KR20090059038A - 열-보조 기입 자기 소자 - Google Patents

열-보조 기입 자기 소자 Download PDF

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Publication number
KR20090059038A
KR20090059038A KR1020080118920A KR20080118920A KR20090059038A KR 20090059038 A KR20090059038 A KR 20090059038A KR 1020080118920 A KR1020080118920 A KR 1020080118920A KR 20080118920 A KR20080118920 A KR 20080118920A KR 20090059038 A KR20090059038 A KR 20090059038A
Authority
KR
South Korea
Prior art keywords
layer
magnetic
amorphous
field
storage
Prior art date
Application number
KR1020080118920A
Other languages
English (en)
Korean (ko)
Inventor
뤼씨앙 프레베아뉘
쎄씰 모누리
베르나르 디에니
끌라리쓰 뒤크뤼에
히꺄르도 쑤자
Original Assignee
꼼미사리아 아 레네르지 아토미끄
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 꼼미사리아 아 레네르지 아토미끄 filed Critical 꼼미사리아 아 레네르지 아토미끄
Publication of KR20090059038A publication Critical patent/KR20090059038A/ko

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Magnetic Heads (AREA)
KR1020080118920A 2007-12-05 2008-11-27 열-보조 기입 자기 소자 KR20090059038A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0759584A FR2924851B1 (fr) 2007-12-05 2007-12-05 Element magnetique a ecriture assistee thermiquement.
FR0759584 2007-12-05

Publications (1)

Publication Number Publication Date
KR20090059038A true KR20090059038A (ko) 2009-06-10

Family

ID=39370712

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080118920A KR20090059038A (ko) 2007-12-05 2008-11-27 열-보조 기입 자기 소자

Country Status (8)

Country Link
US (1) US7898833B2 (ja)
EP (1) EP2218072B1 (ja)
JP (1) JP5727125B2 (ja)
KR (1) KR20090059038A (ja)
CN (1) CN101452991B (ja)
FR (1) FR2924851B1 (ja)
SG (1) SG153012A1 (ja)
WO (1) WO2009080939A1 (ja)

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WO2009074411A1 (en) * 2007-12-13 2009-06-18 Crocus Technology Magnetic memory with a thermally assisted writing procedure
WO2010021213A1 (ja) * 2008-08-18 2010-02-25 日本電気株式会社 磁気抵抗記憶装置
US8238151B2 (en) 2009-12-18 2012-08-07 Micron Technology, Inc. Transient heat assisted STTRAM cell for lower programming current
KR101684915B1 (ko) 2010-07-26 2016-12-12 삼성전자주식회사 자기 기억 소자
FR2965654B1 (fr) 2010-10-01 2012-10-19 Commissariat Energie Atomique Dispositif magnetique a ecriture assistee thermiquement
EP2479759A1 (en) * 2011-01-19 2012-07-25 Crocus Technology S.A. Low power magnetic random access memory cell
US9157879B2 (en) 2011-04-15 2015-10-13 Indiana University of Pennsylvania Thermally activated magnetic and resistive aging
US9041419B2 (en) 2011-04-15 2015-05-26 Indiana University of Pennsylvania Thermally activated magnetic and resistive aging
FR2976113B1 (fr) 2011-06-06 2013-07-12 Commissariat Energie Atomique Dispositif magnetique a couplage d'echange
US20130065075A1 (en) * 2011-09-12 2013-03-14 Klemens Pruegl Magnetoresistive spin valve layer systems
US8503135B2 (en) 2011-09-21 2013-08-06 Seagate Technology Llc Magnetic sensor with enhanced magnetoresistance ratio
EP2608208B1 (en) * 2011-12-22 2015-02-11 Crocus Technology S.A. Self-referenced MRAM cell and method for writing the cell using a spin transfer torque write operation
CN103531707A (zh) * 2012-07-03 2014-01-22 中国科学院物理研究所 磁性隧道结
FR2993387B1 (fr) 2012-07-11 2014-08-08 Commissariat Energie Atomique Dispositif magnetique a ecriture assistee thermiquement
US9029965B2 (en) * 2012-12-03 2015-05-12 Samsung Electronics Co., Ltd. Method and system for providing magnetic junctions having a thermally stable and easy to switch magnetic free layer
US8796796B2 (en) * 2012-12-20 2014-08-05 Samsung Electronics Co., Ltd. Method and system for providing magnetic junctions having improved polarization enhancement and reference layers
EP2800096B1 (en) 2013-04-29 2018-08-01 Crocus Technology S.A. Thermally-assisted MRAM cells with improved reliability at writing
US9257970B1 (en) 2014-12-19 2016-02-09 Honeywell International Inc. Magnetic latch
FR3031622B1 (fr) * 2015-01-14 2018-02-16 Centre National De La Recherche Scientifique Point memoire magnetique
US9923137B2 (en) * 2015-03-05 2018-03-20 Globalfoundries Singapore Pte. Ltd. Magnetic memory with tunneling magnetoresistance enhanced spacer layer
US10128309B2 (en) 2015-03-27 2018-11-13 Globalfoundries Singapore Pte. Ltd. Storage layer for magnetic memory with high thermal stability
CN105633275B (zh) * 2015-09-22 2018-07-06 上海磁宇信息科技有限公司 一种垂直型stt-mram记忆单元及其读写方法
US10297745B2 (en) 2015-11-02 2019-05-21 Globalfoundries Singapore Pte. Ltd. Composite spacer layer for magnetoresistive memory
US10541014B2 (en) * 2015-12-24 2020-01-21 Intel Corporation Memory cells with enhanced tunneling magnetoresistance ratio, memory devices and systems including the same
CN110867511B (zh) * 2018-08-28 2021-09-21 中电海康集团有限公司 垂直磁化的mtj器件
CN110531286A (zh) * 2019-07-26 2019-12-03 西安交通大学 一种抗强磁场干扰的amr传感器及其制备方法
CN111725386B (zh) * 2019-09-23 2022-06-10 中国科学院上海微系统与信息技术研究所 一种磁性存储器件及其制作方法、存储器和神经网络系统
CN112750946B (zh) * 2019-10-31 2023-06-02 上海磁宇信息科技有限公司 一种磁性随机存储器势垒层和自由层结构单元及其制备方法
US11903218B2 (en) 2020-06-26 2024-02-13 Sandisk Technologies Llc Bonded memory devices and methods of making the same
CN114730764A (zh) * 2020-06-26 2022-07-08 桑迪士克科技有限责任公司 键合的存储器设备及其制作方法

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DE3820475C1 (ja) 1988-06-16 1989-12-21 Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De
US5159513A (en) 1991-02-08 1992-10-27 International Business Machines Corporation Magnetoresistive sensor based on the spin valve effect
US5343422A (en) 1993-02-23 1994-08-30 International Business Machines Corporation Nonvolatile magnetoresistive storage device using spin valve effect
US6021065A (en) 1996-09-06 2000-02-01 Nonvolatile Electronics Incorporated Spin dependent tunneling memory
US5583725A (en) 1994-06-15 1996-12-10 International Business Machines Corporation Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor
US5640343A (en) 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
EP1288665A4 (en) * 2000-05-26 2007-04-25 Med & Biological Lab Co Ltd METHOD FOR DETERMINING ENA-TESTED ANTIBODIES AND EXPERIMENTAL KIT
US6385082B1 (en) 2000-11-08 2002-05-07 International Business Machines Corp. Thermally-assisted magnetic random access memory (MRAM)
JP4387955B2 (ja) * 2001-04-24 2009-12-24 パナソニック株式会社 磁気抵抗効果素子
FR2832542B1 (fr) * 2001-11-16 2005-05-06 Commissariat Energie Atomique Dispositif magnetique a jonction tunnel magnetique, memoire et procedes d'ecriture et de lecture utilisant ce dispositif
JP2004200245A (ja) * 2002-12-16 2004-07-15 Nec Corp 磁気抵抗素子及び磁気抵抗素子の製造方法
US7161875B2 (en) * 2003-06-12 2007-01-09 Hewlett-Packard Development Company, L.P. Thermal-assisted magnetic memory storage device
US7110287B2 (en) * 2004-02-13 2006-09-19 Grandis, Inc. Method and system for providing heat assisted switching of a magnetic element utilizing spin transfer
US7149106B2 (en) * 2004-10-22 2006-12-12 Freescale Semiconductor, Inc. Spin-transfer based MRAM using angular-dependent selectivity
US7241631B2 (en) * 2004-12-29 2007-07-10 Grandis, Inc. MTJ elements with high spin polarization layers configured for spin-transfer switching and spintronics devices using the magnetic elements
US7196955B2 (en) * 2005-01-12 2007-03-27 Hewlett-Packard Development Company, L.P. Hardmasks for providing thermally assisted switching of magnetic memory elements
JP5077802B2 (ja) * 2005-02-16 2012-11-21 日本電気株式会社 積層強磁性構造体、及び、ｍｔｊ素子
JP2006319259A (ja) * 2005-05-16 2006-11-24 Fujitsu Ltd 強磁性トンネル接合素子、これを用いた磁気ヘッド、磁気記録装置、および磁気メモリ装置
JP4768488B2 (ja) * 2006-03-27 2011-09-07 株式会社東芝 磁気抵抗効果素子，磁気ヘッド，および磁気ディスク装置
JP4277870B2 (ja) * 2006-04-17 2009-06-10 ソニー株式会社 記憶素子及びメモリ

Also Published As

Publication number Publication date
US7898833B2 (en) 2011-03-01
WO2009080939A1 (fr) 2009-07-02
EP2218072B1 (fr) 2015-05-13
CN101452991B (zh) 2014-05-07
SG153012A1 (en) 2009-06-29
JP5727125B2 (ja) 2015-06-03
JP2009147330A (ja) 2009-07-02
US20090147392A1 (en) 2009-06-11
FR2924851A1 (fr) 2009-06-12
EP2218072A1 (fr) 2010-08-18
CN101452991A (zh) 2009-06-10
FR2924851B1 (fr) 2009-11-20

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