KR20090030652A - 질화물계 발광소자 - Google Patents

질화물계 발광소자 Download PDF

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Publication number
KR20090030652A
KR20090030652A KR1020070096081A KR20070096081A KR20090030652A KR 20090030652 A KR20090030652 A KR 20090030652A KR 1020070096081 A KR1020070096081 A KR 1020070096081A KR 20070096081 A KR20070096081 A KR 20070096081A KR 20090030652 A KR20090030652 A KR 20090030652A
Authority
KR
South Korea
Prior art keywords
layer
light emitting
nitride semiconductor
type nitride
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020070096081A
Other languages
English (en)
Korean (ko)
Inventor
최재빈
Original Assignee
서울옵토디바이스주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 서울옵토디바이스주식회사 filed Critical 서울옵토디바이스주식회사
Priority to KR1020070096081A priority Critical patent/KR20090030652A/ko
Priority to JP2008183786A priority patent/JP2009076864A/ja
Priority to US12/173,319 priority patent/US20090078961A1/en
Priority to DE102008034299A priority patent/DE102008034299A1/de
Publication of KR20090030652A publication Critical patent/KR20090030652A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
KR1020070096081A 2007-09-20 2007-09-20 질화물계 발광소자 Ceased KR20090030652A (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020070096081A KR20090030652A (ko) 2007-09-20 2007-09-20 질화물계 발광소자
JP2008183786A JP2009076864A (ja) 2007-09-20 2008-07-15 窒化物系発光素子
US12/173,319 US20090078961A1 (en) 2007-09-20 2008-07-15 Nitride-based light emitting device
DE102008034299A DE102008034299A1 (de) 2007-09-20 2008-07-23 Licht emittierendes Bauelement auf Nitridbasis

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070096081A KR20090030652A (ko) 2007-09-20 2007-09-20 질화물계 발광소자

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020090079426A Division KR100974924B1 (ko) 2009-08-26 2009-08-26 질화물계 발광소자

Publications (1)

Publication Number Publication Date
KR20090030652A true KR20090030652A (ko) 2009-03-25

Family

ID=40384536

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070096081A Ceased KR20090030652A (ko) 2007-09-20 2007-09-20 질화물계 발광소자

Country Status (4)

Country Link
US (1) US20090078961A1 (enExample)
JP (1) JP2009076864A (enExample)
KR (1) KR20090030652A (enExample)
DE (1) DE102008034299A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009060750B4 (de) 2009-12-30 2025-04-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
CN102811157A (zh) * 2011-06-01 2012-12-05 阿尔卡特朗讯公司 流量控制方法和流量控制装置
US9159788B2 (en) 2013-12-31 2015-10-13 Industrial Technology Research Institute Nitride semiconductor structure
US9112077B1 (en) 2014-04-28 2015-08-18 Industrial Technology Research Institute Semiconductor structure

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980079320A (ko) * 1997-03-24 1998-11-25 기다오까다까시 고품질 쥐에이엔계층의 선택성장방법, 고품질 쥐에이엔계층 성장기판 및 고품질 쥐에이엔계층 성장기판상에 제작하는 반도체디바이스
JPH10326750A (ja) * 1997-03-24 1998-12-08 Mitsubishi Electric Corp 高品質ＧａＮ系層の選択成長方法、高品質ＧａＮ系層成長基板および高品質ＧａＮ系層成長基板上に作製した半導体デバイス

Also Published As

Publication number Publication date
US20090078961A1 (en) 2009-03-26
JP2009076864A (ja) 2009-04-09
DE102008034299A1 (de) 2009-04-02

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