KR20090036372A - 반도체 웨이퍼 검사방법 - Google Patents
반도체 웨이퍼 검사방법 Download PDFInfo
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- KR20090036372A KR20090036372A KR1020070101524A KR20070101524A KR20090036372A KR 20090036372 A KR20090036372 A KR 20090036372A KR 1020070101524 A KR1020070101524 A KR 1020070101524A KR 20070101524 A KR20070101524 A KR 20070101524A KR 20090036372 A KR20090036372 A KR 20090036372A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
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- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Abstract
Description
Claims (5)
- 반도체 웨이퍼 검사방법에 있어서,이더넷을 통한 통신으로 PMAC 컨트롤러에 로드 포지션으로 이동명령을 보내어 웨이퍼를 로드하는 단계;웨이퍼가 로드되면 스테이지 컨트롤 과정 및 라이브 캠의 화면 조작을 통해 웨이퍼를 이동시키면서 현미경을 통해 웨이퍼를 검사하는 단계;상기 현미경을 통한 영상은 카메라에 의해 촬영되고 이렇게 촬영된 영상은 영상신호변환수단을 통해 영상신호로 변환되어 컨트롤러에 인가된 후 컨트롤러는 웨이퍼에 대한 칩의 영역 및 크기 등을 지정하여 웨이퍼 맵을 형성한 다음 이 웨이퍼 맵을 모니터에 디스플레이하는 단계;웨이퍼 검사 후 이더넷을 통한 통신으로 PMAC 컨트롤러에 언로드 포지션으로 이동명령을 보내어 웨이퍼를 언로드하는 단계;를 포함하는 것을 특징으로 하는 반도체 웨이퍼 검사방법.
- 청구항 1에 있어서, 상기 스테이지 컨트롤 과정은 절대 좌표 이동, 상대 좌표 이동 및 이송 속도에 대한 명령을 선택한 후 이더넷을 통하여 선택된 이동 명령을 PMAC에 보내어 웨이퍼를 포함하는 스테이지를 이동하는 과정으로 이루어지는 것을 특징으로 하는 반도체 웨이퍼 검사방법.
- 청구항 1에 있어서, 상기 웨이퍼 검사 단계는 마우스를 이용하여 측정 범위 및 측정값을 입력하는 과정과, 측정하고자 하는 영역의 정보를 컨트롤러측에 전송하는 과정과, 캘리브레이션 정보를 확인하는 과정과, 측정 영역 정보와 캘리브레이션 정보를 계산한 후 그 결과를 모니터상의 웨이퍼 맵에 디스플레이하는 동시에 상기 모니터에 표시되는 웨이퍼 맵 영상과 웨이퍼에 대한 정보를 컨트롤러에 저장하는 과정으로 이루어지는 것을 특징으로 하는 반도체 웨이퍼 검사방법.
- 청구항 1 또는 청구항 3에 있어서, 상기 웨이퍼 검사 단계는 측정하고자 하는 영역의 이미지가 선택되면 이때의 선택된 이미지를 확대하여 디스플레이하는 과정을 더 포함하는 것을 특징으로 하는 반도체 웨이퍼 검사방법.
- 청구항 1 또는 청구항 3에 있어서, 상기 웨이퍼 검사 단계는 측정하고자 하는 영역 중 임의의 영역을 마우스로 클릭하여 센터로 이동시키고, 캘리브레이션 데이터를 확인한 후 이더넷을 통한 통신으로 PMAC 컨트롤러에 거리값 만큼 이동명령을 보내어 마우스 클릭 영역을 이동시키는 라이브 이미지 이동과정을 더 포함하는 것을 특징으로 하는 반도체 웨이퍼 검사방법.
Priority Applications (1)
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KR1020070101524A KR100921710B1 (ko) | 2007-10-09 | 2007-10-09 | 반도체 웨이퍼 검사방법 |
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KR1020070101524A KR100921710B1 (ko) | 2007-10-09 | 2007-10-09 | 반도체 웨이퍼 검사방법 |
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KR20090036372A true KR20090036372A (ko) | 2009-04-14 |
KR100921710B1 KR100921710B1 (ko) | 2009-10-15 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113791083A (zh) * | 2021-08-10 | 2021-12-14 | 苏州华兴源创科技股份有限公司 | 一种基于pmac的运动控制检测方法和系统 |
WO2023096236A1 (ko) * | 2021-11-24 | 2023-06-01 | 주식회사 메타소닉 | 적층형 반도체의 잠재 불량 스크린 장치 및 그 방법 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102116834B (zh) * | 2010-01-05 | 2013-04-24 | 上海华虹Nec电子有限公司 | 用于nvm测试中不同品种参数之间坐标的对应方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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KR20000001940A (ko) * | 1998-06-15 | 2000-01-15 | 윤종용 | 랜을 이용한 웨이퍼 검사 시스템 |
KR100515376B1 (ko) * | 2003-01-30 | 2005-09-14 | 동부아남반도체 주식회사 | 반도체 웨이퍼 검사장비 및 검사방법 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113791083A (zh) * | 2021-08-10 | 2021-12-14 | 苏州华兴源创科技股份有限公司 | 一种基于pmac的运动控制检测方法和系统 |
CN113791083B (zh) * | 2021-08-10 | 2024-04-12 | 苏州华兴源创科技股份有限公司 | 一种基于pmac的运动控制检测方法和系统 |
WO2023096236A1 (ko) * | 2021-11-24 | 2023-06-01 | 주식회사 메타소닉 | 적층형 반도체의 잠재 불량 스크린 장치 및 그 방법 |
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KR100921710B1 (ko) | 2009-10-15 |
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