KR20090028562A - 아날로그 절연 멀티플렉서 - Google Patents
아날로그 절연 멀티플렉서 Download PDFInfo
- Publication number
- KR20090028562A KR20090028562A KR1020087031602A KR20087031602A KR20090028562A KR 20090028562 A KR20090028562 A KR 20090028562A KR 1020087031602 A KR1020087031602 A KR 1020087031602A KR 20087031602 A KR20087031602 A KR 20087031602A KR 20090028562 A KR20090028562 A KR 20090028562A
- Authority
- KR
- South Korea
- Prior art keywords
- analog
- resistor
- secondary side
- switching element
- multiplexer
- Prior art date
Links
- 238000009413 insulation Methods 0.000 title claims abstract description 58
- 239000003990 capacitor Substances 0.000 claims abstract description 21
- 238000002955 isolation Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- 230000005669 field effect Effects 0.000 claims description 5
- 101100484930 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) VPS41 gene Proteins 0.000 abstract description 10
- 238000010586 diagram Methods 0.000 description 15
- 101150073536 FET3 gene Proteins 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000001052 transient effect Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/38—DC amplifiers with modulator at input and demodulator at output; Modulators or demodulators specially adapted for use in such amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/689—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit
- H03K17/691—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors with galvanic isolation between the control circuit and the output circuit using transformer coupling
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
Abstract
Description
Claims (7)
- 외부 신호에 따른 스위칭에 의해 구동 제어 신호를 생성하는 제 1 스위칭 소자와,상기 구동 제어 신호가 제 1 저항을 통해서 1차측에 인가되고, 절연된 구동 제어 신호를 2차측에 출력하는 구동용 절연 트랜스와,상기 절연된 구동 제어 신호에 따라 아날로그 신호 입력을 초핑(chopping)하여, 초핑 아날로그 신호를 생성하는 제 2 스위칭 소자와,상기 초핑 아날로그 신호가 1차측에 인가되고, 절연된 초핑 아날로그 신호를 2차측에 출력하는 아날로그 신호 절연 트랜스를 구비한 아날로그 절연 멀티플렉서에 있어서,상기 구동용 절연 트랜스의 1차측과 상기 제 1 저항 사이에 일단이 접속된 제 2 저항과, 일단이 접지되고 타단이 상기 제 2 저항에 직렬 접속된 콘덴서를 갖는 2차측 출력 조정 회로를 더 구비한 것을 특징으로 하는 아날로그 절연 멀티플렉서.
- 제 1 항에 있어서,상기 2차측 출력 조정 회로는,상기 제 2 저항과 상기 콘덴서 사이에 직렬로 삽입된 다이오드와,일단이 전원에 접속되고 타단이 상기 콘덴서와 상기 다이오드 사이의 접속선에 접속되는 제 3 저항을 더 구비한 것을 특징으로 하는 아날로그 절연 멀티플렉서.
- 제 2 항에 있어서,상기 2차측 출력 조정 회로 내의 상기 다이오드는, 2개 이상의 다이오드를 직렬 접속하여 구성되는 것을 특징으로 하는 아날로그 절연 멀티플렉서.
- 제 1 항에 있어서,상기 2차측 출력 조정 회로는,상기 제 2 저항과 상기 콘덴서 사이에 직렬로 삽입되고, 상기 외부 신호에 따른 스위칭에 의해 상기 제 1 스위칭 소자와 동일하게 스위칭되는 제 3 스위칭 소자와,일단이 전원에 접속되고 타단이 상기 콘덴서와 상기 제 3 스위칭 소자 사이의 접속선에 접속되는 제 3 저항을 더 구비한 것을 특징으로 하는 아날로그 절연 멀티플렉서.
- 제 1 항에 있어서,상기 2차측 출력 조정 회로는,상기 제 1 저항 및 상기 제 2 저항의 병렬 회로와 상기 구동용 절연 트랜스의 1차측 사이에 직렬로 삽입된 제 4 저항을 더 구비한 것을 특징으로 하는 아날로그 절연 멀티플렉서.
- 제 1 항 내지 제 5 항 중 어느 한 항에 있어서,상기 스위칭 소자는, 전계 효과 트랜지스터인 것을 특징으로 하는 아날로그 절연 멀티플렉서.
- 제 1 항 내지 제 5 항 중 어느 한 항에 있어서,상기 스위칭 소자는, 트랜지스터인 것을 특징으로 하는 아날로그 절연 멀티플렉서.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2006-146599 | 2006-05-26 | ||
JP2006146599 | 2006-05-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090028562A true KR20090028562A (ko) | 2009-03-18 |
KR101027835B1 KR101027835B1 (ko) | 2011-04-07 |
Family
ID=38778314
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020087031602A KR101027835B1 (ko) | 2006-05-26 | 2007-04-10 | 아날로그 절연 멀티플렉서 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7973588B2 (ko) |
EP (1) | EP2023488B1 (ko) |
JP (1) | JP4651711B2 (ko) |
KR (1) | KR101027835B1 (ko) |
CN (1) | CN101454980B (ko) |
WO (1) | WO2007138791A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010003379A1 (de) | 2009-04-02 | 2010-11-25 | Samsung Corning Precision Glass Co. Ltd. | Mehrschichtiger Dünnfilm für photovoltaische Zelle |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102274857B (zh) * | 2011-07-12 | 2013-04-24 | 北京京诚瑞信长材工程技术有限公司 | 高速线材吐丝机动平衡调整工艺方法 |
US20230006559A1 (en) * | 2021-06-30 | 2023-01-05 | Texas Instruments Incorporated | Data transfer through an isolated power converter |
GB2626100A (en) * | 2021-11-09 | 2024-07-10 | Mitsubishi Electric Corp | Analog signal input device |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT946985B (it) * | 1972-01-28 | 1973-05-21 | Honeywell Inf Systems | Circuito di pilotaggio a trasforma tore per transistore interruttore |
JPS50111978A (ko) * | 1974-02-12 | 1975-09-03 | ||
JPS50143454A (ko) | 1974-04-17 | 1975-11-18 | ||
JPS50143454U (ko) * | 1974-05-11 | 1975-11-27 | ||
US4158810A (en) * | 1974-10-21 | 1979-06-19 | Leskovar Silvin M | Telemetering post for measuring variables in a high-voltage overhead line |
JPS5818679B2 (ja) * | 1975-09-05 | 1983-04-14 | 三菱電機株式会社 | アナログ−デイジタルヘンカンソウチ |
JPS6013329B2 (ja) * | 1976-10-23 | 1985-04-06 | 電気音響株式会社 | 大電力スイッチングトランジスタの駆動装置 |
JPS5679018U (ko) * | 1979-11-24 | 1981-06-26 | ||
JPS6010449B2 (ja) | 1982-07-08 | 1985-03-18 | 三菱電機株式会社 | アナログ−デイジタル変換装置 |
US4629971A (en) * | 1985-04-11 | 1986-12-16 | Mai Basic Four, Inc. | Switch mode converter and improved primary switch drive therefor |
JPH0683041B2 (ja) * | 1985-09-13 | 1994-10-19 | 富士電気化学株式会社 | トランジスタのスピードアップ回路 |
JPS63158911A (ja) | 1986-12-23 | 1988-07-01 | Mitsubishi Electric Corp | トランス駆動装置 |
JP3207229B2 (ja) | 1991-12-20 | 2001-09-10 | 富士写真光機株式会社 | 電子内視鏡装置の信号伝送処理回路 |
JPH09261951A (ja) | 1996-03-22 | 1997-10-03 | Yokogawa Electric Corp | パルストランス |
JP3761795B2 (ja) * | 2000-04-10 | 2006-03-29 | 三菱電機株式会社 | ディジタル回線多重化装置 |
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2007
- 2007-04-10 WO PCT/JP2007/057876 patent/WO2007138791A1/ja active Application Filing
- 2007-04-10 JP JP2008517801A patent/JP4651711B2/ja active Active
- 2007-04-10 CN CN200780019264XA patent/CN101454980B/zh active Active
- 2007-04-10 EP EP07741312A patent/EP2023488B1/en active Active
- 2007-04-10 US US12/298,673 patent/US7973588B2/en active Active
- 2007-04-10 KR KR1020087031602A patent/KR101027835B1/ko active IP Right Grant
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010003379A1 (de) | 2009-04-02 | 2010-11-25 | Samsung Corning Precision Glass Co. Ltd. | Mehrschichtiger Dünnfilm für photovoltaische Zelle |
Also Published As
Publication number | Publication date |
---|---|
JP4651711B2 (ja) | 2011-03-16 |
US7973588B2 (en) | 2011-07-05 |
JPWO2007138791A1 (ja) | 2009-10-01 |
CN101454980A (zh) | 2009-06-10 |
WO2007138791A1 (ja) | 2007-12-06 |
EP2023488A4 (en) | 2010-10-13 |
EP2023488A1 (en) | 2009-02-11 |
CN101454980B (zh) | 2011-09-07 |
KR101027835B1 (ko) | 2011-04-07 |
US20090066401A1 (en) | 2009-03-12 |
EP2023488B1 (en) | 2012-09-12 |
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