KR20090097897A - 광원 - Google Patents

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Publication number
KR20090097897A
KR20090097897A KR1020097013257A KR20097013257A KR20090097897A KR 20090097897 A KR20090097897 A KR 20090097897A KR 1020097013257 A KR1020097013257 A KR 1020097013257A KR 20097013257 A KR20097013257 A KR 20097013257A KR 20090097897 A KR20090097897 A KR 20090097897A
Authority
KR
South Korea
Prior art keywords
sealing member
substrate
light emitting
phosphor
light source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020097013257A
Other languages
English (en)
Korean (ko)
Inventor
사토시 시다
히로유키 나이토
다카아리 우에모토
Original Assignee
파나소닉 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 파나소닉 주식회사 filed Critical 파나소닉 주식회사
Publication of KR20090097897A publication Critical patent/KR20090097897A/ko
Withdrawn legal-status Critical Current

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8582—Means for heat extraction or cooling characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8583—Means for heat extraction or cooling not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • General Engineering & Computer Science (AREA)
  • Led Device Packages (AREA)
KR1020097013257A 2007-01-11 2008-01-10 광원 Withdrawn KR20090097897A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007003881 2007-01-11
JPJP-P-2007-003881 2007-01-11

Publications (1)

Publication Number Publication Date
KR20090097897A true KR20090097897A (ko) 2009-09-16

Family

ID=39387265

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097013257A Withdrawn KR20090097897A (ko) 2007-01-11 2008-01-10 광원

Country Status (7)

Country Link
US (1) US8410501B2 (enExample)
EP (1) EP2104797B1 (enExample)
JP (1) JP5296690B2 (enExample)
KR (1) KR20090097897A (enExample)
CN (1) CN101578473B (enExample)
TW (1) TW200837925A (enExample)
WO (1) WO2008084878A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5768435B2 (ja) * 2010-04-16 2015-08-26 日亜化学工業株式会社 発光装置
DE102010033092A1 (de) 2010-08-02 2012-02-02 Osram Opto Semiconductors Gmbh Optoelektronisches Leuchtmodul und Kfz-Scheinwerfer
US9373606B2 (en) * 2010-08-30 2016-06-21 Bridgelux, Inc. Light-emitting device array with individual cells
JP2013201355A (ja) * 2012-03-26 2013-10-03 Toshiba Lighting & Technology Corp 発光モジュール及び照明装置
CN203277485U (zh) 2012-05-29 2013-11-06 璨圆光电股份有限公司 发光装置、用于形成多方向出光的发光二极管芯片及其蓝宝石基板
US10048434B2 (en) * 2012-11-08 2018-08-14 Sharp Kabushiki Kaisha Backlight device and liquid-crystal display device
US9236366B2 (en) * 2012-12-20 2016-01-12 Intel Corporation High density organic bridge device and method
TWI706107B (zh) * 2014-04-07 2020-10-01 晶元光電股份有限公司 一種發光裝置之色溫調整方法
CN105655472A (zh) * 2016-02-02 2016-06-08 上海鼎晖科技股份有限公司 一种金属导热柱cob led光源
CN116632151A (zh) * 2023-06-12 2023-08-22 中科芯耀照明(广东省)有限公司 光源结构

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100419611B1 (ko) 2001-05-24 2004-02-25 삼성전기주식회사 발광다이오드 및 이를 이용한 발광장치와 그 제조방법
JP4045781B2 (ja) 2001-08-28 2008-02-13 松下電工株式会社 発光装置
KR20080087049A (ko) * 2001-09-03 2008-09-29 마츠시타 덴끼 산교 가부시키가이샤 형광체 층, 반도체발광장치, 반도체발광소자의 제조방법
WO2004099342A1 (en) * 2003-05-12 2004-11-18 Luxpia Co., Ltd. Tb,b-based yellow phosphor, its preparation method, and white semiconductor light emitting device incorporating the same
JP4238693B2 (ja) * 2003-10-17 2009-03-18 豊田合成株式会社 光デバイス
JP2005267927A (ja) * 2004-03-17 2005-09-29 Nichia Chem Ind Ltd 発光装置
CN100472823C (zh) * 2003-10-15 2009-03-25 日亚化学工业株式会社 发光装置
JP2005294185A (ja) 2004-04-05 2005-10-20 Nichia Chem Ind Ltd 発光装置
US20050225222A1 (en) * 2004-04-09 2005-10-13 Joseph Mazzochette Light emitting diode arrays with improved light extraction
US20050248259A1 (en) 2004-05-10 2005-11-10 Roger Chang Bent lead light emitting diode device having a heat dispersing capability
CN100380694C (zh) * 2004-12-10 2008-04-09 北京大学 一种倒装led芯片的封装方法
US20060255352A1 (en) * 2005-05-11 2006-11-16 Quasar Optoelectronics, Inc. Light emitting diode light source model
JP2009071090A (ja) * 2007-09-14 2009-04-02 Toshiba Lighting & Technology Corp 発光装置

Also Published As

Publication number Publication date
JP2010516041A (ja) 2010-05-13
EP2104797B1 (en) 2013-07-31
US8410501B2 (en) 2013-04-02
WO2008084878A1 (en) 2008-07-17
CN101578473B (zh) 2013-04-10
CN101578473A (zh) 2009-11-11
US20090321772A1 (en) 2009-12-31
JP5296690B2 (ja) 2013-09-25
TW200837925A (en) 2008-09-16
EP2104797A1 (en) 2009-09-30

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Legal Events

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PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000