KR20090003840A - 코어/쉘 형태의 나노와이어를 제조하는 방법, 그에 의해제조된 나노와이어 및 이를 포함하는 나노와이어 소자 - Google Patents
코어/쉘 형태의 나노와이어를 제조하는 방법, 그에 의해제조된 나노와이어 및 이를 포함하는 나노와이어 소자 Download PDFInfo
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- KR20090003840A KR20090003840A KR1020070067549A KR20070067549A KR20090003840A KR 20090003840 A KR20090003840 A KR 20090003840A KR 1020070067549 A KR1020070067549 A KR 1020070067549A KR 20070067549 A KR20070067549 A KR 20070067549A KR 20090003840 A KR20090003840 A KR 20090003840A
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- Prior art keywords
- nanowire
- shell
- nanowires
- core
- insulating film
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- Optics & Photonics (AREA)
- Luminescent Compositions (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (30)
- (가) 기판 상에 패터닝된 절연막을 형성하는 단계,(나) 상기 패터닝에 의해 절연막이 제거된 기판 위에 다수의 상기 코어(core)부 나노와이어를 수직으로 형성하는 단계 ; 및(다) 상기 코어부 나노와이어 표면 상에서 제 1 쉘(shell)부 나노와이어를 형성하는 단계를 포함하는 것을 특징으로 하는 코어/쉘 형태의 나노와이어 제조방법.
- 제 1항에 있어서, 상기 (다) 단계 후에 상기 기판을 제거하는 단계를 추가로 포함하는 것을 특징으로 하는 코어/쉘 형태의 나노와이어 제조방법.
- 제 1항에 있어서, 상기 (다) 단계는 제 1 쉘부 나노와이어의 하부를 상기 절연막 위에 형성시키는 단계로서, 상기 단계에 의해 상기 코어부 나노와이어의 하부 및 상기 제 1 쉘부 나노와이어의 하부의 접촉이 상기 절연막으로 차단되는 것을 특징으로 하는 코어/쉘 형태의 나노와이어 제조방법.
- 제 1항에 있어서, 상기 기판이 실리콘 기판, 사파이어(sapphire), 유리, 유리 위에 실리콘을 코팅한 기판, 인듐석 산화물, 운모, 흑연, 황화 몰리브덴, 구리, 아연, 알루미늄, 스테인레스, 마그네슘, 철, 니켈, 금, 은 등의 금속, 폴리이미드, 폴리에스테르, 폴리카보네이트, 아크릴 수지로 이루어진 군으로부터 선택되는 것임을 특징으로 하는 코어/쉘 형태의 나노와이어 제조방법.
- 제 1항에 있어서, 상기 패터닝된 절연막을 형성하는 (가) 단계는기판 상에 절연막을 적층하는 단계, 및 상기 절연막에 패턴을 형성하여 상기 절연막의 일부를 제거하는 단계를 포함하는 것을 특징으로 하는 코어/쉘 형태의 나노와이어 제조방법.
- 제 5항에 있어서, 상기 절연막에 패턴을 형성하는 방법은 상기 절연막 상에 포토레지스트를 도포하여 리소그래피로 패턴을 형성하는 단계를 포함하는 것을 특징으로 하는 코어/쉘 형태의 나노와이어 제조방법.
- 제 5항에 있어서, 상기 절연막에 패턴을 형성하는 방법은 상기 절연막 상에 감광성 포토레지스트 조성물을 코팅하는 단계;상기 절연막의 에칭하고자 하는 구간을 선택적으로 노광하는 단계 ; 및상기 노광된 부분을 에칭하여 상기 절연막을 제거하는 단계를 포함하는 것을 특징으로 하는 코어/쉘 형태의 나노와이어 제조방법.
- 제 1항에 있어서, 상기 절연막이 BaO .33SrO .66TiO3 BST, Al2O3, Ta2O5, La2O5, Y2O3, TiO2로 이루어진 군으로부터 선택된 강유전성 절연체, PbZrO .33TiO .66O3(PZT), Bi4Ti3O12, BaMgF4, SrBi2(TaNb)2O9, Ba(ZrTi)O3(BZT), BaTiO3, SrTiO3, Bi4Ti3O12, SiO2, SiNx, AlON로 이루어진 군으로부터 선택된 무기절연체, 또는 폴리이미드(Polyimide), BCB(benzocyclobutane), 파릴렌(Parylene), 폴리아크릴레이트(Polyacrylate), 폴리비닐알콜(Polyvinyalcohol), 폴리비닐페놀(Polyvinylphenol)로 이루어진 군으로부터 선택된 유기절연체로 형성되는 것을 특징으로 하는 코어/쉘 형태의 나노와이어 제조방법.
- 제 1항에 있어서, 상기 절연막이 100nm 내지 50um 두께로 형성되는 것을 특징으로 하는 코어/쉘 형태의 나노와이어 제조방법.
- 제 1항에 있어서, 상기 절연막을 적층하는 단계는 스핀코팅, 딥코팅, 프린팅 방식, 분무 코팅 및 롤 코팅으로 이루어지는 군에서 선택된 방법으로 형성되는 것을 특징으로 하는 코어/쉘 형태의 나노와이어 제조방법.
- 제 1항에 있어서, 상기 나노와이어는 Ⅱ-Ⅵ족, Ⅲ-Ⅴ족, Ⅳ-Ⅵ족 화합물 반도체와 IV족 반도체와 그 혼합물로 이루어진 군으로부터 선택되는 것을 특징으로 하는 코어/쉘 형태의 나노와이어 제조방법.
- 제 1 항에 있어서, 상기 II-VI족 화합물은 CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe 등의 이원소 화합물 또는 CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe 등의 삼원소 화합물 또는 CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe 등의 사원소 화합물로 이루어진 군에서 선택되는 물질이고, 상기 III-V족 화합물 반도체는 GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb 등의 이원소 화합물 또는 GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP 등의 삼원소 화합물 또는 GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb 등의 사원소 화합물로 이루어진 군에서 선택되는 물질이고, 상기 IV-VI족 화합물은 SnS, SnSe, SnTe, PbS, PbSe, PbTe 등의 이원소 화합물 또는 SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe 등의 삼원소 화합물 또는 SnPbSSe, SnPbSeTe, SnPbSTe 등의 사원소 화합물로 이루어진 군에서 선택되는 물질이고, 상기 IV족 화합물은 Si, Ge 등의 단일 원소 화합물 또는 SiC, SiGe 등의 이원소 화합물로 이루어진 군에서 선택되는 물질인 것을 특징으로 하는 코어/쉘 형태의 나노와이어 제조방법.
- 제 1항에 있어서, 상기 코어부 또는 제 1 쉘부 나노와이어를 형성하는 방법이 VLS(vapor phase-liquid phase-solid phase)법, SLS(solid-liquid-solid)법, 유 기금속화학증착법(MOCVD : MetalOrganic Chemical Vapor Deposition), MBE(Molecular Beam Epitaxy)법으로 이루어지는 군에서 선택된 방법인 것을 특징으로 하는 코어/쉘 형태의 나노와이어 제조방법.
- 제 1항에 있어서, 상기 방법은 상기 (가) 단계를 수행하기 전에 상기 기판 상에 금속층을 먼저 적층하고, 및 상기 금속층 상에 패터닝된 절연막을 형성하는 단계인 것을 특징으로 하는 코어/쉘 형태의 나노와이어 제조방법.
- 제 1항에 있어서, 상기 (나) 단계는 (가) 단계의 절연막이 제거된 기판 위에 금속층을 추가로 형성하고, 및 상기 코어(core)부 나노와이어를 상기 기판 위에 형성시키는 단계를 포함하는 것을 특징으로 하는 코어/쉘 형태의 나노와이어 제조방법.
- 제 14항 또는 15항에 있어서, 상기 방법이 상기 금속층이 형성된 기판을 반응로에 넣고 기체 및 나노와이어 전구체를 주입하면서 가열하여 나노와이어를 형성시킴으로서 수행하는 것을 특징으로 하는 코어/쉘 형태의 나노와이어 제조방법.
- 제 14항 또는 15항에 있어서, 상기 금속층이 Au, Ni, Ag, Pd, Pd/Ni, Ti, Co, Cr 및 Fe로 이루어지는 군으로부터 선택되는 것임을 특징으로 하는 코어/쉘 형태의 나노와이어 제조방법.
- 제 1항에 있어서, 상기 (나) 단계는 상기 코어부 나노와이어를 각각 p형 또는 n형으로 도핑시키는 단계 및 상기 (다) 단계는 상기 제 1 쉘부 나노와이어를 n 형 또는 p형으로 도핑시키는 단계를 포함하는 것을 특징으로 하는 코어/쉘 형태의 나노와이어 제조방법.
- 제 1항에 있어서, 상기 나노와이어의 코어부 및 제 1 쉘부의 접촉면이 발광층인 것을 특징으로 하는 코어/쉘 형태의 나노와이어 제조방법.
- 제 1항에 있어서, 상기 (나) 단계 후에 상기 코어부 나노와이어 표면 상에 도핑되지 않은 인트린식 부분으로 된 발광층을 추가로 형성시키고, 및 (다) 단계의 제 1 쉘부 나노와이어를 상기 인트린식 부분의 표면 위에 형성시킨 것을 특징으로 하는 코어/쉘/쉘 형태의 나노와이어 제조방법.
- 제 20항에 있어서, 상기 인트린식 부분이 제 2 쉘부 나노와이어로 형성된 것을 특징으로 하는 코어/쉘/쉘 형태의 나노와이어 제조방법.
- 제 21항에 있어서, 상기 제 2 쉘부 나노와이어가 코어부 및 쉘부 나노와이어와 격자정합이 되는 물질을 성장시켜 형성된 것을 특징으로 하는 코어/쉘/쉘 형태의 나노와이어 제조방법.
- 제1항 또는 제2항의 방법에 의해 제조된 코어/쉘 형태의 나노와이어.
- 기판 ;상기 기판의 일 측면 상에 형성된 절연막 ;패턴 형성에 의해 상기 절연막의 일부가 제거된 기판 위에 수직으로 형성된 다수의 코어(core)부 나노와이어 ;상기 코어부 나노와이어의 표면에서 각각 형성된 제 1쉘(shell)부 나노와이어 ; 및상기 제 1 쉘부 나노와이어 상에 형성된 전극층 ;를 포함하는 것을 특징으로 하는 나노와이어 소자.
- 제 1항 또는 제 2항에 의해 제조된 나노와이어를 포함하는 것을 특징으로 하는 나노와이어 소자.
- 제 25항에 있어서, 상기 소자가 전자 소자, 센서, 광검출소자(photodetector), 발광 다이오드(LED: Light Emitting Diode), 레이저 다이오드(LD: Laser Diode), EL(electroluminescence)소자, PL(photoluminescence)소자, 및 CL(Cathodeluminescence)소자로 이루어진 군에서 선택되는 것을 특징으로 하는 소자
- 제 25항에 있어서, 상기 소자가 컬러 필터를 포함하여 형성된 R, G, B 발광 소자, 또는 백색 발광 소자인 것을 특징으로 하는 소자.
- 제 25항에 있어서, 상기 소자가 상기 제 1 쉘부 나노와이어들 사이에 충진제를 포함하는 것을 특징으로 하는 소자.
- 제 28항에 있어서, 상기 충진제가 유 무기 절연체인 것을 특징으로 하는 코어/쉘 형태의 나노와이어 제조방법.
- 제 25항에 있어서, 상기 소자는 상기 기판 또는 코어부 나노와이어 및 제 1쉘부 나노와이어 상에 각각 형성된 전극층을 포함하는 것을 특징으로 하는 나노와이어 소자.
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