KR20080105604A - Advanced probe pin for semiconductor test - Google Patents

Abstract

A probe for a semiconductor device test is provided to stably contact at the beam part by rapidly replacing the needles at the beam part. A probe for a semiconductor device test comprises the beam portion(4), and the needles(8). The fixed supporting part(1) is added to the outer side of the probe pin(50). The needles contact with the wafer chip. The beam portion and the needles are joined by separately molding. The inserting recess(2) uniting the needles is added to the center of the inner side of the beam part. The upper support plate(6a) and the bottom support plate(6b) are arranged apart from each other with a constant interval at the needles.

Description

Contact probe for semiconductor device inspection {Advanced probe pin for semiconductor test}

1 is an exploded perspective view illustrating the configuration of the present invention

Figure 2 is an exploded perspective view illustrating another embodiment of the present invention

Figure 3 (a) ~ (c) is an exploded perspective view illustrating another embodiment of the present invention

4 (a) to (d) is a perspective view illustrating a configuration state of the probe pin integrally formed with the beam portion and the needle portion

5 is a perspective view illustrating a configuration state of a probe pin to which a spring-shaped shock absorbing part is added;

Figure 6 (a) ~ (c) is a perspective view of a probe pin molded integrally with the conventional needle portion and the beam portion

<Explanation of symbols for the main parts of the drawings>

1,11,21,31,41: fixed support part 4,14,24,34,44: beam part

8,18,28,38,48: needle 50: probe pin

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device inspection contact, and more particularly, to a semiconductor device inspection contact that can be electrically contacted with a semiconductor device to inspect whether the semiconductor device is normally present.

Generally, a semiconductor chip is implemented on a silicon substrate by performing a series of semiconductor manufacturing processes such as a lithography process, an oxidation process, a diffusion process, an ion implantation process, an etching process, and a metal deposition process, and the semiconductor chip implemented on the silicon substrate is an EDS. Electrical chips are sorted into normal chips and bad chips through electrical die sorting, and only the normal chips are packaged.

In addition, KGD (Known Good Die) supplied to semiconductor chips is inspected in the range of high temperature and low temperature during the EDS test to select normal chips and bad chips, and only normal chips are sold.

At this time, the EDS detects normal and abnormality by detecting a response electric signal corresponding to an applied electric signal by contacting a probe pin of a probe card with a pad of a semiconductor chip and applying an electric signal. will be.

As the recent semiconductor chips are highly integrated, the pads of the semiconductor chips must be able to cope with the fine pitch spacing, so that the electrical contact of the probe card can be used in the high frequency band, so the signal-to-response speed must be fast and repetitive. It is necessary to maintain a predetermined hardness that prevents needle wear even by phosphorus contact, to maintain a predetermined contact resistance, to be excellent in electrical conductivity, and to sufficiently secure the settling pressure due to overdrive.

Particularly, the needle of the probe card should be restrained from adhering particles to the needle in the process of repeatedly contacting the pad of the semiconductor device chip, and tens of thousands of tip portions can be accurately contacted at the center of the semiconductor chip pad. Should be.

In general, in case of 300mm wafer, about 500 chips are formed in NAND refresh memory, and there are about 30 pads for device inspection of individual chips.

At this time, the number of probe pins of the entire electrical contact body of the probe head of the probe card is assembled with approximately 15000 probe pins. The probe pins assembled in the entire probe head have a significant decrease in the yield in semiconductor chip inspection even with one defective probe pin.

The replacement of these defective probe pins should be easy and immediate, so that expensive inspection equipment can be used without interruption, thus reducing production losses.

As shown in FIG. 6 (a), the probe pin 100 has a structure in which the needle portion 85 is bonded to the lower surface of the beam portion 80, so that the individual probe pins have excessive overdrive or chip pressure. Silver needles 85 fall from the beam portion 80 or a problem occurs.

As another example, as shown in FIGS. 6 (b) and 6 (c), the integrated probe pin 100 has a beam portion 90 having a plate shape, and when the overdrive is applied to the needle portion 95, excessive stress and Excessive stress is generated in the beam unit 90 at the strain rate.

In addition, due to the difference in the flatness of the probe pins of the inspection equipment or the probe card, the probe pins having high flatness at some reference points are given high settling pressure due to excessive overdrive, and some probe pins generate excessive stress in the beam part.

In addition, if a particle larger than the height of the needle portion 95 is under the beam portion 90 in the semiconductor chip to be inspected, the probe pin 100 may be damaged or the inspection may be problematic due to a poor contact.

The needle portion 95 and the beam portion 90 of the probe pin 100 of the probe head electrical contact of the probe card reduce the size of the beam portion below a certain threshold by concentrating stress on a predetermined portion when contacting the pad of the semiconductor chip. If the overdrive as required for the needle portion 95 of the probe pin 100 will be out of the elastic limit of the metal of the beam portion will cause the beam portion does not have elasticity and cause plastic deformation.

Therefore, if the beam part of the probe pin is shortened, plastic deformation can be avoided, but the pressing force is weakened to obtain the required pin force, and the needle and the beam of the probe pin whose needle is deformed at the time of extinction of external force after contact with the semiconductor chip pad. The part must return to its original position but not return.

In addition, when the needle portion of the probe pin contacts the pad of the semiconductor chip due to excessive overdrive, stress is concentrated on the needle portion and the predetermined portion of the beam portion, thereby causing the needle portion or the beam portion to be damaged.

The probe pin of the electrical contact body must have a structure that can penetrate the oxide film formed on the pad surface of the wafer chip while the needle and the beam part secure a predetermined overdrive.

That is, the pads of many semiconductor chips formed on one wafer may not have a constant height, so that the entire needles attached to the electrical contacts may be pads having a high pad height of the wafer chip or the pads formed on the wafer chip. The oxide film and the aluminum film formed in the hole can be drilled deeply to damage the chip. On the contrary, the pad having the low pad of the wafer chip cannot penetrate the oxide film and thus cannot inspect the accurate semiconductor chip.

In order for the needle to have a physical force that can penetrate the oxide film on the pad surface of the wafer chip and make contact with each other, the deformation strength of the fixed support beam supporting the needle and the beam part must be high, and for this purpose, the length of the fixed support beam must be shortened. If the length of the support beam is shortened, the vertical elastic deformation amount becomes smaller, which makes it difficult to secure the sedimentation pressure according to a predetermined overdrive, as well as plastic deformation beyond the elastic limit, thereby preventing it from serving as an electrical contact probe pin. There is a problem. In addition, there is a problem that the needle portion and the beam portion may be damaged by applying excessive stress to the fixed support beam when contacting the pad of the wafer chip.

The present invention has been proposed to solve the above problems, the main object of the present invention to solve the problem that the needle portion of the probe pin falls from the bottom of the beam portion is a needle by precision bonding to one end of the beam portion opposite the fixed support portion It is to provide a semiconductor device inspection contact having a structure to be bonded.

Another object of the present invention is an elasticity that can disperse excessive elasticity in the beam portion to solve the problem that it is difficult to secure the settling pressure according to a predetermined overdrive and excessive stress is applied to the predetermined portion of the beam portion is bent or broken A spring for controlling and correcting the absorption hole and elasticity is added to one end of the beam part, and the elasticity generated from the needle part can be controlled and corrected for the elasticity in the spring added to the beam part. The predetermined part of the part is to provide a semiconductor device inspection contact that can be controlled in the spring portion to secure the settling pressure according to the overdrive required during the inspection in the short length beam portion to the spring portion.

The overall configuration of the present invention for achieving the above object is a probe card which is a semiconductor inspection device, in which the beam portion is added to the outer side of the probe pin and the needle portion which is in surface contact with the wafer chip to form integrally bonded together It is made up of a structure.

In particular, the beam portion is a configuration in which the insertion groove for coupling the needle to the center of the inner surface is added.

On the other hand, the needle portion is arranged to maintain the predetermined interval between the upper support plate and the lower support plate around the support piece, the bottom portion is made of a configuration including a head portion having a pentagonal shape.

In addition, the probe pin has a configuration in which an insertion hole is added in a vertical line to the beam part to integrally couple the needle part to which the protrusion piece is added at the center of the upper surface.

In addition, a coupling protrusion is added to an inner surface of the beam part constituting the probe pin, fixing protrusions are added to both sides of the coupling protrusion, and a needle having a five-tip tip is integrally coupled to the bottom surface.

In addition, the bottom of the beam portion is made of a configuration in which a coupling protrusion for coupling the needle.

In addition, the mating grooves are coupled to both sides of the beam portion coupled to the needle and the elastic absorption hole is disposed in a vertical line.

In the probe card which is a semiconductor inspection device, the beam portion to which the fixed support portion is attached to the outside and the needle portion to be in surface contact with the wafer chip are integrally formed so that the elastic absorption holes are disposed in a vertical line on the beam portion.

The elastic absorption hole is excreted in any one of the upper surface or the side of the beam portion.

In addition, the elastic absorption hole is made of a configuration that is selectively added to the front or side of the fixed support.

On the other hand, in the probe card which is a semiconductor inspection device, the probe pin of which the needle, the beam part and the fixed support part are integrated, or the needle and the beam part are detachable, the spring part for correcting excessive settling pressure by the flat difference is added to one end of the beam part.

Hereinafter, the overall configuration of the present invention and the specific effects obtained therefrom will be described in detail with reference to the accompanying drawings.

The present invention is largely composed of three types, which will be described in detail by dividing each type into examples.

(Example 1)

FIG. 1 is a perspective view of a needle part and a beam part, which are one component of the present invention, with reference to the drawings.

The probe pin 50 of the present invention comprises a beam part 4 which is manufactured integrally with the fixed support part 1 by the LIGA process and the CMP process, and the needle part 8 which is manufactured by the MEMS process and the CMP process.

The outer side of the beam portion 4 is a fixed support portion (1) protruding upwards is added, the inner side is made of a structure in which the insertion groove (2) for coupling the needle portion 8 to be described later is formed.

Meanwhile, the needle 8, which is integrally coupled to the insertion recess 2 formed in the beam part 4 and in contact with the wafer chip, has a structure in which the beam part 4 is easily joined and replaced.

That is, the upper support plate 6a and the lower support plate 6b are disposed to maintain a predetermined interval by the support piece 6, and the lower end of the lower support plate 7 protrudes outward to protrude to the outside, and the tip portion 7a is pentagonal. The head part 7 is added.

The main purpose of forming the tip portion 7a into a pentagonal shape is to have a triangular structure at the vertex so that the tip portion 7a contacts the wafer chip and pushes forward while receiving less resistance.

The vertices of the triangular structure are smoothly rubbed when moving forward by contacting with a small surface, so that the length of the jungle is shortened.

When the needle 8 is in contact with the wafer chip and is subjected to a small resistance during the rolling, the stress applied to the needle 8 and the beam unit 4 can be significantly reduced, so that only a small amount of particles is used for the needle 8 붇

Accordingly, the probe pin 50 has a small change in contact resistance due to particles and less fatigue, thereby extending the life of the probe pin.

In the probe pin 50 having such a structure, when the support piece 6 constituting the needle portion 8 is inserted into the insertion recess 2 formed in the beam portion 4, the upper support plate 6a and the lower support plate 6b are formed. The upper and lower parts of the beam part 4 are firmly coupled to each other.

Another variation of the probe pin 50 will be described with reference to FIG. 2.

As described above, the probe pin 50 also includes a beam part 14 including the fixed support part 11 and a needle part 18 coupled to the beam part 14.

The outer side of the beam portion 14 is fixed fixing portion 11 protruding upwards, the inner side is made of a structure in which the insertion hole 12 is formed in a vertical line.

Meanwhile, the needle part 18 integrally coupled to the insertion hole 12 formed in the beam part 14 and in contact with the wafer chip has a structure that is easy to join and replace with the insertion hole 12 formed in the beam part 14. Its configuration is as follows.

In the upper surface, the head portion 16 including the protrusion 15 for coupling to the insertion hole 12 formed in the beam portion 14 is integrally formed.

The protruding piece 15 is coupled to the insertion hole 12, the head portion 16 is made of a structure having a five-tip end portion 16a.

The present probe pin 50 having such a configuration is to insert and fix the protruding piece 15 constituting the needle portion 18 in the insertion hole 12 formed in a vertical line on the beam portion (14).

Another structure of the probe pin 50 of the present invention will be described in detail with reference to FIGS. 3A to 3C.

The probe pin 50 shown in FIG. 3 (a) includes a beam part 24 and a needle part 28 coupled to the beam part 24.

The beam portion 24 has a structure in which the fixed support portion 21 and the coupling protrusion 22 are added to the outside, and the needle portion 28 coupled to the beam portion 24 has been described above inside the fixing protrusion 25. An insertion groove 25a coupled to the coupling protrusion 22 is added, and a lower portion of the head portion 26 including a pentagonal tip portion 26a is integrally formed.

Meanwhile, the probe pin 50 shown in FIG. 3 (b) has a structure in which the needle part 28 is coupled to the bottom surface of the beam part 24 by adding a coupling protrusion 22a protruding to the outside.

In addition, the probe pin 50 shown in FIG. 3 (c) adds matching grooves 22b to both side surfaces of the beam portion 24 in which a plurality of elastic absorbing holes 23 are formed in a vertical line, and the matching grooves 22b are formed. It is made of a structure that is inserted into the fixing projections 25 constituting the above-described needle portion 28 to combine.

The beam part 24 and the needle part 28 having the above-described structure are separated and molded to be bonded to each other by a micro-microadhesion method so that the joining and separating thereof can be performed quickly and easily.

(Example 2)

Another embodiment of the probe pin 50 of the present invention is shown in Figures 4 (a) to (d), which is formed by forming the probe pin 50 into the beam portion 34 and the needle 38 as a single body needle ( An appropriate number of elastic absorbing holes 33 are applied to the beam part 34 or the fixed support part 31 for the purpose of absorbing the stress transmitted by repeatedly contacting the water to be welded 38 to reduce the fatigue degree of the beam part 34. It is an added structure.

That is, as shown in FIG. 4A, a plurality of elastic absorption holes 33 are formed in a vertical line at the center of the beam part 34.

4 (b) is a structure in which an elastic absorbing hole 33 a is formed on the side of the beam part 34, and FIG. 4 (c) forms an elastic absorbing hole 33 in a vertical line at the center of the beam part 34. At the same time, the elastic absorption hole (33b) is formed on the side of the fixed support (31).

As shown in Fig. 4 (d), a structure in which elastic absorption holes 33a and 33c are formed on the side surface of the beam portion 34 and the inner side surface of the fixed support portion 31, respectively, is adopted.

The elastic absorption holes (33, 33a, 33b, 33c) is selected the number and location of excreted according to the length of the beam portion 34 and the overdrive given, the shape thereof may be a rectangular, polygonal or circular shape. The effect is the same.

Probe pins made of an integral type in which elastic absorbing holes 33, 33a, 33b, and 33c are added to the probe pins 50 having the shapes shown in FIGS. 4 (a), (b), (c) and (d). And, the beam portion 34 and the needle 38 is applicable to both of the detachable probe pin.

4 (a), (b), (c), (d) of the integrated probe pin 50 of the shape is manufactured by the LIGA process and the CMP process, the 4 (a), (b), (c) and (d) the probe pin having the beam portion 34 and needle portion 38 and the fixed support portion 31 having a separate shape, the needle portion 38 is the beam portion 34 and the fixed support portion by the MEMS process and the CMP process ( 31) is manufactured by LIGA process and CMP process.

The following table shows the elastic absorbing holes 33b and 33c in the beam part 34 and the fixed support part 31 in which the elastic absorbing holes 33 and the elastic absorbing holes 33a are attached to the side in a vertical line. The difference in stress stress and strain applied to the added beam 34 is shown.

Nickel alloy was used as the metal material and the sedimentation pressure was 3g.

 Beam part without elastic absorbing hole  Beam part with elastic absorption hole on the side  Beam part with elastic absorption hole added on vertical line  Stress  595.7 MPa  612.1 MPa  906.6 MPa  Strain  0.072  0.084  0.096

As shown in the table above, the stress and strain show that the elastic absorbing holes added to the side are better than those without the elastic absorbing holes in the beam portion, and the elastic absorbing holes added on the vertical line are superior to the elastic absorbing holes added to the side.

(Example 3)

Another modification of the probe pin 50 of the present invention will be described with reference to FIG. 5. That is, pads having different flatness of probe pins, flatness difference of the surface of the multilayered circuit board (MLC), and the height of the wafer chip to be inspected are added to the predetermined portion of the beam portion 44 by adding the spring portion 43 that is continuous up and down. There is a function to compensate for excessive overdrive or settling pressure due to the average correction by adding the spring portion (43).

This can be manufactured with a probe pin in which the beam part 44 and the needle part 48 to which the spring part 43 is added, and the probe pin in which the beam part 44 and the needle part 48 are separated.

As such, the probe pins integrated and separated are manufactured by a MEMS process or a LIGA process and a CMP process.

The probe pins of Examples 1, 2, and 3 are selected from the most ideal metal materials required for wafer inspection, and the needles are selected from rhodium (Rh) or palladium (Pd) where the inner layer is nickel alloy and the outer layer is small in particle size. The beam part and the fixed support part are made of a metal having excellent hardness, elasticity, heat resistance, electrical conductivity, and the like, to be manufactured in a desired structure.

All of the beam part and the fixed support part are made of nickel (Ni) based on cobalt (Co), manganese (Mn), molybdenum (Mo), copper (Cu), gold (Au), tungsten (W) and iron (Fe). ), A plurality of titanium (Ti) or chromium (Cr) is preferably selected and plated with a metal alloy solution, or a desired probe pin is produced by metal powder molding.

The outer layer metals of the needle part and the beam part of the separate probe pin are made of different metals.

As described above, the present invention is capable of quickly and easily replacing the needle part in the beam part by diversifying the beam part and achieving stable bonding in the beam part.

In addition, it is a useful invention that can reduce the excessive stress by reducing the stress and strain corresponding to the beam portion by adding various structures and various fine holes.

Various modifications are possible by those skilled in the art within the technical spirit and scope of the present invention, not limited to the above-described embodiment.

Claims (11)

A probe card, which is a semiconductor inspection device, comprising: a beam part to which a fixed support part is attached to an outer side of a probe pin, and a needle part which is in surface contact with a wafer chip, which is separately molded and integrally bonded to each other. . The semiconductor device inspection contact as claimed in claim 1, wherein the beam part has an insertion recess coupled to the needle at the center of the inner surface. The semiconductor device inspection according to claim 1, wherein the needle portion is disposed so that the upper support plate and the lower support plate are maintained at a predetermined interval around the support piece, and the bottom portion includes a head portion having a five-sided end portion. Contact. According to claim 1, The probe pin is a semiconductor device inspection contact, characterized in that the insertion hole is added in a vertical line in the beam portion, the needle portion is integrally coupled to the center of the upper surface integrally combined. According to claim 1, wherein the coupling protrusions are added to the inner surface of the beam portion constituting the probe pin, the fixing protrusions are added to both sides of the coupling projections and the bottom surface has a configuration in which the needles having a five-sided tip portion integrally combined A contact for semiconductor device inspection, characterized in that made. 6. The semiconductor device inspection contact as claimed in claim 5, wherein the bottom surface of the beam portion is provided with a coupling protrusion for coupling the needle portion. 6. The semiconductor device inspection contact according to claim 5, wherein a mating groove for joining the needles is added to both side surfaces of the beam portion, and an elastic absorption hole is disposed in a vertical line. A probe card, which is a semiconductor inspection device, characterized in that the beam portion to which the fixed support portion is attached to the outside of the probe pin and the needle portion to be in surface contact with the wafer chip are integrally formed so that the elastic absorption holes are disposed in a vertical line on the beam portion. Contact for semiconductor device inspection. The contact element for inspecting a semiconductor device according to claim 8, wherein the elastic absorbing hole is disposed on any one of an upper surface or a side surface of the beam part formed in a quadrangular, circular or polygonal shape. 9. The semiconductor device inspection contact as claimed in claim 8, wherein the elastic absorption hole is selectively added to the front side or the side of the fixed support. In the probe card, which is a semiconductor inspection apparatus, the probe pin may include a needle, a beam part, and a fixed support part, or a probe pin having a needle part and a beam part separated type. A semiconductor device inspection contact, characterized in that.

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