KR20090085467A - Metal fuse and mathode for manufacturing the same - Google Patents

Metal fuse and mathode for manufacturing the same Download PDF

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Publication number
KR20090085467A
KR20090085467A KR1020080011379A KR20080011379A KR20090085467A KR 20090085467 A KR20090085467 A KR 20090085467A KR 1020080011379 A KR1020080011379 A KR 1020080011379A KR 20080011379 A KR20080011379 A KR 20080011379A KR 20090085467 A KR20090085467 A KR 20090085467A
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KR
South Korea
Prior art keywords
fuse
metal fuse
metal
interlayer insulating
depositing
Prior art date
Application number
KR1020080011379A
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Korean (ko)
Inventor
김형규
Original Assignee
주식회사 하이닉스반도체
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Priority to KR1020080011379A priority Critical patent/KR20090085467A/en
Publication of KR20090085467A publication Critical patent/KR20090085467A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

The present invention relates to a metal fuse and a method of manufacturing the same.

In the method of manufacturing a metal fuse according to an embodiment of the present invention, after depositing a first interlayer insulating layer, depositing a second interlayer insulating layer on the first interlayer insulating layer, and removing a portion of the second interlayer insulating layer to lower the metal fuse. Forming a hole, and depositing and etching a metal material on the front surface of the metal fuse lower hole and the first interlayer insulating layer to form a bottom of the metal fuse having a regular polygonal shape; And etching to form a top of the metal fuse of the regular polygonal shape.

As described above, the present invention forms the cross-section of the metal fuse in the form of a hexagonal bilateral symmetry so that the pressure of the irradiated laser is equally applied, thereby improving the fuse blowing success rate and minimizing damage to the adjacent fuse yield of the semiconductor device To improve.

Description

Metal fuse and manufacturing method {METAL FUSE AND MATHODE FOR MANUFACTURING THE SAME}

The present invention relates to a metal fuse and a method for manufacturing the same, and more particularly, to form a cross-sectional shape of the metal fuse in the form of hexagonal bilaterally symmetrical to improve the fuse blowing success rate and minimize damage to the adjacent fuse and It relates to a manufacturing method.

In general, in the manufacture of a semiconductor memory device, if any one of a number of fine cells is defective, the semiconductor memory device may not function as a memory and thus may be treated as defective. Therefore, a function for repairing defective memory cells is required.

In general, a repair method of a defective memory cell includes a redundant memory cell in a semiconductor device, and when a defective memory cell occurs, the defective memory cell is replaced with a redundant memory cell.

In more detail, a repair method is provided in which spare lows and spare columns are pre-installed for each cell array, so that defective defective memory cells are replaced with row / column redundancy memory cells. It will be replaced.

That is, when a defective memory cell is selected through a test after wafer processing is completed, the corresponding address is replaced with an address signal of a redundancy memory cell, and when a signal corresponding to the defective address is input in actual use, the corresponding redundancy memory cell is replaced. It is a choice.

As such, one of the methods for changing the address path is fuse blowing, and the fuse blowing is a cutting method in which a fuse is blown by a laser beam, and a wire blown by a laser is called a metal fuse. The fuse sequence is called a fuse link, and the area around the broken area is called a fuse box.

Metal lines are often used as fuse links for such blow blowing, and when the metal lines are used as fuse links, the fuse links have a higher height than the plate fuses. The profile of the fuse link is an important variable.

Hereinafter, a method for manufacturing a conventional semiconductor device will be described in detail with reference to FIGS. 1A to 1E.

Referring to FIG. 1A, first, an interlayer insulating film 10 is deposited on a semiconductor substrate (not shown), and as shown in FIG. 1B, titanium (Ti) for forming the metal fuse 20 is formed on the interlayer insulating film 10. 21), titanium nitride (TiN; 22), aluminum 23, titanium (Ti; 24), and titanium nitride (TiN; 25) are sequentially deposited.

Referring to FIG. 1C, a photoresist pattern PR 30 for forming the metal fuse 20 is formed on the titanium nitride 25 and a trapezoidal shape through an etching process as illustrated in FIG. 1D. A metal fuse 20 having a cross section is formed.

Thereafter, referring to FIG. 1E, the oxide 40 is deposited on the entire surface of the metal fuse 20, and the oxide is left in a predetermined thickness through an etching process. At this time, the residual oxide (R OX ) is deposited so as to have a thickness of 1500 ~ 2000Å from the top of the metal fuse (20).

As such, the cross section of the metal fuse 20 according to the conventional method of manufacturing a semiconductor device has a trapezoidal shape having a lower end surface longer than the upper end surface.

When the laser is irradiated to the trapezoidal metal fuse, the pressure transmitted to the four sides of the cross-section as shown in Figure 2a is different. The pressure P (L1) applied is stronger than the peripheral pressures P (L2), P (L3), and P (L4).

Referring to Figure 2d and Table 1 below, the pressure distribution will be described in detail.

P = F / A (P: Pressure, F: Force, A: Area) L1, L4 L2 = L / COS (θ) L3 = L / COS (θ) A1 = L1 * W A2 = L / COS (θ) * W A3 = L / COS (θ) * W A4 = L4 * W (L: Length, W: Width) At this time, the energy transfer by the laser is the same in all directions, so F1 = F2 = F3 = F4 = F . P (L1) = F / L1 * WP (L2) = F / (L / COS (θ)) * WP (L3) = F / (L / COS (θ)) * WP (L4) = F / L4 * W

When the pressure is calculated using the formula shown in Table 1, P (L1)> P (L4)> P (L2), P in the case of the trapezoidal shape, L2, L3> L> L4> L1. As shown in (L3), the pressure P (L1) in the upper direction is relatively large, and the fuse blowing size is small, but a residue is likely to remain.

As described above, in the case of the metal fuse having a trapezoidal cross section of which the upper part is narrower than the lower part, the blowing starts from the upper end of the fuse and the lower part is subjected to a relatively weak pressure. As shown in FIG. Without forming a residue 60. As a result, the success rate of fuse blowing becomes low.

In addition, as shown in FIGS. 2E and 2F, even when the cross section of the metal fuse has an inverted trapezoidal shape, the pressure applied to the lower portion that is relatively narrower than the upper portion becomes stronger than the peripheral pressure. In this case, the residue may be solved, but the pressure of the lower end of the metal fuse is increased, thereby increasing the fuse blowing size, which may damage the adjacent fuse.

Referring to Table 1, when the upper end of the cross section of the metal fuse is wider than the lower end as shown in FIGS. 2E and 2F, L2, L3> L> L1> L4, and the pressure is P (L4)> P (L1)> P (L2 ), P (L3). Accordingly, since the pressure P (L4) in the downward direction of the metal fuse cross section is relatively large, the residue is less likely to remain, but the blowing size is large, which may cause damage to the adjacent fuse.

As such, if the fuse is not blown properly, the defective cell cannot be replaced with the normal cell, thereby lowering the error relief yield and damaging the adjacent fuse, thereby lowering the yield of the semiconductor device.

The present invention has been made to solve the above problems, and an object of the present invention is to form a cross-section of the metal fuse in the form of a hexagonal bilateral symmetry, evenly distributed laser pressure during fuse blowing to improve the fuse blowing success rate and adjacent Minimizing the damage to the fuse to improve the yield of the semiconductor device.

Metal fuse according to an embodiment of the present invention for achieving the above object is characterized in that the cross-section is formed in a regular polygonal shape.

In addition, the cross section is characterized in that formed in a hexagonal structure of symmetry.

In addition, the method for manufacturing a metal fuse according to an embodiment of the present invention after depositing a first interlayer insulating film, and depositing a second interlayer insulating film on the first interlayer insulating film, and removing a portion of the second interlayer insulating film metal Forming a fuse lower hole, depositing and etching a metal material on the front surface of the metal fuse lower hole and the first interlayer insulating layer to form a bottom of the metal fuse having a regular polygonal shape, and a metal material on the upper front surface of the bottom of the metal fuse; It is characterized in that it comprises the step of depositing and etching to form a metal fuse top of the regular polygonal form.

In the depositing of the second interlayer insulating film, the second interlayer insulating film may be deposited at a thickness of 1000 to 2000 μs.

In the forming of the metal fuse lower hole, the metal fuse lower hole may be formed by etching the second interlayer insulating layer to expose a part of the first interlayer insulating layer using a photoresist pattern.

In addition, the step of forming the bottom of the metal fuse is characterized in that to sequentially deposit titanium (Ti), titanium nitride (TiN), and aluminum (Al).

In addition, the forming of the top of the metal fuse is characterized in that the deposition of aluminum (Al), titanium (Ti), and titanium nitride (TiN) sequentially.

In addition, the metal fuse is characterized in that it is formed to be a cross-section of the regular hexagon of left and right symmetry.

As described above, the present invention forms a cross-section of the metal fuse in a hexagonal shape of right and left symmetry so that the pressure of the irradiated laser is equally applied, thereby improving the fuse blowing success rate and minimizing damage to adjacent fuses, thereby increasing the yield of semiconductor devices. It is effective to improve.

Hereinafter, a metal fuse according to the present invention and a manufacturing method thereof will be described in detail with reference to FIGS. 4 to 7.

First, as shown in FIG. 4, the semiconductor device according to the present invention includes a metal line and a first interlayer insulating layer 102 on which a metal wire 300 having a trapezoidal cross-section is formed on the first interlayer insulating layer 102. Consists of a fuse link formed on the upper portion of the lateral symmetrical hexagonal metal fuse 200 spaced apart.

At this time, a second interlayer insulating film 104 is formed between the lower portions of the hexagonal metal fuse 200 on the fuse link side, and an oxide 122 is formed between the upper portions, and the oxide 122 is a metal fuse 200. It is preferable to be formed to a thickness of 1500 ~ 2000Å.

In addition, the hexagonal metal fuse 200 includes titanium (Ti; 108), titanium nitride (TiN; 110), aluminum (112, 114), titanium (Ti; 116), and titanium nitride (TiN; 118) sequentially. It has a structure formed by being deposited.

At this time, titanium (Ti), titanium nitride (TiN), aluminum (Al), titanium (Ti), and titanium nitride (TiN) are sequentially deposited on the metal line 300 having a trapezoidal shape on the metal line side. It has a formed structure.

Hereinafter, a method of manufacturing a semiconductor device according to an embodiment of the present invention will be described in detail with reference to FIGS. 5A to 5J.

First, referring to FIG. 5A, after the first interlayer insulating film 102 is deposited, a second interlayer insulating film 104 having a thickness of 1000 to 2000 μs is further deposited on the interlayer insulating film 102.

Subsequently, referring to FIG. 5B, a photoresist pattern PR 106 is formed on one side of the second interlayer insulating layer 104 to form a lower structure of the metal fuse.

Subsequently, referring to FIG. 5C, an inverted trapezoidal metal fuse lower hole 107 for forming a lower structure of the metal fuse is formed through an etching process, and a second interlayer insulating film 104 of a portion where a metal line is to be formed later is formed. The first interlayer insulating film 102 is exposed.

Thereafter, referring to FIG. 5D, titanium (Ti; 108), titanium nitride (TiN; 110), and aluminum (Al; 112) are sequentially deposited to form a metal fuse.

5E, the aluminum 112 is etched through an etchback process to expose the second interlayer insulating film 104.

Subsequently, referring to FIG. 5F, aluminum 114, titanium (Ti) 116, and titanium nitride (TiN) 118 are sequentially deposited on the structure of FIG. 5E.

Subsequently, referring to FIG. 5G, the photoresist pattern 120 for forming the upper portion of the metal fuse is formed on the structure of FIG. 5F.

Thus, referring to FIG. 5H, portions of aluminum 114, titanium (Ti; 116), and titanium nitride (TiN; 118) are removed according to the shape of the photoresist pattern 120 through an etching process. At this time, the cross section of the metal line 300 on the metal line side is formed in a trapezoidal shape, and the cross section of the metal fuse 200 on the fuse link side is formed in a hexagonal shape of right and left symmetry.

Subsequently, referring to FIG. 5I, the oxide 122 is deposited on the front surface of the metal wire 300 and the metal fuse 200, and a thickness of the oxide 122 is etched through an etching process as shown in FIG. 5J. Remove only 2000Å).

Through this manufacturing method, the metal line 300 on the metal line side has a trapezoidal cross section, and the metal fuses 200 on the fuse link side have a regular hexagonal cross section.

6A and 6B, when the cross section of the metal fuse 200 is hexagonal, the laser pressure irradiated on the ground surface is almost similar, so that the residue as shown in FIG. It can be removed cleanly without a resistor to increase the fuse blowing success rate.

1A to 1E are cross-sectional views illustrating a method for manufacturing a metal fuse according to the prior art.

Figure 2a to 2f is a view showing a pressure distribution during laser irradiation to explain the problem when blowing the fuse according to the prior art.

3 is a cross-sectional view of the metal fuse in which the residue is present when blowing the fuse according to the prior art.

4 is a cross-sectional view of a metal fuse according to an embodiment of the present invention.

5A to 5J are cross-sectional views illustrating a method of manufacturing a metal fuse according to an embodiment of the present invention.

6A and 6B are diagrams illustrating a pressure distribution diagram during laser irradiation for fuse blowing according to an embodiment of the present invention.

7 is a cross-sectional view of a fuse blown metal fuse according to an embodiment of the present invention.

Explanation of symbols on the main parts of the drawings

10, 102, 104: interlayer insulating film 30, 106, 120: photoresist pattern

107: metal fuse lower hole

22, 25, 110, 118: titanium nitride (TiN)

21, 24, 108, 116: titanium (Ti) 23, 114: aluminum (Al)

20, 200: metal fuse 40, 122: oxide

50: fuse blowing area 60: residue

Claims (8)

Metal fuse, characterized in that the cross section is formed in a regular polygonal shape. The method of claim 1, The cross section is a metal fuse, characterized in that formed in a hexagonal structure of symmetry. After depositing a first interlayer dielectric layer, depositing a second interlayer dielectric layer on the first interlayer dielectric layer; Removing a portion of the second interlayer insulating film to form a metal fuse lower hole; Depositing and etching a metal material on an entire surface of the metal fuse lower hole and the first interlayer insulating layer to form a bottom of the metal fuse having a regular polygonal shape; And Depositing and etching a metal material on the entire upper surface of the lower lower portion of the metal fuse to form an upper end of a regular polygonal metal fuse; Method for producing a metal fuse, characterized in that it comprises a. The method of claim 3, wherein The depositing of the second interlayer insulating film may include depositing the second interlayer insulating film at a thickness of 1000 to 2000 μs. The method of claim 3, wherein The forming of the metal fuse lower hole may include forming the metal fuse lower hole by etching the second interlayer insulating layer to expose a portion of the first interlayer insulating layer using a photoresist pattern. Way. The method of claim 3, wherein Forming the bottom of the metal fuse is a method of manufacturing a metal fuse, characterized in that to sequentially deposit titanium (Ti), titanium nitride (TiN), and aluminum (Al). The method of claim 3, wherein Forming the top of the metal fuse is a method of manufacturing a metal fuse, characterized in that to sequentially deposit aluminum (Al), titanium (Ti), and titanium nitride (TiN). The method of claim 3, wherein The metal fuse is a method of manufacturing a metal fuse, characterized in that formed to be a cross-section of the regular symmetrical hexagon.
KR1020080011379A 2008-02-04 2008-02-04 Metal fuse and mathode for manufacturing the same KR20090085467A (en)

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KR1020080011379A KR20090085467A (en) 2008-02-04 2008-02-04 Metal fuse and mathode for manufacturing the same

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KR1020080011379A KR20090085467A (en) 2008-02-04 2008-02-04 Metal fuse and mathode for manufacturing the same

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