JP2009076864A - 窒化物系発光素子 - Google Patents

窒化物系発光素子 Download PDF

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Publication number
JP2009076864A
JP2009076864A JP2008183786A JP2008183786A JP2009076864A JP 2009076864 A JP2009076864 A JP 2009076864A JP 2008183786 A JP2008183786 A JP 2008183786A JP 2008183786 A JP2008183786 A JP 2008183786A JP 2009076864 A JP2009076864 A JP 2009076864A
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JP
Japan
Prior art keywords
layer
nitride semiconductor
type nitride
semiconductor layer
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008183786A
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English (en)
Japanese (ja)
Other versions
JP2009076864A5 (enExample
Inventor
Jae Bin Choi
ジェ ビン チェ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seoul Viosys Co Ltd
Original Assignee
Seoul Optodevice Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seoul Optodevice Co Ltd filed Critical Seoul Optodevice Co Ltd
Publication of JP2009076864A publication Critical patent/JP2009076864A/ja
Publication of JP2009076864A5 publication Critical patent/JP2009076864A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
JP2008183786A 2007-09-20 2008-07-15 窒化物系発光素子 Pending JP2009076864A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070096081A KR20090030652A (ko) 2007-09-20 2007-09-20 질화물계 발광소자

Publications (2)

Publication Number Publication Date
JP2009076864A true JP2009076864A (ja) 2009-04-09
JP2009076864A5 JP2009076864A5 (enExample) 2011-08-25

Family

ID=40384536

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008183786A Pending JP2009076864A (ja) 2007-09-20 2008-07-15 窒化物系発光素子

Country Status (4)

Country Link
US (1) US20090078961A1 (enExample)
JP (1) JP2009076864A (enExample)
KR (1) KR20090030652A (enExample)
DE (1) DE102008034299A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009060750B4 (de) 2009-12-30 2025-04-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
CN102811157A (zh) * 2011-06-01 2012-12-05 阿尔卡特朗讯公司 流量控制方法和流量控制装置
US9159788B2 (en) 2013-12-31 2015-10-13 Industrial Technology Research Institute Nitride semiconductor structure
US9112077B1 (en) 2014-04-28 2015-08-18 Industrial Technology Research Institute Semiconductor structure

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10326750A (ja) * 1997-03-24 1998-12-08 Mitsubishi Electric Corp 高品質ＧａＮ系層の選択成長方法、高品質ＧａＮ系層成長基板および高品質ＧａＮ系層成長基板上に作製した半導体デバイス

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980079320A (ko) * 1997-03-24 1998-11-25 기다오까다까시 고품질 쥐에이엔계층의 선택성장방법, 고품질 쥐에이엔계층 성장기판 및 고품질 쥐에이엔계층 성장기판상에 제작하는 반도체디바이스

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10326750A (ja) * 1997-03-24 1998-12-08 Mitsubishi Electric Corp 高品質ＧａＮ系層の選択成長方法、高品質ＧａＮ系層成長基板および高品質ＧａＮ系層成長基板上に作製した半導体デバイス

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JPN7012005283; Ｔ．Ａｋａｓａｋａ，　ＥＴ　ＡＬ．: 'Ｒｅｄｕｃｔｉｏｎ　ｏｆ　ｔｈｒｅａｄｉｎｇ　ｄｉｓｌｏｃａｔｉｏｎｓ　ｉｎ　ｃｒａｃｋ-ｆｒｅｅ　ＡｌＧａＮ　ｂｙ　ｕｓｉｎｇ　ｍｕｌｔｉｐｌｅ　ｔｈｉｎ　ＳｉｘＡｌ１-ｘＮ　ｉｎｔｅｒｌａｙｅｒｓ' Ａｐｐｌｉｅｄ　Ｐｈｙｓｉｃｓ　Ｌｅｔｔｅｒｓ Ｖｏｌ．８３，Ｎｏ．２０, 2003, ｐｐ．４１４０-４１４２ *

Also Published As

Publication number Publication date
US20090078961A1 (en) 2009-03-26
KR20090030652A (ko) 2009-03-25
DE102008034299A1 (de) 2009-04-02

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