KR20080112778A - 폴리머 기판과 투명전도막 사이에 세라믹 중간층 구조를갖는 투명전극 기판 - Google Patents
폴리머 기판과 투명전도막 사이에 세라믹 중간층 구조를갖는 투명전극 기판 Download PDFInfo
- Publication number
- KR20080112778A KR20080112778A KR1020070061631A KR20070061631A KR20080112778A KR 20080112778 A KR20080112778 A KR 20080112778A KR 1020070061631 A KR1020070061631 A KR 1020070061631A KR 20070061631 A KR20070061631 A KR 20070061631A KR 20080112778 A KR20080112778 A KR 20080112778A
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- Prior art keywords
- transparent conductive
- conductive film
- intermediate layer
- polymer substrate
- ceramic
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- 239000000919 ceramic Substances 0.000 title claims abstract description 20
- 229920000642 polymer Polymers 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 title claims description 19
- 239000011229 interlayer Substances 0.000 title description 5
- 229920000307 polymer substrate Polymers 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 30
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000011787 zinc oxide Substances 0.000 claims abstract description 14
- 229910010293 ceramic material Inorganic materials 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 21
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 8
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 8
- 238000001771 vacuum deposition Methods 0.000 claims description 7
- 239000007772 electrode material Substances 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 claims description 3
- -1 polyethylene terephthalate Polymers 0.000 claims description 3
- 239000010408 film Substances 0.000 description 50
- 239000010410 layer Substances 0.000 description 35
- 239000010409 thin film Substances 0.000 description 14
- 239000007789 gas Substances 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 229910001882 dioxygen Inorganic materials 0.000 description 5
- 230000035515 penetration Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000014759 maintenance of location Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000004695 Polyether sulfone Substances 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000000053 physical method Methods 0.000 description 2
- 229920006393 polyether sulfone Polymers 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Laminated Bodies (AREA)
- Non-Insulated Conductors (AREA)
Abstract
Description
Claims (4)
- 산화아연을 주성분으로 하는 투명전극재료를 건식법(진공증착법 또는 스퍼터링법)으로 형성시키는 구조에 있어서,모재(10)를 폴리머로 사용하고, 상기 모재(10)와 산화아연 물질의 투명전도막(30) 사이에 세라믹재료로 중간층(20)을 형성시키는 폴리머 기판과 투명전도막 사이에 세라믹 중간층 구조를 갖는 투명전극 기판.
- 제 1항에 있어서,상기 모재(10)는 100 ~ 300um 두께범위의 폴리에테르술폰(Poly Ether Sulfone; PES) 또는 폴리에틸렌테레프탈레이트(Poly Ethylene Terephthalte; PET) 물질로 구성되는 것을 특징으로 하는 폴리머 기판과 투명전도막 사이에 세라믹 중간층 구조를 갖는 투명전극 기판.
- 제 1항에 있어서,상기 중간층(20)의 세라믹재료는 이산화규소(SiO2) 또는 산화알루미늄(Al2O3) 물질로 구성되는 것을 특징으로 하는 폴리머 기판과 투명전도막 사이에 세라믹 중간층 구조를 갖는 투명전극 기판.
- 제 1항에 있어서,상기 중간층(20)의 세라믹재료 두께는 0.05 ~ 1.0um(= 50 ~ 1000nm)의 범위로 형성되는 것을 특징으로 하는 폴리머 기판과 투명전도막 사이에 세라믹 중간층 구조를 갖는 투명전극 기판.
Priority Applications (1)
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KR1020070061631A KR100913553B1 (ko) | 2007-06-22 | 2007-06-22 | 폴리머 기판과 투명전도막 사이에 세라믹 중간층 구조를갖는 투명전극 기판 |
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KR1020070061631A KR100913553B1 (ko) | 2007-06-22 | 2007-06-22 | 폴리머 기판과 투명전도막 사이에 세라믹 중간층 구조를갖는 투명전극 기판 |
Publications (2)
Publication Number | Publication Date |
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KR20080112778A true KR20080112778A (ko) | 2008-12-26 |
KR100913553B1 KR100913553B1 (ko) | 2009-08-21 |
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KR1020070061631A KR100913553B1 (ko) | 2007-06-22 | 2007-06-22 | 폴리머 기판과 투명전도막 사이에 세라믹 중간층 구조를갖는 투명전극 기판 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101005973B1 (ko) * | 2007-08-21 | 2011-01-05 | 주식회사 엘지화학 | 도전 적층체 및 이의 제조방법 |
KR101160845B1 (ko) * | 2011-08-23 | 2012-06-29 | 주식회사 나우테크 | 금속산화물계 투명전극의 제조방법 |
US8303856B2 (en) | 2007-02-26 | 2012-11-06 | Lg Chem, Ltd. | Conductive laminated body and method for preparing the same |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101275828B1 (ko) * | 2011-08-08 | 2013-06-24 | 포항공과대학교 산학협력단 | 유기 발광 다이오드용 기판, 이의 제조방법 및 이를 구비한 유기 발광 다이오드 |
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JPH08325711A (ja) * | 1995-05-26 | 1996-12-10 | Toppan Printing Co Ltd | 透明導電性金属酸化物被覆フィルムおよびその製造方法 |
US6445029B1 (en) * | 2000-10-24 | 2002-09-03 | International Business Machines Corporation | NVRAM array device with enhanced write and erase |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8303856B2 (en) | 2007-02-26 | 2012-11-06 | Lg Chem, Ltd. | Conductive laminated body and method for preparing the same |
KR101005973B1 (ko) * | 2007-08-21 | 2011-01-05 | 주식회사 엘지화학 | 도전 적층체 및 이의 제조방법 |
KR101160845B1 (ko) * | 2011-08-23 | 2012-06-29 | 주식회사 나우테크 | 금속산화물계 투명전극의 제조방법 |
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KR100913553B1 (ko) | 2009-08-21 |
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