a second insulating layer 115 on the source 114a and the drain 114b.

Next, as shown in FIG. 4, a step of forming a contact electrode 116 connected to the source 114a or the drain 114b on the transistor is performed.

The contact electrode 116 is positioned on the second insulating layer 115 of the transistor and may be connected to the source 114a or the drain 114b. The contact electrode 116 may be formed of at least one layer like the first contact electrode 116a and the second contact electrode 116b.

Next, as shown in FIG. 5, the step of forming the first electrode 122 on the second substrate 120 is performed.

The first electrode 122 formed on the second substrate 120 may be selected as an anode. The first electrode 122 may be formed of any one of indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), and znO doped aluminum (AZO), but is not limited thereto.

Meanwhile, before and after forming the first electrode 122, the forming of the auxiliary electrode 121 may be further performed. The auxiliary electrode 121 may be formed above or below the first electrode 122 and may be formed in a region corresponding to the sacrificial layer to be formed later. The auxiliary electrode 121 may be formed of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). have. Wet etching may be used when the auxiliary electrode 121 is patterned, but is not limited thereto.

Next, as shown in FIG. 5, the spacer 123a protruding from the region facing the contact electrode 116 on the first electrode 122 and the sacrificial layer 123b positioned around the spacer 123a are disposed. Forming an organic layer 123 to be included is performed.

The organic layer 123 disposed on the first electrode 122 may include an organic material such as benzocyclobutene (BCB) resin, acrylic resin, or polyimide resin. Here, the organic layer 123 may serve as a bank layer exposing a part of the first electrode 122.

 The organic layer 123 may be formed as a spacer 123a and a sacrificial layer 123b by etching. However, in the forming of the organic layer 123, the spacer 123a and the sacrificial layer 123b may be simultaneously formed using the halftone mask HTM or the graytone mask GTM.

The sacrificial layer 123b may have a height greater than that of the inorganic layer, the organic light emitting layer, and the second electrode. If the height of the sacrificial layer 123b is formed thicker than that of the inorganic layer, the organic light emitting layer, and the second electrode, a short may not be generated when the organic light emitting layer and the second electrode are formed, and may be formed separately. Assuming that the height of the spacer 123a is 3 to 4 μm, when the spacer 123a is formed at a level of 2 μm or less, a short may not be generated when the organic light emitting layer and the second electrode are formed. .

Next, as shown in FIG. 6, the undercut patterned region UC covers the spacer 123a positioned on the organic layer 123 and exposes a portion of the first electrode 122 through the sacrificial layer 123b. The inorganic layer 124 having the opening region OP is formed to expose another portion of the first electrode 122 positioned below the sacrificial layer 123b and the spacer 123a.

The inorganic layer 124 may include an inorganic material such as a silicon oxide film (SiOx), a silicon nitride film (SiNx), or the like. After the inorganic layer 124 is formed on the organic layer 123, the undercut patterned area UC and the opening area OP may be formed using dry etching, but are not limited thereto.

Meanwhile, after the undercut patterned area UC is formed, the sacrificial layer 123b disposed under the inorganic layer 124 may be completely removed by stripping or dry ashing.

Next, as shown in FIG. 7, the step of forming the organic light emitting layer 125 to be distinguished from each other on the inorganic layer 124 is performed.

When the organic emission layer 125 is formed on the inorganic layer 124, the organic emission layer 125 may be formed to be distinguished on the inorganic layer 124 by the undercut patterned area UC. The organic emission layer 125 may include an emission layer that emits red, blue, and green light. The light emitting layer may be composed of two or more layers to emit white light.

Next, as shown in FIG. 7, a step of forming a second electrode to be distinguished from each other on the organic light emitting layer is performed.

When the second electrode 126 is formed on the organic light emitting layer 125, the second electrode 126 may be formed to be distinguished on the organic light emitting layer 125 by the undercut patterned area UC. The second electrode 126 may be made of an opaque material such as aluminum (Al), aluminum alloy (AlNd), or the like.

Next, as shown in FIG. 8, the adhesive member 130 is formed between the first substrate 110 and the second substrate 120, and the first substrate 110 and the second substrate 120 are bonded and sealed. Carry out the steps.

When the adhesive member 130 is formed between the first substrate 110 and the second substrate 120 and the first substrate 110 and the second substrate 120 are bonded and sealed, the second electrode 126 is formed to protrude. The contact electrode 116 may be electrically connected by the spacer 123a.

Embodiments of the present invention have an effect of providing an organic light emitting display device and a method of manufacturing the same, which can minimize the outgassing emitted from the structure formed in the panel, thereby preventing the life of the organic light emitting layer from deteriorating and improving the reliability of the product. have. In addition, according to the embodiment of the present invention, the undercutting of the sacrificial layer located below the inorganic layer has the effect of giving the efficiency of the process has the effect of improving the production yield.

Although the embodiments of the present invention have been described above with reference to the accompanying drawings, the technical configuration of the present invention described above may be modified in other specific forms by those skilled in the art to which the present invention pertains without changing its technical spirit or essential features. It will be appreciated that it may be practiced. Therefore, the embodiments described above are to be understood as illustrative and not restrictive in all aspects. In addition, the scope of the present invention is shown by the claims below, rather than the above detailed description. Also, it is to be construed that all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts are included in the scope of the present invention.

1 is a diagram illustrating a subpixel circuit configuration of an organic light emitting display device.

2 is a schematic cross-sectional view of an organic light emitting display device according to an embodiment of the present invention;

3 is an exemplary hierarchical structure of an organic light emitting diode.

4 to 8 are cross-sectional views illustrating a method of manufacturing an organic light emitting display device according to an embodiment of the present invention.

<Explanation of symbols on main parts of the drawings>

110: first substrate 111: gate

114a: source 114b: drain

116: contact electrode 120: second substrate

122: first electrode 123a: spacer

123b: sacrificial layer 124: inorganic layer

125: organic light emitting layer 126: second electrode

Claims (10)

A transistor positioned on the first substrate and including a gate, a source, and a drain; A contact electrode on the transistor and connected to the source or the drain; A first electrode on the second substrate; An organic layer on the first electrode, the spacer including a spacer protruding in a region facing the contact electrode and a sacrificial layer positioned around the spacer; An undercut patterned region covering the spacer on the organic layer and exposing a portion of the first electrode through the sacrificial layer and another portion of the first electrode disposed under the sacrificial layer and the spacer An inorganic layer having an opening region so as to; An organic light emitting layer formed to be separated on the inorganic layer by the undercut patterned region; A second electrode formed to be separated on the organic light emitting layer by the undercut patterned region and electrically connected to the contact electrode by the spacer; And And an adhesive member for bonding and sealing the first substrate and the second substrate. The method of claim 1, Above or below the first electrode, An organic light emitting display device comprising an auxiliary electrode positioned thereon. The method of claim 1, The height of the sacrificial layer, And an inorganic layer, the organic light emitting layer, and the second electrode. The method of claim 1, The transistor, The gate positioned on the first substrate, the first insulating layer positioned on the gate, the active layer positioned on the first insulating layer, the source, the drain, and the source positioned on the active layer. And a second insulating layer on the drain; And the contact electrode is disposed on the second insulating layer and connected to the source or the drain and positioned in at least one layer. Forming a transistor including a gate, a source, and a drain on the first substrate; Forming a contact electrode connected to the source or the drain on the transistor; Forming a first electrode on a second substrate; Forming an organic layer on the first electrode, the organic layer including a spacer protruding in a region facing the contact electrode and a sacrificial layer positioned around the spacer; An undercut patterned region covering the spacer on the organic layer and exposing a portion of the first electrode through the sacrificial layer and another portion of the first electrode disposed under the sacrificial layer and the spacer Forming an inorganic layer having an opening region so as to be possible; Forming an organic light emitting layer on the inorganic layer to be distinguished from each other; Forming a second electrode on the organic light emitting layer so as to be distinguished from each other; And Forming an adhesive member between the first substrate and the second substrate and sealingly sealing the first substrate and the second substrate, wherein the first substrate and the second substrate are bonded and sealed to form the adhesive member. 2. The method of manufacturing an organic light emitting display device, wherein the two electrodes are electrically connected to the contact electrode by the spacers. The method of claim 5, Above or below the first electrode, A method of manufacturing an organic light emitting display device further comprising the step of forming an auxiliary electrode. The method of claim 5, The height of the sacrificial layer, And forming the inorganic layer, the organic light emitting layer, and the second electrode thicker than the inorganic layer. The method of claim 5, In the organic layer forming step, Using halftone mask (HTM) or graytone mask (GTM) And forming the spacers and the sacrificial layer at the same time. The method of claim 5, The first electrode, A method of manufacturing an organic light emitting display device, characterized in that it is formed of an anode made of any one of indium tin oxide (ITO), indium zinc oxide (IZO), indium tin zinc oxide (ITZO), and AZO (ZnO doped aluminum). The method of claim 5, The transistor, The gate positioned on the first substrate, the first insulating layer positioned on the gate, the active layer positioned on the first insulating layer, the source, the drain, and the source positioned on the active layer. And a second insulating layer on the drain; And the contact electrode is disposed on the second insulating layer and connected to the source or the drain and positioned in at least one layer.

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